Relevant bibliographies by topics / Metal-dopant

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Book chapters
  4. Conference papers

Academic literature on the topic 'Metal-dopant'

Author: Grafiati
Published: 30 May 2022
Last updated: 31 July 2025

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the lists of relevant articles, books, theses, conference reports, and other scholarly sources on the topic 'Metal-dopant.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Journal articles on the topic "Metal-dopant"

1

Wang, Ting, Yan Dong Mao, Fang Peng Tang, Jun Xing, and Li Guang Wu. "Crystallization and Photocatalytic-Activity of TiO2 Doped with Metal Ions Prepared by Adsorption Phase Synthesis." Advanced Materials Research 624 (December 2012): 194–99. http://dx.doi.org/10.4028/www.scientific.net/amr.624.194.

Full text
Abstract:
TiO2 photocatalysts doped with different metal ions were prepared by adsorption phase synthesis. The influence of different dopant metal ions with various concentrations on the crystallization of TiO2 was ex-plored by XRD. Then photodegradation experiments of methyl-orange were employed to evaluate the activity of these photocatalysts. The results indicated that the crystallization of TiO2 was restricted after doping, due to replacement of Ti4+ in TiO2 lattice structure by other metal ions. And the restriction became stronger with radius and concentration of doping ions increasing. There was a
APA, Harvard, Vancouver, ISO, and other styles
2

Rojanasuwan, Sunit, Pakorn Prajuabwan, Annop Chanhom, Anuchit Jaruvanawat, Adirek Rangkasikorn, and Jiti Nukeaw. "The Effect of the Central Metal Atom on the Structural Phase Transition of Indium Doped Metal Phthalocyanine." Advanced Materials Research 717 (July 2013): 146–52. http://dx.doi.org/10.4028/www.scientific.net/amr.717.146.

Full text
Abstract:
We investigate the effect of central metal atom on the phthalocyanine (Pc) molecular crystals as intercalated with indium. As dopant, indium has physical interaction with some atom in the ring of Pc molecule and there is charge transfer between indium atom and Pc ring atom. Since In-doped Pc is a hole doping which increase positive charge carriers and the HOMO of ZnPc, CuPc, NiPc and MgPc are localized on the phthalocyanine ring, then, the central metal atom e.g. Zn, Cu, Ni and Mg are not directly involved with the charge transfer between indium dopant and their Pc molecule. The structural pha
APA, Harvard, Vancouver, ISO, and other styles
3

Park, Jin-Hong, Woo-Shik Jung, and Hyun-Yong Yu. "Dopant-dependence of one-step metal-induced dopant activation process in silicon." Current Applied Physics 12, no. 3 (2012): 995–97. http://dx.doi.org/10.1016/j.cap.2012.01.002.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Drabczyk, Kazimierz, Edyta Wróbel, Grazyna Kulesza-Matlak, Wojciech Filipowski, Krzysztof Waczynski, and Marek Lipinski. "Comparison of diffused layer prepared using liquid dopant solutions and pastes for solar cell with screen printed electrodes." Microelectronics International 33, no. 3 (2016): 167–71. http://dx.doi.org/10.1108/mi-03-2016-0031.

Full text
Abstract:
Purpose The purpose of this study is comparison of the diffusion processes performed using the commercial available dopant paste made by Filmtronics and the original prepared liquid dopant solution. To decrease prices of industrially produced silicon-based solar cells, the new low-cost production processes are necessary. The main components of most popular silicon solar cells are with diffused emitter layer, passivation, anti-reflective layers and metal electrodes. This type of cells is prepared usually using phosphorus oxychloride diffusion source and metal pastes for screen printing. The dif
APA, Harvard, Vancouver, ISO, and other styles
5

Saga, Koichiro. "Diffusion Behavior of Transition Metals Penetrating Silicon Substrate through Silicon Dioxides by Dopant Ion Implantation." Solid State Phenomena 195 (December 2012): 261–64. http://dx.doi.org/10.4028/www.scientific.net/ssp.195.261.

