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Journal articles on the topic 'Microelectronic devices'

Author: Grafiati

Published: 4 June 2021

Last updated: 25 July 2025

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1

Brodie, I., and P. R. Schwoebel. "Vacuum microelectronic devices." Proceedings of the IEEE 82, no. 7 (1994): 1006–34. http://dx.doi.org/10.1109/5.293159.

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2

von Windheim, Tasso, Kristin H. Gilchrist, Charles B. Parker, et al. "Proof-of-Concept Vacuum Microelectronic NOR Gate Fabricated Using Microelectromechanical Systems and Carbon Nanotube Field Emitters." Micromachines 14, no. 5 (2023): 973. http://dx.doi.org/10.3390/mi14050973.

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This paper demonstrates a fully integrated vacuum microelectronic NOR logic gate fabricated using microfabricated polysilicon panels oriented perpendicular to the device substrate with integrated carbon nanotube (CNT) field emission cathodes. The vacuum microelectronic NOR logic gate consists of two parallel vacuum tetrodes fabricated using the polysilicon Multi-User MEMS Processes (polyMUMPs). Each tetrode of the vacuum microelectronic NOR gate demonstrated transistor-like performance but with a low transconductance of 7.6 × 10−9 S as current saturation was not achieved due to a coupling effe

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3

Srivastava, V. "THz vacuum microelectronic devices." Journal of Physics: Conference Series 114 (May 1, 2008): 012015. http://dx.doi.org/10.1088/1742-6596/114/1/012015.

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4

Ren, Yanru, Min Zhu, Dongyu Xu, et al. "Overview on Radiation Damage Effects and Protection Techniques in Microelectronic Devices." Science and Technology of Nuclear Installations 2024 (March 30, 2024): 1–17. http://dx.doi.org/10.1155/2024/3616902.

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With the rapid advancement of information technology, microelectronic devices have found widespread applications in critical sectors such as nuclear power plants, aerospace equipment, and satellites. However, these devices are frequently exposed to diverse radiation environments, presenting significant challenges in mitigating radiation-induced damage. Hence, this review aims to delve into the intricate damage mechanisms of microelectronic devices within various radiation environments and highlight the latest advancements in radiation-hardening techniques. The ultimate goal is to bolster the r

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5

MANUSHIN, Dmitrii V., Guzel' R. TAISHEVA, and Shamil' I. ENIKEEV. "Russian microelectronics: Current state-of-the-art, logistics, management issues, crisis response measures." National Interests: Priorities and Security 19, no. 5 (2023): 808–42. http://dx.doi.org/10.24891/ni.19.5.808.

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Subject. This article discusses the prospects for the development of Russian microelectronics and import substitution issues. Objectives. The article aims to develop measures to support Russian developers of microelectronic devices. Methods. For the study, we used the abstract-logical, computational-constructive, and case study methods. Results. The article proposes certain measures to support the microelectronics industry in Russia. Conclusions. The proposed measures can help prevent a crisis in the microelectronics industry in the face of sanctions imposed against Russia.

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6

Chen, Yuan, and Xiao Wen Zhang. "Applications of Focused Ion Beam Technology in Bonding Failure Analysis for Microelectronic Devices." Applied Mechanics and Materials 58-60 (June 2011): 2171–76. http://dx.doi.org/10.4028/www.scientific.net/amm.58-60.2171.

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Focused ion beam (FIB) system is a powerful microfabrication tool which uses electronic lenses to focus the ion beam even up to nanometer level. The FIB technology has become one of the most necessary failure analysis and failure mechanism study tools for microelectronic device in the past several years. Bonding failure is one of the most common failure mechanisms for microelectronic devices. But because of the invisibility of the bonding interface, it is difficult to analyze this kind of failure. The paper introduced the basic principles of FIB technology. And two cases for microelectronic de

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7

Min, K. H., and J. Mardinly. "Electron Tomography of Microelectronic Devices." Microscopy and Microanalysis 9, S02 (2003): 502–3. http://dx.doi.org/10.1017/s1431927603442517.

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8

Ekpu, M., R. Bhatti, M. I. Okereke, and K. C. Otiaba. "Fatigue life analysis of Sn96.5Ag3.0Cu0.5 solder thermal interface material of a chip-heat sink assembly in microelectronic applications." International Symposium on Microelectronics 2013, no. 1 (2013): 000473–77. http://dx.doi.org/10.4071/isom-2013-wa23.

