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Relevant bibliographies by topics / Metal-oxide thin-films

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Academic literature on the topic 'Metal-oxide thin-films'

Author: Grafiati

Published: 4 June 2021

Last updated: 26 January 2023

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Journal articles on the topic "Metal-oxide thin-films"

1

Deki, Shigehito, and Yoshifumi Aoi. "Synthesis of metal oxide thin films by liquid-phase deposition method." Journal of Materials Research 13, no. 4 (1998): 883–90. http://dx.doi.org/10.1557/jmr.1998.0119.

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A novel wet process to synthesize metal oxide thin films has been developed. The process is called the Liquid-Phase Deposition (LPD) method. In this method, metal oxide or hydroxide thin films are formed on the substrate through the ligand-exchanging (hydrolysis) equilibrium reaction of metal-fluoro complex species and the F− consumption reaction of a F− scavenger. The LPD method is a unique soft solution process, and is performed by very simple procedures. In this paper, we develop a method of preparing composite oxide thin films, Pt-dispersed titanium oxide, and iron-nickel binary oxide thin films.

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Kuo, Y., and C. C. Lin. "Electroluminescence from Metal Oxide Thin Films." ECS Solid State Letters 2, no. 8 (2013): Q59—Q61. http://dx.doi.org/10.1149/2.002308ssl.

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Moshe, Hagay, Maarten Vanbel, Ventsislav Kolev Valev, Thierry Verbiest, David Dressler, and Yitzhak Mastai. "Chiral Thin Films of Metal Oxide." Chemistry - A European Journal 19, no. 31 (2013): 10295–301. http://dx.doi.org/10.1002/chem.201300760.

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4

Wayne Goodman, D. "Surface spectroscopic studies of model supported-metal catalysts." Proceedings, annual meeting, Electron Microscopy Society of America 53 (August 13, 1995): 394–95. http://dx.doi.org/10.1017/s0424820100138348.

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A new surface science approach to the study of supported-metal catalysts will be described. Thin oxide films (~100 Å) of SiO2, Al2O3, or MgO supported on a refractory metal substrate (e.g., Mo or W) have been prepared by depositing the oxide metal precursor in a background of oxygen (ca. l×l0-5 Torr) [1]. The thin-film catalysts facilitate investigation by an array of surface techniques, many of which are precluded when applied to the corresponding bulk oxide [1,2]. In particular, the oxide films have been characterized by AES, ELS, HREELS, XPS, UPS, ISS, IRAS, and TD spectroscopies and shown to have essentially identical electronic and vibrational properties of the corresponding bulk oxides. These studies indicate then that these films can serve as convenient models for oxide catalysts or metal supports. Metal thin films (e.g., Cu, Pd, Ni) have subsequently been deposited onto the oxide films and the properties of the metal/oxide system then studied with the above array of surface techniques [3]. By properly defining the metal thin film thickness, metal particles of varying sizes can be synthesized with dispersions from a few nanometers to tens of nanometers.

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Zainol, Mohd Nizar, Shafinaz Sobihana Shariffudin, Mohamad Hafiz Mamat, and Mohamad Rusop. "Effect of Oxygen Annealing on the Electrical and Optical Properties of Zinc Oxide Thin Film." Advanced Materials Research 1109 (June 2015): 598–602. http://dx.doi.org/10.4028/www.scientific.net/amr.1109.598.

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This paper presents on the effect of oxygen annealing on the electrical properties and optical properties. Sol gel spin coating is used to deposit zinc oxide thin films on glass substrates to obtain the uniform thin films. Here, the ZnO thin films were annealed in oxygen environment with various oxygen concentration of 20 to 40 sccm. This metal oxide has shown its ability as a very high optical transmittance which at 20 sccm thin films give the highest transmittance that is 97.44% and at 40 sccm thin films give the lowest transmittance that is 87.61%. Next, this metal oxide also has shown its ability in fairly good electrical properties which the lowest resistivity at 40 sccm thin films is 1.61× 104 Ωcm-1.

