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Dissertations / Theses on the topic 'Metal thin film'

Author: Grafiati

Published: 4 June 2021

Last updated: 7 September 2023

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1

Han, Sanggil. "Cu2O thin films for p-type metal oxide thin film transistors." Thesis, University of Cambridge, 2018. https://www.repository.cam.ac.uk/handle/1810/285099.

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The rapid progress of n-type metal oxide thin film transistors (TFTs) has motivated research on p-type metal oxide TFTs in order to realise metal oxide-based CMOS circuits which enable low power consumption large-area electronics. Cuprous oxide (Cu2O) has previously been proposed as a suitable active layer for p-type metal oxide TFTs. The two most significant challenges for achieving good quality Cu2O TFTs are to overcome the low field-effect mobility and an unacceptably high off-state current that are a feature of devices that have been reported to date. This dissertation focuses on improving

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2

Zella, Leo W. "Metal Ion Diusion in Thin Film Chalcogenides." Ohio University / OhioLINK, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1467075804.

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3

Ren, Huilin. "Current Voltage Characteristics of a Semiconductor Metal Oxide Sensor." Fogler Library, University of Maine, 2001. http://www.library.umaine.edu/theses/pdf/RenH2001.pdf.

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4

Pecunia, Vincenzo. "Solution-based polymeric/metal-oxide thin-film transistors and complementary circuits." Thesis, University of Cambridge, 2014. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.708401.

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5

Barnes, Jean-Paul L. P. Barnes. "TEM studies of thin film oxide/metal nanocomposites." Thesis, University of Oxford, 2003. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.398136.

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6

Whyte, Alex. "Thin film studies of planar transition metal complexes." Thesis, University of Edinburgh, 2013. http://hdl.handle.net/1842/7966.

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At present the field of molecular electronics - also known as molecular semiconductors, organic semiconductors, plastic electronics or organic electronics - is dominated by organic materials, both polymeric and molecular, with much less attention being focused on transition metal based complexes despite the advantages they can offer. Such advantages include tuneable frontier orbitals through the ligand/metal interaction and the ability to generate stable paramagnetic species. Devices containing radical materials are particularly interesting in order to examine the interplay between conduction

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7

Reichmuth, Andreas. "Alkali metal adsorption and ultra-thin film growth." Thesis, University of Cambridge, 1994. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.338308.

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8

Krishnan, Subramanian. "Thin film metal-insulator-metal tunnel junctions for millimeter wave detection." [Tampa, Fla] : University of South Florida, 2008. http://purl.fcla.edu/usf/dc/et/SFE0002759.

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9

Borovikov, Valery. "Multi-scale simulations of thin-film metal epitaxial growth /." Connect to full text in OhioLINK ETD Center, 2008. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1216928358.

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10

Rycroft, Ian M. "Electric, magnetic and optical properties of thin films, ultra thin films and multilayers." Thesis, University of Reading, 1996. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.318142.

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11

Kiani, Ahmed. "Analysis of metal oxide thin film transistors with high-k dielectrics and source/drain contact metals." Thesis, University of Cambridge, 2014. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.648586.

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12

Greenspan, Jonathan. "The fabrication and characterization of metal thin film bolometers." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1998. http://www.collectionscanada.ca/obj/s4/f2/dsk1/tape11/PQDD_0023/MQ50612.pdf.

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13

Wang, Chao-Hsiung. "The growth of thin film epitaxial oxide-metal heterostructures." Thesis, University of Cambridge, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.368667.

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14

Borovikov, Valery V. "Multi-scale Simulations of Thin-Film Metal Epitaxial Growth." University of Toledo / OhioLINK, 2008. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1216928358.

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15

Okazaki, Nobuharu. "Molecular rectification with identical metal electrodes at low temperatures." Thesis, University of Exeter, 2003. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.251190.

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16

Kamada, Rui. "Copper(indium,gallium)selenide film formation from selenization of mixed metal/metal-selenide precursors." Access to citation, abstract and download form provided by ProQuest Information and Learning Company; downloadable PDF file, 226 p, 2009. http://proquest.umi.com/pqdweb?did=1654501631&sid=4&Fmt=2&clientId=8331&RQT=309&VName=PQD.

