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Journal articles on the topic 'Microwave integrated circuits Microwaves'

Author: Grafiati

Published: 4 June 2021

Last updated: 1 February 2022

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1

Malecha, Karol, Jan Macioszczyk, Piotr Slobodzian, and Jacek Sobkow. "Application of microwave heating in ceramic-based microfluidic module." Microelectronics International 35, no. 3 (July 2, 2018): 126–32. http://dx.doi.org/10.1108/mi-11-2017-0062.

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Purpose This paper aims to focus on the application of low temperature co-fired ceramic (LTCC) technology in the fabrication of a microfluidic module with integrated microwave components. The design, technology and performance of such an LTCC-based module is investigated. The rapid heating of liquid samples on a microliter scale is shown to be possible with the use of microwaves. Design/methodology/approach The developed microwave-microfluidic module was fabricated using well-known LTCC technology. The finite element method was used to design the geometry of the microwave circuit. Various numerical simulations for different liquids were performed. Finally, the performance of the real LTCC-based microwave-microfluidic module was examined experimentally. Findings LTCC materials and technology can be used in the fabrication of microfluidic modules which use microwaves in the heating of the liquid sample. LTCC technology permits the fabrication of matching circuits with appropriate geometry, whereas microwave power can be used to heat up the liquid samples on a microliter scale. Research limitations/implications The main limitation of the presented work is found to be in conjunction with LTCC technology. The dimensions and shape of the deposited conductors (e.g. microstrip line, matching circuit) depend on the screen-printing process. A line with resolution lower than 75 µm with well-defined edges is difficult to obtain. This can have an effect on the high-frequency properties of the LTCC modules. Practical implications The presented LTCC-based microfluidic module with integrated microwave circuits provides an opportunity for the further development of various micro-total analysis systems or lab-on-chips in which the rapid heating of liquid samples in low volumes is needed (e.g. miniature real-time polymerase chain reaction thermocycler). Originality/value Examples of the application of LTCC technology in the fabrication of microwave circuits and microfluidic systems can be found in the available literature. However, the LTCC-based module which combines microwave and microfluidic components has yet to have been reported. The preliminary work on the design, fabrication and properties of the LTCC microfluidic module with integrated microwave components is presented in this paper.

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2

Vardaxoglou, J. C. "Microwave integrated circuits." Microprocessors and Microsystems 20, no. 3 (May 1996): 197. http://dx.doi.org/10.1016/0141-9331(95)01064-5.

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3

Free, C. E. "Microwave integrated circuits." Microelectronics Journal 24, no. 1-2 (January 1993): 158–59. http://dx.doi.org/10.1016/0026-2692(93)90112-r.

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4

BAHL, INDER J. "MONOLITHIC MICROWAVE INTEGRATED CIRCUITS BASED ON GaAs MESFET TECHNOLOGY." International Journal of High Speed Electronics and Systems 06, no. 01 (March 1995): 91–124. http://dx.doi.org/10.1142/s0129156495000031.

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Advanced military microwave systems are demanding increased integration, reliability, radiation hardness, compact size and lower cost when produced in large volume, whereas the microwave commercial market, including wireless communications, mandates low cost circuits. Monolithic Microwave Integrated Circuit (MMIC) technology provides an economically viable approach to meeting these needs. In this paper the design considerations for several types of MMICs and their performance status are presented. Multi-function integrated circuits that advance the MMIC technology are described, including integrated microwave/digital functions and a highly integrated transceiver at C-band.

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5

Wilson, K. "GaAs monolithic microwave integrated circuits." Electronics and Power 33, no. 4 (1987): 249. http://dx.doi.org/10.1049/ep.1987.0164.

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6

Minnis, B. J. "A Printed Circuit Stub Tuner for Microwave Integrated Circuits." IEEE Transactions on Microwave Theory and Techniques 35, no. 3 (March 1987): 346–49. http://dx.doi.org/10.1109/tmtt.1987.1133649.

