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Journal articles on the topic 'Metal-induced gap states'

Author: Grafiati

Published: 4 June 2021

Last updated: 2 February 2022

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1

Kiguchi, Manabu, and Koichiro Saiki. "Metal-induced gap states at insulator/metal interfaces." e-Journal of Surface Science and Nanotechnology 2 (2004): 191–99. http://dx.doi.org/10.1380/ejssnt.2004.191.

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2

Sajjad, Muhammad, Xinbo Yang, Pietro Altermatt, Nirpendra Singh, Udo Schwingenschlögl, and Stefaan De Wolf. "Metal-induced gap states in passivating metal/silicon contacts." Applied Physics Letters 114, no. 7 (February 18, 2019): 071601. http://dx.doi.org/10.1063/1.5066423.

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3

Kiguchi, Manabu, Genki Yoshikawa, Susumu Ikeda, and Koichiro Saiki. "Metal induced gap states at alkali halide/metal interface." Applied Surface Science 237, no. 1-4 (October 2004): 495–98. http://dx.doi.org/10.1016/j.apsusc.2004.06.127.

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4

Betti, M. G., G. Bertoni, V. Corradini, V. De Renzi, and C. Mariani. "Metal-induced gap states at InAs(110) surface." Surface Science 454-456 (May 2000): 539–42. http://dx.doi.org/10.1016/s0039-6028(00)00065-0.

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5

Railkar, T. A., and S. V. Bhoraskar. "Detection of metal induced gap states in silicon." Applied Physics Letters 66, no. 8 (February 20, 1995): 974–75. http://dx.doi.org/10.1063/1.113816.

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6

Kiguchi, M., G. Yoshikawa, K. Saiki, R. Arita, and H. Aoki. "Metal induced gap states at tetratetracontane/Cu interface." Journal de Physique IV (Proceedings) 132 (March 2006): 199–203. http://dx.doi.org/10.1051/jp4:2006132038.

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7

Oncel, N., W. J. van Beek, B. Poelsema, and H. J. W. Zandvliet. "Metal induced gap states on Pt-modified Ge(001) surfaces." New Journal of Physics 9, no. 12 (December 20, 2007): 449. http://dx.doi.org/10.1088/1367-2630/9/12/449.

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8

Stiles, K., A. Kahn, D. Kilday, and G. Margaritondo. "Metal‐induced gap states at the Ag and Au/GaAs interfaces." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 6, no. 3 (May 1988): 1511–14. http://dx.doi.org/10.1116/1.575351.

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9

Gao, Zhengning, Mallik M. R. Hussain, Domenico de Ceglia, Maria A. Vincenti, Andrew Sarangan, Imad Agha, Michael Scalora, Joseph W. Haus, and Parag Banerjee. "Unraveling delocalized electrons in metal induced gap states from second harmonics." Applied Physics Letters 111, no. 16 (October 16, 2017): 161601. http://dx.doi.org/10.1063/1.4996893.

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10

Fung, M. K., S. L. Lai, S. W. Tong, S. N. Bao, C. S. Lee, and S. T. Lee. "Interface gap states of 8-hydroxyquinoline aluminum induced by cesium metal." Chemical Physics Letters 392, no. 1-3 (July 2004): 40–43. http://dx.doi.org/10.1016/j.cplett.2004.05.047.

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11

Aoki, Masaru, Toyohiro Kamada, Keita Sasaki, Shigeru Masuda, and Yoshitada Morikawa. "Chemisorption-induced gap states at organic–metal interfaces: benzenethiol and benzeneselenol on metal surfaces." Physical Chemistry Chemical Physics 14, no. 12 (2012): 4101. http://dx.doi.org/10.1039/c2cp23206e.

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12

Picozzi, S., A. Continenza, G. Satta, S. Massidda, and A. J. Freeman. "Metal-induced gap states and Schottky barrier heights at nonreactive GaN/noble-metal interfaces." Physical Review B 61, no. 24 (June 15, 2000): 16736–42. http://dx.doi.org/10.1103/physrevb.61.16736.

