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Dissertations / Theses on the topic 'Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET)'

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Published: 4 June 2021

Last updated: 7 September 2023

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1

Lin, Xinnan. "Double gate MOSFET technology and applications /." View abstract or full-text, 2007. http://library.ust.hk/cgi/db/thesis.pl?ECED%202007%20LIN.

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2

李華剛 and Eddie Herbert Li. "Narrow-channel effect in MOSFET." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 1990. http://hub.hku.hk/bib/B31209312.

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3

Peters, Chris (Christopher Joseph) Carleton University Dissertation Engineering Electrical. "MOSFET based gamma radiation detector." Ottawa, 1992.

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4

Budihardjo, Irwan Kukuh. "A charge based power MOSFET model /." Thesis, Connect to this title online; UW restricted, 1995. http://hdl.handle.net/1773/5975.

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5

Singh, Jagar. "Technology, characteristics, and modeling of large-grain polysilicon MOSFET /." View Abstract or Full-Text, 2002. http://library.ust.hk/cgi/db/thesis.pl?ELEC%202002%20SINGH.

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6

Chen, Qiang. "Scaling limits and opportunities of double-gate MOSFETS." Diss., Georgia Institute of Technology, 2003. http://hdl.handle.net/1853/15011.

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7

Baird, John Malcolm Edward. "A micro processor based A.C. drive with a Mosfet inverter." Thesis, Cape Technikon, 1991. http://hdl.handle.net/20.500.11838/1119.

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Thesis (Masters Diploma (Electrical Engineering)--Cape Technikon, Cape Town,1991<br>A detailed study into the development of a three phase motor drive, inverter and microprocessor controller using a scalar control method. No mathematical modelling of the system was done as the drive was built around available technology. The inverter circuit is of a Vo~tage source inverter configuration whicp uses MOSFETs switching at a base frequency of between 1.2 KHz and 2 KHz. Provision has been made for speed control and dynamic braking for special applications, since the drive is not going to be

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8

Bjeletich, Peter John. "Characterization of heteroepitaxial silicon germanium carbon layers for metal oxide semiconductor field effect transistor (MOSFET) applications /." For electronic version search Digital dissertations database. Restricted to UC campuses. Access is free to UC campus dissertations, 2004. http://uclibs.org/PID/11984.

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Thesis (Ph. D.)--University of California, Davis, 2005.<br>Degree granted in Electrical Engineering. Dissertation completed in 2004; degree granted in 2005. Also available via the World Wide Web. (Restricted to UC campuses)

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9

Man, Tsz Yin. "One dimensional quantum mechanical transport in double-gate MOSFET /." View Abstract or Full-Text, 2003. http://library.ust.hk/cgi/db/thesis.pl?ELEC%202003%20MAN.

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10

Yoon, Kwang Sub. "A precision analog small-signal model for submicron MOSFET devices." Diss., Georgia Institute of Technology, 1990. http://hdl.handle.net/1853/14935.

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11

Yin, Chunshan. "Source/drain and gate design of advanced MOSFET devices /." View abstract or full-text, 2005. http://library.ust.hk/cgi/db/thesis.pl?ELEC%202005%20YIN.

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12

Bordelon, John H. "A large-signal model for the RF power MOSFET." Diss., Georgia Institute of Technology, 1999. http://hdl.handle.net/1853/15048.

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13

Tuladhar, Looja R. "Resonant power MOSFET drivers for LED lighting /." Connect to resource online, 2009. http://rave.ohiolink.edu/etdc/view?acc_num=ysu1264709029.

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14

Kong, Frederick. "Silicon-on-sapphire MOSFET parameter extraction by small-signal measurement /." [St. Lucia, Qld.], 2002. http://www.library.uq.edu.au/pdfserve.php?image=thesisabs/absthe17051.pdf.

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15

Kulkarni, Anish S. "Study of Tunable Analog Circuits Using Double Gate Metal Oxide Semiconductor Field Effect Transistors." Ohio University / OhioLINK, 2009. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1234552603.

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16

Waseem, Akbar. "Effect of gate length in enhancing current in a silicon nanowire wrap around gate MOSFET." Diss., Columbia, Mo. : University of Missouri-Columbia, 2006. http://hdl.handle.net/10355/5878.

