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Journal articles on the topic 'Microwave transistors'

Author: Grafiati

Published: 4 June 2021

Last updated: 26 January 2023

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1

FLANDRE, D., J. P. RASKIN, and D. VANHOENACKER-JANVIER. "SOI CMOS TRANSISTORS FOR RF AND MICROWAVE APPLICATIONS." International Journal of High Speed Electronics and Systems 11, no. 04 (2001): 1159–248. http://dx.doi.org/10.1142/s0129156401001076.

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The new communication markets are vey demanding: high frequency, high degree of integration, low power consumption. Silicon-on-Insulator offers many advantages and this paper illustrates the potentialities of this technology for RF and microwave applictions. After an overview of the SOI material, the properties of the SOI MOSFET's are analyzed and compared to bulk Si MOSFET's. The models of transmission lines and inductors on SOI are compared and further used in the on-wafer characterization of the transistors. Various models for the transistors are presented and their limitations are given. A

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2

Kuliev, M. V. "Influence of the Heterostructure Composition on the Long-Term Stability of a Microwave Oscillator." Nano- i Mikrosistemnaya Tehnika 24, no. 1 (2022): 27–29. http://dx.doi.org/10.17587/nmst.24.27-29.

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In this work, we investigated the influence of the composition of the GaxAl1-xN/GaN microwave transistor heterostructure on the long-term frequency stability of microwave generators. The relationship between the parameters of the transistor structure and the characteristics of microwave generators based on HEMT transistors is determined.

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3

Balti, M., D. Pasquet, and A. Samet. "PROPAGATION EFFECTS ON Z PARAMETERS IN AN FET EQUIVALENT CIRCUIT." SYNCHROINFO JOURNAL 7, no. 5 (2021): 21–25. http://dx.doi.org/10.36724/2664-066x-2021-7-5-21-25.

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The design of microwave circuits needs a good analysis of the performances of the field-effect transistor equivalent circuit. Indeed the small signal equivalent circuit of the field-effect transistors makes it possible to easily determine their performances such as the gain and the noise figure. A field-effect transistor constitutes a propagation structure along its gate width. Telegraphists’ equations are solved for this structure. One deduces from this the effect of the propagation on the transistor Z-parameters which can be taken into account in electric simulations and which may improve th

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Savelkaev, Sergey, Valerik Airapetyan, and Vladimir Litovchenko. "Three Sectional Drift-Diffusion Mathematical Model Of The Field Effect Transistor With A Schottky Barrier." Siberian Journal of Physics 10, no. 1 (2015): 57–62. http://dx.doi.org/10.54362/1818-7919-2015-10-1-57-62.

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Three sectional drift-diffusion mathematical model of the field effect transistor with a Schottky barrier is proposed. It takes into account the accumulation of charge carriers in the additionally introduced third section, which significantly improves the accuracy of the calculation of the current-voltage characteristics flat area of the transistors. This is important for developers of these transistors, as well as for amplifying and autogenerating microwave devices constructors.

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5

Bogdanov, Sergey. "Application of Neural Networks in the Construction of Nonlinear Models of Field-Effect Transistors." Infocommunications and Radio Technologies 5, no. 1 (2022): 45–53. http://dx.doi.org/10.29039/2587-9936.2022.05.1.03.

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The nonlinear model of a field-effect transistor based on the mathematical apparatus of the theory of artificial neural networks was developed. The main feature of this model is the possibility of training neural networks used to approximate the current-voltage characteristic and the gate-drain and gate-source capacitances of a nonlinear transistor model by using optimization algorithms built into popular microwave CAD systems. This makes it possible to use the well-known advantages of neural networks in the problems of function approximation to increase the reliability of the results of non-l

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6

Ahmad, Norhawati, S. S. Jamuar, M. Mohammad Isa, et al. "Extrinsic and Intrinsic Modeling of InGaAs/InAlAs pHEMT for Wireless Applications." Applied Mechanics and Materials 815 (November 2015): 369–73. http://dx.doi.org/10.4028/www.scientific.net/amm.815.369.

