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Journal articles on the topic 'Metal-oxide thin-films'

Author: Grafiati

Published: 4 June 2021

Last updated: 26 January 2023

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1

Deki, Shigehito, and Yoshifumi Aoi. "Synthesis of metal oxide thin films by liquid-phase deposition method." Journal of Materials Research 13, no. 4 (1998): 883–90. http://dx.doi.org/10.1557/jmr.1998.0119.

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A novel wet process to synthesize metal oxide thin films has been developed. The process is called the Liquid-Phase Deposition (LPD) method. In this method, metal oxide or hydroxide thin films are formed on the substrate through the ligand-exchanging (hydrolysis) equilibrium reaction of metal-fluoro complex species and the F− consumption reaction of a F− scavenger. The LPD method is a unique soft solution process, and is performed by very simple procedures. In this paper, we develop a method of preparing composite oxide thin films, Pt-dispersed titanium oxide, and iron-nickel binary oxide thin films.

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2

Kuo, Y., and C. C. Lin. "Electroluminescence from Metal Oxide Thin Films." ECS Solid State Letters 2, no. 8 (2013): Q59—Q61. http://dx.doi.org/10.1149/2.002308ssl.

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3

Moshe, Hagay, Maarten Vanbel, Ventsislav Kolev Valev, Thierry Verbiest, David Dressler, and Yitzhak Mastai. "Chiral Thin Films of Metal Oxide." Chemistry - A European Journal 19, no. 31 (2013): 10295–301. http://dx.doi.org/10.1002/chem.201300760.

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4

Wayne Goodman, D. "Surface spectroscopic studies of model supported-metal catalysts." Proceedings, annual meeting, Electron Microscopy Society of America 53 (August 13, 1995): 394–95. http://dx.doi.org/10.1017/s0424820100138348.

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A new surface science approach to the study of supported-metal catalysts will be described. Thin oxide films (~100 Å) of SiO2, Al2O3, or MgO supported on a refractory metal substrate (e.g., Mo or W) have been prepared by depositing the oxide metal precursor in a background of oxygen (ca. l×l0-5 Torr) [1]. The thin-film catalysts facilitate investigation by an array of surface techniques, many of which are precluded when applied to the corresponding bulk oxide [1,2]. In particular, the oxide films have been characterized by AES, ELS, HREELS, XPS, UPS, ISS, IRAS, and TD spectroscopies and shown to have essentially identical electronic and vibrational properties of the corresponding bulk oxides. These studies indicate then that these films can serve as convenient models for oxide catalysts or metal supports. Metal thin films (e.g., Cu, Pd, Ni) have subsequently been deposited onto the oxide films and the properties of the metal/oxide system then studied with the above array of surface techniques [3]. By properly defining the metal thin film thickness, metal particles of varying sizes can be synthesized with dispersions from a few nanometers to tens of nanometers.

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5

Zainol, Mohd Nizar, Shafinaz Sobihana Shariffudin, Mohamad Hafiz Mamat, and Mohamad Rusop. "Effect of Oxygen Annealing on the Electrical and Optical Properties of Zinc Oxide Thin Film." Advanced Materials Research 1109 (June 2015): 598–602. http://dx.doi.org/10.4028/www.scientific.net/amr.1109.598.

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This paper presents on the effect of oxygen annealing on the electrical properties and optical properties. Sol gel spin coating is used to deposit zinc oxide thin films on glass substrates to obtain the uniform thin films. Here, the ZnO thin films were annealed in oxygen environment with various oxygen concentration of 20 to 40 sccm. This metal oxide has shown its ability as a very high optical transmittance which at 20 sccm thin films give the highest transmittance that is 97.44% and at 40 sccm thin films give the lowest transmittance that is 87.61%. Next, this metal oxide also has shown its ability in fairly good electrical properties which the lowest resistivity at 40 sccm thin films is 1.61× 104 Ωcm-1.

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6

Carretero-Genevrier, Adrian, Glenna L. Drisko, David Grosso, Cédric Boissiere, and Clement Sanchez. "Mesoscopically structured nanocrystalline metal oxide thin films." Nanoscale 6, no. 23 (2014): 14025–43. http://dx.doi.org/10.1039/c4nr02909g.

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7

Stahl, B., M. Ghafari, R. Gomez-Escoto, and H. Hahn. "Magnetoresistance of granular metal-oxide thin films." IEEE Transactions on Magnetics 35, no. 5 (1999): 2880–82. http://dx.doi.org/10.1109/20.801012.

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8

Fazinić, S., I. Bogdanović, E. Cereda, M. Jakšić, and V. Valković. "Stoichiometric determination of thin metal oxide films." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 75, no. 1-4 (1993): 371–74. http://dx.doi.org/10.1016/0168-583x(93)95678-x.

