Relevant bibliographies by topics / Metal thin film

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Metal thin film'

Author: Grafiati
Published: 4 June 2021
Last updated: 7 September 2023

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Journal articles on the topic "Metal thin film"

1

Tellier, C. R. "Thin Metal Film Sensors." Active and Passive Electronic Components 12, no. 1 (1985): 9–32. http://dx.doi.org/10.1155/1985/17659.

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During the last decade some progress have been made in the field of sensors using thin film techniques. In particular thin metal film strain gauges and thin film temperature sensors based on the temperature dependent resistivity of metal are now commonly used. But changes in other transport parameters with various measurands are also useful for the design of metal film sensors. Difficulty arises in thin film techniques when structural defects are frozen in films.Intensive theoretical investigations are carried out to explain the effect of grain-boundary and external surface scatterings on transport parameters. Accordingly the main results are presented to specify the influence of film structure on the sensor performance. The grain-boundary effects are discussed according to applications of metal film sensors. Theoretical predictions are analyzed in terms of sensitivity, thermal stability and long term behavior. But other problems induced by the presence of grain boundaries or point defects are also discussed, in particular problems associated with bulk diffusion, electromigration induced failures or intrinsic stresses.
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Remhof, Arndt, and Andreas Borgschulte. "Thin-Film Metal Hydrides." ChemPhysChem 9, no. 17 (December 1, 2008): 2440–55. http://dx.doi.org/10.1002/cphc.200800573.

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Kraft, O., L. B. Freund, R. Phillips, and E. Arzt. "Dislocation Plasticity in Thin Metal Films." MRS Bulletin 27, no. 1 (January 2002): 30–37. http://dx.doi.org/10.1557/mrs2002.17.

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AbstractThis article describes the current level of understanding of dislocation plasticity in thin films and small structures in which the film or structure dimension plays an important role. Experimental observations of the deformation behavior of thin films, including mechanical testing as well as electron microscopy studies, will be discussed in light of theoretical models and dislocation simulations. In particular, the potential of applying strain-gradient plasticity theory to thin-film deformation is discussed. Although the results of all studies presented follow a “smaller is stronger” trend, a clear functional dependence has not yet been established.
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Lee, Jae-Sung, and Kyeong-Keun Choi. "Metal-Semiconductor-Metal Photodetector Fabricated on Thin Polysilicon Film." Journal of the Korean Institute of Electrical and Electronic Material Engineers 30, no. 5 (May 1, 2017): 276–83. http://dx.doi.org/10.4313/jkem.2017.30.5.276.

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Chakraborty, Jay. "Phase Transformation in Ultra-Thin Films." Advanced Materials Research 996 (August 2014): 860–65. http://dx.doi.org/10.4028/www.scientific.net/amr.996.860.

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Thickness dependent structural phase transformation in thin polycrystalline metal films has been reviewed. Various effects of film thickness reduction on film microstructure have been identified. Film thickness dependent structural phase transformation has been treated thermodynamically taking polycrystalline titanium (Ti) thin film as model example.
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Nair, P. K., O. Gomezdaza, and M. T. S. Nair. "Metal sulphide thin film photography with lead sulphide thin films." Advanced Materials for Optics and Electronics 1, no. 3 (June 1992): 139–45. http://dx.doi.org/10.1002/amo.860010307.

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Gallagher, Dennis, Francis Scanlan, Raymond Houriet, Hans Jörg Mathieu, and Terry A. Ring. "Indium-tin oxide thin films by metal-organic decomposition." Journal of Materials Research 8, no. 12 (December 1993): 3135–44. http://dx.doi.org/10.1557/jmr.1993.3135.