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Carretero-Genevrier, Adrian, Glenna L. Drisko, David Grosso, Cédric Boissiere, and Clement Sanchez. "Mesoscopically structured nanocrystalline metal oxide thin films." Nanoscale 6, no. 23 (2014): 14025–43. http://dx.doi.org/10.1039/c4nr02909g.

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Stahl, B., M. Ghafari, R. Gomez-Escoto, and H. Hahn. "Magnetoresistance of granular metal-oxide thin films." IEEE Transactions on Magnetics 35, no. 5 (1999): 2880–82. http://dx.doi.org/10.1109/20.801012.

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Fazinić, S., I. Bogdanović, E. Cereda, M. Jakšić, and V. Valković. "Stoichiometric determination of thin metal oxide films." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 75, no. 1-4 (1993): 371–74. http://dx.doi.org/10.1016/0168-583x(93)95678-x.

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9

S. Saranya, N. Sethupathi, and P. Mahalingam. "EFFECT OF COBALT DOPING AND ANNEALING ON PROPERTIES OF MANGANESE OXIDE THIN FILMS PREPARED USING JET NEBULIZER SPRAY PYROLYSIS TECHNIQUE." RASAYAN Journal of Chemistry 15, no. 04 (2022): 2901–7. http://dx.doi.org/10.31788/rjc.2022.1547009.

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The controlled deposition and post-deposition treatments are fundamental steps in the synthesis of thin films in the range of nanometer to several micrometers in thickness for various applications. Because the uniform coating of nano-particles of doped metal oxide modifies the properties of metal oxide, thin films of cobalt-doped manganese oxide are prepared using the Jet nebulizer spray pyrolysis procedure at a temperature of 300°C in this study. The thin films are annealed in an air environment for two hours at various temperatures, including 350°C, 450°C, and 550°C. Cobalt thin films were produced and annealed for two hours at 550 °C in the air before being tested. The effect of annealing temperature and atomic percentage content of dopant cobalt in manganese oxide thin film on their properties were characterized by XRD, photoluminescence spectroscopy, UV-vis spectroscopic technique, scanning electron microscopy, and EDX. The characterization of the thin film reveals that these thin films are made up of uniformly coated doped metal oxide particles with (002) plan as a preferential orientation of crystal growth and band gap energy in the span of 2.5 -1.65 eV. The sensing property of the thin films towards ethanol was also characterized.

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Lam, Kin-Tak, Sheng-Joue Young, Yen-Lin Chu, et al. "Characteristics of Metal–Semiconductor–Metal Ultraviolet Photodetectors Based on Pure ZnO/Amorphous IGZO Thin-Film Structures." Journal of Nanomaterials 2021 (April 10, 2021): 1–6. http://dx.doi.org/10.1155/2021/6649200.

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In this study, metal–semiconductor–metal-structured ultraviolet (UV) photodetectors (PDs) based on pure zinc oxide (ZnO) and amorphous indium gallium zinc oxide (a-IGZO) thin films were fabricated and characterized. The ZnO seed layers were deposited on Corning glass substrates via a radio frequency (RF) magnetron sputtering technique. Results showed that under a 5 V applied bias; the dark currents of the pure ZnO and a-IGZO thin films were 0.112 pA and 2.85 nA, respectively. Meanwhile, the UV-to-visible rejection ratio of the pure ZnO and a-IGZO thin films were 14.33 and 256, respectively. Lastly, the PDs of thea-IGZO thin films had a lower leakage current and higher rejection ratio than that of the pure ZnO thin films from the UV to visible light region.

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Dissertations / Theses on the topic "Metal-oxide thin-films"

1

Snyder, Mark Q. "Modification of Semi-metal Oxide and Metal Oxide Powders by Atomic Layer Deposition of Thin Films." Fogler Library, University of Maine, 2007. http://www.library.umaine.edu/theses/pdf/SnyderMQ2007.pdf.

