Relevant bibliographies by topics / MMIC amplifier

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'MMIC amplifier'

Author: Grafiati
Published: 4 June 2021
Last updated: 5 February 2022

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Journal articles on the topic "MMIC amplifier"

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Schuh, Patrick, Hardy Sledzik, Rolf Reber, et al. "X-band T/R-module front-end based on GaN MMICs." International Journal of Microwave and Wireless Technologies 1, no. 4 (2009): 387–94. http://dx.doi.org/10.1017/s1759078709990389.

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Amplifiers for the next generation of T/R modules in future active array antennas are realized as monolithically integrated circuits (MMIC) on the basis of novel AlGaN/GaN (is a chemical material description) high electron mobility transistor (HEMT) structures. Both low-noise and power amplifiers are designed for X-band frequencies. The MMICs are designed, simulated, and fabricated using a novel via-hole microstrip technology. Output power levels of 6.8 W (38 dBm) for the driver amplifier (DA) and 20 W (43 dBm) for the high-power amplifier (HPA) are measured. The measured noise figure of the low-noise amplifier (LNA) is in the range of 1.5 dB. A T/R-module front-end with mounted GaN MMICs is designed based on a multi-layer low-temperature cofired ceramic technology (LTCC).
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Schmid, Ulf, Rolf Reber, Sébastien Chartier, et al. "GaN devices for communication applications: evolution of amplifier architectures." International Journal of Microwave and Wireless Technologies 2, no. 1 (2010): 85–93. http://dx.doi.org/10.1017/s1759078710000218.

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This paper presents the design and implementation of power amplifiers using high-power gallium nitride (GaN) high electronic mobility transistor (HEMT) powerbars and monolithic microwave integrated circuits (MMICs). The first amplifier is a class AB implementation for worldwide interoperability for microwave access (WiMAX) applications with emphasis on a low temperature cofired ceramics (LTCC) packaging solution. The second amplifier is a class S power amplifier using a high power GaN HEMT MMIC. For a 450 MHz continuous wave (CW) signal, the measured output power is 5.8 W and drain efficiency is 18.5%. Based on time domain simulations, loss mechanisms are identified and optimization steps are discussed.
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Darwish, Ali M., H. Alfred Hung, Edward Viveiros, and Amr A. Ibrahim. "Broadband AlGaN/GaN MMIC amplifier." International Journal of Microwave and Wireless Technologies 3, no. 4 (2011): 399–404. http://dx.doi.org/10.1017/s1759078711000195.

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A broadband Monolithic Microwave Integrated Circuit (MMIC) amplifier, with 12 ± 2 dB gain across the 0.1–27 GHz band has been demonstrated using the AlGaN/GaN on SiC technology. The amplifier design employs a non-conventional, series-DC/RF-High Electron Mobility Transistor (HEMT) configuration. This configuration provides an alternative design to the conventional traveling-wave amplifier (TWA). It results in a smaller MMIC chip size, and extends amplifier gain to the low-frequency region. The amplifier MMIC utilizes four HEMT devices in series and could be biased at voltages up to 120 V.
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Makri, R., M. Gargalakos, and N. K. Uzunoglu. "Design and Development of Monolithic Microwave Integrated Amplifiers and Coupling Circuits for Telecommunication Systems Applications." Active and Passive Electronic Components 25, no. 1 (2002): 1–22. http://dx.doi.org/10.1080/08827510211275.

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Recent advances in printed circuit and packaging technology of microwave and millimeter wave circuits result to the increasing use of MMICs in telecommunication systems. At Microwave and Fiber Optics Lab of NTUA several designs of various MMICs were conducted using the HP Eesof CAD Tool and FET and HEMT models of F20 and H40 GaAs foundry process of GEC Marconi. The designed MMICs are constructed in Europractice Organization while on-wafer probe measurements are performed in the Lab. In that framework, MMIC technologies are employed in the design of power and low noise amplifiers and couplers to be used for mobile and wireless communications as well as remote sensing and radar applications. A medium power linear FET amplifier has been designed with combining techniques on a single chip. The circuit operates at 14.4–15.2 GHz with an input power of−15dB m, a 36 dB total gain, while the input and output VSWR is less than 1.6. Due to high cost of MMIC fabrication only the first subunit was manufactured and tests verified the simulation results. Additionally, novel techniques have been used for the design of two coupling networks at 10 GHz in order to minimize the area occupied. A meander-kind design as well as shunt capacitors were implemented for a90°quadrature coupler and a Wilkinson one in order to reduce size. Finally, a two stages low noise amplifier was designed with the use of H40 GaAs process in order the differences between the relevant designs to be explored. The key specifications for this MMIC LNA include operation at 10 GHz with a total gain of 17 dB while the noise figure is less than 1.5 dB.
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Ouyang, Si Hua, Ming Zeng Peng, Jin Wu, Yan Kui Li, and Xin Yu Liu. "Multistage MMIC Power Amplifier Automatic Testing System." Applied Mechanics and Materials 241-244 (December 2012): 227–33. http://dx.doi.org/10.4028/www.scientific.net/amm.241-244.227.

