Books on the topic 'Metal oxide semiconductor field-effect transistor Metal oxide semiconductors, Complementary'

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1

Saijets, Jan. MOSFET RF characterization using bulk and SOI CMOS technologies. [Espoo, Finland]: VTT Technical Research Centre of Finland, 2007.

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2

Institute of Electrical and Electronics Engineers., ed. CMOS circuit design, layout, and simulation. 2nd ed. New York: IEEE Press, 2005.

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3

1960-, Li Harry W., and Boyce David E. 1940-, eds. CMOS circuit design, layout, and simulation. New York: IEEE Press, 1997.

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4

Baker, R. Jacob. CMOS circuit design, layout, and simulation. New York: IEEE Press, 1998.

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5

Institute of Electrical and Electronics Engineers., ed. CMOS circuit design, layout, and simulation. 2nd ed. Piscataway, NJ: IEEE Press, 2008.

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6

Foty, D. MOSFET modeling with SPICE: Principles and practice. Upper Saddle River, NJ: Prentice Hall PTR, 1997.

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7

1960-, Li Harry W., Boyce David E. 1940-, and Institute of Electrical and Electronics Engineers, eds. CMOS circuit design, layout, and simulation. New Delhi: Prentice-Hall of India, 2004.

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8

CMOS: Circuit design, layout, and simulation. 3rd ed. Piscataway, NJ: IEEE Press, 2010.

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9

El-Khatib, Ziad. Distributed CMOS bidirectional amplifiers: Broadbanding and linearization techniques. New York: Springer, 2012.

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10

Hossein, Sarbishaei, and Sachdev Manoj, eds. ESD protection device and circuit design for advanced CMOS technologies. [Dordrecht]: Springer, 2008.

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11

Madrid, Philip E. Device design and process window analysis of a deep submicron CMOS VLSI technology. Reading, Mass: Addison-Wesley, 1992.

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12

Youssef, Ahmed A. Nanometer CMOS RFICs for mobile TV applications. Dordrecht: Springer, 2010.

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13

Tsividis, Yannis. Operation and modeling of the MOS transistor. 3rd ed. New York: Oxford University Press, 2010.

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14

Tsividis, Yannis. Operation and modeling of the MOS transistor. 3rd ed. New York: Oxford University Press, 2010.

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15

Tsividis, Yannis. Operation and modeling of the MOS transistor. 3rd ed. New York: Oxford University Press, 2011.

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16

Charge-based MOS transistor modelling: The EKV model for low-power and RF IC design. Chichester, UK: John Wiley & Sons, 2006.

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17

C, Sansen Willy M., and Maes H. E, eds. Matching properties of deep sub-micron MOS transistors. New York: Springer, 2005.

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18

Tsividis, Yannis. Operation and modeling of the MOS transistor. 2nd ed. New York: Oxford University Press, 1999.

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19

Tsividis, Yannis. Operation and modeling of the MOS transistor. 2nd ed. Boston: WCB/McGraw-Hill, 1999.

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20

Tsividis, Yannis. Operation and modeling of the MOS transistor. New York: McGraw-Hill, 1987.

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21

Operation and modeling of the MOS transistor. 2nd ed. Boston: WCB/McGraw-Hill, 1998.

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22

Amara, Amara, and Rozeau Olivier, eds. Planar double-gate transistor: From technology to circuit. [Dordrecht?]: Springer, 2009.

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23

Amara, Amara, and Rozeau Olivier, eds. Planar double-gate transistor: From technology to circuit. [Dordrecht?]: Springer, 2009.

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24

Qiu, Xiangping. MOSFET-only predictive track and hold circuit. 1997.

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25

Qiu, Xiangping. MOSFET-only predictive track and hold circuit. 1997.

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26

Zhou, Jianjun J. CMOS low noise amplifier design utilizing monolithic transformers. 1998.

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27

Haartman, Martin v., and Mikael Östling. Low-Frequency Noise in Advanced MOS Devices (Analog Circuits and Signal Processing). Springer, 2007.

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28

Lee, Jonghwan. Comprehensive compact noise modeling of nanoscale CMOS devices. 2003.

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29

Baker, R. Jacob. CMOS Circuit Design, Layout, and Simulation. Wiley-IEEE Press, 2004.

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30

Youssef, Ahmed A., and James Haslett. Nanometer CMOS RFICs for Mobile TV Applications. Springer, 2010.

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31

(Editor), Wladyslaw Grabinski, Bart Nauwelaers (Editor), and Dominique Schreurs (Editor), eds. Transistor Level Modeling for Analog/RF IC Design. Springer, 2006.

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32

Operation and Modeling of the MOS Transistor (The Oxford Series in Electrical and Computer Engineering). 3rd ed. Oxford University Press, 2008.

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33

Tsividis, Yannis. Operation and Modeling of the MOS Transistor. Oxford University Press, USA, 2003.

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34

Paul, Douglas J. Si/SiGe heterostructures in nanoelectronics. Edited by A. V. Narlikar and Y. Y. Fu. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780199533060.013.5.

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This article describes the applications of Si/SiGe heterostructures in nanoelectronics. Silicon-germanium is now a mature field with heterojunction bipolar transistors (HBTs) and complementary metal oxide semiconductors (CMOS) products in the market place. In the research field there are many areas where Si/SiGe heterostructures are being used to bandgap engineer nanoelectronic devices resulting in significant improvements in device performance. A number of these areas have good potential for eventually reaching production, while thereare also many that allow fundamental research on the physics of materials anddevices. This article begins with an overview of the growth of silicon-germanium alloys, followed by a discussion of the effect of strain on the band structure and properties of Si/SiGe devices. It then considers two mainstream nanoelectronic applications of Si/SiGe heterostructures, namely HBTs and CMOS. It also looks at resonant tunnelling diodes and SiGe quantum cascade emitters.
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35

Tsividis, Yannis, and Colin McAndrew. Operation and Modeling of the MOS Transistor: Special MOOC Edition. Oxford University Press, 2013.

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