Relevant bibliographies by topics / Metal Oxide Semiconductor Tin Oxide (SnO2)

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Academic literature on the topic 'Metal Oxide Semiconductor Tin Oxide (SnO2)'

Author: Grafiati
Published: 4 June 2021
Last updated: 7 September 2023

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Journal articles on the topic "Metal Oxide Semiconductor Tin Oxide (SnO2)"

1

Minami, Tadatsugu. "New n-Type Transparent Conducting Oxides." MRS Bulletin 25, no. 8 (2000): 38–44. http://dx.doi.org/10.1557/mrs2000.149.

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Most research to develop highly transparent and conductive thin films has focused on n-type semiconductors consisting of metal oxides. Historically, transparent conducting oxide (TCO) thin films composed of binary compounds such as SnO2 and In2O3 were developed by means of chemical- and physical-deposition methods. Impurity-doped SnO2 (Sb- or F-doped SnO2, e.g., SnO2:Sb or SnO2: F) and In2O3: Sn (indium tin oxide, ITO) films are in practical use. In addition to binary compounds, ternary compounds such as Cd2SnO4, CdSnO3, and CdIn2O4 were developed prior to 1980, but their TCO films have not ye
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2

Pandit, Nayeem Ahmad, and Tokeer Ahmad. "Tin Oxide Based Hybrid Nanostructures for Efficient Gas Sensing." Molecules 27, no. 20 (2022): 7038. http://dx.doi.org/10.3390/molecules27207038.

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Tin oxide as a semiconductor metal oxide has revealed great potential in the field of gas sensing due to its porous structure and reduced size. Especially for tin oxide and its composites, inherent properties such as high surface areas and their unique semiconducting properties with tunable band gaps make them compelling for sensing applications. In combination with the general benefits of metal oxide nanomaterials, the incorporation of metal oxides into metal oxide nanoparticles is a new approach that has dramatically improved the sensing performance of these materials due to the synergistic
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3

Chen, Zheng, Manuel Löber, Anna Rokicińska, et al. "Increased photocurrent of CuWO4 photoanodes by modification with the oxide carbodiimide Sn2O(NCN)." Dalton Transactions 49, no. 11 (2020): 3450–56. http://dx.doi.org/10.1039/c9dt04752b.

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4

Pakiyaraj, K., and V. Kirthika. "Annealing Effect on Nanocrystalline SnO2 Thin Films Prepared by Spray Pyrolysis Technique." Journal of Nanoscience and Technology 7, no. 3 (2021): 949–51. http://dx.doi.org/10.30799/jnst.330.21070301.

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In recent years, a transparent conducting oxide (TCO) SnO2 semiconductor have gained considerable attention due to their potential application in gas sensors. More number of studies on TCO oxide have focused on the semiconducting metal oxides in which an intensive argument is that the transparent semiconductors. The SnO2 thin films were deposited at 400 °C and then annealed at 500 °C and 600 °C and its structural, optical and electrical properties were characterized. The doping stoichiometric ratio was maintained as 4% and the resulting solution was sprayed on glass substrate which was kept at
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5

Medina, G., P. A. Stampe, R. J. Kennedy, et al. "Characterization of Tin Oxide Grown by Molecular Beam Epitaxy." MRS Proceedings 1633 (2014): 13–18. http://dx.doi.org/10.1557/opl.2014.305.

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ABSTRACTWe describe the characteristics of a series of thin film tin oxide films grown by plasma-assisted molecular beam epitaxy on r-plane sapphire substrates over a range of flux and substrate temperature conditions. A mixture of both SnO2 and SnO are detected in several films, with the amount depending on growth conditions, most particularly the substrate temperature. Electrical measurements were not possible on all samples due to roughness related issues with contacting, but at least one film exhibited p-type characteristics depending on measurement conditions, and one sample exhibited sig
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6

Malinovskaya, Tatyana D., Victor I. Sachkov, Valentina V. Zhek, and Roman A. Nefedov. "Method for Determining the Doping Efficiency of Dispersed Semiconductor Metal Oxide Materials." Key Engineering Materials 683 (February 2016): 389–94. http://dx.doi.org/10.4028/www.scientific.net/kem.683.389.

