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Relevant bibliographies by topics / Metal-oxide semiconductor field-effect transistor (MOSEFET)

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Academic literature on the topic 'Metal-oxide semiconductor field-effect transistor (MOSEFET)'

Author: Grafiati

Published: 11 December 2022

Last updated: 26 January 2023

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Journal articles on the topic "Metal-oxide semiconductor field-effect transistor (MOSEFET)"

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Na, Jaeyeop, and Kwangsoo Kim. "A Novel 4H-SiC Double Trench MOSFET with Built-In MOS Channel Diode for Improved Switching Performance." Electronics 12, no. 1 (2022): 92. http://dx.doi.org/10.3390/electronics12010092.

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This study proposed a novel 4H-SiC double trench metal-oxide-semiconductor field-effect-transistor (DTMCD-MOSFET) structure with a built-in MOS channel diode. Further, its characteristics were analyzed using TCAD simulation. The DTMCD-MOSFET comprised active and dummy gates that were divided horizontally; the channel diode operated through the dummy gate and the p-base and N+ source regions at the bottom of the dummy gate. Because the bult-in channel diode was positioned at the bottom, the DTMCD-MOSEFT minimized static deterioration. Despite having a 5.2% higher specific on-resistance (Ron-sp) than a double-trench MOSFET (DT-MOSFET), the DTMCD-MOSFET exhibited a significantly superior body diode and switching properties. In comparison to the DT-MOSFET, its turn-on voltage (VF) and reverse recovery charge (Qrr) were decreased by 27.2 and 30.2%, respectively, and the parasitic gate-drain capacitance (Crss) was improved by 89.4%. Thus, compared with the DT-MOSFET, the total switching energy loss (Etot) was reduced by 41.4%.

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Natori, Kenji. "Ballistic metal‐oxide‐semiconductor field effect transistor." Journal of Applied Physics 76, no. 8 (1994): 4879–90. http://dx.doi.org/10.1063/1.357263.

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Duane, Michael. "Metal–oxide–semiconductor field-effect transistor junction requirements." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 16, no. 1 (1998): 306. http://dx.doi.org/10.1116/1.589800.

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Okyay, Ali K., Abhijit J. Pethe, Duygu Kuzum, Salman Latif, David A. Miller, and Krishna C. Saraswat. "SiGe optoelectronic metal-oxide semiconductor field-effect transistor." Optics Letters 32, no. 14 (2007): 2022. http://dx.doi.org/10.1364/ol.32.002022.

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Johnson, J. W., B. Luo, F. Ren, et al. "Gd2O3/GaN metal-oxide-semiconductor field-effect transistor." Applied Physics Letters 77, no. 20 (2000): 3230–32. http://dx.doi.org/10.1063/1.1326041.

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Kim, Il Hwan, Jong Duk Lee, Chang Woo Oh, Jae Woo Park, and Byung Gook Park. "Metal–oxide–semiconductor field effect transistor-controlled field emission display." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 21, no. 1 (2003): 519. http://dx.doi.org/10.1116/1.1524134.

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Imai, Jim, and Ruben Flores. "Low‐temperature metal‐oxide‐semiconductor field‐effect transistor preamplifier." Review of Scientific Instruments 64, no. 10 (1993): 3024–25. http://dx.doi.org/10.1063/1.1144353.

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Khan, M. A., X. Hu, G. Sumin, et al. "AlGaN/GaN metal oxide semiconductor heterostructure field effect transistor." IEEE Electron Device Letters 21, no. 2 (2000): 63–65. http://dx.doi.org/10.1109/55.821668.

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Yin, Zongyou, Moshe Tordjman, Alon Vardi, Rafi Kalish, and Jesus A. del Alamo. "A Diamond:H/WO3 Metal–Oxide–Semiconductor Field-Effect Transistor." IEEE Electron Device Letters 39, no. 4 (2018): 540–43. http://dx.doi.org/10.1109/led.2018.2808463.

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Islam, Md Sherajul, Sakib M. Muhtadi, Md Tanvir Hasan, et al. "AlInN/InN metal oxide semiconductor heterostructure field effect transistor." physica status solidi (c) 7, no. 7-8 (2010): 1983–87. http://dx.doi.org/10.1002/pssc.200983597.

