Journal articles: 'Metal Oxide Semiconductor Tin Oxide (SnO2)'

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Minami, Tadatsugu. "New n-Type Transparent Conducting Oxides." MRS Bulletin 25, no. 8 (August 2000): 38–44. http://dx.doi.org/10.1557/mrs2000.149.

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Most research to develop highly transparent and conductive thin films has focused on n-type semiconductors consisting of metal oxides. Historically, transparent conducting oxide (TCO) thin films composed of binary compounds such as SnO2 and In2O3 were developed by means of chemical- and physical-deposition methods. Impurity-doped SnO2 (Sb- or F-doped SnO2, e.g., SnO2:Sb or SnO2: F) and In2O3: Sn (indium tin oxide, ITO) films are in practical use. In addition to binary compounds, ternary compounds such as Cd2SnO4, CdSnO3, and CdIn2O4 were developed prior to 1980, but their TCO films have not yet been used widely.

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Pandit, Nayeem Ahmad, and Tokeer Ahmad. "Tin Oxide Based Hybrid Nanostructures for Efficient Gas Sensing." Molecules 27, no. 20 (October 18, 2022): 7038. http://dx.doi.org/10.3390/molecules27207038.

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Tin oxide as a semiconductor metal oxide has revealed great potential in the field of gas sensing due to its porous structure and reduced size. Especially for tin oxide and its composites, inherent properties such as high surface areas and their unique semiconducting properties with tunable band gaps make them compelling for sensing applications. In combination with the general benefits of metal oxide nanomaterials, the incorporation of metal oxides into metal oxide nanoparticles is a new approach that has dramatically improved the sensing performance of these materials due to the synergistic effects. This review aims to comprehend the sensing mechanisms and the synergistic effects of tin oxide and its composites in achieving high selectivity, high sensitivity and rapid response speed which will be addressed with a full summary. The review further vehemently highlights the advances in tin oxide and its composites in the gas sensing field. Further, the structural components, structural features and surface chemistry involved in the gas sensing are also explained. In addition, this review discusses the SnO2 metal oxide and its composites and unravels the complications in achieving high selectivity, high sensitivity and rapid response speed. The review begins with the gas sensing mechanisms, which are followed by the synthesis methods. Further key results and discussions of previous studies on tin metal oxide and its composites are also discussed. Moreover, achievements in recent research on tin oxide and its composites for sensor applications are then comprehensively compiled. Finally, the challenges and scope for future developments are discussed.

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Chen, Zheng, Manuel Löber, Anna Rokicińska, Zili Ma, Jianhong Chen, Piotr Kuśtrowski, Hans-Jürgen Meyer, Richard Dronskowski, and Adam Slabon. "Increased photocurrent of CuWO4 photoanodes by modification with the oxide carbodiimide Sn2O(NCN)." Dalton Transactions 49, no. 11 (2020): 3450–56. http://dx.doi.org/10.1039/c9dt04752b.

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Pakiyaraj, K., and V. Kirthika. "Annealing Effect on Nanocrystalline SnO2 Thin Films Prepared by Spray Pyrolysis Technique." Journal of Nanoscience and Technology 7, no. 3 (December 13, 2021): 949–51. http://dx.doi.org/10.30799/jnst.330.21070301.

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In recent years, a transparent conducting oxide (TCO) SnO2 semiconductor have gained considerable attention due to their potential application in gas sensors. More number of studies on TCO oxide have focused on the semiconducting metal oxides in which an intensive argument is that the transparent semiconductors. The SnO2 thin films were deposited at 400 °C and then annealed at 500 °C and 600 °C and its structural, optical and electrical properties were characterized. The doping stoichiometric ratio was maintained as 4% and the resulting solution was sprayed on glass substrate which was kept at nozzle distance of 25 cm and the spray rate was 10 mL/min. The prepared pure SnO2 thin films have been characterized by different methods such as XRD, FESEM, UV-Vis NIR and EDAX analyses. It was found that the nanocrystalline SnO2 grains possesses structural features of the tetragonal rutile structure. Hence the prepared thin films are justified to be nanocrystalline and also the mean crystalline size decreased with respect to annealing temperature.

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Medina, G., P. A. Stampe, R. J. Kennedy, R. J. Reeves, G. T. Dang, A. Hyland, M. W. Allen, M. J. Wahila, L. F. J. Piper, and S. M. Durbin. "Characterization of Tin Oxide Grown by Molecular Beam Epitaxy." MRS Proceedings 1633 (2014): 13–18. http://dx.doi.org/10.1557/opl.2014.305.

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ABSTRACTWe describe the characteristics of a series of thin film tin oxide films grown by plasma-assisted molecular beam epitaxy on r-plane sapphire substrates over a range of flux and substrate temperature conditions. A mixture of both SnO2 and SnO are detected in several films, with the amount depending on growth conditions, most particularly the substrate temperature. Electrical measurements were not possible on all samples due to roughness related issues with contacting, but at least one film exhibited p-type characteristics depending on measurement conditions, and one sample exhibited significant persistent photoconductivity upon ultraviolet excitation in a metal-semiconductor-metal device structure.

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Malinovskaya, Tatyana D., Victor I. Sachkov, Valentina V. Zhek, and Roman A. Nefedov. "Method for Determining the Doping Efficiency of Dispersed Semiconductor Metal Oxide Materials." Key Engineering Materials 683 (February 2016): 389–94. http://dx.doi.org/10.4028/www.scientific.net/kem.683.389.

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In this paper, a method for determining the doping efficiency of dispersed semiconductor metal oxide materials is proposed proposing to use the dependences of the free charge carrier concentration, normalized to the concentration of the doping impurity (Ne spec.), on the content of this impurity. The possibilities of this method are demonstrated by the example of studying the effect of technological factors on the efficiency of doping of indium oxide with tin and doping of tin oxide with antimony. It is shown that it is impossible to achieve the concentration of free charge carriers in the ITO material, higher than that in ATO materials, due to the lower solubility of tin in the In2O3 lattice, as compared with the solubility of antimony in the SnO2 lattice.

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Deorsola, Fabio A., P. Mossino, Ignazio Amato, Bruno DeBenedetti, A. Bonavita, G. Micali, and G. Neri. "Gas Sensing Properties of TiO₂ and SnO₂ Nanopowders Obtained through Gel Combustion." Advances in Science and Technology 45 (October 2006): 1828–33. http://dx.doi.org/10.4028/www.scientific.net/ast.45.1828.

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Nanostructured semiconductor metal oxides have played a central role in the gas sensing research field, because of their high sensitivity, selectivity and low response time. Among all the processes, developed for the synthesis of nanostructured metal oxides, gel combustion seems to be the most promising route due to low-cost precursors and simplicity of the process. It combines chemical gelation and combustion, involving the formation of a gel from an acqueous solution and an exothermic redox reaction, yielding to very porous and softly agglomerated nanopowders. In this work, nanostructured tin oxide, SnO2, and titanium oxide, TiO2, have been synthesized through gel combustion. Powders showed nanometric particle size and high specific surface area. The so-obtained TiO2 and SnO2 nanopowders have been used as sensitive element of resistive λ sensor and ethanol sensor respectively, realized depositing films of nanopowders dispersed in water onto alumina substrates provided with Pt contacts and heater. TiO2-based sensors showed at high temperature good response, fast response time, linearity in a wide range of O2 concentration and long-term stability. SnO2-based sensors have shown high sensitivity to low concentrations of ethanol at moderate temperature.

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Avis, Christophe, YounGoo Kim, and Jin Jang. "Amorphous Tin Oxide Applied to Solution Processed Thin-Film Transistors." Materials 12, no. 20 (October 14, 2019): 3341. http://dx.doi.org/10.3390/ma12203341.

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The limited choice of materials for large area electronics limits the expansion of applications. Polycrystalline silicon (poly-Si) and indium gallium zinc oxide (IGZO) lead to thin-film transistors (TFTs) with high field-effect mobilities (>10 cm2/Vs) and high current ON/OFF ratios (IOn/IOff > ~107). But they both require vacuum processing that needs high investments and maintenance costs. Also, IGZO is prone to the scarcity and price of Ga and In. Other oxide semiconductors require the use of at least two cations (commonly chosen among Ga, Sn, Zn, and In) in order to obtain the amorphous phase. To solve these problems, we demonstrated an amorphous oxide material made using one earth-abundant metal: amorphous tin oxide (a-SnOx). Through XPS, AFM, optical analysis, and Hall effect, we determined that a-SnOx is a transparent n-type oxide semiconductor, where the SnO2 phase is predominant over the SnO phase. Used as the active material in TFTs having a bottom-gate, top-contact structure, a high field-effect mobility of ~100 cm2/Vs and an IOn/IOff ratio of ~108 were achieved. The stability under 1 h of negative positive gate bias stress revealed a Vth shift smaller than 1 V.

