Relevant bibliographies by topics / Metal-semiconductor-metal (MSM) photodetectors

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Conference papers
  5. Reports

Academic literature on the topic 'Metal-semiconductor-metal (MSM) photodetectors'

Author: Grafiati
Published: 4 June 2021
Last updated: 5 February 2022

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Journal articles on the topic "Metal-semiconductor-metal (MSM) photodetectors"

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Landheer, D., Z. M. Li, S. P. McAlister, and D. A. Aruliah. "Modeling of ultrafast metal–semiconductor–metal photodetectors." Canadian Journal of Physics 69, no. 3-4 (1991): 520–26. http://dx.doi.org/10.1139/p91-085.

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We have simulated the transient response of metal–semiconductor–metal (MSM) photodetectors to an optical impulse, using a two-dimensional (2-D) drift-diffusion model that incorporates deep traps and appropriate boundary conditions. We incorporate the external circuit using a method originally developed to describe photoconductors in transmission lines. Initially a one-dimensional (1-D) simulation is used to verify our model comparing our results to previous 1-D calculations and experimental results for GaAs MSM detectors. Then a full 2-D analysis is used to predict the performance of a novel MSM wave-guide photodetector whose structure incorporates a Si–Si0.5Ge0.5 strained-layer superlattice. We show that this device can have a response as fast as 50 ps, although pulse pile-up due to slow diffusion of carriers may be a problem at high duty cycles.
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Das, Narottam, Ayman Karar, Chee Leong Tan, Mikhail Vasiliev, Kamal Alameh, and Yong Tak Lee. "Metal-semiconductor-metal (MSM) photodetectors with plasmonic nanogratings*." Pure and Applied Chemistry 83, no. 11 (2011): 2107–13. http://dx.doi.org/10.1351/pac-con-11-01-13.

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We discuss the light absorption enhancement factor dependence on the design of nanogratings inscribed into metal-semiconductor-metal photodetector (MSM-PD) structures. These devices are optimized geometrically, leading to light absorption improvement through plasmon-assisted effects. Finite-difference time-domain (FDTD) simulation results show ~50 times light absorption enhancement for 850 nm light due to improved optical signal propagation through the nanogratings. Also, we show that the light absorption enhancement is strongly dependent on the nanograting shapes in MSM-PDs.
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An, Shu, Shaoteng Wu, Chuan Seng Tan, Guo-En Chang, Xiao Gong, and Munho Kim. "Modulation of light absorption in flexible GeSn metal–semiconductor–metal photodetectors by mechanical bending." Journal of Materials Chemistry C 8, no. 39 (2020): 13557–62. http://dx.doi.org/10.1039/d0tc03016c.

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Jiang Dayong, 蒋大勇, 徐锋 Xu Feng, 曹雪 Cao Xue, 孙云刚 Sun Yungang, 陈濛 Chen Meng, and 刘芯宇 Liu Xinyu. "Metal-Semiconductor-Metal Structured Mg0.2Zn0.8O Visible Blind Photodetectors." Acta Optica Sinica 31, no. 10 (2011): 1004002. http://dx.doi.org/10.3788/aos201131.1004002.

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Hwang, Jundar, and Junshou Lin. "Band-modulation of MgZnO/ZnO Metal-semiconductor-metal Photodetectors." ITM Web of Conferences 17 (2018): 02006. http://dx.doi.org/10.1051/itmconf/20181702006.