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This paper presents the linear modelling of high breakdown InP pseudomorphic High Electron Mobility Transistors (pHEMT) that have been developed and fabricated at the University of Manchester (UoM) for low noise applications mainly for the Square Kilometre Array (SKA) project. The ultra-low leakage properties of a novel InGaAs/InAlAs/InP pHEMTs structure were used to fabricate a series of transistor with total gate width ranging from 0.2 mm to 1.2 mm. The measured DC and S-Parameters data from the fabricated devices were then used for the transistors’ modelling. The transistors demonstrated to

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7

Gromov, Dmitry, and Vadim Elesin. "Long-term radiation effects in GaAs microwave devices exposed to pulsed ionizing radiation." ITM Web of Conferences 30 (2019): 10005. http://dx.doi.org/10.1051/itmconf/20193010005.

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The investigation results of the GaAs microwave devices characteristics under pulse irradiation are presented. The study covers the field effect transistor with Schottky barrier, pseudomorphic high-electron mobility transistors and resonant tunnelling diodes implemented in GaAs technology processes. It has been demonstrated that GaAs MESFET, pHEMT and RTDs may show the long-term parameter recovery undo pulsed ionizing exposure.

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8

Mantena, N. R. "High Power Microwave Transistors." IETE Technical Review 3, no. 2 (1986): 39–46. http://dx.doi.org/10.1080/02564602.1986.11437891.

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9

Đorđević, Vladica, Zlatica Marinković, and Olivera Pronić-Rančić. "COMPARATIVE ANALYSIS OF DIFFERENT CAD METHODS FOR EXTRACTION OF THE HEMT NOISE WAVE MODEL PARAMETERS." Facta Universitatis, Series: Automatic Control and Robotics 16, no. 2 (2017): 117. http://dx.doi.org/10.22190/fuacr1702119d.

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The noise wave model has appeared as a very appropriate model for the purpose of transistor noise modeling at microwave frequencies. The transistor noise wave model parameters are usually extracted from the measured transistor noise parameters by using time-consuming optimization procedures in microwave circuit simulators. Therefore, three different Computer-Aided Design methods that enable more efficient automatic determination of these parameters in the case of high electron-mobility transistors were developed. All of these extraction methods are based on different noise de-embedding procedu

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10

Déchansiaud, A., R. Sommet, T. Reveyrand, et al. "Design, modeling and characterization of MMIC integrated cascode cell for compact Ku-band power amplifiers." International Journal of Microwave and Wireless Technologies 5, no. 3 (2013): 261–69. http://dx.doi.org/10.1017/s1759078713000482.

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This paper reports on the design of a new power cell dedicated to Ku-band power amplifier (PA) applications. This cell called “integrated cascode” has been designed in order to propose a strong decrease in terms of circuit size for PA. The technology used relies on 0.25-μm GaAs pseudomorphic high electron mobility transistors (PHEMT) of United Monolithic Semiconductors (UMS) foundry. A distributed approach is proposed in order to model this power cell. The challenge consists of obtaining, with a better shape factor (ratio between the vertical and horizontal sizes of the transistor), the same p

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11

Evseev, Vladimir, Mikhail Ivlev, Elena Lupanova, Sergey Nikulin, Vitaliy Petrov, and Andrey Terentyev. "Automation of S-parameters measurements of high-power microwave transistors in a contact device with tunable strip matching circuits." ITM Web of Conferences 30 (2019): 11002. http://dx.doi.org/10.1051/itmconf/20193011002.

