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Relevant bibliographies by topics / Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET)

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Academic literature on the topic 'Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET)'

Author: Grafiati

Published: 4 June 2021

Last updated: 7 September 2023

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Journal articles on the topic "Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET)"

1

Bakhoum, Ezzat G., and Cheng Zhang. "Field Effect Transistor with Nanoporous Gold Electrode." Micromachines 14, no. 6 (2023): 1135. http://dx.doi.org/10.3390/mi14061135.

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Nanoporous gold (NPG) has excellent catalytic activity and has been used in the recent literature on this issue as a sensor in various electrochemical and bioelectrochemical reactions. This paper reports on a new type of metal–oxide–semiconductor field-effect transistor (MOSFET) that utilizes NPG as a gate electrode. Both n-channel and p-channel MOSFETs with NPG gate electrodes have been fabricated. The MOSFETs can be used as sensors and the results of two experiments are reported: the detection of glucose and the detection of carbon monoxide. A detailed comparison of the performance of the ne

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Marcoux, J., J. Orchard-Webb, and J. F. Currie. "Complementary metal oxide semiconductor-compatible junction field-effect transistor characterization." Canadian Journal of Physics 65, no. 8 (1987): 982–86. http://dx.doi.org/10.1139/p87-156.

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We report on the fabrication and electrical characterization of a vertical junction-gate field-effect transistor (JFET) that is compatible with all complementary metal oxide semiconductor (CMOS) technologies. It can be used as a buried load for an enhancement n-channel metal oxide semiconductor field-effect transistor (n-MOSFET), replacing the p-MOSFET within the standard CMOS inverter configuration and resulting in a 40% net area economy in standard cells. To be entirely CMOS process compatible, this JFET device differs from others in the literature in that dopant concentrations in the n subs

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3

Cha, Kyuhyun, and Kwangsoo Kim. "Asymmetric Split-Gate 4H-SiC MOSFET with Embedded Schottky Barrier Diode for High-Frequency Applications." Energies 14, no. 21 (2021): 7305. http://dx.doi.org/10.3390/en14217305.

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4H-SiC Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) with embedded Schottky barrier diodes are widely known to improve switching energy loss by reducing reverse recovery characteristics. However, it weakens the static characteristics such as specific on-resistance and breakdown voltage. To solve this problem, in this paper, an Asymmetric 4H-SiC Split Gate MOSFET with embedded Schottky barrier diode (ASG-MOSFET) is proposed and analyzed by conducting a numerical TCAD simulation. Due to the asymmetric structure of ASG-MOSFET, it has a relatively narrow junction field-effect transi

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John Chelliah, Cyril R. A., and Rajesh Swaminathan. "Current trends in changing the channel in MOSFETs by III–V semiconducting nanostructures." Nanotechnology Reviews 6, no. 6 (2017): 613–23. http://dx.doi.org/10.1515/ntrev-2017-0155.

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AbstractThe quest for high device density in advanced technology nodes makes strain engineering increasingly difficult in the last few decades. The mechanical strain and performance gain has also started to diminish due to aggressive transistor pitch scaling. In order to continue Moore’s law of scaling, it is necessary to find an effective way to enhance carrier transport in scaled dimensions. In this regard, the use of alternative nanomaterials that have superior transport properties for metal-oxide-semiconductor field-effect transistor (MOSFET) channel would be advantageous. Because of the e

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He, Xibin. "The Advantages and Applications of IGBT Compared with Conventional BJT and MOSFET." Journal of Physics: Conference Series 2386, no. 1 (2022): 012054. http://dx.doi.org/10.1088/1742-6596/2386/1/012054.

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Abstract Nowadays, the power semiconductor devices have been used in many fields like wind power generation systems, the rail transit. Bipolar junction transistors (BJTs) and metal-oxide-semiconductor field-effect transistors (MOSFETs) as well as some other devices are the dominating the market. The insulated gate bipolar transistor (IGBT) as a mixed device of the BJT and the MOSFET, has a preeminent performance. In this paper, the characteristics of the punch through IGBT (PT-IGBT), the MOSFET and the BJT will be investigated by TCAD. Then the PT-IGBT is compared with the BJT and the MOSFET,

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Kyaw, Wut Hmone, and May Nwe Myint Aye. "Simulation of Energy Bands for Metal and Semiconductor Junction." Journal La Multiapp 1, no. 2 (2020): 7–13. http://dx.doi.org/10.37899/journallamultiapp.v1i2.107.