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In2O3–SnO2 films were produced by thermal decomposition of a deposit which was dip coated on borosilicate glass substrates from an acetylacetone solution of indium and tin acetoacetonate. Thermal analysis showed complete pyrolysis of the organics by 400 °C. The thermal decomposition reaction generated acetylacetone gas and was found to be first order with an activation energy of 13.6 Kcal/mole. Differences in thermal decomposition between the film and bulk materials were noted. As measured by differential scanning calorimetry using a 40 °C/min temperature ramp, the glass transition temperature of the deposited oxide film was found to be ∼462 °C, and the film crystallization temperature was found to be ∼518 °C. For film fabrication, thermal decomposition of the films was performed at 500 °C in air for 1 h followed by reduction for various times at 500 °C in a reducing atmosphere. Crystalline films resulted for these conditions. A resistivity of ∼1.01 × 10−3 Ω · cm, at 8 wt. % tin oxide with a transparency of ∼95% at 400 nm, has been achieved for a 273 nm thick film.
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Iwamori, Satoru. "Adhesion and Friction Properties of Fluorocarbon Polymer Thin Films Coated onto Metal Substrates." Key Engineering Materials 384 (June 2008): 311–20. http://dx.doi.org/10.4028/www.scientific.net/kem.384.311.

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Poly(tetrafluoroethylene)(PTFE) thin films were coated onto metal substrates by a spin coat apparatus, vacuum evaporator and RF sputtering, and their adhesion and friction properties evaluated. PTFE thin film coated onto nickel-titanium (Ni-Ti) substrate by spin coating showed a low friction coefficient, however pull strength between the thin film and Ni-Ti substrate was low. In order to increase the pull strength, PTFE and poly(vinyl alcohol) (PVA) composite thin films were introduced between the PTFE thin film and Ni-Ti substrate by spin coating. PTFE thin film was also coated onto SUS302 substrate by a vacuum evaporator. This PTFE thin film showed poor adhesion to the SUS302 substrate. The adhesion was enhanced by heating of the substrate during the evaporation. In addition, a PTFE and ethylene vinyl alcohol (EVOH) composite thin film showed higher adhesion strength than that of the PTFE thin film. Poly(fluorocarbon) thin films were prepared by a conventional RF sputtering with PTFE target. These thin films showed a higher friction coefficient than that of the pristine PTFE. Molecular structures of the poly(fluorocarbon) thin films prepared by RF sputtering were different from the pristine PTFE. This difference may have influenced the friction coefficient. The pull strength of metal thin films such as gold, copper, nickel and aluminum deposited on the sputtered PTFE thin films by vacuum evaporation was measured. The nickel thin film adhered to the PTFE thin film most strongly of all the thin films.
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Liu, Huan, Liang Song, Shun Zhou, and Chang Long Cai. "Thin Metal Films and Multi-Layers Structure as Absorbers for Infrared Detectors." Materials Science Forum 663-665 (November 2010): 352–55. http://dx.doi.org/10.4028/www.scientific.net/msf.663-665.352.

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As thin metal films are known to act as wide-band absorbers for infrared radiation, in this paper Ni metal films are prepared on the Ge surface of double-sided polishing, The results showed the absorbing properties of the metal layer are strongly influenced by the dielectric function of the sensor material. This paper also describes one multi-layers structure as absorber. The structure included a reflector layer of 100-nm-thick Ti (e-beam evaporation), 2-µm-thick polyimide(spin-coating), and 14.9-nm-thick Ni film (e-beam evaporation). These contain a half transmissive thin metal film, a total reflective thin metal film and a quarter-wave polyimide film. The results showed that, measured performance matches well with theoretical predictions.
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Hong, Augustin J., Jiyoung Kim, Kyoungwhan Kim, Yong Wang, Faxian Xiu, Jaeseok Jeon, Jemin Park, et al. "Cr metal thin film memory." Journal of Applied Physics 110, no. 5 (September 2011): 054504. http://dx.doi.org/10.1063/1.3626901.

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Dissertations / Theses on the topic "Metal thin film"

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Han, Sanggil. "Cu2O thin films for p-type metal oxide thin film transistors." Thesis, University of Cambridge, 2018. https://www.repository.cam.ac.uk/handle/1810/285099.

