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Robinson, Jayne Helen. "Artifical intelligence applied to MMIC layout." Thesis, Queen's University Belfast, 1995. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.295424.
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Kang, Qinghua (George). "Characterization of Vertical Interconnects in 3-D Monolithic Microwave Integrated Circuits (3-D MMIC)." University of Cincinnati / OhioLINK, 2003. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1053630359.
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Ahmad, Norhawati Binti. "Modelling and design of Low Noise Amplifiers using strained InGaAs/InAlAs/InP pHEMT for the Square Kilometre Array (SKA) application." Thesis, University of Manchester, 2012. https://www.research.manchester.ac.uk/portal/en/theses/modelling-and-design-of-low-noise-amplifiers-using-strained-ingaasinalasinp-phemt-for-the-square-kilometre-array-ska-application(b2b50fd8-0a13-4f71-b3f0-616ee4b2a82b).html.
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The largest 21st century radio telescope, the Square Kilometre Array (SKA) is now being planned, and the first phase of construction is estimated to commence in the year 2016. Phased array technology, the key feature of the SKA, requires the use of a tremendous number of receivers, estimated at approximately 37 million. Therefore, in the context of this project, the Low Noise Amplifier (LNA) located at the front end of the receiver chain remains the critical block. The demanding specifications in terms of bandwidth, low power consumption, low cost and low noise characteristics make the LNA topologies and their design methodologies one of the most challenging tasks for the realisation of the SKA. The LNA design is a compromise between the topology selection, wideband matching for a low noise figure, low power consumption and linearity. Considering these critical issues, this thesis describes the procedure for designing a monolithic microwave integrated circuit (MMIC) LNA for operation in the mid frequency band (400 MHz to 1.4 GHz) of the SKA. The main focus of this work is to investigate the potential of MMIC LNA designs based on a novel InGaAs/InAlAs/InP pHEMT developed for 1 µm gate length transistors, fabricated at The University of Manchester. An accurate technique for the extraction of empirical linear and nonlinear models for the fabricated active devices has been developed. In addition to the linear and nonlinear model of the transistors, precise models for passive devices have also been obtained and incorporated in the design of the amplifiers. The models show excellent agreement between measured and modelled DC and RF data. These models have been used in designing single, double and differential stage MMIC LNAs. The LNAs were designed for a 50 Ω input and output impedance. The excellent fits between the measured and modelled S-parameters for single and double stage single-ended LNAs reflects the accurate models that have been developed. The single stage LNA achieved a gain ranging from 9 to 13 dB over the band of operation. The gain was increased between 27 dB and 36 dB for the double stage and differential LNA designs. The measured noise figures obtained were higher by ~0.3 to ~0.8 dB when compared to the simulated figures. This is due to several factors which are discussed in this thesis. The single stage design consumes only a third of the power (47 mW) of that required for the double stage design, when driven from a 3 V supply. All designs were unconditionally stable. The chip sizes of the fabricated MMIC LNAs were 1.5 x 1.5 mm2 and 1.6 x 2.5 mm2 for the single and double stage designs respectively. Significantly, a series of differential input to single-ended output LNAs became of interest for use in the Square Kilometre Array (SKA), as it utilises differential output antennas in some of its configurations. The single-ended output is preferable for interfacing to the subsequent stages in the analogue chain. A noise figure of less than 0.9 dB with a power consumption of 180 mW is expected for these designs.
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Lauterbach, Adam Peter. "Low-cost SiGe circuits for frequency synthesis in millimeter-wave devices." Australia : Macquarie University, 2010. http://hdl.handle.net/1959.14/76626.
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"2009"Thesis (MSc (Hons))--Macquarie University, Faculty of Science, Dept. of Physics and Engineering, 2010.
Bibliography: p. 163-166.
Introduction -- Design theory and process technology -- 15GHz oscillator implementations -- 24GHz oscillator implementation -- Frequency prescaler implementation -- MMIC fabrication and measurement -- Conclusion.
Advances in Silicon Germanium (SiGe) Bipolar Complementary Metal Oxide Semiconductor (BiCMOS) technology has caused a recent revolution in low-cost Monolithic Microwave Integrated Circuit (MMIC) design. -- This thesis presents the design, fabrication and measurement of four MMICs for frequency synthesis, manufactured in a commercially available IBM 0.18μm SiGe BiCMOS technology with ft = 60GHz. The high speed and low-cost features of SiGe Heterojunction Bipolar Transistors (HBTs) were exploited to successfully develop two single-ended injection-lockable 15GHz Voltage Controlled Oscillators (VCOs) for application in an active Ka-Band antenna beam-forming network, and a 24GHz differential cross-coupled VCO and 1/6 synchronous static frequency prescaler for emerging Ultra Wideband (UWB) automotive Short Range Radar (SRR) applications. -- On-wafer measurement techniques were used to precisely characterise the performance of each circuit and compare against expected simulation results and state-of-the-art performance reported in the literature. -- The original contributions of this thesis include the application of negative resistance theory to single-ended and differential SiGe VCO design at 15-24GHz, consideration of manufacturing process variation on 24GHz VCO and prescaler performance, implementation of a fully static multi-stage synchronous divider topology at 24GHz and the use of differential on-wafer measurement techniques. -- Finally, this thesis has llustrated the excellent practicability of SiGe BiCMOS technology in the engineering of high performance, low-cost MMICs for frequency synthesis in millimeterwave (mm-wave) devices.
Mode of access: World Wide Web.
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Philippon-Martin, Audrey. "Étude d’une nouvelle filière de composants sur technologie nitrure de gallium : conception et réalisation d’amplificateurs distribués de puissance large bande à cellules cascodes en montage flip-chip et technologie MMIC." Limoges, 2007. https://aurore.unilim.fr/theses/nxfile/default/862a35bd-117b-4bc6-b2a0-044747ee2ff7/blobholder:0/2007LIMO4025.pdf.
