Relevant bibliographies by topics / MMIC (Monolithic Microwave Integrated Circuit)

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'MMIC (Monolithic Microwave Integrated Circuit)'

Author: Grafiati
Published: 4 June 2021
Last updated: 3 February 2022

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Journal articles on the topic "MMIC (Monolithic Microwave Integrated Circuit)"

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BAHL, INDER J. "MONOLITHIC MICROWAVE INTEGRATED CIRCUITS BASED ON GaAs MESFET TECHNOLOGY." International Journal of High Speed Electronics and Systems 06, no. 01 (1995): 91–124. http://dx.doi.org/10.1142/s0129156495000031.

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Advanced military microwave systems are demanding increased integration, reliability, radiation hardness, compact size and lower cost when produced in large volume, whereas the microwave commercial market, including wireless communications, mandates low cost circuits. Monolithic Microwave Integrated Circuit (MMIC) technology provides an economically viable approach to meeting these needs. In this paper the design considerations for several types of MMICs and their performance status are presented. Multi-function integrated circuits that advance the MMIC technology are described, including integrated microwave/digital functions and a highly integrated transceiver at C-band.
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Shin, Low Wen, and Arjuna Marzuki . "5GHz MMIC LNA Design Using Particle Swarm Optimization." Information Management and Business Review 5, no. 6 (2013): 257–62. http://dx.doi.org/10.22610/imbr.v5i6.1050.

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This research presents an optimization study of a 5 GHz Monolithic Microwave Integrated Circuit (MMIC) design using Particle Swarm Optimization (PSO). MMIC Low Noise Amplifier (LNA) is a type of integrated circuit device used to capture signal operating in the microwave frequency. This project consists of two stages: implementation of PSO using MATLAB and simulation of MMIC design using Advanced Design System (ADS). PSO model that mimics the biological swarm behavior is developed to optimize the MMIC design variables in order to achieve the required circuit performance and specifications such as power gain, noise figure, drain current and circuit stability factor. Simulation results show that the proposed MMIC design fulfills the circuit stability factor and achieves a power gain of 19.73dB, a noise figure of 1.15 dB and a current of 0.0467A.
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Makri, R., M. Gargalakos, and N. K. Uzunoglu. "Design and Development of Monolithic Microwave Integrated Amplifiers and Coupling Circuits for Telecommunication Systems Applications." Active and Passive Electronic Components 25, no. 1 (2002): 1–22. http://dx.doi.org/10.1080/08827510211275.

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Recent advances in printed circuit and packaging technology of microwave and millimeter wave circuits result to the increasing use of MMICs in telecommunication systems. At Microwave and Fiber Optics Lab of NTUA several designs of various MMICs were conducted using the HP Eesof CAD Tool and FET and HEMT models of F20 and H40 GaAs foundry process of GEC Marconi. The designed MMICs are constructed in Europractice Organization while on-wafer probe measurements are performed in the Lab. In that framework, MMIC technologies are employed in the design of power and low noise amplifiers and couplers to be used for mobile and wireless communications as well as remote sensing and radar applications. A medium power linear FET amplifier has been designed with combining techniques on a single chip. The circuit operates at 14.4–15.2 GHz with an input power of−15dB m, a 36 dB total gain, while the input and output VSWR is less than 1.6. Due to high cost of MMIC fabrication only the first subunit was manufactured and tests verified the simulation results. Additionally, novel techniques have been used for the design of two coupling networks at 10 GHz in order to minimize the area occupied. A meander-kind design as well as shunt capacitors were implemented for a90°quadrature coupler and a Wilkinson one in order to reduce size. Finally, a two stages low noise amplifier was designed with the use of H40 GaAs process in order the differences between the relevant designs to be explored. The key specifications for this MMIC LNA include operation at 10 GHz with a total gain of 17 dB while the noise figure is less than 1.5 dB.
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Filippov, Ivan, Nikolay Duchenko, and Yuri Gimpilevich. "Particularities of complex-functional monolithic integrated circuits post-layout simulation." ITM Web of Conferences 30 (2019): 01003. http://dx.doi.org/10.1051/itmconf/20193001003.

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This paper presents a silicon-based complex-functional monolithic microwave integrated circuits (MMICs) design methodology. Post-layout simulation stage particularities are discussed. Pre-tapeout functionality verification results of the C-band phase and amplitude control MMIC based on 0.18 μm SiGe BiCMOS technology are also presented.
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Gaudreault, M., and M. G. Stubbs. "Lumped-element components for GaAs monolithic microwave integrated circuits." Canadian Journal of Physics 63, no. 6 (1985): 736–39. http://dx.doi.org/10.1139/p85-117.

