Log in

Relevant bibliographies by topics / Metal oxide semiconductor field-effect transistor Metal oxide semiconductors / Journal articles

To see the other types of publications on this topic, follow the link: Metal oxide semiconductor field-effect transistor Metal oxide semiconductors.

Journal articles on the topic 'Metal oxide semiconductor field-effect transistor Metal oxide semiconductors'

Author: Grafiati

Published: 4 June 2021

Last updated: 1 February 2022

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the top 50 journal articles for your research on the topic 'Metal oxide semiconductor field-effect transistor Metal oxide semiconductors.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Browse journal articles on a wide variety of disciplines and organise your bibliography correctly.

1

John Chelliah, Cyril R. A., and Rajesh Swaminathan. "Current trends in changing the channel in MOSFETs by III–V semiconducting nanostructures." Nanotechnology Reviews 6, no. 6 (November 27, 2017): 613–23. http://dx.doi.org/10.1515/ntrev-2017-0155.

Full text

Abstract:

AbstractThe quest for high device density in advanced technology nodes makes strain engineering increasingly difficult in the last few decades. The mechanical strain and performance gain has also started to diminish due to aggressive transistor pitch scaling. In order to continue Moore’s law of scaling, it is necessary to find an effective way to enhance carrier transport in scaled dimensions. In this regard, the use of alternative nanomaterials that have superior transport properties for metal-oxide-semiconductor field-effect transistor (MOSFET) channel would be advantageous. Because of the extraordinary electron transport properties of certain III–V compound semiconductors, III–Vs are considered a promising candidate as a channel material for future channel metal-oxide-semiconductor transistors and complementary metal-oxide-semiconductor devices. In this review, the importance of the III–V semiconductor nanostructured channel in MOSFET is highlighted with a proposed III–V GaN nanostructured channel (thickness of 10 nm); Al2O3 dielectric gate oxide based MOSFET is reported with a very low threshold voltage of 0.1 V and faster switching of the device.

APA, Harvard, Vancouver, ISO, and other styles

2

Kumar, Prateek, Maneesha Gupta, Naveen Kumar, Marlon D. Cruz, Hemant Singh, Ishan, and Kartik Anand. "Performance Evaluation of Silicon-Transition Metal Dichalcogenides Heterostructure Based Steep Subthreshold Slope-Field Effect Transistor Using Non-Equilibrium Green’s Function." Sensor Letters 18, no. 6 (June 1, 2020): 468–76. http://dx.doi.org/10.1166/sl.2020.4236.

Full text

Abstract:

With technology invading nanometer regime performance of the Metal-Oxide-semiconductor Field Effect Transistor is largely hampered by short channel effects. Most of the simulation tools available do not include short channel effects and quantum effects in the analysis which raises doubt on their authenticity. Although researchers have tried to provide an alternative in the form of tunnel field-effect transistors, junction-less transistors, etc. but they all suffer from their own set of problems. Therefore, Metal-Oxide-Semiconductor Field-Effect Transistor remains the backbone of the VLSI industry. This work is dedicated to the design and study of the novel tub-type Metal-Oxide-Semiconductor Field-Effect Transistor. For simulation Non-Equilibrium Green’s Function is used as the primary model of simulation. The device is analyzed under different physical variations like work function, permittivity, and interface trap charge. This work uses Silicon-Molybdenum Disulphide heterojunction and Silicon-Tungsten Disulphide heterojunction as channel material. Results for both the heterojunctions are compared. It was analyzed that Silicon-Molybdenum Disulphide heterojunction provides better linearity and Silicon-Tungsten Disulphide heterojunction provides better switching speed than conventional Metal-Oxide-Semiconductor Field-Effect Transistor.

APA, Harvard, Vancouver, ISO, and other styles

3

Natori, Kenji. "Ballistic metal‐oxide‐semiconductor field effect transistor." Journal of Applied Physics 76, no. 8 (October 15, 1994): 4879–90. http://dx.doi.org/10.1063/1.357263.

Full text

APA, Harvard, Vancouver, ISO, and other styles

4

Duane, Michael. "Metal–oxide–semiconductor field-effect transistor junction requirements." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 16, no. 1 (January 1998): 306. http://dx.doi.org/10.1116/1.589800.