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13

Park, Jun-Ho, Seong-Jun Yang, Chang-Won Choi, Si-Young Choi, and Cheol-Joo Kim. "Pristine Graphene Insertion at the Metal/Semiconductor Interface to Minimize Metal-Induced Gap States." ACS Applied Materials & Interfaces 13, no. 19 (May 5, 2021): 22828–35. http://dx.doi.org/10.1021/acsami.1c03299.

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14

Gutierrez, R., G. Fagas, K. Richter, F. Grossmann, and R. Schmidt. "Conductance of a molecular junction mediated by unconventional metal-induced gap states." Europhysics Letters (EPL) 62, no. 1 (April 2003): 90–96. http://dx.doi.org/10.1209/epl/i2003-00366-3.

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15

Sasaki, Shogo, and Takashi Nakayama. "Defect distribution and Schottky barrier at metal/Ge interfaces: Role of metal-induced gap states." Japanese Journal of Applied Physics 55, no. 11 (October 3, 2016): 111302. http://dx.doi.org/10.7567/jjap.55.111302.

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16

Linz, R. "Cesium on GaP(110) surfaces: A confirmation of the metal-induced gap states-plus-defects model." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 11, no. 4 (July 1993): 1591. http://dx.doi.org/10.1116/1.586975.

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17

Kim, Taikyu, Jeong-Kyu Kim, Baekeun Yoo, Hongwei Xu, Sungyeon Yim, Seung-Hwan Kim, Hyun-Yong Yu, and Jae Kyeong Jeong. "Improved switching characteristics of p-type tin monoxide field-effect transistors through Schottky energy barrier engineering." Journal of Materials Chemistry C 8, no. 1 (2020): 201–8. http://dx.doi.org/10.1039/c9tc04345d.

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Metal–interlayer–semiconductor contact reduces metal-induced gap states, mitigating Fermi-level pinning at metal/semiconductor interface. Here, switching property of p-type SnO FET is enhanced by increasing electron Schottky barrier at off-state.

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18

Nishimura, Tomonori, Koji Kita, and Akira Toriumi. "Evidence for strong Fermi-level pinning due to metal-induced gap states at metal/germanium interface." Applied Physics Letters 91, no. 12 (September 17, 2007): 123123. http://dx.doi.org/10.1063/1.2789701.

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19

Muller, D. A., D. A. Shashkov, R. Benedek, L. H. Yang, J. Silcox, and D. N. Seidman. "Atomic Scale Observations of Metal-Induced Gap States at{222}MgO/Cu Interfaces." Physical Review Letters 80, no. 21 (May 25, 1998): 4741–44. http://dx.doi.org/10.1103/physrevlett.80.4741.

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20

OVCHINNIKOV, S. G. "THE NATURE OF THE IN-GAP STATES IN WEAKLY DOPED La2−x Srx CuO4." Modern Physics Letters B 06, no. 30 (December 30, 1992): 1927–33. http://dx.doi.org/10.1142/s0217984992001630.

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A single-particle density of states is calculated in the strong electron correlation limit of the generalized multiband Hubbard model by exact diagonalization for CuO4 cluster. Several in-gap states are induced by hole doping that are mixtures of Cu d(x2−y2) and b1 O states and Cu d(z2), O a1 states and nonbonding O states. The Fermi level depends on the hole concentration nonmonotonically. The critical concentration of the insulator-metal transition of the Anderson type is estimated.

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21

Wager, John F., and John Robertson. "Metal-induced gap states modeling of metal-Ge contacts with and without a silicon nitride ultrathin interfacial layer." Journal of Applied Physics 109, no. 9 (May 2011): 094501. http://dx.doi.org/10.1063/1.3581159.

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22

Mönch, W. "Barrier Heights of Metal Contacts on H-Terminated Diamond: Explanation by Metal-Induced Gap States and Interface Dipoles." Europhysics Letters (EPL) 27, no. 6 (August 20, 1994): 479–84. http://dx.doi.org/10.1209/0295-5075/27/6/012.

