Journal articles on the topic 'Metal-semiconductor interfaces'
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HIROSE, Kazuyuki, and Iwao OHDOMARI. "Metal/semiconductor interfaces." Hyomen Kagaku 10, no. 10 (1989): 850–55. http://dx.doi.org/10.1380/jsssj.10.850.
Full textWilliams, R. H. "Semiconductor–Metal Interfaces." Physica Scripta T29 (January 1, 1989): 209–12. http://dx.doi.org/10.1088/0031-8949/1989/t29/039.
Full textWeaver, John H. "Metal‐Semiconductor Interfaces." Physics Today 39, no. 1 (1986): 24–30. http://dx.doi.org/10.1063/1.881062.
Full textBrillson, L. J. "Metal-semiconductor interfaces." Surface Science 299-300 (January 1994): 909–27. http://dx.doi.org/10.1016/0039-6028(94)90706-4.
Full textWilliams, R. H. "Metal-semiconductor interfaces." Surface Science Letters 251-252 (July 1991): A306. http://dx.doi.org/10.1016/0167-2584(91)90818-c.
Full textWilliams, R. H. "Metal-semiconductor interfaces." Surface Science 251-252 (July 1991): 12–21. http://dx.doi.org/10.1016/0039-6028(91)90945-o.
Full textLay, G. Le, M. Abraham, A. Kahn, K. Hricovini, and J. E. Bonnet. "Abrupt metal-semiconductor interfaces." Physica Scripta T35 (January 1, 1991): 261–67. http://dx.doi.org/10.1088/0031-8949/1991/t35/052.
Full textWeitering, H. H. "Epitaxial metal-semiconductor interfaces." Materials Science and Engineering: B 14, no. 3 (1992): 281–90. http://dx.doi.org/10.1016/0921-5107(92)90310-6.
Full textSinclair, Robert. "Reactions at metal-semiconductor interfaces." Proceedings, annual meeting, Electron Microscopy Society of America 47 (August 6, 1989): 448–49. http://dx.doi.org/10.1017/s0424820100154214.
Full textNiles, D. W., M. Tang, J. McKinley, R. Zanoni, and G. Margaritondo. "From heterojunction interfaces to metal-semiconductor interfaces." Applied Surface Science 41-42 (January 1990): 139–43. http://dx.doi.org/10.1016/0169-4332(89)90046-9.
Full textMATTHAI, C. C., and P. ASHU. "COMPUTER SIMULATION OF METAL-SEMICONDUCTOR AND SEMICONDUCTOR-SEMICONDUCTOR INTERFACES." Le Journal de Physique Colloques 51, no. C1 (1990): C1–873—C1–878. http://dx.doi.org/10.1051/jphyscol:19901137.
Full textKIM, H., F. HASHIO, and T. SAKURAI. "METAL-SEMICONDUCTOR (Si, GaAs) INTERFACES." Le Journal de Physique Colloques 50, no. C8 (1989): C8–449—C8–451. http://dx.doi.org/10.1051/jphyscol:1989876.
Full textKoide, Yasuo, and Masanori Murakami. "Energy Barrier Formed at Metal/Semiconductor and Semiconductor/Semiconductor Interfaces." Materia Japan 35, no. 5 (1996): 501–5. http://dx.doi.org/10.2320/materia.35.501.
Full textVan den Hoek, P. J., and E. J. Baerends. "Chemical bonding at metal-semiconductor interfaces." Applied Surface Science 41-42 (January 1990): 236–40. http://dx.doi.org/10.1016/0169-4332(89)90063-9.
Full textErickson, J. W., T. B. Fryberger, and S. Semancik. "Metal/semiconductor interfaces on SnO2(110)." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 6, no. 3 (1988): 1593–98. http://dx.doi.org/10.1116/1.575333.
Full textDeneke, Christoph, Wilfried Sigle, Ulrike Eigenthaler, Peter A. van Aken, Gisela Schütz, and Oliver G. Schmidt. "Interfaces in semiconductor/metal radial superlattices." Applied Physics Letters 90, no. 26 (2007): 263107. http://dx.doi.org/10.1063/1.2742323.
Full textLudeke, R., G. Jezequel, and A. Taleb-Ibrahimi. "Delocalization Effects at Metal-Semiconductor Interfaces." Physical Review Letters 61, no. 5 (1988): 601–4. http://dx.doi.org/10.1103/physrevlett.61.601.
Full textWu, X., E. S. Yang, and H. L. Evans. "Negative capacitance at metal‐semiconductor interfaces." Journal of Applied Physics 68, no. 6 (1990): 2845–48. http://dx.doi.org/10.1063/1.346442.