Full text
Abstract:
Metallic contamination on silicon surfaces has a detrimental impact on ULSI device performance and yield. Surface metal impurities degrade gate oxide integrity while metal impurities dissolved in silicon cause recombination centers and result in junction leakage. Surface metal impurities penetrate silicon by the colliding with dopant during ion implantation and are also diffused in silicon by subsequent annealing [. The diffusion behavior of metal impurities in silicon is well-known [. While metal impurities often penetrate silicon through the silicon oxide in ULSI processing, little work has
APA, Harvard, Vancouver, ISO, and other styles
6

Han, Juan, Xu Wu, Julia Xiaojun Zhao, and David T. Pierce. "An Unprecedented Metal Distribution in Silica Nanoparticles Determined by Single-Particle Inductively Coupled Plasma Mass Spectrometry." Nanomaterials 14, no. 7 (2024): 637. http://dx.doi.org/10.3390/nano14070637.

Full text
Abstract:
Metal-containing nanoparticles are now common in applications ranging from catalysts to biomarkers. However, little research has focused on per-particle metal content in multicomponent nanoparticles. In this work, we used single-particle inductively coupled plasma mass spectrometry (ICP-MS) to determine the per-particle metal content of silica nanoparticles doped with tris(2,2′-bipyridyl)ruthenium(II). Monodispersed silica nanoparticles with varied Ru doping levels were prepared using a water-in-oil microemulsion method. These nanoparticles were characterized using common bulk-sample methods s
APA, Harvard, Vancouver, ISO, and other styles
7

Saga, Koichiro, Shunsuke Kobayashi, and Koji Sueoka. "Quantitative Analysis of Transition Metals Penetrating Silicon Substrate through SiN Film by Dopant Ion Implantation and Annealing." Solid State Phenomena 219 (September 2014): 265–67. http://dx.doi.org/10.4028/www.scientific.net/ssp.219.265.

Full text
Abstract:
Metallic contamination on silicon surfaces has a detrimental impact on the performance and yield of ULSI devices. Surface metal impurities degrade the gate oxide integrity while metal impurities dissolved in silicon cause recombination centers and this results in junction leakage. The diffusion behavior of these metal impurities in silicon is well-known [1]. On the other hand, these metal impurities often penetrate the silicon through the silicon oxide or silicon nitride films in ULSI processing. The surface metal impurities penetrate the silicon by colliding with the dopant during ion implant
APA, Harvard, Vancouver, ISO, and other styles
8

Canales, Mónica, Juan Manuel Ramírez-de-Arellano, Juan Salvador Arellano, and Luis Fernando Magaña. "Ab Initio Study of the Interaction of a Graphene Surface Decorated with a Metal-Doped C30 with Carbon Monoxide, Carbon Dioxide, Methane, and Ozone." International Journal of Molecular Sciences 23, no. 9 (2022): 4933. http://dx.doi.org/10.3390/ijms23094933.

Full text
Abstract:
Using DFT simulations, we studied the interaction of a semifullerene C30 and a defected graphene layer. We obtained the C30 chemisorbs on the surface. We also found the adsorbed C30 chemisorbs, Li, Ti, or Pt, on its concave part. Thus, the resulting system (C30-graphene) is a graphene layer decorated with a metal-doped C30. The adsorption of the molecules depends on the shape of the base of the semifullerene and the dopant metal. The CO molecule adsorbed without dissociation in all cases. When the bottom is a pentagon, the adsorption occurs only with Ti as the dopant. It also adsorbs for a hex
APA, Harvard, Vancouver, ISO, and other styles
9

Probst, V., H. Schaber, A. Mitwalsky, et al. "Metal‐dopant‐compound formation in TiSi2and TaSi2: Impact on dopant diffusion and contact resistance." Journal of Applied Physics 70, no. 2 (1991): 693–707. http://dx.doi.org/10.1063/1.349625.

Full text
APA, Harvard, Vancouver, ISO, and other styles
10

Gribelyuk, Michael A., Sanjay Mehta, Jeffrey B. Johnson, and Lee Kimball. "Two-dimensional dopant potential mapping in a fin field effect transistor by off-axis electron holography." Journal of Applied Physics 132, no. 4 (2022): 045702. http://dx.doi.org/10.1063/5.0091586.

