Relevant bibliographies by topics / Microprocessors Metal oxide semiconductors

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Microprocessors Metal oxide semiconductors'

Author: Grafiati
Published: 4 June 2021
Last updated: 4 February 2022

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Journal articles on the topic "Microprocessors Metal oxide semiconductors"

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Bernstein, Kerry. "Circuit Responses to Radiation-Induced Upsets." MRS Bulletin 28, no. 2 (February 2003): 126–30. http://dx.doi.org/10.1557/mrs2003.40.

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AbstractHistorically, radiation-induced corruption of data in high-speed complementary metal oxide semiconductor designs has been limited to on-board static random-access memory in various memory caches. Successive generations of scaling, however, have resulted in capacitance reductions in key logic circuits, increasing their vulnerability to these “soft errors.” Charge delivered by radiation events now carries a substantial probability of inducing upsets, not only in bistable elements, but in logic evaluation circuits as well. This article introduces the reader to common logic-circuit topologies in high-speed microprocessors, radiation circuit response mechanisms that can compromise logic evaluation integrity, and existing techniques that mitigate this exposure.
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Fitzgerald, E. A., and L. C. Kimerling. "Silicon-Based Microphotonics and Integrated Optoelectronics." MRS Bulletin 23, no. 4 (April 1998): 39–47. http://dx.doi.org/10.1557/s0883769400030256.

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The need for integrated optical interconnects in electronic systems is derivedfrom the cost and performance of electronic systems. If we examine the cost of all interconnects, it becomes apparent that there is an exponential growth in cost per interconnect with the length of the interconnect. A remarkable feature of interconnect cost is that the exponential relation holds over all length scales—from the shortest interconnects on a chip to the longest interconnects in global telecommunications networks. Longer interconnects are drastically more expensive, and these costs are ultimately related to the labor cost associated with each interconnect. Given this economic pressure, it is not surprising that there is a driving force to condense more functions locally on the same chip, board, or system. In condensing these functions, the number of long interconnects are decreased and the overall cost of the electronic system decreases dramatically. A specific glaring example of this driving force is Si complementary-metal-oxide-semiconductor (CMOS) technology, especially the case of microprocessors. In the Si microprocessor case, the flood gates to interconnect condensation were opened and the miraculous trend of lower cost for exponentially increasing performance was revealed.
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Packan, Paul A. "Scaling Transistors into the Deep-Submicron Regime." MRS Bulletin 25, no. 6 (June 2000): 18–21. http://dx.doi.org/10.1557/mrs2000.93.

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The dominant device used in the semiconductor industry today is the silicon-based metal oxide semiconductor (MOS) transistor. The MOS transistor consists of a source, drain, channel, and gate region fabricated in single-crystal silicon (Figure 1). The source region provides a supply of mobile charge when the device is turned “on.” The source is electrically isolated from the drain by the channel region, which is oppositely charged. An insulating oxide layer between the gate and the channel region forms a capacitor. During operation, a voltage is applied to the gate. By applying the appropriate voltage, a conductive layer of charge can be attracted in the channel region at the oxide/silicon interface. This layer of charge acts as a wire that effectively connects the source and drain regions. By changing the voltage on the gate, the conducting layer of charge can be removed. Thus the transistor acts like a switch, with the gate electrode controlling the connection from the source to the drain. These individual switches can be connected to form the basic building blocks for circuit design. These building blocks are used to create the high-performance microprocessors and memory chips in today's computers.
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Aseev, Aleksander Leonidovich, Alexander Vasilevich Latyshev, and Anatoliy Vasilevich Dvurechenskii. "Semiconductor Nanostructures for Modern Electronics." Solid State Phenomena 310 (September 2020): 65–80. http://dx.doi.org/10.4028/www.scientific.net/ssp.310.65.