Full text

APA, Harvard, Vancouver, ISO, and other styles

5

Okyay, Ali K., Abhijit J. Pethe, Duygu Kuzum, Salman Latif, David A. Miller, and Krishna C. Saraswat. "SiGe optoelectronic metal-oxide semiconductor field-effect transistor." Optics Letters 32, no. 14 (July 5, 2007): 2022. http://dx.doi.org/10.1364/ol.32.002022.

Full text

APA, Harvard, Vancouver, ISO, and other styles

6

Johnson, J. W., B. Luo, F. Ren, B. P. Gila, W. Krishnamoorthy, C. R. Abernathy, S. J. Pearton, et al. "Gd2O3/GaN metal-oxide-semiconductor field-effect transistor." Applied Physics Letters 77, no. 20 (November 13, 2000): 3230–32. http://dx.doi.org/10.1063/1.1326041.

Full text

APA, Harvard, Vancouver, ISO, and other styles

7

Palma, Fabrizio. "Self-Mixing Model of Terahertz Rectification in a Metal Oxide Semiconductor Capacitance." Electronics 9, no. 3 (March 14, 2020): 479. http://dx.doi.org/10.3390/electronics9030479.

Full text

Abstract:

Metal oxide semiconductor (MOS) capacitance within field effect transistors are of great interest in terahertz (THz) imaging, as they permit high-sensitivity, high-resolution detection of chemical species and images using integrated circuit technology. High-frequency detection based on MOS technology has long been justified using a mechanism described by the plasma wave detection theory. The present study introduces a new interpretation of this effect based on the self-mixing process that occurs in the field effect depletion region, rather than that within the channel of the transistor. The proposed model formulates the THz modulation mechanisms of the charge in the potential barrier below the oxide based on the hydrodynamic semiconductor equations solved for the small-signal approximation. This approach explains the occurrence of the self-mixing process, the detection capability of the structure and, in particular, its frequency dependence. The dependence of the rectified voltage on the bias gate voltage, substrate doping, and frequency is derived, offering a new explanation for several previous experimental results. Harmonic balance simulations are presented and compared with the model results, fully validating the model’s implementation. Thus, the proposed model substantially improves the current understanding of THz rectification in semiconductors and provides new tools for the design of detectors.

APA, Harvard, Vancouver, ISO, and other styles

8

Palma, Fabrizio. "New Insight on Terahertz Rectification in a Metal–Oxide–Semiconductor Field-Effect Transistor Structure." Electronics 9, no. 7 (July 3, 2020): 1089. http://dx.doi.org/10.3390/electronics9071089.

Full text

Abstract:

The use of a metal–oxide–semiconductor field-effect transistor (MOS-FET) permits the rectification of electromagnetic radiation by employing integrated circuit technology. However, obtaining a high-efficiency rectification device requires the assessment of a physical model capable of providing a qualitative and quantitative explanation of the processes involved. For a long time, high-frequency detection based on MOS technology was explained using plasma wave detection theory. In this paper, we review the rectification mechanism in light of high-frequency numerical simulations, showing features never examined until now. The results achieved substantially change our understanding of terahertz (THz) rectification in semiconductors, and can be interpreted by the model based on the self-mixing process in the device substrate, providing a new and essential tool for designing this type of detector.

APA, Harvard, Vancouver, ISO, and other styles

9

Marcoux, J., J. Orchard-Webb, and J. F. Currie. "Complementary metal oxide semiconductor-compatible junction field-effect transistor characterization." Canadian Journal of Physics 65, no. 8 (August 1, 1987): 982–86. http://dx.doi.org/10.1139/p87-156.