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Vafaei, Saeid, Vamsi Krishna Boddu, Stephen Jala, Pavan Kumar Bezawada, Nagisa Hattori, Seiho Higashi, Takashi Sugiura, and Kazuhiro Manseki. "Preparation of Nanostructured Sn/Ti Oxide Hybrid Films with Terpineol/PEG-Based Nanofluids: Perovskite Solar Cell Applications." Materials 16, no. 8 (April 16, 2023): 3136. http://dx.doi.org/10.3390/ma16083136.

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Tin oxide (SnO2) and titanium dioxide (TiO2) are recognized as attractive energy materials applicable for lead halide perovskite solar cells (PSCs). Sintering is one of the effective strategies for improving the carrier transport of semiconductor nanomaterials. Using the alternative metal-oxide-based ETL, nanoparticles are often used in a way that they are dispersed in a precursor liquid prior to their thin-film deposition. Currently, the creation of PSCs using nanostructured Sn/Ti oxide thin-film ETL is one of the topical issues for the development of high-efficiency PSCs. Here, we demonstrate the preparation of terpineol/PEG-based fluid containing both tin and titanium compounds that can be utilized for the formation of a hybrid Sn/Ti oxide ETL on a conductive substrate (F-doped SnO2 glass substrate: FTO). We also pay attention to the structural analysis of the Sn/Ti metal oxide formation at the nanoscale using a high-resolution transmission electron microscope (HR-TEM). The variation of the nanofluid composition, i.e., the concentration of tin and titanium sources, was examined to obtain a uniform transparent thin film by spin-coating and sintering processes. The maximum power conversion efficiency was obtained for the concentration condition of [SnCl2·2H2O]/[titanium tetraisopropoxide (TTIP)] = 25:75 in the terpineol/PEG-based precursor solution. Our method for preparing the ETL nanomaterials provides useful guidance for the creation of high-performance PSCs using the sintering method.

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Grigorenko, M., T. Sydorenko, E. Chernigovtsev, O. Durov, V. Poluyanska, and T. Konovalenko. "Vacuum wetting and contact interaction of some of the metallic melts with indium and tin oxides." Uspihi materialoznavstva 2021, no. 3 (December 1, 2021): 109–18. http://dx.doi.org/10.15407/materials2021.03.109.

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Due to the unique combination of electric and optical properties such semiconductor oxides as tin and indium oxides are very perspective multifunctional materials for variety of microelectronic devices production. Experimental studies of these materials allow to define, for example energetic characteristics of the devices created and also to improve existing technologies of films formation, joining of electrocontacts to tin and indium oxides based materials by way of brazing which require additional wetting studies. It should be noted that data on wetting of mentioned oxides by metals are practically absent in literature. Thus a detailed study of the interfacial interaction, adhesion and wetting of ceramic SnO2 and In2O3 materials with some pure metal melts in vacuum was performed by the sessile drop method using foto- and video- fixing including concentration, temporal and temperature dependences of contact angles. It was found that most of the pure metals studied don't wet SnO2 ceramics. However rather intense chemical interaction took place in vacuum at high temperatures in contact of some metals (Sn, Ge, In) with surface of SnO2. It was also shown the effect of the experiment temperature and hold-up time on the values of contact angles. Wetting angles for powdery pressed specimens of In2O3 in the temperature range studied don't change noticeably and vary in a narrow range. For example, for Ga wetting angles vary from about 138 to 128 deg and for Sn  125119 deg, Wetting of SnO2 surface with AgCu melt with different copper content was shown to be insufficient to use it as a brazing alloy, yet this system can be used as a basis for creating a brazing composition. Keywords: indium oxide, tin dioxide, semiconductor, wetting, contact interaction, metal melt.

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He, Ziyan, Xu Zhang, Xiaoqin Wei, Dongxiang Luo, Honglong Ning, Qiannan Ye, Renxu Wu, Yao Guo, Rihui Yao, and Junbiao Peng. "Solution-Processed Silicon Doped Tin Oxide Thin Films and Thin-Film Transistors Based on Tetraethyl Orthosilicate." Membranes 12, no. 6 (June 1, 2022): 590. http://dx.doi.org/10.3390/membranes12060590.

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Recently, tin oxide (SnO2) has been the preferred thin film material for semiconductor devices such as thin-film transistors (TFTs) due to its low cost, non-toxicity, and superior electrical performance. However, the high oxygen vacancy (VO) concentration leads to poor performance of SnO2 thin films and devices. In this paper, with tetraethyl orthosilicate (TEOS) as the Si source, which can decompose to release heat and supply energy when annealing, Si doped SnO2 (STO) films and inverted staggered STO TFTs were successfully fabricated by a solution method. An XPS analysis showed that Si doping can effectively inhibit the formation of VO, thus reducing the carrier concentration and improving the quality of SnO2 films. In addition, the heat released from TEOS can modestly lower the preparation temperature of STO films. By optimizing the annealing temperature and Si doping content, 350 °C annealed STO TFTs with 5 at.% Si exhibited the best device performance: Ioff was as low as 10−10 A, Ion/Ioff reached a magnitude of 104, and Von was 1.51 V. Utilizing TEOS as an Si source has a certain reference significance for solution-processed metal oxide thin films in the future.

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Park, Myeongjin, Jeongkyun Roh, Jaehoon Lim, Hyunkoo Lee, and Donggu Lee. "Double Metal Oxide Electron Transport Layers for Colloidal Quantum Dot Light-Emitting Diodes." Nanomaterials 10, no. 4 (April 11, 2020): 726. http://dx.doi.org/10.3390/nano10040726.

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The performance of colloidal quantum dot light-emitting diodes (QD-LEDs) have been rapidly improved since metal oxide semiconductors were adopted for an electron transport layer (ETL). Among metal oxide semiconductors, zinc oxide (ZnO) has been the most generally employed for the ETL because of its excellent electron transport and injection properties. However, the ZnO ETL often yields charge imbalance in QD-LEDs, which results in undesirable device performance. Here, to address this issue, we introduce double metal oxide ETLs comprising ZnO and tin dioxide (SnO2) bilayer stacks. The employment of SnO2 for the second ETL significantly improves charge balance in the QD-LEDs by preventing spontaneous electron injection from the ZnO ETL and, as a result, we demonstrate 1.6 times higher luminescence efficiency in the QD-LEDs. This result suggests that the proposed double metal oxide ETLs can be a versatile platform for QD-based optoelectronic devices.

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Prayogi, Soni, and Marza Ikhsan Marzuki. "The Effect of Addition of SnO2 Doping on The Electronic Structure of TiO2 Thin Film as Photo-Anode in DSSC Applications." Journal of Emerging Supply Chain, Clean Energy, and Process Engineering 1, no. 1 (September 6, 2022): 1–6. http://dx.doi.org/10.57102/jescee.v1i1.3.

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Photoanode is a component of the dye-sensitized solar cell (DSSCc) which is synthesized from metal oxide semiconductor material with nanoparticle size deposited on transparent conductive glass. TiO2 powder was synthesized by mixing 20 mL of Titanium (III) chloride (TiCl3) with 100 mL of the equator and stirred for 1 hour. TiO2-SnO2 thin films have been successfully synthesized using the coprecipitation method and coated on ITO (Indium Tin Oxide) substrate by doctor-blade technique. The structure and morphology of the films were investigated by XRD and SEM respectively. The analysis of optical characteristics shows that the absorbance of TiO2 photoanode is in the wavelength range of 300-600 nm while SnO2 is in the wavelength range of 300-870 nm. The results showed that the synthesized film with SnO2 had a stronger anatase formation than the film with pure TiO2. Finally, incorporating SnO2 into the TiO2 matrix is an effective strategy to improve the overall properties of solar cells in future applications

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Thankaian, Regin Das, Meena Muthukrishnan, Senthil Muthu Kumar Thiagamani, Suchart Siengchin, and Sanjay Manvikere Rangappa. "Impact of metal doping and codoping on the electrical and optical behavior of tin oxide nano particles." Nanomaterials and Energy 11, no. 3-4 (December 1, 2022): 1–8. http://dx.doi.org/10.1680/jnaen.23.00010.

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Metal oxide semiconductors (MOS) with distinctive optical and electrical properties are required by the modern electronics industry. In this research it was found that doping of transition and rare-earth metals is suitable for tuning the optical bandgap and dielectric parameters of SnO2 Nanoparticles to meet the requirement for high conductive semiconductors Via one-step hydrothermal synthesis Doping of Sm causes SnO2NP to have a narrower bandgap (2.54 eV) than pure SnO2NPs (3.36 eV), and increased conductivity at higher frequencies and temperature, which is crucial for the potential applications like light-emitting diodes, biological labels, optoelectronic devices, and other technologies. The particle size of the doped and co-doped sample was found to be smaller than pure SnO2 which effectively pronounced the quantum confinement effect in these metal oxides. Co-doping of Sm-Cu ions in the SnO2 lattice was done for the first time to increase the dielectric strength, with absorption shift towards visible blue region suggest the use of this particular sample for photocatalytic application.