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Modern electronics is based on semiconductor nanostructures in practically all main parts: from microprocessor circuits and memory elements to high frequency and light-emitting devices, sensors and photovoltaic cells. Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) with ultimately low gate length in the order of tens of nanometers and less is nowadays one of the basic elements of microprocessors and modern electron memory chips. Principally new physical peculiarities of semiconductor nanostructures are related to quantum effects like tunneling of charge carriers, controlled changing of energy band structure, quantization of energy spectrum of a charge carrier and a pronounced spin-related phenomena. Superposition of quantum states and formation of entangled states of photons offers new opportunities for the realization of quantum bits, development of nanoscale systems for quantum cryptography and quantum computing. Advanced growth techniques such as molecular beam epitaxy and chemical vapour epitaxy, atomic layer deposition as well as optical, electron and probe nanolithography for nanostructure fabrication have been widely used. Nanostructure characterization is performed using nanometer resolution tools including high-resolution, reflection and scanning electron microscopy as well as scanning tunneling and atomic force microscopy. Quantum properties of semiconductor nanostructures have been evaluated from precise electrical and optical measurements. Modern concepts of various semiconductor devices in electronics and photonics including single-photon emitters, memory elements, photodetectors and highly sensitive biosensors are developed very intensively. The perspectives of nanostructured materials for the creation of a new generation of universal memory and neuromorphic computing elements are under lively discussion. This paper is devoted to a brief description of current achievements in the investigation and modeling of single-electron and single-photon phenomena in semiconductor nanostructures, as well as in the fabrication of a new generation of elements for micro-, nano, optoelectronics and quantum devices.
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Nakada, Kazuki, Tetsuya Asai, and Yoshihito Amemiya. "Biologically-Inspired Locomotion Controller for a Quadruped Walking Robot: Analog IC Implementation of a CPG-Based Controller." Journal of Robotics and Mechatronics 16, no. 4 (August 20, 2004): 397–403. http://dx.doi.org/10.20965/jrm.2004.p0397.

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The present paper proposes analog integrated circuit (IC) implementation of a biologically inspired controller in quadruped robot locomotion. Our controller is based on the central pattern generator (CPG), which is known as the biological neural network that generates fundamental rhythmic movements in locomotion of animals. Many CPG-based controllers for robot locomotion have been proposed, but have mostly been implemented in software on digital microprocessors. Such a digital processor operates accurately, but it can only process sequentially. Thus, increasing the degree of freedom of physical parts of a robot deteriorates the performance of a CPG-based controller. We therefore implemented a CPG-based controller in an analog complementary metal-oxide-semiconductor (CMOS) circuit that processes in parallel essentially, making it suitable for real-time locomotion control in a multi-legged robot. Using the simulation program with integrated circuit emphasis (SPICE), we show that our controller generates stable rhythmic patterns for locomotion control in a quadruped walking robot, and change its rhythmic patterns promptly.
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Eaglesham, David J. "What We Still Don't Know About Silicon." MRS Bulletin 19, no. 12 (December 1994): 57–60. http://dx.doi.org/10.1557/s0883769400048739.

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A question sometimes posed to researchers in silicon is: Why are you still working on silicon? How much more do we need to learn? Not only is Si a relatively simple element, it is one of the most common in the earth's crust. This element has been very extensively studied. One reason we keep studying silicon is because it is not just an element, it is also an industry. The microelectronics business has a massive economic impact on our lives. From cars to washing machines, almost all consumer goods contain silicon microprocessors in some form. Our daily lives depend on the stuff. Figure 1 shows the predominance of Si in a breakdown of the microelectronics industry. In 1994 microelectronics has been a $1 × 1011-per year industry worldwide, and it is still growing rapidly. CMOS, or complementary metal-oxide-semiconductor transistors, dominate this business, some being bipolar. The entire compound semiconductor industry is a small part of this picture, composing 2% of the business (although $2 billion is not bad for a “niche” market). The $100 billion business built around silicon makes it the most important element in world economics, although there is some evidence that C and O may also be important for the support of our daily lives. One thing, however, is clear-the economic need to understand silicon and everything it does is tremendous.
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Kushwah, Preeti, Saurabh Khandelwal, and Shyam Akashe. "Multi-Threshold Voltage CMOS Design for Low-Power Half Adder Circuit." International Journal of Nanoscience 14, no. 05n06 (October 2015): 1550022. http://dx.doi.org/10.1142/s0219581x15500222.