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9

S. Saranya, N. Sethupathi, and P. Mahalingam. "EFFECT OF COBALT DOPING AND ANNEALING ON PROPERTIES OF MANGANESE OXIDE THIN FILMS PREPARED USING JET NEBULIZER SPRAY PYROLYSIS TECHNIQUE." RASAYAN Journal of Chemistry 15, no. 04 (2022): 2901–7. http://dx.doi.org/10.31788/rjc.2022.1547009.

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The controlled deposition and post-deposition treatments are fundamental steps in the synthesis of thin films in the range of nanometer to several micrometers in thickness for various applications. Because the uniform coating of nano-particles of doped metal oxide modifies the properties of metal oxide, thin films of cobalt-doped manganese oxide are prepared using the Jet nebulizer spray pyrolysis procedure at a temperature of 300°C in this study. The thin films are annealed in an air environment for two hours at various temperatures, including 350°C, 450°C, and 550°C. Cobalt thin films were produced and annealed for two hours at 550 °C in the air before being tested. The effect of annealing temperature and atomic percentage content of dopant cobalt in manganese oxide thin film on their properties were characterized by XRD, photoluminescence spectroscopy, UV-vis spectroscopic technique, scanning electron microscopy, and EDX. The characterization of the thin film reveals that these thin films are made up of uniformly coated doped metal oxide particles with (002) plan as a preferential orientation of crystal growth and band gap energy in the span of 2.5 -1.65 eV. The sensing property of the thin films towards ethanol was also characterized.

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10

Lam, Kin-Tak, Sheng-Joue Young, Yen-Lin Chu, et al. "Characteristics of Metal–Semiconductor–Metal Ultraviolet Photodetectors Based on Pure ZnO/Amorphous IGZO Thin-Film Structures." Journal of Nanomaterials 2021 (April 10, 2021): 1–6. http://dx.doi.org/10.1155/2021/6649200.

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In this study, metal–semiconductor–metal-structured ultraviolet (UV) photodetectors (PDs) based on pure zinc oxide (ZnO) and amorphous indium gallium zinc oxide (a-IGZO) thin films were fabricated and characterized. The ZnO seed layers were deposited on Corning glass substrates via a radio frequency (RF) magnetron sputtering technique. Results showed that under a 5 V applied bias; the dark currents of the pure ZnO and a-IGZO thin films were 0.112 pA and 2.85 nA, respectively. Meanwhile, the UV-to-visible rejection ratio of the pure ZnO and a-IGZO thin films were 14.33 and 256, respectively. Lastly, the PDs of thea-IGZO thin films had a lower leakage current and higher rejection ratio than that of the pure ZnO thin films from the UV to visible light region.

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11

Abduev, A., A. Akhmedov, A. Asvarov, et al. "Advanced processes for low-temperature formation of functional metal oxide based thin films." Journal of Physics: Conference Series 2056, no. 1 (2021): 012046. http://dx.doi.org/10.1088/1742-6596/2056/1/012046.

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Abstract The analysis the discharge processes in magnetron plasma, target sputtering processes, as well as nucleation and formation of oxide thin films during dc magnetron sputtering is carried out. Particular attention is paid to the phenomenon of instabilities of the current-voltage characteristics of magnetron plasma during the sputtering of oxide targets, the processes of structural transformations of the surface of metal oxide targets under ion bombardment impact, and the mechanisms of low-temperature magnetron deposition of metal oxide thin films. Based on the results of the analysis performed the optimal routes for improving technologies for the low-temperature formation of transparent conductive oxide thin films have been discussed.

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12

Oros, C., Anurat Wisitsoraat, Pichet Limsuwan, M. Horpathum, V. Patthanasettakul, and Adisorn Tuantranont. "Gas-Sensing Property Evaluation of Reactively Sputtered Chromium Oxide Thin Films." Advanced Materials Research 55-57 (August 2008): 285–88. http://dx.doi.org/10.4028/www.scientific.net/amr.55-57.285.

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Metal oxide thin film materials, including SnO2, TiO2, WO3, MoO3, ZnO, have been widely studied for gas sensing applications. However, new gas-sensing materials with distinct and diverse characteristics for new sensing applications such as electronic nose are still being explored. Presently, gas sensing properties of other metal oxides have not yet been extensively explored. Chromium oxide is an interesting metal oxide for gas sensor because of its temperature stability and moderate electrical conductivity. Nevertheless, there have been very few studies on gas sensing behaviors of this material. In this work, chromium oxide thin films were systematically studied by reactive sputtering with varying sputtering parameter including oxygen flow rate. Structural characterization by means of scanning electron microscopy and X-ray diffraction reveals that the films have sub-micometer grain-size with Rhombohedral phase of Cr2O3. Gas-sensing performances of sputtered chromium oxide thin film have been characterized toward ethanol and acetylene sensing. It was found that chromium oxide thin films exhibit p-type conductivity with increased resistance when exposed to ethanol and acetylene, which are reducing gases. In addition, sensitivity to both acetylene and ethanol tend to improve as oxygen flow rate increases. Furthermore, the chromium oxide thin films exhibit high sensitivity at moderate temperature of 250-300 °C with minimum operating temperature of 200 °C.