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Kumar, Rahul, Mamta, Raman Kumari, and Vidya Nand Singh. "SnO2-Based NO2 Gas Sensor with Outstanding Sensing Performance at Room Temperature." Micromachines 14, no. 4 (March 25, 2023): 728. http://dx.doi.org/10.3390/mi14040728.

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The controlled and efficient formation of oxygen vacancies on the surface of metal oxide semiconductors is required for their use in gas sensors. This work addresses the gas-sensing behaviour of tin oxide (SnO2) nanoparticles for nitrogen oxide (NO2), NH3, CO, and H2S detection at various temperatures. Synthesis of SnO2 powder and deposition of SnO2 film is conducted using sol-gel and spin-coating methods, respectively, as these methods are cost-effective and easy to handle. The structural, morphological, and optoelectrical properties of nanocrystalline SnO2 films were studied using XRD, SEM, and UV-visible characterizations. The gas sensitivity of the film was tested by a two-probe resistivity measurement device, showing a better response for the NO2 and outstanding low-concentration detection capacity (down to 0.5 ppm). The anomalous relationship between specific surface area and gas-sensing performance indicates the SnO2 surface’s higher oxygen vacancies. The sensor depicts a high sensitivity at 2 ppm for NO2 with response and recovery times of 184 s and 432 s, respectively, at room temperature. The result demonstrates that oxygen vacancies can significantly improve the gas-sensing capability of metal oxide semiconductors.

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Rossignol, Jerome, and Didier Stuerga. "Metal Oxide Nanoparticles Obtained by Microwave Synthesis and Application in Gas Sensing by Microwave Transduction." Key Engineering Materials 605 (April 2014): 299–302. http://dx.doi.org/10.4028/www.scientific.net/kem.605.299.

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In literature, many papers describe the applications of semiconductor as sensitive material in sensor field. The gas sensor using tin oxide requires a strictly controlled high operating temperature in order to detect both reducing and oxidizing gases. The semiconductor nanoparticles, with their high specific surface area, increase the gas sensing performance. The originality of this work is to valorize the nanoparticle of metal oxide like SnO2, TiO2 obtained by microwave thermohydrolysis synthesis, using a gas sensing microwave transduction. The present synthesis is to prepare metal oxide nanocrystalline powder with a high surface area by microwave-induced thermohydrolysis. We propose to study the influence of the metal oxide nanoparticle, as a sensitive layer, in gas sensing measurement. The pollutant is added into an argon flow (dynamic regim). This work highlights a specific sensor response to each ammonia concentration at room temperature. It shows a quasi-linear relationship between the set of points of the real part of the response and the ammonia concentration. The authors are currently working on these issues as well as the interaction mechanism between adsorbed gas molecules and metal oxide films.

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Liu, Yuchang, Hongjie Liu, Anjie Hu, Yingmei Wei, Wenchao Ou, Xianwang Deng, Shaopeng Wang, and Kefu Yu. "An efficient low-temperature triethylamine gas sensor based on 2D ultrathin SnO₂ nanofilms." Semiconductor Science and Technology 36, no. 12 (November 16, 2021): 125022. http://dx.doi.org/10.1088/1361-6641/ac2ddf.

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Abstract The quest to develop inexpensive chemical sensing materials that are energy-efficient, portable, and with efficient performance lies at the center of next-generation sensor development. Owing to their low cost, easy preparation, high response, and smooth integration with electronic circuits, metal oxide semiconductors have received particular attention. Yet, metal oxide semiconductor based sensors often suffer from high power consumption due to their high operating temperature, which hinders them from practical applications. To solve this problem, herein, we proposed ultrathin sub-4 nm SnO2 films synthesized by a facile tunable hydrothermal method. Benefiting immensely from its two-dimensional anisotropic nature, the proposed SnO2 ultra-thin film exhibits a large specific area of 94.41 m2 g−1 and possesses surface oxygen vacancies. The obtained sample was practically applied as a gas sensor; the results indicate that the ultra-thin SnO2 film based sensor exhibits the highest sensitivity to triethylamine (19.2 at 100 ppm), outstanding repeatability, and excellent sensing selectivity at a low working temperature of 150 °C.

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Varela, J. A., L. A. Perazolli, E. Longo, E. R. Leite, and J. A. Cerri. "Effect of atmosphere and dopants on sintering of SnO2." Science of Sintering 34, no. 1 (2002): 23–31. http://dx.doi.org/10.2298/sos0201023v.

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Tin oxide is an n type semiconductor material with a high covalent behavior. Mass transport in this oxide depends on the surface state promoted by atmosphere or by the solid solution of aliovalent oxide doping. The sintering and grain growth of this type of oxide powder is then controlled by atmosphere and by extrinsic oxygen vacancy formation. For pure SnO2 powder the surface state depends only on the interaction of atmosphere molecules with the SnO2 surface. Inert atmosphere like argon or helium promotes oxygen vacancy formation at the surface due to reduction of SnO2 to SnO at the surface and liberation of oxygen molecules forming oxygen vacancies. As a consequence surface diffusion is enhanced leading to grain coarsening but no densification. Oxygen atmosphere inhibits SnO2 reduction by decreasing the surface oxygen vacancy concentration. Addition of dopants with lower valence at the sintering temperature creates extrinsic charged oxygen vacancies that promote mass transport at the grain boundary leading to densification and grain growth of this polycrystalline oxide.

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do Nascimento, Jéssica Luisa Alves, Lais Chantelle, Iêda Maria Garcia dos Santos, André Luiz Menezes de Oliveira, and Mary Cristina Ferreira Alves. "The Influence of Synthesis Methods and Experimental Conditions on the Photocatalytic Properties of SnO2: A Review." Catalysts 12, no. 4 (April 11, 2022): 428. http://dx.doi.org/10.3390/catal12040428.

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Semiconductors based on transition metal oxides represent an important class of materials used in emerging technologies. For this, the performance of these materials strongly depends on the size and morphology of particles, surface charge characteristics, and the presence of bulk and surface defects that are influenced by the synthesis method and the experimental conditions the materials are prepared. In this context, the present review aims to report the importance of choosing the synthesis methods and experimental conditions to modify structural, morphological, and electronic characteristics of semiconductors, more specifically, tin oxide (SnO2), since these parameters may be a determinant for better performance in various applications, including photocatalysis. SnO2 is an n-type semiconductor with a band gap between 3.6 and 4.0 eV, whose intrinsic characteristics are responsible for its electrical conductivity, good optical characteristics, high thermal stability, and other qualities. Such characteristics have provided excellent results in advanced oxidative processes, i.e., heterogeneous photocatalysis applications. This process involves semiconductors in the production of hydroxyl radicals via activation by light absorption, and it is considered as an emerging and promising technology for domestic-industrial wastewater treatment. In our review article, we focused on the photodegradation of different organic dyes and types of persistent organic pollutants using SnO2-based photocatalysts, and how the efficiency of these materials can be impacted by synthesis methods and experimental conditions employed to prepare them.

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Shaposhnik, Alexey V., Dmitry A. Shaposhnik, Sergey Yu Turishchev, Olga A. Chuvenkova, Stanislav V. Ryabtsev, Alexey A. Vasiliev, Xavier Vilanova, Francisco Hernandez-Ramirez, and Joan R. Morante. "Gas sensing properties of individual SnO2 nanowires and SnO2 sol–gel nanocomposites." Beilstein Journal of Nanotechnology 10 (July 8, 2019): 1380–90. http://dx.doi.org/10.3762/bjnano.10.136.

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This work is an investigation of the properties of semiconductor materials based on metal oxides, their catalytic properties, and their application as gas sensors, which were shown to exhibit high sensitivity, stability, and selectivity to target gases. The aim of this work is the comparison of gas sensing properties of tin dioxide in the form of individual nanowires and nanopowders obtained by sol–gel synthesis. This comparison is necessary because the traditional synthesis procedures of small particle, metal oxide materials seem to be approaching their limit. Because of this, there is increasing interest in the fabrication of functional materials based on nanowires, i.e., quasi-one-dimensional objects. In this work, nanocrystalline tin dioxide samples with different morphology were synthesized. The gas-transport method was used for the fabrication of well-faceted wire-like crystals with diameters ranging between 15–100 nm. The sol–gel method allowed us to obtain fragile gels from powders with grain sizes of about 5 nm. By means of X-ray photoelectron spectroscopy (XPS) it was proven that the nanowires contain considerably smaller amounts of hydroxy groups compared to the nanopowders. This leads to a decrease in the parasitic sensitivity of the sensing materials to humidity. In addition, we demonstrated that the nanowires are characterized by a nearly single-crystalline structure, ensuring higher stability of the sensor response due to the unlikelihood of sample recrystallization. The results from the ammonia detection experiments showed that the ratio of the sensor response to the surface area exhibits similar values for both the individual nanowire and nanopowders-based sensor materials.