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Based on GaN HEMT the monolithic microwave power amplifier (MMIC) with great advantages of high operating voltage, high output power, wide frequency bandwidth and small features loss has been widely used in phased-array radar, aerospace, missile interception system. However, MMIC test has many disadvantages, such as, including many microwave instruments, test process is complex, manual operate lots of instruments, and write down test data, result in slowed down test process. In the paper, it introduces a new system by ourselves. This can simplify the MMIC test process, and free ourselves from heavy test task, and focus the performance of circuit. It realizes the automatic test and proves it using a based on GaN HEMT 2×4 MMIC circuit.
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Sieth, Matthew, Sarah Church, Judy M. Lau, et al. "Technology developments for a large-format heterodyne MMIC array at W-band." International Journal of Microwave and Wireless Technologies 4, no. 3 (2012): 299–307. http://dx.doi.org/10.1017/s1759078712000293.

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We report on the development of W-band (75–110 GHz) heterodyne receiver technology for large-format astronomical arrays. The receiver system is designed to be both mass producible, so that the designs could be scaled to thousands of receiver elements, and modular. Most of the receiver functionality is integrated into compact monolithic microwave integrated circuit (MMIC) amplifier-based multichip modules. The MMIC modules include a chain of InP MMIC low-noise amplifiers, coupled-line bandpass filters, and sub-harmonic Schottky diode mixers. The receiver signals will be routed to and from the MMIC modules on a multilayer high-frequency laminate, which includes splitters, amplifiers, and frequency triplers. A prototype MMIC module has exhibited a band-averaged noise temperature of 41 K from 82 to 100 GHz and a gain of 29 dB at 15 K, which is the state-of-the-art for heterodyne multichip modules.
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Moronval, Xavier, Reza Abdoelgafoer, and Adeline Déchansiaud. "MMIC-based asymmetric Doherty power amplifier for small cells applications." International Journal of Microwave and Wireless Technologies 7, no. 5 (2014): 499–505. http://dx.doi.org/10.1017/s1759078714000737.

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We present the results obtained on a multi-mode multi-band 20 W Monolithic Microwave Integrated Circuit (MMIC) power amplifier. The proposed two-stage circuit is based on the silicon Laterally Diffused Metal Oxide Semiconductor (LDMOS) technology. Thanks to dedicated design techniques, it can cover the Digital Cellular Service (DCS), Personal Communications Service (PCS), and UMTS bands (ranging from 1.805 to 2.17 GHz) and deliver more than 20 W of output power, 30 dB of gain and 50% of power added efficiency. When combined in a Doherty configuration with an incremental 40 W MMIC in a dual-path package, the resulted asymmetric MMIC (an industry first) can deliver an unprecedented LDMOS MMIC efficiency of up to 44% at 8 dB back-off in the UMTS band. Then, the DPA has been optimized in conjunction with a novel RF pre-distortion technique, leading to 33–80% energy saving at the system level.
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Elkhaldi, Said, Naima Amar Touhami, Mohamed Aghoutane, and Taj-Eddin Elhamadi. "LINC Method for MMIC Power Amplifier Linearization." Recent Advances in Electrical & Electronic Engineering (Formerly Recent Patents on Electrical & Electronic Engineering) 12, no. 5 (2019): 402–7. http://dx.doi.org/10.2174/2352096511666180611101146.

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Background: This article proposes the design and implementation of a MMIC (monolithic microwave integrated circuits) Power amplifier using the ED02AH process. Methods: The MMIC ED02AH technology have been developed specifically for microwave applications up to millimeter waves, and for high-speed digital circuits. The use of a single branch of a power amplifier can produce high distortion. In the present paper, the Linear amplification with nonlinear components (LINC) method is introduced and applied as a solution to linearize the power amplifier, it can simultaneously provide high efficiency and high linearity. To validate the proposed approach, the design and characterization of a 5.25 GHz LINC Power Amplifier on MMIC technology is presented. Results: Good results have been achieved, and an improvement of about 37.50 dBc and 59 dBc respectively is obtained for the Δlower C/I and Δupper C/I at 5.25 GHz. Conclusion: As a result of this method, we can reduce the Carrier Power to Third-Order Intermodulation Distortion Power Ratio. Excellent linearization is obtained almost 37.6 dBc for Δlower C/I and 58.8 dBc for Δupper C/I.
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SCHLECHTWEG, M. "HIGH FREQUENCY CIRCUITS BASED ON GaAs PHEMT TECHNOLOGY FOR MODERN SENSOR AND COMMUNICATION SYSTEMS." International Journal of High Speed Electronics and Systems 10, no. 01 (2000): 393–411. http://dx.doi.org/10.1142/s0129156400000404.

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For sensor and communication system applications, monolithic microwave integrated circuits (MMICs) feature performance, functionality, reliability, and competitive price. In this paper, the potential of PHEMT ICs for communication and sensor applications up to 100 GHz is discussed. Specifically, I will address the application of coplanar waveguide technology for rf ICs, millimeter-wave multifunctional ICs and power amplifiers, as well as mixed-signal ICs and OEICs. A 77-GHz transceiver MMIC designed for automotive collision avoidance radar is presented as an example of a very compact, multifunctional mm-wave chip. A chip set for active and passive imaging at 94 GHz includes low noise and high gain amplifiers, low phase noise oscillators, and phase shifters. An FMCW module is conceived for material characterization. A family of coplanar power amplifier MMICs for wireless communication in the range of 20 to 60 GHz with output powers up to 1 W is presented. Finally, integrated circuits for high-speed data transmission at 40 Gbit/s will be discussed.
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Yu, C., Z. Z. He, Q. B. Liu, et al. "Graphene Amplifier MMIC on SiC Substrate." IEEE Electron Device Letters 37, no. 5 (2016): 684–87. http://dx.doi.org/10.1109/led.2016.2544938.