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This paper presents the metal-semiconductor band structure analysis for metal-oxide semiconductor field effect transistor (MOSFET). The energy bands were observed at metal-semiconductor and semiconductor-metal junctions. The simulation results show energy variations by using gallium-nitride (GaN) material. Gallium nitride based MOSFETs have some special material properties and wide band-gap. From the energy band, the condition of contact potential, conduction and valence band-edges can be analyzed. The computerized simulation results for getting the band layers are investigated with MATLAB pro

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Islam, Md Rabiul, Md Kamrul Hasan, Md Abdul Mannan, M. Tanseer Ali, and Md Rokib Hasan. "Gate Length Effect on Gallium Nitride Based Double Gate Metal-Oxide-Semiconductor Field-Effect Transistor." AIUB Journal of Science and Engineering (AJSE) 18, no. 2 (2019): 73–80. http://dx.doi.org/10.53799/ajse.v18i2.43.

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We have investigated the performance of Gallium Nitride (GaN) based Double-Gate (DG) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). Atlas Device Simulation Framework -Silvaco has been used to access Non-Equilibrium Green Function to distinguish the transfer characteristics curve, ON state current (ION), OFF-state current (IOFF), Drain Induced Barrier Lowering (DIBL), Subthreshold Swing, Electron Current Density, Conduction Band Energy and Electric Field. The concept of Solid state device physics on the effect of gate length studied for the next generation logic applications. GaN-b

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Gu, Jie, Qingzhu Zhang, Zhenhua Wu, et al. "Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs." Nanomaterials 11, no. 2 (2021): 309. http://dx.doi.org/10.3390/nano11020309.

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A 16-nm-Lg p-type Gate-all-around (GAA) silicon nanowire (Si NW) metal oxide semiconductor field effect transistor (MOSFET) was fabricated based on the mainstream bulk fin field-effect transistor (FinFET) technology. The temperature dependence of electrical characteristics for normal MOSFET as well as the quantum transport at cryogenic has been investigated systematically. We demonstrate a good gate-control ability and body effect immunity at cryogenic for the GAA Si NW MOSFETs and observe the transport of two-fold degenerate hole sub-bands in the nanowire (110) channel direction sub-band stru

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Xu, Haoran, Jianghua Ding, and Jian Dang. "Design and Characteristics of CMOS Inverter based on Multisim and Cadence." Journal of Physics: Conference Series 2108, no. 1 (2021): 012034. http://dx.doi.org/10.1088/1742-6596/2108/1/012034.

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Abstract Known as complementary symmetrical metal oxide semiconductor (cos-mos), complementary metal oxide semiconductor is a metal oxide semiconductor field effect transistor (MOSFET) manufacturing process, which uses complementary and symmetrical pairs of p-type and n-type MOSFETs to realize logic functions. CMOS technology is used to build integrated circuit (IC) chips, including microprocessors, microcontrollers, memory chips (including CMOS BIOS) and other digital logic circuits. CMOS technology is also used in analog circuits, such as image sensors (CMOS sensors), data converters, RF cir

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Lee, Hoontaek, Junsoo Kim, Kumjae Shin, and Wonkyu Moon. "Improving the Performance of the ToGoFET Probe: Advances in Design, Fabrication, and Signal Processing." Micromachines 12, no. 11 (2021): 1303. http://dx.doi.org/10.3390/mi12111303.

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We report recent improvements of the tip-on-gate of field-effect-transistor (ToGoFET) probe used for capacitive measurement. Probe structure, fabrication, and signal processing were modified. The inbuilt metal-oxide-semiconductor field-effect-transistor (MOSFET) was redesigned to ensure reliable probe operation. Fabrication was based on the standard complementary metal-oxide-semiconductor (CMOS) process, and trench formation and the channel definition were modified. Demodulation of the amplitude-modulated drain current was varied, enhancing the signal-to-noise ratio. The I-V characteristics of

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Dissertations / Theses on the topic "Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET)"

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Lin, Xinnan. "Double gate MOSFET technology and applications /." View abstract or full-text, 2007. http://library.ust.hk/cgi/db/thesis.pl?ECED%202007%20LIN.

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李華剛 and Eddie Herbert Li. "Narrow-channel effect in MOSFET." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 1990. http://hub.hku.hk/bib/B31209312.