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Dissertations / Theses on the topic "Metal-oxide semiconductor field-effect transistor (MOSEFET)"

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Shi, Xuejie. "Compact modeling of double-gate metal-oxide-semiconductor field-effect transistor /." View abstract or full-text, 2006. http://library.ust.hk/cgi/db/thesis.pl?ELEC%202006%20SHI.

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Sun, Shan. "Power metal-oxide-semiconductor field-effect transistor with strained silicon and silicon germanium channel." Doctoral diss., University of Central Florida, 2010. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/4631.

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With the development of modern electronics, the demand for high quality power supplies has become more urgent than ever. For power MOSFETs, maintaining the trend of reducing on-state resistance (conduction loss) without sacrificing switching performance is a severe challenge. In this work, our research is focused on implementing strained silicon and silicon germanium in power MOFETs to enhance carrier mobility, thus achieving the goal of reducing specific on-state resistance. We propose an N-channel super-lattice trench MOSFET, a P-channel sidewall channel trench MOSFET and P-Channel LDMOS with strained Si/SiGe channels. A set of fabrication processes highly compatible with conventional Si technology is developed to fabricate proposed devices. The mobility enhancement is observed to be 20%, 40% and 35% respectively for N-channel, P-channel trench MOSFET and LDMOS respectively and the on-state resistance is reduced by 10%, 20% and 22% without sacrificing other device performance parameters.<br>ID: 030423174; System requirements: World Wide Web browser and PDF reader.; Mode of access: World Wide Web.; Thesis (Ph.D.)--University of Central Florida, 2010.; Includes bibliographical references (p. 85-91).<br>Ph.D.<br>Doctorate<br>Department of Electrical Engineering<br>Engineering and Computer Science

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Khan, Shamsul Arefin. "Deep sub-micron MOS transistor design and manufacturing sensitivity analysis /." Digital version accessible at:, 1999. http://wwwlib.umi.com/cr/utexas/main.

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Bjeletich, Peter John. "Characterization of heteroepitaxial silicon germanium carbon layers for metal oxide semiconductor field effect transistor (MOSFET) applications /." For electronic version search Digital dissertations database. Restricted to UC campuses. Access is free to UC campus dissertations, 2004. http://uclibs.org/PID/11984.

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Thesis (Ph. D.)--University of California, Davis, 2005.<br>Degree granted in Electrical Engineering. Dissertation completed in 2004; degree granted in 2005. Also available via the World Wide Web. (Restricted to UC campuses)

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Ma, Wei. "Linearity Analysis of Single and Double-Gate Silicon-On-Insulator Metal-Oxide-Semiconductor-Field-Effect-Transistor." Ohio University / OhioLINK, 2004. http://www.ohiolink.edu/etd/view.cgi?ohiou1103138153.

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Chen, Qiang. "Scaling limits and opportunities of double-gate MOSFETS." Diss., Georgia Institute of Technology, 2003. http://hdl.handle.net/1853/15011.

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Pratapgarhwala, Mustansir M. "Characterization of Transistor Matching in Silicon-Germanium Heterojunction Bipolar Transistors." Thesis, Georgia Institute of Technology, 2005. http://hdl.handle.net/1853/7536.

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Transistor mismatch is a crucial design issue in high precision analog circuits, and is investigated here for the first time in SiGe HBTs. The goal of this work is to study the effects of mismatch under extreme conditions including radiation, high temperature, and low temperature. One portion of this work reports collector current mismatch data as a function of emitter geometry both before and after 63 MeV proton exposure for first-generation SiGe HBTs with a peak cut-off frequency of 60 GHz. However, minimal changes in device-to-device mismatch after radiation exposure were experienced. Another part of the study involved measuring similar devices at different temperatures ranging from 298K to 377K. As a general trend, it was observed that device-to-device mismatch improved with increasing temperature.

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Turner, Gary Chandler. "Zinc Oxide MESFET Transistors." Thesis, University of Canterbury. Electrical and Computer Engineering, 2009. http://hdl.handle.net/10092/3439.

