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Journal articles on the topic 'Metal-semiconductor interfaces'

Author: Grafiati

Published: 4 June 2021

Last updated: 6 February 2022

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1

HIROSE, Kazuyuki, and Iwao OHDOMARI. "Metal/semiconductor interfaces." Hyomen Kagaku 10, no. 10 (1989): 850–55. http://dx.doi.org/10.1380/jsssj.10.850.

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2

Williams, R. H. "Semiconductor–Metal Interfaces." Physica Scripta T29 (January 1, 1989): 209–12. http://dx.doi.org/10.1088/0031-8949/1989/t29/039.

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3

Weaver, John H. "Metal‐Semiconductor Interfaces." Physics Today 39, no. 1 (1986): 24–30. http://dx.doi.org/10.1063/1.881062.

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4

Brillson, L. J. "Metal-semiconductor interfaces." Surface Science 299-300 (January 1994): 909–27. http://dx.doi.org/10.1016/0039-6028(94)90706-4.

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5

Williams, R. H. "Metal-semiconductor interfaces." Surface Science Letters 251-252 (July 1991): A306. http://dx.doi.org/10.1016/0167-2584(91)90818-c.

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6

Williams, R. H. "Metal-semiconductor interfaces." Surface Science 251-252 (July 1991): 12–21. http://dx.doi.org/10.1016/0039-6028(91)90945-o.

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7

Lay, G. Le, M. Abraham, A. Kahn, K. Hricovini, and J. E. Bonnet. "Abrupt metal-semiconductor interfaces." Physica Scripta T35 (January 1, 1991): 261–67. http://dx.doi.org/10.1088/0031-8949/1991/t35/052.

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8

Weitering, H. H. "Epitaxial metal-semiconductor interfaces." Materials Science and Engineering: B 14, no. 3 (1992): 281–90. http://dx.doi.org/10.1016/0921-5107(92)90310-6.

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9

Sinclair, Robert. "Reactions at metal-semiconductor interfaces." Proceedings, annual meeting, Electron Microscopy Society of America 47 (August 6, 1989): 448–49. http://dx.doi.org/10.1017/s0424820100154214.

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Examination of the architecture of a semiconductor-based microelectronics device shows that metallic, highly conductive components are an integral part of the miniature circuits. As geometries become increasingly small (e.g. at the sub-micron level) the structure at critical interfaces influences the electrical performance to a greater extent. Accordingly metal-semiconductor junctions have significant technological importance, in addition to any natural scientific interest associated with the bonding of two unlike materials. This article reviews some of our recent work on this topic, with part

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10

Niles, D. W., M. Tang, J. McKinley, R. Zanoni, and G. Margaritondo. "From heterojunction interfaces to metal-semiconductor interfaces." Applied Surface Science 41-42 (January 1990): 139–43. http://dx.doi.org/10.1016/0169-4332(89)90046-9.

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11

MATTHAI, C. C., and P. ASHU. "COMPUTER SIMULATION OF METAL-SEMICONDUCTOR AND SEMICONDUCTOR-SEMICONDUCTOR INTERFACES." Le Journal de Physique Colloques 51, no. C1 (1990): C1–873—C1–878. http://dx.doi.org/10.1051/jphyscol:19901137.

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12

KIM, H., F. HASHIO, and T. SAKURAI. "METAL-SEMICONDUCTOR (Si, GaAs) INTERFACES." Le Journal de Physique Colloques 50, no. C8 (1989): C8–449—C8–451. http://dx.doi.org/10.1051/jphyscol:1989876.

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13

Koide, Yasuo, and Masanori Murakami. "Energy Barrier Formed at Metal/Semiconductor and Semiconductor/Semiconductor Interfaces." Materia Japan 35, no. 5 (1996): 501–5. http://dx.doi.org/10.2320/materia.35.501.

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14

Van den Hoek, P. J., and E. J. Baerends. "Chemical bonding at metal-semiconductor interfaces." Applied Surface Science 41-42 (January 1990): 236–40. http://dx.doi.org/10.1016/0169-4332(89)90063-9.

