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Journal articles on the topic 'Microwave Transistor Amplifiers'

Author: Grafiati

Published: 4 June 2021

Last updated: 15 February 2022

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1

Rosolowski, Dawid, Wojciech Wojtasiak, and Daniel Gryglewski. "27 dBm Microwave Amplifiers with Adaptive Matching Networks." International Journal of Electronics and Telecommunications 57, no. 1 (2011): 103–8. http://dx.doi.org/10.2478/v10177-011-0015-x.

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27 dBm Microwave Amplifiers with Adaptive Matching Networks The paper describes adaptive amplifier design with varactors and pin diodes as regulators of matching networks. As examples the two amplifiers with SHF-0189 HFET transistor and different matching sections were designed and manufactured. The output power level of 27 dBm and gain higher than 13 dB within L and S-band have been achieved. The amplifier design methodology is based on the small-signal approach and DC characteristics of transistors and regulators. Amplifier adaptivity allows us to remotely control the chosen parameters such

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2

Sajedin, Maryam, I. T. E. Elfergani, Jonathan Rodriguez, Raed Abd-Alhameed, and Monica Fernandez Barciela. "A Survey on RF and Microwave Doherty Power Amplifier for Mobile Handset Applications." Electronics 8, no. 6 (2019): 717. http://dx.doi.org/10.3390/electronics8060717.

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This survey addresses the cutting-edge load modulation microwave and radio frequency power amplifiers for next-generation wireless communication standards. The basic operational principle of the Doherty amplifier and its defective behavior that has been originated by transistor characteristics will be presented. Moreover, advance design architectures for enhancing the Doherty power amplifier’s performance in terms of higher efficiency and wider bandwidth characteristics, as well as the compact design techniques of Doherty amplifier that meets the requirements of legacy 5G handset applications,

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3

Urteaga, M., S. Krishnan, D. Scott, et al. "Submicron InP-based HBTs for Ultra-high Frequency Amplifiers." International Journal of High Speed Electronics and Systems 13, no. 02 (2003): 457–95. http://dx.doi.org/10.1142/s0129156403001806.

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Transistor bandwidths are approaching terahertz frequencies. Paramount to high speed transistor operation is submicron device scaling. High bandwidths are obtained with heterojunction bipolar transistors by thinning the base and collector layers, increasing emitter current density, decreasing emitter contact resistivity, and reducing the emitter and collector junction widths. In mesa HBTs, minimum dimensions required for the base contact impose a minimum width for the collector junction, frustrating device scaling. We have fabricated HBTs with narrow collector junctions using a substrate trans

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Squartecchia, Michele, Tom K. Johansen, Jean-Yves Dupuy, et al. "Optimization of InP DHBT stacked-transistors for millimeter-wave power amplifiers." International Journal of Microwave and Wireless Technologies 10, no. 9 (2018): 999–1010. http://dx.doi.org/10.1017/s1759078718001137.

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AbstractIn this paper, we report the analysis, design, and implementation of stacked transistors for power amplifiers realized on InP Double Heterojunction Bipolar Transistors (DHBTs) technology. A theoretical analysis based on the interstage matching between all the single transistors has been developed starting from the small-signal equivalent circuit. The analysis has been extended by including large-signal effects and layout-related limitations. An evaluation of the maximum number of transistors for positive incremental power and gain is also carried out. To validate the analysis, E-band t

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Déchansiaud, A., R. Sommet, T. Reveyrand, et al. "Design, modeling and characterization of MMIC integrated cascode cell for compact Ku-band power amplifiers." International Journal of Microwave and Wireless Technologies 5, no. 3 (2013): 261–69. http://dx.doi.org/10.1017/s1759078713000482.

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This paper reports on the design of a new power cell dedicated to Ku-band power amplifier (PA) applications. This cell called “integrated cascode” has been designed in order to propose a strong decrease in terms of circuit size for PA. The technology used relies on 0.25-μm GaAs pseudomorphic high electron mobility transistors (PHEMT) of United Monolithic Semiconductors (UMS) foundry. A distributed approach is proposed in order to model this power cell. The challenge consists of obtaining, with a better shape factor (ratio between the vertical and horizontal sizes of the transistor), the same p

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Evseev, Vladimir, Mikhail Ivlev, Elena Lupanova, Sergey Nikulin, Vitaliy Petrov, and Andrey Terentyev. "Automation of S-parameters measurements of high-power microwave transistors in a contact device with tunable strip matching circuits." ITM Web of Conferences 30 (2019): 11002. http://dx.doi.org/10.1051/itmconf/20193011002.