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Abdul-Hamead, Alaa A. "A study of the Zn:Sn mixing ratio effect on the gas detector properties." Iraqi Journal of Physics (IJP) 13, no. 27 (February 4, 2019): 50–62. http://dx.doi.org/10.30723/ijp.v13i27.263.

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Semiconductor-based metal oxide gas detector of five mixed from zinc chloride Z and tin chloride S salts Z:S ratio 0, 25, 50, 75 and 100% were fabricated on glass substrate by a spray pyrolysis technique. With thickness were about 0.2 ±0.05 μm using water soluble as precursors at a glass substrate temperature 500 ºC±5, 0.05 M, and their gas sensing properties toward CH4, LPG and H2S gas at different concentration (10, 100, 1000 ppm) in air were investigated at room temperature which related with the petroleum refining industry.Furthermore structural and morphology properties were scrutinize. Results shows that the mixing ratio affect the composition of formative oxides were (ZnO, Zn2SnO4, Zn2SnO4+ZnSnO3, ZnSnO3, SnO2) ratios mentioned in the above respectively, and related with the sensitivity of the reduction tested gases, best sensitivity was for H2S gas, have sensitivity about 80.61% and a response time of 10 seconds for the binary oxides and 89.57% and a response time of (5-2) seconds for the mixed ternary oxides.

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Panthoko, Norbert Egan Christo, Fairuz Septiningrum, Akhmad Herman Yuwono, Eka Nurhidayah, Fakhri Akbar Maulana, Nofrijon Sofyan, Donanta Dhaneswara, et al. "Synthesis of Tin Oxide Nanocrystallites with Various Calcination Temperatures using Co-Precipitation Method with Local Tin Chloride Precursor." Metalurgi 38, no. 1 (June 6, 2023): 9. http://dx.doi.org/10.55981/metalurgi.2023.687.

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Indonesia is one of the largest tin metal producers in the world, and one of its derivative products is tin chloride (SnCl4). This material has been used as a raw ingredient for the production of organotin compounds such as methyltin mercaptide for PVC (polyvinyl chloride) plastic industry as a heat stabilizer. On the other hand, this precursor can be used to synthesize SnO2 nanomaterials, which have other strategic potentials, including photocatalysts and solar cell applications. In this study, the synthesis of SnO2 nanocrystallites was carried out using a local tin chloride precursor via the co-precipitation method, followed by a calcination process at temperatures of 300, 400, 500, and 600 °C, for further usage as an ETL (electron transport layer) in a PSC (perovskite solar cell) device. The basic properties characterization was carried out using XRD (X-ray diffraction), ultraviolet-visible (UV-Vis) spectroscopy, and SEM (scanning electron microscopy), while the photocurrent-voltage (I-V) curve photovoltaic performance of the device was performed using a semiconductor parameter analyzer. The characterization results showed that increasing the calcination temperature from 300 to 600 °C increased the average crystallite size from 1.19 to 13.75 nm and decreased the band gap energy from 3.57 to 3.10 eV. The highest PCE (power conversion efficiency) was obtained from the device fabricated with SnO2 nanocrystallites calcined at a temperature of 300 °C, which was 0.0024%. This result was obtained due to the highest transmittance of this sample as compared to others; the higher the transmittance, the better the performance of the ETL, which in turn increased the overall efficiency of the PSC

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Vojisavljević, Katarina, Slavica M. Savić, Milica Počuča-Nešić, Aden Hodžić, Manfred Kriechbaum, Vesna Ribić, Aleksander Rečnik, Jelena Vukašinović, Goran Branković, and Veljko Djokić. "KIT-5-Assisted Synthesis of Mesoporous SnO2 for High-Performance Humidity Sensors with a Swift Response/Recovery Speed." Molecules 28, no. 4 (February 12, 2023): 1754. http://dx.doi.org/10.3390/molecules28041754.

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Developing highly efficient semiconductor metal oxide (SMOX) sensors capable of accurate and fast responses to environmental humidity is still a challenging task. In addition to a not so pronounced sensitivity to relative humidity change, most of the SMOXs cannot meet the criteria of real-time humidity sensing due to their long response/recovery time. The way to tackle this problem is to control adsorption/desorption processes, i.e., water-vapor molecular dynamics, over the sensor’s active layer through the powder and pore morphology design. With this in mind, a KIT-5-mediated synthesis was used to achieve mesoporous tin (IV) oxide replica (SnO2-R) with controlled pore size and ordering through template inversion and compared with a sol-gel synthesized powder (SnO2-SG). Unlike SnO2-SG, SnO2-R possessed a high specific surface area and quite an open pore structure, similar to the KIT-5, as observed by TEM, BET and SWAXS analyses. According to TEM, SnO2-R consisted of fine-grained globular particles and some percent of exaggerated, grown twinned crystals. The distinctive morphology of the SnO2-R-based sensor, with its specific pore structure and an increased number of oxygen-related defects associated with the powder preparation process and detected at the sensor surface by XPS analysis, contributed to excellent humidity sensing performances at room temperature, comprised of a low hysteresis error (3.7%), sensitivity of 406.8 kΩ/RH% and swift response/recovery speed (4 s/6 s).

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Gnisci, Andrea, Antonio Fotia, Lucio Bonaccorsi, and Andrea Donato. "Effect of Working Atmospheres on the Detection of Diacetyl by Resistive SnO2 Sensor." Applied Sciences 12, no. 1 (December 31, 2021): 367. http://dx.doi.org/10.3390/app12010367.

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Nanostructured metal oxide semiconductors (MOS) are considered proper candidates to develop low cost and real-time resistive sensors able to detect volatile organic compounds (VOCs), e.g., diacetyl. Small quantities of diacetyl are generally produced during the fermentation and storage of many foods and beverages, conferring a typically butter-like aroma. Since high diacetyl concentrations are undesired, its monitoring is fundamental to identify and characterize the quality of products. In this work, a tin oxide sensor (SnO2) is used to detect gaseous diacetyl. The effect of different working atmospheres (air, N2 and CO2), as well as the contemporary presence of ethanol vapors, used to reproduce the typical alcoholic fermentation environment, are evaluated. SnO2 sensor is able to detect diacetyl in all the analyzed conditions, even when an anaerobic environment is considered, showing a detection limit lower than 0.01 mg/L and response/recovery times constantly less than 50 s.

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Ullah, Ata, Lutfur Rahman, Syed Zajif Hussain, Muhammad Bilal Yazdani, Asim Jilani, Dayum Iqbal Khan, Musadiq Zeshan Nasir, Waheed S. Khan, Irshad Hussain, and Asma Rehman. "Tin Oxide Supported on Nanostructured MnO2 as Efficient Catalyst for Nitrophenol Reduction: Kinetic Analysis and Their Application as Heterogeneous Catalyst." Materials Innovations 02, no. 03 (2022): 83–91. http://dx.doi.org/10.54738/mi.2022.2303.

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Recently, metal oxides-based have been widely used for catalytic reduction of nitro-aromatic compounds, which are notorious for their carcinogenic nature. The current study reports Sn-doped MnO2 as an efficient catalyst for the reduction of 4-nitrophenol (4-NP) to 4-aminophenol (4-AP). The FE-SEM characterization of SnO2-doped MnO2 revealed the diffused flower-like morphology. Further, the XPS survey scans were performed to investigate the binding energies, oxidation states, and elemental compositions of both MnO2 and Sn-doped MnO2. Kinetics analysis revealed that the catalytic reduction (> 98.8%) of 4-NP into 4-AP by Sn-doped MnO2 in the presence of NaBH4 occurs within four min, following pseudo-first order kinetics. Importantly, no observable deactivation of catalytic efficiency was noticed even after five cycles. Our strategy of loading SnO2 on the surface of semiconductor offers a versatile approach to enhance the catalytic performance, stability, and which may further promote their practical industrial application.

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26

Gómez-Suárez, Jaime, Patricia Arroyo, María Cerrato-Álvarez, Esther Hontañón, Sergio Masa, Philippe Menini, Lionel Presmanes, Raimundo Alfonso, Eduardo Pinilla-Gil, and Jesús Lozano. "Development and Field Validation of Low-Cost Metal Oxide Nanosensors for Tropospheric Ozone Monitoring in Rural Areas." Chemosensors 10, no. 11 (November 14, 2022): 478. http://dx.doi.org/10.3390/chemosensors10110478.

