Journal articles: 'MMIC (Monolithic Microwave Integrated Circuit)'

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BAHL, INDER J. "MONOLITHIC MICROWAVE INTEGRATED CIRCUITS BASED ON GaAs MESFET TECHNOLOGY." International Journal of High Speed Electronics and Systems 06, no. 01 (March 1995): 91–124. http://dx.doi.org/10.1142/s0129156495000031.

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Advanced military microwave systems are demanding increased integration, reliability, radiation hardness, compact size and lower cost when produced in large volume, whereas the microwave commercial market, including wireless communications, mandates low cost circuits. Monolithic Microwave Integrated Circuit (MMIC) technology provides an economically viable approach to meeting these needs. In this paper the design considerations for several types of MMICs and their performance status are presented. Multi-function integrated circuits that advance the MMIC technology are described, including integrated microwave/digital functions and a highly integrated transceiver at C-band.

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Shin, Low Wen, and Arjuna Marzuki . "5GHz MMIC LNA Design Using Particle Swarm Optimization." Information Management and Business Review 5, no. 6 (June 30, 2013): 257–62. http://dx.doi.org/10.22610/imbr.v5i6.1050.

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This research presents an optimization study of a 5 GHz Monolithic Microwave Integrated Circuit (MMIC) design using Particle Swarm Optimization (PSO). MMIC Low Noise Amplifier (LNA) is a type of integrated circuit device used to capture signal operating in the microwave frequency. This project consists of two stages: implementation of PSO using MATLAB and simulation of MMIC design using Advanced Design System (ADS). PSO model that mimics the biological swarm behavior is developed to optimize the MMIC design variables in order to achieve the required circuit performance and specifications such as power gain, noise figure, drain current and circuit stability factor. Simulation results show that the proposed MMIC design fulfills the circuit stability factor and achieves a power gain of 19.73dB, a noise figure of 1.15 dB and a current of 0.0467A.

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Makri, R., M. Gargalakos, and N. K. Uzunoglu. "Design and Development of Monolithic Microwave Integrated Amplifiers and Coupling Circuits for Telecommunication Systems Applications." Active and Passive Electronic Components 25, no. 1 (2002): 1–22. http://dx.doi.org/10.1080/08827510211275.

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Recent advances in printed circuit and packaging technology of microwave and millimeter wave circuits result to the increasing use of MMICs in telecommunication systems. At Microwave and Fiber Optics Lab of NTUA several designs of various MMICs were conducted using the HP Eesof CAD Tool and FET and HEMT models of F20 and H40 GaAs foundry process of GEC Marconi. The designed MMICs are constructed in Europractice Organization while on-wafer probe measurements are performed in the Lab. In that framework, MMIC technologies are employed in the design of power and low noise amplifiers and couplers to be used for mobile and wireless communications as well as remote sensing and radar applications. A medium power linear FET amplifier has been designed with combining techniques on a single chip. The circuit operates at 14.4–15.2 GHz with an input power of−15dB m, a 36 dB total gain, while the input and output VSWR is less than 1.6. Due to high cost of MMIC fabrication only the first subunit was manufactured and tests verified the simulation results. Additionally, novel techniques have been used for the design of two coupling networks at 10 GHz in order to minimize the area occupied. A meander-kind design as well as shunt capacitors were implemented for a90°quadrature coupler and a Wilkinson one in order to reduce size. Finally, a two stages low noise amplifier was designed with the use of H40 GaAs process in order the differences between the relevant designs to be explored. The key specifications for this MMIC LNA include operation at 10 GHz with a total gain of 17 dB while the noise figure is less than 1.5 dB.

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Filippov, Ivan, Nikolay Duchenko, and Yuri Gimpilevich. "Particularities of complex-functional monolithic integrated circuits post-layout simulation." ITM Web of Conferences 30 (2019): 01003. http://dx.doi.org/10.1051/itmconf/20193001003.

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This paper presents a silicon-based complex-functional monolithic microwave integrated circuits (MMICs) design methodology. Post-layout simulation stage particularities are discussed. Pre-tapeout functionality verification results of the C-band phase and amplitude control MMIC based on 0.18 μm SiGe BiCMOS technology are also presented.

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Gaudreault, M., and M. G. Stubbs. "Lumped-element components for GaAs monolithic microwave integrated circuits." Canadian Journal of Physics 63, no. 6 (June 1, 1985): 736–39. http://dx.doi.org/10.1139/p85-117.