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Gallium-arsenide monolithic microwave integrated circuits (GaAs MMIC's) promise the microwave circuit designer significant size, weight, and reliability advantages. Distributed and lumped matching techniques have been utilized previously in MMIC design with the latter offering greater bandwidth and smaller size. In this paper, experimental results for lumped interdigitated capacitors on a gallium-arsenide substrate are presented. Computer modelling in the frequency range 2–18 GHz was used to derive a set of design curves for these capacitors. These curves cover aspect ratios of w/s = 1 and w/s = 2.5. Experimental results obtained by using these curves to design lumped-element monolithic filters show excellent agreement with theory.
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Powell, J. R., Colin Viegas, Hoshiar Singh Sanghera, P. G. Huggard, and Byron Alderman. "Comparing Novel MMIC and Hybrid Circuit High Efficiency GaAs Schottky Diode mm-Wave Frequency Doublers." Electronics 9, no. 10 (2020): 1718. http://dx.doi.org/10.3390/electronics9101718.

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A novel Schottky diode frequency doubler in E-band, using biased series-connected diodes in the output waveguide, is reported. The doubler was implemented using a GaAs Schottky Monolithic Microwave Integrated Circuit (MMIC) process with integrated capacitors and beam leads. A comparison is made with a hybrid doubler using a more conventional single-ended configuration with two discrete diodes in a planar transmission line circuit. Both devices exhibit excellent performance over the 67–78 GHz design bandwidth, with the novel MMIC design producing 25 to 55 mW at 12 to 22% power conversion efficiency. Good agreement of measurements with simulations was also found.
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MARTINEZ, EDGAR J. "THE TRANSFORMING MMIC." International Journal of High Speed Electronics and Systems 13, no. 01 (2003): 59–64. http://dx.doi.org/10.1142/s0129156403001521.

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In this paper, we describe two new DARPA initiatives addressing new concepts in compound semiconductor materials and architectures that will radically transform monolithic microwave integrated circuits (MMICs) technology to address future requirements for military and commercial sensors and mobile communication networks.
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Darwish, Ali M., H. Alfred Hung, Edward Viveiros, and Amr A. Ibrahim. "Broadband AlGaN/GaN MMIC amplifier." International Journal of Microwave and Wireless Technologies 3, no. 4 (2011): 399–404. http://dx.doi.org/10.1017/s1759078711000195.

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A broadband Monolithic Microwave Integrated Circuit (MMIC) amplifier, with 12 ± 2 dB gain across the 0.1–27 GHz band has been demonstrated using the AlGaN/GaN on SiC technology. The amplifier design employs a non-conventional, series-DC/RF-High Electron Mobility Transistor (HEMT) configuration. This configuration provides an alternative design to the conventional traveling-wave amplifier (TWA). It results in a smaller MMIC chip size, and extends amplifier gain to the low-frequency region. The amplifier MMIC utilizes four HEMT devices in series and could be biased at voltages up to 120 V.
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Metel, A. A., T. N. Fail, Y. A. Novichkova, I. M. Dobush, A. Е. Goryainov, and A. A. Kalentyev. "Automated design of a linear microwave monolithic distributed amplifier." Issues of radio electronics, no. 3 (June 25, 2021): 40–48. http://dx.doi.org/10.21778/2218-5453-2021-3-40-48.

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Microwave integrated circuit (IC) design tends to become more efficient and less expensive which leads to emerging the circuit topology and layout synthesis software. In the paper we present a technique and an algorithm for microwave distributed amplifier (DA) automated synthesis based on requirements to linear characteristics. The technique feature is the using of active and passive element’s models for a chosen IC process. This allow the technique to generate circuit topology which can be manufactured using a given IC process. The proposed DA automated design technique work was demonstrated with preamplifier stage design for 20–30 GHz buffer amplifier MMIC based on the 0.25um GaAs pHEMT process of Svetlana-Rost foundry in Saint-Petersburg.
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Platt, Duncan, Lars Pettersson, Darius Jakonis, Michael Salter, and Joacim Haglund. "Integrated 79 GHz UWB automotive radar front-end based on Hi-Mission MCM-D silicon platform." International Journal of Microwave and Wireless Technologies 2, no. 3-4 (2010): 325–32. http://dx.doi.org/10.1017/s1759078710000462.