Full text

Abstract:

We report on the fabrication and electrical characterization of a vertical junction-gate field-effect transistor (JFET) that is compatible with all complementary metal oxide semiconductor (CMOS) technologies. It can be used as a buried load for an enhancement n-channel metal oxide semiconductor field-effect transistor (n-MOSFET), replacing the p-MOSFET within the standard CMOS inverter configuration and resulting in a 40% net area economy in standard cells. To be entirely CMOS process compatible, this JFET device differs from others in the literature in that dopant concentrations in the n substrates (1014) and in the p wells (1015) are substantially lower. For integrated-circuit applications, one seeks to use the JFET with the smallest area to minimize parasitic capacitances and to maximize switching speeds. However, at these concentration levels, the dc current–voltage characteristics depend critically on the lateral dimension of the JFET's square channel. Above 10 μm, the characteristics are pentode-like and similar to those of a classic MOSFET. Below 10 μm, the channel is naturally pinched-off, and for reverse gate bias, the small JFETs are triode-like. There is also a nonreciprocity between the source and the drain when the source-to-drain voltage polarity is changed, which is due to the distance between the channel and the electrode collecting the carriers. When its gate is forward-biased, the small JFETs behave as bipolar transistors. Depending on source-to-drain voltage polarities, I–V characteristics exhibit saturation effects caused by base-widening phenomena at the JFET's drain contact.

APA, Harvard, Vancouver, ISO, and other styles

10

Peng, J. W., N. Singh, G. Q. Lo, M. Bosman, C. M. Ng, and S. J. Lee. "Germanium Nanowire Metal–Oxide–Semiconductor Field-Effect Transistor Fabricated by Complementary-Metal–Oxide–Semiconductor-Compatible Process." IEEE Transactions on Electron Devices 58, no. 1 (January 2011): 74–79. http://dx.doi.org/10.1109/ted.2010.2088125.

Full text

APA, Harvard, Vancouver, ISO, and other styles

11

Chang, Wen-Teng, Hsu-Jung Hsu, and Po-Heng Pao. "Vertical Field Emission Air-Channel Diodes and Transistors." Micromachines 10, no. 12 (December 6, 2019): 858. http://dx.doi.org/10.3390/mi10120858.

Full text

Abstract:

Vacuum channel transistors are potential candidates for low-loss and high-speed electronic devices beyond complementary metal-oxide-semiconductors (CMOS). When the nanoscale transport distance is smaller than the mean free path (MFP) in atmospheric pressure, a transistor can work in air owing to the immunity of carrier collision. The nature of a vacuum channel allows devices to function in a high-temperature radiation environment. This research intended to investigate gate location in a vertical vacuum channel transistor. The influence of scattering under different ambient pressure levels was evaluated using a transport distance of about 60 nm, around the range of MFP in air. The finite element model suggests that gate electrodes should be near emitters in vertical vacuum channel transistors because the electrodes exhibit high-drive currents and low-subthreshold swings. The particle trajectory model indicates that collected electron flow (electric current) performs like a typical metal oxide semiconductor field effect-transistor (MOSFET), and that gate voltage plays a role in enhancing emission electrons. The results of the measurement on vertical diodes show that current and voltage under reduced pressure and filled with CO2 are different from those under atmospheric pressure. This result implies that this design can be used for gas and pressure sensing.

APA, Harvard, Vancouver, ISO, and other styles

12

Khan, M. A., X. Hu, G. Sumin, A. Lunev, J. Yang, R. Gaska, and M. S. Shur. "AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor." IEEE Electron Device Letters 21, no. 2 (February 2000): 63–65. http://dx.doi.org/10.1109/55.821668.

Full text

APA, Harvard, Vancouver, ISO, and other styles

13

Islam, Md Sherajul, Sakib M. Muhtadi, Md Tanvir Hasan, Ashraful G. Bhuiyan, Md Rafiqul Islam, A. Hashimoto, and A. Yamamoto. "AlInN/InN metal oxide semiconductor heterostructure field effect transistor." physica status solidi (c) 7, no. 7-8 (June 10, 2010): 1983–87. http://dx.doi.org/10.1002/pssc.200983597.

Full text

APA, Harvard, Vancouver, ISO, and other styles

14

Yin, Zongyou, Moshe Tordjman, Alon Vardi, Rafi Kalish, and Jesus A. del Alamo. "A Diamond:H/WO3 Metal–Oxide–Semiconductor Field-Effect Transistor." IEEE Electron Device Letters 39, no. 4 (April 2018): 540–43. http://dx.doi.org/10.1109/led.2018.2808463.