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Gallium-arsenide monolithic microwave integrated circuits (GaAs MMIC's) promise the microwave circuit designer significant size, weight, and reliability advantages. Distributed and lumped matching techniques have been utilized previously in MMIC design with the latter offering greater bandwidth and smaller size. In this paper, experimental results for lumped interdigitated capacitors on a gallium-arsenide substrate are presented. Computer modelling in the frequency range 2–18 GHz was used to derive a set of design curves for these capacitors. These curves cover aspect ratios of w/s = 1 and w/s = 2.5. Experimental results obtained by using these curves to design lumped-element monolithic filters show excellent agreement with theory.

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Powell, J. R., Colin Viegas, Hoshiar Singh Sanghera, P. G. Huggard, and Byron Alderman. "Comparing Novel MMIC and Hybrid Circuit High Efficiency GaAs Schottky Diode mm-Wave Frequency Doublers." Electronics 9, no. 10 (October 19, 2020): 1718. http://dx.doi.org/10.3390/electronics9101718.

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A novel Schottky diode frequency doubler in E-band, using biased series-connected diodes in the output waveguide, is reported. The doubler was implemented using a GaAs Schottky Monolithic Microwave Integrated Circuit (MMIC) process with integrated capacitors and beam leads. A comparison is made with a hybrid doubler using a more conventional single-ended configuration with two discrete diodes in a planar transmission line circuit. Both devices exhibit excellent performance over the 67–78 GHz design bandwidth, with the novel MMIC design producing 25 to 55 mW at 12 to 22% power conversion efficiency. Good agreement of measurements with simulations was also found.

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MARTINEZ, EDGAR J. "THE TRANSFORMING MMIC." International Journal of High Speed Electronics and Systems 13, no. 01 (March 2003): 59–64. http://dx.doi.org/10.1142/s0129156403001521.

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In this paper, we describe two new DARPA initiatives addressing new concepts in compound semiconductor materials and architectures that will radically transform monolithic microwave integrated circuits (MMICs) technology to address future requirements for military and commercial sensors and mobile communication networks.

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Darwish, Ali M., H. Alfred Hung, Edward Viveiros, and Amr A. Ibrahim. "Broadband AlGaN/GaN MMIC amplifier." International Journal of Microwave and Wireless Technologies 3, no. 4 (March 18, 2011): 399–404. http://dx.doi.org/10.1017/s1759078711000195.

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A broadband Monolithic Microwave Integrated Circuit (MMIC) amplifier, with 12 ± 2 dB gain across the 0.1–27 GHz band has been demonstrated using the AlGaN/GaN on SiC technology. The amplifier design employs a non-conventional, series-DC/RF-High Electron Mobility Transistor (HEMT) configuration. This configuration provides an alternative design to the conventional traveling-wave amplifier (TWA). It results in a smaller MMIC chip size, and extends amplifier gain to the low-frequency region. The amplifier MMIC utilizes four HEMT devices in series and could be biased at voltages up to 120 V.

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Metel, A. A., T. N. Fail, Y. A. Novichkova, I. M. Dobush, A. Е. Goryainov, and A. A. Kalentyev. "Automated design of a linear microwave monolithic distributed amplifier." Issues of radio electronics, no. 3 (June 25, 2021): 40–48. http://dx.doi.org/10.21778/2218-5453-2021-3-40-48.

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Microwave integrated circuit (IC) design tends to become more efficient and less expensive which leads to emerging the circuit topology and layout synthesis software. In the paper we present a technique and an algorithm for microwave distributed amplifier (DA) automated synthesis based on requirements to linear characteristics. The technique feature is the using of active and passive element’s models for a chosen IC process. This allow the technique to generate circuit topology which can be manufactured using a given IC process. The proposed DA automated design technique work was demonstrated with preamplifier stage design for 20–30 GHz buffer amplifier MMIC based on the 0.25um GaAs pHEMT process of Svetlana-Rost foundry in Saint-Petersburg.

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Platt, Duncan, Lars Pettersson, Darius Jakonis, Michael Salter, and Joacim Haglund. "Integrated 79 GHz UWB automotive radar front-end based on Hi-Mission MCM-D silicon platform." International Journal of Microwave and Wireless Technologies 2, no. 3-4 (July 7, 2010): 325–32. http://dx.doi.org/10.1017/s1759078710000462.

