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Journal articles on the topic 'Metal thin film'

Author: Grafiati

Published: 4 June 2021

Last updated: 7 September 2023

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1

Tellier, C. R. "Thin Metal Film Sensors." Active and Passive Electronic Components 12, no. 1 (1985): 9–32. http://dx.doi.org/10.1155/1985/17659.

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During the last decade some progress have been made in the field of sensors using thin film techniques. In particular thin metal film strain gauges and thin film temperature sensors based on the temperature dependent resistivity of metal are now commonly used. But changes in other transport parameters with various measurands are also useful for the design of metal film sensors. Difficulty arises in thin film techniques when structural defects are frozen in films.Intensive theoretical investigations are carried out to explain the effect of grain-boundary and external surface scatterings on transport parameters. Accordingly the main results are presented to specify the influence of film structure on the sensor performance. The grain-boundary effects are discussed according to applications of metal film sensors. Theoretical predictions are analyzed in terms of sensitivity, thermal stability and long term behavior. But other problems induced by the presence of grain boundaries or point defects are also discussed, in particular problems associated with bulk diffusion, electromigration induced failures or intrinsic stresses.

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2

Remhof, Arndt, and Andreas Borgschulte. "Thin-Film Metal Hydrides." ChemPhysChem 9, no. 17 (December 1, 2008): 2440–55. http://dx.doi.org/10.1002/cphc.200800573.

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3

Kraft, O., L. B. Freund, R. Phillips, and E. Arzt. "Dislocation Plasticity in Thin Metal Films." MRS Bulletin 27, no. 1 (January 2002): 30–37. http://dx.doi.org/10.1557/mrs2002.17.

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AbstractThis article describes the current level of understanding of dislocation plasticity in thin films and small structures in which the film or structure dimension plays an important role. Experimental observations of the deformation behavior of thin films, including mechanical testing as well as electron microscopy studies, will be discussed in light of theoretical models and dislocation simulations. In particular, the potential of applying strain-gradient plasticity theory to thin-film deformation is discussed. Although the results of all studies presented follow a “smaller is stronger” trend, a clear functional dependence has not yet been established.

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4

Lee, Jae-Sung, and Kyeong-Keun Choi. "Metal-Semiconductor-Metal Photodetector Fabricated on Thin Polysilicon Film." Journal of the Korean Institute of Electrical and Electronic Material Engineers 30, no. 5 (May 1, 2017): 276–83. http://dx.doi.org/10.4313/jkem.2017.30.5.276.

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5

Chakraborty, Jay. "Phase Transformation in Ultra-Thin Films." Advanced Materials Research 996 (August 2014): 860–65. http://dx.doi.org/10.4028/www.scientific.net/amr.996.860.

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Thickness dependent structural phase transformation in thin polycrystalline metal films has been reviewed. Various effects of film thickness reduction on film microstructure have been identified. Film thickness dependent structural phase transformation has been treated thermodynamically taking polycrystalline titanium (Ti) thin film as model example.

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6

Nair, P. K., O. Gomezdaza, and M. T. S. Nair. "Metal sulphide thin film photography with lead sulphide thin films." Advanced Materials for Optics and Electronics 1, no. 3 (June 1992): 139–45. http://dx.doi.org/10.1002/amo.860010307.

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7

Gallagher, Dennis, Francis Scanlan, Raymond Houriet, Hans Jörg Mathieu, and Terry A. Ring. "Indium-tin oxide thin films by metal-organic decomposition." Journal of Materials Research 8, no. 12 (December 1993): 3135–44. http://dx.doi.org/10.1557/jmr.1993.3135.

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In2O3–SnO2 films were produced by thermal decomposition of a deposit which was dip coated on borosilicate glass substrates from an acetylacetone solution of indium and tin acetoacetonate. Thermal analysis showed complete pyrolysis of the organics by 400 °C. The thermal decomposition reaction generated acetylacetone gas and was found to be first order with an activation energy of 13.6 Kcal/mole. Differences in thermal decomposition between the film and bulk materials were noted. As measured by differential scanning calorimetry using a 40 °C/min temperature ramp, the glass transition temperature of the deposited oxide film was found to be ∼462 °C, and the film crystallization temperature was found to be ∼518 °C. For film fabrication, thermal decomposition of the films was performed at 500 °C in air for 1 h followed by reduction for various times at 500 °C in a reducing atmosphere. Crystalline films resulted for these conditions. A resistivity of ∼1.01 × 10−3 Ω · cm, at 8 wt. % tin oxide with a transparency of ∼95% at 400 nm, has been achieved for a 273 nm thick film.

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8

Iwamori, Satoru. "Adhesion and Friction Properties of Fluorocarbon Polymer Thin Films Coated onto Metal Substrates." Key Engineering Materials 384 (June 2008): 311–20. http://dx.doi.org/10.4028/www.scientific.net/kem.384.311.

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Poly(tetrafluoroethylene)(PTFE) thin films were coated onto metal substrates by a spin coat apparatus, vacuum evaporator and RF sputtering, and their adhesion and friction properties evaluated. PTFE thin film coated onto nickel-titanium (Ni-Ti) substrate by spin coating showed a low friction coefficient, however pull strength between the thin film and Ni-Ti substrate was low. In order to increase the pull strength, PTFE and poly(vinyl alcohol) (PVA) composite thin films were introduced between the PTFE thin film and Ni-Ti substrate by spin coating. PTFE thin film was also coated onto SUS302 substrate by a vacuum evaporator. This PTFE thin film showed poor adhesion to the SUS302 substrate. The adhesion was enhanced by heating of the substrate during the evaporation. In addition, a PTFE and ethylene vinyl alcohol (EVOH) composite thin film showed higher adhesion strength than that of the PTFE thin film. Poly(fluorocarbon) thin films were prepared by a conventional RF sputtering with PTFE target. These thin films showed a higher friction coefficient than that of the pristine PTFE. Molecular structures of the poly(fluorocarbon) thin films prepared by RF sputtering were different from the pristine PTFE. This difference may have influenced the friction coefficient. The pull strength of metal thin films such as gold, copper, nickel and aluminum deposited on the sputtered PTFE thin films by vacuum evaporation was measured. The nickel thin film adhered to the PTFE thin film most strongly of all the thin films.

