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Journal articles on the topic 'Microwave transistors Design and construction'

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Published: 4 June 2021
Last updated: 14 February 2022

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1

Wozniak, Oleksandr, Andriy Vidmysh, and Andriy Stuts. "INVESTIGATION OF THE GRAPHOANALYTICAL METHOD OF DETERMINING THE STANDARD W-PARAMETERS OF THE FOUR-POLE." ENGINEERING, ENERGY, TRANSPORT AIC, no. 4(107) (December 20, 2019): 67–78. http://dx.doi.org/10.37128/2520-6168-2019-4-9.

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The level of social and economic development of modern society is determined by the volume, speed and quality of information processing by methods and technical means. Measurement and information processing systems are becoming an integral part of production automation. The development of radio electronics is inextricably linked with the development of measurements, and the state of modern radio electronics is largely determined by the level of development of measurement methods and the availability of sufficiently advanced measuring equipment to measure the parameters of radio-electronic devices, in particular transistors, allows: first, exploitation; second, to provide the source material for calculating the devices; third, to judge their internal properties and technological features in an average way; fourth, to design new, high-quality devices. The intensification and automation of the processes of production, complication and expansion of the front of scientific experiments entails the need to develop fundamentally new methods and means of measuring transistor parameters based on new algorithms and computers. Increasing the level of semiconductor devices, improving their performance, will inevitably affect potential stability over a wide frequency range. Classical methods and standard measuring equipment are not designed to measure the parameters of potentially unstable transistors. The measurement systems are uncontrollably excited, which increases the measurement error. Therefore, the current task is to measure the parameters of both transistors in particular and quadruplets in general, in the frequency range of potential instability. The clock speed at which modern computer technology operates is very close to the microwave range (ultra high frequencies), which makes the problem of measuring and calculating various functional units of computers and operating elements quite relevant. The development of new methods and means for measuring the parameters of potentially unstable quadruplets in the microwave range is an important scientific area, which can significantly improve the accuracy of their measurement on standard equipment. Improving the performance of the microwave range devices can be achieved both through the use of a fundamentally new element base and through the use of new circuit designs. Promising in this regard is the direction of using the reactive properties of transistors, as well as transistor structures with a negative resistance for the construction of information-measuring systems and operating and computing devices of the microwave range. The graphical methods for determining the parameters of an equivalent four-pole according to the measurement results are, as a rule, much more convenient than analytical ones. Having a mathematical equation and its graphical interpretation, it is relatively easy to determine the required quantities by solving graphical techniques. There are several ways of graphically depicting the relationships that characterize the impedance (conductivity). The following two are the most convenient: 1) pie chart of total resistance in rectangular coordinates [1]; 2) circular diagram of the total resistance in polar coordinates, proposed for the first time by Soviet scientist AR Volpert [2].
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2

Vozniak, Oleksandr, and Andrii Shtuts. "CALCULATION OF NON-STANDARD W-PARAMETERS OF FOUR-POLE ON BIPOLAR TRANSISTORS." ENGINEERING, ENERGY, TRANSPORT AIC, no. 2(109) (August 27, 2020): 122–28. http://dx.doi.org/10.37128/2520-6168-2020-2-13.

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Improving the performance of microwave devices can be achieved both through the use of a fundamentally new element base, and through the use of new circuit designs. In this respect, the direction of use of the reactive properties of transistors as well as transistor structures with negative resistance for the construction of information-measuring systems and operating and computing devices of the microwave range is promising in this respect. In order to confirm the proposed methods, it is necessary to compare the results of the experimental studies using the proposed methods and means of measuring the W-parameters of real potentially unstable four-poles. As such four-poles it is proposed to use bipolar and transistors with a wide range of frequencies of potential instability. The paper develops mathematical models of W-parameters of such structures and evaluates their parameters in the frequency range. The active four-pole is a transistor model. Its W parameters can be determined either experimentally - for specific conditions or calculated - by using a physical transistor replacement circuit. In most cases, the calculation path is more acceptable because it allows to obtain analytical expressions for the four-pole, it is important in the analysis of the influence of various factors on the characteristics of the scheme under study. The inertial properties of the transistor are already manifested at relatively low frequencies and must be taken into account in practically the entire operating range of the transistor. The theoretical model holds up to frequencies f  2fт (where ft is the limit frequency) [1,3]. At higher frequencies, it is necessary to consider the parasitic reactive parameters of real transistors, first of all, the inductance of the terminals. A physically T-equivalent equivalent transistor replacement scheme was proposed by Pritchard in a simplified version [4]. It has several varieties, differing in the configuration of the circuit consisting of the resistance of the base material and the capacity of the collector junction. If we carefully consider and compare the T and U-shaped circuits of the transistor substitution, it can be noticed that they differ only in the configuration of their inne r part - the theoretical model. At high frequencies P and T, such circuits are not exact mutual equivalents. This is due to the approximation used in the transition from one circuit to another. However, the frequency characteristics of the circuits are very close. Each of them models the processes in the transistor with approximately the same accuracy, and in this sense they are equivalent.
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3

Runham, M., and A. J. Baden Fuller. "Design of microwave transistors amplifiers." Computer-Aided Design 21, no. 2 (March 1989): 102–6. http://dx.doi.org/10.1016/0010-4485(89)90145-0.

