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Journal articles on the topic 'Metal-dopant'

Author: Grafiati

Published: 30 May 2022

Last updated: 31 July 2025

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1

Wang, Ting, Yan Dong Mao, Fang Peng Tang, Jun Xing, and Li Guang Wu. "Crystallization and Photocatalytic-Activity of TiO₂ Doped with Metal Ions Prepared by Adsorption Phase Synthesis." Advanced Materials Research 624 (December 2012): 194–99. http://dx.doi.org/10.4028/www.scientific.net/amr.624.194.

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TiO2 photocatalysts doped with different metal ions were prepared by adsorption phase synthesis. The influence of different dopant metal ions with various concentrations on the crystallization of TiO2 was ex-plored by XRD. Then photodegradation experiments of methyl-orange were employed to evaluate the activity of these photocatalysts. The results indicated that the crystallization of TiO2 was restricted after doping, due to replacement of Ti4+ in TiO2 lattice structure by other metal ions. And the restriction became stronger with radius and concentration of doping ions increasing. There was a

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2

Rojanasuwan, Sunit, Pakorn Prajuabwan, Annop Chanhom, Anuchit Jaruvanawat, Adirek Rangkasikorn, and Jiti Nukeaw. "The Effect of the Central Metal Atom on the Structural Phase Transition of Indium Doped Metal Phthalocyanine." Advanced Materials Research 717 (July 2013): 146–52. http://dx.doi.org/10.4028/www.scientific.net/amr.717.146.

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We investigate the effect of central metal atom on the phthalocyanine (Pc) molecular crystals as intercalated with indium. As dopant, indium has physical interaction with some atom in the ring of Pc molecule and there is charge transfer between indium atom and Pc ring atom. Since In-doped Pc is a hole doping which increase positive charge carriers and the HOMO of ZnPc, CuPc, NiPc and MgPc are localized on the phthalocyanine ring, then, the central metal atom e.g. Zn, Cu, Ni and Mg are not directly involved with the charge transfer between indium dopant and their Pc molecule. The structural pha

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3

Park, Jin-Hong, Woo-Shik Jung, and Hyun-Yong Yu. "Dopant-dependence of one-step metal-induced dopant activation process in silicon." Current Applied Physics 12, no. 3 (2012): 995–97. http://dx.doi.org/10.1016/j.cap.2012.01.002.

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Drabczyk, Kazimierz, Edyta Wróbel, Grazyna Kulesza-Matlak, Wojciech Filipowski, Krzysztof Waczynski, and Marek Lipinski. "Comparison of diffused layer prepared using liquid dopant solutions and pastes for solar cell with screen printed electrodes." Microelectronics International 33, no. 3 (2016): 167–71. http://dx.doi.org/10.1108/mi-03-2016-0031.

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Purpose The purpose of this study is comparison of the diffusion processes performed using the commercial available dopant paste made by Filmtronics and the original prepared liquid dopant solution. To decrease prices of industrially produced silicon-based solar cells, the new low-cost production processes are necessary. The main components of most popular silicon solar cells are with diffused emitter layer, passivation, anti-reflective layers and metal electrodes. This type of cells is prepared usually using phosphorus oxychloride diffusion source and metal pastes for screen printing. The dif

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5

Saga, Koichiro. "Diffusion Behavior of Transition Metals Penetrating Silicon Substrate through Silicon Dioxides by Dopant Ion Implantation." Solid State Phenomena 195 (December 2012): 261–64. http://dx.doi.org/10.4028/www.scientific.net/ssp.195.261.

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Metallic contamination on silicon surfaces has a detrimental impact on ULSI device performance and yield. Surface metal impurities degrade gate oxide integrity while metal impurities dissolved in silicon cause recombination centers and result in junction leakage. Surface metal impurities penetrate silicon by the colliding with dopant during ion implantation and are also diffused in silicon by subsequent annealing [. The diffusion behavior of metal impurities in silicon is well-known [. While metal impurities often penetrate silicon through the silicon oxide in ULSI processing, little work has

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6

Han, Juan, Xu Wu, Julia Xiaojun Zhao, and David T. Pierce. "An Unprecedented Metal Distribution in Silica Nanoparticles Determined by Single-Particle Inductively Coupled Plasma Mass Spectrometry." Nanomaterials 14, no. 7 (2024): 637. http://dx.doi.org/10.3390/nano14070637.

