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Dissertations / Theses on the topic 'Microwave Transistor Amplifiers'

Author: Grafiati

Published: 4 June 2021

Last updated: 15 February 2022

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1

Neethling, M. (Marthinus). "A broadband microwave limiting amplifier." Thesis, Stellenbosch : University of Stellenbosch, 2004. http://hdl.handle.net/10019.1/16406.

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Thesis (MScIng)--University of Stellenbosch, 2004.<br>ENGLISH ABSTRACT: Limiting amplifiers are employed in electronic warfare (EW) systems requiring a high measure of amplitude control. These EW systems employ sensitive signal processing components that are unable to accept the full dynamic range of input signals the system must face. The limiting amplifier, however, offers the unique capability of reducing the received signal spectrum to a suitable dynamic range. A typical application of the limiting amplifier is in the instantaneous frequency measurement (IFM) receiver where the limitin

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2

Cardon, Christopher Don. "1/f AM and PM noise in a common source heterojunction field effect transistor amplifier." Laramie, Wyo. : University of Wyoming, 2007. http://proquest.umi.com/pqdweb?did=1317343431&sid=1&Fmt=2&clientId=18949&RQT=309&VName=PQD.

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3

Yoo, Seungyup. "Field effect transistor noise model analysis and low noise amplifier design for wireless data communications." Diss., Georgia Institute of Technology, 2000. http://hdl.handle.net/1853/13024.

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4

Connor, Mark Anthony. "Design of Power-Scalable Gallium Nitride Class E Power Amplifiers." University of Dayton / OhioLINK, 2014. http://rave.ohiolink.edu/etdc/view?acc_num=dayton1405437893.

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5

Ahmad, Norhawati Binti. "Modelling and design of Low Noise Amplifiers using strained InGaAs/InAlAs/InP pHEMT for the Square Kilometre Array (SKA) application." Thesis, University of Manchester, 2012. https://www.research.manchester.ac.uk/portal/en/theses/modelling-and-design-of-low-noise-amplifiers-using-strained-ingaasinalasinp-phemt-for-the-square-kilometre-array-ska-application(b2b50fd8-0a13-4f71-b3f0-616ee4b2a82b).html.

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The largest 21st century radio telescope, the Square Kilometre Array (SKA) is now being planned, and the first phase of construction is estimated to commence in the year 2016. Phased array technology, the key feature of the SKA, requires the use of a tremendous number of receivers, estimated at approximately 37 million. Therefore, in the context of this project, the Low Noise Amplifier (LNA) located at the front end of the receiver chain remains the critical block. The demanding specifications in terms of bandwidth, low power consumption, low cost and low noise characteristics make the LNA top

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6

Andrews, Joel. "Design of SiGe HBT power amplifiers for microwave radar applications." Diss., Atlanta, Ga. : Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/28116.

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Thesis (M. S.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2009.<br>Committee Member: John Cressler; Committee Member: John Papapolymerou; Committee Member: Joy Laskar; Committee Member: Thomas Morley; Committee Member: William Hunt.

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7

Keogh, David Martin. "Design and fabrication of InGaN/GaN heterojunction bipolar transistors for microwave power amplifiers." Connect to a 24 p. preview or request complete full text in PDF format. Access restricted to UC campuses, 2006. http://wwwlib.umi.com/cr/ucsd/fullcit?p3237565.

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Thesis (Ph. D.)--University of California, San Diego, 2006.<br>Title from first page of PDF file (viewed December 13, 2006). Available via ProQuest Digital Dissertations. Vita. Includes bibliographical references.

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8

Chen, Pin-Fan. "Investigation of GaInP/GaAs double heterojunction bipolar transistors for microwave power amplifier applications /." Diss., Connect to a 24 p. preview or request complete full text in PDF format. Access restricted to UC campuses, 2001. http://wwwlib.umi.com/cr/ucsd/fullcit?p3001274.

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9

Botterill, Iain Andrew. "The performance of conventional and dual-fed distributed amplifiers, and the use of the heterojunction bipolar transistor in such structures." Thesis, Brunel University, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.307536.

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10

Heo, Deukhyoun. "Silicon MOS field effect transistor RF/Microwave nonlinear model study and power amplifier development for wireless communications." Diss., Georgia Institute of Technology, 2000. http://hdl.handle.net/1853/15618.

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11

Coen, Christopher T. "Development and integration of silicon-germanium front-end electronics for active phased-array antennas." Thesis, Georgia Institute of Technology, 2012. http://hdl.handle.net/1853/48990.

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The research presented in this thesis leverages silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) technology to develop microwave front-end electronics for active phased-array antennas. The highly integrated electronics will reduce costs and improve the feasibility of snow measurements from airborne and space-borne platforms. Chapter 1 presents the motivation of this research, focusing on the technological needs of snow measurement missions. The fundamentals and benefits of SiGe HBTs and phased-array antennas for these missions are discussed as well. Chapter 2 discusses SiGe pow

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12

Gillet, Vincent. "Développement d'un banc de load-pull actif innovant, utilisant un signal multi-tons large bande pour la mesure de la linéarité (EVM, NPR, ACPR) des dispositifs actifs." Thesis, Limoges, 2019. http://www.theses.fr/2019LIMO0114.