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9

Liu, Huan, Liang Song, Shun Zhou, and Chang Long Cai. "Thin Metal Films and Multi-Layers Structure as Absorbers for Infrared Detectors." Materials Science Forum 663-665 (November 2010): 352–55. http://dx.doi.org/10.4028/www.scientific.net/msf.663-665.352.

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As thin metal films are known to act as wide-band absorbers for infrared radiation, in this paper Ni metal films are prepared on the Ge surface of double-sided polishing, The results showed the absorbing properties of the metal layer are strongly influenced by the dielectric function of the sensor material. This paper also describes one multi-layers structure as absorber. The structure included a reflector layer of 100-nm-thick Ti (e-beam evaporation), 2-µm-thick polyimide(spin-coating), and 14.9-nm-thick Ni film (e-beam evaporation). These contain a half transmissive thin metal film, a total reflective thin metal film and a quarter-wave polyimide film. The results showed that, measured performance matches well with theoretical predictions.

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10

Hong, Augustin J., Jiyoung Kim, Kyoungwhan Kim, Yong Wang, Faxian Xiu, Jaeseok Jeon, Jemin Park, et al. "Cr metal thin film memory." Journal of Applied Physics 110, no. 5 (September 2011): 054504. http://dx.doi.org/10.1063/1.3626901.

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11

Cherenack, Kunigunde H., Thomas Kinkeldei, Christoph Zysset, and Gerhard Tröster. "Woven Thin-Film Metal Interconnects." IEEE Electron Device Letters 31, no. 7 (July 2010): 740–42. http://dx.doi.org/10.1109/led.2010.2048993.

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12

Kholkin, A. L., R. Martins, H. Águas, I. Ferreira, V. Silva, O. A. Smirnova, M. E. V. Costa, P. M. Vilarinho, E. Fortunato, and J. L. Baptista. "Metal-ferroelectric thin film devices." Journal of Non-Crystalline Solids 299-302 (April 2002): 1311–15. http://dx.doi.org/10.1016/s0022-3093(01)01152-8.

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13

Putz, Barbara, Oleksandr Glushko, Vera M. Marx, Christoph Kirchlechner, Daniel Toebbens, and Megan J. Cordill. "Electro-mechanical performance of thin gold films on polyimide." MRS Advances 1, no. 12 (2016): 773–78. http://dx.doi.org/10.1557/adv.2016.233.

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ABSTRACTThin metal films on compliant polymer substrates are of major interest for flexible electronic technologies. The suitability of a film system for flexible applications is based on the electro-mechanical performance of the metal film/polymer substrate couple. This study demonstrates how a 10 nm Cr interlayer deteriorates the electro-mechanical performance of 50 nm Au films on polyimide substrates by inducing the formation of cracks in the ductile layer. Combined in-situ measurements of the film lattice strains with x-ray diffraction and electrical resistance with four point probe of the Au-Cr and Au layers during uniaxial straining confirmed different electro-mechanical behaviours. For Au films with a Cr interlayer the film stress decreases rapidly as cracking initiates and reaches a plateau as the saturation crack spacing is reached. Crack formation and stress drop correspond to a rapid increase in the film resistance. Without the interlayer the Au film stress reaches a maximum around 2% engineering strain and remains constant throughout the experiment. The film resistance is unaffected by the applied elongation up to a maximum strain of 15%, giving no sign of cracking in the metal layer. The outstanding electro-mechanical performance of the gold film indicates that adhesion layers, like Cr, may not be necessary to improve the performance of ductile films on polymers.

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14

Seok, Seonho, HyungDal Park, and Jinseok Kim. "Scotch-tape surface wrinkling based thin-film material properties extraction." Journal of Micromechanics and Microengineering 32, no. 4 (February 24, 2022): 045002. http://dx.doi.org/10.1088/1361-6439/ac542a.

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Abstract This paper presents a new simple method to measure thin film material properties using scotch-tape surface wrinkling. Thin metal films have been deposited on polymer substrates by e-beam evaporation. After patterned by photolithography and wet etching, long and narrow thin metal layers have been transferred by peel-off onto the scotch tape. The effect of velocity of scotch tape peel-off on the metal film transfer from polymer substrates to the scotch tape has been investigated. After metal transfer, metal film wrinkling patterns have been established on the scotch tape due to mechanical properties mismatch between the two materials. The wrinkling patterns have been characterized in term of amplitude and wavelength and they are compared with finite element method buckling simulation results for material properties extraction. By consequence, elastic moduli of 300 nm thick gold film and a multilayer of 30 nm Ti on 300 nm Au have been found 147 GPa and 885 GPa based on the measured wavelength of the wrinkling films.

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15

Goldsmith, C. C., and C. Van Buskirk. "Residual Stress Measurements on Cr/Ni Pads Evaporated on Polyimide Thin Films." Advances in X-ray Analysis 36 (1992): 203–12. http://dx.doi.org/10.1154/s0376030800018802.

