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1

Gonzalez, Guillermo. Microwave transistor amplifiers: Analysis and design. 2nd ed. Prentice Hall, 1997.

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2

Bahl, I. J. Fundamentals of RF and microwave transistor amplifiers. Wiley, 2009.

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3

Root, Loren F. Radio frequency/microwave robust design techniques applied to a transistor amplifier test fixture. Addison-Wesley, 1993.

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4

Norton, Mark E. Nonlinear modelling of GaAs HBTs applied to spectral regrowth analysis of power amplifiers. University College Dublin, 1997.

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5

Simons, Rainee. Optoelectric gain control of a microwave single stage GaAs MESFET amplifier. National Aeronautics and Space Administration, 1988.

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6

Gardner, P. An investigation into microwave low noise negative resistance reflection amplifiers using GaAs field effect transistors. UMIST, 1990.

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7

Katehi, Linda P. B. SiGe/Si monolithically integrated amplifier circuits: Final report for the period July 3, 1996-November 2, 1997. National Aeronautics and Space Administration, 1998.

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8

El-Khatib, Ziad. Distributed CMOS bidirectional amplifiers: Broadbanding and linearization techniques. Springer, 2012.

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9

Bahl, Inder. Fundamentals of RF and Microwave Transistor Amplifiers. Wiley & Sons, Incorporated, John, 2009.

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10

Gonzalez, Guillermo. Microwave Transistor Amplifiers: Analysis and Design (2nd Edition). 2nd ed. Prentice Hall, 1996.

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11

Microwave Transistor Amplifiers: Analysis and Design (2nd Edition). Prentice Hall, 1996.

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12

Besser, Les. RF/Microwave Transistor Amplifier Design (Book and Six Disc Cd-Rom Set). Noble Publishing, 2003.

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13

B, Walker John L., ed. High-power GaAs FET amplifiers. Artech House, 1993.

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14

Quen, Tserng Hua, and United States. National Aeronautics and Space Administration., eds. Ka-band GaAs FET monolithic power amplifier development: [contract no. NAS3-24239]. National Aeronautics and Space Administration, 1997.

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15

Quen, Tserng Hua, and United States. National Aeronautics and Space Administration., eds. Ka-band GaAs FET monolithic power amplifier development: [contract no. NAS3-24239]. National Aeronautics and Space Administration, 1997.

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16

Ka-band GaAs FET monolithic power amplifier development: [contract no. NAS3-24239]. National Aeronautics and Space Administration, 1997.

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17

Quen, Tserng Hua, and United States. National Aeronautics and Space Administration., eds. Ka-band GaAs FET monolithic power amplifier development: [contract no. NAS3-24239]. National Aeronautics and Space Administration, 1997.

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