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4

Stewart, J. A. C. "Microwave Field Effect Transistors—Theory, Design and Applications." Electronics and Power 33, no. 8 (1987): 523. http://dx.doi.org/10.1049/ep.1987.0322.

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5

Liu, William. "Emitter-length design for microwave power heterojunction bipolar transistors." Solid-State Electronics 36, no. 6 (June 1993): 885–90. http://dx.doi.org/10.1016/0038-1101(93)90011-e.

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6

Hanreich, G., M. Mayer, M. Mündlein, and J. Nicolics. "Thermal Investigation of GaAs Microwave Power Transistors." Journal of Microelectronics and Electronic Packaging 1, no. 1 (January 1, 2004): 1–8. http://dx.doi.org/10.4071/1551-4897-1.1.1.

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The lower thermal conductivity of gallium arsenide (GaAs) compared to silicon (Si) requires a careful thermal design for optimizing device performance and reliability. In this paper a recently developed thermal simulation tool (TRESCOM II) is applied for investigating the thermal behavior of a heterojunction GaAs power field effect transistor (FET). Main features of the simulation tool are an easy model creation procedure and an efficient numerical solver. Moreover, the tool allows to consider temperature dependent material properties and temperature dependent boundary conditions. The investigation of the thermal behavior of the power transistor has two goals. First goal is to establish the temperature distribution within the active layer of the FET to allow predictions of thermal-electrical interactions. A deeper insight into thermal-electrical interaction will lead to better equivalent circuit models used in electrical circuit design. Due to the fact that reliability of the component is mainly determined by thermal load and induced thermomechanical stress, second goal of this work is to investigate the influence of chip thickness and die bonding variations on the thermal behavior. Thermal response on different power levels is investigated and the influence of chip thickness tolerances and die bonding on the thermal performance of the device is discussed.
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7

Kärner, Martin, and Ulrich Schaper. "Geometry Considerations for Thermal Design of Microwave Heterojunction Bipolar Transistors." Japanese Journal of Applied Physics 33, Part 1, No. 12A (December 15, 1994): 6501–7. http://dx.doi.org/10.1143/jjap.33.6501.

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8

Nazoa, N. "Book review: Microwave Field-Effect Transistors—Theory, Design and Applications." IEE Proceedings H Microwaves, Antennas and Propagation 134, no. 4 (1987): 403. http://dx.doi.org/10.1049/ip-h-2.1987.0079.

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9

Kontsevoy, Yu A., and F. I. Shamkhalov. "MATERIAL AND STRUCTURAL INSPECTION IN THE DESIGN OF GaN MICROWAVE TRANSISTORS." Electronic engineering. Series 2. Semiconductor device 246, no. 3 (2017): 10–14. http://dx.doi.org/10.36845/2073-8250-2017-246-3-10-14.

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10

Pengelly, R. S. "Erratum: Microwave field-effect transistors — theory, design and applications, 2nd edn." IEE Proceedings H Microwaves, Antennas and Propagation 134, no. 5 (1987): 472. http://dx.doi.org/10.1049/ip-h-2.1987.0093.

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11

Gerrer, Thomas, James Pomeroy, Feiyuan Yang, Daniel Francis, Jim Carroll, Brian Loran, Larry Witkowski, Marty Yarborough, Michael J. Uren, and Martin Kuball. "Thermal Design Rules of AlGaN/GaN-Based Microwave Transistors on Diamond." IEEE Transactions on Electron Devices 68, no. 4 (April 2021): 1530–36. http://dx.doi.org/10.1109/ted.2021.3061319.

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12

Hadjihassan, S., A. Henkel, E. Walter, S. Delage, L. Pronzato, and I. Vuchkov. "Model-based approach to robust design, with application to microwave power transistors." IEEE Transactions on Circuits and Systems I: Fundamental Theory and Applications 49, no. 1 (2002): 76–80. http://dx.doi.org/10.1109/81.974878.

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13

Chaichumporn, C., P. Ngamsirijit, N. Boonklin, K. Eaiprasetsak, and M. Fuangfoong. "Design and Construction of 2.45GHz Microwave Plasma Source at Atmospheric Pressure." Procedia Engineering 8 (2011): 94–100. http://dx.doi.org/10.1016/j.proeng.2011.03.018.

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14

Maity, Heranmoy. "A New Approach to Design and Implementation of 2-Input XOR Gate Using 4-Transistor." Micro and Nanosystems 12, no. 3 (December 1, 2020): 240–42. http://dx.doi.org/10.2174/1876402912666200309120205.