Full text

APA, Harvard, Vancouver, ISO, and other styles

15

Imai, Jim, and Ruben Flores. "Low‐temperature metal‐oxide‐semiconductor field‐effect transistor preamplifier." Review of Scientific Instruments 64, no. 10 (October 1993): 3024–25. http://dx.doi.org/10.1063/1.1144353.

Full text

APA, Harvard, Vancouver, ISO, and other styles

16

Kim, Il Hwan, Jong Duk Lee, Chang Woo Oh, Jae Woo Park, and Byung Gook Park. "Metal–oxide–semiconductor field effect transistor-controlled field emission display." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 21, no. 1 (2003): 519. http://dx.doi.org/10.1116/1.1524134.

Full text

APA, Harvard, Vancouver, ISO, and other styles

17

Weng, Wu-Te, Yao-Jen Lee, Horng-Chih Lin, and Tiao-Yuan Huang. "Plasma-Induced Damage on the Reliability of Hf-Based High-k/Dual Metal-Gates Complementary Metal Oxide Semiconductor Technology." International Journal of Plasma Science and Engineering 2009 (December 14, 2009): 1–10. http://dx.doi.org/10.1155/2009/308949.

Full text

Abstract:

This study examines the effects of plasma-induced damage (PID) on Hf-based high-k/dual metal-gates transistors processed with advanced complementary metal-oxide-semiconductor (CMOS) technology. In addition to the gate dielectric degradations, this study demonstrates that thinning the gate dielectric reduces the impact of damage on transistor reliability including the positive bias temperature instability (PBTI) of n-channel metal-oxide-semiconductor field-effect transistors (NMOSFETs) and the negative bias temperature instability (NBTI) of p-channel MOSFETs. This study shows that high-k/metal-gate transistors are more robust against PID than conventional SiO2/poly-gate transistors with similar physical thickness. Finally this study proposes a model that successfully explains the observed experimental trends in the presence of PID for high-k/metal-gate CMOS technology.

APA, Harvard, Vancouver, ISO, and other styles

18

Kaneko, Kentaro, Yoshito Ito, Takayuki Uchida, and Shizuo Fujita. "Growth and metal–oxide–semiconductor field-effect transistors of corundum-structured alpha indium oxide semiconductors." Applied Physics Express 8, no. 9 (September 1, 2015): 095503. http://dx.doi.org/10.7567/apex.8.095503.

Full text

APA, Harvard, Vancouver, ISO, and other styles

19

Sun, Y., S. E. Thompson, and T. Nishida. "Physics of strain effects in semiconductors and metal-oxide-semiconductor field-effect transistors." Journal of Applied Physics 101, no. 10 (May 15, 2007): 104503. http://dx.doi.org/10.1063/1.2730561.

Full text

APA, Harvard, Vancouver, ISO, and other styles

20

Li-Ning, Zhang, He Jin, Zhou Wang, Chen Lin, and Xu Yi-Wen. "An oxide/silicon core/shell nanowire metal-oxide semiconductor field-effect transistor." Chinese Physics B 19, no. 4 (April 2010): 047306. http://dx.doi.org/10.1088/1674-1056/19/4/047306.

Full text

APA, Harvard, Vancouver, ISO, and other styles

21

Uraoka, Yukiharu, Hiroyuki Honda, Takashi Fuyuki, Takaoki Sasaki, and Mitsuo Yasuhira. "Hot Carrier Effect in UltraThin Gate Oxide Metal Oxide Semiconductor Field Effect Transistor." Japanese Journal of Applied Physics 44, no. 8 (August 5, 2005): 5889–92. http://dx.doi.org/10.1143/jjap.44.5889.

Full text

APA, Harvard, Vancouver, ISO, and other styles

22

Zhu, Yan, Bei Li, Jianlin Liu, G. F. Liu, and J. A. Yarmoff. "TiSi2∕Si heteronanocrystal metal-oxide-semiconductor-field-effect-transistor memory." Applied Physics Letters 89, no. 23 (December 4, 2006): 233113. http://dx.doi.org/10.1063/1.2402232.