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The reliability of microelectronic devices during operation has been a major challenge in recent years. Microelectronics devices will fail if one or more components do not function properly. Thermal interface materials are more likely to fail because of the role they play in heat management. Lead free solders such as SAC305 solder (Sn96.5Ag3.0Cu0.5) have become the thermal materials of interest because of their high thermal conductivity and government legislations on the ban of lead. Ansys finite element software was used for the design and analysis of the microelectronic device studied. The b

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9

OSADCHUK, Iaroslav. "MICROELECTRONIC AUTOGENERATOR TEMPERATURE SENSORS." Herald of Khmelnytskyi National University. Technical sciences 317, no. 1 (2023): 237–47. http://dx.doi.org/10.31891/2307-5732-2023-317-1-237-247.

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Microelectronic autogenerator temperature sensors based on transistor structures with differential negative resistance with primary parametric thermosensitive elements based on bipolar and field-effect transistors are proposed, moreover, primary parametric thermosensitive elements are active components of the circuits of parametric autogenerator temperature sensors, which greatly simplifies the design of the device. Based on the consideration of physical processes in primary parametric temperature-sensitive components and autogenerators of temperature sensors, mathematical models of autogenera

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10

Криштоп, В. Г., Д. А. Жевненко, П. В. Дудкин та ін. "ТЕХНОЛОГИЯ И ПРИМЕНЕНИЕ ЭЛЕКТРОХИМИЧЕСКИХ ПРЕОБРАЗОВАТЕЛЕЙ". NANOINDUSTRY Russia 96, № 3s (2020): 450–55. http://dx.doi.org/10.22184/1993-8578.2020.13.3s.450.455.

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Электрохимические системы очень перспективны для разработки новой элементной базы для микроэлектроники и для использования в широком спектре инженерных задач. Мы разработали новую микроэлектронную технологию для изготовления электрохимических преобразователей (ЭХП) и новые приборы на основе новых электрохимических микроэлектронных чипов. Планарные электрохимические преобразователи могут использоваться в акселерометрах, сейсмических датчиках, датчиках вращения, гидрофонах и датчиках давления. Electrochemical systems are very promising for the development of a new element base for microelectroni

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11

Azizov, А. R. "Microelectronic device for determining telecontrol signal pulse quality." E3S Web of Conferences 458 (2023): 09020. http://dx.doi.org/10.1051/e3sconf/202345809020.

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The application of electromagnetic relays in control systems on railway transport is very problematic. The solution of this problem is based on modelling processes and application of microelectronic devices. The functional scheme for different modes of operation of the telecontrol signal decryption device is developed and investigated. Graphs and algorithm of microelectronic unit operation are given.

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12

Sluckuvienė, Zita, and Lidija Božė. "Technologies and materials that have enabled the miniaturization of electronic elements." Applied Scientific Research 2, no. 2 (2023): 151–59. http://dx.doi.org/10.56131/tmt.2023.2.2.178.

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This article introduces the technologies used in microelectronics manufacturing (integrated circuits, printed circuit boards, etc.) It reviews traditional semiconductor materials (germanium, silicon) and some of the best the most famous and promising, but currently still being researched, semiconductor materials (carbon nanotubes, graphene). The article briefly describes Lithuania's potential in the production of microelectronic devices. Key words: semiconductor, nanotubes, integrated circuits, printed circuit boards, PIC.

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13

Azizov, Asadulla, Elnora Ametova, and Feruza Shakirova. "Integrated microelectronic pulse shaper for automation and telemechanic systems in railway transport." E3S Web of Conferences 402 (2023): 03005. http://dx.doi.org/10.1051/e3sconf/202340203005.

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The significance of the production of the integrated microelectronic pulse shaper, which is used in railway automation and telemechanics systems, plays an important role in ensuring the safety of train traffic, and can completely replace track and pendulum transmitters, and the electrical circuits of the device are presented based on research and the principles of using microelectronic devices in the production process. It has been experimentally proven that the integrated microelectronic pulse shaper works without interfering with each other in the production of parallel codes. Values calcula

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14

Fowler, Michelle, Dongshun Bai, Curt Planje, and Xie Shao. "High-Aspect Ratio Planarization using Self-Leveling Materials." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2012, DPC (2012): 002567–86. http://dx.doi.org/10.4071/2012dpc-tha35.