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A highly integrated silicon platform (Hi-Mission) for high frequency applications is introduced. This platform utilizes heterogeneous Multi-Chip Module-Deposited (MCM-D) technology with integrated passive devices together with silicon and GaAs Monolithic Microwave Integrated Circuit (MMIC) technology developed for the automotive Ultra Wide Band (UWB) radar (short-range radar) frequency band from 77 to 81 GHz. Developments are described in the area of MCM-D process development, MMIC, integrated phased array antenna, module design, and assembly process development. The demonstrator is composed of two test vehicles designed for conducted and radiated measurements, respectively. Test results are presented at the component and module level.
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Dissertations / Theses on the topic "MMIC (Monolithic Microwave Integrated Circuit)"

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Robinson, Jayne Helen. "Artifical intelligence applied to MMIC layout." Thesis, Queen's University Belfast, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.295424.

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Kang, Qinghua (George). "Characterization of Vertical Interconnects in 3-D Monolithic Microwave Integrated Circuits (3-D MMIC)." University of Cincinnati / OhioLINK, 2003. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1053630359.

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Ahmad, Norhawati Binti. "Modelling and design of Low Noise Amplifiers using strained InGaAs/InAlAs/InP pHEMT for the Square Kilometre Array (SKA) application." Thesis, University of Manchester, 2012. https://www.research.manchester.ac.uk/portal/en/theses/modelling-and-design-of-low-noise-amplifiers-using-strained-ingaasinalasinp-phemt-for-the-square-kilometre-array-ska-application(b2b50fd8-0a13-4f71-b3f0-616ee4b2a82b).html.

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The largest 21st century radio telescope, the Square Kilometre Array (SKA) is now being planned, and the first phase of construction is estimated to commence in the year 2016. Phased array technology, the key feature of the SKA, requires the use of a tremendous number of receivers, estimated at approximately 37 million. Therefore, in the context of this project, the Low Noise Amplifier (LNA) located at the front end of the receiver chain remains the critical block. The demanding specifications in terms of bandwidth, low power consumption, low cost and low noise characteristics make the LNA topologies and their design methodologies one of the most challenging tasks for the realisation of the SKA. The LNA design is a compromise between the topology selection, wideband matching for a low noise figure, low power consumption and linearity. Considering these critical issues, this thesis describes the procedure for designing a monolithic microwave integrated circuit (MMIC) LNA for operation in the mid frequency band (400 MHz to 1.4 GHz) of the SKA. The main focus of this work is to investigate the potential of MMIC LNA designs based on a novel InGaAs/InAlAs/InP pHEMT developed for 1 µm gate length transistors, fabricated at The University of Manchester. An accurate technique for the extraction of empirical linear and nonlinear models for the fabricated active devices has been developed. In addition to the linear and nonlinear model of the transistors, precise models for passive devices have also been obtained and incorporated in the design of the amplifiers. The models show excellent agreement between measured and modelled DC and RF data. These models have been used in designing single, double and differential stage MMIC LNAs. The LNAs were designed for a 50 Ω input and output impedance. The excellent fits between the measured and modelled S-parameters for single and double stage single-ended LNAs reflects the accurate models that have been developed. The single stage LNA achieved a gain ranging from 9 to 13 dB over the band of operation. The gain was increased between 27 dB and 36 dB for the double stage and differential LNA designs. The measured noise figures obtained were higher by ~0.3 to ~0.8 dB when compared to the simulated figures. This is due to several factors which are discussed in this thesis. The single stage design consumes only a third of the power (47 mW) of that required for the double stage design, when driven from a 3 V supply. All designs were unconditionally stable. The chip sizes of the fabricated MMIC LNAs were 1.5 x 1.5 mm2 and 1.6 x 2.5 mm2 for the single and double stage designs respectively. Significantly, a series of differential input to single-ended output LNAs became of interest for use in the Square Kilometre Array (SKA), as it utilises differential output antennas in some of its configurations. The single-ended output is preferable for interfacing to the subsequent stages in the analogue chain. A noise figure of less than 0.9 dB with a power consumption of 180 mW is expected for these designs.
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Lauterbach, Adam Peter. "Low-cost SiGe circuits for frequency synthesis in millimeter-wave devices." Australia : Macquarie University, 2010. http://hdl.handle.net/1959.14/76626.