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Peters, Chris (Christopher Joseph) Carleton University Dissertation Engineering Electrical. "MOSFET based gamma radiation detector." Ottawa, 1992.

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Budihardjo, Irwan Kukuh. "A charge based power MOSFET model /." Thesis, Connect to this title online; UW restricted, 1995. http://hdl.handle.net/1773/5975.

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Singh, Jagar. "Technology, characteristics, and modeling of large-grain polysilicon MOSFET /." View Abstract or Full-Text, 2002. http://library.ust.hk/cgi/db/thesis.pl?ELEC%202002%20SINGH.

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Chen, Qiang. "Scaling limits and opportunities of double-gate MOSFETS." Diss., Georgia Institute of Technology, 2003. http://hdl.handle.net/1853/15011.

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Baird, John Malcolm Edward. "A micro processor based A.C. drive with a Mosfet inverter." Thesis, Cape Technikon, 1991. http://hdl.handle.net/20.500.11838/1119.

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Thesis (Masters Diploma (Electrical Engineering)--Cape Technikon, Cape Town,1991<br>A detailed study into the development of a three phase motor drive, inverter and microprocessor controller using a scalar control method. No mathematical modelling of the system was done as the drive was built around available technology. The inverter circuit is of a Vo~tage source inverter configuration whicp uses MOSFETs switching at a base frequency of between 1.2 KHz and 2 KHz. Provision has been made for speed control and dynamic braking for special applications, since the drive is not going to be

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Bjeletich, Peter John. "Characterization of heteroepitaxial silicon germanium carbon layers for metal oxide semiconductor field effect transistor (MOSFET) applications /." For electronic version search Digital dissertations database. Restricted to UC campuses. Access is free to UC campus dissertations, 2004. http://uclibs.org/PID/11984.

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Thesis (Ph. D.)--University of California, Davis, 2005.<br>Degree granted in Electrical Engineering. Dissertation completed in 2004; degree granted in 2005. Also available via the World Wide Web. (Restricted to UC campuses)

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Man, Tsz Yin. "One dimensional quantum mechanical transport in double-gate MOSFET /." View Abstract or Full-Text, 2003. http://library.ust.hk/cgi/db/thesis.pl?ELEC%202003%20MAN.

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Yoon, Kwang Sub. "A precision analog small-signal model for submicron MOSFET devices." Diss., Georgia Institute of Technology, 1990. http://hdl.handle.net/1853/14935.

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Books on the topic "Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET)"

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Baliga, B. Jayant. Advanced power MOSFET concepts. Springer, 2010.

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Taylor, B. E. Power Mosfet design. Wiley, 1993.

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Warner, R. M. MOSFET theory and design. Oxford University Press, 1999.

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Cherem, Schneider Márcio, ed. MOSFET modeling for circuit analysis and design. World Scientific, 2007.

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Hänsch, W. The drift diffusion equation and its applications in MOSFET modeling. Springer-Verlag, 1991.

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Hänsch, W. The drift diffusion equation and its applications in MOSFET modeling. Springer-Verlag, 1991.

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7

Saijets, Jan. MOSFET RF characterization using bulk and SOI CMOS technologies. VTT Technical Research Centre of Finland, 2007.

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8

Foty, D. MOSFET modeling with SPICE: Principles and practice. Prentice Hall PTR, 1997.

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9

Cheng, Yuhua. MOSFET modeling & BSIM3 user's guide. Kluwer Academic Publishers, 2002.

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Chenming, Hu, ed. MOSFET modeling & BSIM3 user's guide. Kluwer Academic Publishers, 1999.

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Book chapters on the topic "Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET)"

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Evstigneev, Mykhaylo. "Metal–Oxide–Semiconductor Field Effect Transistor (MOSFET)." In Introduction to Semiconductor Physics and Devices. Springer International Publishing, 2022. http://dx.doi.org/10.1007/978-3-031-08458-4_10.

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Tsang, Paul J. "Structures and Fabrication of Metal-Oxide-Silicon Field-Effect Transistor." In Handbook of Advanced Semiconductor Technology and Computer Systems. Springer Netherlands, 1988. http://dx.doi.org/10.1007/978-94-011-7056-7_4.

