Books on the topic 'Metal oxide semiconductors, Complimentary'
Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles
Consult the top 50 books for your research on the topic 'Metal oxide semiconductors, Complimentary.'
Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.
You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.
Browse books on a wide variety of disciplines and organise your bibliography correctly.
Heusler, Lucas Sebastian. Transistor sizing for timing optimization of combinational digital CMOS circuits. [Konstanz, Switzerland: Hartung-Gorre Verlag, 1990.
Find full textZhao, Yi. Wafer level reliability of advanced CMOS devices and processes. New York: Nova Science Publishers, 2008.
Find full textNicollian, E. H. MOS (metal oxide semiconductor) physics and technology. Hoboken, N.J: Wiley-Interscience, 2003.
Find full textPfaffli, Paul. Characterisation of degradation and failure phenomena in MOS devices. Konstanz [Germany]: Hartung-Gorre, 1999.
Find full textSato, Norio. Electrochemistry at metal and semiconductor electrodes. Amsterdam: Elsevier, 1998.
Find full textF, Hawkins Charles, ed. CMOS electronics: How it works, how it fails. New York: IEEE Press, 2004.
Find full textHelms, Harry L. High-speed (HC/HCT) CMOS guide. Englewood Cliffs, N.J: Prentice Hall, 1989.
Find full textShoji, Masakazu. CMOS digital circuit technology. Englewood Cliffs, N.J: Prentice Hall, 1988.
Find full textGrabinski, Władysław, and Thomas Gneiting. Power/HVMOS devices compact modeling. Dordrecht: Springer, 2010.
Find full textMajkusiak, Bogdan. Bardzo cienki tlenek bramkowy w tranzystorze MOS--konsekwencje dla działania i modelowania. Warszawa: Wydawnictwa Politechniki Warszawskiej, 1991.
Find full textShriram, Ramanathan, Symposium J, "Materials and Devices for Beyond CMOS Scaling" (2010 : San Francisco, Calif.), and Materials Research Society, eds. Materials and devices for end-of-roadmap and beyond CMOS scaling: Symposium held April 5-9, 2010, San Francisco, California. Warrendale, Pa: Materials Research Society, 2010.
Find full textJ, Branning D., ed. Experiments in CMOS technology. Blue Ridge Summit, PA: Tab Books, 1988.
Find full text(Firm), Signetics. High-speed CMOS data manual. Sunnyvale, Calif: Signetics Corp., 1988.
Find full textMinoru, Fujishima, ed. Design and modeling of millimeter-wave CMOS circuits for wireless transceivers: Era of sub-100nm technology. Dordrecht: Springer Science+Business Media, 2008.
Find full text(Firm), Signetics. High-speed CMOS data manual. Sunnyvale, Calif: Signetics Corp., 1988.
Find full textYusuf, Leblebici, ed. CMOS digital integrated circuits: Analysis and design. 2nd ed. Boston, MA: McGraw-Hill, 1998.
Find full textKang, Sung-Mo. CMOS digital integrated circuits: Analysis and design. 2nd ed. Boston, Mass: McGraw-Hill, 1999.
Find full textYusuf, Leblebici, ed. CMOS digital integrated circuits: Analysis and design. 3rd ed. Boston: McGraw-Hill, 2003.
Find full textKang, Sung-Mo. CMOS digital integrated circuits: Analysis and design. New York: McGraw-Hill, 1996.
Find full textRumak, N. V. Sistema kremniĭ--dvuokisʹ kremnii͡a︡ v MOP-strukturakh. Minsk: "Nauka i tekhnika", 1986.
Find full textPeluso, Vincenzo. Design of low-voltage low-power CMOS Delta-Sigma A/D converters. Boston: Kluwer Academic Publishers, 1999.
Find full textInternational, Symposium on Advanced Gate Stack Source/Drain and Channel Engineering for Si-based CMOS (2nd 2006 Cancún Mexico). Advanced gate stack, source/drain, and channel engineering for Si-based CMOS 2: New materials, processes and equipment. Pennington, NJ: Electrochemical Society, 2006.
Find full textShoji, Masakazu. CMOS digital circuit technology. New Jersey: Prentice-Hall International, 1988.
Find full textLatchup in CMOS technology: The problem and its cure. Boston: Kluwer Academic Publishers, 1986.
Find full textBentarzi, Hamid. Transport in Metal-Oxide-Semiconductor Structures: Mobile Ions Effects on the Oxide Properties. Berlin, Heidelberg: Springer-Verlag Berlin Heidelberg, 2011.
Find full textMeeting, Materials Research Society, and Symposium C, "CMOS Gate-Stack Scaling-- Materials, Interfaces and Reliability Implications" (2009 : San Francisco, Calif.), eds. CMOS gate-stack scaling-- materials, interfaces and reliability implications: Symposium held April 14-16, 2009, San Francisco, california, U.S.A. Warrendale, Pa: Materials Research Society, 2009.
Find full textKlar, Heinrich. Integrierte digitale Schaltungen MOS/BICMOS. 2nd ed. Berlin: Springer, 1996.
Find full textKursun, Volkan. Multiple supply and threshold voltage CMOS circuits. Chichester, England: John Wiley, 2006.
Find full textJosé, Pineda de Gyvez, Pradhan Dhiraj K, and IEEE Circuits and Systems Society., eds. Integrated circuit manufacturability. Piscataway, NJ: IEEE Press, 1998.
Find full textPearton, Stephen J., Chennupati Jagadish, and Bengt G. Svensson. Oxide Semiconductors. Elsevier Science & Technology Books, 2013.
Find full textDemkov, Alexander A., and Agham B. Posadas. Integration of Functional Oxides with Semiconductors. Springer, 2014.
Find full textZhang, Jing. Generation of substrate bias and current sources in CMOS technology. 1995.
Find full textLim, Wei Tjan (Richard). Suppression of substrate noise in a mixed-signal CMOS intergrated circuit. 1996.
Find full textGneiting, Thomas, and Wladyslaw Grabinski. Power/Hvmos Devices Compact Modeling. Springer, 2010.
Find full textGneiting, Thomas, and Wladyslaw Grabinski. POWER/HVMOS Devices Compact Modeling. Springer, 2014.
Find full textG, Einspruch Norman, and Gildenblat Gennady Sh, eds. Advanced MOS device physics. San Diego: Academic Press, 1989.
Find full textMaes, Herman E., Willy M. Sansen, and Jeroen A. A. Croon. Matching Properties of Deep Sub-Micron MOS Transistors. Springer, 2010.
Find full textPaul, Vande Voorde, and Hewlett-Packard Laboratories, eds. Extension of bandgap broadening model for quantum mechanical correction in sub-quarter micron MOS devices to accumulation layer. Palo Alto, CA: Hewlett-Packard Laboratories, Technical Publications Department, 1996.
Find full text1948-, Gautier Jacques, ed. Physics and operation of silicon devices in integrated circuits. London: ISTE, 2009.
Find full text