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In the practice by microwave power transistor amplifiers developing, the variable load method is usually used to determine the impedances of matching circuits in the complex conjugate matching mode. This solution involves the use of expensive equipment - coaxial impedance tuners and contact devices for mounting transistors in low impedance strip lines. An even more complicated and expensive way is the concept of X- parameters, based on the use of unique measuring equipment - a non-linear vector network analyzer, and a simulator for non-linear circuits design. The article proposes an alternativ

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Schmid, Ulf, Rolf Reber, Sébastien Chartier, et al. "GaN devices for communication applications: evolution of amplifier architectures." International Journal of Microwave and Wireless Technologies 2, no. 1 (2010): 85–93. http://dx.doi.org/10.1017/s1759078710000218.

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This paper presents the design and implementation of power amplifiers using high-power gallium nitride (GaN) high electronic mobility transistor (HEMT) powerbars and monolithic microwave integrated circuits (MMICs). The first amplifier is a class AB implementation for worldwide interoperability for microwave access (WiMAX) applications with emphasis on a low temperature cofired ceramics (LTCC) packaging solution. The second amplifier is a class S power amplifier using a high power GaN HEMT MMIC. For a 450 MHz continuous wave (CW) signal, the measured output power is 5.8 W and drain efficiency

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YALAMANCHILI, RAJ, ZHENG AN QIU, and YEN-CHU WANG. "Review of microwave distributed superconducting vortex-flow transistor amplifiers." International Journal of Electronics 73, no. 3 (1992): 585–604. http://dx.doi.org/10.1080/00207219208925693.

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9

Baden Fuller, A. J., and M. Runham. "Technical memorandum: Computer design of microwave IC transistor amplifiers." IEE Proceedings H Microwaves, Antennas and Propagation 136, no. 2 (1989): 182. http://dx.doi.org/10.1049/ip-h-2.1989.0034.

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10

Ahmad, Norhawati, S. S. Jamuar, M. Mohammad Isa, et al. "Extrinsic and Intrinsic Modeling of InGaAs/InAlAs pHEMT for Wireless Applications." Applied Mechanics and Materials 815 (November 2015): 369–73. http://dx.doi.org/10.4028/www.scientific.net/amm.815.369.

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This paper presents the linear modelling of high breakdown InP pseudomorphic High Electron Mobility Transistors (pHEMT) that have been developed and fabricated at the University of Manchester (UoM) for low noise applications mainly for the Square Kilometre Array (SKA) project. The ultra-low leakage properties of a novel InGaAs/InAlAs/InP pHEMTs structure were used to fabricate a series of transistor with total gate width ranging from 0.2 mm to 1.2 mm. The measured DC and S-Parameters data from the fabricated devices were then used for the transistors’ modelling. The transistors demonstrated to

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11

Poole, C. R., and D. K. Paul. "Optimum Noise Measure Terminations for Microwave Transistor Amplifiers (Short Paper)." IEEE Transactions on Microwave Theory and Techniques 33, no. 11 (1985): 1254–57. http://dx.doi.org/10.1109/tmtt.1985.1133207.

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12

Mabrok, Mussa, Zahriladha Zakaria, and Nasrullah Saifullah. "Design of Wide-band Power Amplifier based on Power Combiner Technique with Low Intermodulation Distortion." International Journal of Electrical and Computer Engineering (IJECE) 8, no. 5 (2018): 3504. http://dx.doi.org/10.11591/ijece.v8i5.pp3504-3511.