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"2009"<br>Thesis (MSc (Hons))--Macquarie University, Faculty of Science, Dept. of Physics and Engineering, 2010.<br>Bibliography: p. 163-166.<br>Introduction -- Design theory and process technology -- 15GHz oscillator implementations -- 24GHz oscillator implementation -- Frequency prescaler implementation -- MMIC fabrication and measurement -- Conclusion.<br>Advances in Silicon Germanium (SiGe) Bipolar Complementary Metal Oxide Semiconductor (BiCMOS) technology has caused a recent revolution in low-cost Monolithic Microwave Integrated Circuit (MMIC) design. -- This thesis presents the design, fabrication and measurement of four MMICs for frequency synthesis, manufactured in a commercially available IBM 0.18μm SiGe BiCMOS technology with ft = 60GHz. The high speed and low-cost features of SiGe Heterojunction Bipolar Transistors (HBTs) were exploited to successfully develop two single-ended injection-lockable 15GHz Voltage Controlled Oscillators (VCOs) for application in an active Ka-Band antenna beam-forming network, and a 24GHz differential cross-coupled VCO and 1/6 synchronous static frequency prescaler for emerging Ultra Wideband (UWB) automotive Short Range Radar (SRR) applications. -- On-wafer measurement techniques were used to precisely characterise the performance of each circuit and compare against expected simulation results and state-of-the-art performance reported in the literature. -- The original contributions of this thesis include the application of negative resistance theory to single-ended and differential SiGe VCO design at 15-24GHz, consideration of manufacturing process variation on 24GHz VCO and prescaler performance, implementation of a fully static multi-stage synchronous divider topology at 24GHz and the use of differential on-wafer measurement techniques. -- Finally, this thesis has llustrated the excellent practicability of SiGe BiCMOS technology in the engineering of high performance, low-cost MMICs for frequency synthesis in millimeterwave (mm-wave) devices.<br>Mode of access: World Wide Web.<br>xxii, 166 p. : ill (some col.)
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Philippon-Martin, Audrey. "Étude d’une nouvelle filière de composants sur technologie nitrure de gallium : conception et réalisation d’amplificateurs distribués de puissance large bande à cellules cascodes en montage flip-chip et technologie MMIC." Limoges, 2007. https://aurore.unilim.fr/theses/nxfile/default/862a35bd-117b-4bc6-b2a0-044747ee2ff7/blobholder:0/2007LIMO4025.pdf.

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Ces travaux de recherche se rapportent à l’étude de transistors HEMTs en Nitrure de Gallium pour l’amplification de puissance micro-onde. Une étude des caractéristiques des matériaux grand gap et plus particulièrement du GaN est réalisée afin de mettre en exergue l’adéquation de leurs propriétés pour des applications de puissance hyperfréquence telle que l’amplification large bande. Dans ce contexte, des résultats de caractérisations et modélisations électriques de composants passifs et actifs sont présentés. Les composants passifs dédiés aux conceptions de circuits MMIC sont décrits et différentes méthodes d’optimisation que ce soit au niveau électrique ou électromagnétique sont explicitées. Les modèles non linéaires de transistors impliqués dans nos conceptions sont de même détaillés. Le fruit de ces travaux concerne la conception d’amplificateurs distribués de puissance large bande à base de cellules cascode de HEMTs GaN, l’un étant reportés en flip-chip sur un substrat d’AlN, le second en technologie MMIC. La version MMIC permet d’atteindre 6. 3W sur la bande 4-18GHz à 2dB de compression. Ces résultats révèlent les fortes potentialités attendues des composants HEMTs GaN<br>The aim of this study is to assess the potentialities of HEMTs AlGaN/GaN transistors for RF power applications. The properties of wide band-gap materials and especially the GaN material are analysed in order to highlight their capabilities for applications to wideband power amplifiers. Modeling of passive components is explained and the design guide library on SiC substrate is implemented. Characterization results as well as linear and nonlinear simulations are presented on devices and circuits. The results of this work give concrete expression to the design of wideband power amplifiers showing a distributed architecture of cascode cells using GaN HEMTs, the first one flip-chip mounted onto an AlN substrate and the second one in MMIC technology. One MMIC version allows to obtain 6. 3W over a 4 to 18GHz bandwidth at 2dB compression input power. These results bring to light famous potentialities assigned to HEMTs GaN components
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Sánchez-Hernández, David A. "Active microstrip patch antennas for monolithic microwave integrated circuits (MMICs)." Thesis, King's College London (University of London), 1996. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.362513.

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Manfrin, Stilante Koch. "Proposta e implementação de um receptor optoeletrônico integrado para redes ópticas passivas (PONs) empregando multiplexação por divisão de comprimento de onda (WDM)." Universidade de São Paulo, 2003. http://www.teses.usp.br/teses/disponiveis/18/18133/tde-01122015-101424/.