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Metal-containing nanoparticles are now common in applications ranging from catalysts to biomarkers. However, little research has focused on per-particle metal content in multicomponent nanoparticles. In this work, we used single-particle inductively coupled plasma mass spectrometry (ICP-MS) to determine the per-particle metal content of silica nanoparticles doped with tris(2,2′-bipyridyl)ruthenium(II). Monodispersed silica nanoparticles with varied Ru doping levels were prepared using a water-in-oil microemulsion method. These nanoparticles were characterized using common bulk-sample methods s

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Saga, Koichiro, Shunsuke Kobayashi, and Koji Sueoka. "Quantitative Analysis of Transition Metals Penetrating Silicon Substrate through SiN Film by Dopant Ion Implantation and Annealing." Solid State Phenomena 219 (September 2014): 265–67. http://dx.doi.org/10.4028/www.scientific.net/ssp.219.265.

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Metallic contamination on silicon surfaces has a detrimental impact on the performance and yield of ULSI devices. Surface metal impurities degrade the gate oxide integrity while metal impurities dissolved in silicon cause recombination centers and this results in junction leakage. The diffusion behavior of these metal impurities in silicon is well-known [1]. On the other hand, these metal impurities often penetrate the silicon through the silicon oxide or silicon nitride films in ULSI processing. The surface metal impurities penetrate the silicon by colliding with the dopant during ion implant

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8

Canales, Mónica, Juan Manuel Ramírez-de-Arellano, Juan Salvador Arellano, and Luis Fernando Magaña. "Ab Initio Study of the Interaction of a Graphene Surface Decorated with a Metal-Doped C30 with Carbon Monoxide, Carbon Dioxide, Methane, and Ozone." International Journal of Molecular Sciences 23, no. 9 (2022): 4933. http://dx.doi.org/10.3390/ijms23094933.

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Using DFT simulations, we studied the interaction of a semifullerene C30 and a defected graphene layer. We obtained the C30 chemisorbs on the surface. We also found the adsorbed C30 chemisorbs, Li, Ti, or Pt, on its concave part. Thus, the resulting system (C30-graphene) is a graphene layer decorated with a metal-doped C30. The adsorption of the molecules depends on the shape of the base of the semifullerene and the dopant metal. The CO molecule adsorbed without dissociation in all cases. When the bottom is a pentagon, the adsorption occurs only with Ti as the dopant. It also adsorbs for a hex

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9

Probst, V., H. Schaber, A. Mitwalsky, et al. "Metal‐dopant‐compound formation in TiSi2and TaSi2: Impact on dopant diffusion and contact resistance." Journal of Applied Physics 70, no. 2 (1991): 693–707. http://dx.doi.org/10.1063/1.349625.

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10

Gribelyuk, Michael A., Sanjay Mehta, Jeffrey B. Johnson, and Lee Kimball. "Two-dimensional dopant potential mapping in a fin field effect transistor by off-axis electron holography." Journal of Applied Physics 132, no. 4 (2022): 045702. http://dx.doi.org/10.1063/5.0091586.

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Progress in the development of nanometer scaled Fin Field Effect Transistor (FinFET) devices is affected by a lack of understanding of relevant dopant diffusion phenomena due to limited experimental data. In particular, 2D dopant potential mapping by electron holography in 3D FinFET devices has been challenged by the overlap of electrically active fins, metal films, and dielectric films in the electron beam direction. This paper presents methodology on how to map dopant potential in modern FinFET devices. A custom-device structure was developed, which preserved all essential features of the de

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11

Bracht, Hartmut, S. Brotzmann, and Alexander Chroneos. "Impact of Carbon on the Diffusion of Donor Atoms in Germanium." Defect and Diffusion Forum 289-292 (April 2009): 689–96. http://dx.doi.org/10.4028/www.scientific.net/ddf.289-292.689.