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7

Hao, Z. C., W. Hong, J. X. Chen, X. P. Chen, and K. Wu. "Planar diplexer for microwave integrated circuits." IEE Proceedings - Microwaves, Antennas and Propagation 152, no. 6 (2005): 455. http://dx.doi.org/10.1049/ip-map:20050014.

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8

Niehenke, E. C., R. A. Pucel, and I. J. Bahl. "Microwave and millimeter-wave integrated circuits." IEEE Transactions on Microwave Theory and Techniques 50, no. 3 (March 2002): 846–57. http://dx.doi.org/10.1109/22.989968.

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9

Bayraktaroglu, B. "GaAs HBT's for microwave integrated circuits." Proceedings of the IEEE 81, no. 12 (1993): 1762–85. http://dx.doi.org/10.1109/5.248963.

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10

Shepherd, P. R., P. S. A. Evans, B. J. Ramsey, and D. J. Harrison. "Lithographic technology for microwave integrated circuits." Electronics Letters 33, no. 6 (1997): 483. http://dx.doi.org/10.1049/el:19970360.

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11

Christie, I. R., and W. Mazur. "Electroplated gold in microwave integrated circuits." Gold Bulletin 19, no. 2 (June 1986): 40–45. http://dx.doi.org/10.1007/bf03214642.

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12

Lahbib, Imene, Mohamed Aziz Doukkali, Philippe Descamps, Patrice Gamand, Christophe Kelma, and Olivier Tesson. "Design and characterization of an integrated microwave generator for BIST applications." International Journal of Microwave and Wireless Technologies 6, no. 2 (February 27, 2014): 195–200. http://dx.doi.org/10.1017/s1759078714000105.

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This paper presents a circuit architecture for a new integrated on chip test method for microwave circuits. The proposed built-in-self-test (BIST) cell targets a direct low-cost measurement technique of the gain and the 1 dB input compression point (CP1) of a K-band satellite receiver in the 18–22 GHz frequency bandwidth. A signal generator at the radiofrequency (RF) front end input of the device under test (DUT) has been integrated on the same chip. To inject this RF signal, a loopback technique has been used and the design has been accommodated for it. This paper focuses on the design of the most sensitive block of the BIST circuit, i.e. the RF signal generator. This circuit, fabricated in a SIGe:C BiCMOS process, consumes 10 mA. It presents a dynamic power range of 17 dB (−41; −24 dBm) and operates in a frequency range of 5.6 GHz (17.5; 23 GHz). This BIST circuit gives new perspectives in terms of test strategy, cost reduction, and measurement accuracy for microwave-integrated circuits and could be adapted for mm-wave circuits.

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13

Gaudreault, M., and M. G. Stubbs. "Lumped-element components for GaAs monolithic microwave integrated circuits." Canadian Journal of Physics 63, no. 6 (June 1, 1985): 736–39. http://dx.doi.org/10.1139/p85-117.

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Gallium-arsenide monolithic microwave integrated circuits (GaAs MMIC's) promise the microwave circuit designer significant size, weight, and reliability advantages. Distributed and lumped matching techniques have been utilized previously in MMIC design with the latter offering greater bandwidth and smaller size. In this paper, experimental results for lumped interdigitated capacitors on a gallium-arsenide substrate are presented. Computer modelling in the frequency range 2–18 GHz was used to derive a set of design curves for these capacitors. These curves cover aspect ratios of w/s = 1 and w/s = 2.5. Experimental results obtained by using these curves to design lumped-element monolithic filters show excellent agreement with theory.

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14

Lucyszyn, S., A. H. Aghvami, I. D. Robertson, and C. Stewart. "Measurement techniques for monolithic microwave integrated circuits." Electronics & Communication Engineering Journal 6, no. 2 (April 1, 1994): 69–76. http://dx.doi.org/10.1049/ecej:19940204.

