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Journal articles on the topic 'Metal oxide semiconductors, Complimentary'

Author: Grafiati

Published: 4 June 2021

Last updated: 9 February 2022

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1

Moreno, Mauricio. "Complimentary metal-oxide semiconductor linear photosensor array for 3-D reconstruction applications." Optical Engineering 43, no. 10 (2004): 2448. http://dx.doi.org/10.1117/1.1786939.

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2

Serov, Alexander, Wiendelt Steenbergen, and Frits de Mul. "Laser Doppler perfusion imaging with a complimentary metal oxide semiconductor image sensor." Optics Letters 27, no. 5 (2002): 300. http://dx.doi.org/10.1364/ol.27.000300.

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3

Martin, Lucy C., David T. Clark, Ewan P. Ramsay, et al. "Comparison of Oxide Quality for Monolithically Fabricated SiC CMOS Structures." Materials Science Forum 717-720 (May 2012): 773–76. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.773.

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The recent development of silicon carbide complimentary metal-oxide-semiconductor (CMOS) is a key enabling step in the realisation of low power circuitry for high temperature applications, such as aerospace and well logging. This paper describes investigations into the properties of the gate dielectric as part of the development of the technology to realize monolithic fabrication of both n and p channel devices. A comparison of the oxide quality of the silicon carbide CMOS transistors is performed to examine the feasibility of this technology for high temperature circuitry.

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4

Lakestani, Fereydoun. "Full-field optical coherence tomography with a complimentary metal-oxide semiconductor digital signal processor camera." Optical Engineering 45, no. 1 (2006): 015601. http://dx.doi.org/10.1117/1.2158968.

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5

Sederberg, S., V. Van, and A. Y. Elezzabi. "Monolithic integration of plasmonic waveguides into a complimentary metal-oxide-semiconductor- and photonic-compatible platform." Applied Physics Letters 96, no. 12 (2010): 121101. http://dx.doi.org/10.1063/1.3365020.

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6

Kim, Tae-Hoon, Cihan Yilmaz, Sivasubramanian Somu, and Ahmed Busnaina. "3-D Perpendicular Assembly of Single Walled Carbon Nanotubes for Complimentary Metal Oxide Semiconductor Interconnects." Journal of Nanoscience and Nanotechnology 14, no. 5 (2014): 3673–76. http://dx.doi.org/10.1166/jnn.2014.7942.

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7

Martin, Lucy Claire, David T. Clark, E. P. Ramsay, et al. "Charge Pumping Analysis of Monolithically Fabricated 4H-SiC CMOS Structures." Materials Science Forum 740-742 (January 2013): 891–94. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.891.

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The development of silicon carbide complimentary metal-oxide-semiconductor (CMOS) is a key-enabling step in the realisation of low power circuitry for high-temperature applications. This paper describes investigations using the charge pumping technique into the properties of the gate dielectric interface as part of the development of the technology to realise monolithic fabrication of both n and p channel devices. A comparison of the charge pumping technique and the Hill-Coleman and Terman methods is also carried out to explore the feasibility of the technique.

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8

Endoh, Tetsuo, Fumitaka Iga, Shoji Ikeda, et al. "The Performance of Magnetic Tunnel Junction Integrated on the Back-End Metal Line of Complimentary Metal–Oxide–Semiconductor Circuits." Japanese Journal of Applied Physics 49, no. 4 (2010): 04DM06. http://dx.doi.org/10.1143/jjap.49.04dm06.

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9

Fritze, M., J. Burns, P. W. Wyatt, et al. "Sub-100 nm silicon on insulator complimentary metal–oxide semiconductor transistors by deep ultraviolet optical lithography." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 18, no. 6 (2000): 2886. http://dx.doi.org/10.1116/1.1314387.

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10

Rishton, S. A. "New complimentary metal–oxide semiconductor technology with self-aligned Schottky source/drain and low-resistance T gates." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 15, no. 6 (1997): 2795. http://dx.doi.org/10.1116/1.589730.

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11

Lin, S., H. Cui, L. Wu, W. Wang та X. Sun. "Design of broadside-coupled parallel line millimetre-wave filters by standard 0.18-μm complimentary metal oxide semiconductor technology". IET Microwaves, Antennas & Propagation 6, № 1 (2012): 72. http://dx.doi.org/10.1049/iet-map.2011.0024.

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12

Morifuji, Eiji. "Impact of Mechanical Stress on Hot-Carrier Lifetime and Time-Dependent Dielectric Breakdown in Downscaled Complimentary Metal–Oxide–Semiconductor." Japanese Journal of Applied Physics 48, no. 2 (2009): 021206. http://dx.doi.org/10.1143/jjap.48.021206.