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Dissertations / Theses on the topic "MMIC amplifier"

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Caglar, Baris. "Millimeter Wave Mmic Amplifier Linearization By Predistortion." Master's thesis, METU, 2007. http://etd.lib.metu.edu.tr/upload/12607951/index.pdf.

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For millimeter wave applications, MMIC is the best contemporary technology. Considering the requirements of the commercial and military applications on amplitude and phase linearity, it is necessary to reduce the nonlinearity of the amplifiers. There are several linearization techniques that are used to reduce the nonlinearity effects. In the context of the thesis, a special analog predistortion technique that is called &ldquo<br>self cancellation scheme&rdquo<br>is used to linearize a 35GHz MMIC amplifier. The amplifier to be linearized is used in the design of the predistorter, that is why it is called self cancellation. This thesis contain the design of the amplifier, lumped element power divider and combiner circuits, and the complete analog predistortion linearizer. Layouts of linearizer system and its components are prepared and layout effects are taken into account.
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Parks, Gillian. "An expert system for MMIC amplifier design." Thesis, Queen's University Belfast, 1993. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.359119.

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Altuntas, Mehmet. "Mmic Vector Modulator Design." Master's thesis, METU, 2004. http://etd.lib.metu.edu.tr/upload/12605684/index.pdf.

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In this thesis the design of a MMIC vector modulator operating in 9GHz-10GHz band is investigated and performed. Sub-sections of the vector modulator are 4-port (4.8dB) 1200 phase shift relative to the dedicated port power splitter, digitally controlled variable gain amplifier and the in phase power combiner. Alternative methods are searched in order to implement the structure properly in the given frequency band. The final design is appropriate for MMIC structure. 4-port (4.8dB) 1200 phase shift relative to the dedicated port power splitter is studied. The performance is simulated and optimized first on Microwave Office, then on Advanced Design System (ADS) tools. Various methods to design a digitally controlled variable gain amplifier are studied. The final topology is simulated and optimized on ADS tool. An in phase power combiner is designed. The performance of the combiner is simulated and optimized on ADS tool. Lumped element models are replaced with CASWELL H-40 models to achieve a MMIC structure and a layout is drawn. The finalized vector modulator is simulated and optimized on ADS tool. Key words: MMIC, Vector Modulator, Digitally Controlled Variable Gain Amplifier, Layout
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Seneviratne, Sashieka. "Efficiency Enhancement of Pico-cell Base Station Power Amplifier MMIC in GaN HFET Technology Using the Doherty Technique." Thèse, Université d'Ottawa / University of Ottawa, 2012. http://hdl.handle.net/10393/23078.

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With the growth of smart phones, the demand for more broadband, data centric technologies are being driven higher. As mobile operators worldwide plan and deploy 4th generation (4G) networks such as LTE to support the relentless growth in mobile data demand, the need for strategically positioned pico-sized cellular base stations known as ‘pico-cells’ are gaining traction. In addition to having to design a transceiver in a much compact footprint, pico-cells must still face the technical challenges presented by the new 4G systems, such as reduced power consumptions and linear amplification of the signals. The RF power amplifier (PA) that amplifies the output signals of 4G pico-cell systems face challenges to minimize size, achieve high average efficiencies and broader bandwidths while maintaining linearity and operating at higher frequencies. 4G standards as LTE use non-constant envelope modulation techniques with high peak to average ratios. Power amplifiers implemented in such applications are forced to operate at a backed off region from saturation. Therefore, in order to reduce power consumption, a design of a high efficiency PA that can maintain the efficiency for a wider range of radio frequency signals is required. The primary focus of this thesis is to enhance the efficiency of a compact RF amplifier suitable for a 4G pico-cell base station. For this aim, an integrated two way Doherty amplifier design in a compact 10mm x 11.5mm monolithic microwave integrated circuit using GaN device technology is presented. Using non-linear GaN HFETs models, the design achieves high effi-ciencies of over 50% at both back-off and peak power regions without compromising on the stringent linearity requirements of 4G LTE standards. This demonstrates a 17% increase in power added efficiency at 6 dB back off from peak power compared to conventional Class AB amplifier performance. Performance optimization techniques to select between high efficiency and high linearity operation are also presented. Overall, this thesis demonstrates the feasibility of an integrated HFET Doherty amplifier for LTE band 7 which entails the frequencies from 2.62-2.69GHz. The realization of the layout and various issues related to the PA design is discussed and attempted to be solved.
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Gholami, Mehrdad. "A C-Band Compact High Power Active Integrated Phased Array Transmitter Module Using GaN Technology." Thesis, Université d'Ottawa / University of Ottawa, 2017. http://hdl.handle.net/10393/36045.