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AbstractPolyimide films are becoming more important in multi-layer structures, acting as dielectric films to separate conductive layers. High thin film residual stresses can cause problems with the polyimide film, leading to loss of adhesion between the metal film and the polyimide or can cause cracking in the polyimide.In this paper, we examine the residual stresses in “as deposited” metal films evaporated onto BTDA-APB polyimide films and follow the change in residual stress of the nickel layer during subsequent thermal processing. We will show that the change in residual stresses can be correlated to the glass transition temperature of the polyimide film.

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16

SHUR, MICHAEL S., SERGEY L. RUMYANTSEV, and REMIS GASKA. "SEMICONDUCTOR THIN FILMS AND THIN FILM DEVICES FOR ELECTROTEXTILES." International Journal of High Speed Electronics and Systems 12, no. 02 (June 2002): 371–90. http://dx.doi.org/10.1142/s0129156402001320.

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We discuss the evolution from wearable electronics and conductive textiles to electrotextiles with embedded semiconducting films and semiconductor devices and review different semiconductor technologies competing for applications in electrotextiles. We also report on fabrication, characterization, and properties of nanocrystalline semiconductor and metal films and thin-film device structures chemically deposited on fibers, cloth, and large area flexible substrates at low temperatures (close to room temperature). Our approach is based on a new process of depositing polycrystalline CdSe (1.75 eV), CdS (2.4 eV), PbS (0.4 eV), PbSe (0.24 eV) and CuxS (semiconductor/metal) films on flexible substrates from the water solutions of complex-salt compounds. We have covered areas up to 8 × 10 inches but the process can be scaled up. The film properties are strongly affected by processing. We fabricated a lateral solar cell with alternating Cu2-xS and nickel contact stripes deposited on top of a view foil. These sets of contacts represented "ohmic" and "non-ohmic" contacts, respectively. Then CdS films of approximately 0.5 μm thick were deposited on top. We also fabricated a "sandwich" type photovoltaic cell, where the CdS film was sandwiched between an In2O3 layer deposited on a view foil and a Cu2-xS layer deposited on top. Both structures exhibited transient response under light, with the characteristic response time decreasing with the illumination wavelength. This is consistent with having deeper localized states in the energy gap determining the transients for shorter wavelength radiation. (Slow transients related to trapping effects are typical for polycrystalline CdS materials.) We also report on the photovoltaic effect in CdS/CuS films deposited on trylene threads and on a field effect in these films deposited on a flexible copper wire. CdS films deposited on viewfoils exhibit unique behavior under stress and UV radiation exposure with reproducible resistance changes of several orders of magnitude with bending up to 10 mm curvature. Our results clearly demonstrate the feasibility of using this technology for photovoltaic and microelectronics applications for electrotextiles and wearable electronics applications.

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17

Nordseth, Ørnulf, Raj Kumar, Kristin Bergum, Laurentiu Fara, Constantin Dumitru, Dan Craciunescu, Florin Dragan, et al. "Metal Oxide Thin-Film Heterojunctions for Photovoltaic Applications." Materials 11, no. 12 (December 19, 2018): 2593. http://dx.doi.org/10.3390/ma11122593.

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Silicon-based tandem solar cells incorporating low-cost, abundant, and non-toxic metal oxide materials can increase the conversion efficiency of silicon solar cells beyond their conventional limitations with obvious economic and environmental benefits. In this work, the electrical characteristics of a metal oxide thin-film heterojunction solar cell based on a cuprous oxide (Cu2O) absorber layer were investigated. Highly Al-doped n-type ZnO (AZO) and undoped p-type Cu2O thin films were prepared on quartz substrates by magnetron sputter deposition. The electrical and optical properties of these thin films were determined from Hall effect measurements and spectroscopic ellipsometry. After annealing the Cu2O film at 900 °C, the majority carrier (hole) mobility and the resistivity were measured at 50 cm2/V·s and 200 Ω·cm, respectively. Numerical modeling was carried out to investigate the effect of band alignment and interface defects on the electrical characteristics of the AZO/Cu2O heterojunction. The analysis suggests that the incorporation of a buffer layer can enhance the performance of the heterojunction solar cell as a result of reduced conduction band offset.

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18

Wu, Chunya, Zhiguo Meng, Shuyun Zhao, Xuedong Li, Zhaojun Liu, Juan Li, Man Wang, Hoi Sing Kwok, and Shaozhen Xiong. "Metal induced crystallized poly-Si Thin Films and Thin Film Transistors." ECS Transactions 22, no. 1 (December 17, 2019): 191–99. http://dx.doi.org/10.1149/1.3152976.

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19

Shaw-Klein, L. J., T. K. Hatwar, S. J. Burns, S. D. Jacobs, and J. C. Lambropoulos. "Anisotropic thermal conductivity of rare earth–transition metal thin films." Journal of Materials Research 7, no. 2 (February 1992): 329–34. http://dx.doi.org/10.1557/jmr.1992.0329.

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Thermal conductivity measurements were performed on several amorphous rare earth transition metal thin films of varying microstructure. The thermal conductivity perpendicular to the plane of the film, measured by the thermal comparator method, was compared with the thermal conductivity value measured parallel to the plane of the film. The latter value was obtained by converting electrical conductivity values to thermal conductivity via the Wiedemann–Franz relationship. As expected, the columnar microstructure induced during the sputter deposition of the thin films causes an anisotropy in the thermal conductivity values, with the in-plane values consistently lower than the out-of-plane values. The effect is most pronounced for the more columnar films deposited at higher pressure, for which the in-plane thermal conductivity, 0.3 W/mK, is an order of magnitude lower than the out-of-plane thermal conductivity, 4.3 W/mK. The thermal conductivity out of the plane of the film decreased with increasing deposition pressure, due to the decreasing film density.

