Relevant bibliographies by topics / Microwave Transistor Amplifiers

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers

Academic literature on the topic 'Microwave Transistor Amplifiers'

Author: Grafiati
Published: 4 June 2021
Last updated: 15 February 2022

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Journal articles on the topic "Microwave Transistor Amplifiers"

1

Rosolowski, Dawid, Wojciech Wojtasiak, and Daniel Gryglewski. "27 dBm Microwave Amplifiers with Adaptive Matching Networks." International Journal of Electronics and Telecommunications 57, no. 1 (2011): 103–8. http://dx.doi.org/10.2478/v10177-011-0015-x.

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27 dBm Microwave Amplifiers with Adaptive Matching Networks The paper describes adaptive amplifier design with varactors and pin diodes as regulators of matching networks. As examples the two amplifiers with SHF-0189 HFET transistor and different matching sections were designed and manufactured. The output power level of 27 dBm and gain higher than 13 dB within L and S-band have been achieved. The amplifier design methodology is based on the small-signal approach and DC characteristics of transistors and regulators. Amplifier adaptivity allows us to remotely control the chosen parameters such
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Sajedin, Maryam, I. T. E. Elfergani, Jonathan Rodriguez, Raed Abd-Alhameed, and Monica Fernandez Barciela. "A Survey on RF and Microwave Doherty Power Amplifier for Mobile Handset Applications." Electronics 8, no. 6 (2019): 717. http://dx.doi.org/10.3390/electronics8060717.

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This survey addresses the cutting-edge load modulation microwave and radio frequency power amplifiers for next-generation wireless communication standards. The basic operational principle of the Doherty amplifier and its defective behavior that has been originated by transistor characteristics will be presented. Moreover, advance design architectures for enhancing the Doherty power amplifier’s performance in terms of higher efficiency and wider bandwidth characteristics, as well as the compact design techniques of Doherty amplifier that meets the requirements of legacy 5G handset applications,
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Urteaga, M., S. Krishnan, D. Scott, et al. "Submicron InP-based HBTs for Ultra-high Frequency Amplifiers." International Journal of High Speed Electronics and Systems 13, no. 02 (2003): 457–95. http://dx.doi.org/10.1142/s0129156403001806.

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Transistor bandwidths are approaching terahertz frequencies. Paramount to high speed transistor operation is submicron device scaling. High bandwidths are obtained with heterojunction bipolar transistors by thinning the base and collector layers, increasing emitter current density, decreasing emitter contact resistivity, and reducing the emitter and collector junction widths. In mesa HBTs, minimum dimensions required for the base contact impose a minimum width for the collector junction, frustrating device scaling. We have fabricated HBTs with narrow collector junctions using a substrate trans
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Squartecchia, Michele, Tom K. Johansen, Jean-Yves Dupuy, et al. "Optimization of InP DHBT stacked-transistors for millimeter-wave power amplifiers." International Journal of Microwave and Wireless Technologies 10, no. 9 (2018): 999–1010. http://dx.doi.org/10.1017/s1759078718001137.

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AbstractIn this paper, we report the analysis, design, and implementation of stacked transistors for power amplifiers realized on InP Double Heterojunction Bipolar Transistors (DHBTs) technology. A theoretical analysis based on the interstage matching between all the single transistors has been developed starting from the small-signal equivalent circuit. The analysis has been extended by including large-signal effects and layout-related limitations. An evaluation of the maximum number of transistors for positive incremental power and gain is also carried out. To validate the analysis, E-band t
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Déchansiaud, A., R. Sommet, T. Reveyrand, et al. "Design, modeling and characterization of MMIC integrated cascode cell for compact Ku-band power amplifiers." International Journal of Microwave and Wireless Technologies 5, no. 3 (2013): 261–69. http://dx.doi.org/10.1017/s1759078713000482.