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15

Gillick, M., A. H. Aghvami, and I. D. Robertson. "Uniplanar techniques for monolithic microwave integrated circuits." Electronics & Communication Engineering Journal 6, no. 4 (August 1, 1994): 187–94. http://dx.doi.org/10.1049/ecej:19940402.

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16

Hollmann, E. K., O. G. Vendik, A. G. Zaitsev, and B. T. Melekh. "Substrates for high-Tcsuperconductor microwave integrated circuits." Superconductor Science and Technology 7, no. 9 (September 1, 1994): 609–22. http://dx.doi.org/10.1088/0953-2048/7/9/001.

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17

Pucel, Robert. "Looking Back at Monolithic Microwave Integrated Circuits." IEEE Microwave Magazine 13, no. 4 (May 2012): 62–76. http://dx.doi.org/10.1109/mmm.2012.2189032.

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18

Perko, RichardJ, and Alejandro Chu. "4737236 Method of making microwave integrated circuits." Microelectronics Reliability 29, no. 2 (January 1989): 289. http://dx.doi.org/10.1016/0026-2714(89)90590-8.

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19

Punati, Mounika, and R. Yuvaraj. "Substrate integrated circuits for high frequency of opto electronics." International Journal of Reconfigurable and Embedded Systems (IJRES) 9, no. 3 (November 1, 2020): 224. http://dx.doi.org/10.11591/ijres.v9.i3.pp224-228.

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Another age of high-recurrence coordinated circuits is displayed, which is called substrate incorporated circuits (SICS). Current cutting edge of circuit plan and implementation stages dependent on this new idea are assessed and dis-cussed in delail. Various potential outcomes and various favorable circumstances of the SICS are appeared for microwave, millimeter-wave and opto hardware applications. Down to earth models are delineated with hypothetical and trial results for substrate coordinated waveguide (SIW), substrate incorporated chunk waveguide (SISW) and substrate incorporated non-transmitting dielectric (SI") direct circuits. Future innovative work patterns are likewise dis-cussed regarding ease imaginative plan of millimeter-wave and optoelectronic coordinated circuits.

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20

Dindo, S., R. North, and D. Madge. "A manufacturing process for gallium arsenide monolithic microwave integrated circuits." Canadian Journal of Physics 65, no. 8 (August 1, 1987): 885–91. http://dx.doi.org/10.1139/p87-138.

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Over the last several years, Optotek has successfully developed the capability to design and process high-frequency x-band monolithic microwave integrated circuits. A process for fabricating active devices and passive elements is described. In addition, dc and microwave measurements are presented.

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21

Osipov, V. P., and O. S. Orlov. "The Monolithic Integrated Microwave Circuits, Components and Devices." Telecommunications and Radio Engineering 56, no. 10 (2001): 11. http://dx.doi.org/10.1615/telecomradeng.v56.i10.30.

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22

Mohammadi, Farah A., and Mustapha C. E. Yagoub. "ELECTROMAGNETIC MODEL FOR MICROWAVE COMPONENTS OF INTEGRATED CIRCUITS." Progress In Electromagnetics Research B 1 (2008): 81–94. http://dx.doi.org/10.2528/pierb07101802.

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23

Temnov, A. M. "Hybrid Monolithic Microwave Integrated Circuits RF on Diamond." Nano- i Mikrosistemnaya Tehnika 22, no. 6 (June 26, 2020): 298–328. http://dx.doi.org/10.17587/nmst.22.298-328.

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24

Mezzanotte, P., M. Mongiardo, L. Roselli, R. Sorrentino, and W. Heinrich. "Analysis of packaged microwave integrated circuits by FDTD." IEEE Transactions on Microwave Theory and Techniques 42, no. 9 (1994): 1796–801. http://dx.doi.org/10.1109/22.310590.