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Zinc oxide is a familiar ingredient in common household items including sunscreen and medicines. It is, however, also a semiconductor material. As such, it is possible to use zinc oxide (ZnO) to make semiconductor devices such as diodes and transistors. Being transparent to visible light in its crystalline form means that it has the potential to be the starting material for so-called 'transparent electronics', where the entire device is transparent. Transparent transistors have the potential to improve the performance of the electronics currently used in LCD display screens. Most common semiconductor devices require the material to be selectively doped with specific impurities that can make the material into one of two electronically distinct types – p- or n-type. Unfortunately, making reliable p-type ZnO has been elusive to date, despite considerable efforts worldwide. This lack of p-type material has hindered development of transistors based on this material. One alternative is a Schottky junction, which can be used as the active element in a type of transistor known as a metal-semiconductor field effect transistor, MESFET. Schottky junctions are traditionally made from noble metal layers deposited onto semiconductors. Recent work at the Canterbury University has shown that partially oxidised metals may in fact be a better choice, at least to zinc oxide. This thesis describes the development of a fabrication process for metal-semiconductor field effect transistors using a silver oxide gate on epitaxially grown zinc oxide single crystals. Devices were successfully produced and electrically characterised. The measurements show that the technology has significant potential.

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Saluru, Sarat K. "Projection of TaSiOx/In0.53Ga0.47As Tri-gate transistor performance for future Low-Power Electronic Applications." Thesis, Virginia Tech, 2017. http://hdl.handle.net/10919/78028.

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The aggressive scaling of silicon (Si) based complementary metal-oxide-semiconductor (CMOS) transistor over the past 50 years has resulted in an exponential increase in device density, which consequentially has increased computation power rapidly. This has pronounced the necessity to scale the device's supply voltage (VDD) in to order to maintain low-power device operation. However, the scaling of VDD can degrade drive current significantly due to the low carrier mobility of Si. To overcome the key challenges of dimensional and voltage scaling required for low-power electronic operation without degradation of device characteristics, the adoption of alternate channel materials with low bandgap with superior transport properties will play a crucial role to improve the computation ability of the standard integrated circuit (IC). The requirement of high-mobility channel materials allows the industry to harness the potential of III-V semiconductors and germanium. However, the adoption of such high mobility materials as bulk substrates remains cost-prohibitive even today. Hence, another key challenge lies in the heterogeneous integration of epitaxial high-mobility channel materials on the established cost-effective Si platform. Furthermore, dimensional scaling of the device has led to a change in architecture from the conventional planar MOSFET to be modified to a 3-D Tri-gate architecture which provides fully depleted characteristics by increasing the inversion layer area and hence, providing superior electrostatic control of the device channel to address short channel effects such as subthreshold slope (SS) and drain induced barrier lowering (DIBL). The Tri-gate configuration provides a steeper SS effectively reducing leakage current (IOFF), thereby decreasing dynamic power consumption and increasing device performance. Recently, Tantalum silicate (TaSiOx) a high-k dielectric has been shown to exhibit superior interfacial quality on multiple III-V materials. However, there is still ambiguity as to the potential of short-channel devices incorporating alternate channel (III-V) materials which is the basis of this research, to demonstrate the feasibility of future high-mobility n-channel InGaAs material integration on Si for high- speed, low-power, high performance CMOS logic applications.<br>Master of Science

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Zabihi, Sasan. "Flexible high voltage pulsed power supply for plasma applications." Thesis, Queensland University of Technology, 2011. https://eprints.qut.edu.au/48137/1/Sasan_Zabihi_Sheykhrajeh_Thesis.pdf.