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15

Erickson, J. W., T. B. Fryberger, and S. Semancik. "Metal/semiconductor interfaces on SnO2(110)." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 6, no. 3 (1988): 1593–98. http://dx.doi.org/10.1116/1.575333.

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16

Deneke, Christoph, Wilfried Sigle, Ulrike Eigenthaler, Peter A. van Aken, Gisela Schütz, and Oliver G. Schmidt. "Interfaces in semiconductor/metal radial superlattices." Applied Physics Letters 90, no. 26 (2007): 263107. http://dx.doi.org/10.1063/1.2742323.

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17

Ludeke, R., G. Jezequel, and A. Taleb-Ibrahimi. "Delocalization Effects at Metal-Semiconductor Interfaces." Physical Review Letters 61, no. 5 (1988): 601–4. http://dx.doi.org/10.1103/physrevlett.61.601.

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18

Wu, X., E. S. Yang, and H. L. Evans. "Negative capacitance at metal‐semiconductor interfaces." Journal of Applied Physics 68, no. 6 (1990): 2845–48. http://dx.doi.org/10.1063/1.346442.

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19

Sands, Timothy D. "Nanoscale engineering of metal/semiconductor interfaces." JOM 45, no. 2 (1993): 61–64. http://dx.doi.org/10.1007/bf03222874.

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20

Palmino, Frank, Philippe Dumas, Frank Thibaudau, Philippe Mathiez, Christian Mouttet, and Frank Salvan. "S.T.M. studies on semiconductor surfaces and metal-semiconductor interfaces." Microscopy Microanalysis Microstructures 1, no. 5-6 (1990): 463–70. http://dx.doi.org/10.1051/mmm:0199000105-6046300.

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21

Mönch, Winfried. "Electronic properties of ideal and interface-modified metal-semiconductor interfaces." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 14, no. 4 (1996): 2985. http://dx.doi.org/10.1116/1.588947.

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22

Wu, Ping, and Yingzhi Zeng. "Quantifying the relationship between interface chemistry and metal electronegativity of metal–semiconductor interfaces." Journal of Materials Chemistry 20, no. 46 (2010): 10345. http://dx.doi.org/10.1039/c0jm01731k.

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23

Sporken, R., P. A. Thiry, P. Xhonneux, R. Caudano, and J. P. Delrue. "Spectroscopic study of metal/semimetal and metal/semiconductor interfaces." Applied Surface Science 41-42 (January 1990): 201–6. http://dx.doi.org/10.1016/0169-4332(89)90057-3.

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24

Robertson, John. "Band alignment at metal-semiconductor and metal-oxide interfaces." physica status solidi (a) 207, no. 2 (2009): 261–69. http://dx.doi.org/10.1002/pssa.200982411.

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25

FLORES, F. "ALKALI-ATOM ADSORPTION ON SEMICONDUCTOR SURFACES: METALLIZATION AND SCHOTTKY-BARRIER FORMATION." Surface Review and Letters 02, no. 04 (1995): 513–37. http://dx.doi.org/10.1142/s0218625x95000480.

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Alkali metals deposited on weakly ionic semiconductors are neither reactive nor form large three-dimensional islands, offering an ideal system in which Schottky junctions can be analyzed. In this paper, the alkali-metal-semiconductor interface is reviewed with a special emphasis on the formation of the Schottky barrier. Two regimes are clearly differentiated for the deposition of AMs on a semiconductor: in the high-coverage limit the Schottky barrier is shown to depend, for not very defective interfaces, on the semiconductor charge neutrality level. For low coverages, different one- and two-di

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26

Ortega, J., J. Sánchez-Dehesa, and F. Flores. "Early-stage formation of metal-semiconductor interfaces." Physical Review B 37, no. 14 (1988): 8516–18. http://dx.doi.org/10.1103/physrevb.37.8516.