Full text
Abstract:
Progress in the development of nanometer scaled Fin Field Effect Transistor (FinFET) devices is affected by a lack of understanding of relevant dopant diffusion phenomena due to limited experimental data. In particular, 2D dopant potential mapping by electron holography in 3D FinFET devices has been challenged by the overlap of electrically active fins, metal films, and dielectric films in the electron beam direction. This paper presents methodology on how to map dopant potential in modern FinFET devices. A custom-device structure was developed, which preserved all essential features of the de
APA, Harvard, Vancouver, ISO, and other styles
More sources

Dissertations / Theses on the topic "Metal-dopant"

1

Quevedo-Lopez, Manuel Angel. "Materials properties of hafnium and zirconium silicates: Metal interdiffusion and dopant penetration studies." Thesis, University of North Texas, 2002. https://digital.library.unt.edu/ark:/67531/metadc3221/.

Full text
Abstract:
Hafnium and Zirconium based gate dielectrics are considered potential candidates to replace SiO2 or SiON as the gate dielectric in CMOS processing. Furthermore, the addition of nitrogen into this pseudo-binary alloy has been shown to improve their thermal stability, electrical properties, and reduce dopant penetration. Because CMOS processing requires high temperature anneals (up to 1050 °C), it is important to understand the diffusion properties of any metal associated with the gate dielectric in silicon at these temperatures. In addition, dopant penetration from the doped polysilicon gate in
APA, Harvard, Vancouver, ISO, and other styles
2

Sharma, Pratigya. "Dopant interaction in binary metal oxide system: Towards the development of an improved supercapacitor material." Thesis, Sharma, Pratigya (2022) Dopant interaction in binary metal oxide system: Towards the development of an improved supercapacitor material. PhD thesis, Murdoch University, 2022. https://researchrepository.murdoch.edu.au/id/eprint/65293/.

Full text
Abstract:
Technological advancement has raised the expectation on the role of energy storage systems. With the transition towards renewable technologies like solar and wind, demand for efficient energy storage systems capable of harvesting energy from various sources and delivering stable electricity output to meet customers' demand is in priority. Supercapacitors (SCs) are complementary to battery technology. However, SCs can provide high power density, longer life cycle, and superior round-trip efficiency compared to battery systems. Hence, it holds an important space in energy storage technology. Thi
APA, Harvard, Vancouver, ISO, and other styles
3

Ravichandran, Karthik. "Nano-scale process and device simulation." Connect to resource, 2005. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=osu1125340288.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Deus, Dominike Pacine de Andrade. "Estudo teórico das propriedades estruturais, eletrônicas e magnéticas de superfícies semicondutoras dopadas: (i) metais de transição sobre o InAs(110) e (001) e (ii) boro sobre o Si(111)." Universidade Federal de Uberlândia, 2017. https://repositorio.ufu.br/handle/123456789/18399.

Full text
Abstract:
CAPES - Coordenação de Aperfeiçoamento de Pessoal de Nível Superior<br>CENAPAD - Centro Nacional de Processamento de Alto Desempenho em São Paulo<br>FAPEMIG - Fundação de Amparo a Pesquisa do Estado de Minas Gerais<br>Utilizando cálculos de primeiro princípios, nós encontramos propriedades estruturais, eletrônicas e magnéticas dos metais de transição (MTs) Co, Fe e Mn depositados em InAs(110) e InAs(001), uma superfície semicondutora III-V. Em relação às propriedades estruturais, obtidas através de relaxação iônica e imagens STM (do inglês, scanning tunneling microscopy) teóricas, nós verifica
APA, Harvard, Vancouver, ISO, and other styles
5

Kortan, Victoria Ramaker. "Transition-metal dopants in tetrahedrally bonded semiconductors: symmetry and exchange interactions from tight-binding models." Diss., University of Iowa, 2015. https://ir.uiowa.edu/etd/1865.

Full text
Abstract:
It has become increasingly apparent that the future of electronic devices can and will rely on the functionality provided by single or few dopant atoms. The most scalable physical system for quantum technologies, i.e. sensing, communication and computation, are spins in crystal lattices. Diamond is an excellent host crystal offering long room temperature spin coherence times and there has been exceptional experimental work done with the nitrogen vacancy center in diamond demonstrating many forms of spin control. Transition metal dopants have additional advantages, large spin-orbit interaction
APA, Harvard, Vancouver, ISO, and other styles
6

Каракуркчі, Ганна Володимирівна. "Науково-технологічні засади плазмо-електролітного формування гетерооксидних покриттів для екотехнологій". Thesis, Національний технічний університет "Харківський політехнічний інститут", 2020. http://repository.kpi.kharkov.ua/handle/KhPI-Press/48805.