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O presente trabalho descreve o desenvolvimento e implementação de duas configurações distintas de um receptor optoeletrônico integrado. A primeira configuração é similar a um projeto encontrado na literatura mas apresenta diversas modificações que lhe conferiram melhor desempenho em comparação ao projeto original. A segunda configuração é uma nova proposta deste trabalho. O receptor foi desenvolvido e implementado visando sua aplicação em redes de comunicações ópticas passivas (PONs) de alta velocidade comutadas a pacote, para possibilitar a utilização da técnica de multiplexação em comprimento de onda (WDM), aumentando assim a capacidade de transmissão da rede, em particular no ramo de ligação da rede de serviços com o usuário final, denominado rede de acesso. O principal objetivo do receptor aqui desenvolvido foi proporcionar uma sintonia rápida entre os canais disponíveis na rede, possibilitando sua seleção num tempo inferior àquele necessário para a transmissão de um único pacote de informação, diminuindo assim o atraso de sintonia e, por conseguinte, a perda de informação. Para tanto, os circuitos integrados implementados e caracterizados referem-se aos circuitos de chaveamento eletrônico e do amplificador de transimpedância das duas configurações investigadas. Os dados experimentais obtidos para as duas configurações confirmaram a previsão de chaveamento dos canais de entrada num intervalo de tempo da ordem de alguns nanosegundos, o que é totalmente compatível com a velocidade de transmissão das aplicações a que se destina este receptor (aproximadamente 5 Gbits/s). Adicionalmente, são apresentados os dados experimentais relativos à freqüência de corte, ganho direto, isolação, relação on/off e características de ruído dos circuitos implementados.<br>The present work describes the design and implementation of two configurations of an integrated optoelectronic receiver. The first one is similar to a previously reported design but with some modifications to improve its performance. The second one is a new proposal of this work. The goal of the receiver design and implementation was its application in high bit rate packet-switched passive optical networks (PONs) employing the wavelength division multiplexing (WDM) technique to increase the network capacity, in particular on the connection branch of the network core with the final user, the access network. The main goal of the receiver design was to achieve a fast channel tuning, allowing a tuning time smaller than the required for the transmission of a single information packet, decreasing the tuning latency and, therefore, the rate of information packet loss. In order to accomplish this goal, the implemented and tested integrated circuits include the electronic switching circuit and the transimpedance amplifier for both configurations investigated. The measured data for both configurations confirm the expected input channel switching time results, of about a few nanoseconds, which is certainly useful for the expected bit rate of operation (approximate 5 Gbps). Additionally, experimental results concerning cutoff frequency and bandwidth, direct gain, isolation, on/off ratio, and noise characteristics of both implemented circuits are presented.
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Malmqvist, Robert. "Tuneable recursive active monolithic microwave integrated circuit filters /." Linköping : Univ, 2001. http://www.bibl.liu.se/liupubl/disp/disp2001/tek698s.pdf.

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Shorthouse, David Brian. "The CAD and analysis of passive monolithic microwave integrated circuits by the finite difference time domain technique." Thesis, University of Bristol, 1992. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.362984.

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Brennan, Michael. "Automating the MMIC design process using expert systems." Thesis, Queen's University Belfast, 1993. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.333787.

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Books on the topic "MMIC (Monolithic Microwave Integrated Circuit)"

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Mitsui, Yasuo. MMIC--monolithic microwave integrated circuits. Gordon and Breach Science Publishers, 1989.

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MIC & MMIC amplifier and oscillator circuit design. Artech House, 1990.

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Ponchak, George E. Monolithic microwave integrated circuit technology for advanced space communication. National Aeronautics and Space Administration, 1988.

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Schuster, C. E. Test structure implementation document: DC parametric test structures and test methods for monolithic microwave integrated circuits (MMICs). U.S. Dept. of Commerce, Technology Administration, National Institute of Standards and Technology, 1995.

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Schuster, C. E. Test structure implementation document: DC parametric test structures and test methods for monolithic microwave integrated circuits (MMICs). U.S. Dept. of Commerce, Technology Administration, National Institute of Standards and Technology, 1995.

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Schuster, C. E. Test structure implementation document: DC parametric test structures and test methods for monolithic microwave integrated circuits (MMICs). U.S. Dept. of Commerce, Technology Administration, National Institute of Standards and Technology, 1995.

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Monolithic optical integrated control circuitry for GaAs MMIC-based phased arrays. National Aeronautics and Space Administration, Lewis Research Center, 1985.

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United States. Defense Advanced Research Projects Agency, Wright Laboratory (Wright-Patterson Air Force Base, Ohio), and National Institute of Standards and Technology (U.S.), eds. Test structure implementation document: DC parametric test structures and test methods for monolithic microwave integrated circuits (MMICs). U.S. Dept. of Commerce, Technology Administration, National Institute of Standards and Technology, 1995.