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This work describes the technical features and the performance of two different types of metal-oxide semiconductor sensors, based on ZnO:Ga thin films and SnO2-G nanofibrous layers, for tropospheric ozone monitoring in ambient air. These nanostructures were tested and compared with commercial metal-oxide semiconductor sensors under controlled laboratory conditions and in a field campaign during summer 2021 in Monfragüe National Park (western Spain). The paper also details the design of the electronic device developed for this purpose. A machine learning algorithm based on Support Vector Regression (SVR) allowed the conversion of the resistive values into ozone concentration, which was evaluated afterward. The results showed that the manufactured sensors performed similarly to the commercial sensors in terms of R2 (0.94 and 0.95) and RMSE (5.21 and 4.83 μg∙m−3). Moreover, a novel uncertainty calculation based on European guides for air quality sensor testing was conducted, in which the manufactured sensors outperformed the commercial ones.

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OTERO, LUIS, HIROYUKI OSORA, WEIJIN LI, and MARYE ANNE FOX. "Photosensitization of Thin SnO2 Nanocrystalline Semiconductor Film Electrodes with Metalloporphyrins and Alkyl-substituted Metalloporphyrins." Journal of Porphyrins and Phthalocyanines 02, no. 02 (March 1998): 123–31. http://dx.doi.org/10.1002/(sici)1099-1409(199803/04)2:2<123::aid-jpp56>3.0.co;2-u.

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Modest fill factors (~0.2) and efficiencies for sensitized photocurrent generation are observed with porphyrins adsorbed to saturation on a nanocrystalline SnO 2 thin film employed as the working electrode in a photoelectrochemical cell. No dye aggregation is observed at the metal oxide/adsorbate interface, and no advantage in the photosensitization efficiency is seen with two porphyrins that exhibit a stable liquid crystalline phase over another porphyrin that does not.

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Vasiliev, Alexey, Andrey Varfolomeev, Ivan Volkov, Nikolay Simonenko, Pavel Arsenov, Ivan Vlasov, Victor Ivanov, et al. "Reducing Humidity Response of Gas Sensors for Medical Applications: Use of Spark Discharge Synthesis of Metal Oxide Nanoparticles." Sensors 18, no. 8 (August 8, 2018): 2600. http://dx.doi.org/10.3390/s18082600.

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The application of gas sensors in breath analysis is an important trend in the early diagnostics of different diseases including lung cancer, ulcers, and enteric infection. However, traditional methods of synthesis of metal oxide gas-sensing materials for semiconductor sensors based on wet sol-gel processes give relatively high sensitivity of the gas sensor to changing humidity. The sol-gel process leading to the formation of superficial hydroxyl groups on oxide particles is responsible for the strong response of the sensing material to this factor. In our work, we investigated the possibility to synthesize metal oxide materials with reduced sensitivity to water vapors. Dry synthesis of SnO2 nanoparticles was implemented in gas phase by spark discharge, enabling the reduction of the hydroxyl concentration on the surface and allowing the production of tin dioxide powder with specific surface area of about 40 m2/g after annealing at 610 °C. The drop in sensor resistance does not exceed 20% when air humidity increases from 40 to 100%, whereas the response to 100 ppm of hydrogen is a factor of 8 with very short response time of about 1 s. The sensor response was tested in mixtures of air with hydrogen, which is the marker of enteric infections and the marker of early stage fire, and in a mixture of air with lactate (marker of stomach cancer) and ammonia gas (marker of Helicobacter pylori, responsible for stomach ulcers).

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Qiu, Mei Yan. "Investigation on the Gas Sensing Properties of ZnO Thin Films." Applied Mechanics and Materials 685 (October 2014): 144–48. http://dx.doi.org/10.4028/www.scientific.net/amm.685.144.

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ZnO is an important sensitive semiconductor gas material, it belongs to surface-controlled gas sensors, which has been developed as early as in the 60s. Compare to another two series of metal oxide gas sensing materials SnO2 and Fe2O3, ZnO is more stable. But its sensitivity is lower and its working temperature is higher, moreover, its selectivity isn’t good[1]. Therefore, the improvement of ZnO gas sensitive materials mainly focuses on raising sensitivity, improving selectivity, lowering temperature and other aspects of the work.ZnO films have a certain potential market and good industrical prospect. With the rapid deep development of the research, the application of ZnO thin film technology will continue to permeate into many kinds of areas.Including production and life. At present,these methods that have been reported such as precious metals, rare earth doped oxide composite doped, surface modification have achieved good progress[2~5].

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30

Mehrabi, Pouria, Justin Hui, Sajjad Janfaza, Allen O’Brien, Nishat Tasnim, Homayoun Najjaran, and Mina Hoorfar. "Fabrication of SnO2 Composite Nanofiber-Based Gas Sensor Using the Electrospinning Method for Tetrahydrocannabinol (THC) Detection." Micromachines 11, no. 2 (February 12, 2020): 190. http://dx.doi.org/10.3390/mi11020190.

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This paper presents the development of a metal oxide semiconductor (MOS) sensor for the detection of volatile organic compounds (VOCs) which are of great importance in many applications involving either control of hazardous chemicals or noninvasive diagnosis. In this study, the sensor is fabricated based on tin dioxide (SnO2) and poly(ethylene oxide) (PEO) using electrospinning. The sensitivity of the proposed sensor is further improved by calcination and gold doping. The gold doping of composite nanofibers is achieved using sputtering, and the calcination is performed using a high-temperature oven. The performance of the sensor with different doping thicknesses and different calcination temperatures is investigated to identify the optimum fabrication parameters resulting in high sensitivity. The optimum calcination temperature and duration are found to be 350 °C and 4 h, respectively and the optimum thickness of the gold dopant is found to be 10 nm. The sensor with the optimum fabrication process is then embedded in a microchannel coated with several metallic and polymeric layers. The performance of the sensor is compared with that of a commercial sensor. The comparison is performed for methanol and a mixture of methanol and tetrahydrocannabinol (THC) which is the primary psychoactive constituent of cannabis. It is shown that the proposed sensor outperforms the commercial sensor when it is embedded inside the channel.

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31

Krik, Soufiane, Andrea Gaiardo, Matteo Valt, Barbara Fabbri, Cesare Malagù, Giancarlo Pepponi, Pierluigi Bellutti, and Vincenzo Guidi. "First-Principles Study of Electronic Conductivity, Structural and Electronic Properties of Oxygen-Vacancy-Defected SnO2." Journal of Nanoscience and Nanotechnology 21, no. 4 (April 1, 2021): 2633–40. http://dx.doi.org/10.1166/jnn.2021.19116.

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The use of computer simulations has become almost essential for prediction and interpretation of device's performance. In gas sensing field, the simulation of specific conditions, which determine the physical-chemical properties of widely used metal oxide semiconductors, can be used to investigate the performance of gas sensors based on these kinds of materials. The aim of this work was to evaluate the physical-chemical properties of tin dioxide employed for environmental and health gas sensing application and to investigate the influence of oxygen vacancies on its properties by means of density functional theory. Two samples, having different concentration of oxygen vacancies, were deeply studied in terms of their structural, electronic and electrical properties. It was proved the influence of oxygen vacancies on lattice parameter. By increasing oxygen vacancies concentration, the increased number of impurity states took these closer to the conduction band minimum, which can lead to an easier adsorption process of oxygen species and their availability to be exchanges with the molecules of the target gases. In this way a reduction of the operating temperature can be observed, thus reducing the power consumption of devices, while keeping the catalytic performance of the material.

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32

Furst, Leonardo, Manuel Feliciano, Laercio Frare, and Getúlio Igrejas. "A Portable Device for Methane Measurement Using a Low-Cost Semiconductor Sensor: Development, Calibration and Environmental Applications." Sensors 21, no. 22 (November 10, 2021): 7456. http://dx.doi.org/10.3390/s21227456.

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Methane is a major greenhouse gas and a precursor of tropospheric ozone, and most of its sources are linked to anthropogenic activities. The sources of methane are well known and its monitoring generally involves the use of expensive gas analyzers with high operating costs. Many studies have investigated the use of low-cost gas sensors as an alternative for measuring methane concentrations; however, it is still an area that needs further development to ensure reliable measurements. In this work a low-cost platform for measuring methane within a low concentration range was developed and used in two distinct environments to continuously assess and improve its performance. The methane sensor was the Figaro TGS2600, a metal oxide semiconductor (MOS) based on tin dioxide (SnO2). In a first stage, the monitoring platform was applied in a small ruminant barn after undergoing a multi-point calibration. In a second stage, the system was used in a wastewater treatment plant together with a multi-gas analyzer (Gasera One Pulse). The calibration of low-cost sensor was based on the relation of the readings of the two devices. Temperature and relative humidity were also measured to perform corrections to minimize the effects of these variables on the sensor signal and an active ventilation system was used to improve the performance of the sensor. The system proved to be able to measure low methane concentrations following reliable spatial and temporal patterns in both places. A very similar behavior between both measuring systems was also well noticeable at WWTP. In general, the low-cost system presented good performance under several environmental conditions, showing itself to be a good alternative, at least as a screening monitoring system.

