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Journal articles on the topic 'Microprocessors Metal oxide semiconductors'

Author: Grafiati

Published: 4 June 2021

Last updated: 4 February 2022

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1

Bernstein, Kerry. "Circuit Responses to Radiation-Induced Upsets." MRS Bulletin 28, no. 2 (February 2003): 126–30. http://dx.doi.org/10.1557/mrs2003.40.

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AbstractHistorically, radiation-induced corruption of data in high-speed complementary metal oxide semiconductor designs has been limited to on-board static random-access memory in various memory caches. Successive generations of scaling, however, have resulted in capacitance reductions in key logic circuits, increasing their vulnerability to these “soft errors.” Charge delivered by radiation events now carries a substantial probability of inducing upsets, not only in bistable elements, but in logic evaluation circuits as well. This article introduces the reader to common logic-circuit topologies in high-speed microprocessors, radiation circuit response mechanisms that can compromise logic evaluation integrity, and existing techniques that mitigate this exposure.

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2

Fitzgerald, E. A., and L. C. Kimerling. "Silicon-Based Microphotonics and Integrated Optoelectronics." MRS Bulletin 23, no. 4 (April 1998): 39–47. http://dx.doi.org/10.1557/s0883769400030256.

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The need for integrated optical interconnects in electronic systems is derivedfrom the cost and performance of electronic systems. If we examine the cost of all interconnects, it becomes apparent that there is an exponential growth in cost per interconnect with the length of the interconnect. A remarkable feature of interconnect cost is that the exponential relation holds over all length scales—from the shortest interconnects on a chip to the longest interconnects in global telecommunications networks. Longer interconnects are drastically more expensive, and these costs are ultimately related to the labor cost associated with each interconnect. Given this economic pressure, it is not surprising that there is a driving force to condense more functions locally on the same chip, board, or system. In condensing these functions, the number of long interconnects are decreased and the overall cost of the electronic system decreases dramatically. A specific glaring example of this driving force is Si complementary-metal-oxide-semiconductor (CMOS) technology, especially the case of microprocessors. In the Si microprocessor case, the flood gates to interconnect condensation were opened and the miraculous trend of lower cost for exponentially increasing performance was revealed.

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Packan, Paul A. "Scaling Transistors into the Deep-Submicron Regime." MRS Bulletin 25, no. 6 (June 2000): 18–21. http://dx.doi.org/10.1557/mrs2000.93.

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The dominant device used in the semiconductor industry today is the silicon-based metal oxide semiconductor (MOS) transistor. The MOS transistor consists of a source, drain, channel, and gate region fabricated in single-crystal silicon (Figure 1). The source region provides a supply of mobile charge when the device is turned “on.” The source is electrically isolated from the drain by the channel region, which is oppositely charged. An insulating oxide layer between the gate and the channel region forms a capacitor. During operation, a voltage is applied to the gate. By applying the appropriate voltage, a conductive layer of charge can be attracted in the channel region at the oxide/silicon interface. This layer of charge acts as a wire that effectively connects the source and drain regions. By changing the voltage on the gate, the conducting layer of charge can be removed. Thus the transistor acts like a switch, with the gate electrode controlling the connection from the source to the drain. These individual switches can be connected to form the basic building blocks for circuit design. These building blocks are used to create the high-performance microprocessors and memory chips in today's computers.

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Aseev, Aleksander Leonidovich, Alexander Vasilevich Latyshev, and Anatoliy Vasilevich Dvurechenskii. "Semiconductor Nanostructures for Modern Electronics." Solid State Phenomena 310 (September 2020): 65–80. http://dx.doi.org/10.4028/www.scientific.net/ssp.310.65.