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In this research, an innovative phased array antenna module is proposed to implement a high-power, high-efficient and compact C-band radio transmitter. The module configuration, which can be integrated into front-end circuits, was designed as planar layers stacked up together to form a metallic cube. The layers were fabricated by using a Computer Numerical Control (CNC) milling machine and screwed together. The antenna parts and the amplifier units were designed at two opposite sides of the cube to spread the dissipated heat produced by the amplifiers and act as a heat sink. Merging the antenna parts with the amplifier circuits offers additional advantages such as decreasing the total power loss, mass, and volume of the transmitter modules by removing the extra power divider and combiner networks and connectors between them as well as reducing the total signal path. To achieve both a maximum possible radiation efficiency and high directivity, the aperture waveguide antenna was selected as the array element. Four antenna elements have been located in a cavity to be excited equally and the cavity is excited through a slot on its underside so a compact subarray is formed. Antenna measurements demonstrated a 15.5 dBi gain and 20 dB return loss at 10 % fractional bandwidth centered around 5.8 GHz and with more than 98% radiation efficiency. The total dimensions of the subarray are approximately 8*12*4 cm3. The outcoming signal from the amplifiers is transferred into the slot exciting the subarray through a microstrip-to-waveguide transition (MWT). A novel and robust MWT structure was designed for the presented application. The MWT was also integrated with a microstrip coupler to monitor the power from the amplifier output. The measured insertion loss of the MWT along with the microstrip coupler was less than 0.25 dB along with more than 20 dB return loss within the same bandwidth of the subarray. The microstrip coupler shows 38 dB of coupling and more than 48 dB of isolation with negligible effects on the amplifier output signal and the insertion/return loss of the MWT. The amplifier subcomponents consist of power combiners/dividers (PCDs), high power amplifiers (HPAs) and bias circuitry. A Monolithic Microwave Integrated Circuit (MMIC) three-stage HPA was designed in a commercially available 0.15 um AlGaN/GaN HEMT technology provided by National Research Council Canada (NRC) and occupies an area of 4.7*3.7 mm2. To stabilize the HPA, a novel inductive degeneration technique was successfully used. To the best of the author’s knowledge, this is the first time this technique has been used to stabilize HPAs. Careful considerations on input/output impedances of all HEMTs were taken into account to prevent parametric oscillations. Other instability sources, i.e. odd-mode, even-mode, and low frequency (bias circuit) oscillations were also prevented by designing the required stabilization circuits. The electromagnetic simulation of the HPA shows 35 W (45.5 dBm) of saturated output power, 26 dB large signal gain and 29% power added efficiency within the same operating bandwidth as the subarray. The output distortion is less than 27 dB, indicating that the HPA is highly linear. The PCD was designed by utilizing a novel, enhanced configuration of a Gysel structure implemented on Rogers RT-Duroid5880. The insertion loss of the Gysel is less than 0.2 dB while return loss and isolation are greater than 20 dB over the entire bandwidth. The same subarray area (8*12 cm2) has been used for the amplifier circuits and up to eight HPAs can be included in each module. All the above parts of the transmitter module were fabricated and measured, except the MMIC-HPA.
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Shinghal, Priya. "Ultra-broadband GaAs pHEMT MMIC cascode Travelling Wave Amplifier (TWA) design for next generation instrumentation." Thesis, University of Manchester, 2016. https://www.research.manchester.ac.uk/portal/en/theses/ultrabroadband-gaas-phemt-mmic-cascode-travelling-wave-amplifier-twa-design-for-next-generation-instrumentation(37fc42a1-d865-4ee9-bd19-35b5699249b2).html.

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Ultra-broadband Monolithic Microwave Integrated Circuit (MMIC) amplifiers find applications in multi-gigabit communication systems for 5G and millimeter wave measurement instrumentation systems. The aim of the research was to achieve maximum bandwidth of operation of the amplifier from the foundry process used and high reverse isolation ( < -25.0 dB) across the whole bandwidth. To achieve this, several design variations of DC - 110 GHzMMIC Cascode TravellingWave Amplifier (TWA) on 100 nm AlGaAs/GaAs pHEMT process were done for application in next generation instrumentation and high data transfer rate (100 Gb/s) optical modulator systems. The foundry service and device models used for the design are of the WINPP10-10 process from WIN Semiconductor Corp., Taiwan, a commercial and highly stable process. The cut-off frequency ft and maximum frequency of oscillation fmax for this process are 135 GHz and 185 GHz respectively. Thus, the design was aimed at pushing the ultimate limits of operation for this process. The design specifications were targeted to have S21 = 9.0 to 10.0 ± 1.0 dB, S11 & S22 ≤ -10.0 dB and S12 ≤ -25.0 dB in the whole frequency range. In order to achieve the targeted RF performance, it is imperative to have accurate transistor models over the frequency range of operation, transistor configuration mode and operating bias points. Using smaller periphery transistors results in lower extrinsic & intrinsic input and output capacitances that lead to achieving very wide band performance. Thus, device sizes as small as 2x10 μm were used for the design. A cascode topology, which is a series connection of a common-source and common-gate field effect transistor (FET), was used to achieve large bandwidth of operation, high reverse isolation and high input and output impedance. Using very small periphery devices at cascode bias points posed limitation in the design in terms of accuracy of transistor models under these conditions, specifically at high frequencies i.e., above 50 GHz. One of the major systemrequirements for the application of MMIC ultra-broadband amplifiers in instrumentation is to achieve and maintain high reverse isolation (≤ -25.0 dB) over the whole frequency range of operation which cannot be achieved alone by the cascode topology and new design techniques have to be devised. These twomajor challenges, namely high frequency small periphery FET model modification & development and design technique to achieve high reverse isolation in ultra-broadband frequency range have been addressed in this research.
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Sajedin, M., Issa T. Elfergani, Jonathan Rodriguez, Raed A. Abd-Alhameed, M. Fernandez-Barciela, and M. Violas. "Ultra-Compact mm-Wave Monolithic IC Doherty Power Amplifier for Mobile Handsets." MDPI, 2021. http://hdl.handle.net/10454/18600.