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A highly integrated silicon platform (Hi-Mission) for high frequency applications is introduced. This platform utilizes heterogeneous Multi-Chip Module-Deposited (MCM-D) technology with integrated passive devices together with silicon and GaAs Monolithic Microwave Integrated Circuit (MMIC) technology developed for the automotive Ultra Wide Band (UWB) radar (short-range radar) frequency band from 77 to 81 GHz. Developments are described in the area of MCM-D process development, MMIC, integrated phased array antenna, module design, and assembly process development. The demonstrator is composed of two test vehicles designed for conducted and radiated measurements, respectively. Test results are presented at the component and module level.

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Shiryaev, Boris, Aleksey Bezruk, Dmitry Argunov, and Aleksey Yushchenko. "Algorithm for automated visual inspection of MMIC using a classifier based on neural networks." ITM Web of Conferences 30 (2019): 04012. http://dx.doi.org/10.1051/itmconf/20193004012.

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We present the algorithm for automated visual inspection of microwave monolithic integrated circuits (MMIC) using computer vision and artificial neural networks. The artificial neural network classifies each pixel of a microphotograph to a certain photomask area. The algorithm detects defectiveness of an MMIC according to classification result and photomask comparison.

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Mertin, Wolfgang, Klaus Dieter Herrmann, and Erich Kubalek. "Electron beam testability of monolithic microwave integrated circuits (MMIC)." Microelectronic Engineering 12, no. 1-4 (May 1990): 287–93. http://dx.doi.org/10.1016/0167-9317(90)90043-s.

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Pavlidis, D., and M. Tutt. "A novel course on microwave monolithic integrated circuit (MMIC) theory and characterization." IEEE Transactions on Education 32, no. 2 (May 1989): 73–84. http://dx.doi.org/10.1109/13.28036.

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Sieth, Matthew, Sarah Church, Judy M. Lau, Patricia Voll, Todd Gaier, Pekka Kangaslahti, Lorene Samoska, et al. "Technology developments for a large-format heterodyne MMIC array at W-band." International Journal of Microwave and Wireless Technologies 4, no. 3 (April 12, 2012): 299–307. http://dx.doi.org/10.1017/s1759078712000293.

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We report on the development of W-band (75–110 GHz) heterodyne receiver technology for large-format astronomical arrays. The receiver system is designed to be both mass producible, so that the designs could be scaled to thousands of receiver elements, and modular. Most of the receiver functionality is integrated into compact monolithic microwave integrated circuit (MMIC) amplifier-based multichip modules. The MMIC modules include a chain of InP MMIC low-noise amplifiers, coupled-line bandpass filters, and sub-harmonic Schottky diode mixers. The receiver signals will be routed to and from the MMIC modules on a multilayer high-frequency laminate, which includes splitters, amplifiers, and frequency triplers. A prototype MMIC module has exhibited a band-averaged noise temperature of 41 K from 82 to 100 GHz and a gain of 29 dB at 15 K, which is the state-of-the-art for heterodyne multichip modules.

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Ayllon, Natanael, Juan-Mari Collantes, Aitziber Anakabe, Geoffroy Soubercaze-Pun, Stephane Forestier, and Dominique Langrez. "Joint RF and large-signal stability optimization of MMIC power combining amplifiers." International Journal of Microwave and Wireless Technologies 5, no. 6 (August 8, 2013): 683–88. http://dx.doi.org/10.1017/s1759078713000767.

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In this paper, authors report on an enhanced approach for the design of monolithic microwave integrated circuit (MMIC) power combining amplifiers. Commonly used techniques for the stabilization of such circuits are empirical and too conservative. This leads very often to a non-desired degradation of the radio frequency (RF) performances that are inherent to the physical properties of such stabilization networks at the fundamental frequency of operation. The methodology proposed here is based on the use of large-signal optimization processes that combine RF and stability analyses from the early stages of the design. This approach results in an improvement of the RF performances while sufficient stability margins are preserved. The optimization procedure is explained on a Ku-band MMIC power amplifier for space-borne communications.

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Moronval, Xavier, Reza Abdoelgafoer, and Adeline Déchansiaud. "MMIC-based asymmetric Doherty power amplifier for small cells applications." International Journal of Microwave and Wireless Technologies 7, no. 5 (June 3, 2014): 499–505. http://dx.doi.org/10.1017/s1759078714000737.