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RF power amplifiers are one of challenging blocks in designing radio frequency transceivers, this is due to non-linearity behavior of power amplifiers that leads to inter-modulation distortion. This paper presents the design of wide-band power amplifier which combined with parallel coupled line band pass filter at the input and output of power amplifier to allow the only required frequency band to pass through the power amplifier. Class-A topology and ATF-511P8 transistor are used in this design. Advanced Design System software used as a simulation tool to simulate the designed wide-band power

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13

Corral, Celestino A. "Design of microwave transistor amplifiers with optimum cascaded gain and noise." IET Microwaves, Antennas & Propagation 10, no. 11 (2016): 1196–203. http://dx.doi.org/10.1049/iet-map.2015.0803.

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14

Aronov, V. L., A. S. Evstigneev, G. S. Kolchin, and I. P. Iakovlev. "THE ISSUE OF ENERGY STORAGE CAPACITORS IN PULSE MICROWAVE TRANSISTOR AMPLIFIERS." Electronic Enginering.Semiconductor Devices 253, no. 2 (2019): 30–40. http://dx.doi.org/10.36845/2073-8250-2019-253-2-30-40.

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Link, G. N., and V. S. Rao Gudimetla. "Analytical expressions for simplifying the design of broadband low noise microwave transistor amplifiers." IEEE Transactions on Microwave Theory and Techniques 43, no. 10 (1995): 2498–501. http://dx.doi.org/10.1109/22.466187.

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16

Rachakh, Amine, Larbi El Abdellaoui, Jamal Zbitou, Ahmed Errkik, Abdelali Tajmouati, and Mohamed Latrach. "A Novel Configuration of A Microstrip Power Amplifier based on GaAs-FET for ISM Applications." International Journal of Electrical and Computer Engineering (IJECE) 8, no. 5 (2018): 3882. http://dx.doi.org/10.11591/ijece.v8i5.pp3882-3889.

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Power Amplifiers (PA) are very indispensable components in the design of numerous types of communication transmitters employed in microwave technology. The methodology is exemplified through the design of a 2.45GHz microwave power Amplifier (PA) for the industrial, scientific and medical (ISM) applications using microstrip technology. The main design target is to get a maximum power gain while simultaneously achieving a maximum output power through presenting the optimum impedance which is characteristically carried out per adding a matching circuit between the source and the input of the powe

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17

Kaganov, W. I., and F. Ki. "Redistribution of Signals Power in Multipath System of Radio Communication." Russian Technological Journal 7, no. 4 (2019): 54–59. http://dx.doi.org/10.32362/2500-316x-2019-7-4-54-59.

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Two types of satellite radio of communication systems are compared: single-beam and multibeam. The problem of summation and redistribution of radio signal powers of communication systems is discussed. The power redistribution of a group of microwave transistor amplifiers between different beams is analyzed. An adder circuit based on bridge quadrature devices is considered in two- and four-ray systems. For two such cases, the scattering matrix of the signal power adder was compiled. On the basis of these two cases it is possible to compose a scattering matrix for the number of summed powers of

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18

BOR, SHEAU-SHONG, JIU-CHYUN LIU, and SHU-MING YEH. "Using feedback techniques to design a stable and matching condition for microwave transistor amplifiers." International Journal of Electronics 81, no. 6 (1996): 713–21. http://dx.doi.org/10.1080/002072196136391.

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19

Ikeda, Hikaru, and Yasushi Itoh. "A 2.4 GHz-Band 250 W, 60% Feedback-Type GaN-HFET Oscillator Using Imbalanced Coupling Resonator for Use in the Microwave Oven." Applied Sciences 9, no. 14 (2019): 2887. http://dx.doi.org/10.3390/app9142887.

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Circuit design techniques for enhancing an efficiency of the high power feedback-type GaN-HFET (Gallium Nitride Heterojunction Field Effect Transistor) oscillator for use in the microwave oven are shown in this paper, focusing primarily on the harmonic terminations for high efficiency of power amplifiers, the coupling factor to feedback circuits and the insertion phase adjustment of feedback loops. With the use of these circuit design techniques, an output power of 263 W and an efficiency of 61.3% have been successfully achieved at 2.44 GHz.