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17

Barstow, Sean J. "Use of photosensitive metal-organic precursors to deposit metal-oxides for thin-film capacitor applications." Diss., Available online, Georgia Institute of Technology, 2004:, 2003. http://etd.gatech.edu/theses/available/etd-04082004-180015/unrestricted/barstow%5Fsean%5Fj%5F200312%5Fphd.pdf.

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18

Yang, Seung-Yeul. "Complex metal oxide thin film growth by metalorganic chemical vapor deposition." College Park, Md. : University of Maryland, 2005. http://hdl.handle.net/1903/3350.

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Thesis (Ph. D.) -- University of Maryland, College Park, 2005.<br>Thesis research directed by: Material Science and Engineering. Title from t.p. of PDF. Includes bibliographical references. Published by UMI Dissertation Services, Ann Arbor, Mich. Also available in paper.

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19

Deo, N. "Chemical vapour deposition of thin film metal layers for magnetic applications." Thesis, Queen's University Belfast, 2004. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.411101.

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20

Kristofzski, John Gregory. "Ionization-structure relationships of thin film and gas phase group VI metal-metal quadruple-bonded complexes." Diss., The University of Arizona, 1988. http://hdl.handle.net/10150/184384.

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Principles involving the electronic structure of group VI metal-metal multiple bonded complexes are examined in order to provide insights into the intramolecular and intermolecular interactions of these systems. Examination of chromium, molybdenum and tungsten tetracarboxylate thin films by ultraviolet photoelectron spectroscopy has provided the first experimental evidence for the location of the σ ionization in dimolybdenum tetracarboxylate quadruple bonded complexes. These compounds have significant intermolecular interactions as thin films which destabilizes ionization of the valence σ stat

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21

Chow, Chi Mei. "Effects of surface modification on metal-phthalocyanines based organic thin film transistors." HKBU Institutional Repository, 2010. http://repository.hkbu.edu.hk/etd_ra/1152.

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22

Zhang, Bo. "Improvement of metal induced crystallization process and novel post-annealing technologies /." View abstract or full-text, 2008. http://library.ust.hk/cgi/db/thesis.pl?ECED%202008%20ZHANG.

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23

Tamjidi, Mohammad R. "Characteristics of N-channel accumulation mode thin film polysilicon mosfets. /." Full text open access at:, 1987. http://content.ohsu.edu/u?/etd,132.

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24

Al-Dabbagh, J. B. "Some properties of thin metal films in reacting and non-reacting substrates." Thesis, University of Reading, 1989. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.234487.

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25

Volkmann, Christian. "Atomic layer deposition of metal and metal chalcogenide thin films and nanolaminate composites." Doctoral thesis, Niedersächsische Staats- und Universitätsbibliothek Göttingen, 2017. http://hdl.handle.net/11858/00-1735-0000-002E-E3AE-5.

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26

Plassmeyer, Paul. "Metal-Oxide Thin Films Deposited from Aqueous Solutions: The Role of Cation/Water Interactions." Thesis, University of Oregon, 2017. http://hdl.handle.net/1794/22295.

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Metal-oxide thin films are used in a wide variety of electronic devices. Although many techniques have been developed to deposit thin films of metal oxides, there is still a need for alternative cost- and energy-effective deposition methods. Deposition of metal oxide thin films from aqueous solutions of all-inorganic metal salts is a viable method that meets these needs. Although many aqueous-deposited metal-oxide thin films have been successfully incorporated into functioning devices, many of the mechanisms that occur as precursors transition to metal oxides are not well understood. The wo

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27

Innes, R. A. "Surface plasmon-polaritons and thermally-induced optical nonlinearities in liquid crystals." Thesis, University of Exeter, 1987. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.380733.

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28

Attard, G. A. "The structure and reactivity of copper, silver and gold overlayers on W(100)." Thesis, University of Liverpool, 1987. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.382046.

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29

Min, Byoung Koun. "Scanning tunneling microscopic studies of SiO2 thin film supported metal nano-clusters." Diss., Texas A&M University, 2004. http://hdl.handle.net/1969.1/2737.