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Magnesium (Mg) diffusion behavior on the band modulation of MgxZn1-xO/ZnO metal-semiconductor-metal photodetectors (MSM-PDs) was studied. As the annealing temperature increases, Mg atoms diffuse from MgxZn1-xO into the underlying ZnO layer, which modulates the detection band of the fabricated MSM-PDs from two distinct bands into one band. For the annealing temperature lower than 900 ºC, two detection bands were achieved located in the wavelength region of 280–320 nm and 360–400 nm, attributed to the absorption of the MgxZn1-xO and the ZnO layer, respectively. When the annealing temperature is raised to 900 ºC, the MgxZn1-xO/ZnO bi- layer becomes homogenized into a single MgxZn1-xO layer, leading to only one detection band with a wavelength region of 280–340 nm. In the photoluminescence measurement, the as-deposited MgxZn1-xO/ZnO bi-layer demonstrates two distinct emission peaks located at about 340 and 400 nm for the absorption of the MgxZn1-xO and ZnO layers, whereas only one emission peak of 355 nm was observed in the 900 ºC-annealed MgxZn1-xO/ZnO bi-layer.
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Ghazai, Alaa, and Marwaa Mohammed. "(Au, Ag)/Al0.08In0.08Ga0.84N/ (Au, Ag) Metal-semiconductor-metal (MSM) Photodetectors." Iraqi Journal of Nanotechnology, no. 1 (January 23, 2021): 72–79. http://dx.doi.org/10.47758/ijn.vi1.36.

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Metal-semiconductor-metal (MSM) photodetectors (PDs) based on gold and silver (Au, Ag)/Al0.08In0.08Ga0.84N (commercial sample)/ (Au, Ag) have been fabricated and characterized. The effect of annealing temperature of As deposit, 400, 500, and 600 0C for 30 min on the topography and electrical properties of Au contact on Al0.08In0.08Ga0.84N thin film have been characterized and optimized using Current-Voltage (I-V) characteristic. Schottky barrier height (SBH) and ideality factor (n) of Au/ Al0.08In0.08Ga0.84N interface were 1.223 eV and 1.773 at 50 0C annealing temperature for 30 min respectively, and it is found that contact has a high-quality surface. Also, with the same procedure, the effect of annealing time of 15, 30, 45 minutes, and 1 hour have been studied and optimized. The results revealed that the best annealing time is 30 min which has the highest SBH. Au contact compared with Ag contact used to first time as best our knowledge with the optimal condition to select the best metal for MSM photodetectors (PDs). The ideal characterization of Au, Ag/AlInGaN/Au, Ag MSMPDs on Si substrate depend on responsivities of 0.201 and 0.153 A W-1, quantum efficiencies of 71% and 57%, and NEPs of 3.55×10-4 and 1.45×10-3W-1, respectively have been also studied compared. The height SBH and QE for the samples grown on Si was at Au contact which proposed to use in such optoelectronic devices.
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Koscielniak, W. C., J. L. Pelouard, R. M. Kolbas, and M. A. Littlejohn. "Dark current characteristics of GaAs metal-semiconductor-metal (MSM) photodetectors." IEEE Transactions on Electron Devices 37, no. 7 (1990): 1623–29. http://dx.doi.org/10.1109/16.55748.

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Ghosh, Soumava, Kuan-Chih Lin, Cheng-Hsun Tsai, et al. "Metal-Semiconductor-Metal GeSn Photodetectors on Silicon for Short-Wave Infrared Applications." Micromachines 11, no. 9 (2020): 795. http://dx.doi.org/10.3390/mi11090795.

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Metal-semiconductor-metal photodetectors (MSM PDs) are effective for monolithic integration with other optical components of the photonic circuits because of the planar fabrication technique. In this article, we present the design, growth, and characterization of GeSn MSM PDs that are suitable for photonic integrated circuits. The introduction of 4% Sn in the GeSn active region also reduces the direct bandgap and shows a redshift in the optical responsivity spectra, which can extend up to 1800 nm wavelength, which means it can cover the entire telecommunication bands. The spectral responsivity increases with an increase in bias voltage caused by the high electric field, which enhances the carrier generation rate and the carrier collection efficiency. Therefore, the GeSn MSM PDs can be a suitable device for a wide range of short-wave infrared (SWIR) applications.
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Pandit, Bhishma, and Jaehee Cho. "AlGaN Ultraviolet Metal–Semiconductor–Metal Photodetectors with Reduced Graphene Oxide Contacts." Applied Sciences 8, no. 11 (2018): 2098. http://dx.doi.org/10.3390/app8112098.