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Yes<br>This work develops a novel dynamic load modulation Power Amplifier (PA) circuity that can provide an optimum compromise between linearity and efficiency while covering multiple cellular frequency bands. Exploiting monolithic microwave integrated circuits (MMIC) technology, a fully integrated 1W Doherty PA architecture is proposed based on 0.1 µm AlGaAs/InGaAs Depletion- Mode (D-Mode) technology provided by the WIN Semiconductors foundry. The proposed wideband DPA incorporates the harmonic tuning Class-J mode of operation, which aims to engineer the voltage waveform via second harmonic capacitive load termination. Moreover, the applied post-matching technique not only reduces the impedance transformation ratio of the conventional DPA, but also restores its proper load modulation. The simulation results indicate that the monolithic drive load modulation PA at 4 V operation voltage delivers 44% PAE at the maximum output power of 30 dBm at the 1 dB compression point, and 34% power-added efficiency (PAE) at 6 dB power back-off (PBO). A power gain flatness of around 14 ± 0.5 dB was achieved over the frequency band of 23 GHz to 27 GHz. The compact MMIC load modulation technique developed for the 5G mobile handset occupies the die area of 3.2.<br>This research was funded by the European Regional Development Fund (FEDER), through COMPETE 2020, POR ALGARVE 2020, Fundação para a Ciência e a Tecnologia (FCT) under i-Five Project (POCI-01-0145-FEDER-030500). This work is also part of the POSITION-II project funded by the ECSEL joint Undertaking under grant number Ecsel-345 7831132-Postitio-II-2017-IA. This work is supported by FCT/MCTES through national funds and when applicable co-funded EU funds under the project UIDB/50008/2020-UIDP/50008/2020. The authors would like to thank the WIN Semiconductors foundry for providing the MMIC GaAs pHEMT PDKs and technical support. This work is supported by the Project TEC2017-88242-C3-2-R- Spanish Ministerio de Ciencia, Innovación e Universidades and EU-FEDER funding.
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Cano, de Diego Juan Luis. "Cryogenic Technology in the Microwave Engineering: Application to MIC and MMIC Very Low Noise Amplifier Design." Doctoral thesis, Universidad de Cantabria, 2010. http://hdl.handle.net/10803/10674.

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Algunas aplicaciones tales como la radio astronomía y las comunicaciones con el espacio profundo requieren receptores muy sensibles. Esta tesis trata sobre la tecnología criogénica aplicada a la ingeniería de microondas y se centra en el diseño de amplificadores de muy bajo ruido tanto en tecnología híbrida (MIC) como monolítica (MMIC). El trabajo cubre un ancho campo de conocimiento desde la fabricación mecánica y la configuración de los sistemas hasta el diseño y medida de las aplicaciones finales. Comenzando con pautas y consejos para diseñar sistemas criogénicos (criostatos) este documento profundiza en la medida de parámetros-S y ruido. El diseño de circuitos criogénicos se inicia con el estudio de los efectos de las bajas temperaturas sobre los transistores y componentes de microondas centrándose en los dispositivos de fosfuro de indio (InP). El conocimiento adquirido en este estudio se aplica al diseño de amplificadores de muy bajo ruido en banda Ka.<br>Some applications such as radio astronomy and deep space communications require very sensitive receivers. This dissertation deals with the cryogenic technology applied to the microwave engineering and focuses on the design of very low noise amplifiers both in hybrid (MIC) and monolithic (MMIC) technologies. The work covers a wide field of knowledge from hardware manufacture and system set up to final applications design and measurement. Starting from guidelines and advices to design cryogenic systems (cryostats) this document goes into S-parameters and noise measurements in deep. The design of cryogenic circuits is initialized with the study of the effect of low temperatures on microwave transistors and components focusing in indium-phosphide (InP) devices. The knowledge gained with this study is applied to the design of very low noise amplifiers in Ka-band.
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Loescher, David. "Use of waveform engineering to stress test, characterise and design a highly efficient MMIC power amplifier." Thesis, Cardiff University, 2018. http://orca.cf.ac.uk/116177/.

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This thesis brings together different areas of waveform engineering in power amplifier research, from load pull and reliability testing through to measuring finished designs. It shows how using all this knowledge together can enable an engineer to start with just a transistor, and progress to a functional design much faster with the use of waveform engineering at every stage. Initially this project looked at expanding the conventional voltage standing wave ratio sweep to address more than the fundamental impedance with static harmonic impedances by including full harmonic impedance sweeps. This showed there were voltage peaking interactions that could potentially cause device failure, these were caused by interactions between the fundamental and harmonic impedances. The next step was to identify the cause of failures that had occurred during voltage standing wave ratio sweeps. This demonstrated the need for waveforms to identify failures caused by peak voltage and/or current. Waveform data can also be used to analyse and compare the different device technologies and analyse their performance, allowing deep insight into the `knee' region of the RF-IV plot, and how it affects performance of a technology using a novel data processing approach. The final use of waveforms in this thesis is at the design stage, where a Continuous Class B design was done on a quasi-MMIC. This design was then fabricated and tested, showing that Continuous Class B and other continuous modes can be used for quasi-MMIC designs at S-band as well as the previously used laminate designs. Another topology that was used in this thesis was Doherty, which has traditionally struggled with bandwidth, but using a novel 50 V GaN FET supplied by Qorvo allowed a more broadband Doherty design to be fabricated.
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Barros, Alexandre Della Santa. "Projeto de osciladores de microondas distribuídos com realimentação reversa." Universidade de São Paulo, 2005. http://www.teses.usp.br/teses/disponiveis/3/3140/tde-28102005-181034/.