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Aim: This paper proposed the design and implementation of a 2-input XOR gate using 4- transistor. Method : The XOR gate can be designed using NOT gate and 2:1 multiplexer. The NOT gate is designed using two metal–oxide–semiconductor field-effect transistors MOSFETs and an approximate 2:1 multiplexer. The 2:1 multiplexer is designed using two MOSFETs. So, an XOR gate can be designed using four transistors. Results: The proposed work theoretically and experimentally describes the 2-input XOR gate using 4- transistor. The proposed work was verified using Xilinx (ISE Design Suite).
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15

Huang, Bin Wen, and Yuan Jiao. "Design of Outdoor Unit for Wireless Microwave Transmission System." Applied Mechanics and Materials 423-426 (September 2013): 2663–66. http://dx.doi.org/10.4028/www.scientific.net/amm.423-426.2663.

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As a high-frequency, broadband wireless transmission system, wireless microwave transmission system is still paid attention by the whole world. The construction and function of wireless microwave transmission system is introduced in this paper. This paper focuses on the design of outdoor unit for wireless microwave transmission system.
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16

Sergeev, Vyacheslav A., Vitaliy I. Smirnov, Alexander M. Khodakov, Alexander A. Kulikov, and Anton E. Chernyakov. "Influence of Defects of Structure and Construction on Thermal Characteristics of High-Power Bipolar Microwave Transistors." Proceedings of Universities. Electronics 24, no. 5 (October 2019): 479–88. http://dx.doi.org/10.24151/1561-5405-2019-24-5-479-488.

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17

Palmateer, S. C. "Effect of epitaxial layer design on the microwave performance of high electron mobility transistors." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 4, no. 2 (March 1986): 618. http://dx.doi.org/10.1116/1.583392.

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18

Elesin, V. V., G. N. Nazarova, N. A. Usachev, and G. V. Chukov. "Small-signal optimization approach to design of microwave signal switch ICs on MOS transistors." Russian Microelectronics 46, no. 5 (September 2017): 365–69. http://dx.doi.org/10.1134/s106373971705002x.

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19

Rosolowski, Dawid, Wojciech Wojtasiak, and Daniel Gryglewski. "27 dBm Microwave Amplifiers with Adaptive Matching Networks." International Journal of Electronics and Telecommunications 57, no. 1 (March 1, 2011): 103–8. http://dx.doi.org/10.2478/v10177-011-0015-x.

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27 dBm Microwave Amplifiers with Adaptive Matching Networks The paper describes adaptive amplifier design with varactors and pin diodes as regulators of matching networks. As examples the two amplifiers with SHF-0189 HFET transistor and different matching sections were designed and manufactured. The output power level of 27 dBm and gain higher than 13 dB within L and S-band have been achieved. The amplifier design methodology is based on the small-signal approach and DC characteristics of transistors and regulators. Amplifier adaptivity allows us to remotely control the chosen parameters such as: frequency range, output power level, gain and etc.
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20

ISHIBASHI, T., Y. YAMAUCHI, E. SANO, H. NAKAJIMA, and Y. MATSUOKA. "BALLISTIC COLLECTION TRANSISTORS AND THEIR APPLICATIONS." International Journal of High Speed Electronics and Systems 05, no. 03 (September 1994): 349–79. http://dx.doi.org/10.1142/s0129156494000152.

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We describe the design, fabrication and application of ballistic collection transistors (BCTs) in which electron velocity overshoot is introduced in the collector of a GaAs-based heterojunction bipolar transistor. The guideline for the BCT design is the effective confinement of electrons to the Γ-valley, as simulated by Monte Carlo analysis, and the control of electron energy is accomplished basically with an i-p+-n+ doping profile. Microwave characterization demonstrates the existence of significant overshoot and cutoff frequencies higher than 100 GHz at collector current densities in the mid 104 A/cm 2 range for a typical BCT structure. Some high speed integrated circuits implemented with BCTs include a selector circuit that operates at bit rates up to 40 Gb/s, a dynamic frequency divider with divide-by-four function up to 50 GHz and a broadband preamplifier having an S21 bandwidth as high as 40 GHz.
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21

Evseev, Vladimir, Mikhail Ivlev, Stanislav Morugin, and Sergey Nikulin. "Construction of models of microwave transistors when changing the probing signal in the frequency and power range." ITM Web of Conferences 30 (2019): 01010. http://dx.doi.org/10.1051/itmconf/20193001010.

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It is shown that to model a transistor in the form of S-parameters in the large signal mode, it is necessary to present the model as two S-matrices that describe the transistor at two phase differences between the incident and reflected waves equal to 0 and 90 degrees. The problem of matching a transistor with a load is reduced to solving a nonlinear equation with respect to a previously unknown phase difference, after which the load impedance is selected from the complex-conjugate matching condition.
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22

Hajji, R., F. Beanregard, and F. M. Ghannouchi. "Multitone power and intermodulation load-pull characterization of microwave transistors suitable for linear SSPA's design." IEEE Transactions on Microwave Theory and Techniques 45, no. 7 (July 1997): 1093–99. http://dx.doi.org/10.1109/22.598446.

