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Dissertations / Theses on the topic 'Metal-dopant'

Author: Grafiati

Published: 30 May 2022

Last updated: 31 July 2025

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1

Quevedo-Lopez, Manuel Angel. "Materials properties of hafnium and zirconium silicates: Metal interdiffusion and dopant penetration studies." Thesis, University of North Texas, 2002. https://digital.library.unt.edu/ark:/67531/metadc3221/.

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Hafnium and Zirconium based gate dielectrics are considered potential candidates to replace SiO2 or SiON as the gate dielectric in CMOS processing. Furthermore, the addition of nitrogen into this pseudo-binary alloy has been shown to improve their thermal stability, electrical properties, and reduce dopant penetration. Because CMOS processing requires high temperature anneals (up to 1050 °C), it is important to understand the diffusion properties of any metal associated with the gate dielectric in silicon at these temperatures. In addition, dopant penetration from the doped polysilicon gate in

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2

Sharma, Pratigya. "Dopant interaction in binary metal oxide system: Towards the development of an improved supercapacitor material." Thesis, Sharma, Pratigya (2022) Dopant interaction in binary metal oxide system: Towards the development of an improved supercapacitor material. PhD thesis, Murdoch University, 2022. https://researchrepository.murdoch.edu.au/id/eprint/65293/.

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Technological advancement has raised the expectation on the role of energy storage systems. With the transition towards renewable technologies like solar and wind, demand for efficient energy storage systems capable of harvesting energy from various sources and delivering stable electricity output to meet customers' demand is in priority. Supercapacitors (SCs) are complementary to battery technology. However, SCs can provide high power density, longer life cycle, and superior round-trip efficiency compared to battery systems. Hence, it holds an important space in energy storage technology. Thi

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3

Ravichandran, Karthik. "Nano-scale process and device simulation." Connect to resource, 2005. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=osu1125340288.

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4

Deus, Dominike Pacine de Andrade. "Estudo teórico das propriedades estruturais, eletrônicas e magnéticas de superfícies semicondutoras dopadas: (i) metais de transição sobre o InAs(110) e (001) e (ii) boro sobre o Si(111)." Universidade Federal de Uberlândia, 2017. https://repositorio.ufu.br/handle/123456789/18399.

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CAPES - Coordenação de Aperfeiçoamento de Pessoal de Nível Superior<br>CENAPAD - Centro Nacional de Processamento de Alto Desempenho em São Paulo<br>FAPEMIG - Fundação de Amparo a Pesquisa do Estado de Minas Gerais<br>Utilizando cálculos de primeiro princípios, nós encontramos propriedades estruturais, eletrônicas e magnéticas dos metais de transição (MTs) Co, Fe e Mn depositados em InAs(110) e InAs(001), uma superfície semicondutora III-V. Em relação às propriedades estruturais, obtidas através de relaxação iônica e imagens STM (do inglês, scanning tunneling microscopy) teóricas, nós verifica

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5

Kortan, Victoria Ramaker. "Transition-metal dopants in tetrahedrally bonded semiconductors: symmetry and exchange interactions from tight-binding models." Diss., University of Iowa, 2015. https://ir.uiowa.edu/etd/1865.

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It has become increasingly apparent that the future of electronic devices can and will rely on the functionality provided by single or few dopant atoms. The most scalable physical system for quantum technologies, i.e. sensing, communication and computation, are spins in crystal lattices. Diamond is an excellent host crystal offering long room temperature spin coherence times and there has been exceptional experimental work done with the nitrogen vacancy center in diamond demonstrating many forms of spin control. Transition metal dopants have additional advantages, large spin-orbit interaction

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6

Каракуркчі, Ганна Володимирівна. "Науково-технологічні засади плазмо-електролітного формування гетерооксидних покриттів для екотехнологій". Thesis, Національний технічний університет "Харківський політехнічний інститут", 2020. http://repository.kpi.kharkov.ua/handle/KhPI-Press/48805.

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Дисертація на здобуття наукового ступеня доктора технічних наук за спеціальністю 05.17.03 – технічна електрохімія (161 – хімічні технології та інженерія). ‒ Національний технічний університет "Харківський політехнічний інститут", Харків, 2020. Об’єкт дослідження ‒ електрохімічні та хімічні процеси на міжфазовій межі та в оксидному шарі при формуванні гетерооксидних покриттів на сплавах алюмінію і титану. Предмет дослідження – механізм процесу поверхневої обробки сплавів алюмінію та титану у лужних розчинах електролітів, технологічні параметри плазмо-електролітного оксидування, склад, структура

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7

Ndoye, Coumba. "Characterization of Dopant Diffusion in Bulk and lower dimensional Silicon Structures." Thesis, Virginia Tech, 2010. http://hdl.handle.net/10919/46321.