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25

Urick, Vincent J., Matthew J. Mondich, Christopher E. Sunderman, Dmitry A. Kozak, Peter G. Goetz, William S. Rabinovich, Marcel W. Pruessner, Rita Mahon, and Keith J. Williams. "Microwave Phase Shifting Using Coherent Photonic Integrated Circuits." IEEE Journal of Selected Topics in Quantum Electronics 22, no. 6 (November 2016): 353–60. http://dx.doi.org/10.1109/jstqe.2016.2573589.

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26

Herrault, Florian, Joel C. Wong, Dean Regan, David F. Brown, Helen Fung, Yan Tang, and Hasan Sharifi. "Metal-Embedded Chiplet Assembly for Microwave Integrated Circuits." IEEE Transactions on Components, Packaging and Manufacturing Technology 10, no. 9 (September 2020): 1579–82. http://dx.doi.org/10.1109/tcpmt.2020.3012505.

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27

Jansen, R. H. "The Spectral-Domain Approach for Microwave Integrated Circuits." IEEE Transactions on Microwave Theory and Techniques 33, no. 10 (October 1985): 1043–56. http://dx.doi.org/10.1109/tmtt.1985.1133168.

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28

Schloemann, E. F. "Circulators for microwave and millimeter-wave integrated circuits." Proceedings of the IEEE 76, no. 2 (1988): 188–200. http://dx.doi.org/10.1109/5.4394.

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29

Yeh, Chao-Hui, Yi-Wei Lain, Yu-Chiao Chiu, Chen-Hung Liao, David Ricardo Moyano, Shawn S. H. Hsu, and Po-Wen Chiu. "Gigahertz Flexible Graphene Transistors for Microwave Integrated Circuits." ACS Nano 8, no. 8 (July 29, 2014): 7663–70. http://dx.doi.org/10.1021/nn5036087.

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30

Roychoudhury, I., and D. Bhattacharya. "Coplanar Waveguide for Microwave Integrated Circuits: A Review." IETE Technical Review 10, no. 3 (May 1993): 257–65. http://dx.doi.org/10.1080/02564602.1993.11437334.

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31

Szczepański, Zbigniew. "Miniature Thick Film Resistors for Microwave Integrated Circuits." Active and Passive Electronic Components 14, no. 3 (1991): 119–27. http://dx.doi.org/10.1155/1991/43261.

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In this paper the results of miniature thick film resistors designed as add-on lumped resistors are presented. A few resistor configurations have been elaborated and tested, and a specific trimming resistance, which avoids parasitic trimming inductance was used. Some of the designed resistors were used in isolators and directional couplers for the 2-11 GHz band. The electrical parameters have been presented and discussed. The assembly methods for these resistors to the microstrip lines have also been given.

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32

McGrath, Finbarr J., and Patrick J. Murphy. "A Cad Package for Microwave Integrated Circuit Design." International Journal of Electrical Engineering & Education 24, no. 4 (October 1987): 319–24. http://dx.doi.org/10.1177/002072098702400405.

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A comprehensive CAD package for analysis and design of microwave microstrip circuits is described. The package which is written in FORTRAN has a comprehensive element library and a range of graphical output options.

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33

Soref, Richard. "Reconfigurable Integrated Optoelectronics." Advances in OptoElectronics 2011 (May 4, 2011): 1–15. http://dx.doi.org/10.1155/2011/627802.

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Integrated optics today is based upon chips of Si and InP. The future of this chip industry is probably contained in the thrust towards optoelectronic integrated circuits (OEICs) and photonic integrated circuits (PICs) manufactured in a high-volume foundry. We believe that reconfigurable OEICs and PICs, known as ROEICs and RPICs, constitute the ultimate embodiment of integrated photonics. This paper shows that any ROEIC-on-a-chip can be decomposed into photonic modules, some of them fixed and some of them changeable in function. Reconfiguration is provided by electrical control signals to the electro-optical building blocks. We illustrate these modules in detail and discuss 3D ROEIC chips for the highest-performance signal processing. We present examples of our module theory for RPIC optical lattice filters already constructed, and we propose new ROEICs for directed optical logic, large-scale matrix switching, and 2D beamsteering of a phased-array microwave antenna. In general, large-scale-integrated ROEICs will enable significant applications in computing, quantum computing, communications, learning, imaging, telepresence, sensing, RF/microwave photonics, information storage, cryptography, and data mining.