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Demands for delivering high instantaneous power in a compressed form (pulse shape) have widely increased during recent decades. The flexible shapes with variable pulse specifications offered by pulsed power have made it a practical and effective supply method for an extensive range of applications. In particular, the release of basic subatomic particles (i.e. electron, proton and neutron) in an atom (ionization process) and the synthesizing of molecules to form ions or other molecules are among those reactions that necessitate large amount of instantaneous power. In addition to the decomposition process, there have recently been requests for pulsed power in other areas such as in the combination of molecules (i.e. fusion, material joining), gessoes radiations (i.e. electron beams, laser, and radar), explosions (i.e. concrete recycling), wastewater, exhausted gas, and material surface treatments. These pulses are widely employed in the silent discharge process in all types of materials (including gas, fluid and solid); in some cases, to form the plasma and consequently accelerate the associated process. Due to this fast growing demand for pulsed power in industrial and environmental applications, the exigency of having more efficient and flexible pulse modulators is now receiving greater consideration. Sensitive applications, such as plasma fusion and laser guns also require more precisely produced repetitive pulses with a higher quality. Many research studies are being conducted in different areas that need a flexible pulse modulator to vary pulse features to investigate the influence of these variations on the application. In addition, there is the need to prevent the waste of a considerable amount of energy caused by the arc phenomena that frequently occur after the plasma process. The control over power flow during the supply process is a critical skill that enables the pulse supply to halt the supply process at any stage. Different pulse modulators which utilise different accumulation techniques including Marx Generators (MG), Magnetic Pulse Compressors (MPC), Pulse Forming Networks (PFN) and Multistage Blumlein Lines (MBL) are currently employed to supply a wide range of applications. Gas/Magnetic switching technologies (such as spark gap and hydrogen thyratron) have conventionally been used as switching devices in pulse modulator structures because of their high voltage ratings and considerably low rising times. However, they also suffer from serious drawbacks such as, their low efficiency, reliability and repetition rate, and also their short life span. Being bulky, heavy and expensive are the other disadvantages associated with these devices. Recently developed solid-state switching technology is an appropriate substitution for these switching devices due to the benefits they bring to the pulse supplies. Besides being compact, efficient, reasonable and reliable, and having a long life span, their high frequency switching skill allows repetitive operation of pulsed power supply. The main concerns in using solid-state transistors are the voltage rating and the rising time of available switches that, in some cases, cannot satisfy the application’s requirements. However, there are several power electronics configurations and techniques that make solid-state utilisation feasible for high voltage pulse generation. Therefore, the design and development of novel methods and topologies with higher efficiency and flexibility for pulsed power generators have been considered as the main scope of this research work. This aim is pursued through several innovative proposals that can be classified under the following two principal objectives. • To innovate and develop novel solid-state based topologies for pulsed power generation • To improve available technologies that have the potential to accommodate solid-state technology by revising, reconfiguring and adjusting their structure and control algorithms. The quest to distinguish novel topologies for a proper pulsed power production was begun with a deep and through review of conventional pulse generators and useful power electronics topologies. As a result of this study, it appears that efficiency and flexibility are the most significant demands of plasma applications that have not been met by state-of-the-art methods. Many solid-state based configurations were considered and simulated in order to evaluate their potential to be utilised in the pulsed power area. Parts of this literature review are documented in Chapter 1 of this thesis. Current source topologies demonstrate valuable advantages in supplying the loads with capacitive characteristics such as plasma applications. To investigate the influence of switching transients associated with solid-state devices on rise time of pulses, simulation based studies have been undertaken. A variable current source is considered to pump different current levels to a capacitive load, and it was evident that dissimilar dv/dts are produced at the output. Thereby, transient effects on pulse rising time are denied regarding the evidence acquired from this examination. A detailed report of this study is given in Chapter 6 of this thesis. This study inspired the design of a solid-state based topology that take advantage of both current and voltage sources. A series of switch-resistor-capacitor units at the output splits the produced voltage to lower levels, so it can be shared by the switches. A smart but complicated switching strategy is also designed to discharge the residual energy after each supply cycle. To prevent reverse power flow and to reduce the complexity of the control algorithm in this system, the resistors in common paths of units are substituted with diode rectifiers (switch-diode-capacitor). This modification not only gives the feasibility of stopping the load supply process to the supplier at any stage (and consequently saving energy), but also enables the converter to operate in a two-stroke mode with asymmetrical capacitors. The components’ determination and exchanging energy calculations are accomplished with respect to application specifications and demands. Both topologies were simply modelled and simulation studies have been carried out with the simplified models. Experimental assessments were also executed on implemented hardware and the approaches verified the initial analysis. Reports on details of both converters are thoroughly discussed in Chapters 2 and 3 of the thesis. Conventional MGs have been recently modified to use solid-state transistors (i.e. Insulated gate bipolar transistors) instead of magnetic/gas switching devices. Resistive insulators previously used in their structures are substituted by diode rectifiers to adjust MGs for a proper voltage sharing. However, despite utilizing solid-state technology in MGs configurations, further design and control amendments can still be made to achieve an improved performance with fewer components. Considering a number of charging techniques, resonant phenomenon is adopted in a proposal to charge the capacitors. In addition to charging the capacitors at twice the input voltage, triggering switches at the moment at which the conducted current through switches is zero significantly reduces the switching losses. Another configuration is also introduced in this research for Marx topology based on commutation circuits that use a current source to charge the capacitors. According to this design, diode-capacitor units, each including two Marx stages, are connected in cascade through solid-state devices and aggregate the voltages across the capacitors to produce a high voltage pulse. The polarity of voltage across one capacitor in each unit is reversed in an intermediate mode by connecting the commutation circuit to the capacitor. The insulation of input side from load side is provided in this topology by disconnecting the load from the current source during the supply process. Furthermore, the number of required fast switching devices in both designs is reduced to half of the number used in a conventional MG; they are replaced with slower switches (such as Thyristors) that need simpler driving modules. In addition, the contributing switches in discharging paths are decreased to half; this decrease leads to a reduction in conduction losses. Associated models are simulated, and hardware tests are performed to verify the validity of proposed topologies. Chapters 4, 5 and 7 of the thesis present all relevant analysis and approaches according to these topologies.