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There are an increasing number of applications in the microelectronics industry that require materials that can fill and planarize high-aspect ratio topography. These applications call for the formation of a flat coating surface without the use of high bake temperatures or high-pressure processes. Potential device markets include MEMS, 3D-ICs, LEDs, semiconductors, flat panel displays and related microelectronic and optoelectronic devices. Various polymeric coating materials have been developed that have intrinsic self-leveling properties and are able to fill deep trenches and holes found on m

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15

Northrop, D. C. "Book Review: Introduction to Microelectronic Devices." International Journal of Electrical Engineering & Education 27, no. 1 (1990): 93. http://dx.doi.org/10.1177/002072099002700139.

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16

Baikerikar, K. K., and A. B. Scranton. "Photopolymerizable liquid encapsulants for microelectronic devices." Polymer 42, no. 2 (2001): 431–41. http://dx.doi.org/10.1016/s0032-3861(00)00388-8.

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17

Osenbach, John W. "Corrosion-induced degradation of microelectronic devices." Semiconductor Science and Technology 11, no. 2 (1996): 155–62. http://dx.doi.org/10.1088/0268-1242/11/2/002.

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18

Gorham, D. A. "Analysis of microelectronic materials and devices." Microelectronics Journal 24, no. 5 (1993): 594. http://dx.doi.org/10.1016/0026-2692(93)90143-3.

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19

Blackmore, G. W. "Analysis of Microelectronic Materials and Devices." Journal of Electroanalytical Chemistry 326, no. 1-2 (1992): 363–64. http://dx.doi.org/10.1016/0022-0728(92)80525-9.

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20

Tyler, Talmage, Olga A. Shenderova, and Gary E. McGuire. "Vacuum microelectronic devices and vacuum requirements." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 23, no. 4 (2005): 1260–66. http://dx.doi.org/10.1116/1.1885019.

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21

Gray, H. F. "The physics of vacuum microelectronic devices." IEEE Transactions on Electron Devices 36, no. 11 (1989): 2599. http://dx.doi.org/10.1109/16.43690.

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22

Schreutelkamp, R. J. "Analysis of microelectronic materials and devices." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 72, no. 1 (1992): 143. http://dx.doi.org/10.1016/0168-583x(92)95294-2.

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23

Adams, F. "Analysis of Microelectronic Materials and Devices." Analytica Chimica Acta 268, no. 1 (1992): 189. http://dx.doi.org/10.1016/0003-2670(92)85264-7.

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24

Lin, Yadi, and Wendi Lin. "The Impact of Predictability and Fault Tolerance on Reliability in Microelectronic Device Design and Manufacturing." International Journal of Engineering and Technology 16, no. 1 (2024): 57–60. http://dx.doi.org/10.7763/ijet.2024.v16.1255.

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This article thoroughly examines the crucial role of predictive analytics and fault tolerance mechanisms in enhancing the reliability of microelectronic devices throughout their design and manufacturing processes. Emphasizing the importance of implementing these measures across the entire lifecycle, including design, manufacturing, and application phases, the study adopts a comprehensive approach. The methodology integrates predictive analytics tools and fault tolerance mechanisms, proactively identifying and mitigating potential issues early on. Results demonstrate a significant reduction in

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25

Liu, Shiqian, Keith Sweatman, Stuart McDonald, and Kazuhiro Nogita. "Ga-Based Alloys in Microelectronic Interconnects: A Review." Materials 11, no. 8 (2018): 1384. http://dx.doi.org/10.3390/ma11081384.

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Gallium (Ga) and some of its alloys have a range of properties that make them an attractive option for microelectronic interconnects, including low melting point, non-toxicity, and the ability to wet without fluxing most materials—including oxides—found in microelectronics. Some of these properties result from their ability to form stable high melting temperature solid solutions and intermetallic compounds with other metals, such as copper, nickel, and aluminium. Ga and Ga-based alloys have already received significant attention in the scientific literature given their potential for use in the

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26

Hawker, Craig J., James L. Hedrick, Robert D. Miller, and Willi Volksen. "Supramolecular Approaches to Nanoscale Dielectric Foams for Advanced Microelectronic Devices." MRS Bulletin 25, no. 4 (2000): 54–58. http://dx.doi.org/10.1557/mrs2000.30.