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13

Ayón, A. A., K. Ishihara, R. A. Braff, H. H. Sawin, and M. A. Schmidt. "Application of the footing effect in the micromachining of self-aligned, free-standing, complimentary metal–oxide–semiconductor compatible structures." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 17, no. 4 (1999): 2274–79. http://dx.doi.org/10.1116/1.581760.

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14

Uraoka, Yukiharu, Hiroshi Yano, Tomoaki Hatayama, and Takashi Fuyuki. "Comprehensive Study on Reliability of Low-Temperature Poly-Si Thin-Film Transistors under Dynamic Complimentary Metal-Oxide Semiconductor Operations." Japanese Journal of Applied Physics 41, Part 1, No. 4B (2002): 2414–18. http://dx.doi.org/10.1143/jjap.41.2414.

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15

Chang, J. F., and Y. S. Lin. "DC∼10.5 GHz complimentary metal oxide semiconductor distributed amplifier with RC gate terminal network for ultra-wideband pulse radio systems." IET Microwaves, Antennas & Propagation 6, no. 2 (2012): 127. http://dx.doi.org/10.1049/iet-map.2011.0231.

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16

Li, V. Z.-Q., M. R. Mirabedini, R. T. Kuehn, et al. "Rapid thermal chemical vapor deposition ofin situboron-doped polycrystalline silicon-germanium films on silicon dioxide for complimentary-metal-oxide-semiconductor applications." Applied Physics Letters 71, no. 23 (1997): 3388–90. http://dx.doi.org/10.1063/1.120344.

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17

Parikh, Pritesh, Corey Senowitz, Don Lyons, et al. "Three-Dimensional Nanoscale Mapping of State-of-the-Art Field-Effect Transistors (FinFETs)." Microscopy and Microanalysis 23, no. 5 (2017): 916–25. http://dx.doi.org/10.1017/s1431927617012491.

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AbstractThe semiconductor industry has seen tremendous progress over the last few decades with continuous reduction in transistor size to improve device performance. Miniaturization of devices has led to changes in the dopants and dielectric layers incorporated. As the gradual shift from two-dimensional metal-oxide semiconductor field-effect transistor to three-dimensional (3D) field-effect transistors (finFETs) occurred, it has become imperative to understand compositional variability with nanoscale spatial resolution. Compositional changes can affect device performance primarily through fluctuations in threshold voltage and channel current density. Traditional techniques such as scanning electron microscope and focused ion beam no longer provide the required resolution to probe the physical structure and chemical composition of individual fins. Hence advanced multimodal characterization approaches are required to better understand electronic devices. Herein, we report the study of 14 nm commercial finFETs using atom probe tomography (APT) and scanning transmission electron microscopy–energy-dispersive X-ray spectroscopy (STEM-EDS). Complimentary compositional maps were obtained using both techniques with analysis of the gate dielectrics and silicon fin. APT additionally provided 3D information and allowed analysis of the distribution of low atomic number dopant elements (e.g., boron), which are elusive when using STEM-EDS.

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18

Murata, M., K. Yamauchi, H. Kojima, A. Yokoyama, T. Inoue, and T. Iwamori. "Parasitic Channel Induced by Spin‐On‐Glass in a Double‐Level Metallization Complimentary Metal Oxide Semiconductor Process: Its Formation and Method of Suppression." Journal of The Electrochemical Society 140, no. 8 (1993): 2346–56. http://dx.doi.org/10.1149/1.2220821.

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19

Liebmann, L. "Application of proximity synchrotron orbital radiation lithography and deep ultraviolet phase-shifted-mask lithography to sub-quarter-micron complimentary metal oxide semiconductor devices." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 12, no. 6 (1994): 3943. http://dx.doi.org/10.1116/1.587579.

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20

Ramesh, Tatapudi, Gurugubelli Upendra, Bandaru Sravani Krishna, et al. "A comparative study to diagnose the accuracy of E-speed film, complimentary metal oxide semiconductor and storage phosphor systems in the detection of proximal caries: An in vitro study." International Journal of Dental Research 4, no. 1 (2016): 1. http://dx.doi.org/10.14419/ijdr.v4i1.5717.