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Thesis (M.S.)--University of Missouri-Columbia, 2006.<br>The entire dissertation/thesis text is included in the research.pdf file; the official abstract appears in the short.pdf file (which also appears in the research.pdf); a non-technical general description, or public abstract, appears in the public.pdf file. Title from title screen of research.pdf file (viewed on September 14, 2007) Vita. Includes bibliographical references.

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17

Yen, Chi-min 1949. "Two-dimensional simulation of power MOSFET near breakdown." Thesis, The University of Arizona, 1988. http://hdl.handle.net/10150/276695.

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A simulation program has been developed to facilitate the investigation and analysis of power semiconductor devices under the reverse-bias condition. The electrostatic potential distribution is solved by using Poisson's equation alone, with particular attention to the neighborhood of avalanche breakdown. Because of its generality and efficiency, the program emerges as a powerful engineering tool for the design of power devices incorporating special junction termination techniques. Results are presented for a DMOS structure to illustrate the improvement in breakdown voltage when a field plate i

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18

Tsui, Kenneth Kin Pun. "RF characterization and modeling of MOSFET power amplifier in wireless communication /." View Abstract or Full-Text, 2003. http://library.ust.hk/cgi/db/thesis.pl?ELEC%202003%20TSUI.

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19

Wang, Lihui. "Quantum Mechanical Effects on MOSFET Scaling." Diss., Available online, Georgia Institute of Technology, 2006, 2006. http://etd.gatech.edu/theses/available/etd-07072006-111805/.

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Thesis (Ph. D.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2007.<br>Philip First, Committee Member ; Ian F. Akyildiz, Committee Member ; Russell Dupuis, Committee Member ; James D. Meindl, Committee Chair ; Willianm R. Callen, Committee Member.

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20

Murali, Raghunath. "Scaling opportunities for bulk accumulation and inversion MOSFETs for gigascale integration." Diss., Available online, Georgia Institute of Technology, 2004:, 2004. http://etd.gatech.edu/theses/submitted/etd-02132004-173432/unrestricted/murali%5FRaghunath%5F405%5F.pdf.

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Thesis (Ph. D.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2004.<br>Hess, Dennis, Committee Member; Meindl, James, Committee Chair; Allen, Phillip, Committee Member; Cressler, John, Committee Member; Davis, Jeffrey, Committee Member. Vita. Includes bibliographical references (leaves 108-119).

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21

Jeon, Yongjoo. "High-k gate dielectric for 100 nm MOSFET application /." Full text (PDF) from UMI/Dissertation Abstracts International, 2000. http://wwwlib.umi.com/cr/utexas/fullcit?p3004296.

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22

Quinones, Eduardo Jose. "Heterojunction MOSFET devices using column IV alloys grown by UHVCVD /." Digital version accessible at:, 1999. http://wwwlib.umi.com/cr/utexas/main.

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23

Linewih, Handoko, and h. linewih@griffith edu au. "Design and Application of SiC Power MOSFET." Griffith University. School of Microelectronic Engineering, 2003. http://www4.gu.edu.au:8080/adt-root/public/adt-QGU20030506.013152.

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This thesis focuses on the design of high voltage MOSFET on SiC and its application in power electronic systems. Parameters extraction for 4H SiC MOS devices is the main focus of the first topic developed in this thesis. Calibration of two-dimensional (2-D) device and circuit simulators (MEDICI and SPICE) with state-of-the-art 4H SiC MOSFETs data are performed, which includes the mobility parameter extraction. The experimental data were obtained from lateral N-channel 4H SiC MOSFETs with nitrided oxide-semiconductor interfaces, exhibiting normal mobility behavior. The presence of increasing in

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24

Linewih, Handoko. "Design and Application of SiC Power MOSFET." Thesis, Griffith University, 2003. http://hdl.handle.net/10072/367638.

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This thesis focuses on the design of high voltage MOSFET on SiC and its application in power electronic systems. Parameters extraction for 4H SiC MOS devices is the main focus of the first topic developed in this thesis. Calibration of two-dimensional (2-D) device and circuit simulators (MEDICI and SPICE) with state-of-the-art 4H SiC MOSFETs data are performed, which includes the mobility parameter extraction. The experimental data were obtained from lateral N-channel 4H SiC MOSFETs with nitrided oxide-semiconductor interfaces, exhibiting normal mobility behavior. The presence of increasing in

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25

Davis, Kenneth Ralph 1964. "Two-dimensional simulation of the effects of total dose ionizing radiation on power-MOSFET breakdown." Thesis, The University of Arizona, 1989. http://hdl.handle.net/10150/277053.