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The MMIC program: A technology impact report on the microwave, millimeter-wave integrated circuit (MIMIC) program and its impact on the market for gallium arsenide ICs and high performa[n]ce integrated circuits. Electronic Trend Publications, 1988.

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Book chapters on the topic "MMIC (Monolithic Microwave Integrated Circuit)"

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Wen, C. P., Michael Cole, C. K. Pao, and R. F. Wang. "CAD Needs for Flip Chip Coplanar Waveguide Monolithic Microwave Integrated Circuit Technology." In Directions for the Next Generation of MMIC Devices and Systems. Springer US, 1997. http://dx.doi.org/10.1007/978-1-4899-1480-4_44.

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Chang, David C., Doris I. Wu, and Jian X. Zheng. "Numerical Modeling of Passive Networks and Components in Monolithic Microwave Integrated Circuits (MMICS)." In Directions in Electromagnetic Wave Modeling. Springer US, 1991. http://dx.doi.org/10.1007/978-1-4899-3677-6_24.

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Marzuki, Arjuna. "Inventions of Monolithic Microwave Integrated Circuits." In Advances in Monolithic Microwave Integrated Circuits for Wireless Systems. IGI Global, 2012. http://dx.doi.org/10.4018/978-1-60566-886-4.ch010.

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This chapter deals with the concept of first time right IC. A development of subsystems for wireless application is used as test case. The subsystems are Low Noise Amplifier (LNA), Medium Power Amplifier (MPA) and Variable Signal Generator (VSG). Several issues such as suitable multiband design flow and high speed switch must be solved. A new design methodology of integrated circuits for multiband application is presented. The design methodology is modified from a typical Monolithic Microwave Integrated Circuit (MMIC) flow. Core based design, parasitic aware approach and power constrained optimization are introduced into the new design flow. The same core circuit topology is used as main block to design 2.4 GHz and 3.5 GHz LNA and MPA. A power constrained optimization is applied to a test case amplifier i.e. broadband amplifier to get the optimized RF performance. The optimization is simulation-based technique. A 0.15 µm 85 GHz PHEMT is used in designing the LNA, MPA and broadband amplifier. This chapter also introduces the inventions of Voltage Controlled Oscillator (VCO), Mixer, Low Noise Amplifiers (LNA), Power Amplifiers (PA) and Transmit-Receive Switch (T/R). These circuits are crucial components for RF and Microwave front-end integrated circuits. The elements of inventions of circuits are clearly explained. The inventions reflect the requirement or the need of solving current problem using available technology.
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Yip, Ching Wen. "The Design and Modeling of 2.4 GHz and 3.5 GHz MMIC LNA." In Advances in Monolithic Microwave Integrated Circuits for Wireless Systems. IGI Global, 2012. http://dx.doi.org/10.4018/978-1-60566-886-4.ch007.

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LNA is an electronic amplifier that is required in receiver systems to increase the amplitude of the very low level signals from the antenna without adding too much noise. Software Advance Design System (ADS) was used to simulate the circuit and design the layout. LNA was designed using cascode topology with feedback techniques which produces better matching and unconditionally stable over the entire desired frequencies. For the 2.4 GHz operation, the amplifier achieves gain of 14.949 dB, noise figure of 1.951 dB and input reflection coefficient of -10.419 dB. With operating voltage supply at 3V, the total current consumption is 13 mA. For 3.5GHz amplifier, gain is 22.985 dB, noise figure is 1.964dB, input reflection coefficient is -12.427 dB and current consumption is 18 mA.
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Ang, Chin Guek. "The Design and Modeling of 2.4 and 3.5 GHz MMIC PA." In Advances in Monolithic Microwave Integrated Circuits for Wireless Systems. IGI Global, 2012. http://dx.doi.org/10.4018/978-1-60566-886-4.ch006.

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This chapter discusses the design of MMIC power amplifiers for wireless application by using 0.15 µm GaAs Power Pseudomorphic High Electron Mobility Transistor (PHEMT) technology with a gate width of 100 µm and 10 fingers at 2.4 GHz and 3.5 GHz. The design methodology for power amplifier design can be broken down into three main sections: architecture design, small-signal design, and large-signal optimization. For 2.4 GHz power amplifier, with 3.0 V drain voltage, the amplifier has achieved 17.265 dB small-signal gain, input and output return loss of 16.310 dB and 14.418 dB, 14.862 dBm 1-dB compression power with 12.318% power-added efficiency (PAE). For 3.5GHz power amplifier, the amplifier has achieved 14.434 dB small-signal gain, input and output return loss of 12.612 dB and 11.746 dB, 14.665 dBm 1-dB compression power with 11.796% power-added efficiency (PAE). The 2.4 GHz power amplifier can be applied for Wireless LAN applications such as WiFi and WPAN whereas 3.5 GHz power amplifier for WiMax base station.
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Ng, Wan Yeen, and Xhiang Rhung Ng. "The Design and Modeling of 30 GHz Microwave Front-End." In Advances in Monolithic Microwave Integrated Circuits for Wireless Systems. IGI Global, 2012. http://dx.doi.org/10.4018/978-1-60566-886-4.ch009.