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Ces travaux de recherche se rapportent à l’étude de transistors HEMTs en Nitrure de Gallium pour l’amplification de puissance micro-onde. Une étude des caractéristiques des matériaux grand gap et plus particulièrement du GaN est réalisée afin de mettre en exergue l’adéquation de leurs propriétés pour des applications de puissance hyperfréquence telle que l’amplification large bande. Dans ce contexte, des résultats de caractérisations et modélisations électriques de composants passifs et actifs sont présentés. Les composants passifs dédiés aux conceptions de circuits MMIC sont décrits et différentes méthodes d’optimisation que ce soit au niveau électrique ou électromagnétique sont explicitées. Les modèles non linéaires de transistors impliqués dans nos conceptions sont de même détaillés. Le fruit de ces travaux concerne la conception d’amplificateurs distribués de puissance large bande à base de cellules cascode de HEMTs GaN, l’un étant reportés en flip-chip sur un substrat d’AlN, le second en technologie MMIC. La version MMIC permet d’atteindre 6. 3W sur la bande 4-18GHz à 2dB de compression. Ces résultats révèlent les fortes potentialités attendues des composants HEMTs GaNThe aim of this study is to assess the potentialities of HEMTs AlGaN/GaN transistors for RF power applications. The properties of wide band-gap materials and especially the GaN material are analysed in order to highlight their capabilities for applications to wideband power amplifiers. Modeling of passive components is explained and the design guide library on SiC substrate is implemented. Characterization results as well as linear and nonlinear simulations are presented on devices and circuits. The results of this work give concrete expression to the design of wideband power amplifiers showing a distributed architecture of cascode cells using GaN HEMTs, the first one flip-chip mounted onto an AlN substrate and the second one in MMIC technology. One MMIC version allows to obtain 6. 3W over a 4 to 18GHz bandwidth at 2dB compression input power. These results bring to light famous potentialities assigned to HEMTs GaN components
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SaÌnchez-HernaÌndez, David A. "Active microstrip patch antennas for monolithic microwave integrated circuits (MMICs)." Thesis, King's College London (University of London), 1996. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.362513.
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Manfrin, Stilante Koch. "Proposta e implementação de um receptor optoeletrônico integrado para redes ópticas passivas (PONs) empregando multiplexação por divisão de comprimento de onda (WDM)." Universidade de São Paulo, 2003. http://www.teses.usp.br/teses/disponiveis/18/18133/tde-01122015-101424/.
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O presente trabalho descreve o desenvolvimento e implementação de duas configurações distintas de um receptor optoeletrônico integrado. A primeira configuração é similar a um projeto encontrado na literatura mas apresenta diversas modificações que lhe conferiram melhor desempenho em comparação ao projeto original. A segunda configuração é uma nova proposta deste trabalho. O receptor foi desenvolvido e implementado visando sua aplicação em redes de comunicações ópticas passivas (PONs) de alta velocidade comutadas a pacote, para possibilitar a utilização da técnica de multiplexação em comprimento de onda (WDM), aumentando assim a capacidade de transmissão da rede, em particular no ramo de ligação da rede de serviços com o usuário final, denominado rede de acesso. O principal objetivo do receptor aqui desenvolvido foi proporcionar uma sintonia rápida entre os canais disponíveis na rede, possibilitando sua seleção num tempo inferior àquele necessário para a transmissão de um único pacote de informação, diminuindo assim o atraso de sintonia e, por conseguinte, a perda de informação. Para tanto, os circuitos integrados implementados e caracterizados referem-se aos circuitos de chaveamento eletrônico e do amplificador de transimpedância das duas configurações investigadas. Os dados experimentais obtidos para as duas configurações confirmaram a previsão de chaveamento dos canais de entrada num intervalo de tempo da ordem de alguns nanosegundos, o que é totalmente compatível com a velocidade de transmissão das aplicações a que se destina este receptor (aproximadamente 5 Gbits/s). Adicionalmente, são apresentados os dados experimentais relativos à freqüência de corte, ganho direto, isolação, relação on/off e características de ruído dos circuitos implementados.The present work describes the design and implementation of two configurations of an integrated optoelectronic receiver. The first one is similar to a previously reported design but with some modifications to improve its performance. The second one is a new proposal of this work. The goal of the receiver design and implementation was its application in high bit rate packet-switched passive optical networks (PONs) employing the wavelength division multiplexing (WDM) technique to increase the network capacity, in particular on the connection branch of the network core with the final user, the access network. The main goal of the receiver design was to achieve a fast channel tuning, allowing a tuning time smaller than the required for the transmission of a single information packet, decreasing the tuning latency and, therefore, the rate of information packet loss. In order to accomplish this goal, the implemented and tested integrated circuits include the electronic switching circuit and the transimpedance amplifier for both configurations investigated. The measured data for both configurations confirm the expected input channel switching time results, of about a few nanoseconds, which is certainly useful for the expected bit rate of operation (approximate 5 Gbps). Additionally, experimental results concerning cutoff frequency and bandwidth, direct gain, isolation, on/off ratio, and noise characteristics of both implemented circuits are presented.
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Malmqvist, Robert. "Tuneable recursive active monolithic microwave integrated circuit filters /." Linköping : Univ, 2001. http://www.bibl.liu.se/liupubl/disp/disp2001/tek698s.pdf.
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Shorthouse, David Brian. "The CAD and analysis of passive monolithic microwave integrated circuits by the finite difference time domain technique." Thesis, University of Bristol, 1992. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.362984.
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Brennan, Michael. "Automating the MMIC design process using expert systems." Thesis, Queen's University Belfast, 1993. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.333787.
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Economides, Sophia Betty. "Design and application of multilayer monolithic microwave integrated circuit transformers." Thesis, King's College London (University of London), 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.312971.
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Aja, Abelán Beatriz. "Amplificadores de banda ancha y bajo ruido basados en tecnología de GaAs para aplicaciones de radiometría." Doctoral thesis, Universidad de Cantabria, 2007. http://hdl.handle.net/10803/10664.