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We report experiments on the diffusion of n-type dopants in isotopically controlled Ge multilayer structures doped with carbon. The diffusion profiles reveal a strong aggregation of the dopants within the carbon-doped layers and a retarded penetration depth compared to dopant diffusion in high purity natural Ge. Dopant aggregation and diffusion retardation is strongest for Sb and similar for P and As. Successful modeling of the simultaneous self- and dopant diffusion is performed on the basis of the vacancy mechanism and additional reactions that take into account the formation of carbon-vacan

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12

Mitwalsky, A., and H. Oppolzer. "TEM characterization of metallization systems in VLSI." Proceedings, annual meeting, Electron Microscopy Society of America 49 (August 1991): 818–19. http://dx.doi.org/10.1017/s0424820100088403.

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Detailed knowledge of the properties of metallization systems used in silicon VLSI technolgy is essential to evaluate application and to achieve stable device operation. The progressively shrinking device dimensions require analytical techniques allowing to detect interfacial reactions or precipitation with nanometer resolution, particularly for the development of new processes. Transmission electron microscopy (TEM) of thin cross sections represents a powerful tool for obtaining such information directly. In addition to imaging analytical TEM allows phase and element identification with high

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13

Ferrari, Piero, Guillaume Libeert, Nguyen Minh Tam, and Ewald Janssens. "Interaction of carbon monoxide with doped metal clusters." CrystEngComm 22, no. 29 (2020): 4807–15. http://dx.doi.org/10.1039/d0ce00733a.

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14

Han, Jinkyu, Lei Wang, and Stanislaus S. Wong. "Morphology and dopant-dependent optical characteristics of novel composite 1D and 3D-based heterostructures of CdSe nanocrystals and LaPO4:Re (Re = Eu, Ce, Tb) metal phosphate nanowires." RSC Adv. 4, no. 66 (2014): 34963–80. http://dx.doi.org/10.1039/c4ra05933f.

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15

Umar, Ahmed, Musthafa Ottakam Thotyl, and Abdullahi Hadi. "Perovskite-structured Active Solid Catalyst for Biofuel Synthesis." Catalysis for Sustainable Energy 6, no. 1 (2019): 1–5. http://dx.doi.org/10.1515/cse-2019-0001.

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Abstract A solid catalyst tailored to perovskite structure was synthesized and investigated for catalytic activity in a transesterification reaction to form biodiesel. The catalyst has demonstrated high catalytic activity and selectivity for biodiesel under very mild reaction conditions and short reaction times. The catalyst system has shown robust resistance to leaching of the active phase when reused. The performance was attributable to the perovskite structure and the dopant metal used. Hence, this work has shown that the structure and dopant metal of the solid catalyst could be tailored to

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16

Anil Kumar, Yedluri, Ganesh Koyyada, Dasha Kumar Kulurumotlakatla, et al. "In Situ Grown Mesoporous Structure of Fe-Dopant@NiCoOX@NF Nanoneedles as an Efficient Supercapacitor Electrode Material." Nanomaterials 13, no. 2 (2023): 292. http://dx.doi.org/10.3390/nano13020292.

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In this study, we designed mixed metal oxides with doping compound nano-constructions as efficient electrode materials for supercapacitors (SCs). We successfully prepared the Fe-dopant with NiCoOx grown on nickel foam (Fe-dopant@NiCoOx@NF) through a simple hydrothermal route with annealing procedures. This method provides an easy route for the preparation of high activity SCs for energy storage. Obtained results revealed that the Fe dopant has successfully assisted NiCoOx lattices. The electrochemical properties were investigated in a three-electrode configuration. As a composite electrode for

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17

CHADWICK, A. "EXAFS studies of dopant sites in metal oxides." Solid State Ionics 63-65 (September 1993): 721–27. http://dx.doi.org/10.1016/0167-2738(93)90186-7.