Full text

APA, Harvard, Vancouver, ISO, and other styles

23

Dedman, C. J., E. H. Roberts, S. T. Gibson, and B. R. Lewis. "Fast 1 kV metal-oxide-semiconductor field-effect transistor switch." Review of Scientific Instruments 72, no. 9 (September 2001): 3718–20. http://dx.doi.org/10.1063/1.1389488.

Full text

APA, Harvard, Vancouver, ISO, and other styles

24

Srisonphan, Siwapon, Yun Suk Jung, and Hong Koo Kim. "Metal–oxide–semiconductor field-effect transistor with a vacuum channel." Nature Nanotechnology 7, no. 8 (July 1, 2012): 504–8. http://dx.doi.org/10.1038/nnano.2012.107.

Full text

APA, Harvard, Vancouver, ISO, and other styles

25

Continetti, R. E., D. R. Cyr, and D. M. Neumark. "Fast 8 kV metal–oxide semiconductor field‐effect transistor switch." Review of Scientific Instruments 63, no. 2 (February 1992): 1840–41. http://dx.doi.org/10.1063/1.1143294.

Full text

APA, Harvard, Vancouver, ISO, and other styles

26

Ward, M. J., F. M. Odeh, and D. S. Cohen. "Asymptotic Methods for Metal Oxide Semiconductor Field Effect Transistor Modeling." SIAM Journal on Applied Mathematics 50, no. 4 (June 1990): 1099–125. http://dx.doi.org/10.1137/0150066.

Full text

APA, Harvard, Vancouver, ISO, and other styles

27

Yakimov, A. I., A. V. Dvurechenskii, V. V. Kirienko, and A. I. Nikiforov. "Ge/Si quantum-dot metal–oxide–semiconductor field-effect transistor." Applied Physics Letters 80, no. 25 (June 24, 2002): 4783–85. http://dx.doi.org/10.1063/1.1488688.

Full text

APA, Harvard, Vancouver, ISO, and other styles

28

Tao, Meng, Robert W. Wallace, C. Rinn Cleavelin, and Rick L. Wise. "The Chalkboard: Silicon Complementary Metal-Oxide-Semiconductor Field-Effect Transistor." Electrochemical Society Interface 14, no. 2 (June 1, 2005): 26–27. http://dx.doi.org/10.1149/2.f03052if.

Full text

APA, Harvard, Vancouver, ISO, and other styles

29

Lee, Choong Hun, Choochon Lee, K. J. Chang, Sung Chul Kim, and Jin Jang. "Hydrogenation effect in ann‐channel metal‐oxide‐semiconductor field‐effect transistor." Applied Physics Letters 58, no. 2 (January 14, 1991): 134–36. http://dx.doi.org/10.1063/1.104951.

Full text

APA, Harvard, Vancouver, ISO, and other styles

30

Yang, Jianan, John P. Denton, and Gerold W. Neudeck. "Edge transistor elimination in oxide trench isolated N-channel metal–oxide–semiconductor field effect transistors." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 19, no. 2 (2001): 327. http://dx.doi.org/10.1116/1.1358854.

Full text

APA, Harvard, Vancouver, ISO, and other styles

31

Jae Baik, Seung, Jae Hyung Choi, Jeong Yong Lee, and Koeng Su Lim. "Metal-oxide-semiconductor field effect transistor using ‘oxidizedμc-Si/ultrathin oxide’ gate structure." Superlattices and Microstructures 28, no. 5-6 (November 2000): 477–83. http://dx.doi.org/10.1006/spmi.2000.0951.

Full text

APA, Harvard, Vancouver, ISO, and other styles

32

Kyaw, Wut Hmone, and May Nwe Myint Aye. "Simulation of Energy Bands for Metal and Semiconductor Junction." Journal La Multiapp 1, no. 2 (June 21, 2020): 7–13. http://dx.doi.org/10.37899/journallamultiapp.v1i2.107.

Full text

Abstract:

This paper presents the metal-semiconductor band structure analysis for metal-oxide semiconductor field effect transistor (MOSFET). The energy bands were observed at metal-semiconductor and semiconductor-metal junctions. The simulation results show energy variations by using gallium-nitride (GaN) material. Gallium nitride based MOSFETs have some special material properties and wide band-gap. From the energy band, the condition of contact potential, conduction and valence band-edges can be analyzed. The computerized simulation results for getting the band layers are investigated with MATLAB programming language.