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20

UEDA, TETSUZO, YASUHIRO UEMOTO, TSUYOSHI TANAKA, and DAISUKE UEDA. "GaN TRANSISTORS FOR POWER SWITCHING AND MILLIMETER-WAVE APPLICATIONS." International Journal of High Speed Electronics and Systems 19, no. 01 (2009): 145–52. http://dx.doi.org/10.1142/s0129156409006199.

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We review our state-of-the-art GaN -based device technologies for power switching at low frequencies and for future millimeter-wave communication systems. These two applications are emerging in addition to the power amplifiers at microwave frequencies which have been already commercialized for cellular base stations. Technical issues of the power switching GaN device include lowering the fabrication cost, normally-off operation and further increase of the breakdown voltages extracting full potential of GaN -based materials. We establish flat and crack-free epitaxial growth of GaN on Si which c

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21

Nguyen, Huy Hoang, Duy Manh Luong, and Gia Duong Bach. "A Novel Independently Biased 3-Stack GaN HEMT Configuration for Efficient Design of Microwave Amplifiers." Applied Sciences 9, no. 7 (2019): 1510. http://dx.doi.org/10.3390/app9071510.

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The power amplifier (PA) and low-noise amplifier (LNA) are the most critical components of transceiver systems including radar, mobile communications, satellite communications, etc. While the PA is the key component of the transmitter (TX), the LNA is the key component of the receiver (RX) of the transceiver system. It is pointed out that traditional design approaches for both the LNA and PA face challenging drawbacks. When designing an LNA, the power gain and noise figure of the LNA are difficult to improve simultaneously. For PA design, it indicates that efficiency and linearity of the PA ar

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22

Nguty, Tennyson, Tyrone Plata, and Henk Thoonen. "RF and Microwave Power Amplifiers assembly – Interaction between materials, design and process on reliability." International Symposium on Microelectronics 2015, no. 1 (2015): 000510–16. http://dx.doi.org/10.4071/isom-2015-wp63.

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The demand for data anywhere and at anytime (mobile internet) is putting increasing pressure on network operators in their deployment of wireless communication infrastructure. This has pushed upwards across the supply chain, from suppliers to customers. At the core of the infrastucture are RF power amplifiers (PA) with very costly design, hence important to get it right first time. Thermo-mechanical compliance are key attributes to consistent product performance and reliability amidst stringent mission profiles. Most transistor component manufacturers focus on their core competence – component

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23

Gryglewski, Daniel, Wojciech Wojtasiak, Eliana Kamińska, and Anna Piotrowska. "Characterization of Self-Heating Process in GaN-Based HEMTs." Electronics 9, no. 8 (2020): 1305. http://dx.doi.org/10.3390/electronics9081305.

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Thermal characterization of modern microwave power transistors such as high electron-mobility transistors based on gallium nitride (GaN-based HEMTs) is a critical challenge for the development of high-performance new generation wireless communication systems (LTE-A, 5G) and advanced radars (active electronically scanned array (AESA)). This is especially true for systems operating with variable-envelope signals where accurate determination of self-heating effects resulting from strong- and fast-changing power dissipated inside transistor is crucial. In this work, we have developed an advanced m

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Othman, Nurul Aida Farhana, Sharidya Rahman, Sharifah Fatmadiana Wan Muhamad Hatta, Norhayati Soin, Brahim Benbakhti, and Steven Duffy. "Design optimization of the graded AlGaN/GaN HEMT device performance based on material and physical dimensions." Microelectronics International 36, no. 2 (2019): 73–82. http://dx.doi.org/10.1108/mi-09-2018-0057.

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Purpose To design and optimize the traditional aluminum gallium nitride/gallium nitride high electron mobility transistor (HEMT) device in achieving improved performance and current handling capability using the Synopsys’ Sentaurus TCAD tool. Design/methodology/approach Varying material and physical considerations, specifically investigating the effects of graded barriers, spacer interlayer, material selection for the channel, as well as study of the effects in the physical dimensions of the HEMT, have been extensively carried out. Findings Critical figure-of-merits, specifically the DC charac

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Savelkaev, Sergei V., Nadezhda A. Vikhareva, and Natalia V. Chekotun. "METHOD OF COMPLEX REFLECTION PARAMETERS MEASUREMENT OF TRANSISTOR LOADS USING A SIMULATOR-ANALYZER OF MICROWAVE AMPLIFIERS AND OSCILLATORS." Vestnik SSUGT (Siberian State University of Geosystems and Technologies) 26, no. 1 (2021): 150–62. http://dx.doi.org/10.33764/2411-1759-2021-26-1-150-162.