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This dissertation is focused on understanding heterogeneous metal catalysts supported on oxides using a model catalyst system of SiO2 thin film supported metal nano-clusters. The primary technique applied to this study is scanning tunneling microscopy (STM). The most important constituent of this model catalyst system is the SiO2 thin film, as it must be thin and homogeneous enough to apply electron or ion based surface science techniques as well as STM. Ultra-thin SiO2 films were successfully synthesized on a Mo(112) single crystal. The electronic and geometric structure of the SiO2 thin fil

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30

Zaidi, Syed Zulfiqar Ali. "Electrical and optical properties of some metal/SiOâ†x thin film systems." Thesis, Brunel University, 1996. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.307488.

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31

Lü, Bo. "Dynamics of the Early Stages in Metal-on-Insulator Thin Film Deposition." Licentiate thesis, Linköpings universitet, Plasma och beläggningsfysik, 2014. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-112136.

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Thin films consist of nanoscale layers of material that are used in many technological applications to either functionalize a surface or serve as parts in miniaturized devices. The properties of a film are closely related to its microstructure, which in turn can be tuned during film preparation. Thin film growth involves a multitude of atomic-scale processes that cannot always be easily studied experimentally. Therefore, different types of computer simulations have been developed in order to test theoretical models of thin film growth in a highly controlled way. To be able to compare simulatio

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32

Shen, Yonglong. "Development of thin film photovoltaic cells based on low cost metal oxides." Thesis, University of Bolton, 2014. http://ubir.bolton.ac.uk/803/.

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The major market barriers to the use of photovoltaic solar cells are high cost and long payback time of conventional technologies, based largely on the silicon material. In order to overcome the environmental problem resulting from the consumption of fossil fuels, all western countries are required to impose heavy subsidies to encourage the use of solar cells in the reduction of carbon consumption; thereby making them highly unsustainable. Therefore, it is necessary to develop solar cells based on low-cost metal oxides with large natural resources. The objective of this program is to investiga

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33

Johnston, David A. "The use of metal evaporation in the design and manufacture of enzyme electrodes." Thesis, University of the West of Scotland, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.323763.

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34

Liu, Xuejing. "GPU Enhanced Simulations of Glancing Angle Deposition of Metal Thin-Films." University of Toledo / OhioLINK, 2012. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1325704817.

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35

Chen, De Xiu, and 陳德修. "Fabrication of thin-film metal nanobridge." Thesis, 2003. http://ndltd.ncl.edu.tw/handle/64521610277335987225.

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36

Yang, Kai-Yu, and 楊鎧輿. "Photoelectrochemical studies of metal oxide/metal sulfide heterostructure thin film." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/41951714700818111613.

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博士<br>國立中央大學<br>化學工程與材料工程學系<br>105<br>In this research, we prepared ZnO/Cu-In-Zn-S and CIS/ITO p-n junction heterogeneous structure thin films by using sprayed deposition method. In the first part, we present a sprayed composite thin film, comprising Cu-In-Zn-S (CIZS) particles embedded in ZnO matrix for photoelectrochemical hydrogen production from water splitting. CIZS, a photoactive semiconductor was used as a photon absorber, whereas ZnO channels as the pathway for charge transfer. It was found that the distribution of the CIZS particles had a direct impact on the PEC activity. A more homo

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37

Yeh, Jen-Hao, and 葉仁豪. "Nano-texture Metal Thin Film for Sensors Applications." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/31039226050678273141.

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碩士<br>國立清華大學<br>動力機械工程學系<br>100<br>This study, we present nanoporous anodic aluminum template transformation technique to fabricate novel sensor. Using this technique to design, analysis and fabricate novel pizeoresistance sensors. They are temperature sensor, strain sensor and bending curvature sensor. Now the day, the technology of Micro- Electro- Mechanical System (MEMS) is primary using the semiconductor manufacture technology to manufacture micro system on silicon substrate. These days, with scale is going down to nano scale structure, the facilities of traditional manufacture in nano str

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38

Qiu, Hung-Sheng, and 邱宏昇. "Design and Analysis of Metal Thin Film Ignition Chip." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/31256282417941670783.