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AlGaN semiconductors are promising materials in the field of ultraviolet (UV) detection. We fabricated AlGaN/GaN UV metal–semiconductor–metal (MSM) photodiodes with two back-to-back interdigitated finger electrodes comprising reduced graphene oxide (rGO). The rGO showed high transparency below the wavelength of 380 nm, which is necessary for a visible-blind photodetector, and showed outstanding Schottky behavior on AlGaN. As the photocurrent, dark current, photoresponsivity, detectivity, and cut-off wavelength were investigated with the rGO/AlGaN MSM photodiodes with various Al mole fractions, systematic variations in the device characteristics with the Al mole fraction were confirmed, proving the potential utility of the device architecture combining two-dimensional materials, rGO, and nitride semiconductors.
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Tsay, Chien-Yie, Shih-Ting Chen, and Man-Ting Fan. "Solution-Processed Mg-Substituted ZnO Thin Films for Metal-Semiconductor-Metal Visible-Blind Photodetectors." Coatings 9, no. 4 (2019): 277. http://dx.doi.org/10.3390/coatings9040277.

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The effects of Mg on the microstructural, optical, and electrical properties of sol-gel derived ZnO transparent semiconductor thin films and the photoelectrical properties of photodetectors based on MgxZn1−xO (where x = 0 to 0.3) thin films with the metal-semiconductor-metal (MSM) configuration were investigated in this study. All the as-synthesized ZnO-based thin films had a single-phase wurtzite structure and showed high average transmittance of 91% in the visible wavelength region. The optical bandgap of MgxZn1−xO thin films increased from 3.25 to 3.56 eV and the electrical resistivity of the films rose from 6.1 × 102 to 1.4 × 104 Ω·cm with an increase in Mg content from x = 0 to x = 0.3. Compared with those of the pure ZnO thin film, the PL emission peaks of the MgZnO thin films showed an apparent blue-shift feature in the UV and visible regions. The photo-detection capability was investigated under visible, UVA, and UVC light illumination. Linear I-V characteristics were obtained in these ZnO-based photodetectors under dark and light illumination conditions, indicating an ohmic contact between the Au electrodes and ZnO-based thin films. It was found that the pure ZnO photodetector exhibited the best photoconductivity gain, percentage of sensitivity, and responsivity under UVA illumination. Under UVC illumination, the photoconductivity gain and percentage of sensitivity of the MgZnO photodetectors were better than those of the pure ZnO photodetector.
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Dissertations / Theses on the topic "Metal-semiconductor-metal (MSM) photodetectors"

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Moolji, Akbar. "Performance tradeoffs in scaling InAlAs/InGaAs/InP metal-semiconductor-metal (MSM) photodetectors." Thesis, Massachusetts Institute of Technology, 1995. http://hdl.handle.net/1721.1/36975.

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Meyer, Jason T., and Mahmoud Fallahi. "Ultra-compact integrated silicon photonics balanced coherent photodetector." SPIE-INT SOC OPTICAL ENGINEERING, 2016. http://hdl.handle.net/10150/621797.

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In this paper, the performance simulations of a novel ultra-compact balanced coherent photodetector for operation at a wavelength of 1.5 mu m are presented and design proposals for future fabrication processes are provided. It consists of a compact 2x2 MMI that is evanescently coupled into a germanium MSM photodetection layer. The simulations demonstrate dark current less than 10 nA, capacitance less than 20 fF, and optical bandwidth in the 10-30 GHz range. We propose utilizing the simplicity of direct wafer bonding to bond the detection layer to the output waveguides to avoid complicated epitaxial growth issues. This ultra-compact device shows promise as a high-speed, low-cost integrated silicon photonics solution for the telecommunications infrastructure.
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Huang, Sa. "GaN-Based and High-Speed Metal-Semiconductor-Metal Photodetector: Growth and Device Structures for Integration." Diss., Available online, Georgia Institute of Technology, 2003:, 2003. http://etd.gatech.edu/theses/available/etd-11242003-173234/unrestricted/huang%5Fsa%5F200312%5Fphd.pdf.