APA, Harvard, Vancouver, ISO, and other styles

33

Атамуратова, З. А., А. Юсупов, Б. О. Халикбердиев, and А. Э. Атамуратов. "Аномальное поведение боковой C-V-характеристики МНОП-транзистора со встроенным локальным зарядом в нитридном слое." Журнал технической физики 89, no. 7 (2019): 1067. http://dx.doi.org/10.21883/jtf.2019.07.47801.319-18.

Full text

Abstract:

C-V dependence of lateral source-base transition of metal-nitride-oxide-semiconductor field effect transistor with localized nitride trapped charge is simulated. Localizing the charge induce anomalous jumping or recession of the capacitance at defined applied voltage. The change of capacitance is connected with redistribution of carriers at semiconductor surface induced by charge trapping. The anomalous behaviour of the capacitance can be used at detecting the localized charge trapped in the dielectric layer of field effect transistors.

APA, Harvard, Vancouver, ISO, and other styles

34

Sun Peng, Du Lei, Chen Wen-Hao, He Liang, and Zhang Xiao-Fang. "A radiation degradation model of metal-oxide-semiconductor field effect transistor." Acta Physica Sinica 61, no. 10 (2012): 107803. http://dx.doi.org/10.7498/aps.61.107803.

Full text

APA, Harvard, Vancouver, ISO, and other styles

35

Mandelis, Andreas, Andrew Williams, and Edwin K. M. Siu. "Photothermal wave imaging of metal‐oxide‐semiconductor field‐effect transistor structures." Journal of Applied Physics 63, no. 1 (January 1988): 92–98. http://dx.doi.org/10.1063/1.340468.

Full text

APA, Harvard, Vancouver, ISO, and other styles

36

Song, Seok-Ho, Hyun-Ho Yang, Chang-Hoon Han, Seung-Deok Ko, Seok-Hee Lee, and Jun-Bo Yoon. "Metal-oxide-semiconductor field effect transistor humidity sensor using surface conductance." Applied Physics Letters 100, no. 10 (March 5, 2012): 101603. http://dx.doi.org/10.1063/1.3691936.

Full text

APA, Harvard, Vancouver, ISO, and other styles

37

Fang, Weifu, and Ellis Cumberbatch. "Inverse Problems for Metal Oxide Semiconductor Field-Effect Transistor Contact Resistivity." SIAM Journal on Applied Mathematics 52, no. 3 (June 1992): 699–709. http://dx.doi.org/10.1137/0152039.

Full text

APA, Harvard, Vancouver, ISO, and other styles

38

Gilbert, M. J., and D. K. Ferry. "Indium arsenide quantum wire trigate metal oxide semiconductor field effect transistor." Journal of Applied Physics 99, no. 5 (March 2006): 054503. http://dx.doi.org/10.1063/1.2179135.

Full text

APA, Harvard, Vancouver, ISO, and other styles

39

Zhou, Huimei, Bei Li, Zheng Yang, Ning Zhan, Dong Yan, Roger K. Lake, and Jianlin Liu. "$\hbox{TiSi}_{2}$ Nanocrystal Metal Oxide Semiconductor Field Effect Transistor Memory." IEEE Transactions on Nanotechnology 10, no. 3 (May 2011): 499–505. http://dx.doi.org/10.1109/tnano.2010.2049271.

Full text

APA, Harvard, Vancouver, ISO, and other styles

40

Pérez-Tomás, A., M. Placidi, X. Perpiñà, A. Constant, P. Godignon, X. Jordà, P. Brosselard, and J. Millán. "GaN metal-oxide-semiconductor field-effect transistor inversion channel mobility modeling." Journal of Applied Physics 105, no. 11 (June 2009): 114510. http://dx.doi.org/10.1063/1.3140614.

Full text

APA, Harvard, Vancouver, ISO, and other styles

41

Tsai, Yu-Yang, Chun-Yu Kuo, Bo-Chang Li, Po-Wen Chiu, and Klaus Y. J. Hsu. "A Graphene/Polycrystalline Silicon Photodiode and Its Integration in a Photodiode–Oxide–Semiconductor Field Effect Transistor." Micromachines 11, no. 6 (June 17, 2020): 596. http://dx.doi.org/10.3390/mi11060596.