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Kiisk, Valter. "Optical investigation of metal-oxide thin films /." Online version, 2006. http://dspace.utlib.ee/dspace/bitstream/10062/115/1/kiiskvalter.pdf.

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Ponja, Sapna D. "Metal oxide thin films for optoelectronic applications." Thesis, University College London (University of London), 2018. http://discovery.ucl.ac.uk/10045545/.

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This thesis details the use of aerosol assisted chemical vapour deposition to deposit transparent conducting oxide thin films. Transparent conducting oxides are a special class of materials that exhibit high optical transparency as well as good electrical conductivity, two properties usually in contradiction with each other. The combination of these properties in one material has established an essential role for transparent conducting oxides in a range of applications such as flat screen displays, photovoltaic cells, gas sensors, low-emissive coatings and light emitting diodes. Aerosol assisted chemical vapour deposition is increasingly becoming recognised as a simple, low-cost and reliable technique for depositing thin films. It involves generating an aerosol mist from a solution containing the precursors that is transported with the aid of an inert or reactive carrier gas into the reaction chamber where deposition takes place on a heated substrate. Two of the attractive features of this method are its versatility in allowing the use of precursors that are not suitable for conventional chemical vapour deposition methods as the method depends on solubility rather than volatility and the facility to use multiple precursors simultaneously within a single vessel. The focus of this work is on doping and co-doping of metal oxide thin films, namely ZnO and SnO2, to enhance their optoelectronic properties. The ZnO films were doped with group III elements aluminium or gallium, and the SnO2 films were doped with multivalent elements antimony or tungsten. All four systems were co-doped by introducing fluorine to replace the oxygen ion in the lattice. Fluorine was used as the co-dopant because of its established use in fluorine doped tin(IV) oxide transparent conducting oxides, a commercially available product. Co-doping has received less attention compared with single cation doping largely because of the limitations of other deposition methods. The rationale for co-doping is that it would allow greater tuning of the optoelectronic properties of the transparent conducting oxides to suit specific applications. All films synthesised in this investigation were characterised using a wide range of techniques including X-ray diffraction, energy and/or wavelength dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy, scanning electron microscopy, UV-visible-near infrared spectroscopy and Hall effect measurements.

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Ren, Huilin. "Current Voltage Characteristics of a Semiconductor Metal Oxide Sensor." Fogler Library, University of Maine, 2001. http://www.library.umaine.edu/theses/pdf/RenH2001.pdf.

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Han, Sanggil. "Cu2O thin films for p-type metal oxide thin film transistors." Thesis, University of Cambridge, 2018. https://www.repository.cam.ac.uk/handle/1810/285099.

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The rapid progress of n-type metal oxide thin film transistors (TFTs) has motivated research on p-type metal oxide TFTs in order to realise metal oxide-based CMOS circuits which enable low power consumption large-area electronics. Cuprous oxide (Cu2O) has previously been proposed as a suitable active layer for p-type metal oxide TFTs. The two most significant challenges for achieving good quality Cu2O TFTs are to overcome the low field-effect mobility and an unacceptably high off-state current that are a feature of devices that have been reported to date. This dissertation focuses on improving the carrier mobility, and identifying the main origins of the low field-effect mobility and high off-state current in Cu2O TFTs. This work has three major findings. The first major outcome is a demonstration that vacuum annealing can be used to improve the carrier mobility in Cu2O without phase conversion, such as oxidation (CuO) or oxide reduction (Cu). In order to allow an in-depth discussion on the main origins of the very low carrier mobility in as-deposited films and the mobility enhancement by annealing, a quantitative analysis of the relative dominance of the main conduction mechanisms (i.e. trap-limited and grain-boundary-limited conduction) is performed. This shows that the low carrier mobility of as-deposited Cu2O is due to significant grain-boundary-limited conduction. In contrast, after annealing, grain-boundary-limited conduction becomes insignificant due to a considerable reduction in the energy barrier height at grain boundaries, and therefore trap-limited conduction dominates. A further mobility improvement by an increase in annealing temperature is explained by a reduction in the effect of trap-limited conduction resulting from a decrease in tail state density. The second major outcome of this work is the observation that grain orientation ([111] or [100] direction) of sputter-deposited Cu2O can be varied by control of the incident ion-to-Cu flux ratio. Using this technique, a systematic investigation on the effect of grain orientation on carrier mobility in Cu2O thin films is presented, which shows that the [100] Cu2O grain orientation is more favourable for realising a high carrier mobility. In the third and final outcome of this thesis, the temperature dependence of the drain current as a function of gate voltage along with the C-V characteristics reveals that minority carriers (electrons) cause the high off-state current in Cu2O TFTs. In addition, it is observed that an abrupt lowering of the activation energy and pinning of the Fermi energy occur in the off-state, which is attributed to subgap states at 0.38 eV below the conduction band minimum. These findings provide readers with the understanding of the main origins of the low carrier mobility and high off-state current in Cu2O TFTs, and the future research direction for resolving these problems.