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Books on the topic "Metal-oxide semiconductor field-effect transistor (MOSEFET)"

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Tsividis, Yannis. Operation and modeling of the MOS transistor. 3rd ed. Oxford University Press, 2011.

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Tsividis, Yannis. Operation and modeling of the MOS transistor. 3rd ed. Oxford University Press, 2010.

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Tsividis, Yannis. Operation and modeling of the MOS transistor. 3rd ed. Oxford University Press, 2010.

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Amara, Amara, and Rozeau Olivier, eds. Planar double-gate transistor: From technology to circuit. Springer, 2009.

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C, Sansen Willy M., and Maes H. E, eds. Matching properties of deep sub-micron MOS transistors. Springer, 2005.

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Tsividis, Yannis. Operation and modeling of the MOS transistor. 2nd ed. Oxford University Press, 1999.

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Operation and modeling of the MOS transistor. 2nd ed. WCB/McGraw-Hill, 1998.

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Tsividis, Yannis. Operation and modeling of the MOS transistor. 2nd ed. WCB/McGraw-Hill, 1999.

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Tsividis, Yannis. Operation and modeling of the MOS transistor. McGraw-Hill, 1987.

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Charge-based MOS transistor modelling: The EKV model for low-power and RF IC design. John Wiley & Sons, 2006.

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Book chapters on the topic "Metal-oxide semiconductor field-effect transistor (MOSEFET)"

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Evstigneev, Mykhaylo. "Metal–Oxide–Semiconductor Field Effect Transistor (MOSFET)." In Introduction to Semiconductor Physics and Devices. Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-031-08458-4_10.

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Tsang, Paul J. "Structures and Fabrication of Metal-Oxide-Silicon Field-Effect Transistor." In Handbook of Advanced Semiconductor Technology and Computer Systems. Springer Netherlands, 1988. http://dx.doi.org/10.1007/978-94-011-7056-7_4.

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Bharti, Deepshikha, and Aminul Islam. "Operational Characteristics of Vertically Diffused Metal Oxide Semiconductor Field Effect Transistor." In Nanoscale Devices. CRC Press, 2018. http://dx.doi.org/10.1201/9781315163116-5.

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Bharti, Deepshikha, and Aminul Islam. "U-Shaped Gate Trench Metal Oxide Semiconductor Field Effect Transistor: Structures and Characteristics." In Nanoscale Devices. CRC Press, 2018. http://dx.doi.org/10.1201/9781315163116-4.

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"Metal-Oxide-Semiconductor Field-Effect Transistor." In Complete Guide to Semiconductor Devices. John Wiley & Sons, Inc., 2010. http://dx.doi.org/10.1002/9781118014769.ch22.

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Brews, John. "Metal-Oxide-Semiconductor Field-Effect Transistor." In Microelectronics 2nd Edition. CRC Press, 2005. http://dx.doi.org/10.1201/9781420037593.ch4.

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Brews, John. "Metal-Oxide-Semiconductor Field-Effect Transistor." In Microelectronics 2nd Edition. CRC Press, 2005. http://dx.doi.org/10.1201/9780849333910.ch4.

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Brews, John R. "Metal-Oxide-Semiconductor Field-Effect Transistor." In The RF Transmission Systems Handbook. CRC Press, 2017. http://dx.doi.org/10.1201/9781420041132-10.

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Brews, John. "Metal-Oxide-Semiconductor Field-Effect Transistor." In The RF Transmission Systems Handbook. CRC Press, 2002. http://dx.doi.org/10.1201/9781420041132-c10.

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"Metal-Oxide-Semiconductor Field-Effect Transistor." In Microelectronics, edited by John R. Brews. CRC Press, 2018. http://dx.doi.org/10.1201/9781315220482-4.