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13

Abdullah-Hamead, Alaa Aladdin. "Advanced Structured of MgO Thin Film for Bio Applications." Materials Science Forum 1002 (July 2020): 319–30. http://dx.doi.org/10.4028/www.scientific.net/msf.1002.319.

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Extensive efforts to further promoting the Anti-Bacteria and structural properties of thin films to reach reliability and possibility of commercialization, the chemical Tri-metal oxide component was verification as Anti-Bacteria factor in this paper. Pure and mixed thin films of magnesium oxide MgO was prepared by evaporation assisted laser Nedmyum - YAG pulse Nd: YAG laser system, MgO enhanced by adding Ti and Se, at (0.5, 1, 1.5 and 2%) by weight percentage. After that, calcination is done at 400 °C for 30 min. Structural and anti-bacterial growth inspections were performed. Experimental results showed that structural properties have improved significantly with the development of a MgO thin films with tri-metal oxide; Magnesium titanium oxide Mg2TiO4 and Magnesium selenate MgSeO4 phases. Moreover, there has been an enhancement in anti-bacteria properties, which makes these thin films more reliable for protection against bacteria.

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14

George, Sheby Mary, Bo Keun Park, Chang Gyoun Kim, and Taek-Mo Chung. "Heteroleptic Group 2 Metal Precursors for Metal Oxide Thin Films." European Journal of Inorganic Chemistry 2014, no. 11 (2014): 2002–10. http://dx.doi.org/10.1002/ejic.201301296.

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15

Mohamat Kasim, Shafaq Mardhiyana, Nor Azira Akma Shaari, Raudah Abu Bakar, and Sukreen Hana Herman. "Switching Behavior of Titania-Zinc Oxide Composites Thin Films." Applied Mechanics and Materials 749 (April 2015): 308–12. http://dx.doi.org/10.4028/www.scientific.net/amm.749.308.

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Single layer of titanium dioxide (TiO2) is common metal oxide in fabricating memristor device. In this study, two types of memristor with composite metal oxide thin films will be demonstrated. The two types of memristor are titanium dioxide (TiO2) thin film coated on zinc oxide (ZnO) thin film and ZnO coated on TiO2 thin film. Sol-gel spin coating method was to coat metal oxide thin film and sputtering method for depositing the metal contact. Platinum (Pt) was selected as the top electrode and indium tin oxide (ITO) as the bottom electrode. The electrical characteristics were defined by performing I-V measurement using two point probe equipment. I-V characteristics showed shape of pinched hysteresis loop for both samples. Sample with TiO2 coated on ZnO has slightly higher Roff/Ron ratio than sample ZnO coated on TiO2 which means it more memristive than another one. The cross-section of sample with TiO2 coated on ZnO had been performed as well by using Field-Emission Scanning Electron Microscopy (FESEM).

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16

Mende, Mathias, Florian Carstens, Henrik Ehlers, and Detlev Ristau. "Preferential sputtering of metal oxide mixture thin films." Journal of Vacuum Science & Technology A 39, no. 2 (2021): 023406. http://dx.doi.org/10.1116/6.0000799.

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17

Pellegrino, L., I. Pallecchi, E. Bellingeri, et al. "AFM Nanopatterning of Transition Metal Oxide Thin Films." Journal of Nanoscience and Nanotechnology 10, no. 7 (2010): 4471–76. http://dx.doi.org/10.1166/jnn.2010.2363.

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18

Vayssieres, L. "Aqueous purpose-built nanostructured metal oxide thin films." International Journal of Materials and Product Technology 18, no. 4/5/6 (2003): 330. http://dx.doi.org/10.1504/ijmpt.2003.002494.

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19

Malik, Alexander, Ana Sêco, Elvira Fortunato, and Rodrigo Martins. "Microcrystalline thin metal oxide films for optoelectronic applications." Journal of Non-Crystalline Solids 227-230 (May 1998): 1092–95. http://dx.doi.org/10.1016/s0022-3093(98)00248-8.

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20

Steele, John J., Michael T. Taschuk, and Michael J. Brett. "Nanostructured Metal Oxide Thin Films for Humidity Sensors." IEEE Sensors Journal 8, no. 8 (2008): 1422–29. http://dx.doi.org/10.1109/jsen.2008.920715.