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Yagoubi, Benabdella. "A study of some thin transition metal oxide films." Thesis, Brunel University, 1989. http://bura.brunel.ac.uk/handle/2438/5348.

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This thesis analyses the effect of varying the compositions of co-evaporated V205/TeO2, W03/CeO2, SiO/TeO2 and W03/TeO2 amorphous thin films on their electrical and optical properties. Some information about the electronic properties of these oxides may be obtained by comparison of the results. In the oxide systems containing transition metal ions the expression for hopping energy at low temperatures contains a term due to the hopping energy of polarons in addition to that due to the disorder. In the dielectric SiO/TeO2 thin films the distortion of 'the molecule is thought to be quite weak and thus the carriers do not form polarons. They would move by hopping at the band edge at low temperatures and by excitation to a mobility edge at high temperatures. The electrical conductivity of V205/TeO2 amorphous thin films is discussed in the light of the Mott(1968) theory. The optical absorption edge was found to obey the direct forbidden transitions equation cc ico=B(fiw-EOP)3'2. The frequency-squared dependence of the conductivity of W03/CeO2 thin films (high content of CeO2) in the frequency region where the capacitance is constant is associated with the lead resistance according to Street et al (1971). The optical energy gap of the films varies with the composition in same way as in doped crystalline semiconductors. The value of the, optical W03/Ce02 was calculated using the Davis and Mott (1970) formula for non-direct optical transitions. The capacitance of SiO/TeO2 thin films is found to be almost independent of frequency as well as of temperature. This is due to a strong ionic bonding which characterises a good insulator. The optical absorption edge of SiO/TeO2 is found to be sharper than that of W03/ CeO2 and very similar to that found in most crystalline solids. The value of the optical energy gap is calculated using the same formula as in W03/CeO2. The systematic change of the optical gap with composition is observed only in a limited range of compositions. The a. c electrical properties of W03/Te02 amorphous thin films are described using the Springett(1974) and Elliott(1977) models. The optical absorption edge of WO3/TeO2 is found to lead to new arguments about the origin of the Urbach edges.The a. c electrical conductivity shows a frequency dependence of the form as ca wS in all samples studied in the present work. The mechanism of conduction at low temperatures with the index varying from 0.5 to I is thought to be due to hopping of electrons between localized states in the gap. At high fields the d. c current shows a non-linear dependence on the applied electric field. This is thought to be due to either space charge or Schottky effects in the oxides containing transition metal ions. In SiO/TeO2 dielectric films, the non-linear dependence of current on the electric field is thought to be due to either the Poole-Frenkel effect or at slightly lower fields it could be due to impurities.

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7

Besharat, Zahra. "Adsorption of molecular thin films on metal and metal oxide surfaces." Doctoral thesis, KTH, Materialfysik, MF, 2016. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-195613.