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20

Lin, Qijing, Fuzheng Zhang, Na Zhao, and Ping Yang. "Influence of Annealing Temperature on Optical Properties of Sandwiched ZnO/Metal/ZnO Transparent Conductive Thin Films." Micromachines 13, no. 2 (February 13, 2022): 296. http://dx.doi.org/10.3390/mi13020296.

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Two sandwiched ZnO/Metal/ZnO transparent conductive thin films, 50nm ZnO/Cu/50nm ZnO (abbreviated as ZnO(Cu)) and 50nm ZnO/Ti/Cu/Ti/50nm ZnO (abbreviated as ZnO(Ti/Cu)) were deposited by magnetron sputtering technology. The comparative analysis of experiment results shows that the introduction of the Ti layer is beneficial to the overall properties of ZnO(Ti/Cu) thin film compared to ZnO(Cu) thin film with the same metal layer thickness. The effect of the annealing temperature on the performance of the two film systems was studied. Although the carrier concentration did not always increase with annealing temperature, the sheet resistances did decrease due to the obvious increase of mobility. The transmittance of ZnO(Cu) thin films increases with annealing temperature, while that of ZnO(Ti/Cu) films increases at first and then decreases. The optical band gap of ZnO(Cu) thin films increases with temperature, but is lower than that of ZnO(Ti/Cu) thin films, whose bandgap first increases with temperature and then decreases. The figure of merit of the ZnO(Ti/Cu) film is better than that of ZnO(Cu), which shows that the overall performance of ZnO(Ti/Cu) films is better, and annealing can improve the performance of the film systems.

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21

Sato, Yuichi, Toshifumi Suzuki, Hiroyuki Mogami, Fumito Otake, Hirotoshi Hatori, and Suguru Igarashi. "Solid Phase Growth of some Metal and Metal Oxide Thin Films on Sapphire and Quartz Glass Substrates." Materials Science Forum 753 (March 2013): 505–9. http://dx.doi.org/10.4028/www.scientific.net/msf.753.505.

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Solid phase growth of thin films of copper (Cu), aluminum (Al) and zinc oxide (ZnO) on single crystalline sapphire and quartz glass substrates were tried by heat-treatments and their crystallization conditions were investigated. ZnO thin films relatively easily recrystallized even when they were deposited on the amorphous quartz glass substrate. On the other hand, Cu and Al thin films hardly recrystallized when they were deposited on the quartz glass substrate. The metal thin films could be recrystallized at only extremely narrow windows of the heat-treatment conditions when they were deposited on the single crystalline sapphire substrate. The window of the solid phase heteroepitaxial growth condition of the Al film was wider than that of the Cu film.

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22

Shen, Y.-L. "Strength and interface-constrained plasticity in thin metal films." Journal of Materials Research 18, no. 10 (October 2003): 2281–84. http://dx.doi.org/10.1557/jmr.2003.0317.

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This study seeks to provide a mechanistic rationale for the substrate confinement effect on the strength and plasticity of thin metal films. Atomistic simulations of tensile loading of the freestanding and substrate-bonded films were carried out. Particular attention was devoted to correlating the overall mechanical response and the defect mechanisms on the atomic scale. The existence of an interface with the underlying substrate was observed to constrain significantly the dislocation motion in the film. The extent of film strengthening due to the substrate was dictated by the capability of atoms to slide along the interface.

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23

Lubenchenko A. V., Ivanov D. A., Lubenchenko O. I., Pavolotsky A.B., Lukiantsev D. S., Iachuk V. A., and Pavlov O. N. "Formation of inhomogeneous oxide and suboxide layers on an ultra-thin metal film by multiple oxidation and ion sputtering." Technical Physics 92, no. 8 (2022): 990. http://dx.doi.org/10.21883/tp.2022.08.54561.68-22.

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A technique of controlled formation of multilayer oxide and suboxide layers on a thin metal film. An opportunity of controlled generation of films containing an ultra-thin suboxide layer inside a higher oxide layer and films being a periodic layered structure with alternating oxide layers of various oxidation levels. A structure containing alternating ultra-thin layers of higher oxide and suboxide layers on a niobium film. Keywords: metal-oxide films, controlled film formation, layer chemical and phase profiling, X-ray photoelectron spectroscopy.

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24

Yang, Yang, Liping Ma, and Jianhua Wu. "Organic Thin-Film Memory." MRS Bulletin 29, no. 11 (November 2004): 833–37. http://dx.doi.org/10.1557/mrs2004.237.

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AbstractRecently, organic nonvolatile memory devices have attracted considerable attention due to their low cost and high performance. This article reviews recent developments in organic nonvolatile memory and describes in detail an organic electrical bistable device (OBD) that has potential for applications. The OBD consists of a tri-layer of organics/metal nanoclusters/organics sandwiched between top and bottom electrodes. A sufficiently high applied bias causes the metal nanoparticle layer to become polarized, resulting in charge storage near the two metal/organic interfaces. This stored charge lowers the resistance of the device and leads to an electrical switching behavior. The ON and OFF states of an OBD differ in their conductivity by several orders of magnitude and show remarkable bistability—once either state is reached, the device tends to remain in that state for a prolonged period of time. More important, the conductivity states of an OBD can be precisely controlled by the application of a positive voltage pulse (to write) or a negative voltage pulse (to erase). Device performance tests show that the OBD is a promising candidate for high-density, low-cost electrically addressable data storage applications.

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25

Popescu, R., D. Macovei, A. Devenyi, R. Manaila, P. B. Barna, A. Kovacs, and J. L. Lábár. "Metal clusters in metal/C thin film nanosystems." European Physical Journal B 13, no. 4 (February 2000): 737–43. http://dx.doi.org/10.1007/s100510050093.