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This paper reports on the design of a new power cell dedicated to Ku-band power amplifier (PA) applications. This cell called “integrated cascode” has been designed in order to propose a strong decrease in terms of circuit size for PA. The technology used relies on 0.25-μm GaAs pseudomorphic high electron mobility transistors (PHEMT) of United Monolithic Semiconductors (UMS) foundry. A distributed approach is proposed in order to model this power cell. The challenge consists of obtaining, with a better shape factor (ratio between the vertical and horizontal sizes of the transistor), the same p
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Evseev, Vladimir, Mikhail Ivlev, Elena Lupanova, Sergey Nikulin, Vitaliy Petrov, and Andrey Terentyev. "Automation of S-parameters measurements of high-power microwave transistors in a contact device with tunable strip matching circuits." ITM Web of Conferences 30 (2019): 11002. http://dx.doi.org/10.1051/itmconf/20193011002.

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In the practice by microwave power transistor amplifiers developing, the variable load method is usually used to determine the impedances of matching circuits in the complex conjugate matching mode. This solution involves the use of expensive equipment - coaxial impedance tuners and contact devices for mounting transistors in low impedance strip lines. An even more complicated and expensive way is the concept of X- parameters, based on the use of unique measuring equipment - a non-linear vector network analyzer, and a simulator for non-linear circuits design. The article proposes an alternativ
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Schmid, Ulf, Rolf Reber, Sébastien Chartier, et al. "GaN devices for communication applications: evolution of amplifier architectures." International Journal of Microwave and Wireless Technologies 2, no. 1 (2010): 85–93. http://dx.doi.org/10.1017/s1759078710000218.

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This paper presents the design and implementation of power amplifiers using high-power gallium nitride (GaN) high electronic mobility transistor (HEMT) powerbars and monolithic microwave integrated circuits (MMICs). The first amplifier is a class AB implementation for worldwide interoperability for microwave access (WiMAX) applications with emphasis on a low temperature cofired ceramics (LTCC) packaging solution. The second amplifier is a class S power amplifier using a high power GaN HEMT MMIC. For a 450 MHz continuous wave (CW) signal, the measured output power is 5.8 W and drain efficiency
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YALAMANCHILI, RAJ, ZHENG AN QIU, and YEN-CHU WANG. "Review of microwave distributed superconducting vortex-flow transistor amplifiers." International Journal of Electronics 73, no. 3 (1992): 585–604. http://dx.doi.org/10.1080/00207219208925693.

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Baden Fuller, A. J., and M. Runham. "Technical memorandum: Computer design of microwave IC transistor amplifiers." IEE Proceedings H Microwaves, Antennas and Propagation 136, no. 2 (1989): 182. http://dx.doi.org/10.1049/ip-h-2.1989.0034.

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Ahmad, Norhawati, S. S. Jamuar, M. Mohammad Isa, et al. "Extrinsic and Intrinsic Modeling of InGaAs/InAlAs pHEMT for Wireless Applications." Applied Mechanics and Materials 815 (November 2015): 369–73. http://dx.doi.org/10.4028/www.scientific.net/amm.815.369.

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This paper presents the linear modelling of high breakdown InP pseudomorphic High Electron Mobility Transistors (pHEMT) that have been developed and fabricated at the University of Manchester (UoM) for low noise applications mainly for the Square Kilometre Array (SKA) project. The ultra-low leakage properties of a novel InGaAs/InAlAs/InP pHEMTs structure were used to fabricate a series of transistor with total gate width ranging from 0.2 mm to 1.2 mm. The measured DC and S-Parameters data from the fabricated devices were then used for the transistors’ modelling. The transistors demonstrated to
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Dissertations / Theses on the topic "Microwave Transistor Amplifiers"

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Neethling, M. (Marthinus). "A broadband microwave limiting amplifier." Thesis, Stellenbosch : University of Stellenbosch, 2004. http://hdl.handle.net/10019.1/16406.

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Thesis (MScIng)--University of Stellenbosch, 2004.<br>ENGLISH ABSTRACT: Limiting amplifiers are employed in electronic warfare (EW) systems requiring a high measure of amplitude control. These EW systems employ sensitive signal processing components that are unable to accept the full dynamic range of input signals the system must face. The limiting amplifier, however, offers the unique capability of reducing the received signal spectrum to a suitable dynamic range. A typical application of the limiting amplifier is in the instantaneous frequency measurement (IFM) receiver where the limitin
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Cardon, Christopher Don. "1/f AM and PM noise in a common source heterojunction field effect transistor amplifier." Laramie, Wyo. : University of Wyoming, 2007. http://proquest.umi.com/pqdweb?did=1317343431&sid=1&Fmt=2&clientId=18949&RQT=309&VName=PQD.