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The article considers a simulator/analyzer that provides simulation modeling of microwave ampli-fiers and oscillators in accordance with their technical specifications, followed by the measurement of complex load reflection coefficients of the active component of these devices for their design. It also considers a method of measurement of these parameters and a method of calibration of the simula-tor/analyzer providing transfer of measurement results from the coaxial measuring line of the simula-tor-analyzer to the microstrip line. In addition, the article considers a method for analyzing the

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Voll, Patricia, Lorene Samoska, Sarah Church, et al. "A G-band cryogenic MMIC heterodyne receiver module for astronomical applications." International Journal of Microwave and Wireless Technologies 4, no. 3 (2012): 283–89. http://dx.doi.org/10.1017/s1759078712000189.

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We report cryogenic noise temperature and gain measurements of a prototype heterodyne receiver module designed to operate in the atmospheric window centered on 150 GHz. The module utilizes monolithic microwave integrated circuit (MMIC) InP high electron mobility transistor (HEMT) amplifiers, a second harmonic mixer, and bandpass filters. Swept local oscillator (LO) measurements show an average gain of 22 dB and an average noise temperature of 87 K over a 40 GHz band from 140 to 180 GHz when the module is cooled to 22 K. A spot noise temperature of 58 K was measured at 166 GHz and is a record f

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Ji-Chyun Liu, Sheau-Shong Bor, Po Chiang Lu, D. K. Paul, P. Gardner, and C. R. Poole. "Comments, with reply, on "Optimum noise measure terminations for microwave transistor amplifiers" by C.R. Poole and D.K. Paul." IEEE Transactions on Microwave Theory and Techniques 41, no. 2 (1993): 363–64. http://dx.doi.org/10.1109/22.216486.

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Ji-Chyun Liu, Sheau-Shong Bor, and Po-Chiang Lu. "Comments on "Optimum noise measure terminations for microwave transistor amplifiers" by C.R. Poole and D.K. Paul [with reply]." IEEE Transactions on Microwave Theory and Techniques 41, no. 11 (1993): 2042–43. http://dx.doi.org/10.1109/22.273438.

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29

Lopez-Diaz, Daniel, Ingmar Kallfass, Axel Tessmann, et al. "High-performance 60 GHz MMICs for wireless digital communication in 100 nm mHEMT technology." International Journal of Microwave and Wireless Technologies 3, no. 2 (2011): 107–13. http://dx.doi.org/10.1017/s1759078711000109.

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Wireless data communication is pushing towards 60 GHz and will most likely be served by SiGe and Complementary Metal Oxide Semiconductor (CMOS) technologies in the consumer market. Nevertheless, some applications are imposing superior performance requirements on the analog frontend, and employing III-V compound semiconductors can provide significant advantages with respect to transmitter power and noise figure. In this paper, we present essential building blocks and a novel single-chip low complexity transceiver Monolithic Microwave Integrated Circuit (MMIC) with integrated antenna switches fo

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Chéron, Jérôme, Michel Campovecchio, Denis Barataud, et al. "Electrical modeling of packaged GaN HEMT dedicated to internal power matching in S-band." International Journal of Microwave and Wireless Technologies 4, no. 5 (2012): 495–503. http://dx.doi.org/10.1017/s1759078712000530.

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The electrical modeling of power packages is a major issue for designers of high-efficiency hybrid power amplifiers. This paper reports the synthesis and the modeling of a packaged Gallium nitride (GaN) High electron mobility transistor (HEMT) associating a nonlinear model of the GaN HEMT die with an equivalent circuit model of the package. The extraction procedure is based on multi-bias S-parameter measurements of both packaged and unpackaged (on-wafer) configurations. Two different designs of 20 W packaged GaN HEMTs illustrate the modeling approach that is validated by time-domain load-pull

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McCulloch, Mark A., Simon J. Melhuish, and Lucio Piccirillo. "Enhancing the noise performance of monolithic microwave integrated circuit-based low noise amplifiers through the use of a discrete preamplifying transistor." Journal of Astronomical Telescopes, Instruments, and Systems 1, no. 1 (2014): 016001. http://dx.doi.org/10.1117/1.jatis.1.1.016001.