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Modern electronics is based on semiconductor nanostructures in practically all main parts: from microprocessor circuits and memory elements to high frequency and light-emitting devices, sensors and photovoltaic cells. Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) with ultimately low gate length in the order of tens of nanometers and less is nowadays one of the basic elements of microprocessors and modern electron memory chips. Principally new physical peculiarities of semiconductor nanostructures are related to quantum effects like tunneling of charge carriers, controlled changing of energy band structure, quantization of energy spectrum of a charge carrier and a pronounced spin-related phenomena. Superposition of quantum states and formation of entangled states of photons offers new opportunities for the realization of quantum bits, development of nanoscale systems for quantum cryptography and quantum computing. Advanced growth techniques such as molecular beam epitaxy and chemical vapour epitaxy, atomic layer deposition as well as optical, electron and probe nanolithography for nanostructure fabrication have been widely used. Nanostructure characterization is performed using nanometer resolution tools including high-resolution, reflection and scanning electron microscopy as well as scanning tunneling and atomic force microscopy. Quantum properties of semiconductor nanostructures have been evaluated from precise electrical and optical measurements. Modern concepts of various semiconductor devices in electronics and photonics including single-photon emitters, memory elements, photodetectors and highly sensitive biosensors are developed very intensively. The perspectives of nanostructured materials for the creation of a new generation of universal memory and neuromorphic computing elements are under lively discussion. This paper is devoted to a brief description of current achievements in the investigation and modeling of single-electron and single-photon phenomena in semiconductor nanostructures, as well as in the fabrication of a new generation of elements for micro-, nano, optoelectronics and quantum devices.

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5

Nakada, Kazuki, Tetsuya Asai, and Yoshihito Amemiya. "Biologically-Inspired Locomotion Controller for a Quadruped Walking Robot: Analog IC Implementation of a CPG-Based Controller." Journal of Robotics and Mechatronics 16, no. 4 (August 20, 2004): 397–403. http://dx.doi.org/10.20965/jrm.2004.p0397.

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The present paper proposes analog integrated circuit (IC) implementation of a biologically inspired controller in quadruped robot locomotion. Our controller is based on the central pattern generator (CPG), which is known as the biological neural network that generates fundamental rhythmic movements in locomotion of animals. Many CPG-based controllers for robot locomotion have been proposed, but have mostly been implemented in software on digital microprocessors. Such a digital processor operates accurately, but it can only process sequentially. Thus, increasing the degree of freedom of physical parts of a robot deteriorates the performance of a CPG-based controller. We therefore implemented a CPG-based controller in an analog complementary metal-oxide-semiconductor (CMOS) circuit that processes in parallel essentially, making it suitable for real-time locomotion control in a multi-legged robot. Using the simulation program with integrated circuit emphasis (SPICE), we show that our controller generates stable rhythmic patterns for locomotion control in a quadruped walking robot, and change its rhythmic patterns promptly.

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6

Eaglesham, David J. "What We Still Don't Know About Silicon." MRS Bulletin 19, no. 12 (December 1994): 57–60. http://dx.doi.org/10.1557/s0883769400048739.

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A question sometimes posed to researchers in silicon is: Why are you still working on silicon? How much more do we need to learn? Not only is Si a relatively simple element, it is one of the most common in the earth's crust. This element has been very extensively studied. One reason we keep studying silicon is because it is not just an element, it is also an industry. The microelectronics business has a massive economic impact on our lives. From cars to washing machines, almost all consumer goods contain silicon microprocessors in some form. Our daily lives depend on the stuff. Figure 1 shows the predominance of Si in a breakdown of the microelectronics industry. In 1994 microelectronics has been a $1 × 1011-per year industry worldwide, and it is still growing rapidly. CMOS, or complementary metal-oxide-semiconductor transistors, dominate this business, some being bipolar. The entire compound semiconductor industry is a small part of this picture, composing 2% of the business (although $2 billion is not bad for a “niche” market). The $100 billion business built around silicon makes it the most important element in world economics, although there is some evidence that C and O may also be important for the support of our daily lives. One thing, however, is clear-the economic need to understand silicon and everything it does is tremendous.

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7

Kushwah, Preeti, Saurabh Khandelwal, and Shyam Akashe. "Multi-Threshold Voltage CMOS Design for Low-Power Half Adder Circuit." International Journal of Nanoscience 14, no. 05n06 (October 2015): 1550022. http://dx.doi.org/10.1142/s0219581x15500222.