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21

Lange, S., I. Sildos, V. Kiisk, J. Aarik, and M. Kirm. "Photoluminescence of RE-doped thin metal oxide films." physica status solidi (c) 2, no. 1 (2005): 326–29. http://dx.doi.org/10.1002/pssc.200460176.

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22

Larson, David J., Alfred Cerezo, Jean Juraszek, Kazuhiro Hono, and Guido Schmitz. "Atom-Probe Tomographic Studies of Thin Films and Multilayers." MRS Bulletin 34, no. 10 (2009): 732–37. http://dx.doi.org/10.1557/mrs2009.247.

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AbstractThis article reviews investigations of the growth and reactions within thin metal and oxide films using atom-probe tomography. Included in this review are (1) studies of interfacial and growth reactions in magnetoresistive metallic, metal/oxide, and magnetic magnetostrictive multilayers; (2) comparison of selected portions of these results to simulated film growth using molecular dynamics; and (3) study of the origin of room-temperature ferromagnetism in dilute magnetic semiconductors. Information of this type is useful in order to understand the formation and thermal evolution of thin films (and to compare to theory and modeling) and, ultimately, to permit further optimization of devices based on thin films.

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23

Alam, Mir Waqas, Sajid Ali Ansari, and Faheem Ahmed. "Editorial for the Special Issue “Organic/Metal Oxide Thin Films for Optoelectronic/Photovoltaic and Sensing Applications”." Crystals 13, no. 2 (2023): 173. http://dx.doi.org/10.3390/cryst13020173.

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The Special Issue entitled “Organic/Metal Oxide Thin Films for Optoelectronic/Photovoltaic and Sensing Applications” is comprised of thirteen original research articles devoted to the development and designing of new and novel organic/metal oxide thin film-based nanomaterials (NMs) for electrochemical and optoelectronic applications [...]

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24

Sato, Yuichi, Toshifumi Suzuki, Hiroyuki Mogami, Fumito Otake, Hirotoshi Hatori, and Suguru Igarashi. "Solid Phase Growth of some Metal and Metal Oxide Thin Films on Sapphire and Quartz Glass Substrates." Materials Science Forum 753 (March 2013): 505–9. http://dx.doi.org/10.4028/www.scientific.net/msf.753.505.

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Solid phase growth of thin films of copper (Cu), aluminum (Al) and zinc oxide (ZnO) on single crystalline sapphire and quartz glass substrates were tried by heat-treatments and their crystallization conditions were investigated. ZnO thin films relatively easily recrystallized even when they were deposited on the amorphous quartz glass substrate. On the other hand, Cu and Al thin films hardly recrystallized when they were deposited on the quartz glass substrate. The metal thin films could be recrystallized at only extremely narrow windows of the heat-treatment conditions when they were deposited on the single crystalline sapphire substrate. The window of the solid phase heteroepitaxial growth condition of the Al film was wider than that of the Cu film.

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25

Lee, Byoung H., and Myung M. Sung. "Selective Atomic Layer Deposition of Metal Oxide Thin Films on Patterned Self-Assembled Monolayers Formed by Microcontact Printing." Journal of Nanoscience and Nanotechnology 7, no. 11 (2007): 3758–64. http://dx.doi.org/10.1166/jnn.2007.018.

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We demonstrate a selective atomic layer deposition of TiO2, ZrO2, and ZnO thin films on patterned alkylsiloxane self-assembled monolayers. Microcontact printing was done to prepare patterned monolayers of the alkylsiloxane on Si substrates. The patterned monolayers define and direct the selective deposition of the metal oxide thin films using atomic layer deposition. The selective atomic layer deposition is based on the fact that the metal oxide thin films are selectively deposited only on the regions exposing the silanol groups of the Si substrates because the regions covered with the alkylsiloxane monolayers do not have any functional group to react with precursors.

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26

Lee, Byoung H., and Myung M. Sung. "Selective Atomic Layer Deposition of Metal Oxide Thin Films on Patterned Self-Assembled Monolayers Formed by Microcontact Printing." Journal of Nanoscience and Nanotechnology 7, no. 11 (2007): 3758–64. http://dx.doi.org/10.1166/jnn.2007.18067.

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We demonstrate a selective atomic layer deposition of TiO2, ZrO2, and ZnO thin films on patterned alkylsiloxane self-assembled monolayers. Microcontact printing was done to prepare patterned monolayers of the alkylsiloxane on Si substrates. The patterned monolayers define and direct the selective deposition of the metal oxide thin films using atomic layer deposition. The selective atomic layer deposition is based on the fact that the metal oxide thin films are selectively deposited only on the regions exposing the silanol groups of the Si substrates because the regions covered with the alkylsiloxane monolayers do not have any functional group to react with precursors.