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18

Just, Oliver, and William Rees. "Metal amides: versatile dopant precursors for electronic materials." Advanced Materials for Optics and Electronics 10, no. 3-5 (2000): 213–21. http://dx.doi.org/10.1002/1099-0712(200005/10)10:3/5<213::aid-amo419>3.0.co;2-#.

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19

Tan, Hong Ling, Cong Ying Jia, Chao Xiang, and Ying Xiang Yang. "Impact Electrical Property of Alkali Metal Doped ZnO." Advanced Materials Research 468-471 (February 2012): 1501–7. http://dx.doi.org/10.4028/www.scientific.net/amr.468-471.1501.

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Calculate the electronic structure of alkali metal ion-doped Zn crystal, based on density functional theory (DFT) first-principles plane-wave ultra-soft pseudo-potential method. Analyze the band structure of alkali metal ion-doped ZnO crystal, and the electronic density of states. The results indicated that in theory, the doping of alkali metal ions are able to form a p-type ZnO semiconductor, and introduce in the deep acceptor levels. In the actual substitution process, the dopant ions may enter the interstitial site. Thus the alkali metal ions are tending to become donor interstitial impurit

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20

Ma, Yanjiao, Yuan Ma, Gabriele Giuli, et al. "Conversion/alloying lithium-ion anodes – enhancing the energy density by transition metal doping." Sustainable Energy & Fuels 2, no. 12 (2018): 2601–8. http://dx.doi.org/10.1039/c8se00424b.

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21

Yamato, Tatsunori, Koji Sueoka, and Takahiro Maeta. "First-Principles Analysis on Interaction between Dopant (Ga, Sb) and Contamination Metal Atoms in Ge Crystals." Solid State Phenomena 205-206 (October 2013): 417–21. http://dx.doi.org/10.4028/www.scientific.net/ssp.205-206.417.

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The lowest energetic configurations of metal impurities in 4throw (Sc - Zn), 5throw (Y - Cd) and 6throw (Hf - Hg) elements in Ge crystals were determined with density functional theory calculations. It was found that the substitutional site is the lowest energetic configuration for most of the calculated metals in Ge. The most stable configurations of dopant (Ga, Sb) - metal complexes in Ge crystals were also investigated. Following results were obtained. (1) For Ga dopant, 1st neighbor T-site is the most stable for metals in group 3 to 7 elements while substitutional site next to Ga atom is t

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22

Li, Bin, Yihan Zhang, Yang Liu, et al. "Highly Efficient Contact Doping for High-Performance Organic UV-Sensitive Phototransistors." Crystals 12, no. 5 (2022): 651. http://dx.doi.org/10.3390/cryst12050651.

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Organic ultraviolet (UV) phototransistors are promising for diverse applications. However, wide-bandgap organic semiconductors (OSCs) with intense UV absorption tend to exhibit large contact resistance (Rc) because of an energy-level mismatch with metal electrodes. Herein, we discovered that the molecular dopant of 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) was more efficient than the transition metal oxide dopant of MoO3 in doping a wide-bandgap OSC, although the former showed smaller electron affinity (EA). By efficient contact doping, a low Rc of 889 Ω·cm and a high mobil

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23

Barabás, Júlia, Piero Ferrari, Vladimir Kaydashev, Jan Vanbuel, Ewald Janssens, and Tibor Höltzl. "The effect of size, charge state and composition on the binding of propene to yttrium-doped gold clusters." RSC Advances 11, no. 47 (2021): 29186–95. http://dx.doi.org/10.1039/d1ra03262c.

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24

Liu, Shen, Daqin Chen, Zhongyi Wan, Yang Zhou, Ping Huang, and Zhenguo Ji. "Phase structure control and optical spectroscopy of rare-earth activated GdF3 nanocrystal embedded glass ceramics via alkaline-earth/alkali-metal doping." RSC Advances 6, no. 75 (2016): 71176–87. http://dx.doi.org/10.1039/c6ra17332b.