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In this paper, a method for determining the doping efficiency of dispersed semiconductor metal oxide materials is proposed proposing to use the dependences of the free charge carrier concentration, normalized to the concentration of the doping impurity (Ne spec.), on the content of this impurity. The possibilities of this method are demonstrated by the example of studying the effect of technological factors on the efficiency of doping of indium oxide with tin and doping of tin oxide with antimony. It is shown that it is impossible to achieve the concentration of free charge carriers in the ITO
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7

Deorsola, Fabio A., P. Mossino, Ignazio Amato, et al. "Gas Sensing Properties of TiO2 and SnO2 Nanopowders Obtained through Gel Combustion." Advances in Science and Technology 45 (October 2006): 1828–33. http://dx.doi.org/10.4028/www.scientific.net/ast.45.1828.

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Nanostructured semiconductor metal oxides have played a central role in the gas sensing research field, because of their high sensitivity, selectivity and low response time. Among all the processes, developed for the synthesis of nanostructured metal oxides, gel combustion seems to be the most promising route due to low-cost precursors and simplicity of the process. It combines chemical gelation and combustion, involving the formation of a gel from an acqueous solution and an exothermic redox reaction, yielding to very porous and softly agglomerated nanopowders. In this work, nanostructured ti
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8

Avis, Christophe, YounGoo Kim, and Jin Jang. "Amorphous Tin Oxide Applied to Solution Processed Thin-Film Transistors." Materials 12, no. 20 (2019): 3341. http://dx.doi.org/10.3390/ma12203341.

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The limited choice of materials for large area electronics limits the expansion of applications. Polycrystalline silicon (poly-Si) and indium gallium zinc oxide (IGZO) lead to thin-film transistors (TFTs) with high field-effect mobilities (>10 cm2/Vs) and high current ON/OFF ratios (IOn/IOff > ~107). But they both require vacuum processing that needs high investments and maintenance costs. Also, IGZO is prone to the scarcity and price of Ga and In. Other oxide semiconductors require the use of at least two cations (commonly chosen among Ga, Sn, Zn, and In) in order to obtain the amorphou
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9

Vafaei, Saeid, Vamsi Krishna Boddu, Stephen Jala, et al. "Preparation of Nanostructured Sn/Ti Oxide Hybrid Films with Terpineol/PEG-Based Nanofluids: Perovskite Solar Cell Applications." Materials 16, no. 8 (2023): 3136. http://dx.doi.org/10.3390/ma16083136.

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Tin oxide (SnO2) and titanium dioxide (TiO2) are recognized as attractive energy materials applicable for lead halide perovskite solar cells (PSCs). Sintering is one of the effective strategies for improving the carrier transport of semiconductor nanomaterials. Using the alternative metal-oxide-based ETL, nanoparticles are often used in a way that they are dispersed in a precursor liquid prior to their thin-film deposition. Currently, the creation of PSCs using nanostructured Sn/Ti oxide thin-film ETL is one of the topical issues for the development of high-efficiency PSCs. Here, we demonstrat
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10

Grigorenko, M., T. Sydorenko, E. Chernigovtsev, O. Durov, V. Poluyanska, and T. Konovalenko. "Vacuum wetting and contact interaction of some of the metallic melts with indium and tin oxides." Uspihi materialoznavstva 2021, no. 3 (2021): 109–18. http://dx.doi.org/10.15407/materials2021.03.109.

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Due to the unique combination of electric and optical properties such semiconductor oxides as tin and indium oxides are very perspective multifunctional materials for variety of microelectronic devices production. Experimental studies of these materials allow to define, for example energetic characteristics of the devices created and also to improve existing technologies of films formation, joining of electrocontacts to tin and indium oxides based materials by way of brazing which require additional wetting studies. It should be noted that data on wetting of mentioned oxides by metals are prac
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