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Anand, T. Joseph Sahaya, and Mohd Zaidan. "Electro Synthesised NiTe₂ Thin Films with the Influence of Additives." Advanced Materials Research 925 (April 2014): 159–63. http://dx.doi.org/10.4028/www.scientific.net/amr.925.159.

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Solar cell is one of the promising alternative green energy sources that can provide free electricity when sunlight is converted. The absorbent materials and their synthesis methods are subject of interest mainly due to solar panel installation cost despite of free electricity generated. The well-known silicon solar cells made, either amorphous or polycrystalline are good in conversion efficiency up to 17%, but their high cost make the researchers to look for alternate materials. Semiconducting materials in thin film form such as InP, SnO2 and ZnO are being studied as the alternative materials, but are not commercialised due to their poor conversion efficiency. Another group of semiconductor compounds known as transition metal chalcogenides (TMC) have been developed to be used as the absorbent materials. Consisting of transition metals and chalcogenides (S, Se and Te), they show promising solar absorbent properties such as semiconducting band gap, well adhesion to substrate and good conversion with better cost-effective. There are many TMC compounds synthesised, including copper indium selenide (CIS), ZnTe2, CdSe etc. Nickel, one of the transition metals synthesised with chalcogenides are referred as nickel chalcogenides. There are many possible combinations of nickel chalcogenides such as NiS2, NiSe, NiSe2 and Ni3Se2. The combination of nickel and telluride are the fewest being observed due to the nature of tellurium that is poorly-adhesive onto the substrate. Therefore, NiTe2 thin film is being electro-synthesised onto the indium tin oxide (ITO) coated glass substrates and their properties are studied. The additives are being used to improve the adhesion between the film and substrate. Cyclic voltammetry experiments have been done prior to electrodeposition in order to get the electrodeposition potential range where the observable reduction range is between-0.9-(-1.1) V. The electrodeposition is carried out using the potentials in the reduction region, producing the well-adherent, well-distributed and dark-coloured thin films.

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Ovodok, E., V. Kormosh, V. Bilanych, and M. Ivanovskaya. "Semiconductor Metal Oxides Doped with Gold Nanoparticles for Use in Acetone Gas Sensors." Journal of Physics: Conference Series 2315, no. 1 (July 1, 2022): 012018. http://dx.doi.org/10.1088/1742-6596/2315/1/012018.

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Abstract The effect of nanosized gold particles on the adsorption-sensitive properties of SnO2–Au sensors under the detection of acetone vapors has been studied. Different techniques for the preparation of SnO2–Au nanocomposites with an average Au particle size of 2 nm were applied. It has been found that a fivefold increase in the sensor response to acetone vapors and threshold sensitivity (C lim) of 0.1 ppm are achieved by adding gold to tin dioxide in the colloidal form during synthesis. While adding gold in ion form (Au (III)) leads to a growth of the sensor response to acetone vapors by 2.7 times and defines C lim of 0.2 ppm. The slope of the calibration curves of the SnO2–Au sensors allows registering acetone vapors at concentrations ranging from C lim to 5 ppm. This concentration range can be used for express diagnostics in diabetes. The enhanced sensitivity of SnO2–Au sensors to acetone vapors can be explained by an increase in the adsorption-catalytic activity of tin ions as a result of the modifying effect of sulfate groups and the envolving of highly dispersed gold in the adsorption – catalytic process of oxidation of acetone molecules.

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35

Patil, G. E., D. D. Kajale, V. B. Gaikwad, and G. H. Jain. "Spray Pyrolysis Deposition of Nanostructured Tin Oxide Thin Films." ISRN Nanotechnology 2012 (July 31, 2012): 1–5. http://dx.doi.org/10.5402/2012/275872.

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Nanostructured SnO2 thin films were grown by the chemical spray pyrolysis (CSP) method. Homemade spray pyrolysis technique is employed to prepare thin films. SnO2 is wide bandgap semiconductor material whose film is deposited on glass substrate using aqueous solution of SnCl4·5H2O as a precursor. XRD (X-ray diffraction), UV (ultraviolet visible spectroscopy), FESEM (field emission scanning electron microscopy), and EDS (energy dispersive spectroscopy) analysis are done for structural, optical, surface morphological, and compositional analysis. XRD analysis shows polycrystalline nature of samples with pure phase formation. Crystallite size calculated from diffraction peaks is 29.92 nm showing nanostructured thin films. FESEM analysis shows that SnO2 thin film contains voids with nanoparticles. EDS analysis confirms the composition of deposited thin film on glass substrate. UV-visible absorption spectra show that the bandgap of SnO2 thin film is 3.54 eV. Bandgap of SnO2 thin film can be tuned that it can be used in optical devices.

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36

Akinsola, S. I., K. S. Adedayo, A. B. Alabi, D. B. Olanrewaju, A. A. Ajayi, and O. A. Babalola. "Spray Pyrolysed Nanostructured Gold-Doped Tin Oxide (Auto) Thin Films." Journal of Applied Sciences and Environmental Management 25, no. 4 (October 8, 2021): 567–72. http://dx.doi.org/10.4314/jasem.v25i4.12.

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Nanostructured SnO2 thin films were grown by the chemical spray pyrolysis (CSP) method. Homemade spray pyrolysis technique is employed to prepare thin films. SnO2 is wide band gap semiconductor material whose film is deposited on glass substrate. A gold nanoparticle-doped tin oxide thin film (AuTO) was also prepared. UV-VIS (ultraviolet visible) spectroscopy and four-point probe analysis are done for optical and electrical analysis. UV-Visible absorption spectra show that the band gap of SnO2 thin film is 3.78 eV and 3.82 eV for AuTO. Band gap of SnO2 thin film can be tuned that it can be used in optical devices. The films have transmittance increases (to about 60%) and the absorbance decreases in the visible region of the electromagnetic spectrum. The electrical conductivity of the Tin Oxide is enhanced by functionalizing with the Gold nanoparticles. It is higher than that of the Tin oxide only; 0.77 x 10-2 (Ohm cm)-1 and 3.55 x 10-2 (Ohm cm)-1 for SnO2 and AuTO respectively. These properties reveal that Tin Oxide doped with gold can actually be a good material for a transparent conducting oxide to be used in photovoltaic fabrication and in electronics.

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Fedorenko, George, Ludmila Oleksenko, and Nelly Maksymovych. "Oxide Nanomaterials Based on SnO2 for Semiconductor Hydrogen Sensors." Advances in Materials Science and Engineering 2019 (August 5, 2019): 1–7. http://dx.doi.org/10.1155/2019/5190235.

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Nanosized tin dioxide with an average particle size of 5.3 nm was synthesized by a sol-gel method and characterized by IR spectroscopy, TEM, X-ray, and electron diffraction. The obtained SnO2 can be used as initial material for creation of gas-sensitive layers of adsorption semiconductor sensors. Addition of palladium into the initial nanomaterial allows to improve response to hydrogen of such sensors in comparison with sensors based on undoped SnO2 and provides fast response and recovery time, a wide measuring range of hydrogen content in air ambient, and good repeatability of the sensor signal. Such promising properties could make useful the sensors based on these nanomaterials for devices intended to determine hydrogen in air.

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Yas, Dunia. "Gas Sensing of (SnO2)1-x(ZnO)x Composite Associating with Electrical Properties." Iraqi Journal of Physics (IJP) 17, no. 43 (November 29, 2019): 49–57. http://dx.doi.org/10.30723/ijp.v17i43.480.

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Abstract Semiconductor-based gas sensors were prepared, that use n-type tin oxide (SnO2) and tin oxide: zinc oxide composite (SnO2)1-x(ZnO)x at different x ratios using pulse laser deposition at room temperature. The prepared thin films were examined to reach the optimum conditions for gas sensing applications, namely X-ray diffraction, Hall effect measurements, and direct current conductivity. It was found that the optimum crystallinity and maximum electron density, corresponding to the minimum charge carrier mobility, appeared at 10% ZnO ratio. This ratio appeared has the optimum NO2 gas sensitivity for 5% gas concentration at 300 °C working temperature.