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The semiconductor industry scaling has mainly been driven by Mooreâ s law, which states that the number of transistors on a single chip should double every year and a half to two years. Beyond 2011, when the channel length of the Metal Oxide Field effect transistor (MOSFET) approaches 16 nm, the scaling of the planar MOSFET is predicted to reach its limit. Consequently, a departure from the current planar MOSFET on bulk silicon substrate is required to push the scaling limit further while maintaining electrostatic control of the gate over the channel. Alternative device structures that allow

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8

Каракуркчі, Ганна Володимирівна. "Науково-технологічні засади плазмо-електролітного формування гетерооксидних покриттів для екотехнологій". Thesis, Національний технічний університет "Харківський політехнічний інститут", 2020. http://repository.kpi.kharkov.ua/handle/KhPI-Press/48802.

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Дисертація на здобуття наукового ступеня доктора технічних наук за спеціальністю 05.17.03 ‒ технічна електрохімія (161 – хімічні технології та інженерія). ‒ Національний технічний університет "Харківський політехнічний інститут", Харків, 2020. Дисертацію присвячено розробці наукових засад технології плазмо-електролітного формування гетерооксидних покриттів заданого складу і функціональних властивостей на сплавах Al (Ti) для екотехнологій. Висунуто та експериментально доведено гіпотези щодо гомогенізації поверхні багатокомпонентних сплавів та формування заданого рельєфу оксидної матриці плазмо-

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9

Yang, Jing. "Synthesis and characterisation of metal oxyhydroxide and oxide nanomaterials." Thesis, Queensland University of Technology, 2010. https://eprints.qut.edu.au/45712/1/Jing_Yang_Thesis.pdf.

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In this work, a range of nanomaterials have been synthesised based on metal oxyhydroxides MO(OH), where M=Al, Co, Cr, etc. Through a self-assembly hydrothermal route, metal oxyhydroxide nanomaterials with various morphologies were successfully synthesised: one dimensional boehmite (AlO(OH)) nanofibres, zero dimensional indium hydroxide (In(OH)3) nanocubes and chromium oxyhydroxide (CrO(OH)) nanoparticles, as well as two dimensional cobalt hydroxide and oxyhydroxide (Co(OH)2 & CoO(OH)) nanodiscs. In order to control the synthetic nanomaterial morphology and growth, several factors were investig

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10

Ruess, Frank Joachim Physics Faculty of Science UNSW. "Atomically controlled device fabrication using STM." Awarded by:University of New South Wales. Physics, 2006. http://handle.unsw.edu.au/1959.4/24855.

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We present the development of a novel, UHV-compatible device fabrication strategy for the realisation of nano- and atomic-scale devices in silicon by harnessing the atomic-resolution capability of a scanning tunnelling microscope (STM). We develop etched registration markers in the silicon substrate in combination with a custom-designed STM/ molecular beam epitaxy system (MBE) to solve one of the key problems in STM device fabrication ??? connecting devices, fabricated in UHV, to the outside world. Using hydrogen-based STM lithography in combination with phosphine, as a dopant source, and sil

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11

吳憲明. "Studies on dopant-polymer interaction in transition metal chloride-doped polyacetylene." Thesis, 1987. http://ndltd.ncl.edu.tw/handle/11235489256319323288.

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12

YEH, WEI-TING, and 葉威廷. "Metal Dopant induced Singlet-to-TripletTransition in Alq3 and thus Organic Solar CellApplications." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/03910600277389031030.

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碩士<br>中原大學<br>應用物理研究所<br>96<br>Tris-(8-hydrozyquinoline)aluminum (Alq3), is one of the most frequently used low-molecular weight materials for organic light-emitting devices(OLEDs), and is a so called fluorescence emitter, but it’s triplet exciton are also expected to play an implortant role in the organic photovoltaic devices. Because of the spin statistic of the exciton, the lifetime of these triplet exciton are significanty longer than that of the singlet exciton. If the long lifetime of these triplet exciton can be used, it will result in long exciton diffusion lenth which is good for orga

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13

Redwing, Joan Marie. "A study of dopant incorportion into gallium arsenide grown by metal-orgnic vapor phase epitaxy." 1994. http://catalog.hathitrust.org/api/volumes/oclc/32264444.html.

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14

Meng-Hsiu, Wu. "Performance Improvement of Organic Light-Emitting Device by Using Metal-Dopant Technology and a Red Dye." 2005. http://www.cetd.com.tw/ec/thesisdetail.aspx?etdun=U0001-2407200520332500.

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15

Wu, Meng-Hsiu, and 吳孟修. "Performance Improvement of Organic Light-Emitting Device by Using Metal-Dopant Technology and a Red Dye." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/80577158148549612393.