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The new era of portable electronic devices demands lesser power dissipation for longer battery life and design compactability. Leakage current and leakage power are dominating factors which greatly affect the power consumption in low voltage and low power applications. For many numerical representations of binary numbers, combinational circuits like adder, encoder, multiplexer, etc. are useful circuits for arithmetic operation. A novel high speed and low power half adder cell is introduced here which consists of AND gate and OR gate. This cell shows high speed, lower power consumption than conventional half adder. In CMOS technology, transistors used have small area and low power consumption. It is used in various applications like adder, subtract or, multiplexer, ALU and microprocessors digital VLSI systems. As the scaling technology reduces, the leakage power increases. In this paper, multi threshold complementary metal oxide semiconductor (MTCMOS) technique is proposed to reduce the leakage current and leakage power. MTCMOS is an effective circuit level technique that increases the performance of a cell by using both low- and high-threshold voltage transistors. Leakage current is reduced by 85.37% and leakage power is reduced by 87.45% using MTCMOS technique as compared to standard CMOS technique. The half adder design simulation work was performed by cadence simulation tool at 45-nm technology.
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John, Vimukth, Shylu Sam, S. Radha, P. Sam Paul, and Joel Samuel. "Design of a power-efficient Kogge–Stone adder by exploring new OR gate in 45nm CMOS process." Circuit World 46, no. 4 (March 23, 2020): 257–69. http://dx.doi.org/10.1108/cw-12-2018-0104.

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Purpose The purpose of this work is to reduce the power consumption of KSA and to improve the PDP for data path applications. In digital Very Large – Scale Integration systems, the addition of two numbers is one of the essential functions. This arithmetic function is used in the modern digital signal processors and microprocessors. The operating speed of these processors depends on the computation of the arithmetic function. The speed computation block for most of the datapath elements was adders. In this paper, the Kogge–Stone adder (KSA) is designed using XOR, AND and proposed OR gates. The proposed OR gate has less power consumption due to the less number of transistors. In arithmetic logic circuit power, delay and power delay products (PDP) are considered as the important parameters. The delays reported for the proposed OR gate are less when compared with the conventional Complementary Metal Oxide Semiconductor (CMOS) OR gate and pre-existing logic styles. The proposed circuits are optimized in terms of power, delay and PDP. To analyze the performance of KSA, extensive Cadence Virtuoso simulations are used. From the simulation results based on 45 nm CMOS process, it was observed that the proposed design has obtained 688.3 nW of power consumption, 0.81 ns of delay and 0.55 fJ of PDP at 1.1 V. Design/methodology/approach In this paper, a new circuit for OR gate is proposed. The KSA is designed using XOR, AND and proposed OR gates. Findings The proposed OR gate has less power consumption due to the less number of transistors. The delays reported for the proposed OR gate are less when compared with the conventional CMOS OR gate and pre-existing logic styles. The proposed circuits are optimized in terms of power, delay and PDP. Originality/value In arithmetic logic circuit power, delay and PDP are considered as the important parameters. In this paper, a new circuit for OR gate is proposed. The power consumption of the designed KSA using the proposed OR gate is very less when compared with the conventional KSA. Simulation results show that the performance of the proposed KSA are improved and suitable for high speed applications.
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Adhikari, Sangeeta, and Debasish Sarkar. "Metal oxide semiconductors for dye degradation." Materials Research Bulletin 72 (December 2015): 220–28. http://dx.doi.org/10.1016/j.materresbull.2015.08.009.

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Kiriakidis, George, and Vassilios Binas. "Metal oxide semiconductors as visible light photocatalysts." Journal of the Korean Physical Society 65, no. 3 (August 2014): 297–302. http://dx.doi.org/10.3938/jkps.65.297.