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碩士<br>國立臺灣大學<br>應用力學研究所<br>92<br>Micro Electromechanical Technology has made great progress，using the Process-skill to manufacture Electrical-Igniting-Chip to replace an old Exploding-Bridge-Wire，Electrical-Igniting-Chip has the advantage of lower firing energy、shorter ignition time、higher exploding temperature, etc. To switch an air bag of cars，to ignite bombs and rockets，to burn blunt master explosive，to ignite fuel to push ahead and is a kind of more reliable product. When it is an military use，it is set on an ignition device which has the ignition powder Zr in it ,and the Explod

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39

FANG, YI-KAI, and 方毅凱. "Study of Metal Nanograting on Thin-film Solar Cells." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/y72ujb.

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碩士<br>國立高雄師範大學<br>電子工程學系<br>105<br>In this thesis we presented the simulation and analysis of one-dimensional metallic nanograting in association with thin-film amorphous silicon solar cell, and the simulation was processed on SILVACO TCAD program with finite difference time domain (FDTD) method. First, we simulated different depth and period of aluminum nanograting placed between active layer and backside aluminum reflector. We found out when the nanograting depth and period are at 50nm and 600nm respectively, the conversion efficiency increased to 9.03% in compared with the device without na

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40

Qiu, Hong-Sheng, and 邱宏昇. "Design and Analysis of Metal Thin-Film Ignition Chip." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/78752354531946842337.

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碩士<br>國立臺灣大學<br>應用力學研究所<br>92<br>Micro Electromechanical Technology has made great progress，using the Process-skill to manufacture Electrical-Igniting-Chip to replace an old Exploding-Bridge-Wire，Electrical-Igniting-Chip has the advantage of lower firing energy、shorter ignition time、higher exploding temperature, etc. To switch an air bag of cars，to ignite bombs and rockets，to burn blunt master explosive，to ignite fuel to push ahead and is a kind of more reliable product. When it is an military use，it is set on an ignition device which has the ignition powder Zr in it ,and the Exploding Bridge

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41

CAI, ZHENG-HONG, and 蔡政宏. "Analysis and measurement of metal thin-film thermal detector." Thesis, 1993. http://ndltd.ncl.edu.tw/handle/38902861701552940442.

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42

林均翰. "Si thin film anodes modified by metal induced etching." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/32523835425293557361.

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碩士<br>逢甲大學<br>材料科學與工程學系<br>104<br>In this study we investigate the electrochemical properties of a high capacity anode material, silicon (4200m Ah/g). Due the high theatrical capacity of silicon, only a smaller volume of active material is required for application in lithium ion batteries. However, silicon anode has one drawback that the material encounters serious cracking, which is attributed to the large volume expansion during the alloying and de-alloying process of Si toward lithium. During the process, stress accumulates and in several cycles silicon cracks and the broken parts loses ele

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43

LEE, CHENG-HUAN, and 李政圜. "12 Inches Metal Sputtering Equipment Thin Film Quality Improvement." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/968srw.

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碩士<br>中華大學<br>機械工程學系<br>107<br>With the increasing investment in Taiwan and under the guiding of Mr. Morris Chang, the former CEO of Taiwan Semiconductor Manufacturing Company Limited (TSMC), TSMC has a market value of 6.7 trillion US dollars and becomes the world's top 100 companies in 2018. The technical capability of TSMC has reached the international leading level, even Intel Corporation (INTEL), which has long dominated the semiconductor manufacturing process, is looking forward to it. Therefore, semiconductors have developed into a mature industry in Taiwan now. Countries around the worl

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44

Yip, Gordon. "Development of Al2O3 Gate Dielectrics for Organic Thin-film Transistors." Thesis, 2008. http://hdl.handle.net/1807/11174.

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The focus of this thesis is on radio frequency magnetron sputtered aluminum oxide thin films developed for use as the gate dielectric for organic thin film transistors. The effect of top metal electrodes on the electrical characteristics of aluminum oxide metal-insulator-metal capacitors has been studied to determine an optimum material combination for minimizing the leakage current, while maximizing the breakdown field. The leakage current and breakdown characteristics were observed to have a strong dependence on the top electrode material. Devices with Al top electrodes exhibited signifi

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45

Lyu, Rong-Jhe, and 呂榮哲. "Fabrication of Metal-Oxide Thin-Film Transistors and Inverters with “Film Profile Engineering”." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/3kkm33.