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The effects of ionizing radiation on the breakdown-voltage degradation of power-MOSFET termination structures were examined through two-dimensional simulation. A wide variety of sensitivity to surface-charge density was found for various devices employing floating field rings and/or equipotential field plates. Termination structures that were both insensitive to surface charge and possessed a high breakdown voltage were identified. The results were compared with measurements made on selected structures. The principal ionizing radiation damaging mechanisms in MOS devices are discussed. Modifica

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26

Cheong, Kuan Yew, and n/a. "Silicon Carbide as the Nonvolatile-Dynamic-Memory Material." Griffith University. School of Microelectronic Engineering, 2004. http://www4.gu.edu.au:8080/adt-root/public/adt-QGU20050115.101233.

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This thesis consists of three main parts, starting with the use of improved nitridation processes to grow acceptable quality gate oxides on silicon carbide (SiC)[1][7], to the comprehensive investigation of basic electron-hole generation process in 4H SiC-based metaloxidesemiconductor (MOS) capacitors [8], [9], and concluding with the experimental demonstration and analysis of nonvolatile characteristics of 4H SiC-based memory devices [10][15]. In the first part of the thesis, two improved versions of nitridation techniques have been introduced to alleviate oxide-growth rate and toxicity p

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27

Cheong, Kuan Yew. "Silicon Carbide as the Nonvolatile-Dynamic-Memory Material." Thesis, Griffith University, 2004. http://hdl.handle.net/10072/367177.

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This thesis consists of three main parts, starting with the use of improved nitridation processes to grow acceptable quality gate oxides on silicon carbide (SiC)[1]–[7], to the comprehensive investigation of basic electron-hole generation process in 4H SiC-based metal–oxide–semiconductor (MOS) capacitors [8], [9], and concluding with the experimental demonstration and analysis of nonvolatile characteristics of 4H SiC-based memory devices [10]–[15]. In the first part of the thesis, two improved versions of nitridation techniques have been introduced to alleviate oxide-growth rate and toxicity p

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28

Zhou, Sida. "Mobility Modeling and Simulation of SOI Si1-x Gex p-MOSFET." PDXScholar, 1995. https://pdxscholar.library.pdx.edu/open_access_etds/4954.

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With increasing demand for complex and faster circuits, CMOS technologies are progressing towards the deep-submicron level. Process complexity increases dramatically, and costly techniques are to be developed to create dense field isolation and shallow junctions. Silicon-On-Insulator (SOI) may solve some of these problems. On the other hand, strained Si 1_xGex layers have been successfully grown on Si substrates and demonstrated much higher hole mobility than bulk Si. This can be used to build high-mobility p-MOSFET with a buried Si 1_xGex channel. A high mobility p-MOSFET would improve both t

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29

Nadimi, Ebrahim. "Quantum Mechanical and Atomic Level ab initio Calculation of Electron Transport through Ultrathin Gate Dielectrics of Metal-Oxide-Semiconductor Field Effect Transistors." Doctoral thesis, Universitätsbibliothek Chemnitz, 2008. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-200800477.

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The low dimensions of the state-of-the-art nanoscale transistors exhibit increasing quantum mechanical effects, which are no longer negligible. Gate tunneling current is one of such effects, that is responsible for high power consumption and high working temperature in microprocessors. This in turn put limits on further down scaling of devices. Therefore modeling and calculation of tunneling current is of a great interest. This work provides a review of existing models for the calculation of the gate tunneling current in MOSFETs. The quantum mechanical effects are studied with a model, based o

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30

Bayimissa, Khader Destaing Mananga. "Characterisation of radiation effects on power system components for cubesats." Thesis, Cape Peninsula University of Technology, 2015. http://hdl.handle.net/20.500.11838/2191.

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Thesis (MTech (Electrical Engineering))--Cape Peninsula University of Technology.<br>Front-end power converters for nanosatellite applications demand better performance in accurate reference tracking because of the wide-range input voltage of the solar panels. The very tight output voltage requirements demand a robust, reliable, and high-efficiency converter. The control of such a converter is very complex and time consuming to design. Two commonly used control modes are current and voltage control. The design and implementation of a voltage controller for DC–DC power converter is simpler b

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31

Kobayashi, Takuma. "Study on Defects in SiC MOS Structures and Mobility-Limiting Factors of MOSFETs." Kyoto University, 2018. http://hdl.handle.net/2433/232043.