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34

Belenguer, Angel, Hector Esteban, and Vicente E. Boria. "Novel Empty Substrate Integrated Waveguide for High-Performance Microwave Integrated Circuits." IEEE Transactions on Microwave Theory and Techniques 62, no. 4 (April 2014): 832–39. http://dx.doi.org/10.1109/tmtt.2014.2309637.

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35

Gudkov, Aleksandr. "The prospects of creating of microwave radiothermography based on monolithic integrated circuits." ITM Web of Conferences 30 (2019): 13001. http://dx.doi.org/10.1051/itmconf/20193013001.

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A new approach to the creation of microwave radiothermography is shown. Scientific and technical barriers preventing the creation of relatively inexpensive devices for early diagnosis of tumors, as well as painless and safe monitoring during treatment were identified. An optimal principle of construction of microwave radiothermography based on monolithic integrated circuits is offered.

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36

Lowther, R., P. A. Begley, G. Bajor, A. Rivoli, and W. R. Eisenstadt. "Substrate parasitics and dual-resistivity substrates [microwave integrated circuits]." IEEE Transactions on Microwave Theory and Techniques 44, no. 7 (July 1996): 1170–74. http://dx.doi.org/10.1109/22.508657.

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37

Whatley, T. "Glass Ceramics: An Alternative Substrate for Microwave Integrated Circuits." Microelectronics International 6, no. 2 (February 1989): 38–41. http://dx.doi.org/10.1108/eb044372.

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38

Sharma, Rakesh Kumar, Sandeep Patel, Arun Bindal, and Kamlesh C. Pargaien. "A NOVEL FOUR LAYER METALLIZATION FOR MICROWAVE INTEGRATED CIRCUITS." Progress In Electromagnetics Research Letters 29 (2012): 175–84. http://dx.doi.org/10.2528/pierl11120607.

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39

Carpintero, G., M. Chitoui, F. van Dijk, C. C. Renaud, A. Wonfor, E. A. J. M. Bente, R. V. Penty, et al. "Microwave Photonic Integrated Circuits for Millimeter-Wave Wireless Communications." Journal of Lightwave Technology 32, no. 20 (October 15, 2014): 3495–501. http://dx.doi.org/10.1109/jlt.2014.2321573.

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40

Malmros, Anna, Mattias Südow, Kristoffer Andersson, and Niklas Rorsman. "TiN thin film resistors for monolithic microwave integrated circuits." Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena 28, no. 5 (September 2010): 912–15. http://dx.doi.org/10.1116/1.3475532.

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41

Webb, P. W. "Thermal modeling of power gallium arsenide microwave integrated circuits." IEEE Transactions on Electron Devices 40, no. 5 (May 1993): 867–77. http://dx.doi.org/10.1109/16.210192.

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42

Gudkov, A. G., V. Yu Leushin, S. G. Vesnin, I. A. Sidorov, M. K. Sedankin, Yu V. Solov’ev, S. V. Agasieva, S. V. Chizhikov, D. A. Gorbachev, and S. I. Vidyakin. "Studies of a Microwave Radiometer Based on Integrated Circuits." Biomedical Engineering 53, no. 6 (March 2020): 413–16. http://dx.doi.org/10.1007/s10527-020-09954-w.

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43

Mertin, Wolfgang, Klaus Dieter Herrmann, and Erich Kubalek. "Electron beam testability of monolithic microwave integrated circuits (MMIC)." Microelectronic Engineering 12, no. 1-4 (May 1990): 287–93. http://dx.doi.org/10.1016/0167-9317(90)90043-s.