Full text

Abstract:

In recent years, the characteristics of the graphene/crystalline silicon junction have been frequently discussed in the literature, but study of the graphene/polycrystalline silicon junction and its potential applications is hardly found. The present work reports the observation of the electrical and optoelectronic characteristics of a graphene/polycrystalline silicon junction and explores one possible usage of the junction. The current–voltage curve of the junction was measured to show the typical exponential behavior that can be seen in a forward biased diode, and the photovoltage of the junction showed a logarithmic dependence on light intensity. A new phototransistor named the “photodiode–oxide–semiconductor field effect transistor (PDOSFET)” was further proposed and verified in this work. In the PDOSFET, a graphene/polycrystalline silicon photodiode was directly merged on top of the gate oxide of a conventional metal–oxide–semiconductor field effect transistor (MOSFET). The magnitude of the channel current of this phototransistor showed a logarithmic dependence on the illumination level. It is shown in this work that the PDOSFET facilitates a better pixel design in a complementary metal–oxide–semiconductor (CMOS) image sensor, especially beneficial for high dynamic range (HDR) image detection.

APA, Harvard, Vancouver, ISO, and other styles

42

Arns, R. G. "The other transistor: early history of the metal-oxide semiconductor field-effect transistor." Engineering Science & Education Journal 7, no. 5 (October 1, 1998): 233–40. http://dx.doi.org/10.1049/esej:19980509.

Full text

APA, Harvard, Vancouver, ISO, and other styles

43

Liang, Hsiao-Bin, Yi-Hsun Tsou, Yo-Sheng Lin, and Chi-Chen Chen. "Uniformly Distributed Wideband Metal–Oxide–Semiconductor Field-Effect Transistor Model for Complementary Metal–Oxide–Semiconductor Radio-Frequency Integrated Cirsuits Applications." Japanese Journal of Applied Physics 47, no. 2 (February 15, 2008): 807–13. http://dx.doi.org/10.1143/jjap.47.807.

Full text

APA, Harvard, Vancouver, ISO, and other styles

44

Wang Xin, Lu Wu, Wu Xue, Ma Wu-Ying, Cui Jiang-Wei, Liu Mo-Han, and Jiang Ke. "Radiation effect of deep-submicron metal-oxide-semiconductor field-effect transistor and parasitic transistor." Acta Physica Sinica 63, no. 22 (2014): 226101. http://dx.doi.org/10.7498/aps.63.226101.

Full text

APA, Harvard, Vancouver, ISO, and other styles

45

Bennett, Brian R., Mario G. Ancona, and J. Brad Boos. "Compound Semiconductors for Low-Power p-Channel Field-Effect Transistors." MRS Bulletin 34, no. 7 (July 2009): 530–36. http://dx.doi.org/10.1557/mrs2009.141.

Full text

Abstract:

AbstractResearch in n-channel field-effect transistors based upon III–V compound semiconductors has been very productive over the last 30 years, with successful applications in a variety of high-speed analog circuits. For digital applications, complementary circuits are desirable to minimize static power consumption. Hence, p-channel transistors are also needed. Unfortunately, hole mobilities are generally much lower than electron mobilities for III–V compounds. This article reviews the recent work to enhance hole mobilities in antimonide-based quantum wells. Epitaxial heterostructures have been grown with the channel material in 1–2% compressive strain. The strain modifies the valence band structure, resulting in hole mobilities as high as 1500 cm2/Vs. The next steps toward an ultra-low-power complementary metal oxide semiconductor technology will include development of a compatible insulator technology and integration of n- and p-channel transistors.

APA, Harvard, Vancouver, ISO, and other styles

46

Chen, Yu, Yung C. Liang, and Ganesh S. Samudra. "Theoretical Analyses of Oxide-Bypassed Superjunction Power Metal Oxide Semiconductor Field Effect Transistor Devices." Japanese Journal of Applied Physics 44, no. 2 (February 8, 2005): 847–56. http://dx.doi.org/10.1143/jjap.44.847.