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Thesis (Ph. D.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2004.<br>Ferguson, Ian T., Committee Member ; Rhodes, William T., Committee Member ; Wang, Zhonglin, Committee Member ; Brown, April S., Committee Chair ; Jokerst, Nan M., Committee Co-Chair ; Doolittle, W. Alan, Committee Member. Vita. Includes bibliographical references.
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Wang, Jyh-Yen, and 王志延. "Characteristics of Porous Silicon Metal-Semiconductor-Metal Photodetectors (MSM-PDs)." Thesis, 1999. http://ndltd.ncl.edu.tw/handle/68036530869609290787.

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Laih, Li-Hong, and 賴利弘. "IMPROVING THE OPTOELECTRONIC CHARACTERISTICS OF AMORPHOUS METAL- SEMICONDUCTOR-METAL PHOTODETECTORS (MSM-PDs)." Thesis, 1995. http://ndltd.ncl.edu.tw/handle/80008220095179159970.

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碩士<br>國立中央大學<br>電機工程研究所<br>83<br>In this thesis, six types of planar metal-semiconductor- metal photodetectors (MSM-PDs) made of hydrogenated amorphous silicon (a-Si:H) and its alloys on silicon wafer and Corning 7059 glass substrate were studied. To improve the responsivity of device,the transparent ITO(Indium-Tin-Oxide) metal was sputtered onto the i-a-Si:H layer. Experimentally, an increase of 2~3 times of the device responsivity was observed. The top-electrode device fabricated on silicon wafer had the better DC I-V characteristics and its spectral response was within 500 ~ 950 nm, which was more broader than that of the one with bottom-electrodes , and covered the 830 nm wavelength used in the short-range fiber communication system . Since the a-Si:H has a lot of defects and its life- time is shorter, so the falling (turn-off) time of the device during switching was reduced, and a high response speed was expected. Experimentally, a bandwidth speed of 10 ~ 15 GHz was obtainable.
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Lee, Ke-Wei, and 李格瑋. "Investigation and Fabrication of AlGaN/GaN Heterojunction Metal-Semiconductor-Metal (MSM) Photodetectors." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/51570307084247432410.

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碩士<br>國立成功大學<br>微電子工程研究所碩博士班<br>93<br>In this dissertation, the structure of GaN–based Schottky diodes and MSM photodetectors were epitaxied on Al2O3 (sapphire) substrates by metalorganic chemical vapor deposition system (MOCVD). Due to the Schottky contact characteristics of the diodes were directly related to performances of the MSM photodetectors, the Schottky diodes were fabricated formerly. We needed to take account of some Schottky parameters including the Schottky barrier height ΦB and the ideality factor n to ensure that devices have better Schottky contact. We also fabricated the AlGaN/GaN MSM photodetectors and measured the performances of MSM photodetectors. 　　First, the high mobility and sheet concentration in room temperature were obtained by Hall measurement. This is well known that the existence of AlGaN/GaN heterojunction with spontaneous and piezoelectric polarization resulting in high sheet carrier densities and high room temperature mobility. Such phenomenon was so-called two-dimensional electron gas (2DEG) and could be proved by capacitance-voltage measurement. 　　From the unexpected measuremental results of the MSM photodetectors, the interface state was the most important part we could consider. In order to prove the existence of interface state density, a capacitance-voltage (C-V) method with illumination was referred to demonstrate.
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Chen, Yin-Ann, and 陳盈安. "Design and Fabrication of i-a-Si:H and i-a-SiGe:H Metal- Semiconductor-Metal Photodetectors (MSM-PDs)." Thesis, 1994. http://ndltd.ncl.edu.tw/handle/26410409324392043405.