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<p><strong>Background:</strong> Dental caries is one of the most commonly encountered conditions in clinical dentistry and these lesions remain undetected when confined to the vicinity of inter-proximal surfaces. Radiography plays a key role in the detection of inter-proximal caries especially in tight contacts.</p><p><strong>Objectives:</strong> The purpose of this study was to compare the diagnostic accuracy of E-speed film, complementary metal oxide semiconductors (CMOS) and storage phosphor systems (PSP) in the detection of proximal caries of the posterior teeth.</p><p><strong>Methods:</strong> Conventional films, CMOS and PSP images were used in detecting proximal caries on mesial and distal surfaces of 63 teeth (126 surfaces). Interpretation of all digital and conventional radiographs were performed and reanalyzed by four observers. The collected data was subjected to statistical analysis using chi square test, weighed kappa statistics and spearman rank correlation coefficient.</p><p><strong>Results:</strong> The PSP images showed more accurate results in identifying normal tooth, enamel caries, dentinal caries and deep dental caries and kappa statistics had represented almost perfect reading of 0.8 – 0.9 for PSP images whereas CMOS images showed substantial reading of 0.6 – 0.7, and for IOPA images it showed moderate reading of 0.5 – 0.6, which stated that the higher inter-observer agreement was obtained for PSP images when compared with images taken by IOPA and CMOS. The intra-observer reliability by kappa statistics had shown highly significant value (0.82) in the present study.</p><p><strong>Conclusion:</strong> Conventional films, CMOS and PSP images had shown almost appropriate results in the detection of proximal caries but PSP receptors were better in disclosing the details more accurately in terms of delineating the actual extent of the lesion pertaining to their high resolution capacity and further their flexibility made them easier during handling the radiograph, when compared with that of rigid CMOS receptors.</p>

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21

Grados, Hugo Ricardo Jiménez, Leandro T. Manera, Ricardo Wada, et al. "DC Improvements and Low-Frequency 1/fNoise Characteristics of Complimentary Metal–Oxide–Semiconductor Transistors with a Single n+-Doped Polycrystalline Si/SiGe Gate Stack." Japanese Journal of Applied Physics 49, no. 4 (2010): 04DC04. http://dx.doi.org/10.1143/jjap.49.04dc04.

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22

Smith, A., Qi Li, Agin Vyas, et al. "Carbon-Based Electrode Materials for Microsupercapacitors in Self-Powering Sensor Networks: Present and Future Development." Sensors 19, no. 19 (2019): 4231. http://dx.doi.org/10.3390/s19194231.

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There is an urgent need to fulfill future energy demands for micro and nanoelectronics. This work outlines a number of important design features for carbon-based microsupercapacitors, which enhance both their performance and integration potential and are critical for complimentary metal oxide semiconductor (CMOS) compatibility. Based on these design features, we present CMOS-compatible, graphene-based microsupercapacitors that can be integrated at the back end of the line of the integrated circuit fabrication. Electrode materials and their interfaces play a crucial role for the device characteristics. As such, different carbon-based materials are discussed and the importance of careful design of current collector/electrode interfaces is emphasized. Electrode adhesion is an important factor to improve device performance and uniformity. Additionally, doping of the electrodes can greatly improve the energy density of the devices. As microsupercapacitors are engineered for targeted applications, device scaling is critically important, and we present the first steps toward general scaling trends. Last, we outline a potential future integration scheme for a complete microsystem on a chip, containing sensors, logic, power generation, power management, and power storage. Such a system would be self-powering.

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23

Du, Yankang, and Shuming Chen. "A Novel Layout-Based Single Event Transient Injection Approach to Evaluate the Soft Error Rate of Large Combinational Circuits in Complimentary Metal-Oxide-Semiconductor Bulk Technology." IEEE Transactions on Reliability 65, no. 1 (2016): 248–55. http://dx.doi.org/10.1109/tr.2015.2427372.

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24

Pabo, Eric F., Garrett Oakes, Ron Miller, et al. "Enabling Wafer Level Processes for CIS Manufacturing." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2010, DPC (2010): 002393–413. http://dx.doi.org/10.4071/2010dpc-tha36.

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CMOS (Complimentary Metal Oxide Semiconductor) Image Sensors have become ubiquitous, appearing in cars, cell phones, toys and many other devices used in every day life. The primary reason for this increasing presence of CIS (CMOS Image Sensors) is the continual improvement of the performance to cost ratio of these devices. The drivers behind this are the advancements of CMOS image sensor technology such as improved signal to noise ratio as well as advancements in wafer level processing technology related to 3D packaging. Numerous process developments related to both the electrical and optical aspects of 3D packaging of CIS that have enabled this climb up the performance vs. cost curve will be reviewed in this paper with particular attention to:(1) Lens molding – The ability to mold lenses, both spherical and aspherical at the wafer level as well as make full size master stamps from partial masters for lens molding. These lenses can be molded on both sides of a wafer and the lenses aligned to each other;(2) Aligned wafer bonding for optical interconnects consisting of lens stacks and CIS wafer, to allow the thinning of a CIS for BSI (back side illumination), and for electrical interconnects. Together these processes allow the heterogeneous integration of optical and electrical elements at the wafer level and advance the CIS up the performance vs. cost curve.