Full textSands, Timothy D. "Nanoscale engineering of metal/semiconductor interfaces." JOM 45, no. 2 (1993): 61–64. http://dx.doi.org/10.1007/bf03222874.
Full textPalmino, Frank, Philippe Dumas, Frank Thibaudau, Philippe Mathiez, Christian Mouttet, and Frank Salvan. "S.T.M. studies on semiconductor surfaces and metal-semiconductor interfaces." Microscopy Microanalysis Microstructures 1, no. 5-6 (1990): 463–70. http://dx.doi.org/10.1051/mmm:0199000105-6046300.
Full textMönch, Winfried. "Electronic properties of ideal and interface-modified metal-semiconductor interfaces." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 14, no. 4 (1996): 2985. http://dx.doi.org/10.1116/1.588947.
Full textWu, Ping, and Yingzhi Zeng. "Quantifying the relationship between interface chemistry and metal electronegativity of metal–semiconductor interfaces." Journal of Materials Chemistry 20, no. 46 (2010): 10345. http://dx.doi.org/10.1039/c0jm01731k.
Full textSporken, R., P. A. Thiry, P. Xhonneux, R. Caudano, and J. P. Delrue. "Spectroscopic study of metal/semimetal and metal/semiconductor interfaces." Applied Surface Science 41-42 (January 1990): 201–6. http://dx.doi.org/10.1016/0169-4332(89)90057-3.
Full textRobertson, John. "Band alignment at metal-semiconductor and metal-oxide interfaces." physica status solidi (a) 207, no. 2 (2009): 261–69. http://dx.doi.org/10.1002/pssa.200982411.
Full textFLORES, F. "ALKALI-ATOM ADSORPTION ON SEMICONDUCTOR SURFACES: METALLIZATION AND SCHOTTKY-BARRIER FORMATION." Surface Review and Letters 02, no. 04 (1995): 513–37. http://dx.doi.org/10.1142/s0218625x95000480.
Full textOrtega, J., J. Sánchez-Dehesa, and F. Flores. "Early-stage formation of metal-semiconductor interfaces." Physical Review B 37, no. 14 (1988): 8516–18. http://dx.doi.org/10.1103/physrevb.37.8516.
Full textMonch, W. "On the physics of metal-semiconductor interfaces." Reports on Progress in Physics 53, no. 3 (1990): 221–78. http://dx.doi.org/10.1088/0034-4885/53/3/001.
Full textBandyopadhyay, Pathikrit, and Bruce A. Bunker. "Reflection EXAFS studies of metal-semiconductor interfaces." Physica B: Condensed Matter 158, no. 1-3 (1989): 653–54. http://dx.doi.org/10.1016/0921-4526(89)90425-0.
Full textBurstein, L., J. Bregman, and Yoram Shapira. "Characterization of interface states at III‐V compound semiconductor‐metal interfaces." Journal of Applied Physics 69, no. 4 (1991): 2312–16. http://dx.doi.org/10.1063/1.348712.
Full textBrillson, L. J. "Interface bonding, chemical reactions, and defect formation at metal-semiconductor interfaces." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 25, no. 4 (2007): 943–49. http://dx.doi.org/10.1116/1.2432348.
Full textBista, Dinesh, Turbasu Sengupta, and Shiv N. Khanna. "Massive dipoles across the metal–semiconductor cluster interface: towards chemically controlled rectification." Physical Chemistry Chemical Physics 23, no. 34 (2021): 18975–82. http://dx.doi.org/10.1039/d1cp02420e.
Full textKim, Heeyoung, Ye Ji Kim, Yeon Sik Jung, and Jeong Young Park. "Enhanced flux of chemically induced hot electrons on a Pt nanowire/Si nanodiode during decomposition of hydrogen peroxide." Nanoscale Advances 2, no. 10 (2020): 4410–16. http://dx.doi.org/10.1039/d0na00602e.
Full textWang, Qian, Yangfan Shao, and Xingqiang Shi. "Mechanism of charge redistribution at the metal–semiconductor and semiconductor–semiconductor interfaces of metal–bilayer MoS2 junctions." Journal of Chemical Physics 152, no. 24 (2020): 244701. http://dx.doi.org/10.1063/5.0010849.
Full textZazpe, R., P. Stoliar, F. Golmar, R. Llopis, F. Casanova, and L. E. Hueso. "Resistive switching in rectifying interfaces of metal-semiconductor-metal structures." Applied Physics Letters 103, no. 7 (2013): 073114. http://dx.doi.org/10.1063/1.4818730.