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The new era of portable electronic devices demands lesser power dissipation for longer battery life and design compactability. Leakage current and leakage power are dominating factors which greatly affect the power consumption in low voltage and low power applications. For many numerical representations of binary numbers, combinational circuits like adder, encoder, multiplexer, etc. are useful circuits for arithmetic operation. A novel high speed and low power half adder cell is introduced here which consists of AND gate and OR gate. This cell shows high speed, lower power consumption than conventional half adder. In CMOS technology, transistors used have small area and low power consumption. It is used in various applications like adder, subtract or, multiplexer, ALU and microprocessors digital VLSI systems. As the scaling technology reduces, the leakage power increases. In this paper, multi threshold complementary metal oxide semiconductor (MTCMOS) technique is proposed to reduce the leakage current and leakage power. MTCMOS is an effective circuit level technique that increases the performance of a cell by using both low- and high-threshold voltage transistors. Leakage current is reduced by 85.37% and leakage power is reduced by 87.45% using MTCMOS technique as compared to standard CMOS technique. The half adder design simulation work was performed by cadence simulation tool at 45-nm technology.

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8

John, Vimukth, Shylu Sam, S. Radha, P. Sam Paul, and Joel Samuel. "Design of a power-efficient Kogge–Stone adder by exploring new OR gate in 45nm CMOS process." Circuit World 46, no. 4 (March 23, 2020): 257–69. http://dx.doi.org/10.1108/cw-12-2018-0104.

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Purpose The purpose of this work is to reduce the power consumption of KSA and to improve the PDP for data path applications. In digital Very Large – Scale Integration systems, the addition of two numbers is one of the essential functions. This arithmetic function is used in the modern digital signal processors and microprocessors. The operating speed of these processors depends on the computation of the arithmetic function. The speed computation block for most of the datapath elements was adders. In this paper, the Kogge–Stone adder (KSA) is designed using XOR, AND and proposed OR gates. The proposed OR gate has less power consumption due to the less number of transistors. In arithmetic logic circuit power, delay and power delay products (PDP) are considered as the important parameters. The delays reported for the proposed OR gate are less when compared with the conventional Complementary Metal Oxide Semiconductor (CMOS) OR gate and pre-existing logic styles. The proposed circuits are optimized in terms of power, delay and PDP. To analyze the performance of KSA, extensive Cadence Virtuoso simulations are used. From the simulation results based on 45 nm CMOS process, it was observed that the proposed design has obtained 688.3 nW of power consumption, 0.81 ns of delay and 0.55 fJ of PDP at 1.1 V. Design/methodology/approach In this paper, a new circuit for OR gate is proposed. The KSA is designed using XOR, AND and proposed OR gates. Findings The proposed OR gate has less power consumption due to the less number of transistors. The delays reported for the proposed OR gate are less when compared with the conventional CMOS OR gate and pre-existing logic styles. The proposed circuits are optimized in terms of power, delay and PDP. Originality/value In arithmetic logic circuit power, delay and PDP are considered as the important parameters. In this paper, a new circuit for OR gate is proposed. The power consumption of the designed KSA using the proposed OR gate is very less when compared with the conventional KSA. Simulation results show that the performance of the proposed KSA are improved and suitable for high speed applications.

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9

Adhikari, Sangeeta, and Debasish Sarkar. "Metal oxide semiconductors for dye degradation." Materials Research Bulletin 72 (December 2015): 220–28. http://dx.doi.org/10.1016/j.materresbull.2015.08.009.

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10

Kiriakidis, George, and Vassilios Binas. "Metal oxide semiconductors as visible light photocatalysts." Journal of the Korean Physical Society 65, no. 3 (August 2014): 297–302. http://dx.doi.org/10.3938/jkps.65.297.

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11

Toriumi, Akira. "0.1μm complementary metal–oxide–semiconductors and beyond." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 14, no. 6 (November 1996): 4020. http://dx.doi.org/10.1116/1.588635.

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12

Saha, H., and C. Chaudhuri. "Complementary Metal Oxide Semiconductors Microelectromechanical Systems Integration." Defence Science Journal 59, no. 6 (November 24, 2009): 557–67. http://dx.doi.org/10.14429/dsj.59.1560.