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25

Qin, Guo Qiang, Guang Lei Zhang, Shi Min Liu, Hua Fu, and Jing Wen. "Ab Initio Study on Ta:SnO₂." Advanced Materials Research 160-162 (November 2010): 574–78. http://dx.doi.org/10.4028/www.scientific.net/amr.160-162.574.

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The structural, electronic and optical properties of a tantalum doped rutile-phased stannic oxide were investigated by ab initio calculations. The Ta dopant doesn’t change the lattice symmetry of rutile phase, but brings about a smaller volume expansion comparing with Sb:SnO2, a increase in thermal stability, a semiconductor-metal transition in electronic structure and a red shift in the optical spectrum. The intra-band excitation caused by Ta dopant leads to to a remarkable enhancement of optical peaks in the infrared region, while the stability of optical spectrum in the visible light region

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26

Pandey, Kavita, Pankaj Yadav, and Indrajit Mukhopadhyay. "Elucidating the effect of copper as a redox additive and dopant on the performance of a PANI based supercapacitor." Physical Chemistry Chemical Physics 17, no. 2 (2015): 878–87. http://dx.doi.org/10.1039/c4cp04321a.

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27

Lee, Jin Ah, Won Jun Lee, Joonwon Lim, and Sang Ouk Kim. "N-Dopant-Mediated Growth of Metal Oxide Nanoparticles on Carbon Nanotubes." Nanomaterials 11, no. 8 (2021): 1882. http://dx.doi.org/10.3390/nano11081882.

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Metal oxide nanoparticles supported on heteroatom-doped graphitic surfaces have been pursued for several decades for a wide spectrum of applications. Despite extensive research on functional metal oxide nanoparticle/doped carbon nanomaterial hybrids, the role of the heteroatom dopant in the hybridization process of doped carbon nanomaterials has been overlooked. Here, the direct growth of MnOx and RuOx nanoparticles in nitrogen (N)-doped sites of carbon nanotubes (NCNTs) is presented. The quaternary nitrogen (NQ) sites of CNTs actively participate in the nucleation and growth of the metal nano

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28

Kim, Young-Su, Min-Sun Kim, and Seung-Ki Joo. "Effect of Adjacent Metal and Dopant on Pd-Metal Induced Lateral Crystallization." Journal of The Electrochemical Society 153, no. 2 (2006): H19. http://dx.doi.org/10.1149/1.2138673.

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29

Li, Yuexiang, Shaoqin Peng, Fengyi Jiang, Gongxuan Lu, and Shuben Li. "Effect of doping TiO2 with alkaline-earth metal ions on its photocatalytic activity." Journal of the Serbian Chemical Society 72, no. 4 (2007): 393–402. http://dx.doi.org/10.2298/jsc0704393l.

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TiO2 photocatalysts doped with alkaline-earth metal ions were prepared by the impregnation and coprecipitation methods. The sample were characterized by XRD, XPS and IR spectroscopy. Their activities were evaluated by the photocatalytic production of hydrogen. The activities of the doped photocatalysts dopended on the size of the dopant ions and the doping method. The optimum molar contents of dopant ions Be2+, Mg2+, Ca2+, Sr2+, Ba2+ were 1.25, 1.25, 2.25, 2.25 and 2.25 at. %, respectively. The optimum calcination temperature and time were 400?C and 1 h. .

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Carey, J. J., and M. Nolan. "Cation doping size effect for methane activation on alkaline earth metal doping of the CeO2 (111) surface." Catalysis Science & Technology 6, no. 10 (2016): 3544–58. http://dx.doi.org/10.1039/c5cy01787d.

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31

Zhou, Chuan, Haiyang Yuan, P. Hu, and Haifeng Wang. "A general doping rule: rational design of Ir-doped catalysts for the oxygen evolution reaction." Chemical Communications 56, no. 96 (2020): 15201–4. http://dx.doi.org/10.1039/d0cc06282k.