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44

Christou, Aris. "Monte Carlo reliability model for microwave monolithic integrated circuits." Quality and Reliability Engineering International 24, no. 3 (December 17, 2007): 315–29. http://dx.doi.org/10.1002/qre.896.

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45

Wang, Hong You, and Jin Guang Li. "Research on Interference of Electromagnetic Radiation on Micro-Strip Line." Applied Mechanics and Materials 110-116 (October 2011): 971–76. http://dx.doi.org/10.4028/www.scientific.net/amm.110-116.971.

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Micro-strip line is a kind of transmission line that is the most widely used in microwave integrated circuit. With the development of microwave integrated circuits and the increasing work frequency of the micro-strip line, a higher requirement for its electromagnetic compatibility has been raised. Finite-Difference Time-Domain (FDTD) method has characteristics of good adaptability in the analysis of electromagnetic compatibility issues and superiority in complexity of the structure modeling. For these reasons, this Article uses FDTD method which is widely used in electromagnetic field calculation to analyze the time-domain of micro-strip line, calculates its current and voltage induced in ports and discuss the response feature under different radiation conditions.

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46

Poymalin, V. E., A. V. Buyankin, A. A. Nelin, L. E. Ragulina, and M. V. Ryzhakov. "Shielding Device for Microwave Electronic Components of a Multilayer Board for the AFAR Transceiver Module for Space Purposes." Rocket-space device engineering and information systems 8, no. 2 (2021): 82–87. http://dx.doi.org/10.30894/issn2409-0239.2021.8.2.82.87.

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A method of shielding the elements of a microwave module based on the principles of forming a Faraday cage, with different power and different frequency paths of the AFAR receiving-transmitting module, excluding their mutual electromagnetic influence, is presented. A description of the structure of a multilayer board and various structural elements is given, allowing to limit (screen) the signal in a small volume, commensurate with the size of a monolithic integrated circuit or a set of monolithic integrated circuits, isolating parasitic electromagnetic interference. Polyimide is considered as a dielectric material of a multilayer microwave board for use in space technology devices, as well as promising design solutions for reducing the mass and dimensions of the module.

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47

Wang, J. W., S. D. Yoon, V. G. Harris, C. Vittoria, and N. X. Sun. "Integrated metal magnetic film coupled line circulators for monolithic microwave integrated circuits." Electronics Letters 43, no. 5 (2007): 292. http://dx.doi.org/10.1049/el:20073343.

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48

Mittereder, Jeffrey A. "Backside Etching of GaAs Devices." Microscopy Today 5, no. 2 (March 1997): 18–19. http://dx.doi.org/10.1017/s1551929500060090.

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The following is a technique for analyzing the area underneath a GaAs integrated circuit or discrete device which may aid in failure analysis. This procedure has been used in the past by the microelectronics community, and it is reviewed here for GaAs monolithic microwave integrated circuits (MMICs) and discrete devices. Because it is a destructive method, we use it in our lab after all other testing is completed. The substrate thickness of the GaAs is ∼4 mils (25 μm).

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49

Filippov, Ivan, Nikolay Duchenko, and Yuri Gimpilevich. "Particularities of complex-functional monolithic integrated circuits post-layout simulation." ITM Web of Conferences 30 (2019): 01003. http://dx.doi.org/10.1051/itmconf/20193001003.

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This paper presents a silicon-based complex-functional monolithic microwave integrated circuits (MMICs) design methodology. Post-layout simulation stage particularities are discussed. Pre-tapeout functionality verification results of the C-band phase and amplitude control MMIC based on 0.18 μm SiGe BiCMOS technology are also presented.

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50

Asbeck, P. M., M. F. Chang, K. C. Wang, D. L. Miller, G. J. Sullivan, N. H. Sheng, E. Sovero, and J. A. Higgins. "Heterojunction bipolar transistors for microwave and millimeter-wave integrated circuits." IEEE Transactions on Electron Devices 34, no. 12 (December 1987): 2571–79. http://dx.doi.org/10.1109/t-ed.1987.23356.

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