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Conference papers on the topic "Metal-oxide semiconductor field-effect transistor (MOSEFET)"

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Hentschel, Rico, Andre Wachowiak, Andreas Groser, et al. "Pseudo-vertical GaN-based trench gate metal oxide semiconductor field effect transistor." In 2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM). IEEE, 2016. http://dx.doi.org/10.1109/asdam.2016.7805882.

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Loan, Sajad A., Faisal Bashir, M. Rafat, Abdul Rahman M. Alamoud, and Shuja A. Abbasi. "A high performance double gate dopingless metal oxide semiconductor field effect transistor." In 2014 20th International Conference on Ion Implantation Technology (IIT). IEEE, 2014. http://dx.doi.org/10.1109/iit.2014.6939996.

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Raju, Uthaman, Praveen Pandojirao-S., Niraja Sivakumar, and Dereje Agonafer. "Static Power Consumption: Silicon on Insulator Metal Oxide Semiconductor Field Effect Transistor." In ASME 2007 International Mechanical Engineering Congress and Exposition. ASMEDC, 2007. http://dx.doi.org/10.1115/imece2007-44059.

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The static power consumption due to leakage current plays a significant part in semiconductor devices, as the device dimensions continue to shrink. Low power dissipation is one of the critical factors needed to achieve high performance in a chip. New methods are continuously being implemented for reduction of leakage current in deep sub micron ultra thin SOI MOSFET using device simulator tools. In this paper, an 18nm gate length ultra thin SOI MOSFET is simulated for different silicon body thicknesses and the leakage current is determined by using the device simulator, MEDICITM. It is demonstrated that MEDICI™ device simulations is a good tool that can effectively be used for ultra thin SOI MOSFET devices to study the effect of design parameters on the leakage current. Ultra thin SOI MOSFET with 18nm gate length of different Silicon body thickness is simulated and the leakage current as determined by using MEDICI™ shows that the leakage current decreases by 10–15% as the silicon body thickness reduces by 2 nm.

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Bardhan, Sudipta, Manodipan Sahoo, and Hafizur Rahaman. "Analytical drain current model for graphene metal-oxide semiconductor field-effect transistor." In 2015 2nd International Conference on Electrical Information and Communication Technologies (EICT). IEEE, 2015. http://dx.doi.org/10.1109/eict.2015.7391989.

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Matsumoto, T., H. Kato, T. Makino, et al. "Normally Off Diamond Metal-Oxide-Semiconductor Field-Effect-Transistor with Inversion Mode." In 2017 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2017. http://dx.doi.org/10.7567/ssdm.2017.o-3-02.

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Sugimura, A., K. Okuyama, and H. Sunami. "A Vertical-Channel Metal-Oxide-Semiconductor Field-Effect Transistor with Fully-Oxidized Silicon Beam Isolation." In 2008 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2008. http://dx.doi.org/10.7567/ssdm.2008.p-3-8.

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Seven, Fikri, and ve Mustafa Sen. "Fabrication and Characterization of a Metal Oxide Semiconductor Field Effect Transistor (MOSFET)-based Micro pH Sensor." In 2020 Medical Technologies Congress (TIPTEKNO). IEEE, 2020. http://dx.doi.org/10.1109/tiptekno50054.2020.9299291.

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Rusu, Alexandru, Giovanni A. Salvatore, David Jimenez, and Adrian M. Ionescu. "Metal-Ferroelectric-Meta-Oxide-semiconductor field effect transistor with sub-60mV/decade subthreshold swing and internal voltage amplification." In 2010 IEEE International Electron Devices Meeting (IEDM). IEEE, 2010. http://dx.doi.org/10.1109/iedm.2010.5703374.

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Choi, Byoungseon, Hyunae Park, Dongsoo Kim, and Byoungdeog Choi. "Improvement of drain leakage current characteristics in metal-oxide-semiconductor-field-effect-transistor by asymmetric source-drain structure." In 2012 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK). IEEE, 2012. http://dx.doi.org/10.1109/imfedk.2012.6218598.

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Liu, Biing-Der, Si-Chen Lee, Kou-Chen Liu, Tai Ping Sun, and Sheng-Jehn Yang. "High breakdown voltage InSb p-channel metal-oxide-semiconductor field effect transistor prepared by photoenhanced chemical vapor deposition." In SPIE's International Symposium on Optical Engineering and Photonics in Aerospace Sensing, edited by Eustace L. Dereniak and Robert E. Sampson. SPIE, 1994. http://dx.doi.org/10.1117/12.179699.

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