Full text
Abstract:
Дисертація на здобуття наукового ступеня доктора технічних наук за спеціальністю 05.17.03 – технічна електрохімія (161 – хімічні технології та інженерія). ‒ Національний технічний університет "Харківський політехнічний інститут", Харків, 2020. Об’єкт дослідження ‒ електрохімічні та хімічні процеси на міжфазовій межі та в оксидному шарі при формуванні гетерооксидних покриттів на сплавах алюмінію і титану. Предмет дослідження – механізм процесу поверхневої обробки сплавів алюмінію та титану у лужних розчинах електролітів, технологічні параметри плазмо-електролітного оксидування, склад, структура
APA, Harvard, Vancouver, ISO, and other styles
7

Ndoye, Coumba. "Characterization of Dopant Diffusion in Bulk and lower dimensional Silicon Structures." Thesis, Virginia Tech, 2010. http://hdl.handle.net/10919/46321.

Full text
Abstract:
The semiconductor industry scaling has mainly been driven by Mooreâ s law, which states that the number of transistors on a single chip should double every year and a half to two years. Beyond 2011, when the channel length of the Metal Oxide Field effect transistor (MOSFET) approaches 16 nm, the scaling of the planar MOSFET is predicted to reach its limit. Consequently, a departure from the current planar MOSFET on bulk silicon substrate is required to push the scaling limit further while maintaining electrostatic control of the gate over the channel. Alternative device structures that allow
APA, Harvard, Vancouver, ISO, and other styles
8

Каракуркчі, Ганна Володимирівна. "Науково-технологічні засади плазмо-електролітного формування гетерооксидних покриттів для екотехнологій". Thesis, Національний технічний університет "Харківський політехнічний інститут", 2020. http://repository.kpi.kharkov.ua/handle/KhPI-Press/48802.

Full text
Abstract:
Дисертація на здобуття наукового ступеня доктора технічних наук за спеціальністю 05.17.03 ‒ технічна електрохімія (161 – хімічні технології та інженерія). ‒ Національний технічний університет "Харківський політехнічний інститут", Харків, 2020. Дисертацію присвячено розробці наукових засад технології плазмо-електролітного формування гетерооксидних покриттів заданого складу і функціональних властивостей на сплавах Al (Ti) для екотехнологій. Висунуто та експериментально доведено гіпотези щодо гомогенізації поверхні багатокомпонентних сплавів та формування заданого рельєфу оксидної матриці плазмо-
APA, Harvard, Vancouver, ISO, and other styles
9

Yang, Jing. "Synthesis and characterisation of metal oxyhydroxide and oxide nanomaterials." Thesis, Queensland University of Technology, 2010. https://eprints.qut.edu.au/45712/1/Jing_Yang_Thesis.pdf.

Full text
Abstract:
In this work, a range of nanomaterials have been synthesised based on metal oxyhydroxides MO(OH), where M=Al, Co, Cr, etc. Through a self-assembly hydrothermal route, metal oxyhydroxide nanomaterials with various morphologies were successfully synthesised: one dimensional boehmite (AlO(OH)) nanofibres, zero dimensional indium hydroxide (In(OH)3) nanocubes and chromium oxyhydroxide (CrO(OH)) nanoparticles, as well as two dimensional cobalt hydroxide and oxyhydroxide (Co(OH)2 & CoO(OH)) nanodiscs. In order to control the synthetic nanomaterial morphology and growth, several factors were investig
APA, Harvard, Vancouver, ISO, and other styles
10

Ruess, Frank Joachim Physics Faculty of Science UNSW. "Atomically controlled device fabrication using STM." Awarded by:University of New South Wales. Physics, 2006. http://handle.unsw.edu.au/1959.4/24855.