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En esta Tesis se ha realizado análisis, diseño y caracterización de los amplificadores de bajoruido y banda ancha en tecnología de GaAs PHEMT con aplicación a los módulos posteriores delradiómetro del instrumento de baja frecuencia del satélite Planck. La Tesis se compone de las siguientes partes:- Introducción y estudio del funcionamiento del radiómetro del instrumento de baja frecuencia de Planck.- Diseño y caracterización de amplificadores de bajo ruido utilizando tecnología de GaAs. Se presentan diseños MMIC en la banda Ka y en la banda Q, y un diseño MIC en la banda Q.- Diseño y construcción de los módulos posteriores en las bandas de 30 y 44 GHz. Se presentan varios prototipos fabricados en ambas bandas, así como medidas de cada uno de los subsistemas que los forman.- Desarrollo de técnicas de medida para receptores de banda ancha con detección directa y su aplicación a la caracterización de los módulos posteriores, mostrando el funcionamiento de los prototipos representativos para las dos bandas de frecuencia.- Integración de los módulos posteriores con los módulos frontales y presentación de algunos de los resultados de medida de los radiómetros completos.This Thesis deals with the analysis, design and characterization of broadband low noise amplifiersin GaAs PHEMT technology with application to the radiometer Back-End Modules for the Planck Low Frequency Instrument (LFI). The Thesis is composed of the next parts:- Introduction and study about the radiometer of the Planck low frequency instrument.- Design and characterization of low noise amplifiers using GaAs technology. Ka-band MMIC designs and Q-band MMIC and a MIC design are presented.- Design and assembly of the 30 and 44 GHz back-end modules. Several prototypes have been manufactured in both frequency bands and the most representative test results of each subsystem are presented.- Development of measurement techniques for broadband direct detection receivers and their application to the characterization of the back-end modules. Performance of representative prototypes in both frequency bands is included.- Integration of the back end modules and front end modules and significant results of the tests for a radiometer in each frequency band.
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Dehan, Morin. "Characterization and modeling of SOI RF integrated components." Université catholique de Louvain, 2003. http://edoc.bib.ucl.ac.be:81/ETD-db/collection/available/BelnUcetd-11242003-143745/.
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The boom of mobile communications leads to an increasing request of low cost and low power mixed mode integrated circuits. Maturity of SOI technology, and recent progresses of MOSFET's microwave performances, explain the success of silicon as compared to III-V technologies for low-cost multigigahertz analog applications. The design of efficient circuits requires accurate, wide-band models for both active and passive elements. Within this frame, passive components fabricated in SOI technologies have been studied, and a physical model of integrated square spiral inductors has been developed. Also, the performances of integrated MOSFETs have been analyzed. New alternative structures of transistor (the Graded Channel MOSFET and the Dynamic Threshold MOSFET) have been proposed and studied from Low to High frequencies. These transistors show very interesting properties for analog, low power, low voltage, and microwave applications. Furthermore, as their fabrication processes are fully CMOS compatible, they allow us to increase the performances of a CMOS technology without any modification of its process, and without extra-cost.
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Haque, Talha. "Silicon-based Microwave/Millimeter-wave Monolithic Power Amplifiers." Thesis, Virginia Tech, 2007. http://hdl.handle.net/10919/31174.
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There has been increased interest in exploring high frequency (mm-wave) spectrum (particularly the 30 and 60 GHz ranges), and utilizing silicon-based technology for reduced-cost monolithic millimeter integrated circuits (MMIC), for applications such as WLAN, inter-vehicle communication (IVC) automotive radar and local multipoint distribution system (LMDS). Although there has been a significant increase in silicon-based implementations recently, this area still has significant need for research and development. For example, one microwave/mm-wave front-end component that has seen little development in silicon is the power amplifier (PA).
Two potential technologies exist for providing a solution for low-cost microwave/mm-wave power amplifiers: 1) Silicon-Germanium (SiGe) HBT and 2) Complementary metal-oxide semiconductor (CMOS). SiGe HBT has become a viable candidate for PA development since it exhibits higher gain and higher breakdown voltage limits compared to CMOS, while remaining compatible with BiCMOS technology. Also, SiGe is potentially lower in cost compared to other compound semiconductor technologies that are currently used in power amplifier design. Hence, this research focuses on design of millimeter-wave power amplifiers in SiGe HBT technology.
The work presented in this thesis will focus on design of different power amplifiers for millimeter-wave operating frequencies. Amplifiers present the fundamental trade-off between linearity and efficiency. Applications at frequencies highlighted above tend to be point-to-point, and hence high linearity is required at the cost of lowered efficiency for these power amplifiers. The designed power amplifiers are fully differential topologies based on finite ground coplanar waveguide (FGC) transmission line technology, and have on-chip matching networks and bias circuits. The selection and design of FGC lines is supported through full-wave EM simulations. Tuned single stub matching networks are realized using FGC technology and utilized for input and output matching networks.
Two 30-GHz range SiGe HBT PA designs were carried out in Atmel SiGe2RF and IBM BiCMOS 8HP IC technologies. The designs were characterized first by simulations. The performance of the Atmel PA design was characterized using microwave/mm-wave on wafer test measurement setup. The IBM 8HP design is awaiting fabrication. The measured results indicated high linearity, targeted output power range, and expected efficiency performance were achieved. This validates the selection of SiGe HBT as the technology of choice of high frequency point-to-point applications. The results show that it is possible to design power amplifiers that can effectively work at millimeter-wave frequencies at lower cost for applications such as mm-wave WLAN and IVC where linearity is important and required transmitted power is much lower than in cellular handset power amplifiers. Moreover, recommendations are made for future research steps to improve upon the presented designs.Master of Science
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Tan, Hiang Teik. "Modulation doped AlGaAs/InGaAs charge coupled device transversal filters for monolithic microwave integrated circuit applications." Thesis, University of Leeds, 2006. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.432647.
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Wang, Jue. "Monolithic microwave/millimetrewave integrated circuit resonant tunnelling diode sources with around a milliwatt output power." Thesis, University of Glasgow, 2014. http://theses.gla.ac.uk/5149/.