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This chapter aims to discuss a millimeter wave integrated circuit (MMWIC) in frequency of 30 GHz especially switch (SPDT), medium power amplifier (MPA) and low noise amplifier (LNA). The switch is developed using a commercial 0.15 µm GaAs pHEMT technology. It achieves low loss and high isolation for millimeter wave applications. The circuit and layout drawing of SPDT switch are done by using Advanced Design System (ADS) software. The layout is verified by running the Design Rules Check (DRC) to check and clear all the errors. At the operating frequency of 30 GHz, the reported SPDT switch has 1.470 dB insertion loss and 37.455 dB of isolation. It also demonstrates 26.00 dBm of input P1dB gain compression point (P1dB) and 22.975 dBm of output P1dB. At a supply voltage of 3.0 V and 30 GHz operating frequency, this two-stage LNA achieves an associated gain of 21.628 dB, noise figure (NF) of 2.509 dB and output referred 1-dB compression point (P1dB) of -11.0 dBm, the total power consumptions for the LNA is 174 mW. At a supply voltage of 6.0 V and 30 GHz operating frequency, a 2-stage MPA achieves a linear gain (S21) of 13.236 dB, P1dB of 22.5 dBm, power gain of 11.055 dB and the PAE of 14.606%. The total power consumption for the MPA is 1.122 W. The 30 GHz LNA and PA can be applied in direct broadcast satellite (DBS), automotive radar transmitter and receiver.
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Herrera, Amparo. "Simulation Techniques for Improving Fabrication Yield of RF-CMOS ICs." In Advances in Wireless Technologies and Telecommunication. IGI Global, 2012. http://dx.doi.org/10.4018/978-1-4666-0083-6.ch004.

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One of the industry sectors with the largest revenue in the telecommunication field is the wireless communications field. Wireless operators compete for being the first to place their products in the market to obtain the highest revenues. Moreover, they try to offer products that fulfill the user demands in terms of price, battery life, and product quality. All these requirements must be also fulfilled by the designer of the MMIC (Microwave Monolithic Integrated Circuits) circuits that will be used in those wireless terminals, achieving a reliable design, with high performance, low cost, and if possible, in one or two foundry iterations so as to bring the product out to the market as soon as possible. Silicon based technologies are the lowest cost. The demand to use them is simply based on that fact, but their usage in these applications is limited by the ease of use for the designer, in particular, by the lack of adequate simulation models. These technologies don’t include some essential components for the design of RF circuits, which leads to measurement results quite different from those simulated. On the other hand, GaAs based technologies, more mature in the RF and microwave field, provide very accurate models, as well as additional tools to verify the design reliability (yield and sensitivity analysis), allowing good results often with only one foundry iteration. The deep study of the problems presented when designing Si-based RF circuits will convince the reader of the need to use special tools as electromagnetic simulation or coo simulation to prevent it. The chapter provides different simulation techniques that help the designer to obtain better designs with a lower cost, as foundry iterations are reduced.
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Bahl, Inder J. "Monolithic Microwave Integrated Circuits (MMICs)." In Encyclopedia of RF and Microwave Engineering. John Wiley & Sons, Inc., 2005. http://dx.doi.org/10.1002/0471654507.eme271.

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Mabrouk, Mohamed. "RF and Microwave Test of MMICs from Qualification to Mass Production." In Advances in Monolithic Microwave Integrated Circuits for Wireless Systems. IGI Global, 2012. http://dx.doi.org/10.4018/978-1-60566-886-4.ch011.

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This chapter describes some basic characteristic responses that must be known for each Monolithic Microwave Integrated Circuits. The main parameters such Return Loss, Insertion Losses or Gain, Power at 1dB compression, InterModulation Products or Noise Figure are very important and have to be measured before using the device in final applications. Basic rules of Test and Measurement in RF and Microwaves, as well for characterization on benches as for high volume production using Automatic Test Equipments installed in test platforms, are summarized for helping today’s test engineers to develop their own test solutions. The device, that was characterized on bench and tested in production environment, is a monolithic, integrated low noise amplifier (LNA) and mixer usable in RF receiver Front-End applications for Personal Communications functioning on frequency wideband between 0.1 and 2.0 GHz.
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Carr, Joesph J. "Hybrid and Monolithic Microwave Integrated Circuit Amplifiers." In Microwave & Wireless Communications Technology. Elsevier, 1996. http://dx.doi.org/10.1016/b978-075069707-1/50058-4.