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博士<br>國立交通大學<br>電子工程學系電子研究所<br>104<br>A new “film profile engineering” (FPE) scheme is conceived and established to fabricate sub-micron, high-performance metal-oxide thin film transistors (MO TFTs) and logic gates. In the scheme, a bridge is first constructed to suspend right over the gate electrode with an attempt to shadow the deposited species. Then, miscellaneous apparatuses with specific deposition conditions are employed to prepare the major thin films, i.e. gate dielectric, channel and source/drain (S/D) electrodes, with tailored and desirable film profiles to fabricate MO TFTs displa

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46

"Flexible Electronics Powered by Mixed Metal Oxide Thin Film Transistors." Doctoral diss., 2016. http://hdl.handle.net/2286/R.I.37039.

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abstract: A low temperature amorphous oxide thin film transistor (TFT) and amorphous silicon PIN diode backplane technology for large area flexible digital x-ray detectors has been developed to create 7.9-in. diagonal backplanes. The critical steps in the evolution of the backplane process include the qualification and optimization of the low temperature (200 °C) metal oxide TFT and a-Si PIN photodiode process, the stability of the devices under forward and reverse bias stress, the transfer of the process to flexible plastic substrates, and the fabrication and assembly of the flexible detector

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47

Chiao, Wen-Yu, and 焦文鈺. "3D FEM Simulation of Metal-polymer Bilayer Thin Film Nanoimprint." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/26786585567942851982.

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碩士<br>國立中正大學<br>機械工程所<br>98<br>The polymer thin film layer is mainly used in nanoimprint process. It is uncommonly to apply imprint process to metal thin film due to its ultra-high stamp pressure and spring back problems. How to decide working temperature and metal layer structures to reduce the imprint force becomes the major research topics nowadays. In this thesis, we presented the relation with several parameters to reduce the imprinting force. The numerical mesh quality problems due to large deformation were improved by Coupled Eulerian-Lagrangian (CEL) analysis method. In addition, a FEM

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48

Yi-YinHo and 何怡瑩. "Application of metal silicide thin film to electrode of photodetectors." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/92573296750750005274.

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碩士<br>國立成功大學<br>電機工程學系碩博士班<br>101<br>This thesis reported on the application of metal silicide thin film to electrode of photodectors. The relationship between the phase transitions and sheet resistance of metal silicide films, nickel silicide and ytterbium silicide, were discussed. The sheet resistance of metal silicide with poly silicon as a sacrificial layer was lower than amorphous silicon due to the grain size increasing. The SiNx film as a field insulator layer had lager compress stress than SiO2 film. The compress stress suppressed the phase transition of metal silicide thin films and i

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49

Lin, Hsin-Ying, and 林欣穎. "Design and Analysis of Metal Oxide Thin-Film Transistor Circuits." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/77323052353789253517.

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碩士<br>國立臺灣大學<br>光電工程學研究所<br>99<br>Thin-film transistor (TFT) has been developed to be applied on the flat panel display (FPD) in decades. However, the low mobility and instability of a-Si:H TFTs and the poor uniformity of poly-Si TFTs are insufficient to applied on large size substrate and current driving circuits. The amorphous nature of amorphous oxide semiconductor (AOS) is attractive for manufacturing because of their high mobility (> 10 cm2/Vs), large-area, low-cost, transparent, and possibly flexible electronics applications. In this thesis, a high temperature deposited ZnO film is depo

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50

Tsai, Yun-Kuang, and 蔡昀光. "Study on the electrodeposition of metal-doped DLC thin film." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/62196587810684379533.

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碩士<br>國立中山大學<br>電機工程學系研究所<br>99<br>Recently, synthesis of Diamond-Like Carbon (DLC) films has received considerable interest. Owing to their similar characteristics of diamonds, such as extreme hardness, chemical stability, and high heat conductivity etc, DLC films are regarded as one of the most promising materials. But the practical applications have been limited due to their high internal stress and insufficient adhesion at the interface between DLC film and substrate. Several methods used to the deposition of Me-DLC films have been proposed. Studies have shown that the internal stress was

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