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Ullah, Sana, Rita Branquinho, Tiago Mateus, Rodrigo Martins, Elvira Fortunato, Tahir Rasheed, and Farooq Sher. "Solution Combustion Synthesis of Transparent Conducting Thin Films for Sustainable Photovoltaic Applications." Sustainability 12, no. 24 (December 13, 2020): 10423. http://dx.doi.org/10.3390/su122410423.

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Sunlight is arguably the most promising continuous and cheap alternative sustainable energy source available at almost all living places of the human world. Photovoltaics (PV) is a process of direct conversion of sunlight into electricity and has become a technology of choice for sustainable production of cleaner and safer energy. The solar cell is the main component of any PV technology and transparent conducting oxides (TCO) comprising wide band gap semiconductors are an essential component of every PV technology. In this research, transparent conducting thin films were prepared by solution combustion synthesis of metal oxide nitrates wherein the use of indium is substituted or reduced. Individual 0.5 M indium, gallium and zinc oxide source solutions were mixed in ratios of 1:9 and 9:1 to obtain precursor solutions. Indium-rich IZO (A1), zinc-rich IZO (B1), gallium-rich GZO (C1) and zinc-rich GZO (D1) thin films were prepared through spin coating deposition. In the case of A1 and B1 thin films, electrical resistivity obtained was 3.4 × 10−3 Ω-cm and 7.9 × 10−3 Ω-cm, respectively. While C1 films remained insulating, D1 films showed an electrical resistivity of 1.3 × 10−2 Ω-cm. The optical transmittance remained more than 80% in visible for all films. Films with necessary transparent conducting properties were applied in an all solution-processed solar cell device and then characterized. The efficiency of 1.66%, 2.17%, and 0.77% was obtained for A1, B1, and D1 TCOs, respectively, while 6.88% was obtained using commercial fluorine doped SnO2: (FTO) TCO. The results are encouraging for the preparation of indium-free TCOs towards solution-processed thin-film photovoltaic devices. It is also observed that better filtration of precursor solutions and improving surface roughness would further reduce sheet resistance and improve solar cell efficiency.

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Matsushiro, Dai, Takeshi Hashishin, and Jun Tamaki. "Hydrothermal Synthesis of Noble Metal Loaded Tin Oxide Sol Solution for Gas Sensor Application." Solid State Phenomena 124-126 (June 2007): 1177–80. http://dx.doi.org/10.4028/www.scientific.net/ssp.124-126.1177.

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Noble metal (Au, Pd, Pt) loaded SnO2 sol solutions have been synthesized under hydrothermal condition. The mixed solution of noble metal chloride (HAuCl4, H2PtCl6, or PdCl2) and SnCl4 was neutralized with NH4HCO3 solution. The precipitate gel obtained was thoroughly washed and finally treated under hydrothermal condition (200 oC for 3 h at pH10.5) to obtain transparent sol solution. From SEM and TEM images of powder or thin film derived from sol, any noble metal particles could not be observed. However, the grain growth was suppressed when calcined at 900 oC for noble metal loaded SnO2. The peaks of Sn3d and O1s levels in XPS were shifted to the lower binding energy side. The electrical resistances of thin films prepared from noble metal loaded SnO2 sol were larger than that of pure SnO2 thin film. These results suggested that the noble metals were certainly loaded on SnO2 surface or included in the film to modify the surface state of SnO2.

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41

Jin, Wen Jie, Sei Min Park, Ik Pyo Hong, Seong Young Lee, and Myung Soo Kim. "Performance of Tin Oxide/Graphite Composite Anode for Lithium Ion Battery." Solid State Phenomena 124-126 (June 2007): 1051–54. http://dx.doi.org/10.4028/www.scientific.net/ssp.124-126.1051.

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The graphite particles with average size of 15 μm were used as the anode base materials for lithium ion battery. Tin oxide was incorporated into graphite particles by a precipitation method. As SnO2 content increased from 0 to 80 wt%, the initial discharge capacities of SnO2/graphite composite electrodes raised from 357 to 688 mAh/g, approaching to their theoretical capacities. The composite electrodes exhibited plateau characteristics of SnO2 at 0.85 1 V range in the charge voltage-capacity curves of the first cycle. Increased reversible capacity of the composites suggested that lithium ion could be stored in the both lattices of tin and graphite. It was demonstrated by XRD that the tin metal decomposed from tin oxide in the first cycle of charge played a leading role of charge/discharge thereafter.

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Jagadeesh Babu, Veluru, Syed Sulthan Alaudeen Abdul Haroon Rashid, Subramanian Sundarrajan, and Seeram Ramakrishna. "Metal Oxide Electrospun Nanofibrous Membranes for Effective Dye Degradation and Sustainable Photocatalysis." Sustainable Chemistry 4, no. 1 (January 3, 2023): 26–37. http://dx.doi.org/10.3390/suschem4010003.

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The fabrication of metal oxide nanofibers using (titanium (IV) isopropoxide) and (tin (IV) tert-butoxide) of weight ratio 1:1 precursor in presence of poly (vinyl pyrrolidone) as a binder using a well-known electrospinning technique is reported. The average diameter of TiO2, SnO2, and composite TiO2-SnO2 nanofibers were found to be in the range 75–110 nm. The nanofibers were characterized using thermogravimetric analysis (TGA) to understand the polymer evaporation temperature and further analyzed using scanning electron microscopy (SEM) to study the morphology of the nanofibers. The oxidation states of titanium (Ti) and tin (Sn) ions were analyzed using X-ray photoelectron spectroscopy (XPS), indicating that the TiO2 undergoes a change even after loading SnO2. The photocatalytic efficiency of the composite TiO2-SnO2 fibers was investigated to study the degradation capabilities under ultraviolet (UV) light towards industrial polluting dyes such as Alcian Blue, Alizarin Red S, Bilirubin, Brilliant Blue, Bromophenol Blue, and Rhodamine B ITC. Rhodamine B showed a significant degradation rate of about 0.0064 min−1 in comparison to the other dyes.

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Varela, J. A., L. A. Perazolli, J. A. Cerri, E. R. Leite, and E. Longo. "Sintering of tin oxide and its applications in electronics and processing of high purity optical glasses." Cerâmica 47, no. 302 (June 2001): 117–23. http://dx.doi.org/10.1590/s0366-69132001000200010.

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Tin oxide is an n type semiconductor material with a high covalent behavior. Mass transport in this oxide depends on the surface state promoted by atmosphere or by the solid solution of aliovalent oxide doping. The sintering and grain grow of this type of oxide powder is then controlled by atmosphere and by extrinsic oxygen vacancy formation. For pure SnO2 powder the surface state depends only in the interaction of atmosphere molecules with the SnO2 surface. Inert atmosphere like argon promotes oxygen vacancy formation at the surface due to the reduction of SnO 2 to SnO at surface and liberation of oxygen molecules forming an oxygen vacancy. As a consequence, surface diffusion is enhanced leading to grain coarsening, but no densification. Oxygen atmosphere inhibits the SnO2 reduction decreasing the surface oxygen vacancy concentration. Additions of dopants with lower valence at sintering temperature create extrinsic charged oxygen vacancies that promote mass transport at grain boundary leading to densification and grain growth of this polycrystalline oxide. Cobalt and niobium doped SnO2 ceramics exhibit varistor behavior, which can be applied in electronics. Moreover, SnO2 ceramics are chemically inert and can be applied in form of crucibles to melt some optical glasses.

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Chen, Yi-Hsueh, Po-Yu Chen, and I.-Wen Sun. "Choline Chloride-Carboxylic Acid Based Deep Eutectic Solvents as Advantageous Electrolytes for Direct Electrochemical Conversion of Tin Oxide to Tin." Journal of The Electrochemical Society 168, no. 11 (November 1, 2021): 112509. http://dx.doi.org/10.1149/1945-7111/ac384e.

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Tin oxide (SnO2) pastes prepared by mixing SnO2 powder and various choline chloride (ChCl)-based deep eutectic solvents (DESs) were coated onto screen-printed carbon electrode (SPCE) and directly converted to tin (Sn) metal via potentiostatic electrolysis in the corresponding DESs. It is found that a successful conversion could be achieved in the carboxylic acid-containing DESs rather than in the acid-free DESs, which indicates that the organic acid is the key for the direct electrochemical conversion from a metal oxide to metal. This process may be expanded to the extraction of metals from used metal oxides that are insoluble in water as well as the recent DESs without inconvenient and/or harsh processes.

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Gong, Ye Li, Jin Jin Wu, and Da Wen Zeng. "Research on Sensitization Effect of Ceria Nanoparticles on Tin Oxide Wire-in-Tube Nanofibers." Key Engineering Materials 735 (May 2017): 175–79. http://dx.doi.org/10.4028/www.scientific.net/kem.735.175.