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Yoo, Seungyup. "Field effect transistor noise model analysis and low noise amplifier design for wireless data communications." Diss., Georgia Institute of Technology, 2000. http://hdl.handle.net/1853/13024.

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Connor, Mark Anthony. "Design of Power-Scalable Gallium Nitride Class E Power Amplifiers." University of Dayton / OhioLINK, 2014. http://rave.ohiolink.edu/etdc/view?acc_num=dayton1405437893.

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Ahmad, Norhawati Binti. "Modelling and design of Low Noise Amplifiers using strained InGaAs/InAlAs/InP pHEMT for the Square Kilometre Array (SKA) application." Thesis, University of Manchester, 2012. https://www.research.manchester.ac.uk/portal/en/theses/modelling-and-design-of-low-noise-amplifiers-using-strained-ingaasinalasinp-phemt-for-the-square-kilometre-array-ska-application(b2b50fd8-0a13-4f71-b3f0-616ee4b2a82b).html.

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The largest 21st century radio telescope, the Square Kilometre Array (SKA) is now being planned, and the first phase of construction is estimated to commence in the year 2016. Phased array technology, the key feature of the SKA, requires the use of a tremendous number of receivers, estimated at approximately 37 million. Therefore, in the context of this project, the Low Noise Amplifier (LNA) located at the front end of the receiver chain remains the critical block. The demanding specifications in terms of bandwidth, low power consumption, low cost and low noise characteristics make the LNA top
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Andrews, Joel. "Design of SiGe HBT power amplifiers for microwave radar applications." Diss., Atlanta, Ga. : Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/28116.

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Thesis (M. S.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2009.<br>Committee Member: John Cressler; Committee Member: John Papapolymerou; Committee Member: Joy Laskar; Committee Member: Thomas Morley; Committee Member: William Hunt.
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Keogh, David Martin. "Design and fabrication of InGaN/GaN heterojunction bipolar transistors for microwave power amplifiers." Connect to a 24 p. preview or request complete full text in PDF format. Access restricted to UC campuses, 2006. http://wwwlib.umi.com/cr/ucsd/fullcit?p3237565.

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Thesis (Ph. D.)--University of California, San Diego, 2006.<br>Title from first page of PDF file (viewed December 13, 2006). Available via ProQuest Digital Dissertations. Vita. Includes bibliographical references.
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Chen, Pin-Fan. "Investigation of GaInP/GaAs double heterojunction bipolar transistors for microwave power amplifier applications /." Diss., Connect to a 24 p. preview or request complete full text in PDF format. Access restricted to UC campuses, 2001. http://wwwlib.umi.com/cr/ucsd/fullcit?p3001274.

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Botterill, Iain Andrew. "The performance of conventional and dual-fed distributed amplifiers, and the use of the heterojunction bipolar transistor in such structures." Thesis, Brunel University, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.307536.

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Heo, Deukhyoun. "Silicon MOS field effect transistor RF/Microwave nonlinear model study and power amplifier development for wireless communications." Diss., Georgia Institute of Technology, 2000. http://hdl.handle.net/1853/15618.

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Books on the topic "Microwave Transistor Amplifiers"

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Gonzalez, Guillermo. Microwave transistor amplifiers: Analysis and design. 2nd ed. Prentice Hall, 1997.

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Bahl, I. J. Fundamentals of RF and microwave transistor amplifiers. Wiley, 2009.

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Root, Loren F. Radio frequency/microwave robust design techniques applied to a transistor amplifier test fixture. Addison-Wesley, 1993.

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Norton, Mark E. Nonlinear modelling of GaAs HBTs applied to spectral regrowth analysis of power amplifiers. University College Dublin, 1997.

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Simons, Rainee. Optoelectric gain control of a microwave single stage GaAs MESFET amplifier. National Aeronautics and Space Administration, 1988.

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Gardner, P. An investigation into microwave low noise negative resistance reflection amplifiers using GaAs field effect transistors. UMIST, 1990.