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In the practice by microwave power transistor amplifiers developing, the variable load method is usually used to determine the impedances of matching circuits in the complex conjugate matching mode. This solution involves the use of expensive equipment - coaxial impedance tuners and contact devices for mounting transistors in low impedance strip lines. An even more complicated and expensive way is the concept of X- parameters, based on the use of unique measuring equipment - a non-linear vector network analyzer, and a simulator for non-linear circuits design. The article proposes an alternativ

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12

Rosolowski, Dawid, Wojciech Wojtasiak, and Daniel Gryglewski. "27 dBm Microwave Amplifiers with Adaptive Matching Networks." International Journal of Electronics and Telecommunications 57, no. 1 (2011): 103–8. http://dx.doi.org/10.2478/v10177-011-0015-x.

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27 dBm Microwave Amplifiers with Adaptive Matching Networks The paper describes adaptive amplifier design with varactors and pin diodes as regulators of matching networks. As examples the two amplifiers with SHF-0189 HFET transistor and different matching sections were designed and manufactured. The output power level of 27 dBm and gain higher than 13 dB within L and S-band have been achieved. The amplifier design methodology is based on the small-signal approach and DC characteristics of transistors and regulators. Amplifier adaptivity allows us to remotely control the chosen parameters such

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13

Squartecchia, Michele, Tom K. Johansen, Jean-Yves Dupuy, et al. "Optimization of InP DHBT stacked-transistors for millimeter-wave power amplifiers." International Journal of Microwave and Wireless Technologies 10, no. 9 (2018): 999–1010. http://dx.doi.org/10.1017/s1759078718001137.

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AbstractIn this paper, we report the analysis, design, and implementation of stacked transistors for power amplifiers realized on InP Double Heterojunction Bipolar Transistors (DHBTs) technology. A theoretical analysis based on the interstage matching between all the single transistors has been developed starting from the small-signal equivalent circuit. The analysis has been extended by including large-signal effects and layout-related limitations. An evaluation of the maximum number of transistors for positive incremental power and gain is also carried out. To validate the analysis, E-band t

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14

Bayraktaroglu, Burhan, Kevin Leedy, and Robert Neidhard. "Microwave ZnO Thin-Film Transistors." IEEE Electron Device Letters 29, no. 9 (2008): 1024–26. http://dx.doi.org/10.1109/led.2008.2001635.

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15

Runham, M., and A. J. Baden Fuller. "Design of microwave transistors amplifiers." Computer-Aided Design 21, no. 2 (1989): 102–6. http://dx.doi.org/10.1016/0010-4485(89)90145-0.

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16

Sriram, S., R. R. Siergiej, R. C. Clarke, A. K. Agarwal, and C. D. Brandt. "SiC for Microwave Power Transistors." physica status solidi (a) 162, no. 1 (1997): 441–57. http://dx.doi.org/10.1002/1521-396x(199707)162:1<441::aid-pssa441>3.0.co;2-3.

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17

Wojtasiak, Wojciech, Marcin Góralczyk, Daniel Gryglewski, et al. "AlGaN/GaN High Electron Mobility Transistors on Semi-Insulating Ammono-GaN Substrates with Regrown Ohmic Contacts." Micromachines 9, no. 11 (2018): 546. http://dx.doi.org/10.3390/mi9110546.

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AlGaN/GaN high electron mobility transistors on semi-insulating bulk ammonothermal GaN have been investigated. By application of regrown ohmic contacts, the problem with obtaining low resistance ohmic contacts to low-dislocation high electron mobility transistor (HEMT) structures was solved. The maximum output current was about 1 A/mm and contact resistances was in the range of 0.3–0.6 Ω ·mm. Good microwave performance was obtained due to the absence of parasitic elements such as high access resistance.

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18

Vozniak, Oleksandr, and Andrii Shtuts. "CALCULATION OF NON-STANDARD W-PARAMETERS OF FOUR-POLE ON BIPOLAR TRANSISTORS." ENGINEERING, ENERGY, TRANSPORT AIC, no. 2(109) (August 27, 2020): 122–28. http://dx.doi.org/10.37128/2520-6168-2020-2-13.