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23

Maeda, Keiji, and Eiji Kitahara. "Metal-induced gap states model of nonideal Au/Si Schottky barrier with low defect density." Applied Surface Science 130-132 (June 1998): 925–29. http://dx.doi.org/10.1016/s0169-4332(98)00178-0.

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24

Schattschneider, Peter, and Michael Stoger-Pollach. "Observation of Metal Induced Gap States at a-Si/Al and c-Si/Al Interfaces." Microscopy and Microanalysis 10, S02 (August 2004): 856–57. http://dx.doi.org/10.1017/s1431927604884423.

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25

Dong, Shihui, Bin Li, Xuefeng Cui, Shijing Tan, and Bing Wang. "Photoresponses of Supported Au Single Atoms on TiO2(110) through the Metal-Induced Gap States." Journal of Physical Chemistry Letters 10, no. 16 (July 31, 2019): 4683–91. http://dx.doi.org/10.1021/acs.jpclett.9b01527.

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26

Mönch, Winfried. "Barrier heights of real Schottky contacts explained by metal-induced gap states and lateral inhomogeneities." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 17, no. 4 (1999): 1867. http://dx.doi.org/10.1116/1.590839.

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27

Ruppalt, Laura B, and Joseph W Lyding. "Metal-Induced Gap States at a Carbon-Nanotube Intramolecular Heterojunction Observed by Scanning Tunneling Microscopy." Small 3, no. 2 (February 5, 2007): 280–84. http://dx.doi.org/10.1002/smll.200600343.

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28

Mönch, Winfried. "On the explanation of the barrier heights of InP Schottky contacts by metal-induced gap states." Applied Physics Letters 93, no. 17 (October 27, 2008): 172118. http://dx.doi.org/10.1063/1.3009283.

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29

Harrison, Walter A. "Effects of matching conditions in effective-mass theory: Quantum wells, transmission, and metal-induced gap states." Journal of Applied Physics 110, no. 11 (December 2011): 113715. http://dx.doi.org/10.1063/1.3665716.

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30

Aguado-Puente, Pablo, and Javier Junquera. "First-principles study of metal-induced gap states in metal/oxide interfaces and their relation with the complex band structure." MRS Communications 3, no. 4 (November 8, 2013): 191–97. http://dx.doi.org/10.1557/mrc.2013.43.

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31

Ryabchuk, Vladimir. "Photophysical processes related to photoadsorption and photocatalysis on wide band gap solids: A review." International Journal of Photoenergy 6, no. 3 (2004): 95–113. http://dx.doi.org/10.1155/s1110662x04000145.

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During the last two decades, various pathways describing photoexcitation of small molecules’ surface reactions at the wide band gap metal oxides and halides (Eg>3eV) have been recognized. Photogeneration of excitons and free charge carriers may occur in bands of: i) fundamental absorption; ii) extrinsic and intrinsic defect absorption, including those related to surface states; and iii) in UV-induced color centers. Considerable red shifts relative to the fundamental absorption threshold of wide band gap solids have been observed for the spectral limits of surface photoreactions induced in extrinsic absorption bands. This allows thinking about the wide band gap solids as a potential competitors for the relatively narrow band gap photocatalysts. This review discusses the concept of surface photoadsorption (photocatalytic) center while differentiating active and inactive states of the center. Electronically excited defect, surface self-trapped or bound exciton, and the surface defect with trapped photo carrier are considered as the active states of photoadsorption (photocatalytic) centers of different types. The decay pathway of active state determines the lifetime of a photocatalytic center, and in this connection the Langmuir-Hinshelwood kinetic approach is discussed.

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32

Yang, H. Y., Q. F. Li, and Z. H. Liu. "Electronic and optical properties of 2H-perovskite related tantalum/niobium oxides." Modern Physics Letters B 31, no. 34 (December 6, 2017): 1750323. http://dx.doi.org/10.1142/s0217984917503237.