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Katehi, Linda P. B. SiGe/Si monolithically integrated amplifier circuits: Final report for the period July 3, 1996-November 2, 1997. National Aeronautics and Space Administration, 1998.

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El-Khatib, Ziad. Distributed CMOS bidirectional amplifiers: Broadbanding and linearization techniques. Springer, 2012.

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Bahl, Inder. Fundamentals of RF and Microwave Transistor Amplifiers. Wiley & Sons, Incorporated, John, 2009.

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Gonzalez, Guillermo. Microwave Transistor Amplifiers: Analysis and Design (2nd Edition). 2nd ed. Prentice Hall, 1996.

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Book chapters on the topic "Microwave Transistor Amplifiers"

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Awang, Zaiki. "Design of Microwave Transistor Amplifiers Using S-Parameters." In Microwave Systems Design. Springer Singapore, 2013. http://dx.doi.org/10.1007/978-981-4451-24-6_4.

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Llopis, O., J. Verdier, M. Regis, R. Plana, M. Gayral, and J. Graffeuil. "Correlation Between Microwave Transistors Low Frequency Noise, Amplifiers Residual Phase Noise and Oscillators Phase Noise Consequences On Oscillator Phase Noise Modeling." In Microwave Physics and Techniques. Springer Netherlands, 1997. http://dx.doi.org/10.1007/978-94-011-5540-3_3.

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da Silva, E. "High frequency transistor amplifiers." In High Frequency and Microwave Engineering. Elsevier, 2001. http://dx.doi.org/10.1016/b978-075065046-5/50006-8.

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Kiiss, Aksel. "Microwave Transistor Oscillators and Amplifiers." In Handbook of Microwave Technology. Elsevier, 1995. http://dx.doi.org/10.1016/b978-012374695-5/50014-6.

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Kiiss, Aksel. "Microwave Transistor Oscillators and Amplifiers." In Components and Devices. Elsevier, 1995. http://dx.doi.org/10.1016/b978-0-08-052377-4.50016-4.

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"The Design of Transistor Amplifiers." In Microwave Field-Effect Transistors: Theory, design and applications. Institution of Engineering and Technology, 1994. http://dx.doi.org/10.1049/sbew016e_ch5.

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Ang, Chin Guek. "The Design and Modeling of 2.4 and 3.5 GHz MMIC PA." In Advances in Monolithic Microwave Integrated Circuits for Wireless Systems. IGI Global, 2012. http://dx.doi.org/10.4018/978-1-60566-886-4.ch006.

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This chapter discusses the design of MMIC power amplifiers for wireless application by using 0.15 µm GaAs Power Pseudomorphic High Electron Mobility Transistor (PHEMT) technology with a gate width of 100 µm and 10 fingers at 2.4 GHz and 3.5 GHz. The design methodology for power amplifier design can be broken down into three main sections: architecture design, small-signal design, and large-signal optimization. For 2.4 GHz power amplifier, with 3.0 V drain voltage, the amplifier has achieved 17.265 dB small-signal gain, input and output return loss of 16.310 dB and 14.418 dB, 14.862 dBm 1-dB compression power with 12.318% power-added efficiency (PAE). For 3.5GHz power amplifier, the amplifier has achieved 14.434 dB small-signal gain, input and output return loss of 12.612 dB and 11.746 dB, 14.665 dBm 1-dB compression power with 11.796% power-added efficiency (PAE). The 2.4 GHz power amplifier can be applied for Wireless LAN applications such as WiFi and WPAN whereas 3.5 GHz power amplifier for WiMax base station.
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Rachakh, Amine, Larbi El Abdellaoui, and Mohamed Latrach. "Design and Analysis of a New Configuration of Microwave Power Amplifier." In Advances in Computer and Electrical Engineering. IGI Global, 2019. http://dx.doi.org/10.4018/978-1-5225-7539-9.ch011.