Full textSalvan, F., A. Humbert, P. Dumas, and F. Thibaudau. "Scanning tunneling microscopy (S.T.M.) of semiconductor surfaces and metal-semiconductor interfaces." Annales de Physique 13, no. 3 (1988): 133–51. http://dx.doi.org/10.1051/anphys:01988001303013300.
Full textIrokawa, Yoshihiro. "Characterization of the Metal-Semiconductor Interface of Pt-GaN Diode Hydrogen Sensors." Materials Science Forum 740-742 (January 2013): 473–76. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.473.
Full textSaleh, Abdulnasser S. "Metal-Semiconductor Interfaces Investigated by Positron Annihilation Spectroscopy." World Journal of Condensed Matter Physics 06, no. 02 (2016): 68–74. http://dx.doi.org/10.4236/wjcmp.2016.62010.
Full textAkimoto, Koichi. "Metal/Semiconductor Interfaces Studied by X-Ray Diffraction." Materia Japan 34, no. 7 (1995): 862–66. http://dx.doi.org/10.2320/materia.34.862.
Full textButera, R. A., and C. A. Hollingsworth. "Mechanism for reactive chemistry at metal-semiconductor interfaces." Physical Review B 37, no. 18 (1988): 10487–95. http://dx.doi.org/10.1103/physrevb.37.10487.
Full textMiyano, K. E., David M. King, C. J. Spindt, et al. "Potential-barrier measurements at clustered metal-semiconductor interfaces." Physical Review B 43, no. 14 (1991): 11806–14. http://dx.doi.org/10.1103/physrevb.43.11806.
Full textThangadurai, P., Yulia Lumelsky, Michael S. Silverstein, and Wayne D. Kaplan. "TEM specimen preparation of semiconductor–PMMA–metal interfaces." Materials Characterization 59, no. 11 (2008): 1623–29. http://dx.doi.org/10.1016/j.matchar.2008.02.007.
Full textBanerjee, T., E. Haq, M. H. Siekman, J. C. Lodder, and R. Jansen. "Ballistic hole emission microscopy on metal-semiconductor interfaces." IEEE Transactions on Magnetics 41, no. 10 (2005): 2642–44. http://dx.doi.org/10.1109/tmag.2005.854738.
Full textHill, I. G., A. Rajagopal, A. Kahn, and Y. Hu. "Molecular level alignment at organic semiconductor-metal interfaces." Applied Physics Letters 73, no. 5 (1998): 662–64. http://dx.doi.org/10.1063/1.121940.
Full textSin, Wai‐Cheong D., N. M. Salansky, and I. I. Glass. "Effects of shock waves on metal‐semiconductor interfaces." Journal of Applied Physics 65, no. 6 (1989): 2289–92. http://dx.doi.org/10.1063/1.342842.
Full textSmit, G. D. J., S. Rogge, and T. M. Klapwijk. "Enhanced tunneling across nanometer-scale metal–semiconductor interfaces." Applied Physics Letters 80, no. 14 (2002): 2568–70. http://dx.doi.org/10.1063/1.1467980.
Full textTung, R. T. "Electron transport at metal-semiconductor interfaces: General theory." Physical Review B 45, no. 23 (1992): 13509–23. http://dx.doi.org/10.1103/physrevb.45.13509.
Full textJIMBO, A., T. HASHIZUME, T. SAKATA, and T. SAKURAI. "AN ATOM-PROBE STUDY OF SEMICONDUCTOR-METAL INTERFACES." Le Journal de Physique Colloques 47, no. C2 (1986): C2–321—C2–327. http://dx.doi.org/10.1051/jphyscol:1986249.
Full textLindau, I., T. Kendelewicz, N. Newman, R. S. List, M. D. Williams, and W. E. Spicer. "Electronic properties of metal/III–V semiconductor interfaces." Surface Science 162, no. 1-3 (1985): 591–604. http://dx.doi.org/10.1016/0039-6028(85)90953-7.
Full textLindau, I., T. Kendelewicz, N. Newman, R. S. List, M. D. Williams, and W. E. Spicer. "Electronic properties of metal/III–V semiconductor interfaces." Surface Science Letters 162, no. 1-3 (1985): A605—A606. http://dx.doi.org/10.1016/0167-2584(85)90310-x.
Full textBrillson, L. J. "Advances in characterizing and controlling metal-semiconductor interfaces." Applications of Surface Science 22-23 (May 1985): 948–68. http://dx.doi.org/10.1016/0378-5963(85)90228-4.
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