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Wentzel, Andreas, Maruf Hossain, Dimitri Stoppel, Nils Weimann, Viktor Krozer, and Wolfgang Heinrich. "An efficient W-band InP DHBT digital power amplifier." International Journal of Microwave and Wireless Technologies 9, no. 6 (2017): 1241–49. http://dx.doi.org/10.1017/s1759078717000198.

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This paper presents for the first time high-efficiency W-band power amplifiers (PAs), the design of which follows the digital PA (DPA) design concept. Two DPAs with different output networks have been realized: a single-band version (S-DPA) for 95 GHz and a dual-band design (D-DPA) for signal frequencies fSof 68 GHz (first band) and 76 GHz (second band), respectively. The PAs are realized as monolithic microwave-integrated circuits (MMICs) in a 0.8 μm InP DHBT transferred-substrate process. They utilize a double-emitter-finger DHBT unit cell with an emitter area of 2 × 0.8 × 6 μm3each. In cont

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Takano, H. "Novel WSi/Au T-shaped gate GaAs metal–semiconductor field-effect-transistor fabrication process for super low-noise microwave monolithic integrated circuit amplifiers." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 13, no. 3 (1995): 1014. http://dx.doi.org/10.1116/1.587895.

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Shevchenko, I. N., and V. G. Kryzhanovskii. "Effect of Collector Current and Voltage Profiles on the Efficiency of Transistor Microwave Power Amplifiers of Class F(H) With Parametric Effects Taken Into Account." Telecommunications and Radio Engineering 52, no. 8 (1998): 68–72. http://dx.doi.org/10.1615/telecomradeng.v52.i8.150.

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Aronov, V. L., E. M. Savchenko, D. M. Moseykin, A. D. Pershin, and D. G. Drozdov. "ANALYSIS OF THE CONDITIONS OF OCCURRENCE AND SUPPRESSION OF LATERAL VIBRATIONS IN MICROWAVE POWER FETS." Electronic engineering Series 2 Semiconductor devices 258, no. 3 (2020): 4–21. http://dx.doi.org/10.36845/2073-8250-2020-258-3-4-21.

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Lateral instability is inherent in power transistors structures, consisting of several simple transistors connected in parallel. The large number of transistor elements complicates the analysis of such instability. The introduction of suppressing resistors makes it possible to prevent the occurrence of lateral oscillations, however there are no unambiguous criteria for achieving stability this way. The matter is further complicated by the fact that transistor exhibits nonlinear operation in a typical amplifier stage, and the operating conditions in many cases correspond to a relatively wide ra

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Runham, M., and A. J. Baden Fuller. "Design of microwave transistors amplifiers." Computer-Aided Design 21, no. 2 (1989): 102–6. http://dx.doi.org/10.1016/0010-4485(89)90145-0.

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Mariem, Jarjar, and Pr EL Quazzani Nabih. "Design of active inductor-based butterworth and chebyshev microwave bandpass filters in standard 0.18µm-CMOS technology." International Journal of Reconfigurable and Embedded Systems (IJRES) 8, no. 1 (2019): 27. http://dx.doi.org/10.11591/ijres.v8.i1.pp27-35.

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<p>In this paper we propose a synthesis of microwave active filters having Butterworth and Chebyshev responses in the frequency range 1GHz-2GHz. The filter fundamental block, used to build an active inductor, consists of CMOS-based Operational Transconductance Amplifier (OTA) circuits. These amplifiers are made out of simple current mirror using MOS transistors. The simulation procedure has been carried out through PSPICE software showing good performances regarding scattering parameters in terms insertion losses, of out-of-band rejection and phase.</p>

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TREW, R. J., and M. W. SHIN. "HIGH FREQUENCY, HIGH TEMPERATURE FIELD-EFFECT TRANSISTORS FABRICATED FROM WIDE BAND GAP SEMICONDUCTORS." International Journal of High Speed Electronics and Systems 06, no. 01 (1995): 211–36. http://dx.doi.org/10.1142/s0129156495000067.