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The rapid progress of n-type metal oxide thin film transistors (TFTs) has motivated research on p-type metal oxide TFTs in order to realise metal oxide-based CMOS circuits which enable low power consumption large-area electronics. Cuprous oxide (Cu2O) has previously been proposed as a suitable active layer for p-type metal oxide TFTs. The two most significant challenges for achieving good quality Cu2O TFTs are to overcome the low field-effect mobility and an unacceptably high off-state current that are a feature of devices that have been reported to date. This dissertation focuses on improving the carrier mobility, and identifying the main origins of the low field-effect mobility and high off-state current in Cu2O TFTs. This work has three major findings. The first major outcome is a demonstration that vacuum annealing can be used to improve the carrier mobility in Cu2O without phase conversion, such as oxidation (CuO) or oxide reduction (Cu). In order to allow an in-depth discussion on the main origins of the very low carrier mobility in as-deposited films and the mobility enhancement by annealing, a quantitative analysis of the relative dominance of the main conduction mechanisms (i.e. trap-limited and grain-boundary-limited conduction) is performed. This shows that the low carrier mobility of as-deposited Cu2O is due to significant grain-boundary-limited conduction. In contrast, after annealing, grain-boundary-limited conduction becomes insignificant due to a considerable reduction in the energy barrier height at grain boundaries, and therefore trap-limited conduction dominates. A further mobility improvement by an increase in annealing temperature is explained by a reduction in the effect of trap-limited conduction resulting from a decrease in tail state density. The second major outcome of this work is the observation that grain orientation ([111] or [100] direction) of sputter-deposited Cu2O can be varied by control of the incident ion-to-Cu flux ratio. Using this technique, a systematic investigation on the effect of grain orientation on carrier mobility in Cu2O thin films is presented, which shows that the [100] Cu2O grain orientation is more favourable for realising a high carrier mobility. In the third and final outcome of this thesis, the temperature dependence of the drain current as a function of gate voltage along with the C-V characteristics reveals that minority carriers (electrons) cause the high off-state current in Cu2O TFTs. In addition, it is observed that an abrupt lowering of the activation energy and pinning of the Fermi energy occur in the off-state, which is attributed to subgap states at 0.38 eV below the conduction band minimum. These findings provide readers with the understanding of the main origins of the low carrier mobility and high off-state current in Cu2O TFTs, and the future research direction for resolving these problems.
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Zella, Leo W. "Metal Ion Diusion in Thin Film Chalcogenides." Ohio University / OhioLINK, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1467075804.

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Ren, Huilin. "Current Voltage Characteristics of a Semiconductor Metal Oxide Sensor." Fogler Library, University of Maine, 2001. http://www.library.umaine.edu/theses/pdf/RenH2001.pdf.

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Pecunia, Vincenzo. "Solution-based polymeric/metal-oxide thin-film transistors and complementary circuits." Thesis, University of Cambridge, 2014. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.708401.

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Barnes, Jean-Paul L. P. Barnes. "TEM studies of thin film oxide/metal nanocomposites." Thesis, University of Oxford, 2003. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.398136.

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Whyte, Alex. "Thin film studies of planar transition metal complexes." Thesis, University of Edinburgh, 2013. http://hdl.handle.net/1842/7966.