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23

Zhang, Lishu, Yifan Li, Tao Li, and Hui Li. "Electronic transport properties of PbSi Schottky-clamped transistors with a surrounding metal–insulator gate." RSC Advances 8, no. 3 (2018): 1519–27. http://dx.doi.org/10.1039/c7ra11653e.

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24

Hong, I. S., B. S. Park, J. H. Jang, H. J. Kwon, Y. S. Cho, and Y. S. Hwang. "Design and construction of a compact microwave proton source for a proton linac." Review of Scientific Instruments 81, no. 2 (February 2010): 02A314. http://dx.doi.org/10.1063/1.3271170.

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25

Ahmad, Norhawati, S. S. Jamuar, M. Mohammad Isa, Siti Salwa Mat Isa, Muhammad Mahyiddin Ramli, N. Khalid, N. I. M. Nor, Shahrir Rizal Kasjoo, Sohiful Anuar Zainol Murad, and M. Missous. "Extrinsic and Intrinsic Modeling of InGaAs/InAlAs pHEMT for Wireless Applications." Applied Mechanics and Materials 815 (November 2015): 369–73. http://dx.doi.org/10.4028/www.scientific.net/amm.815.369.

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This paper presents the linear modelling of high breakdown InP pseudomorphic High Electron Mobility Transistors (pHEMT) that have been developed and fabricated at the University of Manchester (UoM) for low noise applications mainly for the Square Kilometre Array (SKA) project. The ultra-low leakage properties of a novel InGaAs/InAlAs/InP pHEMTs structure were used to fabricate a series of transistor with total gate width ranging from 0.2 mm to 1.2 mm. The measured DC and S-Parameters data from the fabricated devices were then used for the transistors’ modelling. The transistors demonstrated to operate up to frequencies of 25 GHz. These transistors models are used in the design of Low Noise Amplifiers (LNAs) using fully Monolithic Microwave Integrated Circuit (MMIC) technology.
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26

Marinković, Zlatica D., and Vera V. Marković. "Temperature-dependent models of low-noise microwave transistors based on neural networks." International Journal of RF and Microwave Computer-Aided Engineering 15, no. 6 (2005): 567–77. http://dx.doi.org/10.1002/mmce.20102.

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27

Mariem, Jarjar, and Pr EL Quazzani Nabih. "Design of active inductor-based butterworth and chebyshev microwave bandpass filters in standard 0.18µm-CMOS technology." International Journal of Reconfigurable and Embedded Systems (IJRES) 8, no. 1 (March 1, 2019): 27. http://dx.doi.org/10.11591/ijres.v8.i1.pp27-35.

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<p>In this paper we propose a synthesis of microwave active filters having Butterworth and Chebyshev responses in the frequency range 1GHz-2GHz. The filter fundamental block, used to build an active inductor, consists of CMOS-based Operational Transconductance Amplifier (OTA) circuits. These amplifiers are made out of simple current mirror using MOS transistors. The simulation procedure has been carried out through PSPICE software showing good performances regarding scattering parameters in terms insertion losses, of out-of-band rejection and phase.</p>
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28

Déchansiaud, A., R. Sommet, T. Reveyrand, D. Bouw, C. Chang, M. Camiade, F. Deborgies, and R. Quéré. "Design, modeling and characterization of MMIC integrated cascode cell for compact Ku-band power amplifiers." International Journal of Microwave and Wireless Technologies 5, no. 3 (May 24, 2013): 261–69. http://dx.doi.org/10.1017/s1759078713000482.

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This paper reports on the design of a new power cell dedicated to Ku-band power amplifier (PA) applications. This cell called “integrated cascode” has been designed in order to propose a strong decrease in terms of circuit size for PA. The technology used relies on 0.25-μm GaAs pseudomorphic high electron mobility transistors (PHEMT) of United Monolithic Semiconductors (UMS) foundry. A distributed approach is proposed in order to model this power cell. The challenge consists of obtaining, with a better shape factor (ratio between the vertical and horizontal sizes of the transistor), the same performances than a single transistor with the same gate width. In order to design a 2W amplifier, we have used two 12 × 100 μm transistors. Cascode vertical size is 413 μm whereas a transistor with the same gate width exhibits a vertical size of 790 μm. Therefore, the shape factor is nearly one as compared to a shape factor of 4 for a classical parallel architecture. This new device allows us to decrease the Monolithic microwave integrated circuit amplifier area of 40% compared to amplifier based on single transistors.
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29

Huang, Jun, Yan Jin, Yun An Hu, and Hao Ran Zhang. "Optimized Design for Cockpit Protective Glass Construction against High Power Microwave Using Genetic Algorithm." Advanced Materials Research 403-408 (November 2011): 3777–83. http://dx.doi.org/10.4028/www.scientific.net/amr.403-408.3777.