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Electronic and optical devices fabricated from wide band gap semiconductors have many properties ideal for high temperature, high frequency, high power, and radiation hard applications. Progress in wide band gap semiconductor materials growth has been impressive and high quality epitaxial layers are becoming available. Useful devices, particularly those fabricated from SiC, are rapidly approaching the commercialization stage. In particular, MESFETs (MEtal Semiconductor Field-Effect Transistors) fabricated from wide band gap semiconductors have the potential to be useful in microwave power ampl

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Djoric, Aleksandra, Natasa Males-Ilic, Aleksandar Atanaskovic, and Bratislav Milovanovic. "Linearization of broadband microwave amplifier." Serbian Journal of Electrical Engineering 11, no. 1 (2014): 111–20. http://dx.doi.org/10.2298/sjee131130010d.

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The linearization of broadband power amplifier for application in the frequency range 0.9-1.3 GHz is considered in this paper. The amplifier is designed for LDMOSFET characterized by the maximum output power 4W designing the broadband lumped element matching circuits and matching circuits in topologies that combines LC elements and transmission lines. The linearization of the amplifier is carried out by the second harmonics of the fundamental signals injected at the input and output of the amplifier transistor. The effects of linearization are considered for the case of two sinusoidal signals

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Venguer, A. P., J. L. Medina, R. Chávez, and A. Velázquez. "Low-noise one-port microwave transistor amplifier." Microwave and Optical Technology Letters 33, no. 2 (2002): 100–104. http://dx.doi.org/10.1002/mop.10236.

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Ivanov, Boris I., Dmitri I. Volkhin, Ilya L. Novikov, et al. "A wideband cryogenic microwave low-noise amplifier." Beilstein Journal of Nanotechnology 11 (September 30, 2020): 1484–91. http://dx.doi.org/10.3762/bjnano.11.131.

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A broadband low-noise four-stage high-electron-mobility transistor amplifier was designed and characterized in a cryogen-free dilution refrigerator at the 3.8 K temperature stage. The obtained power dissipation of the amplifier is below 20 mW. In the frequency range from 6 to 12 GHz its gain exceeds 30 dB. The equivalent noise temperature of the amplifier is below 6 K for the presented frequency range. The amplifier is applicable for any type of cryogenic microwave measurements. As an example we demonstrate here the characterization of the superconducting X-mon qubit coupled to an on-chip copl

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Darwish, Ali M., H. Alfred Hung, Edward Viveiros, and Amr A. Ibrahim. "Broadband AlGaN/GaN MMIC amplifier." International Journal of Microwave and Wireless Technologies 3, no. 4 (2011): 399–404. http://dx.doi.org/10.1017/s1759078711000195.

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A broadband Monolithic Microwave Integrated Circuit (MMIC) amplifier, with 12 ± 2 dB gain across the 0.1–27 GHz band has been demonstrated using the AlGaN/GaN on SiC technology. The amplifier design employs a non-conventional, series-DC/RF-High Electron Mobility Transistor (HEMT) configuration. This configuration provides an alternative design to the conventional traveling-wave amplifier (TWA). It results in a smaller MMIC chip size, and extends amplifier gain to the low-frequency region. The amplifier MMIC utilizes four HEMT devices in series and could be biased at voltages up to 120 V.

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Trew, R. J. "Wide bandgap semiconductor transistors for microwave power amplifiers." IEEE Microwave Magazine 1, no. 1 (2000): 46–54. http://dx.doi.org/10.1109/6668.823827.

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Sutrisno, S. "Microwave amplifier design using high mobility electron transistor." IOP Conference Series: Materials Science and Engineering 830 (May 19, 2020): 032031. http://dx.doi.org/10.1088/1757-899x/830/3/032031.

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Algani, A., H. Wang, and A. Konczykowska. "Power added efficiency optimisation of microwave transistor amplifier." Electronics Letters 25, no. 8 (1989): 542. http://dx.doi.org/10.1049/el:19890371.