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At present the field of molecular electronics - also known as molecular semiconductors, organic semiconductors, plastic electronics or organic electronics - is dominated by organic materials, both polymeric and molecular, with much less attention being focused on transition metal based complexes despite the advantages they can offer. Such advantages include tuneable frontier orbitals through the ligand/metal interaction and the ability to generate stable paramagnetic species. Devices containing radical materials are particularly interesting in order to examine the interplay between conduction and spin - an effect which is not yet properly understood but can give rise to exotic behaviour. A series of homoleptic, bis-ligand Ni(II) and Cu(II) complexes were prepared using three structurally related phenolic oxime ligands, 2-hydroxy-5-t-octylacetophenone oxime (t-OctsaoH), 2-hydroxy-5-n-propylacetophenone oxime (n-PrsaoH) and 2- hydroxyacetophenone oxime (HsaoH). The complexes were characterised by single-crystal X-ray diffraction, cyclic voltammetry, UV/Vis spectroscopy, field-effect-transistor measurements, DFT/TD-DFT calculations and in the case of the paramagnetic species, EPR and magnetic susceptibility. Variation of the substituent on the ligand from t-octyl to n-propyl to H enabled electronic isolation of the complexes in the crystal structures of M(t-OctsaoH)2, which contrasted with π-stacking interactions observed in the crystal packing of M(n-PrsaoH)2 and of M(HsaoH) (M = Ni, Cu). This was further evidenced by comparing the antiferromagnetic interactions observed in samples of Cu(n-PrsaoH)2 and Cu(HsaoH)2 with the ideal paramagnetic behaviour for Cu(t-OctsaoH)2 down to 1.8 K. Despite isostructural single crystal structures for M(n-PrsaoH)2, thin-film X-ray diffraction and SEM revealed different morphologies depending on the metal and the deposition method employed. However, the complexes of M(n-PrsaoH)2 and M(HsaoH) failed to demonstrate significant charge transport in an FET device despite displaying the ability to form π- stacking structures. A series of planar Ni(II), Cu(II) and Co(II) dibenzotetraaza[14]annulenes (dbtaa) and dinapthotetraaza[14]annulenes (dntaa) were synthesised and studied crystallographically, optically, electrochemically and magnetically. Thin films of each of these complexes have been prepared by vacuum deposition to evaluate the field-effect transistor (FET) performance as well as the morphology and crystallinity of the film formed. Single crystal data revealed that Ni(dbtaa) and Cu(dbtaa) are isomorphous to each other, with Co(dbtaa) displaying a different crystallographic packing. The electrochemistry and UV/Vis absorption studies indicate the materials are redox active and highly coloured, with molar extinction coefficients as large as 80,000 M-1cm-1 in the visible region. The paramagnetic Cu(II) and Co(II) complexes display weak 1-dimensional antiferromagnetic interactions and were fit to the Bonner-Fisher chain model. The data revealed that the Co(II) species possesses much stronger magnetic exchange interactions compared with the Cu(II) complex. Each of the materials formed polycrystalline films when vacuum deposited and all showed ptype field-effect transistor behaviour, with modest charge carrier mobilities in the range of 10-5 to 10-9 cm2 V-1 s-1 . SEM imaging of the substrates indicates that the central metal ion, and its sublimation temperature, has a crucial role in defining the morphology of the resulting film. Structurally related Cu(II) and Ni(II) dithiadiazoletetraaza[14]annulene (dttaa) macrocycles were synthesised and studied in the context of their thin film electrochemical, conducting and morphological properties. Both the Ni(II) and Cu(II) complexes were found to be volatile under reduced pressure, which allowed crystals of both materials to be grown and the single crystal structures solved. Interestingly, the crystal packing of these heterocyclic macrocycles varies depending on whether the central metal ion is Cu(II) or Ni(II), which is in contrast to the analogous dibenzotetrazaannulenes complexes. Soluble Ni(II) analogues containing benzoyl groups on the meso- positions of the macrocycle (dttaaBzOR) were also prepared and contrasted with the insoluble Ni(dttaa) complexes in terms of their solution optical and electrochemical properties. Thin film electrochemical studies of Cu(dttaa) and Ni(dttaa) showed chemically reversible oxidative processes but on scanning to reductive potentials the films disintegrated almost immediately as the bulky counter tetrabutylammonium cation entered the thin film. FET studies undertaken on polycrystalline films of both complexes, using various device configurations and surface treatments, failed to realise any gate effect. Thin film XRD measurements indicate that films of both complexes formed by vacuum deposition are crystalline and contain a mixture of molecular alignments, with molecules aligning “edge on” and “face down” to the substrate. SEM imaging failed to effectively resolve the morphology of the films implying the sizes of the crystallites are small, which may help to explain the lack of FET effect. A series of bis-ligand diimine Ni, Cu and Pd complexes have been synthesised from the ligand 4,5-bis(dodecyloxy)benzene-1,2-diamine (dbdaH2). The same ligand was also used to prepare a series of soluble Cu(II) and Ni(II) tetraaza[14]annulene macrocycles. All the bis-ligand diimine complexes were found to suffer from instability in air due to the ease at which the complexes are oxidised. The Ni complex, Ni(dbda)2, was found to display a NIR transition in the region of 971 to 1024 nm depending on the polarity of the solvent that the molecule is dissolved in. Solution electrochemistry studies of Ni(dbda)2 reaffirmed the facile nature of the first oxidative process, with the HOMO energy calculated at -4 eV by hybrid-DFT. This compound failed to yield semiconducting behaviour in an FET device despite the use of surface treatments aimed at promoting suitable molecular alignment across the conducting channel.
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Reichmuth, Andreas. "Alkali metal adsorption and ultra-thin film growth." Thesis, University of Cambridge, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.338308.

