Relevant bibliographies by topics / Microwave transistors Design and construction

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers

Academic literature on the topic 'Microwave transistors Design and construction'

Author: Grafiati
Published: 4 June 2021
Last updated: 14 February 2022

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Journal articles on the topic "Microwave transistors Design and construction"

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Wozniak, Oleksandr, Andriy Vidmysh, and Andriy Stuts. "INVESTIGATION OF THE GRAPHOANALYTICAL METHOD OF DETERMINING THE STANDARD W-PARAMETERS OF THE FOUR-POLE." ENGINEERING, ENERGY, TRANSPORT AIC, no. 4(107) (December 20, 2019): 67–78. http://dx.doi.org/10.37128/2520-6168-2019-4-9.

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The level of social and economic development of modern society is determined by the volume, speed and quality of information processing by methods and technical means. Measurement and information processing systems are becoming an integral part of production automation. The development of radio electronics is inextricably linked with the development of measurements, and the state of modern radio electronics is largely determined by the level of development of measurement methods and the availability of sufficiently advanced measuring equipment to measure the parameters of radio-electronic devices, in particular transistors, allows: first, exploitation; second, to provide the source material for calculating the devices; third, to judge their internal properties and technological features in an average way; fourth, to design new, high-quality devices. The intensification and automation of the processes of production, complication and expansion of the front of scientific experiments entails the need to develop fundamentally new methods and means of measuring transistor parameters based on new algorithms and computers. Increasing the level of semiconductor devices, improving their performance, will inevitably affect potential stability over a wide frequency range. Classical methods and standard measuring equipment are not designed to measure the parameters of potentially unstable transistors. The measurement systems are uncontrollably excited, which increases the measurement error. Therefore, the current task is to measure the parameters of both transistors in particular and quadruplets in general, in the frequency range of potential instability. The clock speed at which modern computer technology operates is very close to the microwave range (ultra high frequencies), which makes the problem of measuring and calculating various functional units of computers and operating elements quite relevant. The development of new methods and means for measuring the parameters of potentially unstable quadruplets in the microwave range is an important scientific area, which can significantly improve the accuracy of their measurement on standard equipment. Improving the performance of the microwave range devices can be achieved both through the use of a fundamentally new element base and through the use of new circuit designs. Promising in this regard is the direction of using the reactive properties of transistors, as well as transistor structures with a negative resistance for the construction of information-measuring systems and operating and computing devices of the microwave range. The graphical methods for determining the parameters of an equivalent four-pole according to the measurement results are, as a rule, much more convenient than analytical ones. Having a mathematical equation and its graphical interpretation, it is relatively easy to determine the required quantities by solving graphical techniques. There are several ways of graphically depicting the relationships that characterize the impedance (conductivity). The following two are the most convenient: 1) pie chart of total resistance in rectangular coordinates [1]; 2) circular diagram of the total resistance in polar coordinates, proposed for the first time by Soviet scientist AR Volpert [2].
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Vozniak, Oleksandr, and Andrii Shtuts. "CALCULATION OF NON-STANDARD W-PARAMETERS OF FOUR-POLE ON BIPOLAR TRANSISTORS." ENGINEERING, ENERGY, TRANSPORT AIC, no. 2(109) (August 27, 2020): 122–28. http://dx.doi.org/10.37128/2520-6168-2020-2-13.