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27

Monch, W. "On the physics of metal-semiconductor interfaces." Reports on Progress in Physics 53, no. 3 (1990): 221–78. http://dx.doi.org/10.1088/0034-4885/53/3/001.

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28

Bandyopadhyay, Pathikrit, and Bruce A. Bunker. "Reflection EXAFS studies of metal-semiconductor interfaces." Physica B: Condensed Matter 158, no. 1-3 (1989): 653–54. http://dx.doi.org/10.1016/0921-4526(89)90425-0.

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29

Burstein, L., J. Bregman, and Yoram Shapira. "Characterization of interface states at III‐V compound semiconductor‐metal interfaces." Journal of Applied Physics 69, no. 4 (1991): 2312–16. http://dx.doi.org/10.1063/1.348712.

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30

Brillson, L. J. "Interface bonding, chemical reactions, and defect formation at metal-semiconductor interfaces." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 25, no. 4 (2007): 943–49. http://dx.doi.org/10.1116/1.2432348.

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31

Bista, Dinesh, Turbasu Sengupta, and Shiv N. Khanna. "Massive dipoles across the metal–semiconductor cluster interface: towards chemically controlled rectification." Physical Chemistry Chemical Physics 23, no. 34 (2021): 18975–82. http://dx.doi.org/10.1039/d1cp02420e.

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An interface between a metallic cluster (MgAl12) and a semiconducting cluster (Re6Se8(PMe3)5) is shown to be marked by a massive dipole reminiscent of a dipolar layer leading to a Schottky barrier at metal–semiconductor interfaces.

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32

Kim, Heeyoung, Ye Ji Kim, Yeon Sik Jung, and Jeong Young Park. "Enhanced flux of chemically induced hot electrons on a Pt nanowire/Si nanodiode during decomposition of hydrogen peroxide." Nanoscale Advances 2, no. 10 (2020): 4410–16. http://dx.doi.org/10.1039/d0na00602e.

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To investigate the charge transfer at the metal–semiconductor interface, novel Pt nanowires/Si nanodiodes were fabricated. By detecting hot electrons during H<sub>2</sub>O<sub>2</sub> decomposition, higher transmission probability for charge transport through metal–oxide interfaces was observed.

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33

Wang, Qian, Yangfan Shao, and Xingqiang Shi. "Mechanism of charge redistribution at the metal–semiconductor and semiconductor–semiconductor interfaces of metal–bilayer MoS2 junctions." Journal of Chemical Physics 152, no. 24 (2020): 244701. http://dx.doi.org/10.1063/5.0010849.

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34

Zazpe, R., P. Stoliar, F. Golmar, R. Llopis, F. Casanova, and L. E. Hueso. "Resistive switching in rectifying interfaces of metal-semiconductor-metal structures." Applied Physics Letters 103, no. 7 (2013): 073114. http://dx.doi.org/10.1063/1.4818730.

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35

Salvan, F., A. Humbert, P. Dumas, and F. Thibaudau. "Scanning tunneling microscopy (S.T.M.) of semiconductor surfaces and metal-semiconductor interfaces." Annales de Physique 13, no. 3 (1988): 133–51. http://dx.doi.org/10.1051/anphys:01988001303013300.

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36

Irokawa, Yoshihiro. "Characterization of the Metal-Semiconductor Interface of Pt-GaN Diode Hydrogen Sensors." Materials Science Forum 740-742 (January 2013): 473–76. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.473.

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In this paper, interaction mechanism of hydrogen with GaN metal-insulator-semiconductor (MIS) diodes has been investigated, focusing on the metal/semiconductor interfaces. As a result, the following three points are revealed: First, MIS Pt-SiO2-GaN diodes show a marked improvement in detection sensitivity, suggesting that the device interface plays a critical role in sensing. Second, exposure of the diodes to hydrogen is found to change the conduction mechanisms from Fowler-Nordheim tunneling to Pool-Frenkel emission. Third, interface trap level density of the diodes is found to be reduced by

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37

Saleh, Abdulnasser S. "Metal-Semiconductor Interfaces Investigated by Positron Annihilation Spectroscopy." World Journal of Condensed Matter Physics 06, no. 02 (2016): 68–74. http://dx.doi.org/10.4236/wjcmp.2016.62010.