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Bharti, Deepshikha, and Aminul Islam. "Operational Characteristics of Vertically Diffused Metal Oxide Semiconductor Field Effect Transistor." In Nanoscale Devices. CRC Press, 2018. http://dx.doi.org/10.1201/9781315163116-5.

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Saha, Jhuma, Amrita Kumari, Shankaranand Jha, and Subindu Kumar. "On the Voltage Transfer Characteristics (VTC) of some Nanoscale Metal-Oxide-Semiconductor Field-Effect-Transistors (MOSFETs)." In Physics of Semiconductor Devices. Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-03002-9_52.

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Bharti, Deepshikha, and Aminul Islam. "U-Shaped Gate Trench Metal Oxide Semiconductor Field Effect Transistor: Structures and Characteristics." In Nanoscale Devices. CRC Press, 2018. http://dx.doi.org/10.1201/9781315163116-4.

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Roy, Sunipa, Chandan Kumar Ghosh, Sayan Dey, and Abhijit Kumar Pal. "Metal Oxide Field Effect Transistor (MOSFET)." In Solid State & Microelectronics Technology. BENTHAM SCIENCE PUBLISHERS, 2023. http://dx.doi.org/10.2174/9789815079876123010006.

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More or less than 17 years since D. Kahng and M. M. Atalla first conveyed the demonstration of a Si-SiO2 MOS transistor (MOSFET). In our regular lives, the impression of these MOS-based IC’s was imparted -just beginning to be felt. This incredible explosion has been caused by many inventions and countless numbers of perhaps small but crucial contributions by many researchers. Historical signs of progress of the metal-oxide-semiconductor field-effect transistor (MOSFET) during the last 60 years are appraised, from the 1928 patent disclosures of the field-effect conductivity modulation concept and the semiconductor triodes structures proposed by Lilienfeld to the 1947 Shockley-originated efforts which controlled to the laboratory demonstration of the modern silicon MOSFET 30 years later in 1960. A review is then made of the mileposts of the past 30 years leading to the latest submicron silicon logic CMOS (Complementary MOS and BICMOS (Combination of Bipolar-junction-Transistor and CMOS) arrays and the three-dimensional and ferroelectric extensions of Dennard‘s one-transistor dynamic random access memory (DRAM) cell. This chapter discusses the fabrication of MOSFET and its principal operations based on the concept of metal-oxide-semiconductor technology. Further, the discussion is focused on the details mathematical modeling of MOS capacitors, device characteristics, and the process of channel length modulation and its application. The conversation is continuing on the concept of CMOS technology and its combination with the transistor – the BiCMOS technology.

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Radamson, H. H. "Basics of metal–oxide–semiconductor field-effect transistor (MOSFET)." In CMOS Past, Present and Future. Elsevier, 2018. http://dx.doi.org/10.1016/b978-0-08-102139-2.00001-x.

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Robinson Azariah John Chelliah, Cyril, and Rajesh Swaminathan. "Binary Metal Oxides Thin Films Prepared from Pulsed Laser Deposition." In Practical Applications of Laser Ablation. IntechOpen, 2021. http://dx.doi.org/10.5772/intechopen.96161.

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The semiconductor industry flourished from a simple Si-based metal oxide semiconductor field effect transistor to an era of MOSFET-based smart materials. In recent decades, researchers have been replacing all the materials required for the MOSFET device. They replaced the substrate with durable materials, lightweight materials, translucent materials and so on. They have came up with the possibility of replacing dielectric silicon dioxide material with high-grade dielectric materials. Even then the channel shift in the MOSFET was the new trend in MOSFET science. From the bulk to the atomic level, transistors have been curiously researched across the globe for the use of electronic devices. This research was also inspired by the different semiconductor materials relevant to the replacement of the dielectric channel/gate. Study focuses on diverse materials such as zinc oxides (ZnO), electrochromic oxides such as molybdenum oxides (including MoO3 and MoO2) and other binary oxides using ZnO and MoO3. The primary objective of this research is to study pulsed laser deposited thin films such as ZnO, MoO3, binary oxides such as binary ZnO /MoO3, ZnO /TiO2 and ZnO/V2O5 and to analyse their IV properties for FET applications. To achieve the goal, the following working elements have been set: investigation of pulsed laser deposited thin film of metal oxides and thin film of binary metal oxide nanostructures with effects of laser repetition and deposition temperatures.