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Metal and metal oxides are widely used in industry, and to optimize their performance their surfaces are commonly functionalized by the formation of thin films. Self-assembled monolayers (SAMs) are deposited on metals or metal oxides either from solution or by gas deposition. Thiols with polar terminal groups are utilized for creating the responsive surfaces which can interact electrostatically with other adsorbates. Surface charge effects wetting and adhesion, and many other surface properties. Polar terminal groups in thiols could be used to modify these factors. Mixed SAMs can provide more flexible surfaces, and could change the resulting surface properties under the influence of factors such as pH, temperature, and photo-illumination. Therefore, in order to control these phenomena by mixed polar-terminated thiols, it is necessary to understand the composition and conformation of the mixed SAMs and their response to these factors. In this work, mixtures of thiols with carboxylic and amino terminal groups were studied. Carboxylic and amino terminal groups of thiol interact with each other via hydrogen bonding in solution and form a complex. Complexes adsorb to the surface in non-conventional orientations. Unmixed SAMs from each type, either carboxylic terminated thiols or amino terminated thiols are in standing up orientation while SAMs from complexes are in an axially in-plane orientation. Selenol is an alternative to replace thiols for particular applications such as contact with biological matter which has a better compatibility with selenol than sulfur. However, the Se-C bond is weaker than the S-C bond which limits the application of selenol. Understanding the selenol adsorption mechanism on gold surfaces could shed some light on Se-C cleavage and so is investigated in this work. Se-C cleavage happens in the low coverage areas on the step since atoms at steps have lower coordination making them more reactive than atoms on the terraces. Another area where the self-assembly of molecules is of importance is for dye sensitized solar cells, which are based on the adsorption of the dye onto metal oxides surfaces such as TiO2.The interface between the SAM of dye and the substrate is an important factor to consider when designing dyes and surfaces in dye sensitized solar cells (DSSCs). The quality of the self-assembled monolayers of the dye on the TiO2 surface has a critical influence on the efficiency of the DSSCs. Creation of just a monolayer of dye on the surface could lead to an efficient current of photo-excited electrons to the TiO2 and degeneration of the dye by redox. This work, T-PAC dye showed island growth with some ad-layer that is not in contact with the surface, whereas the MP13 dye adsorption is laminar growth. Cuprite (Cu2O) is the initial and most common corrosion product for copper under atmospheric conditions. Copper could be a good replacement for noble metal as catalysts for methanol dehydrogenation. Knowledge about the structure of Cu2O(100) and Cu2O(111) surfaces could be used to obtain a deeper understanding of methanol dehydrogenation mechanisms with respect to adsorption sites on the surfaces. In this work, a detailed study was done of Cu2O(100) surface which revealed the possible surface structures as the result of different preparation conditions. Studies of the structure of Cu2O(100) and Cu2O(111) surfaces show that Cu2O(100) has a comparatively stable surface and reduces surface reactivity. As a consequence, dehydrogenation of methanol is more efficient on the Cu2O(111) surface. The hydrogen produced from methanol dehydrogenation is stored in oxygen adatom sites on both surfaces.<br><p>QC 20161107</p>

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Beach, Geoffrey S. D. "The COxFe₁₀₀₋x metal/native oxide multilayer /." Diss., Connect to a 24 p. preview or request complete full text in PDF format. Access restricted to UC IP addresses, 2003. http://wwwlib.umi.com/cr/ucsd/fullcit?p3090452.

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Rooth, Mårten. "Metal Oxide Thin Films and Nanostructures Made by ALD." Doctoral thesis, Uppsala University, Department of Materials Chemistry, 2008. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-8898.