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26

Miceli, P. F., H. Zabel, J. A. Dura, and C. P. Flynn. "Anomalous lattice expansion of metal-hydrogen thin films." Journal of Materials Research 6, no. 5 (May 1991): 964–68. http://dx.doi.org/10.1557/jmr.1991.0964.

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We report x-ray diffraction experiments investigating the lattice expansion due to hydrogen in Nb/Ta superlattices and thin Nb films. For low hydrogen concentrations (cH < 0.09 H/metal), the lattice expands only normal to the plane of the film due to the epitaxial constraints imposed by the substrate. At higher concentrations, corresponding to strains on the order of the critical strains expected for the formation of misfit dislocations, we find a structural instability which leads to the formation of two metal-H phases, one of which has a lattice expansion in the plane of the film. These results differ significantly from the expected phase diagram and properties of the bulk metal-H systems.

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27

Grodzicki, Miłosz. "Properties of Thin Film-Covered GaN(0001) Surfaces." Materials Proceedings 2, no. 1 (May 13, 2020): 30. http://dx.doi.org/10.3390/ciwc2020-06833.

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In this paper, the surface properties of bare and film-covered gallium nitride (GaN) of the wurtzite form, (0001) oriented are summarized. Thin films of several elements—manganese, nickel, arsenic and antimony—are formed by the physical vapour deposition method. The results of the bare surfaces as well as the thin film/GaN(0001) phase boundaries presented are characterized by X-ray and ultraviolet photoelectron spectroscopies (XPS, UPS). Basic information about electronic properties of GaN(0001) surfaces are shown. Different behaviours of thin films after post-deposition annealing in ultrahigh vacuum conditions, such as surface alloying, subsurface dissolving and desorbing, are found. The metal films form surface alloys with gallium (NiGa, MnGa), while the semi-metal (As, Sb) layers easily evaporate from the GaN(0001) surface. However, the layer in direct contact with the substrate can react with it modifying the surface properties of GaN(0001).

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28

Zelenskiy, Vladimir I., and Pavel E. Troyan. "Properties moulded thin-film nanostructure." Yugra State University Bulletin 11, no. 2 (June 15, 2015): 53–57. http://dx.doi.org/10.17816/byusu201511253-57.

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Are considered: technology of reception of thin-film frame metal-dielectric-metal; the properties got by frame as a result of electrical moulding in strong electric field in vacuo: volt-ampere characteristic, issue of electrons in vacuum. The model of resulting electrical moulding of nanostructure is discussed.

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29

Dongquoc, Viet, Dong-Bum Seo, Cao Viet Anh, Jae-Hyun Lee, Jun-Hong Park, and Eui-Tae Kim. "Controlled Surface Morphology and Electrical Properties of Sputtered Titanium Nitride Thin Film for Metal–Insulator–Metal Structures." Applied Sciences 12, no. 20 (October 15, 2022): 10415. http://dx.doi.org/10.3390/app122010415.

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Titanium nitride (TiN) is a material of interest for electrodes owing to its high-temperature stability, robustness, low-cost, and suitable electrical properties. Herein, we studied the surface morphology and electrical properties of TiN thin film deposited onto an Si/SiO2 <100> substrate through direct current (DC) sputtering with a high-purity TiN target in an argon-gas environment. The electrical properties and surface morphology of TiN thin film significantly improved with increased source power and decreased working pressure. The improved electrical properties could be attributed to the suppressed secondary phase (Ti2N) formation and the reduced electron scattering on smoother surface. Consequently, high-quality TiN thin film with the lowest resistivity (ρ = 0.1 mΩ·cm) and the smallest surface roughness (RMS roughness, Rq = 0.3 nm) was obtained under the optimized condition. The TiN film was further used as the bottom electrode for a metal–insulator–metal (MIM) capacitor. Results demonstrated that the electrical properties of TiN film were comparable to those of noble-metal thin films. Therefore, the TiN thin film fabricated by DC sputtering method had excellent electrical properties and good Rq, indicating its potential applications in MIM capacitors and Si technology

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30

Swider, Karen E., and Wayne L. Worrell. "Metal-organic deposition of thin-film yttria-stabilized zirconia-titania." Journal of Materials Research 11, no. 2 (February 1996): 381–86. http://dx.doi.org/10.1557/jmr.1996.0046.

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Mixed-conducting yttria-stabilized zirconia-titania (YZTi) has attractive applications in solid oxide fuel cells (SOFC's) and electrocatalysis, particularly when used as a thin film to reduce its electrical resistance. Thin films of yttria (12 mol %) stabilized zirconia-titania (8 mol %) have been prepared using metal-organic deposition (MOD) whereby metal-organic solutions of Zr-, Y-, and Ti-2-ethylhexanoates are spun onto suitable substrates. Variables affecting the film surface-morphology, chemistry, and crystal structure are examined using scanning electron microscopy (SEM), auger electron spectroscopy (AES), and x-ray diffraction (XRD), respectively. Uniform, pore-free films having a low carbon content (<1 at. %) are made by sintering on a hot plate at 530 °C. The effect of thermal cycling on the chemical compatibility and adherence is examined for YZTi films on yttria-stabilized zirconia substrates.

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31

KAMASAKI, Seiji. "Hydrogen in Thin Film Metal Hydrides." Journal of the Surface Finishing Society of Japan 45, no. 12 (1994): 1198–202. http://dx.doi.org/10.4139/sfj.45.1198.