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Ghanbarzadeh, Sina. "High Performance, Low Cost Lateral Metal-Semiconductor-Metal Photodetector for Large Area Indirect X-Ray Imaging." Thesis, 2013. http://hdl.handle.net/10012/8023.

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The most promising technology for radiography is active matrix flat panel imaging systems (AMFPI). However, AMFPI systems are relatively expensive in comparison with conventional computed radiography (CR) systems. Therefore for general radiography applications low cost systems are needed, especially in hospitals and healthcare systems of the developing countries. The focus of this research is the fabrication and characterization of a low cost amorphous silicon metal-semiconductor-metal photodetector as a photosensitive element in a AMFPI systems. Metal-Semiconductor-Metal photodetectors (MSM-PD) are attractive as sensors due to their ease of fabrication and compatibility with thin film transistor fabrication process primarily because there is no p+ doped layer in comparison with conventional p-i-n photodiodes. We have reported low dark current lateral a-Si MSM-PD (lower than 20pA/mm2 ) with responsivity of 280mA/W and EQE of 65 percent to green light ( l = 525nm). These improvement are achieved by introduction of a PI blocking layer and operating the device at high electric field (15 V/µm). This new structure eliminates the need of p+ and n+ layers which makes this structure fully compatible with the a-Si:H TFT fabrication process and consequently a low cost flat panel imager. Further, in this study we have investigated the effect of the spacing and width of the comb structure in the proposed lateral a-Si MSM-PD to determine the best configuration. Moreover, a-Si MSM-PD with PI blocking layer shows a linear behaviour to the photon flux in the wide range of 200nW/cm2 - 300µW/cm2 intensity of the incoming light. In comparison to vertical p-i-n structures, the reported MSM lateral device shows gains in terms of dynamic range, ease of fabrication (no p+ layer) without any deterioration in EQE and responsivity. This results are promising and encourage the development of a-Si lateral MSM-PD for indirect conversion large area medical imaging applications and especially low cost flat.
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"Interdigitated metal-semiconductor-metal (MSM) photodetector on III-V compound semiconductor materials." Chinese University of Hong Kong, 1995. http://library.cuhk.edu.hk/record=b5888464.