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<p>Thin films of cobalt oxide, iron oxide and niobium oxide, and nanostructured thin films of iron oxide, titanium oxide and multilayered iron oxide/titanium oxide have been deposited by Atomic Layer Deposition (ALD). The metal oxides were grown using the precursor combinations CoI2/O2, Fe(Cp)2/O2, NbI5/O2 and TiI4/H2O. The samples were analysed primarily with respect to phase content, morphology and growth characteristics.</p><p>Thin films deposited on Si (100) were found to be amorphous or polycrystalline, depending on deposition temperature and the oxide deposited; cobalt oxide was also deposited on MgO (100), where it was found to grow epitaxially with orientation (001)[100]Co3O4||(001)[100]MgO. As expected, the polycrystalline films were rougher than the amorphous or the epitaxial films. The deposition processes showed properties characteristic of self-limiting ALD growth; all processes were found to have a deposition temperature independent growth region. The deposited films contained zero or only small amounts of precursor residues.</p><p>The nanostructured films were grown using anodic aluminium oxide (AAO) or carbon nanosheets as templates. Nanotubes could be manufactured by depositing a thin film which covers the pore walls of the AAO template uniformly; free-standing nanotubes retaining the structure of the template could be fabricated by removing the template. Multilayered nanotubes could be obtained by depositing multiple layers of titanium dioxide and iron oxide in the pores of the AAO template. Carbon nanosheets were used to make titanium dioxide nanosheets with a conducting graphite backbone. The nucleation of the deposited titanium dioxide could be controlled by acid treatment of the carbon nanosheets.</p>

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Söderlind, Fredrik. "Colloidal synthesis of metal oxide nanocrystals and thin films." Doctoral thesis, Linköpings universitet, Institutionen för fysik, kemi och biologi, 2008. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-11831.

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A main driving force behind the recent years’ immense interest in nanoscience and nanotechnology is the possibility of achieving new material properties and functionalities within, e.g., material physics, biomedicine, sensor technology, chemical catalysis, energy storing systems, and so on. New (theoretical) possibilities represent, in turn, a challenging task for chemists and physicists. An important feature of the present nanoscience surge is its strongly interdisciplinary character, which is reflected in the present work. In this thesis, nanocrystals and thin films of magnetic and ferroelectric metal oxides, e.g. RE2O3 (RE = Y, Gd, Dy), GdFeO3, Gd3Fe5O12, Na0.5K0.5NbO3, have been prepared by colloidal and sol-gel methods. The sizes of the nanocrystals were in the range 3-15 nm and different carboxylic acids, e.g. oleic or citric acid, were chemisorbed onto the surface of the nanoparticles. From FT-IR measurements it is concluded that the bonding to the surface takes place via the carboxylate group in a bidentate or bridging fashion, with some preference for the latter coordination mode. The magnetic properties of nanocrystalline Gd2O3 and GdFeO3 were measured, both with respect to magnetic resonance relaxivity and magnetic susceptibility. Both types of materials exhibit promising relaxivity properties, and may have the potential for use as positive contrast enhancing agents in magnetic resonance imaging (MRI). The nanocrystalline samples were also characterised by transmission electron microscopy (TEM), x-ray photoelectron spectroscopy (XPS), and quantum chemical calculations. Thin films of Na0.5K0.5NbO3, GdFeO3 and Gd3Fe5O12 were prepared by sol-gel methods and characterized by x-ray powder diffraction (XRPD) and scanning electron microscopy (SEM). Under appropriate synthesis conditions, rather pure phase materials could be obtained with grain sizes ranging from 50 to 300 nm. Magnetic measurements in the temperature range 2-350 K indicated that the magnetization of the perovskite phase GdFeO3 can be described as the sum of two contributing terms. One term (mainly) due to the spontaneous magnetic ordering of the iron containing sublattice, and the other a susceptibility term, attributable to the paramagnetic gadolinium sublattice. The two terms yield the relationship M(T)=M0(T)+χ(T)*H for the magnetization. The garnet phase Gd3Fe5O12 is ferrimagnetic and showed a compensation temperature Tcomp ≈ 295 K.

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Books on the topic "Metal-oxide thin-films"

1

Ezema, Fabian I., Chandrakant D. Lokhande, and Rajan Jose, eds. Chemically Deposited Nanocrystalline Metal Oxide Thin Films. Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-68462-4.

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Yagoubi, Benabdellah. A study of some thin transition metal oxide films. Brunel University, 1989.