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27

TAY, B. K., Z. W. ZHAO, S. P. LAU, and J. X. GAO. "GROWTH AND STRUCTURAL STUDY OF NANOCRYSTALLINE TITANIUM OXIDE AND ZIRCONIUM OXIDE THIN FILMS DEPOSITED AT LOW TEMPERATURES." International Journal of Nanoscience 04, no. 04 (2005): 795–801. http://dx.doi.org/10.1142/s0219581x05003565.

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Titanium oxide and zirconium oxide thin films were deposited at low temperatures (not exceeding 350°C) by off-plane filtered cathodic vacuum arc (FCVA). The film structures were studied by XRD and Raman spectra. For titanium oxide thin films, amorphous structure remains up to 230°C, and anatase film with the crystallite size of 16 nm is observed at 330°C as confirmed by XRD and Raman analysis. For zirconium oxide, the film structure develops from amorphous at room temperature to polycrystalline state at 150°C and above. Moreover, for the crystallized films, preferred orientation is along [-111] direction. At 150°C the films possess nano-sized crystallites (less than 15 nm). For these two kinds of metal oxide thin films, surface roughness both increases with the growth temperature.

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28

Tsau, Chun-Huei, Zhang-Yan Hwang, and Swe-Kai Chen. "The Microstructures and Electrical Resistivity of (Al, Cr, Ti)FeCoNiOxHigh-Entropy Alloy Oxide Thin Films." Advances in Materials Science and Engineering 2015 (2015): 1–6. http://dx.doi.org/10.1155/2015/353140.

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The (Al, Cr, Ti)FeCoNi alloy thin films were deposited by PVD and using the equimolar targets with same compositions from the concept of high-entropy alloys. The thin films became metal oxide films after annealing at vacuum furnace for a period; and the resistivity of these thin films decreased sharply. After optimum annealing treatment, the lowest resistivity of the FeCoNiOx, CrFeCoNiOx, AlFeCoNiOx, and TiFeCoNiOxfilms was 22, 42, 18, and 35 μΩ-cm, respectively. This value is close to that of most of the metallic alloys. This phenomenon was caused by delaminating of the alloy oxide thin films because the oxidation was from the surfaces of the thin films. The low resistivity of these oxide films was contributed to the nonfully oxidized elements in the bottom layers and also vanishing of the defects during annealing.

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29

JIANG, H., H. W. LIU, H. Yu, F. GAO, and J. M. LIU. "DIELECTRIC PROPERTY OF LaAlO3 THIN FILMS DOPED WITH MAGNETIC Co AND Co3O4 CLUSTERS." International Journal of Modern Physics B 19, no. 15n17 (2005): 2676–81. http://dx.doi.org/10.1142/s0217979205031511.

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The thin films of Co -doped and Co3O4-doped dielectric LaAlO3 (LAO) by co-ablation of magnetic metal Co and dielectric LAO on Pt – Ti – SiO2 – Si substrates have been prepared by pulsed laser deposition. A significant enhancement of dielectric constant of LAO upon doping of Co and cobalt oxide clusters is observed. Furthermore, modulation of the dielectric constant of the thin films by applying a magnetic field is verified, obviously due to the ferromagnetism of Co metal and Co oxide clusters embedded in the LAO thin films. A series of microstructural and dielectric characterizations on the as-prepared thin films have been performed and the mechanism underlying the dielectric enhancement upon the doping of Co and Co3O4 clusters is discussed.

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30

Oniki, Yusuke, Guy Vereecke, Eugenio Dentoni Litta, et al. "RMG Patterning by Digital Wet Etching of Polycrystalline Metal Films." Solid State Phenomena 282 (August 2018): 132–38. http://dx.doi.org/10.4028/www.scientific.net/ssp.282.132.

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A self-limiting wet etching of metal thin films has been developed for the replacement metal gate patterning in advanced logic devices, which will have aggressively scaled gate length and fin pitches. A uniform and highly selective wet etching of polycrystalline TiN films is demonstrated by a diffusion-limiting oxide growth on the metal surfaces as well as a subsequent highly selective oxide removal.

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31

WENDEL, H., H. HOLZSCHUH, H. SUHR, G. ERKER, S. DEHNICKE, and M. MENA. "THIN ZIRCONIUM DIOXIDE AND YTTRIUM OXIDE-STABILIZED ZIRCONIUM DIOXIDE FILMS PREPARED BY PLASMA-CVD." Modern Physics Letters B 04, no. 19 (1990): 1215–25. http://dx.doi.org/10.1142/s0217984990001537.

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Thin zirconia (zirconium dioxide) films are deposited by PECVD using as precursors organometallic compounds, metal alkoxides, and metal β-diketonates. The properties of the films depend on the substrate temperature, power density and the nature and partial pressure of the precursor. Thin films of zirconia stabilized with yttria (yttrium oxide) are formed at relatively low deposition temperatures (500°C) using the β-diketones of zirconium and yttrium.