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Esta dissertação propõe uma metodologia de projeto de osciladores distribuídos controlados por tensão - DVCO - com realimentação reversa em freqüência de microondas. Estes constituem uma nova classe de osciladores recentemente proposta, a qual é obtida através da realimentação reversa de amplificadores distribuídos e tem como principal vantagem a possibilidade de sintonia em faixa ultra-larga de freqüência. São apresentados os fundamentos teóricos de operação do circuito e é proposta uma extensão da análise linear apresentada na literatura, considerando linhas de transmissão artificiais m-derivadas, a qual permite prever as transcondutâncias mínimas necessárias dos transistores e a freqüência inicial de oscilação. O método de projeto proposto é direcionado a DVCOs com realimentação reversa empregando transistores de efeito de campo dos tipos MESFET (Metal Semiconductor Field Effect Transistor) e PHEMT (Pseudomorfic High Electron Mobility Transistor), bem como ao uso de tecnologia de circuitos híbridos de microondas - MICs, e circuitos integrados monolíticos de microondas - MMICs. A metodologia proposta definiu critérios para implementar a topologia deste circuito através de componentes reais, considerando-se os parasitas associados aos mesmos. Para validação do procedimento de projeto, concebeu-se e simulou-se através do programa ADS da Agilent um oscilador intitulado DVCO 3 GHz, cuja faixa de freqüência especificada estende-se de 1 a 3 GHz e a potência mínima de saída especificada é de 10 dBm. Um protótipo foi construído em circuito híbrido e seus resultados experimentais foram comparados aos simulados. A freqüência de oscilação medida foi de 1,04 GHz a 3,05 GHz e a potência obtida esteve entre 9,8 e 14,3 dBm, apresentando boa concordância com as simulações. O ruído de fase foi medido entre 100 kHz e 1 MHz de distância da portadora, observando-se uma inclinação proporcional a 1/f3. Verificou-se que a diminuição da corrente de polarização Ids dos transistores, através da redução de sua tensão de polarização de porta-fonte Vgs, melhorou o ruído de fase. Na condição de polarização de menor ruído de fase, observaram-se valores entre -84 e -93 dBc/Hz a 100 kHz da portadora.<br>In this dissertation, a design methodology applied to microwave reverse feedback distributed voltage controlled oscillators - DVCO - is proposed. This circuit constitutes a new class of oscillators, obtained from reverse feeding back of the distributed amplifier. The main advantage of this topology is its capacity to achieve ultra-wideband frequency tuning. Circuit theoretical background is presented and an extension of the linear analysis presented in the literature is proposed. It allows predicting transistor minimum transconductances and the oscillation initial frequency, considering m-derived artificial transmission lines. The proposed design method is applicable to reverse feedback DVCOs employing field effect transistors MESFET (Metal Semiconductor Field Effect Transistor) and PHEMT (Pseudomorfic High Electron Mobility Transistor), as well as using MIC (Microwave Integrated Circuits) and MMIC (Monolithic Microwave Integrated Circuits) technology. The proposed methodology defined criterion to employ real components, considering the component parasitics. In order to validate the design method, an oscillator named DVCO 3 GHz was designed and simulated through software Agilent ADS, with specified band from 1 up to 3 GHz and minimum output power of 10 dBm. A prototype was implemented in hybrid circuit technology and the measurements were compared to the simulation results. The measured oscillation frequency varied from 1,04 GHz up to 3,05 GHz and the output power was 9,8 to 14,3 dBm, presenting good agreement with simulations. Phase noise was measured in the range between 100 kHz and 1 MHz shift from carrier; in which it was observed a 1/f3 slope. It was verified that decreasing the transistor bias current Ids through decreasing its gate bias voltage Vgs reduced phase noise. In the biasing condition for lowest phase noise, values between -84 and -93 dBc/Hz at 100 kHz off-set from carrier were measured.
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Books on the topic "MMIC amplifier"

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MIC & MMIC amplifier and oscillator circuit design. Artech House, 1990.

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Simons, Rainee. A flexible CPW package for a 30 GHz MMIC amplifier. National Aeronautics and Space Administration, 1992.

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Hausman, Howard. Microwave Power Amplifier Design With Mmic Modules. Artech House, 2018.

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J, Achatz Robert, Luo Ye, and United States. National Telecommunications and Information Administration, eds. Nonlinear operation of a MMIC RF power amplifier and its effects on battery current, interference, and link margin. U.S. Dept. of Commerce, National Telecommunications and Information Administration, 2000.

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United States. National Aeronautics and Space Administration., ed. Ku-band high efficiency GaAs mmic power amplifiers. National Aeronautics and Space Administration, 1988.

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United States. National Aeronautics and Space Administration., ed. Ku-band high efficiency GaAs mmic power amplifiers. National Aeronautics and Space Administration, 1988.

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Ku-band high efficiency GaAs mmic power amplifiers. National Aeronautics and Space Administration, 1988.

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K-band power enbedded [sic] transmission line (ETL) MMIC amplifiers for satellite communication applications. National Aeronautics and Space Administration, Lewis Research Center, 1998.