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According to main challenges to aircraft protection against high power microwave (HPM), the formula of electromagnetic transmission rate and reflectivity both for the perpendicularly and parallely polarized incident field are modified and simplified, a shielded cockpit glass construction is designed by a new optimized method on genetic algorithm, and protective efficiency analysis on military aircraft’s cockpit against HPM is carried out on a virtual 3D plane, airborne equipments and pilot model with a scale of 1:1. The verification simulation tests show the optimized construction has good protective efficiency in the range of carrier frequencies between 1-20 GHz, and protective intensity does not exceed limits of relevant international standard.
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30

Wright, C. C., R. A. Stuart, J. Lucas, A. Al-Shamma’a, and C. Petichakis. "Design and construction of a table top microwave free electron maser for industrial applications." Vacuum 77, no. 4 (March 2005): 527–31. http://dx.doi.org/10.1016/j.vacuum.2004.09.008.

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31

Xu, Geng-fu, Tayo Olorunyolemi, Yuval Carmel, Isabel K. Lloyd, and Otto C. Wilson. "Design and Construction of Insulation Configuration for Ultra-High-Temperature Microwave Processing of Ceramics." Journal of the American Ceramic Society 86, no. 12 (December 2003): 2082–86. http://dx.doi.org/10.1111/j.1151-2916.2003.tb03613.x.

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32

Meng, Xianfeng, and Shenhui Dong. "Design and construction of lightweight C/Co heterojunction nanofibres for enhanced microwave absorption performance." Journal of Alloys and Compounds 810 (November 2019): 151806. http://dx.doi.org/10.1016/j.jallcom.2019.151806.

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33

Aaen, P. H., J. A. Pla, and C. A. Balanis. "Modeling techniques suitable for CAD-based design of internal matching networks of high-power RF/microwave transistors." IEEE Transactions on Microwave Theory and Techniques 54, no. 7 (July 2006): 3052–59. http://dx.doi.org/10.1109/tmtt.2006.877033.

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34

Bhargav, Avireni, and Jitendra Kumar Saini. "A Novel Simple Differentiator Circuit Based on Carbon Nano Tube Field Effect Transistors Voltage Difference Transconductance Amplifier." Micro and Nanosystems 11, no. 2 (August 20, 2019): 133–41. http://dx.doi.org/10.2174/1876402911666190527085225.

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: This paper brings in a new design, namely, voltage mode differentiator with an active element, Carbon Nanotube Field Effect Transistors Voltage Difference Transconductance Amplifier (CNVDTA). The circuit thus proposed needs one Carbon Nanotube Field Effect Transistors Voltage Difference Transconductance Amplifier (CNVDTA) element and a single capacitor. While fabricating IC’s in VLSI design, the proposed circuit proves more adaptable and applicable with the anticipated results. Methods: The proposed CNVDTA based voltage mode differentiator in CNFET technology was simulated at 32 nm at a voltage supply of ±0.9 V using the Cadence Virtuoso CAD tool. Results: It is also reported that the proposed circuit would function with ±0.9 V supply voltage and would also take care of the bias current of the order of 150 µA. Further, on the part of the transconductance (gm), it is electronically tunable with the help of bias current. Conclusion: The CNVDTA based differentiator has been found to be very useful in the triggering circuit of CRO’s, wave shaping circuits, power control circuits etc. It is also found useful in detecting the high-frequency components in the input signals.
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35

Buttress, A. J., J. Katrib, D. A. Jones, A. R. Batchelor, D. A. Craig, T. A. Royal, C. Dodds, and S. W. Kingman. "Towards large scale microwave treatment of ores: Part 1 – Basis of design, construction and commissioning." Minerals Engineering 109 (August 2017): 169–83. http://dx.doi.org/10.1016/j.mineng.2017.03.006.

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36

Kühn, Jutta, Markus Musser, Friedbert van Raay, Rudolf Kiefer, Matthias Seelmann-Eggebert, Michael Mikulla, Rüdiger Quay, Thomas Rödle, and Oliver Ambacher. "Design and realization of GaN RF-devices and circuits from 1 to 30 GHz." International Journal of Microwave and Wireless Technologies 2, no. 1 (February 2010): 115–20. http://dx.doi.org/10.1017/s175907871000019x.

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The design, realization, and characterization of highly efficient powerbars and monolithic microwave integrated circuit (MMIC) high-power amplifiers (HPAs) with AlGaN/GaN high electronic mobility transistors (HEMTs) are presented for the frequency range between 1 and 30 GHz. Packaged powerbars for the frequency range between 1 and 6 GHz have been developed based on a process called GaN50 with a gate length of 0.5 μm. Based on a GaN25 process with a gate length of 0.25 μm, high-power MMIC amplifiers are presented starting from 6 GHz up to advanced X-band amplifiers and robust LNAs in microstrip transmission line technology.
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37

Sakanaka, Shogo, Fujio Hinode, Kiyoshi Kubo, and Junji Urakawa. "Construction of 714 MHz HOM-free accelerating cavities." Journal of Synchrotron Radiation 5, no. 3 (May 1, 1998): 386–88. http://dx.doi.org/10.1107/s0909049597015343.