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13

Anta, Juan A. "Electron transport in nanostructured metal-oxide semiconductors." Current Opinion in Colloid & Interface Science 17, no. 3 (June 2012): 124–31. http://dx.doi.org/10.1016/j.cocis.2012.02.003.

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14

Tutov, E. A., S. V. Ryabtsev, E. E. Tutov, and E. N. Bormontov. "Silicon MOS structures with nonstoichiometric metal-oxide semiconductors." Technical Physics 51, no. 12 (December 2006): 1604–7. http://dx.doi.org/10.1134/s1063784206120097.

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15

CAROTTA, M., V. GUIDI, G. MARTINELLI, M. NAGLIATI, D. PUZZOVIO, and D. VECCHI. "Sensing of volatile alkanes by metal-oxide semiconductors." Sensors and Actuators B: Chemical 130, no. 1 (March 14, 2008): 497–501. http://dx.doi.org/10.1016/j.snb.2007.09.053.

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16

Hossein-Babaei, Faramarz, Saeed Masoumi, and Amirreza Noori. "Seebeck voltage measurement in undoped metal oxide semiconductors." Measurement Science and Technology 28, no. 11 (October 12, 2017): 115002. http://dx.doi.org/10.1088/1361-6501/aa82a4.

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17

Hamers, Robert J., Scott A. Chambers, Paul E. Evans, Ryan Franking, Zachary Gerbec, Padma Gopalan, Heesuk Kim, et al. "Molecular and biomolecular interfaces to metal oxide semiconductors." physica status solidi (c) 7, no. 2 (February 2010): 200–205. http://dx.doi.org/10.1002/pssc.200982472.

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18

Zhou, Xinran, Xiaowei Cheng, Yongheng Zhu, Ahmed A. Elzatahry, Abdulaziz Alghamdi, Yonghui Deng, and Dongyuan Zhao. "Ordered porous metal oxide semiconductors for gas sensing." Chinese Chemical Letters 29, no. 3 (March 2018): 405–16. http://dx.doi.org/10.1016/j.cclet.2017.06.021.

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19

Pandit, Bhishma, and Jaehee Cho. "AlGaN Ultraviolet Metal–Semiconductor–Metal Photodetectors with Reduced Graphene Oxide Contacts." Applied Sciences 8, no. 11 (November 1, 2018): 2098. http://dx.doi.org/10.3390/app8112098.

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AlGaN semiconductors are promising materials in the field of ultraviolet (UV) detection. We fabricated AlGaN/GaN UV metal–semiconductor–metal (MSM) photodiodes with two back-to-back interdigitated finger electrodes comprising reduced graphene oxide (rGO). The rGO showed high transparency below the wavelength of 380 nm, which is necessary for a visible-blind photodetector, and showed outstanding Schottky behavior on AlGaN. As the photocurrent, dark current, photoresponsivity, detectivity, and cut-off wavelength were investigated with the rGO/AlGaN MSM photodiodes with various Al mole fractions, systematic variations in the device characteristics with the Al mole fraction were confirmed, proving the potential utility of the device architecture combining two-dimensional materials, rGO, and nitride semiconductors.

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20

Wang, Yucheng, Yuming Zhang, Tiqiang Pang, Jie Xu, Ziyang Hu, Yuejin Zhu, Xiaoyan Tang, Suzhen Luan, and Renxu Jia. "Ionic behavior of organic–inorganic metal halide perovskite based metal-oxide-semiconductor capacitors." Physical Chemistry Chemical Physics 19, no. 20 (2017): 13002–9. http://dx.doi.org/10.1039/c7cp01799e.

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21

Biswas, Somnath, Jakub Husek, Stephen Londo, and L. Robert Baker. "Highly Localized Charge Transfer Excitons in Metal Oxide Semiconductors." Nano Letters 18, no. 2 (January 30, 2018): 1228–33. http://dx.doi.org/10.1021/acs.nanolett.7b04818.