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32

Shadrina, V. I., I. A. Bashmakov, V. E. Agabekov, and F. N. Kaputskii. "Thin film net metal-polymer composites." Russian Journal of General Chemistry 80, no. 6 (June 2010): 1064–67. http://dx.doi.org/10.1134/s1070363210060058.

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33

Grytsenko, K., Yu Kolomzarov, O. Lytvyn, V. Strelchuk, V. Ksianzou, S. Schrader, H. Beyer, et al. "Metal-Filled Polytetrafluoroethylene Nanostructered Thin Film." Advanced Science Letters 3, no. 3 (September 1, 2010): 308–12. http://dx.doi.org/10.1166/asl.2010.1127.

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34

Stallinga, P., and H. L. Gomes. "Metal contacts in thin-film transistors." Organic Electronics 8, no. 4 (August 2007): 300–304. http://dx.doi.org/10.1016/j.orgel.2006.11.004.

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Lokhande, C. D., D. P. Dubal, and Oh-Shim Joo. "Metal oxide thin film based supercapacitors." Current Applied Physics 11, no. 3 (May 2011): 255–70. http://dx.doi.org/10.1016/j.cap.2010.12.001.

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Ralls, K. S., R. A. Buhrman, and R. C. Tiberio. "Fabrication of thin‐film metal nanobridges." Applied Physics Letters 55, no. 23 (December 4, 1989): 2459–61. http://dx.doi.org/10.1063/1.102001.

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37

Mohamat Kasim, Shafaq Mardhiyana, Nor Azira Akma Shaari, Raudah Abu Bakar, and Sukreen Hana Herman. "Switching Behavior of Titania-Zinc Oxide Composites Thin Films." Applied Mechanics and Materials 749 (April 2015): 308–12. http://dx.doi.org/10.4028/www.scientific.net/amm.749.308.

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Single layer of titanium dioxide (TiO2) is common metal oxide in fabricating memristor device. In this study, two types of memristor with composite metal oxide thin films will be demonstrated. The two types of memristor are titanium dioxide (TiO2) thin film coated on zinc oxide (ZnO) thin film and ZnO coated on TiO2 thin film. Sol-gel spin coating method was to coat metal oxide thin film and sputtering method for depositing the metal contact. Platinum (Pt) was selected as the top electrode and indium tin oxide (ITO) as the bottom electrode. The electrical characteristics were defined by performing I-V measurement using two point probe equipment. I-V characteristics showed shape of pinched hysteresis loop for both samples. Sample with TiO2 coated on ZnO has slightly higher Roff/Ron ratio than sample ZnO coated on TiO2 which means it more memristive than another one. The cross-section of sample with TiO2 coated on ZnO had been performed as well by using Field-Emission Scanning Electron Microscopy (FESEM).

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Tu, Sheng Lung, Yen Hsun Su, Yun Hwei Shen, Dah Tong Ray, Yu Chun Wu, and Tao Hsing Chen. "Photo-Electronic Properties of Titanium Dioxide Nano Thin Films." Applied Mechanics and Materials 479-480 (December 2013): 50–54. http://dx.doi.org/10.4028/www.scientific.net/amm.479-480.50.

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In this study, nano-titanium films of different thickness were deposited. By adjusting it is found that when the thickness of the titanium films was in the nano-scale, the electric resistivity of the titanium films decreased. Furthermore, the deposited titanium was transformed into titanium oxide by maintain an oxygen atmosphere and using a rapid annealing furnace during sputtering. When oxidized nano titanium film is sputtered on a low-electric-resistive metal thin film, the photo-electronic properties of Nano-thin film will be enhanced.

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Sun, Xiao Hua, Xiu Neng Li, Sheng Gang Zhou, Shuang Hou, Tian You Peng, and Xing Zhong Zhao. "The Dielectric and Tunable Properties of Graded Fe Doped PST Thin Films Fabricated by Sol-Gel Method." Advanced Materials Research 287-290 (July 2011): 2322–26. http://dx.doi.org/10.4028/www.scientific.net/amr.287-290.2322.

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Fe doped up-graded and down-graded PST thin films were prepared on Pt/Ti/SiO2/Si with sol–gel method. Crystal structure and surface morphology of graded PST thin films were characterized by X-ray diffraction (XRD) and atom force microscope (AFM). The dielectric measurements were conducted on metal-insulator-metal capacitors at the frequency from 100 Hz to 1M Hz and at room temperature. It was found that the up-graded PST thin film had a larger dielectric constant and lower figure of merit (FOM) than the down-graded film. At 1M Hz, the tunability of up-graded PST thin film was about 65.48%, which was higher than that (about 41.84%) of down-graded PST thin film. The FOM of up-graded and down-graded PST thin films were 16.3 and 9.2, respectively. Our results showed that the dielectric tunable properties of the Fe doped graded PST films depended strongly on the direction of the composition gradient of the graded PST films.

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40

Li, Juan, Cong Chun Zhang, Yan Lei Wang, Yang Gao, and Xiao Lin Zhao. "Radio Frequency (RF) Magnetron Sputtered Barium Strontium Titanate (BST) Thin Film." Key Engineering Materials 727 (January 2017): 942–46. http://dx.doi.org/10.4028/www.scientific.net/kem.727.942.

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Barium strontium titanate (BST) thin films with excellent dielectric properties are deposited by on-axis RF magnetron sputtering system. The effects of composition of the target and oxygen partial pressure on the microstructure of BST thin film have been investigated. The dielectric properties of the thin films are investigated. The results show that composition of BST thin film deposited with pure argon ambient by the target with 30atm% excess of Ba and Sr is stoichiometric. Perovskite phase can be observed in the thin film annealed in oxygen at 750 °C for 30 min. A metal-insulator-metal (MIM) capacitor is fabricated by microfabrication technique. The capacitance value at 2 GHz is 0.417 pF and 1.42 pF for 50 nm and 90 nm BST thin film respectively, and the leakage current density is 6×10-6 A/cm2 and 5.35×10-8 A/cm2 respectively.