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32

Moumen, Abderrahim, Gayan C. W. Kumarage, and Elisabetta Comini. "P-Type Metal Oxide Semiconductor Thin Films: Synthesis and Chemical Sensor Applications." Sensors 22, no. 4 (2022): 1359. http://dx.doi.org/10.3390/s22041359.

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This review focuses on the synthesis of p-type metal-oxide (p-type MOX) semiconductor thin films, such as CuO, NiO, Co3O4, and Cr2O3, used for chemical-sensing applications. P-type MOX thin films exhibit several advantages over n-type MOX, including a higher catalytic effect, low humidity dependence, and improved recovery speed. However, the sensing performance of CuO, NiO, Co3O4, and Cr2O3 thin films is strongly related to the intrinsic physicochemical properties of the material and the thickness of these MOX thin films. The latter is heavily dependent on synthesis techniques. Many techniques used for growing p-MOX thin films are reviewed herein. Physical vapor-deposition techniques (PVD), such as magnetron sputtering, thermal evaporation, thermal oxidation, and molecular-beam epitaxial (MBE) growth were investigated, along with chemical vapor deposition (CVD). Liquid-phase routes, including sol–gel-assisted dip-and-spin coating, spray pyrolysis, and electrodeposition, are also discussed. A review of each technique, as well as factors that affect the physicochemical properties of p-type MOX thin films, such as morphology, crystallinity, defects, and grain size, is presented. The sensing mechanism describing the surface reaction of gases with MOX is also discussed. The sensing characteristics of CuO, NiO, Co3O4, and Cr2O3 thin films, including their response, sensor kinetics, stability, selectivity, and repeatability are reviewed. Different chemical compounds, including reducing gases (such as volatile organic compounds (VOCs), H2, and NH3) and oxidizing gases, such as CO2, NO2, and O3, were analyzed. Bulk doping, surface decoration, and heterostructures are some of the strategies for improving the sensing capabilities of the suggested pristine p-type MOX thin films. Future trends to overcome the challenges of p-type MOX thin-film chemical sensors are also presented.

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33

Deshmukh, Pratap, Sergey Yarmolenko, Sudheer Neralla, and Jagannathan Sankar. "Corrosion Analysis of Mg/Al₂O₃ Bio-Degradable Nanolaminate Thin-Films Fabricated Using DC/Pulsed DC Magnetron-Sputtering Technique." ECS Meeting Abstracts MA2022-02, no. 14 (2022): 2596. http://dx.doi.org/10.1149/ma2022-02142596mtgabs.

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Multilayered Thin films are effective in controlling the rate of corrosion of magnesium alloys used for bio-implants applications. It’s been proven that corrosion of metallic implants can be delayed by depositing multilayered metal-oxide thin films. In this study, Mg/Al2O3 nanolaminates, along with different metal oxides, were deposited using DC and pulsed DC magnetron sputtering methods at room temperature on glass substrates. Applicability of these metal-oxide nanolaminates to corrosion control was studied by bulk volumetric degradation measurement technique using solutions such as Saline, HANKS and PBS. Mg/Al2O3 films were also studied under different flow conditions by varying flow rates and pore growth rate and degradation process are measured by time-lapsed technique on optical microscope. Effect of the oxide layer thickness, saline flow rate, total pressure, structural characteristics of oxide coatings and sputtering deposition parameters on pore density and corrosion rate was investigated. Pulsed DC magnetron sputtering enables preparation of thin films with control over pore growth and distribution. Results have shown that repeatable pore density and corrosion rate can be achieved through magnetron sputter-deposited Mg/Al2O3 nanolaminates.

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34

Liaqat, Rimsha, Muhammad Adil Mansoor, Javed Iqbal, et al. "Fabrication of Metal (Cu and Cr) Incorporated Nickel Oxide Films for Electrochemical Oxidation of Methanol." Crystals 11, no. 11 (2021): 1398. http://dx.doi.org/10.3390/cryst11111398.