Full text
Abstract:
We present the development of a novel, UHV-compatible device fabrication strategy for the realisation of nano- and atomic-scale devices in silicon by harnessing the atomic-resolution capability of a scanning tunnelling microscope (STM). We develop etched registration markers in the silicon substrate in combination with a custom-designed STM/ molecular beam epitaxy system (MBE) to solve one of the key problems in STM device fabrication ??? connecting devices, fabricated in UHV, to the outside world. Using hydrogen-based STM lithography in combination with phosphine, as a dopant source, and sil
APA, Harvard, Vancouver, ISO, and other styles
More sources

Book chapters on the topic "Metal-dopant"

1

Sukanya, D., A. Antony Heartlin Sancta, and K. Shruti. "An Analysis on the Effects of Metal Ion Dopant in the Structural, Optical, Morphological, and Magnetic Properties of Zinc Sulphide Nanoparticles." In Recent Advances in Nanomaterials. Springer Nature Singapore, 2023. http://dx.doi.org/10.1007/978-981-99-4878-9_55.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Huang, Shiou-Mei, and Richard B. Kaner. "Highly Charged Dopant Ions for Polyacetylene." In Inorganic and Metal-Containing Polymeric Materials. Springer US, 1990. http://dx.doi.org/10.1007/978-1-4613-0669-6_4.

Full text
APA, Harvard, Vancouver, ISO, and other styles
3

Jayakumar, O. D., C. Persson, A. K. Tyagi, and C. Sudakar. "Experimental and Theoretical Investigations of Dopant, Defect, and Morphology Control on the Magnetic and Optical Properties of Transition Metal Doped ZnO Nanoparticles." In ZnO Nanocrystals and Allied Materials. Springer India, 2013. http://dx.doi.org/10.1007/978-81-322-1160-0_17.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Chand Verma, Kuldeep. "Diluted Magnetic Semiconductor ZnO: Magnetic Ordering with Transition Metal and Rare Earth Ions." In Magnetic Materials [Working Title]. IntechOpen, 2020. http://dx.doi.org/10.5772/intechopen.90369.

Full text
Abstract:
For advancement in future spintronics, the diluted magnetic semiconductors (DMSs) might be understood for their origin of ferromagnetic aptness. It not much clear to the ferromagnetism in DMS, that is intrinsic or via dopant clustering formation. For this, we have included a review study for the doping of transition metal and rare earth ions in ZnO. It is realized that the antiferromagnetic ordering is found in doped ZnO to achieve high-TC ferromagnetism. X-ray diffraction and Raman spectra techniques have been used to detect the wurtzite ZnO structure and lattice defects. Since ZnO has differ
APA, Harvard, Vancouver, ISO, and other styles
5

Tinti, Victor Buratto, Ahsanul Kabir, Daniel Zanetti de Florio, and Vincenzo Esposito. "The role of dopant on the defect chemistry of metal oxides." In Metal Oxide Defects. Elsevier, 2023. http://dx.doi.org/10.1016/b978-0-323-85588-4.00010-6.

Full text
APA, Harvard, Vancouver, ISO, and other styles
6

Ayyakannu Sundaram, Ganeshraja, Rajkumar Kanniah, and Vaithinathan Karthikeyan. "Tuning the Magnetic and Photocatalytic Properties of Wide Bandgap Metal Oxide Semiconductors for Environmental Remediation." In Updates on Titanium Dioxide. IntechOpen, 2023. http://dx.doi.org/10.5772/intechopen.110422.

Full text
Abstract:
The review focuses on recent developments towards preparing room temperature ferromagnetic metal oxide semiconductors for better photocatalytic performance. Here we reported the combined study of photocatalytic and ferromagnetic properties at room temperature on metal oxides, particularly TiO2, which is rapidly an emerging field in the development of magnetism and environmental remediation. Even after decades of research in this area, the exact mechanism of the combination of ferromagnetism and photocatalysis in these materials has been not understood completely. However, some of the critical
APA, Harvard, Vancouver, ISO, and other styles
7

Chen, Shoushun, Bryan E. G. Lucier, Xin Du, Yun-lei Peng, and Yining Huang. "NMR of Metal Centers and Doped Metals in MOFs and COFs." In NMR of Metal–Organic Frameworks and Covalent Organic Frameworks. Royal Society of Chemistry, 2024. https://doi.org/10.1039/9781839167287-00035.