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by Hiu-suen Choy.<br>Thesis (M.Phil.)--Chinese University of Hong Kong, 1995.<br>Includes bibliographical references (leaves [124]-131).<br>Acknowledgements<br>Abstract<br>Chapter Chapter 1 --- Introduction --- p.1-1<br>Chapter Chapter 2 --- Basic Theory for MSM Photodetectors --- p.2-1<br>Chapter 2.1 --- Schottky-Mott Theory for Ideal metal-Semiconductor Contact --- p.2-1<br>Chapter 2.2 --- Modifications to Schottky-Mott Theory for Practical Metal Semiconductor Contact --- p.2-4<br>Chapter 2.3 --- Energy Band of Metal-semiconductor-metal (MSM) Structures --- p.2-6<br>Chapter 2.4 --- Dark Current Voltage Characteristics for MSM Structure --- p.2-12<br>Chapter 2.5 --- Capacitance for Interdigitated MSM Photodetectors --- p.2-16<br>Chapter 2.6 --- Basic mechanism of the MSM Photodetector --- p.2-19<br>Chapter 2.7 --- DC Responsity and Quantum Efficiency of the Interdigitated MSM Photodetector --- p.2-20<br>Chapter 2.8 --- Speed Performance of the Interdigitated MSM Photodetector --- p.2-21<br>Chapter Chapter 3 --- Device Fabrication and Packaging --- p.3-1<br>Chapter 3.1 --- Metallization Pattern --- p.3-1<br>Chapter 3.2 --- Device Fabrication --- p.3-7<br>Chapter 3.3 --- Device Packaging --- p.3-8<br>Chapter Chapter 4 --- Experimental Description --- p.4-1<br>Chapter 4.1 --- Experimental Procedures --- p.4-1<br>Chapter 4.2 --- Equipment Description --- p.4-3<br>Chapter Chapter 5 --- 1.3μm In0.53Ga0.47As Metal-Semiconductor-Metal Photodetector Grown by Low-Pressure MOCVD Using Tertiarybutylarsine --- p.5-1<br>Chapter 5.1 --- General Description --- p.5-1<br>Chapter 5.2 --- Structure of the Photodetector --- p.5-2<br>Chapter 5.3 --- Experimental Results --- p.5-6<br>Chapter 5.4 --- Data Analysis and Discussion --- p.5-14<br>Chapter 5.5 --- Summary --- p.5-24<br>Chapter Chapter 6 --- The Performance of 0.85μm Semi-Insulated GaAs MSM Photodetector with Different Interdigitated Spacings --- p.6-1<br>Chapter 6.1 --- General Description --- p.6-1<br>Chapter 6.2 --- Experimental Results --- p.6-2<br>Chapter 6.3 --- Data Analysis and Discussion --- p.6-17<br>Chapter 6.4 --- Summary --- p.6-27<br>Chapter Chapter 7 --- Optical Control of Polarity in Short Electrical Pulses Generated from Coplanar Waveguide MSM Photodetectors --- p.7-1<br>Chapter 7.1 --- General Description --- p.7-1<br>Chapter 7.2 --- "Structure, Fabrication and Experimental Set-up" --- p.7-1<br>Chapter 7.3 --- Experimental Results --- p.7-4<br>Chapter 7.4 --- Data Analysis and Discussion --- p.7-11<br>Chapter 7.5 --- Applications --- p.7-18<br>Chapter Chapter 8 --- Conclusion --- p.8-1<br>References<br>Publications
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Shih, Ming-Chang, and 石明昌. "Fabrication and Study of the ZnSe-based Metal-Semiconductor-Metal (MSM) Photodetector." Thesis, 2002. http://ndltd.ncl.edu.tw/handle/25659920523305910109.

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碩士<br>國立成功大學<br>微電子工程研究所碩博士班<br>90<br>In this thesis, the II-VI ZnSe-based compound semiconductors were all grown on semi-insulated (SI) GaAs substrates by molecular beam epitaxy (MBE) method. The crystal quality of the sample was investigated by used of photoluminescence (PL) and X-ray diffraction analyzer. These fabricated ZnSe-based metal-semiconductor-metal (MSM) photodetectors were compared with different parameters, including composition ratio, finger width/spacing, and thickness of absorption layer. We found that a lot of defects and dislocations produced at ZnSe/GaAs interface (0.27% lattice mismatch) were resulted in degradation of responsivity of the ZnSe MSM photodetector. Although ZnSSe epilayer with smaller lattice mismatch was also grown on GaAs substrates, the responsivity of fabricated ZnSSe MSM photodetector was not improved. Therefore, high-quality quaternary ZnSTeSe epitaxial layers were grown on GaAs substrate successfully, and the responsivity of the ZnSTeSe MSM photodetector was about 0.4 A/W under 3 V reverse bias without any antireflection coating.
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Books on the topic "Metal-semiconductor-metal (MSM) photodetectors"

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United States. National Aeronautics and Space Administration., ed. New concentric electrode metal-semiconductor-metal photodetectors: A final report, NASA grant no. NCC-1-197, August 1, 1994 - October 31, 1996. Dept. of Electrical Engineering, University of Virginia, School of Engineering and Applied Science, 1996.

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Bart, Van Zeghbroeck, Vanderbilt Vern C, and United States. National Aeronautics and Space Administration., eds. Optical design of plant canopy measurement system and fabrication of two-dimensional high-speed metal-semiconductor-metal photodetector arrays: Final report, NASA JRI contract #NCC2-5067. National Aeronautics and Space Administration, 1996.