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Improving the performance of microwave devices can be achieved both through the use of a fundamentally new element base, and through the use of new circuit designs. In this respect, the direction of use of the reactive properties of transistors as well as transistor structures with negative resistance for the construction of information-measuring systems and operating and computing devices of the microwave range is promising in this respect. In order to confirm the proposed methods, it is necessary to compare the results of the experimental studies using the proposed methods and means of measu

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19

MANOHAR, S., A. PHAM, J. BROWN, R. BORGES, and K. LINTHICUM. "MICROWAVE GaN-BASED POWER TRANSISTORS ON LARGE-SCALE SILICON WAFERS." International Journal of High Speed Electronics and Systems 13, no. 01 (2003): 265–75. http://dx.doi.org/10.1142/s0129156403001600.

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This paper presents the development of microwave Gallium nitride (GaN) heterostructure field-effect transistors (HFETs) on silicon (Si). GaN-on-Si provides a low-cost manufacturable platform that could lead to the commercialization of GaN-based power devices for wireless applications. Small periphery GaN high electron mobility transistors (HEMTs) on Si exhibited a maximum drain current of 900mA/mm, a peak gm of 300 mS/mm, and a microwave output power density of 1.5 W/mm at 2 GHz. Microwave characterization and device modeling of GaN HEMTs on Si are discussed.

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20

Pronić-Rančić, Olivera, Zlatica Marinković, and Vera Marković. "Bias Dependant Noise Wave Modelling Procedure of Microwave Fets." Journal of Electrical Engineering 63, no. 2 (2012): 120–24. http://dx.doi.org/10.2478/v10187-012-0018-6.

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Bias Dependant Noise Wave Modelling Procedure of Microwave Fets A new noise modelling procedure of microwave field-effect transistors (FETs) valid for various bias conditions is suggested in this paper. The proposed procedure is based on transistor noise wave model. With the aim to improve the noise wave model accuracy, the modification of the model is done by inclusion of the error correction functions into the noise wave model equations. It leads to significant reduction of deviations between measured and simulated noise parameters and therefore better noise prediction is achieved. It is als

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21

Tegegne, Zerihun Gedeb, Carlos Viana, Marc D. Rosales, et al. "An 850 nm SiGe/Si HPT with a 4.12 GHz maximum optical transition frequency and 0.805A/W responsivity." International Journal of Microwave and Wireless Technologies 9, no. 1 (2015): 17–24. http://dx.doi.org/10.1017/s1759078715001531.

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A 10 × 10 μm2SiGe heterojunction bipolar photo-transistor (HPT) is fabricated using a commercial technological process of 80 GHz SiGe bipolar transistors (HBT). Its technology and structure are first briefly described. Its optimal opto-microwave dynamic performance is then analyzed versus voltage biasing conditions for opto-microwave continuous wave measurements. The optimal biasing points are then chosen in order to maximize the optical transition frequency (fTopt) and the opto-microwave responsivity of the HPT. An opto-microwave scanning near-field optical microscopy (OM-SNOM) is performed u

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22

Min, Jin-Gi, Dong-Hee Lee, Yeong-Ung Kim, and Won-Ju Cho. "Implementation of Ambipolar Polysilicon Thin-Film Transistors with Nickel Silicide Schottky Junctions by Low-Thermal-Budget Microwave Annealing." Nanomaterials 12, no. 4 (2022): 628. http://dx.doi.org/10.3390/nano12040628.

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In this study, the efficient fabrication of nickel silicide (NiSix) Schottky barrier thin-film transistors (SB-TFTs) via microwave annealing (MWA) technology is proposed, and complementary metal-oxide-semiconductor (CMOS) inverters are implemented in a simplified process using ambipolar transistor properties. To validate the efficacy of the NiSix formation process by MWA, NiSix is also prepared via the conventional rapid thermal annealing (RTA) process. The Rs of the MWA NiSix decreases with increasing microwave power, and becomes saturated at 600 W, thus showing lower resistance than the 500

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23

Wu, Dong Yan, Zhi Liang Tan, Li Yun Ma, and Peng Hao Xie. "The Failure Modeling Analysis of Bipolar Silicon Transister Device Caused by ESD." Applied Mechanics and Materials 427-429 (September 2013): 929–32. http://dx.doi.org/10.4028/www.scientific.net/amm.427-429.929.