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Resonant tunnelling diode (RTD) oscillators are considered to be one of the most promising solid-state terahertz sources which can operate at room temperature. The main limitation of RTD oscillators up to now is their low output power. For the published terahertz (THz) RTD oscillators, the output power is in the range of micro-Watts. This thesis describes systematic work on RTD device modelling, and on the design, fabrication and measurement of high power monolithic microwave integrated circuit (MMIC) RTD oscillators. The RTD device consists of a narrow bandgap layer (quantum well) sandwiched between two thin wide bandgap layers (barriers). When the device is biased, electrons with kinetic energy lower than the barriers may tunnel through the double barrier-quantum well (DBQW) structure, and the device exhibits a negative differential resistance (NDR) in this case. To investigate this phenomenon, a new numerical model based on quantum mechanics was developed. The model involves self-consistent solving of the Schrodinger equation until the quasi-eigen energy state converges. This model is expected to serve to optimize the RTD device structure for millimetre-wave and terahertz applications. Besides RTD device modelling, the fabrication process for single devices and for MMIC RTD oscillator circuits was developed and optimized on this project. Optical lithography, wet/dry etching and metallization were the main fabrication techniques utilized. For device sizes of a few square microns, the fabrication process required the development of new steps, i.e, via opening through polyimide. The fabrication process was optimized and high yield was obtained. On this project, one of the challenges was to realize RTD oscillators in the form of MMICs, aiming at about 100 GHz with milli-Watts output power, in accordance with a recently proposed power combining circuit topology. To accomplish such an oscillator, proper design of passive components was essential. On this project, these components included 50 coplanar waveguides (CPW), shorted CPW stubs, metal-insulator-metal (MIM) capacitors and thin _lm resistors. The design procedure for these components is described, and their performance characterized by DC or scattering parameter measurements as appropriate. Two types of MMIC RTD oscillator layouts were designed, fabricated and characterized. Details are described in this thesis. Measurement results showed that for the fabricated 75 GHz oscillator, the output power obtained was -0.2 dBm (0.96 mW), and for the 86 GHz oscillator, the measured output power was -4.6 dBm (0.35 mW), both of which, to the author's knowledge, were the highest power for published indium phosphide (InP)-based RTD oscillators operating in the W-band frequency range.
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Roy, Langis J. P. (Langis Julien Pare) 1965 Carleton University Dissertation Engineering Electrical. "A Low-current amplifier for mobile radio and monolithic microwave integrated circuit design techniques in the UNF and L bands." Ottawa.:, 1989.
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Kervella, Gaël. "Circuits intégrés photoniques sur InP pour la génération de signaux hyperfréquences." Thesis, Rennes 1, 2016. http://www.theses.fr/2016REN1S008/document.
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Cette thèse s'inscrit dans le cadre de l'optique micro-onde. Nous avons mis en oeuvre différentes solutions opto-électroniques dans le but de réaliser un synthétiseur hyperfréquence monolithiquement intégré, faiblement bruité et largement accordable jusqu'au domaine millimétrique. Le synthétiseur est basé sur l'intégration sur InP de deux lasers DFB, d'un coupleur optique et d'une photodiode rapide. En outre, un modulateur électro-optique est également implémenté sur la puce afin de transmettre un signal de données sur la porteuse générée. Les performances obtenues en terme de gamme d'accord et de transmission de données sans fil se sont révélées conformes aux objectifs. Ainsi, une gamme d'accord de 0 à 110 GHz et un débit de transmission de donnée sans fil à courte distance de 1 Gbit/s ont pu être démontrés, établissant notre système à l'état de l'art mondial pour ce type de composant totalement intégré. Les performances en terme de bruit de phase se sont en revanche révélées décevantes. Pour remédier à ce problème nuisant à la montée en débit supérieurs, nous avons investigué deux solutions de stabilisation de la fréquence porteuse. La première, basée sur un asservissement électronique (OPLL) de la puce, s'est pour le moment révélé infructueuse, mais a permis d'étudier plus avant les problématiques qui lui sont liées. La seconde solution, basée sur un système inédit de rétroinjection optique mutuelle et une stabilisation sur un oscillateur électronique externe a quant à elle répondu à nos souhaits. En effet, la stabilisation de la fréquence porteuse par cette technique a permis de démontré des largeurs de raies inférieure à 30 Hz et un bruit de phase réduit à -90 dBc/Hz à 10 kHz d'une porteuse accordée à 90 GHz. A la suite de ces travaux sur une première génération de composants, une deuxième génération a été développée afin d'améliorer les performances intrinsèques de la puce en remédiant aux limitations observées jusqu'alors. Ainsi, une nouvelle configuration de cavité a été conçue intégrant notamment des lasers plus longs ainsi que des miroirs haute réflectivité. Par ailleurs, une optimisation de la structure de la photodiode a été réalisée afin d'améliorer encore sa bande passante. Une telle source permet d’envisager la génération et la modulation de signaux microonde faible bruit de phase et largement accordables sur des composants monolithiquement intégrés répondant aux exigences de compacité, de reproductibilité et de performances haut débit requises par les industries des télécommunications, de la défense ou encore du domaine spatialThis thesis deals with the microwave photonics context. We have implemented various opto- electronic solutions in order to realize a monolithically integrated microwave synthesizer which has a low noise and a wide tunability until millimeter-wave frequencies. The synthesizer is based on the integration of two InP DFB lasers, an optical coupler and a fast photodiode. In addition, an electro-optic modulator is also implemented on the chip in order to transmit data on the generated carrier. The performances obtained in terms of tunability and wireless data transmission proved consistent with the objectives. Thus, a tuning range of 0-110 GHz and a short distance wireless data transmission rate of 1 Gbit /s have been demonstrated, establishing our system to the state of the art for this type of fully integrated component. Phase noise and linewidth performances have however been disappointing. To solve this problem affecting the data rate we have investigated two ways of stabilizing the carrier frequency. The first, based on an electronic feedback loop (OPLL) has yet proved unsuccessful but allowed us to further explore the related issues. However, the second solution, based on a new system of optical cross injection and stabilization to an external electronic oscillator has filled our wishes. Indeed, the stabilization of the carrier frequency by this technique has demonstrated linewidth less than 30 Hz and a reduced phase noise to -90 dBc / Hz at 10 kHz for a given carrier at 90 GHz. Next to the first generation components, a second generation was developed to improve the intrinsic performances of the chip by remedying the limitations previously observed. Thus, a new cavity configuration was designed including longer lasers and high reflectivity integrated mirrors made by materials deep etching. Moreover, optimization of the photodiode structure was carried out to further improve the bandwidth. Such a source allows to consider the generation and modulation of low phase noise and widely tunable microwave signals on monolithically integrated components matching the compactness, reproducibility and high speed performances required by the telecom, defense and space industries
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Pérennec, André. "Synthèse et réalisations d'amplificateurs micro-ondes par la méthode des fréquences réelles." Brest, 1988. http://www.theses.fr/1988BRES2022.