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22

Rim, You Seung, Huajun Chen, Bowen Zhu, Sang-Hoon Bae, Shuanglin Zhu, Philip Jwo Li, Isaac Caleb Wang, and Yang Yang. "Interface Engineering of Metal Oxide Semiconductors for Biosensing Applications." Advanced Materials Interfaces 4, no. 10 (February 27, 2017): 1700020. http://dx.doi.org/10.1002/admi.201700020.

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23

Xu, Kang, Yi Wang, Yuda Zhao, and Yang Chai. "Modulation doping of transition metal dichalcogenide/oxide heterostructures." Journal of Materials Chemistry C 5, no. 2 (2017): 376–81. http://dx.doi.org/10.1039/c6tc04640a.

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24

Ohkubo, S., Y. Ashida, T. Utsumi, K. Hongo, and G. Nogami. "The Role of Metal Hydrides in Electrode Reactions on Metal Oxide Semiconductors." Journal of The Electrochemical Society 143, no. 10 (October 1, 1996): 3273–78. http://dx.doi.org/10.1149/1.1837197.

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25

Wickramasinghe, Thushan E., Gregory Jensen, Ruhi Thorat, Miles Lindquist, Shrouq H. Aleithan, and Eric Stinaff. "Complementary growth of 2D transition metal dichalcogenide semiconductors on metal oxide interfaces." Applied Physics Letters 117, no. 21 (November 23, 2020): 213104. http://dx.doi.org/10.1063/5.0027225.

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26

Chen, Y. L., G. L. Liou, H. H. Hsu, P. C. Chen, Z. W. Zheng, Y. H. Wu, C. H. Cheng, C. H. Liu, and L. H. Chung. "Low-Voltage Metal-Oxide Thin Film Transistors Using P-Type Tin-Oxide Semiconductors." Journal of Nanoscience and Nanotechnology 19, no. 9 (September 1, 2019): 5619–23. http://dx.doi.org/10.1166/jnn.2019.16563.

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27

Chen, Huajun, You Seung Rim, Isaac Caleb Wang, Chao Li, Bowen Zhu, Mo Sun, Mark S. Goorsky, Ximin He, and Yang Yang. "Quasi-Two-Dimensional Metal Oxide Semiconductors Based Ultrasensitive Potentiometric Biosensors." ACS Nano 11, no. 5 (April 26, 2017): 4710–18. http://dx.doi.org/10.1021/acsnano.7b00628.

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28

Braginsky, L. "Light absorption at the interface of transition-metal oxide semiconductors." Solar Energy Materials and Solar Cells 64, no. 1 (September 1, 2000): 15–27. http://dx.doi.org/10.1016/s0927-0248(00)00038-6.

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29

Srivastava, S. K., P. Magudapathy, P. Gangopadhyay, S. Amirthapandian, Santanu Bera, and A. Das. "Ag nanoparticles in compound metal oxide semiconductors: Syntheses and characterizations." Thin Solid Films 681 (July 2019): 86–92. http://dx.doi.org/10.1016/j.tsf.2019.04.039.

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30

Thomas, Stuart R., Pichaya Pattanasattayavong, and Thomas D. Anthopoulos. "Solution-processable metal oxide semiconductors for thin-film transistor applications." Chemical Society Reviews 42, no. 16 (2013): 6910. http://dx.doi.org/10.1039/c3cs35402d.

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31

Janesick, James. "Lux transfer: Complementary metal oxide semiconductors versus charge-coupled devices." Optical Engineering 41, no. 6 (June 1, 2002): 1203. http://dx.doi.org/10.1117/1.1476692.

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32

Ji, Haocheng, Wen Zeng, and Yanqiong Li. "Gas sensing mechanisms of metal oxide semiconductors: a focus review." Nanoscale 11, no. 47 (2019): 22664–84. http://dx.doi.org/10.1039/c9nr07699a.

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This review organizes and introduces several common gas sensing mechanisms of metal oxide semiconductors in detail and classifies them into two categories. The scope and relationship of these mechanisms are clarified.