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With the development of electronic technology, the electronic threats faced by microwave semiconductor devices was increasingly serious.In order to study the electrostatic discharge damage mechanism of bipolar silicon transistors, this paper analyzed the basic physical characteristics of bipolar transistor in electrostatic discharge, such as kirk effect and current crowding effect. Through analysis the human body electrostatic discharge model, established the ESD electric injury model of bipolar silicon transistor. If we knew the production process parameter of devices, we can calculate the ES

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24

Sukhanov, M. A., A. K. Bakarov, and K. S. Zhuravlev. "AlSb/InAs Heterostructures for Microwave Transistors." Technical Physics Letters 47, no. 2 (2021): 139–42. http://dx.doi.org/10.1134/s1063785021020127.

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25

Pallecchi, E., C. Benz, A. C. Betz, H. v. Löhneysen, B. Plaçais, and R. Danneau. "Graphene microwave transistors on sapphire substrates." Applied Physics Letters 99, no. 11 (2011): 113502. http://dx.doi.org/10.1063/1.3633105.

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26

En-Jun Zhu, S. S. Zhang, W. W. Sheng, B. Z. Zhao, C. K. Xiong, and Y. S. Wang. "Amorphous Si/Si heterojunction microwave transistors." IEEE Electron Device Letters 10, no. 1 (1989): 4–6. http://dx.doi.org/10.1109/55.31663.

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27

Johnson, G. A., V. J. Kapoor, M. Shokrani, et al. "Indium gallium arsenide microwave power transistors." IEEE Transactions on Microwave Theory and Techniques 39, no. 7 (1991): 1069–75. http://dx.doi.org/10.1109/22.85371.

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28

van der Ziel, A., and T. G. M. Kleinpenning. "High-frequency response of microwave transistors." Solid-State Electronics 30, no. 7 (1987): 771–72. http://dx.doi.org/10.1016/0038-1101(87)90118-3.

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29

Manscher, M. H., M. T. Savolainen, and J. Mygind. "Microwave enhanced cotunneling in SET transistors." IEEE Transactions on Appiled Superconductivity 13, no. 2 (2003): 1107–10. http://dx.doi.org/10.1109/tasc.2003.814167.

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30

Yang, Jing Wei, and Meng Meng Xu. "Failure Model Research of Power HBTs." Advanced Materials Research 926-930 (May 2014): 1348–51. http://dx.doi.org/10.4028/www.scientific.net/amr.926-930.1348.

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Heterojunction bipolar transistors (HBTs) are playing an important role in microwave and power applications. When HBTs operated at high power, the power dissipation and self-heating effects will enable the generation of electrical properties in the transistor failure. The failure experiment system of microwave power HBTs was established. Based on this system, the changes of electrical parameters of HBTs in deferent stress, such as Gummel plots, base current various different base-emitter voltage and base-collector voltage, were measured and analyzed. At the same time, the failure of base curre

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31

Kim, Kyongmin, Eunkyeom Kim, Youngill Kim, and Kyoungwan Park. "Characteristics of ZnO Thin Film Transistors Fabricated Using a Microwave Sol-Gel Method." Korean Journal of Metals and Materials 52, no. 2 (2014): 155–61. http://dx.doi.org/10.3365/kjmm.2014.52.2.155.

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32

RAJAN, SIDDHARTH, UMESH K. MISHRA, and TOMÁS PALACIOS. "AlGaN/GaN HEMTs: RECENT DEVELOPMENTS AND FUTURE DIRECTIONS." International Journal of High Speed Electronics and Systems 18, no. 04 (2008): 913–22. http://dx.doi.org/10.1142/s0129156408005874.