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La premiere utilisee decrit la synthese d'amplificateurs large bande a un etage ou des circuits de contre reaction sont inclus. La deuxieme methode, dite des frequences reelles simplifiees, permet d'etendre la conception aux amplificateurs multietages. Deux amplificateurs a un et trois etages ont ete concus a l'aide du logiciel "freel" ( frequences reelles) dans la bande 6mhz-6ghz pour un dispositif de transmission numerique par filtre optique realises en technologie hybride et monolithique
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Connor, Mark Anthony. "Design of Power-Scalable Gallium Nitride Class E Power Amplifiers." University of Dayton / OhioLINK, 2014. http://rave.ohiolink.edu/etdc/view?acc_num=dayton1405437893.
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Bahlak, Samia. "Contribution à l'étude d'un modulateur acousto-optique à puits quantiques." Valenciennes, 1997. https://ged.uphf.fr/nuxeo/site/esupversions/a93e0d34-1079-4e51-b081-345993233dd1.
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Notre travail s'inscrit dans la mise au point de nouveaux circuits intégrées monolithiques de traitement du signal dans la gamme du Ghz. Il porte sur l'étude d'un modulateur acousto-électro-optique formé de multi-puits quantiques ou nous exploitons l'effet du confinement quantique et le phénomène de résonance excitonique. L'absorption optique est modulée par l'effet Stark et les déformations induits par une onde acoustique de surface. Un outil théorique d'optimisation de la structure du modulateur a été mis au point. La méthode des éléments finis est utilisée pour calculer les niveaux énergétiques des bandes de conduction et de valence et les fonctions d'onde électroniques correspondantes tandis que les énergies de liaisons excitoniques sont calculées par la méthode variationnelle. L'influence des différents paramètres sur l'absorption optique est étudiée. L'optimisation donne des résultats très satisfaisants : rapport de contraste de 18db et variation de transmittance de 0,75. Deux prototypes ont été réalisés dans le but de différencier les effets physiques mis en jeu. La caractérisation du composant par photoluminescence et photoréflectance met en évidence la faisabilité du modulateur acousto-electro-optique à puits quantiques et montre la bonne qualité des prototypes réalisés.
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Visan, Silviu. "Simulation électromagnétique 3D basée sur la méthode des différences finies dans le domaine temporel : application à l'étude de structures planaires utilisées dans les circuits intégrés monolithiques microondes et millimétriques." Grenoble INPG, 1994. http://www.theses.fr/1994INPG0014.
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Ce travail de these a permis la mise au point et l'implementation d'une methode de simulation electromagnetique tridimensionnelle basee sur les differences finies dans le domaine temporel (fdtd - finite difference time domain). Le logiciel qui a ete realise sert a caracteriser des structures planaires, notamment celles utilisees dans les circuits integres monolithiques microondes (mmic - microwave monolithic integrated circuits). Le chapitre 1 presente le contexte de l'etude. Dans le chapitre 2 nous presentons en detail la methode qui est a la base de nos simulations. Il resulte qu'elle presente des avantages importants: tres bonne generalite, caracterisation large bande d'une structure apres une seule simulation, possibilite de prendre en compte a la fois des structures fermees et des structures ouvertes. Dans le chapitre 3, la methode a ete validee par l'etude d'une cavite resonante a 30 ghz, d'une ligne microruban uniforme, et d'un trou metallise sur une ligne microruban. Dans le chapitre 4, une etude complete a ete effectuee sur les structures coplanaires utilisees dans les mmic. Nous avons etudie des lignes uniformes, des discontinuites uniaxiales (court- circuit, circuit ouvert, gap, saut de largeur) et des discontinuites multiaxiales (coude angle droit, te, avec ou sans ponts a air). Une etude comparative a ete realisee entre deux solutions possibles pour la suppression du mode fentes couplees dans les mmic: le pont a air et les trous metallises. Le chapitre 5 presente l'etude des interconnexions entre des modules mmic et des modules hybrides. On a ainsi presente les variations des parametres s de l'interconnexion en fonction des parametres technologiques de celle-ci. Dans le chapitre 6, la simulation d'une antenne planaire a donne des resultats tout a fait conformes aux mesures experimentales. Les conclusions de ce travail sont presentees dans le chapitre 7
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Laporte, Christophe. "Conception en technologie intégrée de circuits hyperfréquences pour la télémesure image d'un instrument spatial." Phd thesis, Université Paul Sabatier - Toulouse III, 1995. http://tel.archives-ouvertes.fr/tel-00144088.