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We present the results obtained on a multi-mode multi-band 20 W Monolithic Microwave Integrated Circuit (MMIC) power amplifier. The proposed two-stage circuit is based on the silicon Laterally Diffused Metal Oxide Semiconductor (LDMOS) technology. Thanks to dedicated design techniques, it can cover the Digital Cellular Service (DCS), Personal Communications Service (PCS), and UMTS bands (ranging from 1.805 to 2.17 GHz) and deliver more than 20 W of output power, 30 dB of gain and 50% of power added efficiency. When combined in a Doherty configuration with an incremental 40 W MMIC in a dual-path package, the resulted asymmetric MMIC (an industry first) can deliver an unprecedented LDMOS MMIC efficiency of up to 44% at 8 dB back-off in the UMTS band. Then, the DPA has been optimized in conjunction with a novel RF pre-distortion technique, leading to 33–80% energy saving at the system level.

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Roy, Langis, Malcolm G. Stubbs, and James S. Wight. "A GaAs monolithic amplifier with extremely low power consumption." Canadian Journal of Physics 69, no. 3-4 (March 1, 1991): 177–79. http://dx.doi.org/10.1139/p91-028.

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The design and performance of a high-gain, monolithic, broadband amplifier with extremely low power consumption are described. The amplifier, fabricated using a 0.5 μm GaAs depletion-mode MESFET (metal semiconductor field effect transistor) process, utilizes very small gate width devices to achieve a measured gain of 19 dB and a 0.1 to 2.1 GHz bandwidth with only 63 mW dc power dissipation. This is the lowest power consumption broadband MMIC (monolithic microwave integrated circuit) reported to date and is intended for mobile radio applications.

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Ерофеев, Е. В., Д. А. Шишкин, В. В. Курикалов, А. В. Когай, and И. В. Федин. "РАЗРАБОТКА СВЧ МОНОЛИТНЫХ ИНТЕГРАЛЬНЫХ СХЕМ МИЛЛИМЕТРОВОГО ДИАПАЗОНА НА ОСНОВЕ GAAS ДЛЯ ПРИМЕНЕНИЯ В СОВРЕМЕННЫХ ИНФОРМАЦИОННОКОММУНИКАЦИОННЫХ СИСТЕМАХ НОВОГО ПОКОЛЕНИЯ (5G)." NANOINDUSTRY Russia 96, no. 3s (June 15, 2020): 321–24. http://dx.doi.org/10.22184/1993-8578.2020.13.3s.321.324.

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В данной работе представлены результаты разработки СВЧ монолитной интегральной схемы шестиразрядного фазовращателя и усилителя мощности диапазона частот 26-30 ГГц. СКО ошибки по фазе и амплитуде фазовращателя составили 1,2 град. и 0,13 дБ соответственно. Максимальная выходная мощность и КПД по добавленной мощности усилителя в точке сжатия Ку на 1 дБ составили 30 дБм и 20 % соответственно. This paper describes the design, layout, and performance of 6-bit phase shifter and power amplifier monolithic microwave integrated circuit (MMIC), 26-30 GHz band. Phase shifter MMIC has RMS phase error of 1.2 deg. And RMD amplitude error is 0.13 dB. MMIC power amplifier has output power capability of 30 dBm at 1 dB gain compression (P-1dB) and PAE of 20 %.

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Kühn, Jutta, Markus Musser, Friedbert van Raay, Rudolf Kiefer, Matthias Seelmann-Eggebert, Michael Mikulla, Rüdiger Quay, Thomas Rödle, and Oliver Ambacher. "Design and realization of GaN RF-devices and circuits from 1 to 30 GHz." International Journal of Microwave and Wireless Technologies 2, no. 1 (February 2010): 115–20. http://dx.doi.org/10.1017/s175907871000019x.

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The design, realization, and characterization of highly efficient powerbars and monolithic microwave integrated circuit (MMIC) high-power amplifiers (HPAs) with AlGaN/GaN high electronic mobility transistors (HEMTs) are presented for the frequency range between 1 and 30 GHz. Packaged powerbars for the frequency range between 1 and 6 GHz have been developed based on a process called GaN50 with a gate length of 0.5 μm. Based on a GaN25 process with a gate length of 0.25 μm, high-power MMIC amplifiers are presented starting from 6 GHz up to advanced X-band amplifiers and robust LNAs in microstrip transmission line technology.

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Lonac, Julio A., Ilan Melczarsky, and Rudi P. Paganelli. "Simple method for characterizing linear multi-port microstrip structures." International Journal of Microwave and Wireless Technologies 3, no. 3 (April 19, 2011): 281–88. http://dx.doi.org/10.1017/s1759078711000481.