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Improving the performance of microwave devices can be achieved both through the use of a fundamentally new element base, and through the use of new circuit designs. In this respect, the direction of use of the reactive properties of transistors as well as transistor structures with negative resistance for the construction of information-measuring systems and operating and computing devices of the microwave range is promising in this respect. In order to confirm the proposed methods, it is necessary to compare the results of the experimental studies using the proposed methods and means of measuring the W-parameters of real potentially unstable four-poles. As such four-poles it is proposed to use bipolar and transistors with a wide range of frequencies of potential instability. The paper develops mathematical models of W-parameters of such structures and evaluates their parameters in the frequency range. The active four-pole is a transistor model. Its W parameters can be determined either experimentally - for specific conditions or calculated - by using a physical transistor replacement circuit. In most cases, the calculation path is more acceptable because it allows to obtain analytical expressions for the four-pole, it is important in the analysis of the influence of various factors on the characteristics of the scheme under study. The inertial properties of the transistor are already manifested at relatively low frequencies and must be taken into account in practically the entire operating range of the transistor. The theoretical model holds up to frequencies f  2fт (where ft is the limit frequency) [1,3]. At higher frequencies, it is necessary to consider the parasitic reactive parameters of real transistors, first of all, the inductance of the terminals. A physically T-equivalent equivalent transistor replacement scheme was proposed by Pritchard in a simplified version [4]. It has several varieties, differing in the configuration of the circuit consisting of the resistance of the base material and the capacity of the collector junction. If we carefully consider and compare the T and U-shaped circuits of the transistor substitution, it can be noticed that they differ only in the configuration of their inne r part - the theoretical model. At high frequencies P and T, such circuits are not exact mutual equivalents. This is due to the approximation used in the transition from one circuit to another. However, the frequency characteristics of the circuits are very close. Each of them models the processes in the transistor with approximately the same accuracy, and in this sense they are equivalent.
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Runham, M., and A. J. Baden Fuller. "Design of microwave transistors amplifiers." Computer-Aided Design 21, no. 2 (March 1989): 102–6. http://dx.doi.org/10.1016/0010-4485(89)90145-0.

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Stewart, J. A. C. "Microwave Field Effect Transistors—Theory, Design and Applications." Electronics and Power 33, no. 8 (1987): 523. http://dx.doi.org/10.1049/ep.1987.0322.

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Liu, William. "Emitter-length design for microwave power heterojunction bipolar transistors." Solid-State Electronics 36, no. 6 (June 1993): 885–90. http://dx.doi.org/10.1016/0038-1101(93)90011-e.

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Hanreich, G., M. Mayer, M. Mündlein, and J. Nicolics. "Thermal Investigation of GaAs Microwave Power Transistors." Journal of Microelectronics and Electronic Packaging 1, no. 1 (January 1, 2004): 1–8. http://dx.doi.org/10.4071/1551-4897-1.1.1.

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The lower thermal conductivity of gallium arsenide (GaAs) compared to silicon (Si) requires a careful thermal design for optimizing device performance and reliability. In this paper a recently developed thermal simulation tool (TRESCOM II) is applied for investigating the thermal behavior of a heterojunction GaAs power field effect transistor (FET). Main features of the simulation tool are an easy model creation procedure and an efficient numerical solver. Moreover, the tool allows to consider temperature dependent material properties and temperature dependent boundary conditions. The investigation of the thermal behavior of the power transistor has two goals. First goal is to establish the temperature distribution within the active layer of the FET to allow predictions of thermal-electrical interactions. A deeper insight into thermal-electrical interaction will lead to better equivalent circuit models used in electrical circuit design. Due to the fact that reliability of the component is mainly determined by thermal load and induced thermomechanical stress, second goal of this work is to investigate the influence of chip thickness and die bonding variations on the thermal behavior. Thermal response on different power levels is investigated and the influence of chip thickness tolerances and die bonding on the thermal performance of the device is discussed.
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Kärner, Martin, and Ulrich Schaper. "Geometry Considerations for Thermal Design of Microwave Heterojunction Bipolar Transistors." Japanese Journal of Applied Physics 33, Part 1, No. 12A (December 15, 1994): 6501–7. http://dx.doi.org/10.1143/jjap.33.6501.

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Nazoa, N. "Book review: Microwave Field-Effect Transistors—Theory, Design and Applications." IEE Proceedings H Microwaves, Antennas and Propagation 134, no. 4 (1987): 403. http://dx.doi.org/10.1049/ip-h-2.1987.0079.

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Kontsevoy, Yu A., and F. I. Shamkhalov. "MATERIAL AND STRUCTURAL INSPECTION IN THE DESIGN OF GaN MICROWAVE TRANSISTORS." Electronic engineering. Series 2. Semiconductor device 246, no. 3 (2017): 10–14. http://dx.doi.org/10.36845/2073-8250-2017-246-3-10-14.

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Pengelly, R. S. "Erratum: Microwave field-effect transistors — theory, design and applications, 2nd edn." IEE Proceedings H Microwaves, Antennas and Propagation 134, no. 5 (1987): 472. http://dx.doi.org/10.1049/ip-h-2.1987.0093.