Full textAbstract:
L'objectif de cette étude est la réalisation en technologie monolithique intégrée de circuits hyperfréquences pour la télémesure d'un instrument spatial. L'étude a plus particulièrement porté sur la conception d'oscillateurs à fréquences fixes et d'oscillateurs contrôlés en tension entièrement intégrés dans la bande de fréquence 8-8,4 GHz. Une nouvelle méthode de conception des oscillateurs hyperfréquences, basée sur le calcul analytique des conditions d'oscillations de l'oscillateur, est présentée. Le calcul formel est utilisé pour accéder au rôle de chacun des éléments du circuit ainsi qu'à leur sensibilité sur les performances électriques. Les résultats théoriques et expérimentaux sont en très bon accord et démontrent la faisabilité d'oscillateurs à fréquences fixes et d'oscillateurs contrôlés en tension à résonateurs intégrés sur une puce. Cette méthode est également appliquée avec succès pour la réalisation d'un oscillateur intégré à 2 GHz. Une autre partie du travail a porté sur la réalisation de modulateurs biphases et quadriphases monolithiques. Les résultats de mesure sont conformes aux simulations et répondent aux spécifications de la télémesure
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Seyfollahi, Alireza. "Monolithic microwave integrated circuit (MMIC) low noise amplifier (LNA) design for radio astronomy applications." Thesis, 2018. https://dspace.library.uvic.ca//handle/1828/9278.
Full textAbstract:
The presentation highlights research on theory, design, EM
modeling, fabrication, packaging, and measurement of GaAs Monolithic
Microwave Integrated Circuits (MMICs). The goal of this work is to design MMIC LNAs with low noise figure, high gain, and wide bandwidth.
The work aims to develop GaAs MMIC LNAs for the application of RF front-end receivers in radio telescopes. GaAs MMIC technology offers modern radio astronomy attractive solutions based on its advantage in terms of high operational frequency, low noise, excellent repeatability and high integration density. Theoretical investigations are performed,
presenting the formulation and graphical methods, and focusing on a
systematic method to design a low noise amplifier for the best noise,
gain and input/output return loss. Additionally, an EM simulation method is utilized and successfully applied to MMIC designs. The effect of packaging including the wire bond and chassis is critical as the frequency increases. Therefore, it is modeled by full-wave analysis where the measured results verify the reliability of these models. The designed MMICs are validated by measurements of several prototypes,
including three C/X band and one Q band MMIC LNAs. Moreover, comparison
to similar industrial chips demonstrates the superiority of the proposed
structures regarding bandwidth, noise and gain flatness, and making them
suitable for use in radio astronomy receivers.Graduate
2020-05-01
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Ping, Yu Wen, and 尤文平. "The Study and Implementation of 5.25GHz and 5.8GHz power amplifier by monolithic microwave integrated circuit (MMIC) technology." Thesis, 2001. http://ndltd.ncl.edu.tw/handle/13301682085268674923.
Full textAbstract:
碩士元智大學
電機工程研究所
89
Power amplifier is the key component of wireless communication system, which is usually used in the RF transmitter. In this work we will study and implement the 5.25GHz and 5.8GHz power amplifier by monolithic microwave integrated circuit (MMIC) technology.The effect of second harmonic spurs for different kinds of output and interstage matching network are evaluated . The specification of the designed power amplifier are fulfilled the requirements of IEEE 802.11a standard，which uses OFDM modulation on the 5.7GHz ISM band.High linearity, low voltage (3.3V) MMIC power amplifiers have been implemented in this research .The nonlinear large signal model of InGaP/GaAs HBT is used to simulate and analyze the performance of designed circuits. The chip size of this power MMIC is about 1042μm×610μm. The output power is 23dBm while the input power is 2dBm; the circuit layout and processes are completed by local foundry service in Taiwan.
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HO, STANLEY. "Low-Noise Mixing Circuits in CMOS Microwave Integrated Circuits." Thesis, 2009. http://hdl.handle.net/1974/5089.
Full textAbstract:
In this thesis, three low-noise active mixing circuits are presented in CMOS technology. Mixers can be found at the front-end of almost every communication systems. However, despite many advantages the active mixers have, one drawback is their poor noise performance. One mixer that has been widely used in integrated circuit is the Gilbert cell. This thesis demonstrated that by merging the low-noise amplifier (LNA) with the Gilbert cell, a low-noise active mixer can be realized. This kind of mixer relaxes the front-end design, allows higher circuit integration, and reduces power consumption.
The first circuit is a narrowband low-noise mixer that operates at 5.4 GHz in 0.18 um CMOS. An inductive degenerated LNA is used as the transconductor. Together with a current bleeding circuit, a gain of 13.1 dB and a low 7.8 dB single-sideband noise figure are achieved. The circuit was fabricated and measured. Simulation and measurement results are compared and discussed.
The second circuit is a broadband low-noise mixer that operates between 1 and 5.5 GHz in 0.13 um CMOS. The noise-cancelling technique is used to design the transconductors. This technique does not require the use of inductors while able to achieve a sub 3 dB noise figure and input matching over a large bandwidth. To further extend the mixer bandwidth, the series inductive peaking was used. Measured and simulated results showed great agreement. It has a high gain of 17.5 dB, a bandwidth of 4.5 GHz, and a low average double-sideband noise figure of 3.9 dB. This mixer has the best broadband noise performance ever reported in CMOS.
Finally, a double-balanced low-noise self-oscillating mixer (SOM) in 0.13 um CMOS is presented. This is a current-reuse, highly integrated circuit that combines an LNA, mixer, and oscillator seamlessly into a single component. The oscillator generates the required LO while serving as the mixer load simultaneously. Measured and simulated results showed excellent agreement. A low double-sideband noise figure of 4.4 dB and a gain of 11.6 dB were measured. This type of SOM and loading structure are the first ever reported.Thesis (Master, Electrical & Computer Engineering) -- Queen's University, 2009-08-23 12:41:20.445
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Cang, Yao-Tien, and 張耀天. "Design and Implementation of the SiGe 0.35 um Monolithic Microwave Integrated Circuits (MMIC) Amplifiers of RF Front-end." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/01110702443823195660.