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A new `higher-order-mode (HOM)-free' accelerating cavity has been developed which can provide an accelerating voltage of more than 400 kV per cavity at a frequency of 714 MHz. The harmful HOMs in the cavities, which can induce beam instabilities at high beam currents, were heavily damped by using four special waveguide ports and broadband microwave loads. Two cavities of this design were installed in the 1.54 GeV accelerator test facility (ATF) damping ring at KEK, and successfully stored beams. This cavity will also be very useful for synchrotron light sources. The basic design, characteristics of HOMs and construction of this cavity are reported.
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38

Ding, Feiqing, Li Ji, Ronny William, Hua Chai, and Xue-Wei Liu. "Design and synthesis of multivalent neoglycoconjugates by click conjugations." Beilstein Journal of Organic Chemistry 10 (June 10, 2014): 1325–32. http://dx.doi.org/10.3762/bjoc.10.134.

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A highly stereoselective BF3∙OEt2-promoted tandem hydroamination/glycosylation on glycal scaffolds has been developed to form propargyl 3-tosylamino-2,3-dideoxysugars in a one-pot manner. Subsequent construction of multivalent 3-tosylamino-2,3-dideoxyneoglycoconjugates with potential biochemical applications was presented herein involving click conjugations as the key reaction step. The copper-catalyzed regioselective click reaction was tremendously accelerated with assistance of microwave irradiation.
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39

Hsu, Meng Kai, Jung Hui Tsai, Shao Yen Chiu, Chung Hsien Wu, Kum Chieh Liang, Kang Ping Liu, Tze Shuan Huang, and Wen Shiung Lour. "Application of Schottky Bulk-Layer Design on Double-Heterojunction Pseudomorphic AlGaAs/InGaAs/AlGaAs High Electron Mobility Transistors (DH-HEMTs)." Advanced Materials Research 47-50 (June 2008): 419–22. http://dx.doi.org/10.4028/www.scientific.net/amr.47-50.419.

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In this work, an application of wide-gap updoed-Al0.22Ga0.78As bulk to perform the field-plate gate (FP-gate) on Al0.22Ga0.78As/In16Ga84As/Al0.22Ga0.78As DH-HEMTs was investigated. The simulated FPG-devices with a bulk thickness of 1200 Å, exhibit an excellent dispersing property to the electric field peak under gate electrode near to drain side, hence, the breakdown characteristics were effectively improved. Measured gate-diode performance of FPG-device presents a higher breakdown voltage (VBR) of -25.5 V than devices with single recess (SRG-device). Enhancement of device breakdown is contributive to microwave power performances. At 2.4 GHz load-pull measurement of studied devices which were biased at class AB operation, the saturated output power (POUT), power gain (GP) and power-added efficiency (PAE) were 13.06 dBm (202 mW/mm), 12.8 db and 47.3% for FPG-device. These measured results of SRG-device were 10.3 dBm(107 mW/mm), 13.2 db and 38.5%, According to the simulated results, FPG-devices structuring with a bulk layer exhibit excellent performance for high breakdown and microwave power operation.
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40

Kumar, Deepak, and Kalpana Chaudhary. "Design of a Circular Polarized Printed Rectenna for Satellite Solar Power Station Array Construction." International Journal of Engineering & Technology 7, no. 4.5 (September 22, 2018): 254. http://dx.doi.org/10.14419/ijet.v7i4.5.20081.

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A circularly polarized single feed microstrip patch antenna with voltage doubler rectification is designed at 2.45 GHz for satellite solar wireless power transfer application. A bandpass filter is also designed and combined with an antenna that will efficiently eliminate signal harmonics up to third order. An HSMS-8202 microwave zero-bias Schottky barrier diodes accessible in SOT 23 package as the series pair is utilized in the proposed rectenna design. The rectenna has a high conversion efficiency of 70%. The printed rectenna can be interconnected to construct the rectenna arrays.
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41

Evseev, Vladimir, Mikhail Ivlev, Elena Lupanova, Sergey Nikulin, Vitaliy Petrov, and Andrey Terentyev. "Automation of S-parameters measurements of high-power microwave transistors in a contact device with tunable strip matching circuits." ITM Web of Conferences 30 (2019): 11002. http://dx.doi.org/10.1051/itmconf/20193011002.

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In the practice by microwave power transistor amplifiers developing, the variable load method is usually used to determine the impedances of matching circuits in the complex conjugate matching mode. This solution involves the use of expensive equipment - coaxial impedance tuners and contact devices for mounting transistors in low impedance strip lines. An even more complicated and expensive way is the concept of X- parameters, based on the use of unique measuring equipment - a non-linear vector network analyzer, and a simulator for non-linear circuits design. The article proposes an alternative solution adapted to the operation of the transistor in real conditions and allowing to design the output stages of microwave power amplifiers using analysis and optimization of linear electrical circuits. The essence of the proposed solution is to automate the measurement of non-linear S-parameters of high-power microwave transistors in a contact device with tunable strip matching circuits for various DC supply voltage, frequency and input power mode in case of continuous or pulse input signal. The nonlinear S-parameters of the contact device are measured using the method of spatially remote variable load in the frequency range, in which the line conditioning and the maximum output power are achieved. The minimum of the reflected wave amplitude and the maximum gain are reached using movable strip matching transformers. The S-parameters measured in the coaxial line are automatically recalculated to the physical boundaries of the transistor by registering the positions of the input and output strip transformers.
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42

Rousseau, M., and J. C. De Jaeger. "2D-Hydrodynamic Energy Model Including Avalanche Breakdown Phenomenon for Power Field Effect Transistors." VLSI Design 13, no. 1-4 (January 1, 2001): 323–28. http://dx.doi.org/10.1155/2001/69472.