Full text
Abstract:
There have been tremendous advances in the fields of metal–organic frameworks (MOFs) and covalent-organic frameworks (COFs) over the past two decades. The rapidly expanding number of MOFs and COFs, along with their various associated properties, has highlighted the need for effective structural characterization routes in order to elucidate structure–property relationships. Solid-state nuclear magnetic resonance (SSNMR) spectroscopy provides unique insights that are helpful for understanding and rationalizing the local structure of various materials. In this chapter, we summarize the significan
APA, Harvard, Vancouver, ISO, and other styles
8

Srivastava, Ambrish Kumar, and Ruby Srivastava. "Adsorption of CO2 on Transition Metal-Doped Cu Clusters: A DFT Study." In DFT-Based Studies On Atomic Clusters. BENTHAM SCIENCE PUBLISHERS, 2024. http://dx.doi.org/10.2174/9789815274042124010005.

Full text
Abstract:
Activation of CO2 is the first step towards its reduction to more useful chemicals. Electrochemical CO2 reduction reactions can lead to high value-added chemical and materials production while helping decrease anthropogenic CO2 emissions. In studies, it was found that copper metal clusters can reduce CO2 to more than thirty different hydrocarbons and oxygenates, yet they lack the required selectivity. Density functional theory (DFT)-based studies are carried out on copper clusters, doped clusters, nano-structures and Cu-based alloy catalysts to assess the activity and selectivity of CO2 reduct
APA, Harvard, Vancouver, ISO, and other styles
9

Daud, Alias, and Masataka Hirose. "Oxide and nitrided oxide grown on silicon at low temperature." In Chemistry and Technology of Silicon and Tin. Oxford University PressOxford, 1992. http://dx.doi.org/10.1093/oso/9780198555803.003.0036.

Full text
Abstract:
Abstract An efficient low-temperature technique is necessary in the fabrication of sub-micron VLSI devices in order to minimize problems such as substrate webpage, dopant redistribution, and defect generation that are associated with conventional high-temperature techniques. The oxidation of silicon to thin silicon dioxide films is presently carried out at temperatures around 1000°C. The oxidation rate under a dry oxygen atmosphere is extremely low at temperatures below 800°C, however, and the resulting silicon-silicon dioxide interfaces are unsuitable for practical applications. Nitridation t
APA, Harvard, Vancouver, ISO, and other styles
10

Sua, L. S. "Technical Potential Evaluation of Inorganic Tin Perovskite Solar Cells." In Perovskite based Materials for Energy Storage Devices. Materials Research Forum LLC, 2023. http://dx.doi.org/10.21741/9781644902738-6.

Full text
Abstract:
A component that contributes to high efficiency is the photovoltaic cell design. The perovskite photovoltaic cell is a shining star in the world of the solar panel industry. Since perovskite structure allows ions as a dopant, this path with a variety of metal cations can be pursued further. Although the subject of selecting renewable energy supplies has been explored in the literature, the challenge of selecting solar panels has only been studied in a handful of studies. The inorganic tin perovskite photovoltaic cells as the selection problem with multiple-criteria decision-making methodology
APA, Harvard, Vancouver, ISO, and other styles

Conference papers on the topic "Metal-dopant"

1

Gao, Yanlin, and Susumu Okada. "Energetics and electronic structures of Nb-doped WSSe layers." In JSAP-Optica Joint Symposia. Optica Publishing Group, 2024. https://doi.org/10.1364/jsapo.2024.18a_a35_5.

Full text
Abstract:
Janus transition metal dichalcogenides (Janus TMDs) are a novel two-dimensional semiconductor. They consist of 3 atomic layers, where the transition metal layer is sandwiched by different chalcogen atom layers. This structural asymmetry produces a dipole moment normal to their layers, making them fascinating materials. The dipole moment provides the freedom to modulate the electronic structures of their stacking structures [1]. For example, bilayer Janus WSSe with SSe interface has staggered band edge alignment between two layers, while it has shallower or deeper band edge when it has SS or Se
APA, Harvard, Vancouver, ISO, and other styles
2

Jain, Puneet, Shotaro Yotsuya, Kosuke Nagashio, and Daisuke Kiriya. "Self-assembly of dopant molecules on MoS2 monolayer for degeneracy/heavily doping." In JSAP-Optica Joint Symposia. Optica Publishing Group, 2024. https://doi.org/10.1364/jsapo.2024.18a_a35_1.