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Cette thèse présente l’utilisation innovante du signal Unequally Spaced Multi-Tones (USMT) dans la mesure de linéarité des transmetteurs de télécommunications (5G). Ce signal offre une nouvelle perspective permettant la caractérisation des formes d’ondes réelles en utilisant un signal avec un nombre de tons très réduit, se comportant comme une extension de la caractérisation 2-tons. Ce signal est simple à mettre en oeuvre, à mesurer et à analyser. Il nécessite des moyens peu onéreux, (générateur de signaux arbitraires, analyseur de spectre). Il peut s’utiliser à différent niveau de l’industrie

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13

Capovilla, Carlos Eduardo. "Circuitos integrados de radio-recepção para a operação de multiplexação espacial de antenas em tempo real." [s.n.], 2008. http://repositorio.unicamp.br/jspui/handle/REPOSIP/260964.

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Orientador: Luiz Carlos Kretly<br>Tese (doutorado) - Universidade Estadual de Campinas, Faculdade de Engenharia Eletrica e de Computação<br>Made available in DSpace on 2018-08-11T03:07:44Z (GMT). No. of bitstreams: 1 Capovilla_CarlosEduardo_D.pdf: 7813094 bytes, checksum: 52ab9727d246649f4c3628a9a462e9c2 (MD5) Previous issue date: 2008<br>Resumo: Esta pesquisa tem por objetivo a concepção de novas topologias de circuitos integrados e suas caracterizações para operação em sistemas de rádio-recepção. O projeto e a fabricação de chaves de RF, LNAs, mixer e VCOs são apresentados. A técnica SMILE

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14

Silva, Andre Tavora de Albuquerque. "Desenvolvimento de tecnologia de dispositivos chaves MEMS - MicroelectromechanicalSystems - para RF - Radio Frequencia - e novas topologias para circuitos integrados CMOS de RF em sub-sistemas de entrada de radio receptores." [s.n.], 2008. http://repositorio.unicamp.br/jspui/handle/REPOSIP/260965.

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Orientador: Luiz Carlos Kretly<br>Tese (doutorado) - Universidade Estadual de Campinas, Faculdade de Engenharia Eletrica e de Computação<br>Made available in DSpace on 2018-08-11T01:55:52Z (GMT). No. of bitstreams: 1 Silva_AndreTavoradeAlbuquerque_D.pdf: 5543671 bytes, checksum: 26990143f84fbd9e80d60304ebc8febc (MD5) Previous issue date: 2008<br>Resumo: Este trabalho apresenta dois tópicos de pesquisa, o primeiro é referente ao projeto e desenvolvimento da tecnologia de fabricação de Chaves MEMS (Micro Electro Mechanical System) de RF e o segundo é o projeto de circuitos integrados. No que s

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15

Yang, Ya-wen, and 楊雅雯. "Enhancement-mode Pseudomorphic High Electron Mobility Transistor Model and Microwave Power Amplifier." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/98383367635348155630.

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碩士<br>國立中央大學<br>電機工程研究所<br>97<br>Power amplifier is a very important component in the wireless transmitter. The high performance power amplifier must depend on accurate nonlinear device model. In this thesis, an accurate nonlinear model and a high linearity power amplifier are designed, analyzed, and demonstrated for InGaAs pHEMT. We proposed a novel current model for 0.5 μm InGaAs pHEMTs enhancement-mode device. The model is differentiable for any order at full bias range by utilizing smooth function technique in the symbolical defined device environment (SDD). The Statz charge model is inc

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16

Maroldt, Stephan [Verfasser]. "Gallium nitride based transistors for high-efficiency microwave switch-mode amplifiers / vorgelegt von Stephan Maroldt." 2010. http://d-nb.info/1010443550/34.

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17

Hwang, Hann-Ping, and 黃漢屏. "Investigation of InAlAs/InGaAs and AlGaAs/GaAs Heterojunction Bipolar Transistors and Their Applications for Microwave Amplifiers." Thesis, 1997. http://ndltd.ncl.edu.tw/handle/22402055254972186590.

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18

"Study of spectral regrowth and harmonic tuning in microwave power amplifier." 2000. http://library.cuhk.edu.hk/record=b5890270.

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Kwok Pui-ho.<br>Thesis (M.Phil.)--Chinese University of Hong Kong, 2000.<br>Includes bibliographical references (leaves [79]-85).<br>Abstracts in English and Chinese.<br>Chapter CHAPTER 1 --- INTRODUCTION --- p.1<br>Chapter CHAPTER 2 --- NONLINEAR BEHAVIOR OF RF POWER AMPLIFIERS --- p.5<br>Chapter 2.1 --- Single Tone Excitation --- p.6<br>Chapter 2.1.1 --- AM-AM Conversion --- p.7<br>Chapter 2.1.2 --- AM-PM Conversion --- p.9<br>Chapter 2.2 --- Two-Tone Excitation --- p.11<br>Chapter 2.2.1 --- Intermodulation Distortion --- p.12<br>Chapter 2.3 --- Digitally Modulated Signal Excitation -

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