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Quasi-one-dimensional oxides [Formula: see text] (A = Ba, Sr; [Formula: see text] = Na, Li and B = Ta, Nb) have been synthesized and found to display efficient photoluminescence. Their electronic and optical properties are calculated by using first-principles calculations. The modified Becke–Johnson exchange potential has been used to obtain accurate band gap. Our results reveal that alkali metal and alkaline-earth metal ions have very small contribution to the states around Fermi level, and for these compounds, the top valence bands and the conduction band bottom are dominated by O-2p and Nb/Ta-d states, respectively. All of these compounds have indirect band gap, with valence band maximum at K point and conduction band minimum at [Formula: see text] point. Optical absorption spectrum is characterized by two prominent peaks. The lower energy peak originates from electron transitions between Ta/Nb-[Formula: see text] and O-2p states, while the higher energy peak is determined by electron transitions between Ta/Nb-[Formula: see text] and O-2p. Despite the one-dimensional feature of the lattice structure, the electronic band structure and optical properties show three-dimensional character. We find that the band gap and optical absorption threshold are considerably larger than the energy of excitation light in the luminescence measurement. This indicates the important role of the in-gap states, which may be induced by the impurity or vacancy.

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33

Pantisano, Luigi, V. V. Afanas’ev, S. Cimino, C. Adelmann, L. Goux, Y. Y. Chen, J. A. Kittl, D. Wouters, and M. Jurczak. "Towards barrier height modulation in HfO2/TiN by oxygen scavenging – Dielectric defects or metal induced gap states?" Microelectronic Engineering 88, no. 7 (July 2011): 1251–54. http://dx.doi.org/10.1016/j.mee.2011.03.057.

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34

Kim, Gwang-Sik, Seung-Hwan Kim, June Park, Kyu Hyun Han, Jiyoung Kim, and Hyun-Yong Yu. "Schottky Barrier Height Engineering for Electrical Contacts of Multilayered MoS2Transistors with Reduction of Metal-Induced Gap States." ACS Nano 12, no. 6 (May 31, 2018): 6292–300. http://dx.doi.org/10.1021/acsnano.8b03331.

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35

Galatage, R. V., D. M. Zhernokletov, H. Dong, B. Brennan, C. L. Hinkle, R. M. Wallace, and E. M. Vogel. "Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states." Journal of Applied Physics 116, no. 1 (July 7, 2014): 014504. http://dx.doi.org/10.1063/1.4886715.

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36

Van Dyck, Colin, Victor Geskin, and Jérôme Cornil. "Fermi Level Pinning and Orbital Polarization Effects in Molecular Junctions: The Role of Metal Induced Gap States." Advanced Functional Materials 24, no. 39 (August 5, 2014): 6154–65. http://dx.doi.org/10.1002/adfm.201400809.

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37

Khanna, Shaweta, Arti Noor, Man Singh Tyagi, and Sonnathi Neeleshwar. "Interface States and Barrier Heights on Metal/4H-SiC Interfaces." Materials Science Forum 615-617 (March 2009): 427–30. http://dx.doi.org/10.4028/www.scientific.net/msf.615-617.427.

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Available data on Schottky barrier heights on silicon and carbon rich faces of 4H-SiC have been carefully analyzed to investigate the mechanism of barrier formation on these surfaces. As in case of 3C and 6H-SiC, the barrier heights depend strongly upon method of surface preparation with a considerable scatter in the barrier height for a given metal-semiconductor system. However, for each metal the barrier height depends on the metal work function and strong pinning of the Fermi level has not been observed. The slopes of the linear relation between the barrier heights and metal work functions varies over a wide range from 0.2 to about 0.75 indicating that the density of interface states depends strongly on the method of surface preparation. By a careful examination of the data on barrier heights we could identify a set of nearly ideal interfaces in which the barrier heights vary linearly with metal work function approaching almost to the Schottky limit. The density of interface states for these interfaces is estimated to lie between 4.671012 to 2.631012 states/ cm2 eV on the silicon rich surface and about three times higher on the carbon rich faces. We also observed that on these ideal interfaces the density of interface states was almost independent of metal indicating that the metal induced gap states (MIGS) play no role in determining the barrier heights in metal-4H-SiC Schottky barriers.