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Krishnan, Subramanian. "Thin film metal-insulator-metal tunnel junctions for millimeter wave detection." [Tampa, Fla] : University of South Florida, 2008. http://purl.fcla.edu/usf/dc/et/SFE0002759.

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Borovikov, Valery. "Multi-scale simulations of thin-film metal epitaxial growth /." Connect to full text in OhioLINK ETD Center, 2008. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1216928358.

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Rycroft, Ian M. "Electric, magnetic and optical properties of thin films, ultra thin films and multilayers." Thesis, University of Reading, 1996. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.318142.

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Books on the topic "Metal thin film"

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Ramanathan, Shriram, ed. Thin Film Metal-Oxides. Boston, MA: Springer US, 2010. http://dx.doi.org/10.1007/978-1-4419-0664-9.

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United States. National Aeronautics and Space Administration., ed. Metal thin-film optical polarizers for space applications: Phase II, final report. [Washington, DC]: National Aeronautics and Space Administration, 1991.

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Thin film metal-oxides: Fundamentals and applications in electronics and energy. New York: Springer, 2010.

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Laconte, J. Micromachined thin-film sensors for SOI-CMOS co-integration. New York: Springer, 2011.

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Maeda, Shigenobu. Teishōhi denryoku kōsoku MOSFET gijutsu: Takesshō shirikon TFT fukagata SRAM to SOI debaisu. Tōkyō: Sipec, 2002.

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1949-, Sanchez John, Smith David A. 1943-, DeLanerolle Nimal, TMS Electronic Device Materials Committee., and Topical Symposium "Microstructural Science for Thin Film Metallizations in Electronics Applications" (1988 : Phoenix, Ariz.), eds. Microstructural science for thin film metallizations in electronic applications: Proceedings of the topical symposium held at the Annual Meeting of the Minerals, Metals & Materials Society. Warrendale, Pa: TMS, 1988.

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Klaus, Wetzig, and Schneider Claus M, eds. Metal based thin films for electronics. 2nd ed. Weinheim: Wiley-VCH, 2006.

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Klaus, Wetzig, and Schneider Claus M, eds. Metal based thin films for electronics. Weinheim: Wiley-VCH, 2003.

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Hans-Ulrich, Finzel, ed. Electrical resistivity of thin metal films. Berlin: Springer, 2007.

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K, Jones B., ed. Physical properties of thin metal films. London: Taylor & Francis, 2003.

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Book chapters on the topic "Metal thin film"

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Stucky, Galen D., and Michael H. Bartl. "Mesostructured Thin Film Oxides." In Thin Film Metal-Oxides, 255–79. Boston, MA: Springer US, 2009. http://dx.doi.org/10.1007/978-1-4419-0664-9_8.

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Fister, Tim T., and Dillon D. Fong. "In Situ Synchrotron Characterization of Complex Oxide Heterostructures." In Thin Film Metal-Oxides, 1–49. Boston, MA: Springer US, 2009. http://dx.doi.org/10.1007/978-1-4419-0664-9_1.

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Holme, Timothy P., Hong Huang, and Fritz B. Prinz. "Design of Heterogeneous Catalysts and the Application to the Oxygen Reduction Reaction." In Thin Film Metal-Oxides, 303–28. Boston, MA: Springer US, 2009. http://dx.doi.org/10.1007/978-1-4419-0664-9_10.

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Ruzmetov, Dmitry, and Shriram Ramanathan. "Metal-Insulator Transition in Thin Film Vanadium Dioxide." In Thin Film Metal-Oxides, 51–94. Boston, MA: Springer US, 2009. http://dx.doi.org/10.1007/978-1-4419-0664-9_2.