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Methanol electrochemical oxidation in a direct methanol fuel cell (DMFC) is considered to be an efficient pathway for generating renewable energy with low pollutant emissions. NiO−CuO and Ni0.95Cr0.05O2+δ thin films were synthesized using a simple dip-coating method and tested for the electro-oxidation of methanol. These synthesized electrocatalysts were characterized by X-ray diffraction spectroscopy (XRD), X-ray photoelectron spectroscopy (XPS), Scanning electron microscopy (SEM), Energy-dispersive X-ray spectroscopy (EDS), and Raman spectroscopy. Different electrochemical techniques were used to investigate the catalytic activity of these prepared electrocatalysts for methanol oxidation, including linear sweep voltammetry (LSV), electrochemical impedance spectroscopy (EIS), and chronoamperometry (CA). In the presence of 0.3 M methanol, the current densities of NiO−CuO and Ni0.95Cr0.05O2+δ thin films were found to be 12.2 mA·cm−2 and 6.5 mA·cm−2, respectively. The enhanced catalytic activity of NiO−CuO and Ni0.95Cr0.05O2+δ thin films may be a result of the synergistic effect between different metal oxides. The Chronoamperometry (CA) results of the mixed metal oxide thin films confirmed their stability in basic media. Furthermore, the findings of electrochemical impedance spectroscopy (EIS) of mixed metal oxide thin films demonstrated a lower charge transfer resistance as compared to the pure NiO, CuO, and Cr2O3 thin films.

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35

Nordseth, Ørnulf, Raj Kumar, Kristin Bergum, et al. "Metal Oxide Thin-Film Heterojunctions for Photovoltaic Applications." Materials 11, no. 12 (2018): 2593. http://dx.doi.org/10.3390/ma11122593.

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Silicon-based tandem solar cells incorporating low-cost, abundant, and non-toxic metal oxide materials can increase the conversion efficiency of silicon solar cells beyond their conventional limitations with obvious economic and environmental benefits. In this work, the electrical characteristics of a metal oxide thin-film heterojunction solar cell based on a cuprous oxide (Cu2O) absorber layer were investigated. Highly Al-doped n-type ZnO (AZO) and undoped p-type Cu2O thin films were prepared on quartz substrates by magnetron sputter deposition. The electrical and optical properties of these thin films were determined from Hall effect measurements and spectroscopic ellipsometry. After annealing the Cu2O film at 900 °C, the majority carrier (hole) mobility and the resistivity were measured at 50 cm2/V·s and 200 Ω·cm, respectively. Numerical modeling was carried out to investigate the effect of band alignment and interface defects on the electrical characteristics of the AZO/Cu2O heterojunction. The analysis suggests that the incorporation of a buffer layer can enhance the performance of the heterojunction solar cell as a result of reduced conduction band offset.

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Sarkar, Debabrata, Dereje Hailu Taffa, Sergey Ishchuk, et al. "Tailor-made oxide architectures attained by molecularly permeable metal-oxide organic hybrid thin films." Chem. Commun. 50, no. 65 (2014): 9176–78. http://dx.doi.org/10.1039/c4cc04104f.

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Faezahana, Mokhter, Nayan Nafarizal, Jia Wei Low, et al. "2D and 3D Analyses of Metal Oxide Thin Films Examined by Atomic Force Microscope." Applied Mechanics and Materials 773-774 (July 2015): 716–19. http://dx.doi.org/10.4028/www.scientific.net/amm.773-774.716.

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Atomic force microscope (AFM) is a useful tool to capture the two- and three-dimensional image of height and size of nanostructured thin film. It operate by measuring the forces between a sharp tip and surface of the measured sample. In addition, AFM is equipped with powerful software for image processing to interpret experimental results in detail. For example, by using the height and scanning length parameters of measured sample, average roughness and root mean square roughness can be evaluated. In the present works, the effect of image flattening process toward the surface roughness and surface fluctuations of metal oxide thin films will be presented. Set of samples were prepared by magnetron sputtering deposition and sol-gel coating techniques. In gas sensor industries using metal oxide thin film, surface roughness of metal oxide thin films are very important in order to improve the sensitivity and respond time of gas sensor. Therefore, optimization of thin film deposition and characterization are very important. The correlation between the three-dimensional image and thin film deposition and image processing parameters will also be presented.

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38

Conley, J. F., Y. Ono, D. J. Tweet, and R. Solanki. "Pulsed deposition of metal–oxide thin films using dual metal precursors." Applied Physics Letters 84, no. 3 (2004): 398–400. http://dx.doi.org/10.1063/1.1643545.

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Pergament, A. L., V. P. Malinenko, L. A. Aleshina, E. L. Kazakova, and N. A. Kuldin. "Electrical Switching in Thin Film Structures Based on Molybdenum Oxides." Journal of Experimental Physics 2014 (September 18, 2014): 1–6. http://dx.doi.org/10.1155/2014/951297.

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We report on the experimental study of electrical instabilities in thin film structures on the basis of molybdenum oxides. Thin films of molybdenum oxide are obtained by thermal vacuum evaporation and anodic oxidation. The results of X-ray structural analysis, investigation of optical and electrical properties, are presented. It is shown that the initial vacuum-deposited oxide represents amorphous MoO3. In the MOM (metal-oxide-metal) structures with Mo oxide films obtained by the two methods, the effect of electrical switching with an S-shaped current-voltage characteristic is found. We put forward a hypothesis according to which the switching mechanism is associated with the development of electrical instability caused by the insulator-to-metal transition in Mo8O23. The switching channel, comprising this lower valence oxide, emerges in the initial film during the process of electrical forming of the MOM structure. The obtained results indicate the possibility of application of these structures in oxide micro- and nanoelectronics as electronic switches and other electronic devices.