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38

Zhao, Xiuwen, Bin Qiu, Guichao Hu, Weiwei Yue, Junfeng Ren, and Xiaobo Yuan. "Spin Polarization Properties of Pentagonal PdSe2 Induced by 3D Transition-Metal Doping: First-Principles Calculations." Materials 11, no. 11 (November 21, 2018): 2339. http://dx.doi.org/10.3390/ma11112339.

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The electronic structure and spin polarization properties of pentagonal structure PdSe2 doped with transition metal atoms are studied through first- principles calculations. The theoretical investigations show that the band gap of the PdSe2 monolayer decreases after introducing Cr, Mn, Fe and Co dopants. The projected densities of states show that p-d orbital couplings between the transition metal atoms and PdSe2 generate new spin nondegenerate states near the Fermi level which make the system spin polarized. The calculated magnetic moments, spin density distributions and charge transfer of the systems suggest that the spin polarization in Cr-doped PdSe2 will be the biggest. Our work shows that the properties of PdSe2 can be modified by doping transition metal atoms, which provides opportunity for the applications of PdSe2 in electronics and spintronics.

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39

Castán, Helena, Salvador Dueñas, and Juan Barbolla. "Experimental Verification of Direct Tunneling Assisted Electron Capture of Disordered-Induced Gap States in Metal-Insulator-Semiconductor Structures." Japanese Journal of Applied Physics 41, Part 2, No. 11A (November 1, 2002): L1215—L1217. http://dx.doi.org/10.1143/jjap.41.l1215.

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40

Kiguchi, Manabu, Masao Katayama, Genki Yoshikawa, Koichiro Saiki, and Atushi Koma. "Metal induced gap states at LiCl–Cu(0 0 1) interface studied by X-ray absorption fine structure." Applied Surface Science 212-213 (May 2003): 701–4. http://dx.doi.org/10.1016/s0169-4332(03)00077-1.

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41

Wang, Zhenyu, Yoshinori Okada, Jared O’Neal, Wenwen Zhou, Daniel Walkup, Chetan Dhital, Tom Hogan, et al. "Disorder induced power-law gaps in an insulator–metal Mott transition." Proceedings of the National Academy of Sciences 115, no. 44 (October 15, 2018): 11198–202. http://dx.doi.org/10.1073/pnas.1808056115.

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A correlated material in the vicinity of an insulator–metal transition (IMT) exhibits rich phenomenology and a variety of interesting phases. A common avenue to induce IMTs in Mott insulators is doping, which inevitably leads to disorder. While disorder is well known to create electronic inhomogeneity, recent theoretical studies have indicated that it may play an unexpected and much more profound role in controlling the properties of Mott systems. Theory predicts that disorder might play a role in driving a Mott insulator across an IMT, with the emergent metallic state hosting a power-law suppression of the density of states (with exponent close to 1; V-shaped gap) centered at the Fermi energy. Such V-shaped gaps have been observed in Mott systems, but their origins are as-yet unknown. To investigate this, we use scanning tunneling microscopy and spectroscopy to study isovalent Ru substitutions in Sr3(Ir1-xRux)2O7 (0 ≤ x ≤ 0.5) which drive the system into an antiferromagnetic, metallic state. Our experiments reveal that many core features of the IMT, such as power-law density of states, pinning of the Fermi energy with increasing disorder, and persistence of antiferromagnetism, can be understood as universal features of a disordered Mott system near an IMT and suggest that V-shaped gaps may be an inevitable consequence of disorder in doped Mott insulators.