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Willey, Ronald R., and Olaf Stenzel. "Designing Optical Coatings with Incorporated Thin Metal Films." Coatings 13, no. 2 (February 6, 2023): 369. http://dx.doi.org/10.3390/coatings13020369.

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In the world of nanomaterials and meta-materials, thin films are used which are an order of magnitude thinner than historically used in optical thin film coatings. A problem stems from the island structure that is seen as the film nucleates and grows until there is coalescence or percolation of the islands into a nearly continuous film. The application problem is that the indices of refraction, n and k, vary with thickness from zero thickness up to some thickness such as 30 or 40 nanometers for silver. This behavior will be different from material to material and deposition process to deposition process; it is hardly modeled by simple mathematical functions. It has been necessary to design with only fixed thicknesses and associated indices instead. This paper deals with a tool for the practical task of designing optical thin films in this realm of non-bulk behavior of indices of refraction; no new research is reported here. Historically, two applications are known to have encountered this problem because of their thin metal layers which are on the order of 10 nm thick: (1) architectural low emittance (Low-E) coatings on window glazing with thin silver layers, and (2) black mirrors which transmit nothing and reflect as little as possible over the visible spectrum with thin layers of chromium or related metals. The contribution reported here is a tool to remove this software limitation and model thin layers whose indices vary in thickness.

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Zaitz, M. A. "Small Area X-Ray Fluorescence Analysis of Multilayer Thin Metal Films." Advances in X-ray Analysis 37 (1993): 219–27. http://dx.doi.org/10.1154/s037603080001572x.

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AbstractThin film technology has become an integral part of semiconductor multichip ceramic packages. Characterizing the thickness of multimetal multilayer thin film structures that combine both thin and thick films is an important parameter for manufacturing process control and development. Accuracies in the range of 3-5% and precisions of 1.3% were attained on multilayer metal films ranging from a few hundred angstroms to tens of thousands of angstroms.

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43

Faezahana, Mokhter, Nayan Nafarizal, Jia Wei Low, Che Ani Norhidayah, Mohd Zainizan Sahdan, Mohd Khairul Ahmad, Ali Yeon Md Shakaff, Zakaria Ammar, and Mohd Zain Ahmad Faizal. "2D and 3D Analyses of Metal Oxide Thin Films Examined by Atomic Force Microscope." Applied Mechanics and Materials 773-774 (July 2015): 716–19. http://dx.doi.org/10.4028/www.scientific.net/amm.773-774.716.

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Atomic force microscope (AFM) is a useful tool to capture the two- and three-dimensional image of height and size of nanostructured thin film. It operate by measuring the forces between a sharp tip and surface of the measured sample. In addition, AFM is equipped with powerful software for image processing to interpret experimental results in detail. For example, by using the height and scanning length parameters of measured sample, average roughness and root mean square roughness can be evaluated. In the present works, the effect of image flattening process toward the surface roughness and surface fluctuations of metal oxide thin films will be presented. Set of samples were prepared by magnetron sputtering deposition and sol-gel coating techniques. In gas sensor industries using metal oxide thin film, surface roughness of metal oxide thin films are very important in order to improve the sensitivity and respond time of gas sensor. Therefore, optimization of thin film deposition and characterization are very important. The correlation between the three-dimensional image and thin film deposition and image processing parameters will also be presented.

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Ruffino, Francesco, and Maria Grazia Grimaldi. "Nanostructuration of Thin Metal Films by Pulsed Laser Irradiations: A Review." Nanomaterials 9, no. 8 (August 6, 2019): 1133. http://dx.doi.org/10.3390/nano9081133.

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Metal nanostructures are, nowadays, extensively used in applications such as catalysis, electronics, sensing, optoelectronics and others. These applications require the possibility to design and fabricate metal nanostructures directly on functional substrates, with specifically controlled shapes, sizes, structures and reduced costs. A promising route towards the controlled fabrication of surface-supported metal nanostructures is the processing of substrate-deposited thin metal films by fast and ultrafast pulsed lasers. In fact, the processes occurring for laser-irradiated metal films (melting, ablation, deformation) can be exploited and controlled on the nanoscale to produce metal nanostructures with the desired shape, size, and surface order. The present paper aims to overview the results concerning the use of fast and ultrafast laser-based fabrication methodologies to obtain metal nanostructures on surfaces from the processing of deposited metal films. The paper aims to focus on the correlation between the process parameter, physical parameters and the morphological/structural properties of the obtained nanostructures. We begin with a review of the basic concepts on the laser-metal films interaction to clarify the main laser, metal film, and substrate parameters governing the metal film evolution under the laser irradiation. The review then aims to provide a comprehensive schematization of some notable classes of metal nanostructures which can be fabricated and establishes general frameworks connecting the processes parameters to the characteristics of the nanostructures. To simplify the discussion, the laser types under considerations are classified into three classes on the basis of the range of the pulse duration: nanosecond-, picosecond-, femtosecond-pulsed lasers. These lasers induce different structuring mechanisms for an irradiated metal film. By discussing these mechanisms, the basic formation processes of micro- and nano-structures is illustrated and justified. A short discussion on the notable applications for the produced metal nanostructures is carried out so as to outline the strengths of the laser-based fabrication processes. Finally, the review shows the innovative contributions that can be proposed in this research field by illustrating the challenges and perspectives.