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32

Aminbeidokhti, Amirhossein. "Measurement and Analysis of Electron Mobility in GaN Power HEMTs." Thesis, Griffith University, 2016. http://hdl.handle.net/10072/368007.

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High-electron-mobility transistor (HEMT) is a promising device for power applications because of their high breakdown voltage, high electron mobility in two-dimensional electron gas (2DEG) area, fast switching capability, high-temperature operating capabilities, compatibility with standard electronic circuits, and low production cost. In contrast to the gate in metal–oxide–semiconductor field-effect transistor (MOSFET), which extends from source to drain, the gate in HEMT splits the device into two main sections: field-effect (section under the gate) and resistive (section outside the gate). R

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33

Makineni, Anil Kumar. "Construction and realisation of measurement system in a radiation field of 10 standard suns." Thesis, Mittuniversitetet, Institutionen för informationsteknologi och medier, 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:miun:diva-17209.

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A measurement system is to be presented, which is used to obtain the I-V characteristics of a solar cell and to track its temperature during irra-diation before mounting it into a complete array/module. This project presents both the design and implementation of an Electronic load for testing the solar cell under field conditions of 10000 W/m^2, which is able to provide current versus voltage and power versus voltage charac-teristics of a solar cell using a software based model developed in Lab-VIEW. An efficient water cooling method which includes a heat pipe array system is also suggested. T

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34

Raszmann, Emma Barbara. "Series-Connection of Silicon Carbide MOSFET Modules using Active Gate-Drivers with dv/dt Control." Thesis, Virginia Tech, 2019. http://hdl.handle.net/10919/95938.

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This work investigates the voltage scaling feasibility of several low voltage SiC MOSFET modules operated as a single series-connected switch using active gate control. Both multilevel and two-level topologies are capable of achieving higher blocking voltages in high-power converter applications. Compared to multilevel topologies, two-level switching topologies are of interest due to less complex circuitry, higher density, and simpler control techniques. In this work, to balance the voltage between series-connected MOSFETs, device turn-off speeds are dynamically controlled on active gate-drive

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35

Jouvet, Nicolas. "Intégration hybride de transistors à un électron sur un noeud technologique CMOS." Phd thesis, INSA de Lyon, 2012. http://tel.archives-ouvertes.fr/tel-00863770.

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Cette étude porte sur l'intégration hybride de transistors à un électron (single-electron transistor, SET) dans un noeud technologique CMOS. Les SETs présentent de forts potentiels, en particulier en termes d'économies d'énergies, mais ne peuvent complètement remplacer le CMOS dans les circuits électriques. Cependant, la combinaison des composants SETs et MOS permet de pallier à ce problème, ouvrant la voie à des circuits à très faible puissance dissipée, et à haute densité d'intégration. Cette thèse se propose d'employer pour la réalisation de SETs dans le back-end-of-line (BEOL), c'est-à-dir

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36

Zhang, Zhikuan. "Source/drain engineering for extremely scaled MOSFETs /." View abstract or full-text, 2005. http://library.ust.hk/cgi/db/thesis.pl?ELEC%202005%20ZHANG.

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37

Chen, Xiangdong. "Bandgap engineering in vertical MOSFETs." Access restricted to users with UT Austin EID Full text (PDF) from UMI/Dissertation Abstracts International, 2001. http://wwwlib.umi.com/cr/utexas/fullcit?p3025006.

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38

Shen, Jian. "Double gate MOSFETs : process variations and design considerations /." View abstract or full-text, 2005. http://library.ust.hk/cgi/db/thesis.pl?ELEC%202005%20SHEN.

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39

Tamjidi, Mohammad R. "Characteristics of N-channel accumulation mode thin film polysilicon mosfets. /." Full text open access at:, 1987. http://content.ohsu.edu/u?/etd,132.

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40

Krishnamohan, Tejas. "Physics and technology of high mobility, strained germanium channel, heterostructure MOSFETs." access full-text online access from Digital Dissertation Consortium, 2006. http://libweb.cityu.edu.hk/cgi-bin/er/db/ddcdiss.pl?3219310.