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Ho, Dongil, Hyewon Jeong, Sunwoo Choi, and Choongik Kim. "Organic materials as a passivation layer for metal oxide semiconductors." Journal of Materials Chemistry C 8, no. 43 (2020): 14983–95. http://dx.doi.org/10.1039/d0tc02379e.

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34

Kim, Hojoong, and Jang-Yeon Kwon. "Enzyme immobilization on metal oxide semiconductors exploiting amine functionalized layer." RSC Advances 7, no. 32 (2017): 19656–61. http://dx.doi.org/10.1039/c7ra01615h.

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35

Riente, Paola, and Timothy Noël. "Application of metal oxide semiconductors in light-driven organic transformations." Catalysis Science & Technology 9, no. 19 (2019): 5186–232. http://dx.doi.org/10.1039/c9cy01170f.

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36

Srivastava, Juhi, Suhas Nahas, Somnath Bhowmick, and Anshu Gaur. "Electronic structure and transport in amorphous metal oxide and amorphous metal oxynitride semiconductors." Journal of Applied Physics 126, no. 12 (September 28, 2019): 125702. http://dx.doi.org/10.1063/1.5096042.

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37

Constantinoiu, Izabela, and Cristian Viespe. "ZnO Metal Oxide Semiconductor in Surface Acoustic Wave Sensors: A Review." Sensors 20, no. 18 (September 8, 2020): 5118. http://dx.doi.org/10.3390/s20185118.

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Surface acoustic wave (SAW) gas sensors are of continuous development interest to researchers due to their sensitivity, short detection time, and reliability. Among the most used materials to achieve the sensitive film of SAW sensors are metal oxide semiconductors, which are highlighted by thermal and chemical stability, by the presence on their surface of free electrons and also by the possibility of being used in different morphologies. For different types of gases, certain metal oxide semiconductors are used, and ZnO is an important representative for this category of materials in the field of sensors. Having a great potential for the development of SAW sensors, the discussion related to the development of the sensitivity of metal oxide semiconductors, especially ZnO, by the synthesis method or by obtaining new materials, is suitable and necessary to have an overview of the latest results in this domain.

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38

Balasubramanian, Padmanabhan, Douglas Maskell, and Nikos Mastorakis. "Low Power Robust Early Output Asynchronous Block Carry Lookahead Adder with Redundant Carry Logic." Electronics 7, no. 10 (October 9, 2018): 243. http://dx.doi.org/10.3390/electronics7100243.

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Adder is an important datapath unit of a general-purpose microprocessor or a digital signal processor. In the nanoelectronics era, the design of an adder that is modular and which can withstand variations in process, voltage and temperature are of interest. In this context, this article presents a new robust early output asynchronous block carry lookahead adder (BCLA) with redundant carry logic (BCLARC) that has a reduced power-cycle time product (PCTP) and is a low power design. The proposed asynchronous BCLARC is implemented using the delay-insensitive dual-rail code and adheres to the 4-phase return-to-zero (RTZ) and the 4-phase return-to-one (RTO) handshaking. Many existing asynchronous ripple-carry adders (RCAs), carry lookahead adders (CLAs) and carry select adders (CSLAs) were implemented alongside to perform a comparison based on a 32/28 nm complementary metal-oxide-semiconductor (CMOS) technology. The 32-bit addition was considered for an example. For implementation using the delay-insensitive dual-rail code and subject to the 4-phase RTZ handshaking (4-phase RTO handshaking), the proposed BCLARC which is robust and of early output type achieves: (i) 8% (5.7%) reduction in PCTP compared to the optimum RCA, (ii) 14.9% (15.5%) reduction in PCTP compared to the optimum BCLARC, and (iii) 26% (25.5%) reduction in PCTP compared to the optimum CSLA.

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Park, Byungkyu, Dongil Ho, Guhyun Kwon, Dojeon Kim, Sung Yong Seo, Choongik Kim, and Myung-Gil Kim. "Metal Oxide Semiconductors: Solution-Processed Rad-Hard Amorphous Metal-Oxide Thin-Film Transistors (Adv. Funct. Mater. 47/2018)." Advanced Functional Materials 28, no. 47 (November 2018): 1870333. http://dx.doi.org/10.1002/adfm.201870333.