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Dissertations / Theses on the topic "Microprocessors Metal oxide semiconductors"

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Correll, Jeffrey. "The design and implementation of an 8 bit CMOS microprocessor /." Online version of thesis, 1992. http://hdl.handle.net/1850/11649.

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Baird, John Malcolm Edward. "A micro processor based A.C. drive with a Mosfet inverter." Thesis, Cape Technikon, 1991. http://hdl.handle.net/20.500.11838/1119.

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Thesis (Masters Diploma (Electrical Engineering)--Cape Technikon, Cape Town,1991
A detailed study into the development of a three phase motor drive, inverter and microprocessor controller using a scalar control method. No mathematical modelling of the system was done as the drive was built around available technology. The inverter circuit is of a Vo~tage source inverter configuration whicp uses MOSFETs switching at a base frequency of between 1.2 KHz and 2 KHz. Provision has been made for speed control and dynamic braking for special applications, since the drive is not going to be put into a specific application as yet, it was felt that only a basic control should be implemented and space should be left for special requests from prospective customers. The pulses for the inverter are generated from the HEF 4752 I.e. under the control of the micro processor thus giving the processor full control over the inverter and allowing it to change almost any parameter at any time. Although the report might seem to cover a lot of unimportant ground it is imperative that the reader is supplied with the back-ground information in order to understand where A.e. drives failed in the past and where A.e. drives are heading in the future. As well as where this drive seeks to use available technology to the best advantage.
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Al-Ahmadi, Ahmad Aziz. "Complementary orthogonal stacked metal oxide semiconductor a novel nanoscale complementary metal oxide semiconductor architecture /." Ohio : Ohio University, 2006. http://www.ohiolink.edu/etd/view.cgi?ohiou1147134449.

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Pesci, Federico M. "Metal oxide semiconductors employed as photocatalysts during water splitting." Thesis, Imperial College London, 2014. http://hdl.handle.net/10044/1/24964.

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Photocatalytic water splitting has attracted significant interest in recent decades as it offers a clean and environmentally friendly route for the production of hydrogen. A key challenge remains the development of systems that employ abundant, non-toxic and inexpensive materials to dissociate water efficiently using sunlight. Titanium dioxide (TiO2), tungsten trioxide (WO3) and hematite (α-Fe2O3) are among the most studied photoanodes employed during water splitting because of the position of their valence band which is suitable for oxidising water to oxygen, and their low costs. However reported efficiencies for these materials are below the reported theoretical maximum values. A good understanding of the factors that are limiting the efficiency of these photoanodes is therefore desirable if improvements in the photocatalytic activity are to be achieved. This thesis is divided in four main sections. Chapters 3 and 4 describe transient absorption spectroscopy (TAS) studies in the microsecond-second timescales carried out on WO3 photoelectrodes and TiO2 nanowires respectively. TAS has been employed to follow the charge carriers dynamics in WO3 highlighting the presence of relatively long-lived holes (30 ms), which have been described as a requirement for the water oxidation reaction to take place. The electrons also appear to be long-lived (0.1 s), and this has been proposed to be due to slow electron transport through the film. TAS measurements have also been carried out on oxygen-deficient hydrogen-treated TiO2 nanowires, highlighting a more efficient suppression of the electron/hole recombination process in comparison with conventional anatase TiO2 photoanodes. Chapter 5 describes TAS and sum frequency generation (SFG) studies on TiO2 films which are designed to investigate the surface mechanisms of water oxidation. The dependence of the hole lifetime on the pH of the electrolytes employed has been examined by TAS and substantially faster decay rates have been found in highly alkaline solutions suggesting a change in the mechanism of water oxidation. Consequently, SFG has been employed in order to detect any possible intermediate at the interface TiO2/water. Initial measurements have provided the evidence of physisorbed and chemisorbed methanol (model probe) on the TiO2 surface and further studies at the TiO2/water interface have been carried out. Chapter 6 describes the development of a hybrid solar fuel reactor coupling a α-Fe2O3 based photoelecrochemical cell with luminescent solar concentrator plates. Initial tests have been carried out on a proof of principle prototype providing encouraging results.
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Gurcan, Zeki B. "0.18 [mu]m high performance CMOS process optimization for manufacturability /." Online version of thesis, 2005. http://hdl.handle.net/1850/5197.