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41

Lau, Mei Po Mabel. "Characterization of hot-carrier induced degradation via small-signal characteristics in mosfets /." St. Lucia, Qld, 2001. http://www.library.uq.edu.au/pdfserve.php?image=thesisabs/absthe16462.pdf.

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42

Wu, Wen. "Modeling the extrinsic resistance and capacitance of planar and non-planar MOSFETs /." View abstract or full-text, 2007. http://library.ust.hk/cgi/db/thesis.pl?ECED%202007%20WUW.

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43

Palmer, Martin John. "Investigation of high mobility pseudomorphic SiGe p channels in Si MOSFETS at low and high electric fields." Thesis, University of Warwick, 2001. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.246761.

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44

Safarjameh, Kourosh 1961. "Fast-neutron-induced resistivity change in power MOSFETs." Thesis, The University of Arizona, 1989. http://hdl.handle.net/10150/277011.

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Fast neutron irradiation tests were performed to determine the correlation of change of drain-source resistance and neutron fluence for power MOSFETs. The Objectives of the tests were: (1) to detect and measure the degradation of critical MOSFET device parameters as a function of neutron fluence (2) to compare the experimental results and the theoretical model. In general, the drain-source resistance increased from 1 Ohm to 100 Ohm after exposure to fast neutron fluence of 3 x 1014 neut/cm2, and decreased by a factor of five after high temperature annealing.

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45

Martinez, Marino Juan 1965. "The analysis of current-mirror MOSFETs for use in radiation environments." Thesis, The University of Arizona, 1988. http://hdl.handle.net/10150/276910.

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Experiments were conducted on current-mirror MOSFETs to examine their suitability for use in radiation environments. These devices, which allow low loss load current sensing (defined by a current-ratio n'), are an important element of many power integrated circuits (PICs). Total-dose testing demonstrated that the current ratio was virtually unaffected for many operating conditions. In all cases, changes were largest when sense resistance was largest and minimal when sense voltage was approximately equal to the load source's voltage. In addition, testing verified the feasibility of using sense-

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46

Modzelewski, Kenneth Paul. "DC parameter extraction technique for independent double gate MOSFETs a thesis presented to the faculty of the Graduate School, Tennessee Technological University /." Click to access online, 2009. http://proquest.umi.com/pqdweb?index=11&did=1759989211&SrchMode=1&sid=1&Fmt=6&VInst=PROD&VType=PQD&RQT=309&VName=PQD&TS=1250600320&clientId=28564.

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47

Shelley, Valerie Anderson 1957. "Validity of the Jain and Balk analytic model for two-dimensional effects in short channel MOSFETS." Thesis, The University of Arizona, 1988. http://hdl.handle.net/10150/276801.

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The Jain and Balk analytic model for two-dimensional effects in short channel MOSFETS is investigated. The effects considered are Drain Induced Barrier Lowering, DIBL, and the maximum electric field, Emax, which influences Drain Induced High Field, DIHF. A scaled short channel design is used as the basis for the investigation. Cases are numerically simulated using the MINIMOS program. DIBL and Emax are calculated using the Jain and Balk model. Model values are compared to numerical simulation values. Results show the model consistently overestimates DIBL. Also, the range for which the model cl

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48

Diawuo, Kwasi. "Buried channel delta-doped metal-oxide semiconductor field effect transistors (#delta#-doped MOSFETs)." Thesis, University of Newcastle Upon Tyne, 1997. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.361543.

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49

Dinse, Brian P. "Silicon-on-insulator MOSFETS : material, process and device characteristics /." Online version of thesis, 1994. http://hdl.handle.net/1850/12193.

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Huang, Chender 1960. "Characterization of interface trap density in power MOSFETs using noise measurements." Thesis, The University of Arizona, 1988. http://hdl.handle.net/10150/276872.

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Low-frequency noise has been measured on commercial power MOSFETs. These devices, fabricated with the VDMOS structure, exhibit a 1/f type noise spectrum. The interface state density obtained from noise measurements was compared with that obtained from the subthreshold-slope method. Reasonable agreement was found between the two measurements. The radiation effects on the noise power spectral density were also investigated. The results indicated that the noise can be attributed to the generation of interface traps near the Si-SiO₂ interface. The level of interface traps generated by radiation wa

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