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Dissertations / Theses on the topic "Microwave transistors Design and construction"

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Kim, Tong-Ho. "Solid source molecular beam epitaxy of InP-based composite-channel high electron mobility transistor structures of microwave and millimeter-wave power applications." Diss., Georgia Institute of Technology, 2000. http://hdl.handle.net/1853/14859.

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Sayyah, Ali Afkari. "The design of power combined oscillators suitable for millimetre-wave development." Title page, contents and abstract only, 1997. http://web4.library.adelaide.edu.au/theses/09PH/09phs275.pdf.

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Yoo, Seungyup. "Field effect transistor noise model analysis and low noise amplifier design for wireless data communications." Diss., Georgia Institute of Technology, 2000. http://hdl.handle.net/1853/13024.

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Schwierz, Frank Liou Juin J. "Modern microwave transistors : theory, design and performance /." Hoboken, NJ : Wiley-Interscience, 2003. http://www.loc.gov/catdir/toc/wiley023/2002027230.html.

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Barkhordarian, V. "The design and fabrication of Microwave Field-Effect Transistors." Thesis, University of Leeds, 1988. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.233220.

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Lauterbach, Adam Peter. "Low-cost SiGe circuits for frequency synthesis in millimeter-wave devices." Australia : Macquarie University, 2010. http://hdl.handle.net/1959.14/76626.

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"2009"
Thesis (MSc (Hons))--Macquarie University, Faculty of Science, Dept. of Physics and Engineering, 2010.
Bibliography: p. 163-166.
Introduction -- Design theory and process technology -- 15GHz oscillator implementations -- 24GHz oscillator implementation -- Frequency prescaler implementation -- MMIC fabrication and measurement -- Conclusion.
Advances in Silicon Germanium (SiGe) Bipolar Complementary Metal Oxide Semiconductor (BiCMOS) technology has caused a recent revolution in low-cost Monolithic Microwave Integrated Circuit (MMIC) design. -- This thesis presents the design, fabrication and measurement of four MMICs for frequency synthesis, manufactured in a commercially available IBM 0.18μm SiGe BiCMOS technology with ft = 60GHz. The high speed and low-cost features of SiGe Heterojunction Bipolar Transistors (HBTs) were exploited to successfully develop two single-ended injection-lockable 15GHz Voltage Controlled Oscillators (VCOs) for application in an active Ka-Band antenna beam-forming network, and a 24GHz differential cross-coupled VCO and 1/6 synchronous static frequency prescaler for emerging Ultra Wideband (UWB) automotive Short Range Radar (SRR) applications. -- On-wafer measurement techniques were used to precisely characterise the performance of each circuit and compare against expected simulation results and state-of-the-art performance reported in the literature. -- The original contributions of this thesis include the application of negative resistance theory to single-ended and differential SiGe VCO design at 15-24GHz, consideration of manufacturing process variation on 24GHz VCO and prescaler performance, implementation of a fully static multi-stage synchronous divider topology at 24GHz and the use of differential on-wafer measurement techniques. -- Finally, this thesis has llustrated the excellent practicability of SiGe BiCMOS technology in the engineering of high performance, low-cost MMICs for frequency synthesis in millimeterwave (mm-wave) devices.
Mode of access: World Wide Web.
xxii, 166 p. : ill (some col.)
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Cinar, Kamil. "Design And Construction Of A Microwave Plasma Ion Source." Master's thesis, METU, 2011. http://etd.lib.metu.edu.tr/upload/12612910/index.pdf.

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This thesis is about the designing and constructing a microwave ion source. The ions are generated in a thermal and dense hydrogen plasma by microwave induction. The plasma is generated by using a microwave source with a frequency of 2.45 GHz and a power of 700 W. The generated microwave is pulsing with a frequency of 50 Hz. The designed and constructed microwave system generates hydrogen plasma in a pyrex plasma chamber. Moreover, an ion extraction unit is designed and constructed in order to extract the ions from the generated hydrogen plasma. The ion beam extraction is achieved and ion currents are measured. Th e plasma parameters are determined by a double Langmuir probe and the ion current is measured by a Faraday cup. The designed ion extraction unit is simulated by using the dimensions of the designed and constructed ion extraction unit in order to trace out the trajectories of the extracted ions.
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Keogh, David Martin. "Design and fabrication of InGaN/GaN heterojunction bipolar transistors for microwave power amplifiers." Connect to a 24 p. preview or request complete full text in PDF format. Access restricted to UC campuses, 2006. http://wwwlib.umi.com/cr/ucsd/fullcit?p3237565.