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This paper provides an overview of recent work and future directions in Gallium Nitride transistor research. We discuss the present status of Ga -polar AlGaN / GaN HEMTs and the innovations that have led to record RF power performance. We describe the development of N -polar AlGaN / GaN HEMTs with microwave power performance comparable with state-of-art Ga -polar AlGaN / GaN HEMTs. Finally we will discuss how GaN -based field effect transistors could be promising for a less obvious application: low-power high-speed digital circuits.

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33

Aronov, V. L., E. M. Savchenko, D. M. Moseykin, A. D. Pershin, and D. G. Drozdov. "ANALYSIS OF THE CONDITIONS OF OCCURRENCE AND SUPPRESSION OF LATERAL VIBRATIONS IN MICROWAVE POWER FETS." Electronic engineering Series 2 Semiconductor devices 258, no. 3 (2020): 4–21. http://dx.doi.org/10.36845/2073-8250-2020-258-3-4-21.

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Lateral instability is inherent in power transistors structures, consisting of several simple transistors connected in parallel. The large number of transistor elements complicates the analysis of such instability. The introduction of suppressing resistors makes it possible to prevent the occurrence of lateral oscillations, however there are no unambiguous criteria for achieving stability this way. The matter is further complicated by the fact that transistor exhibits nonlinear operation in a typical amplifier stage, and the operating conditions in many cases correspond to a relatively wide ra

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34

Solodukha, V. A., Yu P. Snitovsky, and Ya A. Solovyov. "CONTROLLED PROCESSES OF THE PARAMETERS TRANSFORMATION BY ION BEAMS IN SILICON BIPOLAR MICROWAVE TRANSISTORS." Yugra State University Bulletin 14, no. 4 (2018): 23–37. http://dx.doi.org/10.17816/byusu20180423-37.

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The paper considers the formation of a transition layer of Mo - Si contacts, as well as the effect of Mo film deposition regimes and methods of heat treatment of contacts. It was found that when forming contacts of microwave transistors, by deposition of a Mo film on the surface of an epitaxial silicon layer, the structure of the latter depends on the dose of doping with phosphorus ions and on the temperature of post-implantation annealing. The results of experiments and two-dimensional physico-mathematical modeling to study the dependence of the parameters of test samples of the KT916A transi

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35

Gladysheva, Nadezhda B., Vadim V. Gruzdov, Yurii V. Kolkovskii, Yulii A. Kontsevoy, and Evgenii F. Pevtsov. "Control of yellow photoluminescence in AlGaN/GaN heterostructures." Modern Electronic Materials 5, no. 2 (2019): 87–89. http://dx.doi.org/10.3897/j.moem.5.2.51391.

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Photoluminescence with the peak corresponding to yellow color of the visible spectrum (so-called yellow luminescence) originates from deep levels in the GaN buffer layers of heterostructures and depends on heterostructure growth conditions. In turn deep levels affect the resistance of Ohmic contacts of microwave transistors fabricated from these heterostructures. This determines the reliability of GaN microwave transistor operation. Two types of units for control of photoluminescence with the peak in the yellow visible spectral region have been designed with the aim to control the quality of A

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Fadil, Dalal, Vikram Passi, Wei Wei, et al. "A Broadband Active Microwave Monolithically Integrated Circuit Balun in Graphene Technology." Applied Sciences 10, no. 6 (2020): 2183. http://dx.doi.org/10.3390/app10062183.

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This paper presents the first graphene radiofrequency (RF) monolithic integrated balun circuit. It is composed of four integrated graphene field effect transistors (GFETs). This innovative active balun concept takes advantage of the GFET ambipolar behavior. It is realized using an advanced silicon carbide (SiC) based bilayer graphene FET technology having RF performances of about 20 GHz. Balun circuit measurement demonstrates its high frequency capability. An upper limit of 6 GHz has been achieved when considering a phase difference lower than 10° and a magnitude of amplitude imbalance less th

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Sun, Jie, Wei Ming Shi, Wei Guang Yang, Ping Sheng Zhou, and Lin Jun Wang. "Ni-Induced Lateral Fast Crystallization of Amorphous Silicon Film by Microwave Annealing." Advanced Materials Research 337 (September 2011): 133–37. http://dx.doi.org/10.4028/www.scientific.net/amr.337.133.