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Wu, Ting. "Design of terabits/s CMOS crossbar switch chip /." View Abstract or Full-Text, 2003. http://library.ust.hk/cgi/db/thesis.pl?ELEC%202003%20WU.

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Thesis (M. Phil.)--Hong Kong University of Science and Technology, 2003.
Includes bibliographical references (leaves 100-105). Also available in electronic version. Access restricted to campus users.
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Huang, Amy. "On the plasma induced degradation of organosilicate glass (OSG) as an interlevel dielectric for sub 90 nm CMOS /." Online version of thesis, 2008. http://hdl.handle.net/1850/5899.

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Özdağ, Pınar Güneş Mehmet. "Capacitance-voltage spectroscopy in metal-tantalum pentoxide (Ta-O)-silicon mos capacitors/." [s.l.]: [s.n.], 2005. http://library.iyte.edu.tr/tezler/master/fizik/T000397.pdf.

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Thesis (Master)--İzmir Institute of Technology, İzmir, 2005
Keywords: Capacitance-voltage spectroscopy, high dielectric constant insulators, tantalum pentoxide. Includes bibliographical references (leaves 92-97)
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Waghe, Anil Bhalchandra. "Synthesis of Porous Monoclinic Tungsten Oxides and Their Application in Sensors." Fogler Library, University of Maine, 2003. http://www.library.umaine.edu/theses/pdf/WagheAB2003.pdf.

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Du, Xiaohua. "Understanding and optimization of gas sensors based on metal oxide semiconductors." Connect to online resource, 2007. http://gateway.proquest.com/openurl?url_ver=Z39.88-2004&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&res_dat=xri:pqdiss&rft_dat=xri:pqdiss:3284441.

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Books on the topic "Microprocessors Metal oxide semiconductors"

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inc, Motorola. M68HC11 reference manual. Phoenix, Ariz: Motorola, 1990.

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Bernstein, Kerry. SOI circuit design concepts. Boston: Kluwer Academic Publishers, 2000.

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Zhao, Yi. Wafer level reliability of advanced CMOS devices and processes. New York: Nova Science Publishers, 2008.

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Lancaster, Don. CMOS cookbook. 2nd ed. Indianapolis, Ind: H.W. Sams, 1988.

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M, Berlin Howard, ed. CMOS cookbook. 2nd ed. Boston: Newnes, 1997.

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Nicollian, E. H. MOS (metal oxide semiconductor) physics and technology. Hoboken, N.J: Wiley-Interscience, 2003.

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Pfaffli, Paul. Characterisation of degradation and failure phenomena in MOS devices. Konstanz [Germany]: Hartung-Gorre, 1999.

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Sato, Norio. Electrochemistry at metal and semiconductor electrodes. Amsterdam: Elsevier, 1998.

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F, Hawkins Charles, ed. CMOS electronics: How it works, how it fails. New York: IEEE Press, 2004.

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Helms, Harry L. High-speed (HC/HCT) CMOS guide. Englewood Cliffs, N.J: Prentice Hall, 1989.

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Book chapters on the topic "Microprocessors Metal oxide semiconductors"

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Janotti, A., J. B. Varley, J. L. Lyons, and C. G. Van de Walle. "Controlling the Conductivity in Oxide Semiconductors." In Functional Metal Oxide Nanostructures, 23–35. New York, NY: Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4419-9931-3_2.

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Baratto, Camilla, Elisabetta Comini, Guido Faglia, Matteo Ferroni, Andrea Ponzoni, Alberto Vomiero, and Giorgio Sberveglieri. "Transparent Metal Oxide Semiconductors as Gas Sensors." In Transparent Electronics, 417–42. Chichester, UK: John Wiley & Sons, Ltd, 2010. http://dx.doi.org/10.1002/9780470710609.ch17.