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Conference papers on the topic "Metal-semiconductor-metal (MSM) photodetectors"

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Chiamori, Heather C., Ruth Miller, Ateeq Suria, Nicholas Broad, and Debbie G. Senesky. "Irradiation effects of graphene-enhanced gallium nitride (GaN) metal-semiconductor-metal (MSM) ultraviolet photodetectors." In SPIE Sensing Technology + Applications, edited by Debbie G. Senesky and Sachin Dekate. SPIE, 2015. http://dx.doi.org/10.1117/12.2178091.

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Behnam, Ashkan, Jason L. Johnson, Yongho Choi, et al. "Metal-semiconductor-metal (MSM) photodetectors based on single-walled carbon nanotube film-silicon Schottky contacts." In MOEMS-MEMS 2008 Micro and Nanofabrication, edited by Srinivas A. Tadigadapa, Babak A. Parviz, and Albert K. Henning. SPIE, 2008. http://dx.doi.org/10.1117/12.761935.

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Dmitruk, Nikolas L., Olga Y. Borkovskaya, Olga I. Mayeva, Sergey V. Mamikin, and Oxana B. Yastrubchak. "MSM-photodetectors with corrugated metal-semiconductor-interface based on III-V semiconductors." In Photonics West '97, edited by Gail J. Brown and Manijeh Razeghi. SPIE, 1997. http://dx.doi.org/10.1117/12.271172.

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Chuang, Ricky W., Zhen-Liang Liao, Huai-Tzu Chiang, and Noritaka Usami. "Functional Enhancement of Metal-Semiconductor-Metal (MSM) Infrared Photodetectors on Heteroepitaxial SiGe-on-Si Using the Anodic Oxidation/Passivation Method." In 2007 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2007. http://dx.doi.org/10.7567/ssdm.2007.e-6-3.

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Beaulieu, Christian, Francois L. Gouin, Julian P. Noad, et al. "Design, fabrication, and modeling of high-speed metal-semiconductor-metal (MSM) photodetectors with indium-tin-oxide (ITO) and Ti/Pt/Au contacts." In Photonics West '95, edited by Manijeh Razeghi, Yoon-Soo Park, and Gerald L. Witt. SPIE, 1995. http://dx.doi.org/10.1117/12.206898.

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Callender, Claire L., Lucie Robitaille, Julian P. Noad, Francois L. Gouin, and Carlos Almeida. "Optimization of metal-semiconductor-metal (MSM) photodetector arrays integrated with polyimide waveguides." In Photonics East '96, edited by Emil S. Koteles and Alan E. Willner. SPIE, 1997. http://dx.doi.org/10.1117/12.265367.

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Chuah, L. S., C. W. Chin, Z. Hassan, and H. Abu Hassan. "Characteristics of Thermally Treated Contacts on Porous Silicon Based Metal-Semiconductor-Metal (MSM) Photodetector Structures." In 2006 IEEE International Conference on Semiconductor Electronics. IEEE, 2006. http://dx.doi.org/10.1109/smelec.2006.381100.

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Mirbaha, S., R. N. Tait, S. P. McGarry, and N. G. Tarr. "A Novel Semiconductor-on-Metal MSM Photodetector Design for Dark Current Reduction." In Integrated Photonics Research, Silicon and Nanophotonics. OSA, 2010. http://dx.doi.org/10.1364/iprsn.2010.jtub15.

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Yusoff, M. Z. Mohd, M. R. Hashim, A. K. Yahya, and Shah Alam. "Improving the Dark Current Response of Monocrystalline N-Si<100>Metal Semiconductor-Metal (MSM) Photodetector by Chemical and Thermal Treatment." In PROGRESS OF PHYSICS RESEARCH IN MALAYSIA: PERFIK2009. AIP, 2010. http://dx.doi.org/10.1063/1.3469621.

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Reports on the topic "Metal-semiconductor-metal (MSM) photodetectors"

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Semendy, Fred, Greg Meissner, and Priyalal Wijewarnasuriya. Sulfur Implanted Black Silicon for Metal Semiconductor Metal (MSM) Photodetectors. Defense Technical Information Center, 2012. http://dx.doi.org/10.21236/ada571896.

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