Full text

APA, Harvard, Vancouver, ISO, and other styles

47

Eujune Lee, Dong-Il Moon, Ji-Hwan Yang, Keong Su Lim, and Yang-Kyu Choi. "Transparent Zinc Oxide Gate Metal–Oxide–Semiconductor Field-Effect Transistor for High-Responsivity Photodetector." IEEE Electron Device Letters 30, no. 5 (May 2009): 493–95. http://dx.doi.org/10.1109/led.2009.2016765.

Full text

APA, Harvard, Vancouver, ISO, and other styles

48

Rotter, T., D. Mistele, J. Stemmer, M. Seyboth, V. Schwegler, S. Paprotta, F. Fedler, et al. "First AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor based on photoanodic oxide." Electronics Letters 37, no. 11 (2001): 715. http://dx.doi.org/10.1049/el:20010484.

Full text

APA, Harvard, Vancouver, ISO, and other styles

49

Toumazou, Christofer, Tan Sri Lim Kok Thay, and Pantelis Georgiou. "A new era of semiconductor genetics using ion-sensitive field-effect transistors: the gene-sensitive integrated cell." Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 372, no. 2012 (March 28, 2014): 20130112. http://dx.doi.org/10.1098/rsta.2013.0112.

Full text

Abstract:

Semiconductor genetics is now disrupting the field of healthcare owing to the rapid parallelization and scaling of DNA sensing using ion-sensitive field-effect transistors (ISFETs) fabricated using commercial complementary metal -oxide semiconductor technology. The enabling concept of DNA reaction monitoring introduced by Toumazou has made this a reality and we are now seeing relentless scaling with Moore's law ultimately achieving the $100 genome. In this paper, we present the next evolution of this technology through the creation of the gene-sensitive integrated cell (GSIC) for label-free real-time analysis based on ISFETs. This device is derived from the traditional metal-oxide semiconductor field-effect transistor (MOSFET) and has electrical performance identical to that of a MOSFET in a standard semiconductor process, yet is capable of incorporating DNA reaction chemistries for applications in single nucleotide polymorphism microarrays and DNA sequencing. Just as application-specific integrated circuits, which are developed in much the same way, have shaped our consumer electronics industry and modern communications and memory technology, so, too, do GSICs based on a single underlying technology principle have the capacity to transform the life science and healthcare industries.

APA, Harvard, Vancouver, ISO, and other styles

50

Soref, Richard. "Applications of Silicon-Based Optoelectronics." MRS Bulletin 23, no. 4 (April 1998): 20–24. http://dx.doi.org/10.1557/s0883769400030220.

Full text

Abstract:

Silicon-based optoelectronics is a diversified technology that has grown steadily but not exponentially over the past decade. Some applications—such as smart-pixel signal processing and chip-to-chip optical interconnects—have enjoyed impressive growth, whereas other applications have remained quiescent. A few important applications such as optical diagnosis of leaky metal-oxide-semiconductor-field-effect-transistor circuits, have appeared suddenly. Over the years, research and development has unveiled some unique and significant aspects of Si-based optoelectronics. The main limitation of this technology is the lack of practical silicon light sources—Si lasers and efficient Si light-emitting devices (LEDs)—though investigators are “getting close” to the LED.Silicon-based optoelectronics refers to the integration of photonic and electronic components on a Si chip or wafer. The photonics adds value to the electronics, and the electronics offers low-cost mass-production benefits. The electronics includes complementary-metal-oxide semiconductors (CMOS), very large-scale integration (VLSI), bipolar CMOS, SiGe/Si heterojunction bipolar transistors, and heterostructure field-effect transistors. In this discussion, we will use a loose definition of optoelectronics that includes photonic and optoelectronic integrated circuits (PICs and OEICs), Si optical benches, and micro-optoelectromechanical (MOEM) platforms. Optoelectronic chips and platforms are subsystems of computer systems, communication networks, etc. Silicon substrates feature a superior native oxide, in addition to excellent thermal, mechanical, and economic properties. Silicon wafers “shine” as substrates for PICs and OEICs.

APA, Harvard, Vancouver, ISO, and other styles

We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!