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To elaborate the effect of CeO2 nanoparticles on the sensing properties of SnO2, CeO2-functionalized SnO2 wire-in-tube nanofibers (WITN) was prepared by electrospinning and subsequently impregnating treatment. The gas sensing studies revealed that the CeO2 loaded SnO2 WITN exhibited enhanced sensitivity to ethanol compared to the pristine SnO2. With increasing amount of CeO2, the response of nanocomposites increases firstly and then decreases. And the response of nanocomposites to ethanol reach maximum when the concentration of impregnated Ce (NO3)3·6H2O is 0.03 mol·L-1. To detail the sensing mechanism, the X-ray photoelectron spectroscopy was firstly employed to detect the variation in oxygen species corresponding to different amounts of CeO2, but no obviously changes in oxygen species was detected. Subsequently, it was found that the initial resistance of CeO2@SnO2 WITN was higher than pristine SnO2, which could be beneficial to the improvement of sensing properties. More importantly, oxygen vacancy (mainly offered by CeO2 nanoparticles) was proved to be positively correlated to their gas-sensing performance. In this work, the electronic sensitization mechanism based on CeO2 loaded SnO2 was detailed, which could help for the better understanding the sensitization effect of rare earth element on semiconductor oxides.

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Filippatos, Petros-Panagis, Anastasia Soultati, Nikolaos Kelaidis, Dimitris Davazoglou, Maria Vasilopoulou, Charalampos Drivas, Stella Kennou, and Alexander Chroneos. "Temperature and Ambient Band Structure Changes in SnO2 for the Optimization of Hydrogen Response." Inorganics 11, no. 3 (February 27, 2023): 96. http://dx.doi.org/10.3390/inorganics11030096.

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Tin dioxide (SnO2) is one of the most used materials for sensing applications operating at high temperatures. Commonly, “undoped SnO2” is made by precursors containing elements that can have a deleterious impact on the operation of SnO2 sensors. Here, we employ experimental and theoretical methods to investigate the structural properties and electronic structure of the rutile bulk and surface SnO2, focusing on unintentional doping due to precursors. Unintentional doping from precursors as well as intrinsic doping can play an important role not only on the performance of gas sensors, but also on the properties of SnO2 as a whole. The theoretical calculations were performed using density functional theory (DFT) with hybrid functionals. With DFT we examine the changes in the electronic properties of SnO2 due to intrinsic and unintentional defects and we then discuss how these changes affect the response of a SnO2-based gas sensor. From an experimental point of view, we synthesized low-cost SnO2 thin films via sol–gel and spin-coating processes. To further enhance the performance of SnO2, we coated the surface with a small amount of platinum (Pt). The crystalline structure of the films was analyzed using x-ray diffraction (XRD) and scanning electron microscopy (SEM), while for the determination of the elements contained in the sample, X-ray photoelectron spectroscopy (XPS) measurements were performed. Furthermore, we investigated the effect of temperature on the band structure of SnO2 in air, in a vacuum and in nitrogen and hydrogen chemical environments. To optimize the response, we used current–voltage characterization in varying environments. The aim is to associate the response of SnO2 to various environments with the changes in the band structure of the material in order to gain a better understanding of the response mechanism of metal oxides in different pressure and temperature environments. We found that the resistance of the semiconductor decreases with temperature, while it increases with increasing pressure. Furthermore, the activation energy is highly affected by the environment to which the thin film is exposed, which means that the thin film could respond with lower energy when exposed to an environment different from the air.

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Yoon, Chang-Min, Suk Jekal, Dong-Hyun Kim, Jungchul Noh, Jiwon Kim, Ha-Yeong Kim, Chan-Gyo Kim, Yeon-Ryong Chu, and Won-Chun Oh. "3D Hierarchically Structured Tin Oxide and Iron Oxide-Embedded Carbon Nanofiber with Outermost Polypyrrole Layer for High-Performance Asymmetric Supercapacitor." Nanomaterials 13, no. 10 (May 11, 2023): 1614. http://dx.doi.org/10.3390/nano13101614.

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Herein, unique three-dimensional (3D) hierarchically structured carbon nanofiber (CNF)/metal oxide/conducting polymer composite materials were successfully synthesized by combinations of various experimental methods. Firstly, base CNFs were synthesized by carbonization of electrospun PAN/PVP fibers to attain electric double-layer capacitor (EDLC) characteristics. To further enhance the capacitance, tin oxide (SnO2) and iron oxide (Fe2O3) were coated onto the CNFs via facile hydrothermal treatment. Finally, polypyrrole (PPy) was introduced as the outermost layer by a dispersion polymerization method under static condition to obtain 3D-structured CNF/SnO2/PPy and CNF/Fe2O3/PPy materials. With each synthesis step, the morphology and dimension of materials were transformed, which also added the benign characteristic for supercapacitor application. For the practical application, as-synthesized CNF/SnO2/PPy and CNF/Fe2O3/PPy were applied as active materials for supercapacitor electrodes, and superb specific capacitances of 508.1 and 426.8 F g−1 (at 1 A g−1) were obtained (three-electrode system). Furthermore, an asymmetric supercapacitor (ASC) device was assembled using CNF/SnO2/PPy as the positive electrode and CNF/Fe2O3/PPy as the negative electrode. The resulting CNF/SnO2/PPy//CNF/Fe2O3/PPy device exhibited excellent specific capacitance of 101.2 F g−1 (at 1 A g−1). Notably, the ASC device displayed a long-term cyclability (at 2000 cycles) with a retention rate of 81.1%, compared to a CNF/SnO2//CNF/Fe2O3 device of 70.3% without an outermost PPy layer. By introducing the outermost PPy layer, metal oxide detachment from CNFs were prevented to facilitate long-term cyclability of electrodes. Accordingly, this study provides an effective method for manufacturing a high-performance and stable supercapacitor by utilizing unique 3D hierarchical materials, comprised of CNF, metal oxide, and conducting polymer.

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Sharma, R., V. Kumar, and Y. C. Goswami. "Excellent flexible Tin Oxide-metal sulfide nanocomposites grown by spin coating chemical route." Chalcogenide Letters 18, no. 8 (August 2021): 473–79. http://dx.doi.org/10.15251/cl.2021.188.473.

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Tin oxide /Metal sulfide nanocomposites were synthesized using two step solution route. In the first step SnO2 gel were obtained followed by the next step of addition of precursor of cadmium and sulfide salts. Films were grown on cellulose flexible substrate using spin coating method. All the samples were analyzed using structural, morphological and optical characterizations. In X ray diffractograms, tetragonal rutile structure is observed with shift in peak towards lower angle due to tensile strain. SEM micrographs show that the ring like structure converted into flake like structures. AFM micrographs also confirm the ring like or porous film converted into flake. Photoluminescence spectra exhibits the intensity of SnO2-CdS decreases as compared to SnO2. Optical transmittance confirms the formation of nanocomposite due to additional band was observed in nanocomposites.

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Becker, Martin, Angelika Polity, Davar Feili, and Bruno K. Meyer. "Deposition of tin oxides by Ion-Beam-Sputtering." MRS Proceedings 1494 (2012): 153–58. http://dx.doi.org/10.1557/opl.2012.1650.

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ABSTRACTSynthesis of both p-type and n-type oxide semiconductors is required to develop oxide-based electronic devices. Tin monoxide (SnO) recently has received increasing attention as an alternative p-type oxide semiconductor because it is a simple binary compound consisting of abundant elements. Another phase of the tin oxygen system, SnO2, is of great technological interest as transparent electrodes and as heat-reflecting filters. The preparation of tin oxide thin films has been performed by many different procedures. Radio-frequency (RF) ion-thrusters, as designed for propulsion applications, are also qualified for thin film deposition and surface etching, because different gas mixtures, extraction voltages and RF power can be applied. Tin oxide thin films were grown by ion beam sputtering (IBS) using a 3” metallic tin target. Different aspects of the thin film growth and properties of the tin oxide phases were investigated in relation to flux of oxygen fed into the gas discharge in the ion thruster. Results on thin film growth by IBS will be presented, structural, vibrational and optical properties of the films will be discussed.

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50

Yang, Gow-Huei, Jun-Dar Hwang, Chih-Hsueh Lan, Chien-Mao Chan, Hone-Zem Chen, and Shoou-Jinn Chang. "Indium–Tin-Oxide Metal–Insulator–Semiconductor GaN Ultraviolet Photodetectors Using Liquid-Phase-Deposition Oxide." Japanese Journal of Applied Physics 46, no. 8A (August 6, 2007): 5119–21. http://dx.doi.org/10.1143/jjap.46.5119.

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Journal articles on the topic 'Metal Oxide Semiconductor Tin Oxide (SnO2)'

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