Full text
Abstract:
Transition metal dichalcogenides (TMDs) are class of materials with general formula MX2, where M is transition metal element from group IV, V, and VI (Mo, W, etc.); while X is chalcogen (S, Se, or Te). As the thickness of TMD decreases from bulk to monolayer, 2D TMDs exhibits a series of specific properties. Among all TMDs, molybdenum disulfide (MoS2) is one of the few with a natural layered structure, indicating that MoS2 can be stripped easily using scotch tape, to obtain high-quality MoS2 monolayer, without complicated chemical synthesis. MoS2 monolayer is an emergent semiconductor having a
APA, Harvard, Vancouver, ISO, and other styles
3

Rebecchi, Luca, and Ilka Kriegel. "Dopant Placement Control in Metal Oxides Nanocrystals." In nanoGe Spring Meeting 2022. Fundació Scito, 2022. http://dx.doi.org/10.29363/nanoge.nsm.2022.170.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Ramasubramaniam, Ashwin. "Dopant Engineering of Transition-Metal Dichalcogenides for Electrocatalysis." In nanoGe Fall Meeting 2021. Fundació Scito, 2021. http://dx.doi.org/10.29363/nanoge.nfm.2021.203.

Full text
APA, Harvard, Vancouver, ISO, and other styles
5

Nakanoya, Tsutomu, and Maki Egami. "A Safe Solution to Dopant Gas Desorption from Metal Surfaces." In ION IMPLANTATION TECHNOLOGY: 16th International Conference on Ion Implantation Technology - IIT 2006. AIP, 2006. http://dx.doi.org/10.1063/1.2401564.

Full text
APA, Harvard, Vancouver, ISO, and other styles
6

YOUSSEF, Laurène, Audrey PROROT, Alain DENOIRJEAN, Laurène GNODÉ, Thibault MAERTEN, and Canet ACIKGOZ. "Development of ‘smart’ metal-matrix or metal-dopant antibacterial surface coatings by dry deposition techniques." In Les journées de l'interdisciplinarité 2023. Université de Limoges, 2024. http://dx.doi.org/10.25965/lji.751.

Full text
Abstract:
The emergence of the SARS-CoV-2 virus in late 2019 shook the scientific community. Research teams from different fields then quickly mobilized to seek adequate and efficient long-term solutions. However, pathogens are not only limited to viruses: bacteria are microorganisms found in all environments and also likely to cause human diseases. One of the possible transmission routes is through contact with surfaces touched by infected people. In this work, coatings with an antibacterial matrix of Cu are developed by plasma spraying at IRCER, Limoges and doped with a photo-catalyst, TiO2, in order
APA, Harvard, Vancouver, ISO, and other styles
7

Wu, Meng-Hsiu, Chien-Hung Lin, Kuei-Hsien Chen, and Li-Chyong Chen. "Electric and photovoltaic properties of different phthalocyanines with metal dopant layer." In Organic Photovoltaics VII. SPIE, 2006. http://dx.doi.org/10.1117/12.679351.

Full text
APA, Harvard, Vancouver, ISO, and other styles
8

Lopez, Edgar Clyde R. "Rational Selection of Transition Metal Co-Dopant in Sulfur-Doped Titanium Dioxide." In ECP 2023. MDPI, 2023. http://dx.doi.org/10.3390/ecp2023-14699.

Full text
APA, Harvard, Vancouver, ISO, and other styles
9

Sarwan, Bhawna, Indervir Singh Chander, and Aman Deep Acharya. "Effect of transition metal dopant on the physical and photocatalytic properties of BiOCl." In PROF. DINESH VARSHNEY MEMORIAL NATIONAL CONFERENCE ON PHYSICS AND CHEMISTRY OF MATERIALS: NCPCM 2018. Author(s), 2019. http://dx.doi.org/10.1063/1.5098555.

Full text
APA, Harvard, Vancouver, ISO, and other styles
10

Krauss, Tillmann, Frank Wessely, and Udo Schwalke. "Electrically reconfigurable dual metal-gate planar field-effect transistor for dopant-free CMOS." In 2016 13th International Multi-Conference on Systems, Signals & Devices (SSD). IEEE, 2016. http://dx.doi.org/10.1109/ssd.2016.7473724.

Full text
APA, Harvard, Vancouver, ISO, and other styles
You might also be interested in the extended bibliographies on the topic 'Metal-dopant' for particular source types:
Journal articles Dissertations / Theses
We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!

To the bibliography