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25

Adhikari, Sangeeta, and Debasish Sarkar. "Metal oxide semiconductors for dye degradation." Materials Research Bulletin 72 (December 2015): 220–28. http://dx.doi.org/10.1016/j.materresbull.2015.08.009.

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26

Kiriakidis, George, and Vassilios Binas. "Metal oxide semiconductors as visible light photocatalysts." Journal of the Korean Physical Society 65, no. 3 (2014): 297–302. http://dx.doi.org/10.3938/jkps.65.297.

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27

Toriumi, Akira. "0.1μm complementary metal–oxide–semiconductors and beyond". Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 14, № 6 (1996): 4020. http://dx.doi.org/10.1116/1.588635.

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28

Saha, H., and C. Chaudhuri. "Complementary Metal Oxide Semiconductors Microelectromechanical Systems Integration." Defence Science Journal 59, no. 6 (2009): 557–67. http://dx.doi.org/10.14429/dsj.59.1560.

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29

Anta, Juan A. "Electron transport in nanostructured metal-oxide semiconductors." Current Opinion in Colloid & Interface Science 17, no. 3 (2012): 124–31. http://dx.doi.org/10.1016/j.cocis.2012.02.003.

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30

Tutov, E. A., S. V. Ryabtsev, E. E. Tutov, and E. N. Bormontov. "Silicon MOS structures with nonstoichiometric metal-oxide semiconductors." Technical Physics 51, no. 12 (2006): 1604–7. http://dx.doi.org/10.1134/s1063784206120097.

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31

CAROTTA, M., V. GUIDI, G. MARTINELLI, M. NAGLIATI, D. PUZZOVIO, and D. VECCHI. "Sensing of volatile alkanes by metal-oxide semiconductors." Sensors and Actuators B: Chemical 130, no. 1 (2008): 497–501. http://dx.doi.org/10.1016/j.snb.2007.09.053.

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32

Hossein-Babaei, Faramarz, Saeed Masoumi, and Amirreza Noori. "Seebeck voltage measurement in undoped metal oxide semiconductors." Measurement Science and Technology 28, no. 11 (2017): 115002. http://dx.doi.org/10.1088/1361-6501/aa82a4.

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33

Hamers, Robert J., Scott A. Chambers, Paul E. Evans, et al. "Molecular and biomolecular interfaces to metal oxide semiconductors." physica status solidi (c) 7, no. 2 (2010): 200–205. http://dx.doi.org/10.1002/pssc.200982472.

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34

Zhou, Xinran, Xiaowei Cheng, Yongheng Zhu, et al. "Ordered porous metal oxide semiconductors for gas sensing." Chinese Chemical Letters 29, no. 3 (2018): 405–16. http://dx.doi.org/10.1016/j.cclet.2017.06.021.

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35

Pandit, Bhishma, and Jaehee Cho. "AlGaN Ultraviolet Metal–Semiconductor–Metal Photodetectors with Reduced Graphene Oxide Contacts." Applied Sciences 8, no. 11 (2018): 2098. http://dx.doi.org/10.3390/app8112098.

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AlGaN semiconductors are promising materials in the field of ultraviolet (UV) detection. We fabricated AlGaN/GaN UV metal–semiconductor–metal (MSM) photodiodes with two back-to-back interdigitated finger electrodes comprising reduced graphene oxide (rGO). The rGO showed high transparency below the wavelength of 380 nm, which is necessary for a visible-blind photodetector, and showed outstanding Schottky behavior on AlGaN. As the photocurrent, dark current, photoresponsivity, detectivity, and cut-off wavelength were investigated with the rGO/AlGaN MSM photodiodes with various Al mole fractions, systematic variations in the device characteristics with the Al mole fraction were confirmed, proving the potential utility of the device architecture combining two-dimensional materials, rGO, and nitride semiconductors.

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36

Wang, Yucheng, Yuming Zhang, Tiqiang Pang, et al. "Ionic behavior of organic–inorganic metal halide perovskite based metal-oxide-semiconductor capacitors." Physical Chemistry Chemical Physics 19, no. 20 (2017): 13002–9. http://dx.doi.org/10.1039/c7cp01799e.