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42

ANSARINO, MASOUD, BAHRAM ABEDI RAVAN, and YADOLLAH AHMADIZADEH. "FIRST-PRINCIPLES CALCULATION OF MAGNETO-ELECTRONIC STRUCTURE OF MOLECULE-FERROMAGNET HYBRID TUNNEL JUNCTIONS." Modern Physics Letters B 27, no. 28 (October 24, 2013): 1350205. http://dx.doi.org/10.1142/s0217984913502059.

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In this paper, using first-principles calculations the electronic and magnetic structure of trans- and cis-polyacetylene based magnetic tunnel junctions is investigated. Energy minimization calculations are performed to obtain the equilibrium bonding length at the metal/polymer interfaces. Magnetic proximity-induced spin polarization across the polymeric chains is calculated and it is shown that irrespective of the parallel or anti-parallel magnetic configuration of the electrodes the carbon atoms attaching the Fe electrodes get oppositely polarized. Local density of states calculations reveal that, as a result of being attached to the ferromagnetic leads, states are induced in the energy gap region of molecule's px and py orbitals which infers their contribution in electronic transmission of the device.

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43

ZAZZA, COSTANTINO, SIMONE MELONI, and AMEDEO PALMA. "STRUCTURAL AND ELECTRONIC PROPERTIES OF METAL-DOPED ORGANIC SEMICONDUCTORS." Modern Physics Letters B 22, no. 17 (July 10, 2008): 1609–31. http://dx.doi.org/10.1142/s0217984908016388.

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Interaction of metal atoms with organic thin films is a fundamental issue in the optimization performances of novel devices. The computational investigations, based on density functional theory, reveal that a realistic description of the reactive processes is obtained when the organic thin film is modeled by its crystallographic structure. In this case, the metal atoms can react with multiple organic molecules present in the solid forming complexes where they are bound both to O atoms and to aromatic C atoms of the molecules. Calculated band gap states, induced by chemical reaction upon deposition, reproduce quite well the measured density of states as a function of the metal concentration in the solid. Simulated core level shift spectra for N (1s), O (1s) and Al (2p) in doped systems are in good agreement with experimental spectra and the electronic structure analysis provides a microscopic description of reaction processes. Interestingly, K atoms in PTCDA solid are ionically bound to anhydride O atoms and are able to form quasi mono-dimensional chain along the stack direction of the organic material.

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44

Lu, Zhan Sheng, Zong Xian Yang, and Kersti Hermansson. "The Adsorption Properties of Cu and Ni on the Ceria(111) Surface." Advanced Materials Research 213 (February 2011): 166–71. http://dx.doi.org/10.4028/www.scientific.net/amr.213.166.

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First-principles electronic structures calculations of the adsorption properties of Cu and Ni on the ceria(111) surface are presented. The adatoms (Cu, Ni) are adsorbed strongly at the hollow site on the CeO2(111) support. Metal induced gap states (MIGS) appear in the O2p-Ce4f gaps and the Cu and Ni adatoms are oxidized to Cu+ and Ni+ mainly by their next nearest neighbor Ce ion, which experiences a conversion of Ce4+→Ce3+. The bonding mechanisms for the Cu-ceria(111) and Ni-ceria(111) systems are proposed.

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45

Waddill, G. D. "Ag and Co cluster deposition on GaAs(110): Fermi level pinning in the absence of metal-induced gap states and defects." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 7, no. 4 (July 1989): 950. http://dx.doi.org/10.1116/1.584586.

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46

Liu, Yuanyue, Paul Stradins, and Su-Huai Wei. "Van der Waals metal-semiconductor junction: Weak Fermi level pinning enables effective tuning of Schottky barrier." Science Advances 2, no. 4 (April 2016): e1600069. http://dx.doi.org/10.1126/sciadv.1600069.