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Cochran, Elizabeth A., Keenan N. Woods, Darren W. Johnson, Catherine J. Page, and Shannon W. Boettcher. "Unique chemistries of metal-nitrate precursors to form metal-oxide thin films from solution: materials for electronic and energy applications." Journal of Materials Chemistry A 7, no. 42 (2019): 24124–49. http://dx.doi.org/10.1039/c9ta07727h.

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Woo, Sungmin, Sang A. Lee, Hyeona Mun, et al. "Enhanced magnetic and thermoelectric properties in epitaxial polycrystalline SrRuO3 thin films." Nanoscale 10, no. 9 (2018): 4377–84. http://dx.doi.org/10.1039/c7nr09627e.

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SUZUKI, Naoki, Hidekazu TANAKA, Yoshihiko YANAGISAWA, et al. "Nano Fabrication of Functional Transition Metal Oxide Thin Films." Journal of the Vacuum Society of Japan 51, no. 1 (2008): 37–43. http://dx.doi.org/10.3131/jvsj2.51.37.

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43

LEE, Sang A., Jegon LEE, and Woo Seok CHOI. "Electrochemical Catalytic Activity in Transition-Metal-Oxide Thin Films." Physics and High Technology 26, no. 5 (2017): 21–26. http://dx.doi.org/10.3938/phit.26.021.

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44

Gallagher, Dennis, Francis Scanlan, Raymond Houriet, Hans Jörg Mathieu, and Terry A. Ring. "Indium-tin oxide thin films by metal-organic decomposition." Journal of Materials Research 8, no. 12 (1993): 3135–44. http://dx.doi.org/10.1557/jmr.1993.3135.

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In2O3–SnO2 films were produced by thermal decomposition of a deposit which was dip coated on borosilicate glass substrates from an acetylacetone solution of indium and tin acetoacetonate. Thermal analysis showed complete pyrolysis of the organics by 400 °C. The thermal decomposition reaction generated acetylacetone gas and was found to be first order with an activation energy of 13.6 Kcal/mole. Differences in thermal decomposition between the film and bulk materials were noted. As measured by differential scanning calorimetry using a 40 °C/min temperature ramp, the glass transition temperature of the deposited oxide film was found to be ∼462 °C, and the film crystallization temperature was found to be ∼518 °C. For film fabrication, thermal decomposition of the films was performed at 500 °C in air for 1 h followed by reduction for various times at 500 °C in a reducing atmosphere. Crystalline films resulted for these conditions. A resistivity of ∼1.01 × 10−3 Ω · cm, at 8 wt. % tin oxide with a transparency of ∼95% at 400 nm, has been achieved for a 273 nm thick film.

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Bouclé, Johann, Punniamoorthy Ravirajan, and Jenny Nelson. "Hybrid polymer–metal oxide thin films for photovoltaic applications." Journal of Materials Chemistry 17, no. 30 (2007): 3141. http://dx.doi.org/10.1039/b706547g.

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Merkulov, Vladimir I., Jon R. Fox, Hong-Cheng Li, Weidong Si, A. A. Sirenko, and X. X. Xi. "Metal–oxide bilayer Raman scattering in SrTiO3 thin films." Applied Physics Letters 72, no. 25 (1998): 3291–93. http://dx.doi.org/10.1063/1.121627.

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Tung, Mai Thanh, Hoang Thi Bich Thuy, and Le Thi Thu Hang. "Metal Doped Manganese Oxide Thin Films for Supercapacitor Application." Journal of Nanoscience and Nanotechnology 15, no. 9 (2015): 6949–56. http://dx.doi.org/10.1166/jnn.2015.10525.

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Kiriakidis, G., K. Moschovis, I. Kortidis, and V. Binas. "Ultra-low gas sensing utilizing metal oxide thin films." Vacuum 86, no. 5 (2012): 495–506. http://dx.doi.org/10.1016/j.vacuum.2011.10.013.

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Hong, Nguyen Hoa. "Ferromagnetism in transition-metal-doped semiconducting oxide thin films." Journal of Magnetism and Magnetic Materials 303, no. 2 (2006): 338–43. http://dx.doi.org/10.1016/j.jmmm.2006.01.067.

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Croitoru, N., A. Seidman, and K. Yassin. "Secondary electron emission of metal oxide sputtered thin films." Thin Solid Films 191, no. 2 (1990): 361–67. http://dx.doi.org/10.1016/0040-6090(90)90386-r.

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