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Quen, Tserng Hua, and Lewis Research Center, eds. K-band power enbedded [sic] transmission line (ETL) MMIC amplifiers for satellite communication applications. National Aeronautics and Space Administration, Lewis Research Center, 1998.

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Quen, Tserng Hua, Lewis Research Center, and United States. National Aeronautics and Space Administration., eds. K-band power enbedded [sic] transmission line (ETL) MMIC amplifiers for satellite communication applications. National Aeronautics and Space Administration, Lewis Research Center, 1998.

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Book chapters on the topic "MMIC amplifier"

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Xia, Jiang, Zhao Zhengping, Zhang Zhiguo, Luo Xinjiang, Yang Ruixia, and Feng Zhihong. "Broadband MMIC Power Amplifier for X Band Applications." In Lecture Notes in Electrical Engineering. Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-14350-2_32.

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Yun, Young, Jang-Hyeon Jeong, Young-Bae Park, Bo-Ra Jung, Jeong-Gab Ju, and Eui-Hoon Jang. "A Fully-Integrated Amplifier MMIC Employing a CAD-Oriented MIM Shunt Capacitor." In Electrical Engineering and Control. Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-21765-4_130.

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Kim, Song-Gang, Hwan-Seok Yang, and Seung-Jae Yoo. "An InGaP HBT MMIC High Efficient Dual Path Power Amplifier for CDMA Handset Application." In IT Convergence and Security 2012. Springer Netherlands, 2012. http://dx.doi.org/10.1007/978-94-007-5860-5_41.

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Zhu, Wentao, Debin Hou, Jixin Chen, and Wei Hong. "Design and Implementation of V-Band MMIC Low Noise Amplifier in GaAs mHEMTs Process." In Lecture Notes in Electrical Engineering. Springer Singapore, 2021. http://dx.doi.org/10.1007/978-981-16-5692-7_15.

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Sepehry-Fard, Fareed. "The Design and Fabrication of a Novel 1/2 WATT, η > 52% Solid Phase Epitaxy Processed MMIC Power Amplifier for Ka Band Wireless Applications." In Mobile and Personal Satellite Communications 3. Springer London, 1999. http://dx.doi.org/10.1007/978-1-4471-0809-2_23.

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Kerherve, E., P. Jarry, and C. Tronche. "A New Approach to the Design of Microwave Amplifiers." In Directions for the Next Generation of MMIC Devices and Systems. Springer US, 1997. http://dx.doi.org/10.1007/978-1-4899-1480-4_40.

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Jeong, Jang-Hyeon, Young-Bae Park, Bo-Ra Jung, Jeong-Gab Ju, Eui-Hoon Jang, and Young-Yun. "A Fully-Integrated High Stable Broadband Amplifier MMICs Employing Simple Pre-matching/Stabilizing Circuits." In Electrical Engineering and Control. Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-21765-4_109.

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Ang, Chin Guek. "The Design and Modeling of 2.4 and 3.5 GHz MMIC PA." In Advances in Monolithic Microwave Integrated Circuits for Wireless Systems. IGI Global, 2012. http://dx.doi.org/10.4018/978-1-60566-886-4.ch006.

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This chapter discusses the design of MMIC power amplifiers for wireless application by using 0.15 µm GaAs Power Pseudomorphic High Electron Mobility Transistor (PHEMT) technology with a gate width of 100 µm and 10 fingers at 2.4 GHz and 3.5 GHz. The design methodology for power amplifier design can be broken down into three main sections: architecture design, small-signal design, and large-signal optimization. For 2.4 GHz power amplifier, with 3.0 V drain voltage, the amplifier has achieved 17.265 dB small-signal gain, input and output return loss of 16.310 dB and 14.418 dB, 14.862 dBm 1-dB compression power with 12.318% power-added efficiency (PAE). For 3.5GHz power amplifier, the amplifier has achieved 14.434 dB small-signal gain, input and output return loss of 12.612 dB and 11.746 dB, 14.665 dBm 1-dB compression power with 11.796% power-added efficiency (PAE). The 2.4 GHz power amplifier can be applied for Wireless LAN applications such as WiFi and WPAN whereas 3.5 GHz power amplifier for WiMax base station.
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Marzuki, Arjuna. "Inventions of Monolithic Microwave Integrated Circuits." In Advances in Monolithic Microwave Integrated Circuits for Wireless Systems. IGI Global, 2012. http://dx.doi.org/10.4018/978-1-60566-886-4.ch010.

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This chapter deals with the concept of first time right IC. A development of subsystems for wireless application is used as test case. The subsystems are Low Noise Amplifier (LNA), Medium Power Amplifier (MPA) and Variable Signal Generator (VSG). Several issues such as suitable multiband design flow and high speed switch must be solved. A new design methodology of integrated circuits for multiband application is presented. The design methodology is modified from a typical Monolithic Microwave Integrated Circuit (MMIC) flow. Core based design, parasitic aware approach and power constrained optimization are introduced into the new design flow. The same core circuit topology is used as main block to design 2.4 GHz and 3.5 GHz LNA and MPA. A power constrained optimization is applied to a test case amplifier i.e. broadband amplifier to get the optimized RF performance. The optimization is simulation-based technique. A 0.15 µm 85 GHz PHEMT is used in designing the LNA, MPA and broadband amplifier. This chapter also introduces the inventions of Voltage Controlled Oscillator (VCO), Mixer, Low Noise Amplifiers (LNA), Power Amplifiers (PA) and Transmit-Receive Switch (T/R). These circuits are crucial components for RF and Microwave front-end integrated circuits. The elements of inventions of circuits are clearly explained. The inventions reflect the requirement or the need of solving current problem using available technology.
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Yip, Ching Wen. "The Design and Modeling of 2.4 GHz and 3.5 GHz MMIC LNA." In Advances in Monolithic Microwave Integrated Circuits for Wireless Systems. IGI Global, 2012. http://dx.doi.org/10.4018/978-1-60566-886-4.ch007.