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Fukumura, Tomoteru, and Masashi Kawasaki. "Magnetic Oxide Semiconductors: On the High-Temperature Ferromagnetism in TiO2- and ZnO-Based Compounds." In Functional Metal Oxides, 89–131. Weinheim, Germany: Wiley-VCH Verlag GmbH & Co. KGaA, 2013. http://dx.doi.org/10.1002/9783527654864.ch3.

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Jongh, L. J. "Superconductivity by Local Pairs (Bipolarons) in Doped Metal Oxide Semiconductors." In Mixed Valency Systems: Applications in Chemistry, Physics and Biology, 223–46. Dordrecht: Springer Netherlands, 1991. http://dx.doi.org/10.1007/978-94-011-3606-8_13.

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Ameen, Sadia, M. Shaheer Akhtar, Hyung-Kee Seo, and Hyung Shik Shin. "Metal Oxide Semiconductors and their Nanocomposites Application Towards Photovoltaic and Photocatalytic." In Advanced Energy Materials, 105–66. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2014. http://dx.doi.org/10.1002/9781118904923.ch3.

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Hartnagel, H. L., and V. P. Sirkeli. "The Use of Metal Oxide Semiconductors for THz Spectroscopy of Biological Applications." In IFMBE Proceedings, 213–17. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-31866-6_43.

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Körösi, L., K. Mogyorósi, R. Kun, J. Németh, and I. Dékány. "Preparation and photooxidation properties of metal oxide semiconductors incorporated in layer silicates." In From Colloids to Nanotechnology, 27–33. Berlin, Heidelberg: Springer Berlin Heidelberg, 2004. http://dx.doi.org/10.1007/978-3-540-45119-8_5.

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Krik, Soufiane, Andrea Gaiardo, Matteo Valt, Barbara Fabbri, Cesare Malagù, Giancarlo Pepponi, Davide Casotti, Giuseppe Cruciani, Vincenzo Guidi, and Pierluigi Bellutti. "Influence of Oxygen Vacancies in Gas Sensors Based on Metal-Oxide Semiconductors: A First-Principles Study." In Lecture Notes in Electrical Engineering, 309–14. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-37558-4_47.

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Ehara, Katsuo, and Renzo Hattori. "Pattern Analysis of Odors by Multiple Metal Oxide Semiconductors: Odor Analyzer with Human Sense of Smell." In Olfaction and Taste XI, 723. Tokyo: Springer Japan, 1994. http://dx.doi.org/10.1007/978-4-431-68355-1_287.

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Shijeesh, M. R., M. Jasna, and M. K. Jayaraj. "Metal-Oxide Transistors and Calculation of the Trap Density of States in the Band Gap of Semiconductors." In Materials Horizons: From Nature to Nanomaterials, 303–18. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-3314-3_10.

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Conference papers on the topic "Microprocessors Metal oxide semiconductors"

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Yee, Wai Mun, Mario Paniccia, Travis Eiles, and Valluri Rao. "Laser Voltage Probe (LVP): A Novel Optical Probing Technology for Flip-Chip Packaged Microprocessors." In ISTFA 2000. ASM International, 2000. http://dx.doi.org/10.31399/asm.cp.istfa2000p0003.

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Abstract A novel optical probing technique to measure voltage waveforms from flip-chip packaged complementary metal-oxide-semiconductor (CMOS) integrated circuits (IC) is described. This infrared (IR) laser based technique allows signal waveform acquisition and high frequency timing measurement directly from active PN junctions through the silicon backside substrate on IC’s mounted in flip-chip, stand-alone, or multi-chip module packages as well as wire-bond packages on which the chip backside is accessible. The technique significantly improves silicon debug & failure analysis (FA) through-put time (TPT) as compared to backside electron-beam (E-beam) probing because of the elimination of backside trenching and probe hole generation operations.
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Seo, Young-Ho, Seung-Woo Do, Yong-Hyun Lee, Jae-Sung Lee, Jisoon Ihm, and Hyeonsik Cheong. "Deuterium Process to Improve Gate Oxide Integrity in Metal-Oxide-Silicon (MOS) Structure." In PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors. AIP, 2011. http://dx.doi.org/10.1063/1.3666696.