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Polanco-Martagón, Said, Gerardo Reyes Salgado, Georgina Flores Becerra, and Esteban Tlelo Cuautle. "Distributed Selection of the Optimal Sizes of Analog Unity Gain Cells by Fuzzy Set Intersection." In Advances in Computer and Electrical Engineering. IGI Global, 2015. http://dx.doi.org/10.4018/978-1-4666-6627-6.ch008.

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A distributed system based on Fuzzy sets to select the optimal sizes of Unity Gain Cells (UGCs) is introduced. A zoom technique is also introduced to search for the optimal sizes in a more refined way. The selected sizes accomplish target specifications established by linguistic variables, namely gain “closer to” unity and “large” bandwidth, which are represented by fuzzy sets. The case of study is focused on three Voltage Follower and a CFOA whose performance characteristics are evaluated by using IC technology of 0.35µm and 180µm, respectively, and the circuit simulation program SPICE. Every circuit is codified by the width and large (W/L) of every Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET) and by its bias current source. From the population of feasible solutions computed by evolutionary algorithms, the optimal W/L sizes are selected by the proposed distributed system through the intersection of fuzzy sets.

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Bala, Shashi, Mamta Khosla, and Raj Kumar. "CNTFET-Based Memory Design." In Advances in Computer and Electrical Engineering. IGI Global, 2020. http://dx.doi.org/10.4018/978-1-7998-1393-4.ch002.

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As the feature size of device has been scaling down for many decades, conventional CMOS technology-based static random access memory (SRAM) has reached its limit due to significant leakage power. Therefore, carbon nanotube field effect transistor (CNTFET) can be considered most suitable alternative for SRAM. In this chapter, the performance and stability of CNTFET-based SRAM cells have been analyzed. Numerous figures of merit (FOM) (e.g., read/write noise margin, power dissipation, and read/write delay) have been considered to analyze the performance of CNTFET-based. The static power consumption in CNTFET-based SRAM cell was compared with conventional complementary metal oxide semiconductor (CMOS)-based SRAM cell. Conventional CNTFET and tunnel CNTFET-based SRAMs have also been considered for comparison. From the simulation results, it is observed that tunnel CNTFET SRAM cells have shown improved FOM over conventional CNTFET 6T SRAM cells without losing stability.

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Conference papers on the topic "Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET)"

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Raju, Uthaman, Praveen Pandojirao-S., Niraja Sivakumar, and Dereje Agonafer. "Static Power Consumption: Silicon on Insulator Metal Oxide Semiconductor Field Effect Transistor." In ASME 2007 International Mechanical Engineering Congress and Exposition. ASMEDC, 2007. http://dx.doi.org/10.1115/imece2007-44059.

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The static power consumption due to leakage current plays a significant part in semiconductor devices, as the device dimensions continue to shrink. Low power dissipation is one of the critical factors needed to achieve high performance in a chip. New methods are continuously being implemented for reduction of leakage current in deep sub micron ultra thin SOI MOSFET using device simulator tools. In this paper, an 18nm gate length ultra thin SOI MOSFET is simulated for different silicon body thicknesses and the leakage current is determined by using the device simulator, MEDICITM. It is demonstr

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Seven, Fikri, and ve Mustafa Sen. "Fabrication and Characterization of a Metal Oxide Semiconductor Field Effect Transistor (MOSFET)-based Micro pH Sensor." In 2020 Medical Technologies Congress (TIPTEKNO). IEEE, 2020. http://dx.doi.org/10.1109/tiptekno50054.2020.9299291.

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Yining, Liu, Wang Renze, Yang Yapeng, et al. "The Choice of MOSFET Manufacturing Technique Used in Emergency Response Robot." In 2020 International Conference on Nuclear Engineering collocated with the ASME 2020 Power Conference. American Society of Mechanical Engineers, 2020. http://dx.doi.org/10.1115/icone2020-16222.

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Abstract For the aim of helping the development of robots used in Radiological Emergency Planning and Preparedness, the Total Ionizing Dose (TID) effects on the threshold voltage shift (ΔVth) of different kinds of Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET) with different geometry and different scaling technology was compared. The different gate width and length dependent between bulk Complementary Metal-Oxide-Semiconductor Transistor (CMOS) process and nanowire (NW) MOSFET as well as higher and lower technology node is noticed. The reason of this difference is explained from th

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Jones, Keith W., Atindra K. Mitra, and Jeffry Ramsey. "Heat Generation in the Metal-Oxide-Silicon Field-Effect Transistor (MOSFET) and Possible Thermal Management Solutions." In International Conference On Environmental Systems. SAE International, 2004. http://dx.doi.org/10.4271/2004-01-2571.