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Polycrystalline Si (poly-Si) thin films for application to display devices and solar cell are generally fabricated by crystallizing amorphous Si (a-Si) thin film precursors. In this paper, studies on Ni-induced lateral crystallization of a-Si thin films by microwave annealing at low temperature were reported. The crystallization of a-Si thin films was enhanced by applying microwaves to the films. The poly-Si films were invested by Optical Microscopy, X-ray Diffraction (XRD) , Raman Spectroscopy and Scanning Electron Microscope(SEM). After processing of Ni-induced lateral crystallization by mic

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38

Sleptsova, Anastasia A., Sergey V. Chernykh, Dmitry A. Podgorny, and Ilya A. Zhilnikov. "Optimization of passivation in AlGaN/GaN heterostructure microwave transistor fabrication by ICP CVD." Modern Electronic Materials 6, no. 2 (2020): 71–75. http://dx.doi.org/10.3897/j.moem.6.2.58860.

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We have studied the effect of silicon nitride (SiN) dielectric passivating film deposition by inductively coupled plasma chemical vapor deposition (ICP CVD) on the parameters of AlGaN/GaN heterostructure high electron mobility transistors (HEMT). Study of the parameters of the dielectric layers has allowed us to determine the effect of RF and ICP power and working gas flow ratio on film growth rate and structural perfection, and on the current vs voltage curves of the passivated HEMT. The deposition rate changes but slightly with an increase in RF power but increases with an increase in ICP po

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39

Wozniak, Oleksandr, Andriy Vidmysh, and Andriy Stuts. "INVESTIGATION OF THE GRAPHOANALYTICAL METHOD OF DETERMINING THE STANDARD W-PARAMETERS OF THE FOUR-POLE." ENGINEERING, ENERGY, TRANSPORT AIC, no. 4(107) (December 20, 2019): 67–78. http://dx.doi.org/10.37128/2520-6168-2019-4-9.

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The level of social and economic development of modern society is determined by the volume, speed and quality of information processing by methods and technical means. Measurement and information processing systems are becoming an integral part of production automation. The development of radio electronics is inextricably linked with the development of measurements, and the state of modern radio electronics is largely determined by the level of development of measurement methods and the availability of sufficiently advanced measuring equipment to measure the parameters of radio-electronic devi

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40

ISHIBASHI, T., Y. YAMAUCHI, E. SANO, H. NAKAJIMA, and Y. MATSUOKA. "BALLISTIC COLLECTION TRANSISTORS AND THEIR APPLICATIONS." International Journal of High Speed Electronics and Systems 05, no. 03 (1994): 349–79. http://dx.doi.org/10.1142/s0129156494000152.

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We describe the design, fabrication and application of ballistic collection transistors (BCTs) in which electron velocity overshoot is introduced in the collector of a GaAs-based heterojunction bipolar transistor. The guideline for the BCT design is the effective confinement of electrons to the Γ-valley, as simulated by Monte Carlo analysis, and the control of electron energy is accomplished basically with an i-p+-n+ doping profile. Microwave characterization demonstrates the existence of significant overshoot and cutoff frequencies higher than 100 GHz at collector current densities in the mid

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41

Dai, Z. R., Sangbeom Kang, W. Alan Doolittle, Z. L. Wang, and April S. Brown. "Interfacial Structure and Defects in GaN/AlGaN Heterojunction Epitaxially Grown on LiGa02 Substrate by Molecular Beam Epitaxy." Microscopy and Microanalysis 6, S2 (2000): 1106–7. http://dx.doi.org/10.1017/s1431927600038022.