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32

Chen, Liyu, Lei Zhang, Zhijie Chen, Hongli Liu, Rafael Luque, and Yingwei Li. "A covalent organic framework-based route to the in situ encapsulation of metal nanoparticles in N-rich hollow carbon spheres." Chemical Science 7, no. 9 (2016): 6015–20. http://dx.doi.org/10.1039/c6sc01659f.

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Covalent organic frameworks doped with metal cations can be used as novel precursors for the in situ encapsulation of metal NPs into N doped hollow carbon spheres. The integration of the hollow structure, N dopant and ultrafine Pd NPs gives the hybrid nanocomposites advanced catalytic performance.

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Christoforidis, Konstantinos C., and Marcos Fernández-García. "Photoactivity and charge trapping sites in copper and vanadium doped anatase TiO2 nano-materials." Catalysis Science & Technology 6, no. 4 (2016): 1094–105. http://dx.doi.org/10.1039/c5cy00929d.

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Weber, W. J., C. W. Griffin, and J. L. Bates. "Electrical and thermal transport properties of the Y1 − x Mx CrO3 system." Journal of Materials Research 1, no. 5 (1986): 675–84. http://dx.doi.org/10.1557/jmr.1986.0675.

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The effects of substituting divalent metal ions (Mg, Ca, Sr, Ba) for Y in YCrO3 were investigated by electrical conductivity, Seebeck coefficient, and thermal conductivity measurements. The electrical conductivity results were consistent with the hopping-type conduction of a temperature-independent concentration of small polarons, with measured activation energies of 0.18-0.26 eV. The Seebeck coefficient increased nearly linearly with temperature and indicated p-type conductivity. Both electrical conductivity and Seebeck coefficient results show a strong dependence on dopant size (ionic radius

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35

Seetha, Mahalingam, Mariyappan Thambidurai, and D. Mangalaraj. "Investigation on the Effect of Dopant Concentration on the Change in Shape of ITO Nanoparticles - Prepared Using Alcoholysis Method." Advanced Materials Research 678 (March 2013): 168–71. http://dx.doi.org/10.4028/www.scientific.net/amr.678.168.

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A simple room temperature ethanol assisted alcoholysis synthesis was adopted for the preparation of Sn doped indium oxide nanoparticles. Initially, pure indium oxide nanoparticles prepared using the method results in nanocubes, sized about 80 nm was identified using TEM analysis. When the dopant Sn was added at lower concentration the formed cubes were found to contain tiny particles inside nanocubes. As the concentration of Sn increases, it is observed that the particles were no more in cubical shape. For higher concentration of Sn, the formed particles were taken the shape of nanorods which

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36

Kaczmarowski, Amy, Clark Snow, Stephen Foiles, Corbett Battaile, and Dane Morgan. "Dopant binding with vacancies and helium in metal hydrides." Journal of Nuclear Materials 559 (February 2022): 153437. http://dx.doi.org/10.1016/j.jnucmat.2021.153437.

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Kim, Hyung Yoon, Yong Woo Lee, Jae Hyo Park, Hee Jae Chae, and Seung Ki Joo. "Effect of dopant on metal induced lateral crystallization rate." Thin Solid Films 589 (August 2015): 735–40. http://dx.doi.org/10.1016/j.tsf.2015.06.052.

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Rossell, Marta D., Quentin M. Ramasse, Scott D. Findlay, Felix Rechberger, Rolf Erni, and Markus Niederberger. "Direct Imaging of Dopant Clustering in Metal–Oxide Nanoparticles." ACS Nano 6, no. 8 (2012): 7077–83. http://dx.doi.org/10.1021/nn3021212.

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Fischer, Sergej, Hauke Ingolf Kremer, Birger Berghoff, Tobias Maß, Thomas Taubner, and Joachim Knoch. "Dopant-free complementary metal oxide silicon field effect transistors." physica status solidi (a) 213, no. 6 (2016): 1494–99. http://dx.doi.org/10.1002/pssa.201532998.

