Relevant bibliographies by topics / MIS devices

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  1. Dissertations / Theses

Academic literature on the topic 'MIS devices'

Author: Grafiati
Published: 26 July 2024
Last updated: 28 July 2024

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Dissertations / Theses on the topic "MIS devices"

1

Torres, Almarza Ignacio. "Interfacial effects in polymer MIS devices." Thesis, Bangor University, 2004. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.409836.

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2

Thomas, Nicholas John. "GaAs/Langmuir-Blodgett film MIS devices." Thesis, Durham University, 1986. http://etheses.dur.ac.uk/6829/.

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Langmuir-Blodgett (LB) films have previously been used as organic insulating layers in compound semiconductor metal-insulator- semiconductor devices, with promising preliminary results. This thesis describes the first investigation of the use of LB films In gallium arsenide metal-insulator-semiconductor devices. Diodes incorporating thin layers of w-tricosenoic acid or substituted copper phthalocyanine possessed 'leaky' electrical characteristics, i.e. there is some conduction through the LB film. This 'leaky' behaviour was exploited to produce the first metal- Insulator-semiconductor-switch (
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3

Clifton, Paul Alan. "Characterisation of silicon MIS negative resistance devices." Thesis, Durham University, 1989. http://etheses.dur.ac.uk/6434/.

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Metal-insulator-semiconductor switches (MISS), in which the T denotes some form of thin semi-insulating layer and the semiconductor part consists of a pn junction, are part of the general class of regenerative switching devices which includes the thyristor. The switching behaviour of the MISS derives from the ability of the MIS junction to exhibit current gain and to exist in two modes, deep depletion and inversion. In this thesis, a general model for the regenerative switching is proposed after investigating the properties of the MIS junction both theoretically and experimentally. Results fro
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4

Holman, Brian. "The electrical characterization of tantalum capacitors as MIS devices." Connect to this title online, 2008. http://etd.lib.clemson.edu/documents/1219849377/.

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5

Lancaster, Janet. "Organic MIS Devices Based on a High-k Dielectric." Thesis, Bangor University, 2010. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.520852.

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6

Evans, N. J. "Influence of gases on the electrical properties of MIS devices." Thesis, Durham University, 1986. http://etheses.dur.ac.uk/6866/.

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This thesis studies the effects of gas ambients on the electrical properties of the insulator-semiconductor interface of a MIS capacitor. A microcomputer-controlled instrumentation system has been developed to extract this information from measurement of the a.c. admittance of MOS or MIS devices. The system incorporates several novel developments in circuitry and software which enable these admittance data to be automatically collected and processed in the frequency domain by remote recalibration of the instrumentation. This advancement permits interface state density information to be calcula
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7

Usman, Muhammad. "Impact of Ionizing Radiation on 4H-SiC Devices." Doctoral thesis, KTH, Integrerade komponenter och kretsar, 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-60763.

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Electronic components, based on current semiconductor technologies and operating in radiation rich environments, suffer degradation of their performance as a result of radiation exposure. Silicon carbide (SiC) provides an alternate solution as a radiation hard material, because of its wide bandgap and higher atomic displacement energies, for devices intended for radiation environment applications. However, the radiation tolerance and reliability of SiC-based devices needs to be understood by testing devices  under controlled radiation environments. These kinds of studies have been previously p
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8

Noborio, Masato. "Fundamental Study on SiC Metal-Insulator-Semiconductor Devices for High-Voltage Power Integrated Circuits." 京都大学 (Kyoto University), 2009. http://hdl.handle.net/2433/78006.

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9

Fontaine, Lya. "Développement de briques technologiques pour la réalisation de composants de puissance MOS sur diamant." Thesis, Toulouse 3, 2020. http://www.theses.fr/2020TOU30060.

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Un des défis de notre époque est lié à la production et à la gestion de l'énergie électrique. Dans ce cadre, l'amélioration des composants à semi-conducteurs de puissance est une des clés pour répondre à ce défi. La grande majorité des composants de puissance actuels sont réalisés à base de silicium. Cependant, les exigences des applications de l'électronique de puissance en termes de tenue en tension, de densité de puissance, de température et de fréquence de commutation sont de plus en plus élevées. Les propriétés physiques intrinsèques des semiconducteurs à large bande interdite (SiC, GaN,
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10

Pace, Bedetti Horacio Martin. "The effect of "Postural Freedom" in laparoscopic surgery." Doctoral thesis, Universitat Politècnica de València, 2019. http://hdl.handle.net/10251/122312.

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[ES] La cirugía laparoscopia está considerada uno de los principales avances quirúrgicos en las últimas décadas. Esta técnica ha demostrado numerosas ventajas comparadas con la cirugía convencional abierta y ha sido extensamente usada para procesos quirúrgicos en el área abdominal. Para el paciente, la cirugía laparoscópica supone diversas ventajas, como por ejemplo menor dolor post operativo, tiempos de recuperación menores, menor riesgo de infección, o reducción del trauma. Para el cirujano en cambio, la situación es completamente diferente, esta práctica requiere mayor esfuerzo, concentrac
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