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The increasing demands of miniaturization in the microelectronics industry has forced continual improvement in the materials that are used in the fabrication of semiconductor devices. Advances in photoresists for microlithographic applications have reduced the feature size to 0.25 µm and below, and this drive to eversmaller features, coupled with the introduction of copper, has placed increasing demands on the dielectric material. Materials with lower dielectric constants (depicted in dark gray in Figure 1) are therefore required to more efficiently insulate these submicron features, such as t

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27

Li, Shiyi, Yuecen Zhao, Wenzhong Lou, et al. "Electromagnetic pulse impact characterization of MEMS devices." Journal of Physics: Conference Series 2982, no. 1 (2025): 012003. https://doi.org/10.1088/1742-6596/2982/1/012003.

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Abstract In order to meet the needs of microelectronic devices for EMP protection, a MEMS electromagnetic energy sparing mechanism based on the principle of microcorona discharge and MEMS process is proposed to provide a design solution for electromagnetic pulse protection of microelectronic devices. The MEMS electromagnetic energy channeling mechanism is small in size, with a fast response time and low cost, and it is the first choice of microelectronic devices for EMP protection. Based on the MEMS process, the fabrication process and response principle of the MEMS electromagnetic energy-spar

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28

Arduino, Daniele, Stefano Stassi, Chiara Spano, Luciano Scaltrito, Sergio Ferrero, and Valentina Bertana. "Silicon and Silicon Carbide Recrystallization by Laser Annealing: A Review." Materials 16, no. 24 (2023): 7674. http://dx.doi.org/10.3390/ma16247674.

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Modifying material properties within a specific spatial region is a pivotal stage in the fabrication of microelectronic devices. Laser annealing emerges as a compelling technology, offering precise control over the crystalline structure of semiconductor materials and facilitating the activation of doping ions in localized regions. This obviates the necessity for annealing the entire wafer or device. The objective of this review is to comprehensively investigate laser annealing processes specifically targeting the crystallization of amorphous silicon (Si) and silicon carbide (SiC) samples. Sili

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29

Karnaushenko, Daniil, Tong Kang, Vineeth K. Bandari, Feng Zhu, and Oliver G. Schmidt. "3D Microelectronics: 3D Self‐Assembled Microelectronic Devices: Concepts, Materials, Applications (Adv. Mater. 15/2020)." Advanced Materials 32, no. 15 (2020): 2070120. http://dx.doi.org/10.1002/adma.202070120.

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30

Ahmed, Wase U. "Metallography of Microelectronic Devices / Metallographie mikroelektronischer Bauteile." Practical Metallography 39, no. 8 (2002): 437–48. http://dx.doi.org/10.1515/pm-2002-390807.

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31

Ruhl, Guenther, Sebastian Wittmann, Matthias Koenig, and Daniel Neumaier. "The integration of graphene into microelectronic devices." Beilstein Journal of Nanotechnology 8 (May 15, 2017): 1056–64. http://dx.doi.org/10.3762/bjnano.8.107.

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Since 2004 the field of graphene research has attracted increasing interest worldwide. Especially the integration of graphene into microelectronic devices has the potential for numerous applications. Therefore, we summarize the current knowledge on this aspect. Surveys show that considerable progress was made in the field of graphene synthesis. However, the central issue consists of the availability of techniques suitable for production for the deposition of graphene on dielectric substrates. Besides, the encapsulation of graphene for further processing while maintaining its properties poses a

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32

Larson, D. J., D. Lawrence, W. Lefebvre, et al. "Toward atom probe tomography of microelectronic devices." Journal of Physics: Conference Series 326 (November 9, 2011): 012030. http://dx.doi.org/10.1088/1742-6596/326/1/012030.

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33

Mecklenburg, Matthew, William A. Hubbard, E. R. White, et al. "Nanoscale temperature mapping in operating microelectronic devices." Science 347, no. 6222 (2015): 629–32. http://dx.doi.org/10.1126/science.aaa2433.