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37

Biswas, Somnath, Jakub Husek, Stephen Londo, and L. Robert Baker. "Highly Localized Charge Transfer Excitons in Metal Oxide Semiconductors." Nano Letters 18, no. 2 (2018): 1228–33. http://dx.doi.org/10.1021/acs.nanolett.7b04818.

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38

Rim, You Seung, Huajun Chen, Bowen Zhu, et al. "Interface Engineering of Metal Oxide Semiconductors for Biosensing Applications." Advanced Materials Interfaces 4, no. 10 (2017): 1700020. http://dx.doi.org/10.1002/admi.201700020.

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39

Xu, Kang, Yi Wang, Yuda Zhao, and Yang Chai. "Modulation doping of transition metal dichalcogenide/oxide heterostructures." Journal of Materials Chemistry C 5, no. 2 (2017): 376–81. http://dx.doi.org/10.1039/c6tc04640a.

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40

Ohkubo, S., Y. Ashida, T. Utsumi, K. Hongo, and G. Nogami. "The Role of Metal Hydrides in Electrode Reactions on Metal Oxide Semiconductors." Journal of The Electrochemical Society 143, no. 10 (1996): 3273–78. http://dx.doi.org/10.1149/1.1837197.

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41

Wickramasinghe, Thushan E., Gregory Jensen, Ruhi Thorat, Miles Lindquist, Shrouq H. Aleithan, and Eric Stinaff. "Complementary growth of 2D transition metal dichalcogenide semiconductors on metal oxide interfaces." Applied Physics Letters 117, no. 21 (2020): 213104. http://dx.doi.org/10.1063/5.0027225.

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42

Chen, Y. L., G. L. Liou, H. H. Hsu, et al. "Low-Voltage Metal-Oxide Thin Film Transistors Using P-Type Tin-Oxide Semiconductors." Journal of Nanoscience and Nanotechnology 19, no. 9 (2019): 5619–23. http://dx.doi.org/10.1166/jnn.2019.16563.

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43

Chen, Huajun, You Seung Rim, Isaac Caleb Wang, et al. "Quasi-Two-Dimensional Metal Oxide Semiconductors Based Ultrasensitive Potentiometric Biosensors." ACS Nano 11, no. 5 (2017): 4710–18. http://dx.doi.org/10.1021/acsnano.7b00628.

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44

Braginsky, L. "Light absorption at the interface of transition-metal oxide semiconductors." Solar Energy Materials and Solar Cells 64, no. 1 (2000): 15–27. http://dx.doi.org/10.1016/s0927-0248(00)00038-6.

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45

Srivastava, S. K., P. Magudapathy, P. Gangopadhyay, S. Amirthapandian, Santanu Bera, and A. Das. "Ag nanoparticles in compound metal oxide semiconductors: Syntheses and characterizations." Thin Solid Films 681 (July 2019): 86–92. http://dx.doi.org/10.1016/j.tsf.2019.04.039.

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46

Thomas, Stuart R., Pichaya Pattanasattayavong, and Thomas D. Anthopoulos. "Solution-processable metal oxide semiconductors for thin-film transistor applications." Chemical Society Reviews 42, no. 16 (2013): 6910. http://dx.doi.org/10.1039/c3cs35402d.

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47

Janesick, James. "Lux transfer: Complementary metal oxide semiconductors versus charge-coupled devices." Optical Engineering 41, no. 6 (2002): 1203. http://dx.doi.org/10.1117/1.1476692.

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48

Ji, Haocheng, Wen Zeng, and Yanqiong Li. "Gas sensing mechanisms of metal oxide semiconductors: a focus review." Nanoscale 11, no. 47 (2019): 22664–84. http://dx.doi.org/10.1039/c9nr07699a.

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This review organizes and introduces several common gas sensing mechanisms of metal oxide semiconductors in detail and classifies them into two categories. The scope and relationship of these mechanisms are clarified.

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49

Ho, Dongil, Hyewon Jeong, Sunwoo Choi, and Choongik Kim. "Organic materials as a passivation layer for metal oxide semiconductors." Journal of Materials Chemistry C 8, no. 43 (2020): 14983–95. http://dx.doi.org/10.1039/d0tc02379e.

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50

Kim, Hojoong, and Jang-Yeon Kwon. "Enzyme immobilization on metal oxide semiconductors exploiting amine functionalized layer." RSC Advances 7, no. 32 (2017): 19656–61. http://dx.doi.org/10.1039/c7ra01615h.

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