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Lu, Jiwei, Kevin G. West, and Stuart A. Wolf. "Novel Magnetic Oxide Thin Films." In Thin Film Metal-Oxides, 95–129. Boston, MA: Springer US, 2009. http://dx.doi.org/10.1007/978-1-4419-0664-9_3.

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Bruchhaus, Rainer, and Rainer Waser. "Bipolar Resistive Switching in Oxides for Memory Applications." In Thin Film Metal-Oxides, 131–67. Boston, MA: Springer US, 2009. http://dx.doi.org/10.1007/978-1-4419-0664-9_4.

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Hikita, Yasuyuki, and Harold Y. Hwang. "Complex Oxide Schottky Junctions." In Thin Film Metal-Oxides, 169–204. Boston, MA: Springer US, 2009. http://dx.doi.org/10.1007/978-1-4419-0664-9_5.

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Waghmare, Umesh V. "Theory of Ferroelectricity and Size Effects in Thin Films." In Thin Film Metal-Oxides, 205–31. Boston, MA: Springer US, 2009. http://dx.doi.org/10.1007/978-1-4419-0664-9_6.

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Cantoni, C., and A. Goyal. "High-T c Superconducting Thin- and Thick-Film–Based Coated Conductors for Energy Applications." In Thin Film Metal-Oxides, 233–53. Boston, MA: Springer US, 2009. http://dx.doi.org/10.1007/978-1-4419-0664-9_7.

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Quek, Su Ying, and Efthimios Kaxiras. "Applications of Thin Film Oxides in Catalysis." In Thin Film Metal-Oxides, 281–301. Boston, MA: Springer US, 2009. http://dx.doi.org/10.1007/978-1-4419-0664-9_9.

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Conference papers on the topic "Metal thin film"

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Shen, Yu, and Baocheng Yang. "Electric potential distribution of metal-metal junction." In Third International Conference on Thin Film Physics and Applications, edited by Shixun Zhou, Yongling Wang, Yi-Xin Chen, and Shuzheng Mao. SPIE, 1998. http://dx.doi.org/10.1117/12.300725.

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Liu, B. X., T. Yang, and F. Pan. "Abnormal interfacial magnetic behaviors of Fe- and Pd-based metal-metal multilayers." In Thin Film Physics and Applications: Second International Conference, edited by Shixun Zhou, Yongling Wang, Yi-Xin Chen, and Shuzheng Mao. SPIE, 1994. http://dx.doi.org/10.1117/12.190822.

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Vladimirsky, Yuli, N. Rau, Harish M. Manohara, Kevin J. Morris, J. Michael Klopf, Gina M. Calderon, and Olga Vladimirsky. "Thin metal film thermal microsensors." In Micromachining and Microfabrication, edited by Michael T. Postek. SPIE, 1995. http://dx.doi.org/10.1117/12.222647.

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Zhang, Kai xin, Jian da Shao, Guo hang Hu, Maria Luisa Grillid, Angela Piegari, Zhen Cao, Hong bo He, Yuan an Zhao, and Anna Sytchkova. "Subwavelength periodic nanostructures fabricated by femtosecond laser in metal, dielectric and metal-dielectric-metal coating." In Tenth International Conference on Thin Film Physics and Applications (TFPA 2019), edited by Junhao Chu and Jianda Shao. SPIE, 2019. http://dx.doi.org/10.1117/12.2540704.

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Wilke, Ingrid, Dominique B. Moix, W. Herrmann, and Fritz K. Kneubuehl. "Submicron thin-film metal-oxide-metal infrared detectors." In Israel - DL tentative, edited by Moshe Oron and Itzhak Shladov. SPIE, 1991. http://dx.doi.org/10.1117/12.49047.

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Huang, Yongjie, and Ping Jiang. "Structure of very thin metal film." In Shanghai - DL tentative, edited by Shixun Zhou and Yongling Wang. SPIE, 1991. http://dx.doi.org/10.1117/12.47271.