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Modern microelectronic devices have nanoscale features that dissipate power nonuniformly, but fundamental physical limits frustrate efforts to detect the resulting temperature gradients. Contact thermometers disturb the temperature of a small system, while radiation thermometers struggle to beat the diffraction limit. Exploiting the same physics as Fahrenheit’s glass-bulb thermometer, we mapped the thermal expansion of Joule-heated, 80-nanometer-thick aluminum wires by precisely measuring changes in density. With a scanning transmission electron microscope and electron energy loss spectroscopy

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34

Górski, Bartosz, Jonas Rein, Samantha Norris, Yanxin Ji, Paul L. McEuen, and Song Lin. "Light-harvesting microelectronic devices for wireless electrosynthesis." Nature 637, no. 8045 (2025): 354–61. https://doi.org/10.1038/s41586-024-08373-1.

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35

Chin, K. Ken, and R. B. Marcus. "Field emitter tips for vacuum microelectronic devices." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 8, no. 4 (1990): 3586–90. http://dx.doi.org/10.1116/1.576511.

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36

Würfl, Joachim, Vera Abrosimova, Jochen Hilsenbeck, Erich Nebauer, Walter Rieger, and Günther Tränkle. "Reliability considerations of III-nitride microelectronic devices." Microelectronics Reliability 39, no. 12 (1999): 1737–57. http://dx.doi.org/10.1016/s0026-2714(99)00181-x.

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37

Berbezier, I., and A. Ronda. "Si/SiGe heterostructures for advanced microelectronic devices." Phase Transitions 81, no. 7-8 (2008): 751–72. http://dx.doi.org/10.1080/01411590802130576.

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38

Liechti, K. M. "Residual stresses in plastically encapsulated microelectronic devices." Experimental Mechanics 25, no. 3 (1985): 226–31. http://dx.doi.org/10.1007/bf02325091.

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39

Hersee, S. D., L. Yang, M. Kao, et al. "MOMBE GaAs and AlGaAs for microelectronic devices." Journal of Crystal Growth 120, no. 1-4 (1992): 218–27. http://dx.doi.org/10.1016/0022-0248(92)90394-x.

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40

Mizoguchi, Katsuhiro, and Etsuo Hasegawa. "Photoactive Polymers Applied to Advanced Microelectronic Devices." Polymers for Advanced Technologies 7, no. 5-6 (1996): 471–77. http://dx.doi.org/10.1002/(sici)1099-1581(199605)7:5/6<471::aid-pat534>3.0.co;2-r.

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41

Wietrzak, A., and D. Poulikakos. "Turbulent forced convective cooling of microelectronic devices." International Journal of Heat and Fluid Flow 11, no. 2 (1990): 105–13. http://dx.doi.org/10.1016/0142-727x(90)90003-t.

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42

Mammadova, A. M., A. N. Mammadova, and R. N. Valiyev. "Application of injection transistors in microelectronic devices." Proceedings Natural and Technical sciences, no. 01 (2024): 85. http://dx.doi.org/10.59849/3006-1318.2024.1.85.

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43

Yang, Qing, John Mardinly, Christian Kübel, Chris Nelson, and Christian Kisielowski. "Electron tomography of microelectronic device interconnects." International Journal of Materials Research 97, no. 7 (2006): 880–84. http://dx.doi.org/10.1515/ijmr-2006-0142.

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Abstract As the dimensions of microelectronic devices continue to decrease, single transmission electron microscopy images are not able to properly represent the 3D structures when the structure’s curvature is comparable to the sample thickness. Electron tomography was used to study cylindrical vias coated with Ta-barrier layers and Cu-seed layers in 3D. Tomography reconstructions from both bright field images and high angle annular dark field images are presented. Fidelity of the reconstruction from single-axis and dual-axis tilt series is compared. Strategies for improving the fidelity of th

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44

Wong Mian Sheng, Abdulhafid M Elfaghi, and Lukmon Owolabi Afolabi. "Numerical Study on Heat Propagation in Laptop Cooling System." Journal of Advanced Research in Fluid Mechanics and Thermal Sciences 99, no. 1 (2022): 58–65. http://dx.doi.org/10.37934/arfmts.99.1.5865.