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Hou, Danqiong, Griff L. Bilbro, and Robert J. Trew. "Analytic Model for Conduction Current in AlGaN/GaN HFETs/HEMTs." Active and Passive Electronic Components 2012 (2012): 1–11. http://dx.doi.org/10.1155/2012/806253.

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We have developed a new, zone-based compact physics-based AlGaN/GaN heterojunction field-effect transistor (HFET) model suitable for use in commercial harmonic-balance microwave circuit simulators. The new model is programmed in Verilog-A, an industry-standard compact modeling language. The new model permits the dc, small-signal, and large-signal RF performance for the transistor to be determined as a function of the device geometric structure and design features, material composition parameters, and dc and RF operating conditions. The new physics-based HFET model does not require extensive pa

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Lahsaini, Mohammed, Lahbib Zenkouar, and Seddik Bri. "Modeling of a Microwave Amplifier Operating around 11 GHz for Radar Applications." International Journal of Electrical and Computer Engineering (IJECE) 8, no. 5 (2018): 3496. http://dx.doi.org/10.11591/ijece.v8i5.pp3496-3503.

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The low noise amplifier is one of the basic functional blocks in communication systems. The main interest of the LNA at the input of the analog processing chain is to amplify the signal without adding significant noise. In this work, we have modeled a LNA for radar reception systems operating around 11 GHz, using the technique of impedance transformations with Smith chart utility. The type of transistor used is: the transistor HEMT AFP02N2-00 of Alpha Industries®. The results show that the modeled amplifier has a gain greater than 20 dB, a noise figure less than 2 dB, input and output reflecti

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Safari, Ali, Massoud Dousti, and Mohammad Bagher Tavakoli. "Distributed Amplifier Based on Monolayer Graphene Field Effect Transistor." Journal of Circuits, Systems and Computers 28, no. 14 (2019): 1950231. http://dx.doi.org/10.1142/s0218126619502311.

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Due to the ultra-high carrier mobility and ultralow resistivity of Graphene channel, a Graphene field effect transistor (GFET) is an interesting candidate for future RF and microwave electronics. In this paper, the introduction and review of existing compact circuit-level model of GFETs are presented. A compact GFET model based on drift-diffusion transport theory is then implemented in Verilog-A for RF/microwave circuit analysis. Finally, the GFET model is used to design a GFET-based distributed amplifier (DA) using advanced design system (ADS) tools. The simulation results demonstrate a gain

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KEOGH, D. M., J. C. LI, A. M. CONWAY, et al. "ANALYSIS OF GaN HBT STRUCTURES FOR HIGH POWER, HIGH EFFICIENCY MICROWAVE AMPLIFIERS." International Journal of High Speed Electronics and Systems 14, no. 03 (2004): 831–36. http://dx.doi.org/10.1142/s0129156404002910.

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GaN has become increasingly important for microwave applications up to K a band as a result of its wide band-gap, which provides a high critical breakdown field and good thermal stability, yielding excellent potential for high power and high voltage operation. It is of major interest to understand the device structures that will lead to high efficiency, high power microwave amplifiers. In this paper, we investigate by simulation the microwave performance of InGaN/GaN Heterojunction Bipolar Transistors (HBTs), with proper device geometry to account for the effects of current crowding. We provid

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BURKE, P. J., C. RUTHERGLEN, and Z. YU. "SINGLE-WALLED CARBON NANOTUBES: APPLICATIONS IN HIGH FREQUENCY ELECTRONICS." International Journal of High Speed Electronics and Systems 16, no. 04 (2006): 977–99. http://dx.doi.org/10.1142/s0129156406004119.

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In this paper, we review the potential applications of single-walled carbon nanotubes in three areas: passives (interconnects), actives (transistors), and antennas. In the area of actives, potential applications include transistors for RF and microwave amplifiers, mixers, detectors, and filters. We review the experimental state of the art, and present the theoretical predictions (where available) for ultimate device performance. In addition, we discuss fundamental parameters such as dc resistance as a function of length for individual, single-walled carbon nanotubes.

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