Full textAbstract:
碩士逢甲大學
通訊工程所
97
This thesis presents the designs and implementations of RF front-end amplifier by TSMC SiGe BiCMOS 0.35 um technology. In this study, we had designed and implemented an Ultra Wideband (UWB) Low noise amplifier (LNA), a WiMAX Power Amplifier (PA) and integrated a WiMAX front-end circuit composed of single pole double throw (SPDT) switch, LNA and PA. In the UWB LNA circuit, the circuit employed 4 stages cascade structure for bandwidth and conversion gain improvement. The experimental results show a 20 dB conversion gain from 1 to 11 GHz, and a 1.58 dB minimum noise figure. In the WiMAX 3.5 GHz PA, in order to improve output power and linearity, the circuit employed driver stage and power stage. Each stage contained active linearity bias and multitude of parallel transistors to improve device linearity and power capability. The results show a maximum output power of 23.7 dBm, and a output 1-dB compression point of 22.3 dBm, and furthermore 44.4% of Power Added Efficiency (PAE). The WiMAX 3.5 GHz RF front-end MMIC integrated with LNA, PA and SPDT switch. The SPDT switch utilizes a series-shunt configuration, not only to provide suitable insertion loss between TX and RX path, but also have good isolation between TX and RX path. The results show better than -75 dB isolation between TX and RX path. The results of RX mode show a 12.2 dB conversion gain and a 6.8 dB noise figure. The results of TX mode show a 18.6 dBm maximum output power, a 16.2 dBm output 1-dB compression point, a 10.8 dB conversion gain, and furthermore 8.6 % PAE.
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Chan, Yi-Chen, and 詹益鎮. "The Study and Implementation of Dual-Band (2.4 GHz, 5.2GHz) HBT Power Amplifier with Linearizer and Power-Detector Circuit by monolithic microwave integrated circuit (MMIC) technology." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/68120345413864348273.
Full textAbstract:
碩士元智大學
通訊工程學系
92
In this paper, we designed a power amplifier with Linearizer and power detector by monolithic microwave integrated circuit (MMIC) technology. The specifications of designed power amplifier are fulfilled the requirements of IEEE 802.11a, 11b, and 11g standard. The large signal model of GaAs HBT supplied by GCT is used to simulate and analyze the performance of designed PA circuit. We measured the power amplifier and power detector that manufactured by GCT foundry, and discussed the performance. The P-1dB of the power amplifier is 24.3dBm at 2.4GHz and 22.2dBm at 5.2GHz, gain is 21.3dB at 2.4GHz and 2.8dB at 5.2GHz. The voltage range of the power detector is 0.87~1.3V. The chip size of the circuit is 2×2 mm2.
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Cheng, Hsu-Chen, and 鄭旭辰. "The Designs for Monolithic Microwave Integrated Circuit Mixers." Thesis, 1996. http://ndltd.ncl.edu.tw/handle/55660815738106146382.
Full textAbstract:
碩士國立成功大學
電機工程研究所
84
In this thesis, the MMIC MESFET mixers are analyzed and designed by using a commercial microwave CAD tool. Various circuit configurations are studied and their performance comparisons then are given. Four types of single gate MMIC MESFET mixer for L-band ave been designed, simulated and compared. All of the designs use an active adder consisted of two common-gate MESFETs as their input stage and a source follower as their output stage for good RF/LO isolation and input/output impedance matching. By inserting an interstage match network between the mixer stage and the IF output buffer, a notable gain improvement and a certain degree of spurious rejection can be achived. Also the effect of an off-chip drain choke on the conversion has been examined. Simulation results include the mixer conversion gain, output P1dB and 2 tone IP3, LO/RF and LO/IF isolations, as well as the input return loss on RF, LO and IF ports. The designed chip sizes of the circuit layouts are about two millimeter square. These circuits can be used in the RF front-end of personal wireless communication systems.
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Tang, Kuo-Liang, and 湯國良. "The Designs for Monolithic Microwave Integrated Circuit Low noise Amplifiers." Thesis, 1996. http://ndltd.ncl.edu.tw/handle/68510085425153322728.
Full textAbstract:
碩士國立成功大學
電機工程研究所
84
Low noise amplifiers which operate between 1.8GHz - 2.0GHz frequency band have been designed for personal communication system application by using GaAs monolithic microwave integrated circuit (MMIC) technology.MIC LNA chip contains MESFET's as active elements and spiral inductors and capacitor as passive elements. To reduce the chip size, the spiral inductors also function as RF choke and the capacitors function as dc blocking elements. Several important factors, which mainly determine the circuit performances, were discussed in detail. They are (1) dc bias consideration, (2) amplifierstability, andching networks design and circuit optimizations. On the other hand, the gate width effect on noise performances was also illustrated. The selection of the FETwidth was baesd on the consideration of compromise between noise figure and current consumption. The two-stage LNA6A with 6*75um gate width MESFETs exhibits a 2.2 dB noise figure and 20.6 dB gain between 1.8-2.0 GHz. The negative feedback type two stage LNA6B shows a 2.56 dB noise figure and 20.9 dB gain over 1.8-2.1 GHz. The two-stage LNA6C, which first stage MESFET gate width is 6*75 um and the second stage MESFET gate width 6*50 um, exhibits the noise figure NF=2.2 dB and G=20 dB. The two stage amplifierLNA6D, in which both of MESFETs have gate width of 6*50 um, shows 2.62 dB noise figure and 21 dB gain in the same frequency band.
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ZHONG, BING-WEN, and 鍾炳文. "Millimeter-wave and microwave monolithic broadband traveling-wave amplifier integrated circuit." Thesis, 1988. http://ndltd.ncl.edu.tw/handle/53620021983205257272.
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Mittal, Manoj. "Internal node microwave monolithic integrated circuit diagnostics using scanning electrostatic force microscopy." 1995. http://hdl.handle.net/1993/18947.
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Chiu, Yuan-Ta, and 邱垣達. "Research on Low Power Low Phase Noise Differential and Quadrature Monolithic Microwave Integrated Circuit VCOs." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/23238628248667032106.