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Zukuls, Anzelms, Raivis Eglītis, Tanel Käämbre, et al. "Permanent photodoping of plasmonic gallium-ZnO nanocrystals." Nanoscale 12, no. 12 (2020): 6624–29. http://dx.doi.org/10.1039/d0nr01005g.

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The concentration of delocalized electrons in plasmonic metal oxide nanocrystals can be increased permanently by photodoping because the electron compensation becoming the dominant compensation mechanism for the aliovalent donor dopant.

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Hsiao, Ta Ching, Shen Tsao, Sergey Nagalyuk, and Evgeny Mokhov. "Characterization of Second-Phase Inclusion in Silicon Carbide Powders." Materials Science Forum 821-823 (June 2015): 100–103. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.100.

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A specific transition metal is used as a dopant element in silicon carbide powders to create the compensation effect. According to ab-initio simulation, vanadium, chromium, and manganese-induced compensation decrease the lifetime of the acceptor carrier and cause higher resistance when boron is the main impurity. Since the silicon carbide lattice has low solubility, excess metal precipitates on the surface of powders, particularly on the grain boundaries. The compositions of matrix and precipitation in the powders reveal obvious differences between the two areas. The X-ray diffraction (XRD) pa

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Tanisha, Tanshia Tahreen, Orchi Hassan, and Md Kawsar Alam. "Doping-induced performance optimization in monolayer WS₂ memristor: reduced variability and contact resistance." RSC Advances 15, no. 32 (2025): 26052–64. https://doi.org/10.1039/d5ra02473k.

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Metal doping in monolayer WS2 induces strong dopant–vacancy interactions and improves tunneling at the Au electrode–WS2 interface, highlighting its potential to reduce variability and contact resistance in WS2-based memristors.

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Aras, Mehmet, Sümeyra Güler-Kılıç, and Çetin Kılıç. "Enhancement of the magnetic anisotropy in single semiconductor nanowires via surface doping and adatom deposition." Nanotechnology 33, no. 20 (2022): 205202. http://dx.doi.org/10.1088/1361-6528/ac50f0.

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Abstract The magnetic anisotropy of single semiconductor (ZnO and GaN) nanowires incorporating both a transition metal (Co and Mn, respectively) as a substitutional surface dopant and a heavy metal (Au, Bi, or Pt) adatom is studied by performing density-functional supercell calculations with the Hubbard U correction. It is found that a substantial enhancement in the magnetic anisotropy energy is obtained through the deposition of Bi; the deposition of Au and Pt leads to significant variation in other magnetic properties, but not in the magnetic anisotropy energy. An analysis within a band desc

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KHERA, EJAZ AHMAD, HAFEEZ ULLAH, MUHAMMAD IMRAN, HASSAN ALGADI, FAYYAZ HUSSAIN, and RANA MUHAMMAD ARIF KHALIL. "THE FIRST PRINCIPLE STUDY OF COMPARISON OF DIVALENT AND TRIVALENT IMPURITY IN RRAM DEVICES USING GGA+U." Surface Review and Letters 28, no. 06 (2021): 2150039. http://dx.doi.org/10.1142/s0218625x21500396.

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Resistive switching (RS) performances had prodigious attention due to their auspicious potential for data storage. Oxide-based devices with metal insulator metal (MIM) structure are more valuable for RS applications. In this study, we have studied the effect of divalent (nickel) as well as trivalent (aluminum) dopant without and with oxygen vacancy ([Formula: see text] in hafnia ([Formula: see text]-based resistive random-access memory (RRAM) devices. All calculations are carried out within the full potential linearized augmented plane-wave (FP-LAPW) method based on the WIEN2k code by using ge

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Debernardi, Alberto. "First principles simulations of microscopic mechanisms responsible for the drastic reduction of electrical deactivation defects in Se hyperdoped silicon." Physical Chemistry Chemical Physics 23, no. 43 (2021): 24699–710. http://dx.doi.org/10.1039/d1cp02899e.