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Bird, Daniel P. C. The investigation of thin metal oxide films by STM and RAIRS studies. UMIST, 1997.

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Roca, Alejandro G., Paolo Mele, Hanae Kijima-Aoki, et al., eds. Surfaces and Interfaces of Metal Oxide Thin Films, Multilayers, Nanoparticles and Nano-composites. Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-74073-3.

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1936-, Simonne J. J., and Buxo J. 1941-, eds. Insulating films on semiconductors: Proceedings of the international conference, INFOS 85, Toulouse, France, 16-18 April, 1985. North-Holland, 1986.

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Laconte, J. Micromachined thin-film sensors for SOI-CMOS co-integration. Springer, 2011.

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Thin film metal-oxides: Fundamentals and applications in electronics and energy. Springer, 2010.

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W, Eccleston, Uren M, and INFOS '91 (1991 :, eds. Insulating films on semiconductors 1991: Proceedings from the 7th biennial European conference, including satellite workshops on Silicon on Insulator: Materials and Device Technology and The Physics of Hot Electron Degradation in Si MOSFETs held at the University of Liverpool, 2nd to 6th April 1991. Adam Hilger, 1991.

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Habraken, F. H. P. M., ed. LPCVD silicon nitride and oxynitride films: Material and applications in integrated circuit technology. Springer-Verlag, 1991.

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Metal Oxide Thin Films: Synthesis, Characterization and Applications. MDPI, 2022. http://dx.doi.org/10.3390/books978-3-0365-1057-6.

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Book chapters on the topic "Metal-oxide thin-films"

1

Angelomé, Paula C., and M. Cecilia Fuertes. "Metal Nanoparticle–Mesoporous Oxide Nanocomposite Thin Films." In Handbook of Sol-Gel Science and Technology. Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-19454-7_146-1.

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Angelomé, Paula C., and M. Cecilia Fuertes. "Metal Nanoparticle–Mesoporous Oxide Nanocomposite Thin Films." In Handbook of Sol-Gel Science and Technology. Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-32101-1_146.

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Joshi, Ved Prakash, Nitish Kumar, and Rahul R. Salunkhe. "Nanoporous Metal Oxides for Supercapacitor Applications." In Chemically Deposited Nanocrystalline Metal Oxide Thin Films. Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-68462-4_23.

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Lokhande, V. C., C. H. Kim, A. C. Lokhande, Chandrakant D. Lokhande, and T. Ji. "Metal Oxides for Perovskite Solar Cells." In Chemically Deposited Nanocrystalline Metal Oxide Thin Films. Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-68462-4_8.

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Bulakhe, Ravindra N., Anuradha B. Bhalerao, and Insik In. "Mixed Transition Metal Oxides for Energy Applications." In Chemically Deposited Nanocrystalline Metal Oxide Thin Films. Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-68462-4_16.

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Lokhande, A. C., V. C. Lokhande, D. S. Dhawale, I. A. Qattan, Shashikant Patole, and Chandrakant D. Lokhande. "Optically Active Metal Oxides for Photovoltaic Applications." In Chemically Deposited Nanocrystalline Metal Oxide Thin Films. Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-68462-4_7.

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Onah, Emmanuel O., Jude N. Udeh, Sabastine Ezugwu, Assumpta C. Nwanya, and Fabian I. Ezema. "Recent Progress in Metal Oxide for Photovoltaic Application." In Chemically Deposited Nanocrystalline Metal Oxide Thin Films. Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-68462-4_5.

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Pujari, Rahul B., and Dong-Weon Lee. "Oxygen-Deficient Metal Oxide Nanostructures for Photocatalytic Activities." In Chemically Deposited Nanocrystalline Metal Oxide Thin Films. Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-68462-4_13.

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Sunil, Vaishak, and Rajan Jose. "Hybrid Nanocomposite Metal Oxide Materials for Supercapacitor Application." In Chemically Deposited Nanocrystalline Metal Oxide Thin Films. Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-68462-4_25.