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A 2D-Hydrodynamic model is carried out to predict the breakdown voltage of microwave field effect transistors. The model is based on the conservation equations inferred from Boltzmann's transport equation, coupled with Poisson’s equation. In order to take into account the channel avalanche breakdown, the charge conservation equations for electrons and holes are considered and a generation term is introduced. The set of equations is solved using finite difference and different computational methods have been tested to save computing time. The model allows us to obtain accurate predictions for power transistors considering a usual gate recess. Results are performed for pseudomorphic ALGaAs/InGaAs/GaAs HEMTs.
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43

Lau, J. H., and L. B. Lian-Mueller. "Finite Element Modeling for Optimizing Hermetic Package Reliability." Journal of Electronic Packaging 111, no. 4 (December 1, 1989): 255–60. http://dx.doi.org/10.1115/1.3226544.

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The thermal stresses in microwave packages are studied by the finite element method. Emphasis is placed on the effects of material construction and design on the reliability of very small hermetic packages. Three different microwave packages have been designed and six finite element models (two for each design) have been analyzed. To verify the validity of the finite element results, some leak tests have been performed and the results agree with the analytical conclusions. The results presented herein should provide a better understanding of the thermal behavior of hermetic packages and should be useful for their optimal design.
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44

Keshtkar, Asghar, Ahmad Keshtkar, and A. R. Dastkhosh. "Circular Microstrip Patch Array Antenna for C-Band Altimeter System." International Journal of Antennas and Propagation 2008 (2008): 1–7. http://dx.doi.org/10.1155/2008/389418.

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The purpose of this paper is to discuss the practical and experimental results obtained from the design, construction, and test of an array of circular microstrip elements. The aim of this antenna construction was to obtain a gain of 12 dB, an acceptable pattern, and a reasonable value of SWR for altimeter system application. In this paper, the cavity model was applied to analyze the patch and a proper combination of ordinary formulas; HPHFSS software and Microwave Office software were used. The array includes four circular elements with equal sizes and equal spacing and was planed on a substrate. The method of analysis, design, and development of this antenna array is explained completely here. The antenna is simulated and is completely analyzed by commercial HPHFSS software. Microwave Office 2006 software has been used to initially simulate and find the optimum design and results. Comparison between practical results and the results obtained from the simulation shows that we reached our goals by a great degree of validity.
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45

Desogus, Francesco, and Renzo Carta. "Design of a chemical reactor under microwave irradiation in resonance conditions." Thermal Science 23, no. 1 (2019): 61–72. http://dx.doi.org/10.2298/tsci161130173d.

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Reaction processes often show to be improved by microwave application, but the enhancing effect is not always due solely to the temperature increasing in the medium, which is produced by the radiation exposure. Thus, to study the evolution of such kind of processes needs a strict control of the irradiation conditions and the use of a proper reaction apparatus in which the interaction between radiation and irradiated materials can be precisely defined. The present work is made necessary by the need of operating with controlled and reproducible experimental conditions, and the aim was to design a multi-tube reactor, to work in resonance conditions, inside which the tubes with the fluid to be processed are positioned. In fact, working in resonance conditions allows the irradiated fluid to be exposed to constant microwave power, and the field intensity and power absorption can be accurately calculated and mapped. The cavity was designed by the authors using a proper commercial software for 3-D electromagnetic simulation, then the reactor operation was tested by another commercial multiphysic simulation software. The results here presented show the proper geometrical characteristics of the cavity and of the internal tubes to work at 2.45 GHz of frequency while the irradiation power can be varied depending on the needs of the process. The reactor can work with different homogeneous systems, both chemical and biological (enzyme reactions). The future development will be the construction and the real operation of the designed apparatus in order to confirm the simulation results.
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Mullner, David, Brooke Garner, and Donald Plumlee. "Feasibility of Micro-Plasma Transistor Devices in LTCC." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2012, CICMT (September 1, 2012): 000365–69. http://dx.doi.org/10.4071/cicmt-2012-wa43.