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The chapter has the objective of introducing and explaining the concept of a microwave power amplifier (PA). PA is one of the blocks that has a large effect on the overall performance of communication systems, especially in transmitter systems, and their design is decided by the parameters of the transistor selected. This chapter is divided into three parts, which will be as follows: Part 1 provides background theory relevant to our research. Part 2 describes the matching techniques for PAs. Part 3 utilizes the tools developed in Parts 1 and 2 to analyze and design the proposed microwave power amplifier with a microstrip technology intended for wireless applications.
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Yarlequé, Manuel, Dominique M. M. P. Schreurs, Bart Nauwelaers, Davide Resca, and Giorgio Vannini. "Electromagnetic-Analysis-Based Transistor De-embedding and Related Radio-Frequency Amplifier Design." In Microwave De-embedding. Elsevier, 2014. http://dx.doi.org/10.1016/b978-0-12-401700-9.00008-2.

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Conference papers on the topic "Microwave Transistor Amplifiers"

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Babak, L. I., M. V. Cherkashin, A. Yu Polyakov, K. S. Bodunov, and A. V. Dyagilev. "CAD tools for "visual" design of microwave transistor amplifiers." In 2005 15th International Crimean Conference Microwave and Telecommunication Technology. IEEE, 2005. http://dx.doi.org/10.1109/crmico.2005.1564977.

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Meier, U., J. H. Hinken, and H. Fischer. "An Impedance Transforming Transistor Mounting Structure for Amplifiers in Fin-Line Technique." In 18th European Microwave Conference, 1988. IEEE, 1988. http://dx.doi.org/10.1109/euma.1988.333819.

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Babak, L. I., M. V. Cherkashin, and M. Yu Pokrovsky. "Computer-Aided Design of Utrawide-Band Transistor Amplifiers Using Decomposition Synthesis Method." In 32nd European Microwave Conference, 2002. IEEE, 2002. http://dx.doi.org/10.1109/euma.2002.339246.

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Limsaengruchi, Surachai, Rardchawadee Silapunt, and Danai Torrungrueng. "Design and implementation of microwave transistor amplifiers using two-section CCITLs." In 2014 IEEE International Symposium on Antennas and Propagation & USNC/URSI National Radio Science Meeting. IEEE, 2014. http://dx.doi.org/10.1109/aps.2014.6905172.

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Squartecchia, Michele, Tom K. Johansen, Virginio Midili, et al. "InP DHBT Ballasted Stacked-Transistor for Millimeter-Wave Power Amplifiers." In 2018 IEEE MTT-S Latin America Microwave Conference (LAMC). IEEE, 2018. http://dx.doi.org/10.1109/lamc.2018.8699026.

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Thant, Myo Min, Vitaly A. Romanjuk, Lwin Moe Khaing, Naing Htun Lin, and Than Phyo Kyaw. "Modeling of Microwave Power Amplifiers Based on the Developed Transistor Model (MATRK)." In 2019 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (EIConRus). IEEE, 2019. http://dx.doi.org/10.1109/eiconrus.2019.8656755.

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Silapunt, R., and D. Torrungrueng. "An alternative approach in deriving associated circle equations for microwave transistor amplifiers." In 2008 5th International Conference on Electrical Engineering/Electronics, Computer, Telecommunications and Information Technology (ECTI-CON). IEEE, 2008. http://dx.doi.org/10.1109/ecticon.2008.4600415.

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Millon, Bradley J., Simon M. Wood, and Raymond S. Pengelly. "Design of GaN HEMT Transistor Based Amplifiers for 5 - 6 GHz WiMAX Applications." In 2008 38th European Microwave Conference (EuMC). IEEE, 2008. http://dx.doi.org/10.1109/eumc.2008.4751647.

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Babak, L. I., M. V. Cherkashin, and A. Y. Polyakov. "A New «Region» Technique for Designing Microwave Transistor Low-Noise Amplifiers with Lossless Equalizers." In 2008 38th European Microwave Conference (EuMC). IEEE, 2008. http://dx.doi.org/10.1109/eumc.2008.4751727.

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Verkhova, G. V., and S. V. Akimov. "The universal model of the amplifier two-port circuit for structural-parametric synthesis of microwave transistor amplifiers." In 2017 XX IEEE International Conference on Soft Computing and Measurements (SCM). IEEE, 2017. http://dx.doi.org/10.1109/scm.2017.7970615.

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