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The performance of III-Nitride based Light Emitting Diodes (LEDs), LASERs, GaN/AlGaN MODFETs (Modulation-doped Field Effect Transistors) and HEMTs (High Electron Mobility Transistors) have been improved dramatically over the past few years [1,2], despite the relatively poor material quality of GaN, as compared to GaAs, for example. The intrinsic properties of the materials system make it extremely well suited to both optoelectronic and microwave power transistor applications. Typically, GaN is grown on substrates such as GaAs, Al2O3 (sapphire) or SiC with large lattice mismatch. This has usual

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Hanreich, G., M. Mayer, M. Mündlein, and J. Nicolics. "Thermal Investigation of GaAs Microwave Power Transistors." Journal of Microelectronics and Electronic Packaging 1, no. 1 (2004): 1–8. http://dx.doi.org/10.4071/1551-4897-1.1.1.

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The lower thermal conductivity of gallium arsenide (GaAs) compared to silicon (Si) requires a careful thermal design for optimizing device performance and reliability. In this paper a recently developed thermal simulation tool (TRESCOM II) is applied for investigating the thermal behavior of a heterojunction GaAs power field effect transistor (FET). Main features of the simulation tool are an easy model creation procedure and an efficient numerical solver. Moreover, the tool allows to consider temperature dependent material properties and temperature dependent boundary conditions. The investig

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Gruzdov, V. V., K. L. Enisherlova, and Yu V. Kolkovskiy. "COMPARATIVE ANALYSIS OF AlGaN/GaN MICROWAVE TRANSISTORS." Electronic engineering. Series 2. Semiconductor device 245, no. 2 (2017): 6–13. http://dx.doi.org/10.36845/2073-8250-2017-245-2-6-13.

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Klimov, A. O., and K. A. Ivanov. "MOUNT TECHNIQUE OF GAN POWER MICROWAVE TRANSISTORS." Electronic Enginering.Semiconductor Devices 252, no. 1 (2019): 57–67. http://dx.doi.org/10.36845/2073-8250-2019-252-1-57-67.

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Zarate-de Landa, Andres, Jose Zuniga-Juarez, Jose Loo-Yau, J. Reynoso-Hernandez, Maria Maya-Sanchez, and Juan del Valle-Padilla. "Advances in Linear Modeling of Microwave Transistors." IEEE Microwave Magazine 10, no. 2 (2009): 100, 102–111, 146. http://dx.doi.org/10.1109/mmm.2008.931675.

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Lunardi, L. M., S. Sen, F. Capasso, P. R. Smith, D. L. Sivco, and A. Y. Cho. "Microwave multiple-state resonant tunneling bipolar transistors." IEEE Electron Device Letters 10, no. 5 (1989): 219–21. http://dx.doi.org/10.1109/55.31726.

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Tsai, Jung-Hui, Shao-Yen Chiu, Wen-Shiung Lour, et al. "Microwave complementary doped-channel field-effect transistors." Superlattices and Microstructures 45, no. 1 (2009): 33–38. http://dx.doi.org/10.1016/j.spmi.2008.11.019.

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Taniuchi, Hirotada, Hitoshi Umezawa, Hiroaki Ishizaka, and Hiroshi Kawarada. "Microwave Performance of Diamond Field-Effect Transistors." Japanese Journal of Applied Physics 41, Part 1, No. 4B (2002): 2591–94. http://dx.doi.org/10.1143/jjap.41.2591.

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Escotte, L., J. P. Roux, R. Plana, J. Graffeuil, and A. Gruhle. "Noise modeling of microwave heterojunction bipolar transistors." IEEE Transactions on Electron Devices 42, no. 5 (1995): 883–89. http://dx.doi.org/10.1109/16.381984.

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Hobart, K. D., F. J. Kub, N. A. Papanicoloau, W. Kruppa, and P. E. Thompson. "heterojunction bipolar transistors for microwave power applications." Journal of Crystal Growth 157, no. 1-4 (1995): 215–21. http://dx.doi.org/10.1016/0022-0248(95)00388-6.

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