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40

Shin, Jae Cheol, Sung Min Kwon, Jingu Kang, Seong Pil Jeon, Jae-Sang Heo, Yong-Hoon Kim, Sung Woon Cho, and Sung Kyu Park. "Catalytic Metal-Accelerated Crystallization of High-Performance Solution-Processed Earth-Abundant Metal Oxide Semiconductors." ACS Applied Materials & Interfaces 12, no. 22 (May 12, 2020): 25000–25010. http://dx.doi.org/10.1021/acsami.0c04401.

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41

Xie, Liyan, Qing Zhu, Guozhen Zhang, Ke Ye, Chongwen Zou, Oleg V. Prezhdo, Zhaowu Wang, Yi Luo, and Jun Jiang. "Tunable Hydrogen Doping of Metal Oxide Semiconductors with Acid–Metal Treatment at Ambient Conditions." Journal of the American Chemical Society 142, no. 9 (February 21, 2020): 4136–40. http://dx.doi.org/10.1021/jacs.0c00561.

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42

Deguchi, Seiichi, Hitoki Matsuda, Masanobu Hasatani, and Noriyuki Kobayashi. "Preparation of Fine Particles of Metal-Metal Oxide Semiconductors by the Spray Pyrolysis Method." KAGAKU KOGAKU RONBUNSHU 20, no. 4 (1994): 529–34. http://dx.doi.org/10.1252/kakoronbunshu.20.529.

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Zainabidinov, S., S. I. Rembeza, E. S. Rembeza, and Sh Kh Yulchiev. "Prospects for the use of metal-oxide semiconductors in energy converters." Applied Solar Energy 55, no. 1 (January 2019): 5–7. http://dx.doi.org/10.3103/s0003701x19010146.

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44

Na, Jae Won, Hee Jun Kim, Seonghwan Hong, and Hyun Jae Kim. "Plasma Polymerization Enabled Polymer/Metal–Oxide Hybrid Semiconductors for Wearable Electronics." ACS Applied Materials & Interfaces 10, no. 43 (October 11, 2018): 37207–15. http://dx.doi.org/10.1021/acsami.8b11094.

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Sayama, Kazuhiro, Takashi Oi, Ryu Abe, Masatoshi Yanagida, Hideki Sugihara, and Yasukazu Iwasaki. "Photo-electrochemical properties of oxide semiconductors on porous titanium metal electrodes." Solar Energy Materials and Solar Cells 90, no. 15 (September 2006): 2429–37. http://dx.doi.org/10.1016/j.solmat.2006.03.028.

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46

Concina, Isabella, and Alberto Vomiero. "Metal Oxide Semiconductors for Dye- and Quantum-Dot-Sensitized Solar Cells." Small 11, no. 15 (December 18, 2014): 1744–74. http://dx.doi.org/10.1002/smll.201402334.

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Malagù, C., G. Martinelli, M. A. Ponce, and C. M. Aldao. "Unpinning of the Fermi level and tunneling in metal oxide semiconductors." Applied Physics Letters 92, no. 16 (April 21, 2008): 162104. http://dx.doi.org/10.1063/1.2916709.

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Li, Haoyuan, Lian Duan, and Yong Qiu. "Mechanisms of Charge Transport in Transition Metal Oxide Doped Organic Semiconductors." Journal of Physical Chemistry C 118, no. 51 (December 10, 2014): 29636–42. http://dx.doi.org/10.1021/jp510575q.

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Mahajan, Sunil, and Shweta Jagtap. "Metal-oxide semiconductors for carbon monoxide (CO) gas sensing: A review." Applied Materials Today 18 (March 2020): 100483. http://dx.doi.org/10.1016/j.apmt.2019.100483.

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Wada, Kenji, Kiyomi Yoshida, Tsuyoshi Takatani, and Yoshihisa Watanabe. "Selective photo-oxidation of light alkanes using solid metal oxide semiconductors." Applied Catalysis A: General 99, no. 1 (June 1993): 21–36. http://dx.doi.org/10.1016/0926-860x(93)85037-p.

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