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Filip, Lucian D., Lucian Pintilie, Wing-Shan Tam, and Chi-Wah Kok. "Leakage current for thin film metal-ferroelectric-metal devices." In 2016 5th International Symposium on Next-Generation Electronics (ISNE). IEEE, 2016. http://dx.doi.org/10.1109/isne.2016.7543292.

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Refki, Siham, Y. Elidrissi, N. Andam, shinji hayashi, and Zouheir Sekkat. "Thin film sensing by metal-insulator-metal plasmonic structures." In Biophotonics in Point-of-Care II, edited by Michael T. Canva, Ambra Giannetti, Julien Moreau, and Hatice Altug. SPIE, 2022. http://dx.doi.org/10.1117/12.2622229.

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Chen, Jianming, Jiancheng Zhang, Yue Shen, and Xiuhong Liu. "Synthesis and characteristics of metal-phthalocyanine-polymer composite films." In 4th International Conference on Thin Film Physics and Applications, edited by Junhao Chu, Pulin Liu, and Yong Chang. SPIE, 2000. http://dx.doi.org/10.1117/12.408371.

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Ahmadpour, Mehrad, André L. F. Cauduro F. Cauduro, Mina Mirsafaei, John Lundsgaard Hansen, Brian Julsgaard, Horst-Günter Rubahn, Peter Balling, Nadine Witkowski, Andreas K. Schmid, and Morten Madsen. "Crystalline metal oxide contact layers in organic and hybrid photovoltaics." In 1st Interfaces in Organic and Hybrid Thin-Film Optoelectronics. València: Fundació Scito, 2019. http://dx.doi.org/10.29363/nanoge.inform.2019.039.

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Reports on the topic "Metal thin film"

1

Nicolet, M.-A. Thin-Film Diffusion Barriers for Metal-Semiconductor Contacts,. Fort Belvoir, VA: Defense Technical Information Center, January 1987. http://dx.doi.org/10.21236/ada188712.

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2

Nocera, Daniel. Water Splitting by Thin Film Metal-Oxo Catalysts. Office of Scientific and Technical Information (OSTI), March 2013. http://dx.doi.org/10.2172/1360810.

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3

Greg M. Swain, PI. Metal/Diamond Composite Thin-Film Electrodes: New Carbon Supported Catalytic Electrodes. Office of Scientific and Technical Information (OSTI), March 2009. http://dx.doi.org/10.2172/948861.

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4

Caron, R. P. Pd and Ni thin-film reactions with InP: Possibilities for metal contacts. Office of Scientific and Technical Information (OSTI), April 1989. http://dx.doi.org/10.2172/5775605.

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5

Chiang, Tai C. Electronic Struture and Quantum Effects of Thin Metal Film Systems Based on Silicon Carbide. Fort Belvoir, VA: Defense Technical Information Center, May 2013. http://dx.doi.org/10.21236/ada577620.

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6

Jing, Dapeng. Metal thin film growth on multimetallic surfaces: From quaternary metallic glass to binary crystal. Office of Scientific and Technical Information (OSTI), January 2010. http://dx.doi.org/10.2172/1037881.

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7

Morley, Neil B. Numerical and experimental modeling of liquid metal thin film flows in a quasi-coplanar magentic field. Office of Scientific and Technical Information (OSTI), January 1994. http://dx.doi.org/10.2172/467130.

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8

Lad, Robert J. Structural, electronic and chemical properties of metal/oxide and oxide/oxide interfaces and thin film structures. Office of Scientific and Technical Information (OSTI), December 1999. http://dx.doi.org/10.2172/758832.

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9

Mikus, Ryan E., and Kenneth D. Kihm. High-Temperature Liquid Metal Transport Physics of Capillary Pumping Heat Transport System (CPHTS) Research: Experimental and Theoretical Studies of Evaporating Liquid Metal Thin Film. Fort Belvoir, VA: Defense Technical Information Center, April 2012. http://dx.doi.org/10.21236/ada561315.

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10

Leung, P. T., Young S. Kim, and Thomas P. George. Photoabsorption of Molecules at Corrugated Thin Metal Films. Fort Belvoir, VA: Defense Technical Information Center, February 1989. http://dx.doi.org/10.21236/ada205325.

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