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Thesis (Ph. D.)--University of California, San Diego, 2006.
Title from first page of PDF file (viewed December 13, 2006). Available via ProQuest Digital Dissertations. Vita. Includes bibliographical references.
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Andrews, Joel. "Design of SiGe HBT power amplifiers for microwave radar applications." Diss., Atlanta, Ga. : Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/28116.

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Thesis (M. S.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2009.
Committee Member: John Cressler; Committee Member: John Papapolymerou; Committee Member: Joy Laskar; Committee Member: Thomas Morley; Committee Member: William Hunt.
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Sung, YunMo. "Critical analysis of SiC SIT design and performance based upon material and device properties." Diss., Mississippi State : Mississippi State University, 2005. http://sun.library.msstate.edu/ETD-db/ETD-browse/browse.

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Books on the topic "Microwave transistors Design and construction"

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Holzman, Eric. Solid-state microwave power oscillator design. Boston: Artech House, 1992.

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Ladbrooke, Peter H. MMIC design: GaAs FETS and HEMTs. Boston: Artech House, 1989.

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Root, Loren F. Radio frequency/microwave robust design techniques applied to a transistor amplifier test fixture. Reading, Mass: Addison-Wesley, 1993.

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J, Liou Juin, ed. Modern microwave transistors: Theory, design, and performance. Hoboken, N.J: Wiley-Interscience, 2003.

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Grebennikov, Andrei. RF and microwave transistor oscillator design. Chichester, UK: John Wiley & Sons, Ltd, 2007.

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Microwave field-effect transistors: Theory, design, and applications. 3rd ed. Atlanta: Noble, 1995.

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Microwave field-effect transistors: Theory, design, and applications. 2nd ed. Letchworth, Herts., England: Research Studies Press, 1986.

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Microwave circulator design. Norwood, MA: Artech House, 1989.

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Ashburn, Peter. Design and realization of bipolar transistors. Chichester [England]: Wiley, 1988.

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Pekka, Eskelinen, ed. Microwave component mechanics. Boston, MA: Artech House, 2003.

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Book chapters on the topic "Microwave transistors Design and construction"

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Manku, Tajinder. "Microwave Noise Modeling of CMOS Transistors." In Analog Circuit Design, 247–65. Boston, MA: Springer US, 1999. http://dx.doi.org/10.1007/978-1-4757-3047-0_11.

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Poole, Clive, and Izzat Darwazeh. "Microwave transistors and MMICs." In Microwave Active Circuit Analysis and Design, 395–437. Elsevier, 2016. http://dx.doi.org/10.1016/b978-0-12-407823-9.00012-3.

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"Appendix 3: Specific Topologies with Transistors." In Design of Microwave Active Devices, 323–29. Chichester, UK: John Wiley & Sons, Ltd, 2014. http://dx.doi.org/10.1002/9781118814888.app3.

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"Basic Concept of Microwave Device Modeling." In Heterojunction Bipolar Transistors for Circuit Design, 9–50. Singapore: John Wiley & Sons Singapore Pte. Ltd, 2015. http://dx.doi.org/10.1002/9781118921531.ch2.

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"Microwave Noise Modeling and Parameter Extraction Technique for HBTs." In Heterojunction Bipolar Transistors for Circuit Design, 207–43. Singapore: John Wiley & Sons Singapore Pte. Ltd, 2015. http://dx.doi.org/10.1002/9781118921531.ch7.

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"The Design of Transistor Amplifiers." In Microwave Field-Effect Transistors: Theory, design and applications, 177–286. Institution of Engineering and Technology, 1994. http://dx.doi.org/10.1049/sbew016e_ch5.

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"Back Matter." In Microwave Field-Effect Transistors: Theory, design and applications, 683. Institution of Engineering and Technology, 1994. http://dx.doi.org/10.1049/sbew016e_bm.