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A simple method for the full characterization of passive n-port microwave monolithic integrated circuit (MMIC) structures using standard two-port vector network analyzer (VNA) measurements is presented. Its main advantages are: it does not require to perform measurements from all the ports of the network, no special calibration procedure is needed, the auxiliary terminations required by the procedure can be integrated at the border of the structure under test with minimal area increase, and it can be easily implemented in commercial CAD software. The method was applied to a nine-port microstrip structure corresponding to the output power combiner and impedance matching network of an X-band MMIC high power amplifier (HPA). The full S-parameter matrix was derived from two-port measurements and compared to the circuit–as well as electromagnetic (EM)-based simulations of the structure.

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Keimasi, Mohammadreza, Sanka Ganesan, and Michael Pecht. "Low temperature electrical measurements of silicon bipolar monolithic microwave integrated circuit (MMIC) amplifiers." Microelectronics Reliability 46, no. 2-4 (February 2006): 326–34. http://dx.doi.org/10.1016/j.microrel.2005.07.002.

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Qi, Luwei, Jin Meng, Xiaoyu Liu, Chengyue Yang, Jingtao Zhou, Dehai Zhang, and Zhi Jin. "Design of a Schottky Metal-Brim Structure to Optimize 180–220 GHz Broadband Frequency Doubler MMIC." Electronics 9, no. 5 (April 26, 2020): 715. http://dx.doi.org/10.3390/electronics9050715.

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The present work proposes a 180–225 GHz broadband frequency doubler monolithic microwave integrated circuit (MMIC) based on a novel Schottky barrier diode (SBD) terminal structure denoted as a Schottky metal-brim (SMB). Compared with an MMIC adopting the conventional SBD terminal structure, preliminary measurements show that the maximum output power of the MMIC adopting the SMB structure increases from 0.216 mW at 206 GHz to 0.914 mW at 208 GHz. Analysis of the nonlinear current–voltage and capacitance–voltage characteristics of the two terminal structures based on an extended one-dimensional drift-diffusion model, indicates that the SMB structure provides significantly better conversion efficiency than the conventional SBD structure by eliminating the accumulation of charge and additional current paths near the Schottky electrode edge. It provides a feasible scheme for the optimization of MMIC applications requiring high power and high efficiency.

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Schmid, Ulf, Rolf Reber, Sébastien Chartier, Kristina Widmer, Martin Oppermann, Wolfgang Heinrich, Chafik Meliani, Rüdiger Quay, and Stephan Maroldt. "GaN devices for communication applications: evolution of amplifier architectures." International Journal of Microwave and Wireless Technologies 2, no. 1 (February 2010): 85–93. http://dx.doi.org/10.1017/s1759078710000218.

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This paper presents the design and implementation of power amplifiers using high-power gallium nitride (GaN) high electronic mobility transistor (HEMT) powerbars and monolithic microwave integrated circuits (MMICs). The first amplifier is a class AB implementation for worldwide interoperability for microwave access (WiMAX) applications with emphasis on a low temperature cofired ceramics (LTCC) packaging solution. The second amplifier is a class S power amplifier using a high power GaN HEMT MMIC. For a 450 MHz continuous wave (CW) signal, the measured output power is 5.8 W and drain efficiency is 18.5%. Based on time domain simulations, loss mechanisms are identified and optimization steps are discussed.

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van Heijningen, Marc, Jeroen A. Hoogland, Peter de Hek, and Frank E. van Vliet. "6–12 GHz double-balanced image-reject mixer MMIC in 0.25 µm AlGaN/GaN technology." International Journal of Microwave and Wireless Technologies 7, no. 3-4 (March 30, 2015): 307–15. http://dx.doi.org/10.1017/s1759078715000471.

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The front-end circuitry of transceiver modules is slowly being updated from GaAs-based monolithic microwave integrated circuits (MMICs) to Gallium-Nitride (GaN). Especially GaN power amplifiers and T/R switches, but also low-noise amplifiers (LNAs), offer significant performance improvement over GaAs components. Therefore it is interesting to also explore the possible advantages of a GaN mixer to enable a fully GaN-based front-end. In this paper, the design-experiment and measurement results of a double-balanced image-reject mixer MMIC in 0.25 μm AlGaN/GaN technology are presented. First an introduction is given on the selection and dimensioning of the mixer core, in relation to the linearity and conversion loss. At the intermediate frequency (IF)-side of the mixer, an active balun has been used to compensate partly for the loss of the mixer. An on-chip local-oscillator (LO) signal amplifier has been incorporated so that the mixer can function with 0 dBm LO input power. After the discussion of the circuit design the measurement results are presented. The performance of the mixer core and passive elements has been demonstrated by measurements on a test-structure. The mixer MMIC measured conversion loss is <8 dB from 6 to 12 GHz, at 1 GHz IF and 0 dBm LO power. The measured image rejection is better than 30 dB.