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Lee, Dong Uk, Seon Pil Kim, Hyo Jun Lee, Dong Seok Han, Eun Kyu Kim, Hee-Wook You, Won-Ju Cho, Young-Ho Kim, Jisoon Ihm, and Hyeonsik Cheong. "Study on transparent and flexible memory with metal-oxide nanocrystals." In PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors. AIP, 2011. http://dx.doi.org/10.1063/1.3666652.

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Satsangi, Vibha R. "Metal oxide semiconductors in PEC splitting of water." In Solar Energy + Applications, edited by Jinghua Guo. SPIE, 2007. http://dx.doi.org/10.1117/12.734795.

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Balakumar, S., and R. Ajay Rakkesh. "Core/shell nano-structuring of metal oxide semiconductors and their photocatalytic studies." In SOLID STATE PHYSICS: PROCEEDINGS OF THE 57TH DAE SOLID STATE PHYSICS SYMPOSIUM 2012. AIP, 2013. http://dx.doi.org/10.1063/1.4790898.

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Ng, A., X. Liu, Y. C. Sun, A. B. Djurišić, A. M. C. Ng, and W. K. Chan. "Effect of electron collecting metal oxide layer in normal and inverted structure polymer solar cells." In THE PHYSICS OF SEMICONDUCTORS: Proceedings of the 31st International Conference on the Physics of Semiconductors (ICPS) 2012. AIP, 2013. http://dx.doi.org/10.1063/1.4848343.

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Zhang, Yuqing, Zhihe Xia, Jiapeng Li, Yang Shao, Sisi Wang, Lei Lu, Shengdong Zhang, Hoi-Sing Kwok, and Man Wong. "Systematic Defect Manipulation in Metal Oxide Semiconductors towards High-Performance Thin-Film Transistors." In 2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). IEEE, 2020. http://dx.doi.org/10.1109/edtm47692.2020.9117958.

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Osseily, Hassan Amine, and Ali Massoud Haidar. "Octal to binary conversion using multi-input floating gate complementary metal oxide semiconductors." In 2011 10th International Symposium on Signals, Circuits and Systems (ISSCS). IEEE, 2011. http://dx.doi.org/10.1109/isscs.2011.5978644.

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Zhang, Rui, Linsen Bie, Tze-Ching Fung, Eric Kai-Hsiang Yu, Chumin Zhao, and Jerzy Kanicki. "High performance amorphous metal-oxide semiconductors thin-film passive and active pixel sensors." In 2013 IEEE International Electron Devices Meeting (IEDM). IEEE, 2013. http://dx.doi.org/10.1109/iedm.2013.6724703.

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Osseily, Hassan Amine, and Ali Massoud Haidar. "Hexadecimal to binary conversion using multi-input floating gate complementary metal oxide semiconductors." In 2015 International Conference on Applied Research in Computer Science and Engineering (ICAR). IEEE, 2015. http://dx.doi.org/10.1109/arcse.2015.7338134.

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Reports on the topic "Microprocessors Metal oxide semiconductors"

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Bryant, R. E. Two Papers on a Symbolic Analyzer for MOS (Metal-Oxide Semiconductors) Circuits. Fort Belvoir, VA: Defense Technical Information Center, December 1987. http://dx.doi.org/10.21236/ada188617.

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Hane, G. J., M. Yorozu, T. Sogabe, and S. Suzuki. Long-term research in Japan: amorphous metals, metal oxide varistors, high-power semiconductors and superconducting generators. Office of Scientific and Technical Information (OSTI), April 1985. http://dx.doi.org/10.2172/5621417.

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