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Thermal management of microelectronic devices has become increasingly important to maintain their performance and prolonging the lifespan of the devices. In this study, numerical simulation has been conducted to investigate the heat propagation for high performance microelectronic device of laptop. Two models are constructed and Ansys Fluent is used for the Computational Fluid Dynamics (CFD) simulation, source term is applied at the heat source, heat sink and two different material heat pipes are the main cooling components in the system. The results show that the improved design model is a be

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45

Wang, Guang Yin. "Investigation Progress on Microelectronic Materials: Carbon Nanotube and Graphene." Advanced Materials Research 531 (June 2012): 165–67. http://dx.doi.org/10.4028/www.scientific.net/amr.531.165.

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In this paper, the structures and electrical properties of carbon nanotube and graphene were introduced, which have advantage in making microelectronic materials. The achievements and methods in construction of microelectronic devices were also discussed. In the last, how to make carbon nanotube and graphene were elaborated.

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46

Baranov, M. A., E. K. Karseeva, and O. Yu Tsybin. "Prototypes of devices for heterogeneous hybrid semiconductor electronics with an embedded biomolecular domain." Микроэлектроника 52, no. 6 (2023): 497–507. http://dx.doi.org/10.31857/s0544126923600185.

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A macromolecular system embedded in a semiconductor microelectronic device is considered as a biomolecular nano- or micro-sized domain that performs the functions of converting acoustic and electromagnetic signals. The issues of the choice of substances, the dynamic and structural-functional state of the domain, as well as the physical foundations of its interaction with matrix elements are discussed. The process of excitation of forced vibrations in amino acid molecules (for example, glycine, tryptophan, diphenyl-L-alanine) under the influence of short (10–100 ps) packets of electrical signal

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47

Moon, F. C. "Mechanics of Electronic and Electromechanical Devices." Applied Mechanics Reviews 38, no. 10 (1985): 1294–96. http://dx.doi.org/10.1115/1.3143696.

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Problems involving the interaction of electromagnetic material effects and forces with stresses, deformations, and dynamics span a wide spectrum from thermal strain problems in microelectronic chips to stresses in large superconducting magnets for fusion reactors, NMR scanners, and levitated trains. An important class of problems that merits increased research effort are the mechanics problems associated with transducers or sensors based on ferroelectric, ferromagnetic, semiconductor, or microelectronic materials. Another area which may have technological payoff is that of electromechanical ac

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48

Lauer, Scott, Whitten Little, Pier Benci, Tim Schmitt, and John Mazurowski. "Additive Manufacturing of Fine Lines and Embedded Electronics for use in Chip Carriers and Microelectronic Systems." International Symposium on Microelectronics 2012, no. 1 (2012): 000946–48. http://dx.doi.org/10.4071/isom-2012-wp53.

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Additive manufacturing is the application of layer manufacturing techniques to fabricate microelectronic products. These techniques differentiate themselves from incumbent technologies in that they only add material to build the device and are an alternative to subtractive technologies such as lithography that globally coat layers and then etch-away unrequired materials. In this paper we discuss an additive technology that performs material evaporation through shadow masks. This process has shown significant potential for the fabrication of chip packaging, microelectronic devices and circuitry

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49

Lauer, Scott, Whitten Little, Thomas Ambrose, Jeff Conrad, and Tim Cowen. "Precision Patterned Thin Films without Photolithography: Additive Manufacturing of Printed Electronics." International Symposium on Microelectronics 2013, no. 1 (2013): 000927–31. http://dx.doi.org/10.4071/isom-2013-thp55.

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Additive manufacturing is the application of layer manufacturing techniques to fabricate microelectronic products. These techniques differentiate themselves from incumbent technologies in that they only add material to build the device and are an alternative to subtractive technologies such as lithography that globally coat layers and then etch-away unrequired materials. In this paper we discuss an additive technology that performs material evaporation through shadow masks. This process has shown significant potential for the fabrication of chip packaging, microelectronic devices and circuitry

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50

Azizov, Asadulla. "Development and research of a model of a microprocessor device of a set-up control unit for paired points." E3S Web of Conferences 402 (2023): 03019. http://dx.doi.org/10.1051/e3sconf/202340203019.

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The use of electromagnetic relays in railway control systems is very problematic. The solution to this problem is based on process modelling and the use of microelectronic devices. The functional scheme for different modes of operation of twin switches control unit has been developed and investigated. Algorithms and functional scheme of microelectronic unit are given.

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