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Okaro, Chukwujekwu Augustine, Onyeka Stanislaus Okwundu, Philips Chidubem Tagbo, Cyril Oluchukwu Ugwuoke, Sabastine Ezugwu, and Fabian I. Ezema. "Nanostructured Metal Oxide-Based Electrode Materials for Ultracapacitors." In Chemically Deposited Nanocrystalline Metal Oxide Thin Films. Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-68462-4_22.

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Conference papers on the topic "Metal-oxide thin-films"

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Kiriakidis, G., D. Dovinos, and M. Suchea. "Sensing using nanostructured metal oxide thin films." In Optics East 2006, edited by Nibir K. Dhar, Achyut K. Dutta, and M. Saif Islam. SPIE, 2006. http://dx.doi.org/10.1117/12.685369.

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Gomez-Escoto, R., M. Ghafari, B. Stahl, and H. Hahn. "Magnetoresistance of granular metal - oxide thin films." In IEEE International Magnetics Conference. IEEE, 1999. http://dx.doi.org/10.1109/intmag.1999.837540.

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Moghe, Shweta, A. D. Acharya, and S. B. Shrivastava. "Study of metal oxide doped polymeric thin films." In EMERGING INTERFACES OF PHYSICAL SCIENCES AND TECHNOLOGY 2019: EIPT2019. AIP Publishing, 2020. http://dx.doi.org/10.1063/5.0006263.

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Rengel, Dominik, Xia Wu, Linda Kothe, Xuyang Zhang, Sabrina Amrehn, and Thorsten Wagner. "Gas sensor based on metal oxide photonic crystals: the role of free carrier absorption." In Nanoengineering: Fabrication, Properties, Optics, Thin Films, and Devices XVI, edited by André-Jean Attias and Balaji Panchapakesan. SPIE, 2019. http://dx.doi.org/10.1117/12.2529385.

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Wood, Vanessa, Matthew Panzer, Jean-Michel Caruge, Jonathan Halpert, Moungi Bawendi, and Vladimir Bulovic. "Colloidally-Synthesized Nanocrystal LEDs Using Metal Oxide Thin Films." In Optics and Photonics for Advanced Energy Technology. OSA, 2009. http://dx.doi.org/10.1364/energy.2009.wc6.

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Fryc, Irena. "Electrical and optical characterization of metal oxide/metal/polymer multilayer thin films." In Tenth Polish-Czech-Slovak Optical Conference: Wave and Quantum Aspects of Contemporary Optics. SPIE, 1998. http://dx.doi.org/10.1117/12.301351.

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Hassan, Z., M. S. M. Saheed, and A. S. Yusof. "Metal oxide-based heterojunction thin films for solar cell applications." In 2019 International Energy and Sustainability Conference (IESC). IEEE, 2019. http://dx.doi.org/10.1109/iesc47067.2019.8976643.

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Ignatiev, A., N. J. Wu, S. Q. Liu, et al. "Resistance Switching Memory Effect in Transition Metal Oxide Thin Films." In 2006 7th Annual Non-Volatile Memory Technology Symposium. IEEE, 2006. http://dx.doi.org/10.1109/nvmt.2006.378886.

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Jankowski, Alan F. "Rate-controlled synthesis of composition-modulated metal oxide thin films." In SPIE's 1994 International Symposium on Optics, Imaging, and Instrumentation, edited by James D. Rancourt. SPIE, 1994. http://dx.doi.org/10.1117/12.185794.

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Evans, Peter J., Kathryn Prince, Gerry Triani, Kim S. Finnie, David R. G. Mitchell, and Christophe J. Barbe. "Characterization of thin metal oxide films grown by atomic layer deposition." In Microelectronics, MEMS, and Nanotechnology, edited by Jung-Chih Chiao, Alex J. Hariz, David N. Jamieson, Giacinta Parish, and Vijay K. Varadan. SPIE, 2004. http://dx.doi.org/10.1117/12.524052.

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