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1

Heime, Klaus. InGaAs field-effect transistors. Taunton, Somerset, England: Research Studies Press, 1989.

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2

Duen, Ho Fat, and United States. National Aeronautics and Space Administration., eds. Modeling of metal-ferroelectric-semiconductor field effect transistors. [Washington, D.C: National Aeronautics and Space Administration, 1998.

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3

Duen, Ho Fat, and United States. National Aeronautics and Space Administration., eds. Modeling of metal-ferroelectric-semiconductor field effect transistors. [Washington, D.C: National Aeronautics and Space Administration, 1998.

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4

Pierret, Robert F. Field effect devices. 2nd ed. Reading, Mass: Addison-Wesley Pub. Co., 1990.

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5

Baliga, B. Jayant. Advanced power MOSFET concepts. New York: Springer, 2010.

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6

Soclof, Sidney. Metal-oxide-semiconductor field-effect transistors (MOSFETS): Principles and applications. Boston: Artech House, 1996.

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7

Shur, Michael. Physics of semiconductor devices: Software and manual. London: Prentice-Hall, 1990.

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8

Oktyabrsky, Serge, and Peide D. Ye. Fundamentals of III-V semiconductor MOSFETs. New York: Springer, 2010.

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9

universitet, Uppsala, ed. Investigations of microelectronic devices based on metal-semiconductor contacts. Uppsala: Uppsala University, 1989.

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10

T, Andre Noah, and Simon Lucas M, eds. MOSFETS: Properties, preparations to performance. New York: Nova Science Publishers, 2008.

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11

Korec, Jacek. Low voltage power MOSFETs: Design, performance and applications. New York: Springer, 2011.

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12

Paul, Reinhold. MOS-Feldeffekttransistoren. Berlin: Springer-Verlag, 1994.

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13

1952-, Chattopadhyay Swapan, and Bera L. K, eds. Strained-Si heterostructure field effect devices. New York: Taylor & Francis, 2007.

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14

Baliga, Jayant. Silicon RF power MOSFETs. Singapore: World Scientific, 2005.

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15

Amara, Amara, and Rozeau Olivier, eds. Planar double-gate transistor: From technology to circuit. [Dordrecht?]: Springer, 2009.

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16

Taylor, B. E. Power Mosfet design. Chichester, W. Sussex, England: Wiley, 1993.

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17

Tsividis, Yannis. Operation and modeling of the MOS transistor. 3rd ed. New York: Oxford University Press, 2010.

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18

Tsividis, Yannis. Operation and modeling of the MOS transistor. 3rd ed. New York: Oxford University Press, 2010.

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19

Tsividis, Yannis. Operation and modeling of the MOS transistor. 3rd ed. New York: Oxford University Press, 2011.

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20

Cherem, Schneider Márcio, ed. MOSFET modeling for circuit analysis and design. Singapore: World Scientific, 2007.

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21

Jürgen, Mattausch Hans, and Ezaki Tatsuya, eds. The physics and modeling of MOSFETS: Surface-potential model HiSIM. Singapore: World Scientific, 2008.

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22

Wikström, Mats Olaf Tobias. MOS-controlled switches for high-voltage application. Konstanz: Hartung-Gorre, 2001.

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23

Hänsch, W. The drift diffusion equation and its applications in MOSFET modeling. Wien: Springer-Verlag, 1991.

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24

Hänsch, W. The drift diffusion equation and its applications in MOSFET modeling. Wien: Springer-Verlag, 1991.

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25

Center, Lewis Research, ed. Analog synthesized fast-variable linear load. Brook Park, Ohio: Sverdrup Technology, Inc., Lewis Research Center Group, 1991.

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26

Center, Lewis Research, ed. Analog synthesized fast-variable linear load. Brook Park, Ohio: Sverdrup Technology, Inc., Lewis Research Center Group, 1991.

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27

Linder, Stefan. Power semiconductors. Lausanne, Switzerland: EPFL Press, 2006.

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28

Schroder, Dieter K. Advanced MOS devices. Reading, Mass: Addison-Wesley Pub. Co., 1987.

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29

Warner, R. M. MOSFET theory and design. New York: Oxford University Press, 1999.

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30

Schroder, Dieter K. Advanced MOS devices. Reading, Mass: Addison-Wesley Pub. Co., 1990.

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31

Chaudhry, Amit. Fundamentals of Nanoscaled Field Effect Transistors. New York, NY: Springer New York, 2013.

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32

Saijets, Jan. MOSFET RF characterization using bulk and SOI CMOS technologies. [Espoo, Finland]: VTT Technical Research Centre of Finland, 2007.

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33

Wilson, C. L. MOS1: A program for two-dimensional analysis of Si MOSFETs. Gaithersburg, Md: U.S. Dept. of Commerce, National Bureau of Standards, 1985.

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34

Hisham, Haddara, ed. Characterization methods for submicron MOSFETs. Boston: Kluwer Academic Publishers, 1995.

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35

L, Blue J., ed. MOS1: A program for two-dimensional analysis of Si MOSFETs. Gaithersburg, Md: U.S. Dept. of Commerce, National Bureau of Standards, 1985.

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36

L, Wilson C. MOS1: A program for two-dimensional analysis of Si MOSFETs. Gaithersburg, MD: U.S. Dept. of Commerce, National Bureau of Standards, 1985.

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37

Blaser, Markus. Monolithically integrated InGaAs/Inp photodiode-junction field-effect transistor receivers for fiber-optic telecommunication. Konstanz: Hartung-Gorre, 1997.

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38

B, Walker John L., ed. High-power GaAs FET amplifiers. Boston: Artech House, 1993.

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39

Foty, D. MOSFET modeling with SPICE: Principles and practice. Upper Saddle River, NJ: Prentice Hall PTR, 1997.

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40

Warner, R. M. Transistors: Fundamentals for the integrated-circuit engineer. Malabar, Fla: R.E. Krieger Pub. Co., 1990.

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41

Bufler, Fabian M. Full-band Monte Carlo simulation of nanoscale strained silicon MOSFETs. Konstanz: Hartung-Gorre, 2003.

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42

Tsividis, Yannis. Operation and modeling of the MOS transistor. 2nd ed. Boston: WCB/McGraw-Hill, 1999.

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43

Tsividis, Yannis. Operation and modeling of the MOS transistor. New York: McGraw-Hill, 1987.

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44

Tsividis, Yannis. Operation and modeling of the MOS transistor. 2nd ed. New York: Oxford University Press, 1999.

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45

Fundamentals Of Nanoscaled Field Effect Transistors. Springer-Verlag New York Inc., 2013.

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46

Physics of semiconductor devices. Englewood Cliffs, N.J: Prentice Hall, 1990.

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47

Oktyabrsky, Serge, and Peide Ye. Fundamentals of III-V Semiconductor MOSFETs. Springer, 2014.

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48

Oktyabrsky, Serge, and Peide Ye. Fundamentals of III-V Semiconductor MOSFETs. Springer, 2010.

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49

Korec, Jacek. Low Voltage Power MOSFETs: Design, Performance and Applications. Springer, 2011.

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50

Canfield, Philip C. A P-well GaAs MESFET technology. 1990.

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