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碩士<br>國立臺灣大學<br>光電工程學研究所<br>93<br>In this thesis, the OLED performance of novel cesium (Cs) doped 4,4''-bis(5-phenyl-[1,3,4]oxadiazol-2-yl)-2,2''-dinaphthylbiphenyl (bis-OXD), a metal-doped electron transport layer (MD-ETL), is reported herein. Cs is a heavy alkali atom and difficult to diffuse in an organic matrix. The metal quenching effect is therefore reduced in a long-term operation. The host material, bis-OXD, exhibits a high glass transition temperature (Tg) of 147 oC. The average roughness of the thin film is small when compared with other derivatives. The leakage current of the corres

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16

Cheng, Chiao-Yun, and 鄭喬勻. "Effects of boron dopant on optical properties and electrical conductivities of ZnO prepared by metal organic chemical vapor deposition." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/dpv85s.

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碩士<br>國立中興大學<br>材料科學與工程學系所<br>101<br>Compared with sputtering technique for the growth of boron doped zine oxide (ZnO:B) thin films, metal organic chemical vapor deposition( MOCVD) can directly create textured morphology with excellent light scattering for front electrode application in tandem solar cells. It is also easy to control coating composition and crystal quality, revealing many advantages such as coating on complex shaped substrate with dense structure and good adhesion. For large-scale commercialized production, it is one of the preferred deposition techniques, too. In this study, d

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17

Chang, Han Tung, and 張翰東. "Process Variation Effect, Metal-Gate Work-Function Fluctuation and Random Dopant Fluctuation of 10-nm Gate-All-Around Nanowire MOSFET Devices." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/6636up.

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碩士<br>國立交通大學<br>電信工程研究所<br>103<br>As the technology node extends to sub-16 nm, the task of device scaling is getting more troublesome. Planar MOSFET could not satisfy the demand of performance. Hence, new structure such as multi-gate structure are proposed. Gate-all-around nanowire (GAA NW) MOSFET device is one of the most attractive structures. Besides, variability problems are becoming so crucial that they degrade the devices’ characteristic as well. Process variation effect (PVE), random dopant fluctuation (RDF) and work function fluctuation (WKF) are major fluctuation sources of all. In th

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18

LO, WEN-TSE, and 羅文澤. "Understanding the role of dopant metal atoms on the structural and electronic properties of Lithium rich Li1.2Ni0.2Mn0.6O2 Cathode material for Li-ion Batteries." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/3x53j5.

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碩士<br>國立臺灣科技大學<br>化學工程系<br>107<br>Li-ion batteries have been viewed as an efficient energy storage system since they firstly commercialized in the 1990s. Compared with convention lithium cobalt oxide, Li1.2Ni0.2Mn0.6O2 layered material can deliver higher specific capacity (~250 mAh/g) and high energy density (~1000 Wh/kg). Nevertheless, these materials still face some critical problems such as structural instability, voltage fading, and low rate performance. By the aid of DFT calculations, we demonstrated Li1.2Ni0.2Mn0.6O2 structure in atomic level. To solve the structural instability problem,

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19

Chen, Yu-Yu, and 陳昱宇. "DC Characteristic Fluctuation of 16-nm-Gate HKMG Bulk FinFET Devices Induced by Random Position of Discrete Dopant and Random Grain of Metal Gate." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/ssv742.

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碩士<br>國立交通大學<br>電信工程研究所<br>102<br>Innovation of fabrication process, device, device material, and vertical channel structure benefits the mass production of CMOS devices. It continues to support and energize the performance projection of Moore’s law. Performance improvement of nanometerscaled CMOS devices requires not only overcoming a variety of fabrication challenges but also suppressing systematic variation and random effects. Except the process variation effects, the random effects including random dopants (RDs), interface traps (ITs), and work functions (WKs) are crucial for device charac

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20

(8083202), Andres Villa Pulido. "DESIGN AND CHARACTERIZATION OF A PEO-BASED POLYMER COMPOSITE ELECTROLYTE EMBEDDED WITH DOPED-LLZO: ROLE OF DOPANT IN BULK IONIC CONDUCTIVITY." Thesis, 2019.

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Ionic conductivity of solid polymer electrolytes (SPEs) can be enhanced by the addition of fillers, while maintaining good chemical stability, and compatibility with popular cathode and anode materials. Additionally, polymer composite electrolytes can replace the flammable organic liquid in a lithium-ion battery design and are compatible with lithium metal. Compatibility with Li-metal is a key development towards a next-generation rechargeable Li-ion battery, as a Li-metal anode has a specific capacity an order of magnitude higher than LiC6 anodes used today in everyday devices. The addition o

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