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Conference papers on the topic "MMIC (Monolithic Microwave Integrated Circuit)"

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Dearn, A. W. "MMIC oscillator design." In IEE Colloquium on MMICs (Monolithic Microwave Integrated Circuits). IEE, 1995. http://dx.doi.org/10.1049/ic:19951416.

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Buck, C. "Laying out a circuit." In IEE Colloquium on MMICs (Monolithic Microwave Integrated Circuits). IEE, 1995. http://dx.doi.org/10.1049/ic:19951417.

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Tomimuro, Hisashi. "Packaging technology for GaAs MMIC (monolithic microwave integrated circuits) modules." In Boston - DL tentative, edited by Stuart K. Tewksbury and John R. Carruthers. SPIE, 1991. http://dx.doi.org/10.1117/12.25578.

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4

Smith, D. "Passive circuit design - a Lange 3 dB coupler." In IEE Colloquium on MMICs (Monolithic Microwave Integrated Circuits). IEE, 1995. http://dx.doi.org/10.1049/ic:19951412.

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Schlechtweg, M. "Linear circuit design - a multistage low noise amplifier." In IEE Colloquium on MMICs (Monolithic Microwave Integrated Circuits). IEE, 1995. http://dx.doi.org/10.1049/ic:19951413.

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Minnis, B. J. "Large signal circuit design - medium power, class A amplification." In IEE Colloquium on MMICs (Monolithic Microwave Integrated Circuits). IEE, 1995. http://dx.doi.org/10.1049/ic:19951414.

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Clem, P. G., J. Sigman, and C. D. Nordquist. "Integrated (Ba,Sr) TiO3 (BST) films on copper and alumina for monolithic microwave integrated circuit (MMIC) applications." In 2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics. IEEE, 2007. http://dx.doi.org/10.1109/isaf.2007.4393214.

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Ooi, B. L. "A novel RF/microwave monolithic integrated circuit (MMIC) design, theory and characterization course in National University of Singapore." In Third Conference on Engineering Education - Access, Retention and Standards. IEE, 2003. http://dx.doi.org/10.1049/ic:20030213.

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Lee Hock Guan, Mohd Nizam Osman, Asban Dolah, Ahmad Ismat Abdul Rahim, Mohamed Razman Yahya, and Abdul Fatah Awang Mat. "Characterization of Si3N4 Metal-Insulator-Metal (MIM) Capacitors for Monolithic Microwave Integrated Circuits (MMIC) Applications." In 2006 IEEE International Conference on Semiconductor Electronics. IEEE, 2006. http://dx.doi.org/10.1109/smelec.2006.380683.

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10

Chhong, Tan Ewe. "Electrostatic Discharge (ESD) Damage Simulation on RF MMIC Device." In ISTFA 2004. ASM International, 2004. http://dx.doi.org/10.31399/asm.cp.istfa2004p0660.

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Abstract This paper presents electrostatic discharge (ESD) damage simulation results on good units of the RF monolithic microwave integrated circuit device. Two ESD test models, human body model and machine model, simulators were used to simulate the ESD damage on the good units of the RF MMIC devices in different pin configurations. The paper presents the failure analysis results on the field returned units, the ESD damage simulation results, and the failure analysis results on radio frequency operating life failure units. Based on the simulation results obtained, it was concluded that the ESD wounded devices would exhibit a short failure (catastrophic failure) and a low Id failure (latent failure) after being used in the application or field. It is recommended that the static electricity should be eliminated in the workplace at customer site by grounding the operators, equipment and devices in order to prevent the ESD damage.
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Reports on the topic "MMIC (Monolithic Microwave Integrated Circuit)"

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Penn, John E. Distributed Amplifier Monolithic Microwave Integrated Circuit (MMIC) Design. Defense Technical Information Center, 2012. http://dx.doi.org/10.21236/ada570161.

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Penn, John E. Monolithic Microwave Integrated Circuits (MMIC) Broadband Power Amplifiers. Defense Technical Information Center, 2012. http://dx.doi.org/10.21236/ada571906.

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Penn, John E. Monolithic Microwave Integrated Circuits (MMIC) Broadband Power Amplifiers (Part 2). Defense Technical Information Center, 2013. http://dx.doi.org/10.21236/ada585852.

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