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Muhunthan, N., Om Pal Singh, Son Singh, and V. N. Singh. "Growth of CZTS Thin Films by Cosputtering of Metal Targets and Sulfurization in H2S." International Journal of Photoenergy 2013 (2013): 1–7. http://dx.doi.org/10.1155/2013/752012.

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Copper zinc tin sulfide (CZTS) is an emerging thin film photovoltaic material. Chemical composition and phase purity are important factors which decide the quality of the film for photovoltaic applications. In the present work, we report the results of the morphological, structural, optical, and electrical characterizations of Cu2ZnSnS4thin films, synthesized by sulfurizing magnetron cosputtered Cu2ZnSn thin films in ambient H2S. To the best of our knowledge, this is the first report on CZT deposition by cosputtering from Cu, Zn, and Sn targets and sulfurizing it in ambient H2S for making CZTS thin films. GIXRD and Raman study results showed that the film was kesterite CZTS. Optical absorbance studies revealed a band gap value of ~1.5 eV for CZTS thin film. Results of the Hall effect measurements are also reported.

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46

Hwang, Byungil, Yurim Han, and Paolo Matteini. "BENDING FATIGUE BEHAVIOR OF AG NANOWIRE/CU THIN-FILM HYBRID INTERCONNECTS FOR WEARABLE ELECTRONICS." Facta Universitatis, Series: Mechanical Engineering 20, no. 3 (November 30, 2022): 553. http://dx.doi.org/10.22190/fume220730040h.

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Enhancing the mechanical reliability of metal interconnects is important for achieving highly reliable flexible/wearable electronic devices. In this study, Ag nanowire and Cu thin-film hybrid interconnects were explored as a novel concept to enhance mechanical reliability under bending fatigue. Bending fatigue tests were conducted on the Cu thin films and Cu/Ag nanowire/polyimide (CAP) interconnects. The increase in resistance was larger for the Cu thin films than for the CAP. The single-component Cu electrodes showed multiple crack initiation and propagation due to bending strain, which degraded the electrical conductivity. In CAP, however, no long-range cracks were observed, even after 300,000 cycles of bending, although a wavy structure was observed, probably due to the delamination of the Ag nanowires under repeated bending. Our study confirms that flexible Ag nanowire and metal thin-film hybrids can enhance the mechanical reliability of metal thin-film interconnects under bending fatigue.

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47

Torii, Kazuyoshi, Fumiko Yano, and Yoshihisa Fujisaki. "Role of ozone in reactive coevaporation of lead zirconate titanate thin films." Journal of Materials Research 13, no. 4 (April 1998): 1015–21. http://dx.doi.org/10.1557/jmr.1998.0142.

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The role of ozone in the reactive coevaporation of the lead zirconate titanate thin film was investigated by depositing films at various growth rates with various ozone fluxes or molecular oxygen fluxes on unheated substrates and then crystallizing them using rapid thermal annealing. The oxidation state of lead in the as-deposited film was determined from the ratio of the ozone to the total metal fluxes. The amount of atomic oxygen supplied to the surface of the film was at least 103 times larger when the deposition was done using ozone rather than molecular oxygen. When the ozone flux was more than one-third of the total metal flux, well-oxidized films were obtained. To ensure obtaining well-oxidized film, the ozone flax should be more than twice as much.

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48

Yan, Jiwang, Kenta Watanabe, and Yutaro Nakagawa. "Fabrication of Thin-Film Fresnel Optics by Combining Diamond Turning and Photolithographic Processes." International Journal of Automation Technology 7, no. 4 (July 5, 2013): 385–90. http://dx.doi.org/10.20965/ijat.2013.p0385.

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A novel fabrication process is proposed for manufacturing thin-film metal Fresnel lenses for X-ray applications. This process combines diamond turning technology and photolithographic processes. To prevent thin-film lens substrates from deflection during diamond turning, films were prepared on single crystalline silicon wafers by electrolytic plating. After the Fresnel lens structure is generated on the metal thin films by diamond turning, the silicon substrate was then removed selectively by reactive ion etching. Experimental results demonstrated that the proposed hybrid fabrication process achieves submicron form accuracy and nanometer surface roughness.

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Oleksak, Richard P., William F. Stickle, and Gregory S. Herman. "Aqueous-based synthesis of gallium tungsten oxide thin film dielectrics." Journal of Materials Chemistry C 3, no. 13 (2015): 3114–20. http://dx.doi.org/10.1039/c4tc02985b.

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50

Wayne Goodman, D. "Surface spectroscopic studies of model supported-metal catalysts." Proceedings, annual meeting, Electron Microscopy Society of America 53 (August 13, 1995): 394–95. http://dx.doi.org/10.1017/s0424820100138348.

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A new surface science approach to the study of supported-metal catalysts will be described. Thin oxide films (~100 Å) of SiO2, Al2O3, or MgO supported on a refractory metal substrate (e.g., Mo or W) have been prepared by depositing the oxide metal precursor in a background of oxygen (ca. l×l0-5 Torr) [1]. The thin-film catalysts facilitate investigation by an array of surface techniques, many of which are precluded when applied to the corresponding bulk oxide [1,2]. In particular, the oxide films have been characterized by AES, ELS, HREELS, XPS, UPS, ISS, IRAS, and TD spectroscopies and shown to have essentially identical electronic and vibrational properties of the corresponding bulk oxides. These studies indicate then that these films can serve as convenient models for oxide catalysts or metal supports. Metal thin films (e.g., Cu, Pd, Ni) have subsequently been deposited onto the oxide films and the properties of the metal/oxide system then studied with the above array of surface techniques [3]. By properly defining the metal thin film thickness, metal particles of varying sizes can be synthesized with dispersions from a few nanometers to tens of nanometers.

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