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38

Akimoto, Koichi. "Metal/Semiconductor Interfaces Studied by X-Ray Diffraction." Materia Japan 34, no. 7 (1995): 862–66. http://dx.doi.org/10.2320/materia.34.862.

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39

Butera, R. A., and C. A. Hollingsworth. "Mechanism for reactive chemistry at metal-semiconductor interfaces." Physical Review B 37, no. 18 (1988): 10487–95. http://dx.doi.org/10.1103/physrevb.37.10487.

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40

Miyano, K. E., David M. King, C. J. Spindt, et al. "Potential-barrier measurements at clustered metal-semiconductor interfaces." Physical Review B 43, no. 14 (1991): 11806–14. http://dx.doi.org/10.1103/physrevb.43.11806.

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41

Thangadurai, P., Yulia Lumelsky, Michael S. Silverstein, and Wayne D. Kaplan. "TEM specimen preparation of semiconductor–PMMA–metal interfaces." Materials Characterization 59, no. 11 (2008): 1623–29. http://dx.doi.org/10.1016/j.matchar.2008.02.007.

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42

Banerjee, T., E. Haq, M. H. Siekman, J. C. Lodder, and R. Jansen. "Ballistic hole emission microscopy on metal-semiconductor interfaces." IEEE Transactions on Magnetics 41, no. 10 (2005): 2642–44. http://dx.doi.org/10.1109/tmag.2005.854738.

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43

Hill, I. G., A. Rajagopal, A. Kahn, and Y. Hu. "Molecular level alignment at organic semiconductor-metal interfaces." Applied Physics Letters 73, no. 5 (1998): 662–64. http://dx.doi.org/10.1063/1.121940.

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44

Sin, Wai‐Cheong D., N. M. Salansky, and I. I. Glass. "Effects of shock waves on metal‐semiconductor interfaces." Journal of Applied Physics 65, no. 6 (1989): 2289–92. http://dx.doi.org/10.1063/1.342842.

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45

Smit, G. D. J., S. Rogge, and T. M. Klapwijk. "Enhanced tunneling across nanometer-scale metal–semiconductor interfaces." Applied Physics Letters 80, no. 14 (2002): 2568–70. http://dx.doi.org/10.1063/1.1467980.

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46

Tung, R. T. "Electron transport at metal-semiconductor interfaces: General theory." Physical Review B 45, no. 23 (1992): 13509–23. http://dx.doi.org/10.1103/physrevb.45.13509.

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47

JIMBO, A., T. HASHIZUME, T. SAKATA, and T. SAKURAI. "AN ATOM-PROBE STUDY OF SEMICONDUCTOR-METAL INTERFACES." Le Journal de Physique Colloques 47, no. C2 (1986): C2–321—C2–327. http://dx.doi.org/10.1051/jphyscol:1986249.

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48

Lindau, I., T. Kendelewicz, N. Newman, R. S. List, M. D. Williams, and W. E. Spicer. "Electronic properties of metal/III–V semiconductor interfaces." Surface Science 162, no. 1-3 (1985): 591–604. http://dx.doi.org/10.1016/0039-6028(85)90953-7.

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49

Lindau, I., T. Kendelewicz, N. Newman, R. S. List, M. D. Williams, and W. E. Spicer. "Electronic properties of metal/III–V semiconductor interfaces." Surface Science Letters 162, no. 1-3 (1985): A605—A606. http://dx.doi.org/10.1016/0167-2584(85)90310-x.

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50

Brillson, L. J. "Advances in characterizing and controlling metal-semiconductor interfaces." Applications of Surface Science 22-23 (May 1985): 948–68. http://dx.doi.org/10.1016/0378-5963(85)90228-4.

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