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By first principles simulations of Se hyperdoped silicon we explain the drastic reduction of electrical deactivation defects when the dopant population approaches the critical concentration at which the insulator-to-metal transition occurs.

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46

Cha, Yoo Lim, Sang-Jin Lee, and Young Soo Yoon. "Synthesis of Mn-, Ni-Doped LiAlO2 Matrix for Molten Carbonate Fuel Cell." Journal of Nanoscience and Nanotechnology 20, no. 9 (2020): 5583–87. http://dx.doi.org/10.1166/jnn.2020.17624.

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The phase stability of electrolyte matrix was improved by metal dopant materials which are Ni and Mn. The Ni-, Mn-doped LiAlO2 and dopant-free LiAlO2 were prepared by the mechanochemical process (MCP). The effects of dopant material, molar ratio and type of precursor were investigated after heat treatment at 700 and 800 °C. As a results, the Mn-doped LiAlO2 prevents phase transition even at higher operating temperature. Also, the stability was increased when Mn4+ ion was adapted as a precursor source than Mn3+ ion and the minimum Mn content to maintain the α-phase after heat treatment at 800 °

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47

Dzujah, Diyan Unmu, Abdul-Muizz Pradipto, Rahmat Hidayat, and Kohji Nakamura. "Modification of plasmonic properties in several transition metal-doped graphene studied by the first principles method." RSC Advances 13, no. 2 (2023): 1446–54. http://dx.doi.org/10.1039/d2ra06446d.

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Doping graphene with a single transition metal atom results in bandgap opening and partial filling of the mid-gap states, leading to the possibility of plasmon excitation with plasmon frequency depending on the TM dopant.

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48

Whang, Chin Myung, J. G. Kim, and Hae Jin Hwang. "Photocatalytic Properties of the Transition Metal Doped TiO₂ Powder Prepared by Sol-Gel Process." Key Engineering Materials 280-283 (February 2007): 647–50. http://dx.doi.org/10.4028/www.scientific.net/kem.280-283.647.

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Transition metal-doped TiO2 powders as a photocatalyst were prepared by sol-gel process and Sb, Bi and Nb were introduced into them as dopants. The photocatalytic behaviors of the doped TiO2 powder were studied as a function of dopant, doping concentration and preparation conditions. X-ray diffraction, FT-Raman, B.E.T. and scanning electron microscopy were applied for structural and microstructural studies. Optical properties of the doped TiO2 powders were studied by UV-Visible Spectrometer and photocatalytic activity of the doped TiO2 was characterized in terms of the degradation of 1,4-dichl

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Wang, Xin, Xingyue Li, Canbin Ouyang, et al. "Nonporous MOF-derived dopant-free mesoporous carbon as an efficient metal-free electrocatalyst for the oxygen reduction reaction." Journal of Materials Chemistry A 4, no. 24 (2016): 9370–74. http://dx.doi.org/10.1039/c6ta03015g.

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Dopant-/metal-free mesoporous carbon has been prepared from nonporous MOFs, which is highly efficient for the electrocatalytic oxygen reduction reaction (ORR). The excellent ORR activity is attributed to both high specific surface area and mesoporous structure.

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Schipper, Florian, Mudit Dixit, Daniela Kovacheva, et al. "Stabilizing nickel-rich layered cathode materials by a high-charge cation doping strategy: zirconium-doped LiNi0.6Co0.2Mn0.2O2." Journal of Materials Chemistry A 4, no. 41 (2016): 16073–84. http://dx.doi.org/10.1039/c6ta06740a.

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The high charge-state dopant Zr<sup>4+</sup> improves the structural stability and electrochemical behavior of the lithiated transition metal oxide LiNi<sub>0.6</sub>Co<sub>0.2</sub>Mn<sub>0.2</sub>O<sub>2</sub>.

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