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LNA is an electronic amplifier that is required in receiver systems to increase the amplitude of the very low level signals from the antenna without adding too much noise. Software Advance Design System (ADS) was used to simulate the circuit and design the layout. LNA was designed using cascode topology with feedback techniques which produces better matching and unconditionally stable over the entire desired frequencies. For the 2.4 GHz operation, the amplifier achieves gain of 14.949 dB, noise figure of 1.951 dB and input reflection coefficient of -10.419 dB. With operating voltage supply at 3V, the total current consumption is 13 mA. For 3.5GHz amplifier, gain is 22.985 dB, noise figure is 1.964dB, input reflection coefficient is -12.427 dB and current consumption is 18 mA.
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Conference papers on the topic "MMIC amplifier"

1

Bezus, S. V., S. I. Tolstolutskiy, A. I. Lee, A. V. Tolstolutskaja, V. V. Kazatchkov, and V. P. Komor. "L-BAND GaAs MMIC amplifier." In Telecommunication Technology" (CriMiCo 2008). IEEE, 2008. http://dx.doi.org/10.1109/crmico.2008.4676296.

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Darwish, Ali M., H. Alfred Hung, Edward Viveiros, and Ming-Yih Kao. "Multi-octave GaN MMIC amplifier." In 2010 IEEE/MTT-S International Microwave Symposium - MTT 2010. IEEE, 2010. http://dx.doi.org/10.1109/mwsym.2010.5515885.

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Darwish, A., A. Hung, E. Viveiros, and M. Kao. "Multi-octave GaN MMIC amplifier." In 2010 IEEE/MTT-S International Microwave Symposium - MTT 2010. IEEE, 2010. http://dx.doi.org/10.1109/mwsym.2010.5516671.

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Edgar, D. L., H. McLelland, S. Ferguson, et al. "150GHz Coplanar Waveguide MMIC Amplifier." In 1999 29th European Microwave Conference. IEEE, 1999. http://dx.doi.org/10.1109/euma.1999.338318.

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Fouquet, F., J. L. Gautier, D. Pasquet, and C. Josse. "Broadband MMIC amplifier with active matching." In 23rd European Microwave Conference, 1993. IEEE, 1993. http://dx.doi.org/10.1109/euma.1993.336719.

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Li, Oupeng, Yuehang Xu, Yunchuan Guo, Lei Wang, Ruimin Xu, and Bo Yan. "60GHz GaAs MMIC low noise amplifier." In 2012 International Conference on Microwave and Millimeter Wave Technology (ICMMT). IEEE, 2012. http://dx.doi.org/10.1109/icmmt.2012.6229981.

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Jee, Seunghoon, Juyeon Lee, Bonghyuk Park, Cheol Ho Kim, and Bumman Kim. "GaN MMIC broadband Doherty power amplifier." In 2013 Asia Pacific Microwave Conference - (APMC 2013). IEEE, 2013. http://dx.doi.org/10.1109/apmc.2013.6694878.

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Lee, Juyeon, Seunghoon Jee, Bonghyuk Park, Cheol Ho Kim, and Bumman Kim. "GaN MMIC broadband saturated power amplifier." In 2013 Asia Pacific Microwave Conference - (APMC 2013). IEEE, 2013. http://dx.doi.org/10.1109/apmc.2013.6694879.

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Radisic, Vesna, Sander Weinreb, Miro Micovic, et al. "Ultra Broadband Low Power MMIC Amplifier." In 2000 30th European Microwave Conference. IEEE, 2000. http://dx.doi.org/10.1109/euma.2000.338730.

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Schoch, Benjamin, Axel Tessmann, Arnulf Leuther, Sandrine Wagner, and Ingmar Kallfass. "260 GHz Broadband Power Amplifier MMIC." In 2019 12th German Microwave Conference (GeMiC). IEEE, 2019. http://dx.doi.org/10.23919/gemic.2019.8698140.

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Reports on the topic "MMIC amplifier"

1

Penn, John E. Distributed Amplifier Monolithic Microwave Integrated Circuit (MMIC) Design. Defense Technical Information Center, 2012. http://dx.doi.org/10.21236/ada570161.

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Neves, Hercules P., and Warren Wright. Millimeter-Wave Quasi-Optical MEMS Steered MMIC Amplifier Array. Defense Technical Information Center, 2000. http://dx.doi.org/10.21236/ada391330.

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Penn, John E. Monolithic Microwave Integrated Circuits (MMIC) Broadband Power Amplifiers. Defense Technical Information Center, 2012. http://dx.doi.org/10.21236/ada571906.

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Ozalas, Matthew T. High Efficiency Class-F MMIC Power Amplifiers at Ku-Band. Defense Technical Information Center, 2005. http://dx.doi.org/10.21236/ada456277.

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Penn, John E. Monolithic Microwave Integrated Circuits (MMIC) Broadband Power Amplifiers (Part 2). Defense Technical Information Center, 2013. http://dx.doi.org/10.21236/ada585852.

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