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Two-dimensional (2D) semiconductors have shown great potential for electronic and optoelectronic applications. However, their development is limited by a large Schottky barrier (SB) at the metal-semiconductor junction (MSJ), which is difficult to tune by using conventional metals because of the effect of strong Fermi level pinning (FLP). We show that this problem can be overcome by using 2D metals, which are bounded with 2D semiconductors through van der Waals (vdW) interactions. This success relies on a weak FLP at the vdW MSJ, which is attributed to the suppression of metal-induced gap states. Consequently, the SB becomes tunable and can vanish with proper 2D metals (for example, H-NbS2). This work not only offers new insights into the fundamental properties of heterojunctions but also uncovers the great potential of 2D metals for device applications.

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47

Matys, M., S. Kaneki, K. Nishiguchi, B. Adamowicz, and T. Hashizume. "Disorder induced gap states as a cause of threshold voltage instabilities in Al2O3/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors." Journal of Applied Physics 122, no. 22 (December 14, 2017): 224504. http://dx.doi.org/10.1063/1.5000497.

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48

Shyamala, Ramakrishnappa, and Lakshmipathi Naik Gomathi Devi. "Surface plasmon resonance effect of Ag metallized SnO 2 particles: Exploration of metal induced gap states and characteristic properties of Ohmic junction." Surface and Interface Analysis 52, no. 6 (February 3, 2020): 374–85. http://dx.doi.org/10.1002/sia.6745.

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49

LIU, C. P. "ZEEMAN EFFECT ON THE ELECTRONIC STRUCTURE OF CARBON NANOTORI IN A STRONG MAGNETIC FIELD." International Journal of Modern Physics B 22, no. 27 (October 30, 2008): 4845–52. http://dx.doi.org/10.1142/s0217979208049030.

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We mainly study the Zeeman effect on electronic structure of carbon nanotori in the presence of magnetic field (B) perpendicular to the tori's plane. As a function of magnetic flux (ϕ), the energy gap (Eg) and density of states (DOS) near the Fermi level are obtained in the case of with and without considering the Zeeman effect. Without spin-B interaction, the ϕ-dependent electronic structure would exhibit the periodical Aharonov–Bohm (AB) oscillation. A magnetic-field-induced semiconductor-metal transition is indicated in the variation of energy gap and DOS of armchair tori. The Zeeman effect on electronic structure is notable at relatively large ϕ (~100ϕ0, with ϕ0 = h/e), e.g., more phase transition points may appear in the Eg - B dependence for armchair tori, and the destruction of periodical AB oscillation is distinct due to the Zeeman effect. These results may be observed by scanning tunneling spectroscopy measurement.

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Yin, Zongyou, Moshe Tordjman, Youngtack Lee, Alon Vardi, Rafi Kalish, and Jesús A. del Alamo. "Enhanced transport in transistor by tuning transition-metal oxide electronic states interfaced with diamond." Science Advances 4, no. 9 (September 2018): eaau0480. http://dx.doi.org/10.1126/sciadv.aau0480.

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Abstract:

High electron affinity transition-metal oxides (TMOs) have gained a central role in two-dimensional (2D) electronics by enabling unprecedented surface charge doping efficiency in numerous exotic 2D solid-state semiconductors. Among them, diamond-based 2D electronics are entering a new era by using TMOs as surface acceptors instead of previous molecular-like unstable acceptors. Similarly, surface-doped diamond with TMOs has recently yielded record sheet hole concentrations (2 × 1014 cm−2) and launched the quest for its implementation in microelectronic devices. Regrettably, field-effect transistor operation based on this surface doping has been so far disappointing due to fundamental material obstacles such as (i) carrier scattering induced by nonhomogeneous morphology of TMO surface acceptor layer, (ii) stoichiometry changes caused by typical transistor fabrication process, and (iii) carrier transport loss due to electronic band energy misalignment. This work proposes and demonstrates a general strategy that synergistically surmounts these three barriers by developing an atomic layer deposition of a hydrogenated MoO3 layer as a novel efficient surface charge acceptor for transistors. It shows high surface uniformity, enhanced immunity to harsh fabrication conditions, and benefits from tunable electronic gap states for improving carrier transfer at interfaces. These breakthroughs permit crucial integration of TMO surface doping into transistor fabrication flows and allow outperforming electronic devices to be reached.

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