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The project will determine if making a novel micro-plasma transistor device (MPT device) in LTCC is feasible and advantageous. MPT devices control plasma, created by an antenna, by using electrodes. Using LTCC could be beneficial due to its properties involving plasma erosion and the ability for integrated 3D electronic construction. The layer construction of LTCC makes it relatively easy to implement the design, using five layers to produce a variety of configurations. The device will consist of source, gate, and drain electrodes on different layers of LTCC, with the antenna creating the plasma. The MPT device will be fabricated using DuPont 951 LTCC tapes and the ceramic MEMS fabrication process. A test matrix will be made to understand how micro-plasma transistors behave in LTCC. The matrix will include variations in hole diameter and operational parameters such as electrode configuration and voltage. The MPT device will be tested at BSU using a vacuum chamber and associated electronic hardware. After the tests are administered, the feasibility of micro-plasma transistors in LTCC will be determined.
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47

Muraro, Jean-Luc, Guillaume Nicolas, Do Minh Nhut, Stéphane Forestier, Stéphane Rochette, Olivier Vendier, Dominique Langrez, Jean-Louis Cazaux, and Marziale Feudale. "GaN for space application: almost ready for flight." International Journal of Microwave and Wireless Technologies 2, no. 1 (February 2010): 121–33. http://dx.doi.org/10.1017/s1759078710000206.

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On the last years, gallium nitride (GaN) technology has made a remarked breakthrough in the world of microwave electronics. Power transistors are now available. How this GaN technology would impact space-borne units is now a priority concern. Although the power capability of GaN technology is the first obvious profit, GaN could also be used for other applications like low noise amplifiers, mixers, and probably more. The high sustainable temperature of GaN transistors is most striking advantage for in-flight use. This is connected to packaging design which is also experiencing a lot of activities and quick progresses. Of course, space application is dependent upon the full demonstration of reliability and this constitutes another field of investigation. Finally, after 8 years of GaN studies, experimental results are presented: they open wide the road a revolution inside space-borne electronics: the rise of GaN.
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48

Suriyavongpongsa, Bundit, and Cumnueng Watyotha. "Design and Performance Evaluation of Hot Air-Microwave Continuous Belt Dryer for Drying Block Rubber STR 20." Advanced Materials Research 1044-1045 (October 2014): 280–86. http://dx.doi.org/10.4028/www.scientific.net/amr.1044-1045.280.

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This aim of this research study was to examine the design and construction, as well as to test the performance of hot air-microwave continuous belt dryer machines for drying block rubber STR 20. This industrial type of machine is divided into three major systems: 1) the hot air system, 2) the microwave heating system, and 3) the drying room and conveyor systems. The experiments in this study have shown that the machine can produce heat in the temperature range covered to dry block rubber and the temperature is precise enough within a range of 100 to 130°C (±0.5°C). Security experiments on the microwave leakage have shown that it does not exceed the standards of the HHS (no more than 5 mill watts per square centimeter). Performance experiments have indicated the heat distribution was 83.46 percent which is over 65% of what is considered normal, and the power of the microwave was measured by testing was the value of 24.42 percent of the magnetron wattage used.
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Squartecchia, Michele, Tom K. Johansen, Jean-Yves Dupuy, Virginio Midili, Virginie Nodjiadjim, Muriel Riet, and Agnieszka Konczykowska. "Optimization of InP DHBT stacked-transistors for millimeter-wave power amplifiers." International Journal of Microwave and Wireless Technologies 10, no. 9 (August 7, 2018): 999–1010. http://dx.doi.org/10.1017/s1759078718001137.

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AbstractIn this paper, we report the analysis, design, and implementation of stacked transistors for power amplifiers realized on InP Double Heterojunction Bipolar Transistors (DHBTs) technology. A theoretical analysis based on the interstage matching between all the single transistors has been developed starting from the small-signal equivalent circuit. The analysis has been extended by including large-signal effects and layout-related limitations. An evaluation of the maximum number of transistors for positive incremental power and gain is also carried out. To validate the analysis, E-band three- and four-stacked InP DHBT matched power cells have been realized for the first time as monolithic microwave integrated circuits (MMICs). For the three-stacked transistor, a small-signal gain of 8.3 dB, a saturated output power of 15 dBm, and a peak power added efficiency (PAE) of 5.2% have been obtained at 81 GHz. At the same frequency, the four-stacked transistor achieves a small-signal gain of 11.5 dB, a saturated output power of 14.9 dBm and a peak PAE of 3.8%. A four-way combined three-stacked MMIC power amplifier has been implemented as well. It exhibits a linear gain of 8.1 dB, a saturated output power higher than 18 dBm, and a PAE higher than 3% at 84 GHz.
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50

Wang, Zheng Jun, Xiao Ou Jin, and Dian Min Sun. "Applying Research on Microwave Promoting Curdle of Cement Concrete Appending UNF-5 Water-Reducing Agent." Advanced Materials Research 250-253 (May 2011): 1042–45. http://dx.doi.org/10.4028/www.scientific.net/amr.250-253.1042.

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In order to shorten time-periodic of mix design and verification of cement concrete in the period of construction, and can realize the node control of key procedure of cement concrete structure. The paper obtained and established relationship between super-early-stage strength and compressive strength of 7d, 14d and 28d of cement concrete on based of microwave promoting curdle. The method can realize predication of cement concrete through microwave promoting curdle.
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