Full textAbstract:
碩士國立中央大學
電機工程研究所
99
In modern communication systems, voltage-controlled oscillator (VCO) is an in-dispensable building block. Since the demand for high data transmission rate is increas-ing, we were driven to investigate high-frequency communication systems. Therefore, how to design a high-frequency and low phase noise VCO is an important issue to be explored. In addition, since a quadrature VCO (QVCO) is commonly used in the di-rect-conversion transceivers we also discussed the measurement method of phase and amplitude error. Our researches were focused on using CMOS and GaAs PHEMT processes to de-sign and realize microwave and millimeter-wave VCOs and the circuit design was fo-cused on K-band low power and low phase noise differential and quadrature VCOs. There are four parts in the thesis. In the first part, the design parameters, oscillator the-ory, and the design of passive components in an LC-tank were introduced. In the second part, we proposed an innovative low power low phase noise differential VCO. In the third part, the pros and cons of using GaAs PHEMT process to design the Colpitts VCOs were investigated. In the last part, operation principles, application and topologies of QVCOs were introduced, an innovative QVCO was proposed, and the measurement method of phase and amplitude error was explained as well. Firstly, we used TSMC 90 nm CMOS process to realize a K-band VCO with transformer-feedback and current-reused techniques. The measured results showed that the oscillation frequency can be tuned from 21.3 to 30.3 GHz. The phase noise is -116.4 dBc/Hz at 1-MHz offset. The dc power consumption is 3 mW and the output power is -16 dBm. The chip size is only 0.36 mm2. The VCO demonstrated a Figure of Merit (FOM) of -198 dBc/Hz. This chip can also be laser-cut to modify its oscillation fre-quency. After being laser-cut, the oscillation frequency can be tuned from 25.1 to 23.6 GHz. The phase noise is -120 dBc/Hz at 1-MHz offset. The dc power consumption is 6.9 mW and the output power is -12 dBm. The laser-cut VCO demonstrated a FOM of -199.4 dBc/Hz. Secondly, we used WIN GaAs PHEMT process to design Colpitts VCOs including three circuits with different feedback topologies. These are the modified VCOs with transformer feedback, without transformer feedback, and with transformer and gate in-ductive feedback. The measured results showed that applying transformer-feedback technique to the Colpitts oscillator will cause counter effect. Therefore, the Colpitts os-cillator with gate inductive feedback only was recommended if large bandwidth is pre-ferred. Each of three chips occupies a chip size of 1 mm2. Compared to the CMOS pro-cess, the VCO using this process has larger output power and efficiency. Finally, we used TSMC 90 nm CMOS process to realize an innovative K-band QVCO. This circuit was based on the differential version of previously proposed CMOS VCO and adopted the bottom-series coupling topology. Therefore, ultra-low power consumption was achieved. The measured results showed that the oscillation frequency can be tuned from 20.6 to 21.2 GHz. The phase noise is -117.2 dBc/Hz at 1-MHz offset. The dc power consumption is 6.3 mW and the output power is -15 dBm. The minimum I/Q phase and amplitude error are 4° and 0.6 dB, respectively. The QVCO demonstrated a FOM of -195.6 dBc/Hz. The chip size is only 0.77 mm2.
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Chiou, Hwann-Kaeo, and 邱煥凱. "GaAs Microwave Monolithic Integrated Circuit Chip Set Design for 2.4-2.5GHz ISM Band Front End''." Thesis, 1997. http://ndltd.ncl.edu.tw/handle/74806085516275354399.
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ZHANG, GUO-BIN, and 張國彬. "Sensitivity analysis of through-short-delay standards and its extension to microwave and millimeter-wave monolithic integrated circuit de-embedding." Thesis, 1988. http://ndltd.ncl.edu.tw/handle/96906473683138213979.
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Correia, Ricardo João Luís Marques. "Passive backscatter wireless sensor with wireless power transmission for IoT applications." Doctoral thesis, 2019. http://hdl.handle.net/10773/29173.
Full textAbstract:
Nowadays, the Wireless Sensor Networks (WSNs) depend on the battery
duration of the sensors and there is a renewed interest in creating a passive
sensor network scheme in the area of Internet of Things (IoT) and space
oriented WSN systems. The challenges for the future of radio communications
have a twofold evolution, one being the low power consumption
and, another, the adaptability and intelligent use of the available resources.
Specially designed radios should be used to reduce power consumption, and
adapt to the environment in a smart and e cient way. This thesis will focus
on the development of passive sensors based on low power communication
(backscatter) with Wireless Power Transfer (WPT) capabilities used in IoT
applications. In that sense, several high order modulations for the communication
will be explored and proposed in order to increase the data rate.
Moreover, the sensors need to be small and cost e ective in order to be
embedded in other technologies or devices. Consequently, the RF front-end
of the sensors will be designed and implemented in Monolithic Microwave
Integrated Circuit (MMIC).Atualmente, as redes de sensores sem fios dependem da duração da bateria e,deste modo, existe um interesse renovado em criar um esquema de rede de sensores passivos na área de internet das coisas e sistemas de redes de sensores sem fios relacionados com o espaço. Os desafios do futuro das comunicações de rádio têm uma dupla evolução, sendo um o baixo consumo de energia e, outro, a adaptação e o uso inteligente dos recursos disponíveis. Rádios diferentes dos convencionais devem ser usados para reduzir o consumo de energia e devem adaptar-se ao ambiente de forma inteligente e eficiente, de modo a que este use a menor quantidade de energia possível para estabelecer a comunicação. Esta tese incide sobre o desenvolvimento de sensores passivos baseados em comunicação de baixo consumo energético (backscatter) com recurso a transmissão de energia sem fios de modo a que possam ser usados em diferentes aplicações inseridas na internet das coisas. Nesse sentido, várias modulações de alta ordem para a comunicação backscatter serão exploradas e propostas com o objectivo de aumentar a taxa de transmissão de dados. Além disso, os sensores precisam de ser reduzidos em tamanho e económicos de modo a serem incorporados em outras tecnologias ou dispositivos. Consequentemente, o front-end de rádio frequência dos sensores será projetado e implementado em circuito integrado de microondas monolítico.
Programa Doutoral em Engenharia Eletrotécnica