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Alhasani, Reem, Taichi Yabe, Yutaro Iyama, Mohammed Alhasani, Quang N. Nguyen, and Hiroshi Kawarada. "Effect of Surface Charge Model in the Characterization of Two-dimensional Hydrogenated Nanocrystalline-diamond Metal Oxide Semiconductor Field Effect Transistor (MOSFET) with Device Simulation." In 2021 IEEE 16th Nanotechnology Materials and Devices Conference (NMDC). IEEE, 2021. http://dx.doi.org/10.1109/nmdc50713.2021.9677505.

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Reem, A., A. Mohammed, Quang N. Nguyen, and H. Kawarada. "Characterization and Analysis of Two-dimensional Hydrogenated Nanocrystalline-diamond Metal Oxide Semiconductor Field Effect Transistor (MOSFET) using Different Surface Charge Models with Device Simulation." In 2020 IEEE 20th International Conference on Nanotechnology (IEEE-NANO). IEEE, 2020. http://dx.doi.org/10.1109/nano47656.2020.9183658.

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Wang, Xi, and Ali Shakouri. "Thermal Characterization of a Single MOSFET Transistor at Cryogenic Temperatures." In ASME 2009 InterPACK Conference collocated with the ASME 2009 Summer Heat Transfer Conference and the ASME 2009 3rd International Conference on Energy Sustainability. ASMEDC, 2009. http://dx.doi.org/10.1115/interpack2009-89084.

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The aggressive miniaturization trend in microelectronic design has pushed the transistor gate length to a range of hundreds of nanometers. The study of heat transport and dissipation at the device level is becoming an important part of the overall thermal design. In general, temperature non-uniformity peaks in the transistor drain region due to the higher electric potential field and electron thermalization close to the drain. Drastic changes in both electrical current flow and the thermal heat flow to the heat sink can be caused by this localized temperature non-uniformity. Ballistic transpor

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Rai, Raghaw, James Conner, Sharon Murphy, and Swaminathan Subramanian. "Challenges in Evaluating Thickness, Phase, and Strain in Semiconductor Devices Using High Resolution Transmission Electron Microscopy." In ISTFA 2006. ASM International, 2006. http://dx.doi.org/10.31399/asm.cp.istfa2006p0343.

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Abstract The aggressive scaling of metal oxide semiconductor field effect transistor (MOSFET) device features, including gate dielectrics, silicides, and strained Si channels, presents unique metrology and characterization challenges to control electrical properties such as reliability and leakage current. This paper describes challenges faced in measuring the thickness of thin gate oxides and interfacial layers found in high-K gate dielectrics, determining Ni silicide phase in devices, and characterizing strain in MOSFETs with SiGe stressors. From case studies, it has been observed that thin

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Lee, Bongmook, Young-Hwan Choi, Casey Kirkpatrick, Alex Q. Huang, and Veena Misra. "Performance enhancement of AlGaN/GaN metal-oxide-semiconductor heterojunction field-effect transistor (MOSHFET) with atomic layer deposition (ALD) of high-k HfAlO gate dielectric layer." In 2011 International Semiconductor Device Research Symposium (ISDRS). IEEE, 2011. http://dx.doi.org/10.1109/isdrs.2011.6135162.

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Abe, Yoshiyuki, Akira Nakajima, Yoshihiko Maeda, and Makoto Shimose. "Development of Plate Heat Pipes for the Thermal Management of Power Electronics." In ASME 2013 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems. American Society of Mechanical Engineers, 2013. http://dx.doi.org/10.1115/ipack2013-73086.

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Plate heat pipes, 4.0mm × 40mm × 375mm, of maximum heat transfer capability, Qmax, of the order of hundred W have been developed for the thermal management in power electronic devices such as IGBT (Insulated Gate Bipolar Transistor), MOSFET (Metal Oxide Semiconductor Field Effect Transistor), et al. The thermal performance in both horizontal and vertical orientations were experimentally evaluated, and outstanding thermal performance of Qmax up to 600W in the vertical orientation and thermal resistance as low as 0.01K/W were confirmed. In addition to the heat pipes, thermosyphons of the same di

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