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"Introduction." In Microwave Field-Effect Transistors: Theory, design and applications, 1–13. Institution of Engineering and Technology, 1994. http://dx.doi.org/10.1049/sbew016e_ch1.

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"Gallium Arsenide Integrated Circuits." In Microwave Field-Effect Transistors: Theory, design and applications, 465–628. Institution of Engineering and Technology, 1994. http://dx.doi.org/10.1049/sbew016e_ch10.

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"Other III-V Materials and Devices." In Microwave Field-Effect Transistors: Theory, design and applications, 629–82. Institution of Engineering and Technology, 1994. http://dx.doi.org/10.1049/sbew016e_ch11.

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Conference papers on the topic "Microwave transistors Design and construction"

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Caddemi, Alina, Giovanni Crupi, and Dominique M. M. P. Schreurs. "Analytical Construction of Nonlinear Lookup Table Model for Advanced Microwave Transistors." In 2007 8th International Conference on Telecommunications in Modern Satellite, Cable and Broadcasting Services. IEEE, 2007. http://dx.doi.org/10.1109/telsks.2007.4375989.

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Barradas, Filipe M., Telmo R. Cunha, Pedro M. Cabral, and Jose C. Pedro. "Magnetless RF Isolator Design Using Grounded Transistors." In 2018 IEEE/MTT-S International Microwave Symposium - IMS 2018. IEEE, 2018. http://dx.doi.org/10.1109/mwsym.2018.8439394.

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Shao, Jin, David Poe, Han Ren, Bayaner Arigong, Mi Zhou, Jun Ding, Rongguo Zhou, Hyoung Soo Kim, and Hualiang Zhang. "Dual-band microwave power amplifier design using GaN transistors." In 2014 IEEE 57th International Midwest Symposium on Circuits and Systems (MWSCAS). IEEE, 2014. http://dx.doi.org/10.1109/mwscas.2014.6908476.

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Mezui-Mintsa, R., M. Tsouli, Z. Enkonda, N. Hassaine, M. Riet, B. Villeforceix, A. Konczykowska, S. Vuye, and H. Wang. "Thermal Design of HBT Power Transistors for Mobile and Satellite Communications." In 22nd European Microwave Conference, 1992. IEEE, 1992. http://dx.doi.org/10.1109/euma.1992.335812.

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Krutov, A. V., V. A. Mitlin, and A. S. Rebrov. "Physics-topological design of GaAs field-effect transistors with a Schottky barrier." In 1999 9th International Crimean Microwave Conference 'Microwave and Telecommunication Technology'. Conference Proceedings. IEEE, 1999. http://dx.doi.org/10.1109/crmico.1999.815147.

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Graffeuil, J., and R. Plana. "Low Frequency Noise Properties of Microwave Transistors and their Application to Circuit Design." In 24th European Microwave Conference, 1994. IEEE, 1994. http://dx.doi.org/10.1109/euma.1994.337198.

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Park, Hyun-chul, Gunhyun Ahn, Sung-chan Jung, Cheon-seok Park, Wan-soo Nah, Byungsung Kim, and Youngoo Yang. "High-Efficiency Class-F Amplifier Design In the Presence of Internal Parasitic Components of Transistors." In 2006 European Microwave Conference. IEEE, 2006. http://dx.doi.org/10.1109/eumc.2006.281249.

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Fyodorov, A. V., and A. V. Omelchenko. "Experiment Design at Construction of Signal Identification Performances." In 2007 17th International Crimean Conference - Microwave & Telecommunication Technology. IEEE, 2007. http://dx.doi.org/10.1109/crmico.2007.4368745.

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"WE1C: Innovative Design and Construction of RF MEMS Switches." In 2007 IEEE/MTT-S International Microwave Symposium. IEEE, 2007. http://dx.doi.org/10.1109/mwsym.2007.380444.

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Sheng-Yi Huang, Kun-Ming Chen, Guo-Wei Huang, Chun-Yen Chang, Cheng-Chou Hung, V. Liang, and Bo-Yuan Chen. "Design for Integration of RF Power Transistors in 0.13 μm Advanced CMOS Technology." In 2007 International Microwave Symposium (IMS 2007). IEEE, 2007. http://dx.doi.org/10.1109/mwsym.2007.380417.

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