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Guan, Jin, Min Gong, Bo Gao, Yuxi Lu, and Yu Lu. "Design of K-band modified hairpin filter with harmonic suppression using GaAs MMIC process." Circuit World 45, no. 4 (November 4, 2019): 287–91. http://dx.doi.org/10.1108/cw-01-2019-0006.

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Purpose The purpose of this paper is to present a K-band modified hairpin bandpass filter on a planar circuit with harmonic suppression and compact size. Design/methodology/approach The inter-connect transmission lines of conventional hairpin filter are replayed by T-shaped open stub to achieve transmission zero for second harmonic. This filter is simulated and optimized by using electromagnetic simulation software and tested on-chip. Findings This proposed filter shows the return loss of better than −10dB, the insertion loss of better than 2 dB in pass-band and suppression of more than 40 dB at second harmonic. Originality/value The proposed filter can be designed on monolithic microwave integrated circuit, PCB or LTCC and it is useable for microwave and microwave and millimeter-wave systems.

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Bian, Yue, Yifan Gu, Xu Ding, Zhiyu Wang, Jiongjiong Mo, and Faxin Yu. "MMIC on-Wafer Test Method Based on Hybrid Balanced and Unbalanced RF Pad Structures." Electronics 7, no. 9 (September 19, 2018): 208. http://dx.doi.org/10.3390/electronics7090208.

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Nowadays, more and more MMICs (Microwave Monolithic Integrated Circuit), such as limiters and switches, are designed to have balanced and unbalanced test pad structures to solve the challenging size restrictions and integration requirements for MMICs. Hybrid balanced and unbalanced RF (Radio Frequency) probes are adopted for an on-wafer test of the heteromorphy structures. The thru standard based on single balanced or unbalanced structures cannot meet the impedance matching requirements of the hybrid RF probes at the same time, which leads to a dramatic decreasing of the calibration accuracy and cannot satisfy the requirement of MMIC test. Therefore, in this paper, the calibration error estimating of hybrid RF probes based on traditional SOLR (Short Open Load Reciprocal) calibration method is performed, and an on-wafer test approach of MMIC based on hybrid balanced and unbalanced RF probes is proposed which combines the OSL (Open Short Load) second-order de-embedding technique with vector error correction and the matrix transformation technique. The calibration reference plane can be accurately shifted to the probe tip with this method, which greatly improves the test accuracy, and an automatic test system is built for this method based on the object-oriented C# language.

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Sriram, S., A. Ward, J. Henning, and S. T. Allen. "SiC MESFETs for High-Frequency Applications." MRS Bulletin 30, no. 4 (April 2005): 308–11. http://dx.doi.org/10.1557/mrs2005.79.

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AbstractSignificant progress has been made in the development of SiC metal semiconductor field-effect transistors (MESFETs) and monolithic microwave integrated-circuit (MMIC) power amplifiers for high-frequency power applications. Three-inch-diameter high-purity semi-insulating 4H-SiC substrates have been used in this development, enabling high-volume fabrication with improved performance by minimizing surface- and substrate-related trapping issues previously observed in MESFETs. These devices exhibit excellent reliability characteristics, with mean time to failure in excess of 500 h at a junction temperature of 410°C. A sampling of these devices has also been running for over 5000 h in an rf high-temperature operating-life test, with negligible changes in performance. High-power SiC MMIC amplifiers have also been demonstrated with excellent yield and repeatability. These MMIC amplifiers show power performance characteristics not previously available with conventional GaAs technology. These developments have led to the commercial availability of SiC rf power MESFETs and to the release of a foundry process for MMIC fabrication.

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Putri, Rizqi Eka, Emerson Pascawira Sinulingga, and Suherman Suherman. "3D Modeling Parallel Coupled-Line Bandpass Filter Based on Coplanar Waveguide MMIC Multilayer Technology." TELKA - Telekomunikasi, Elektronika, Komputasi dan Kontrol 5, no. 1 (May 21, 2019): 24–30. http://dx.doi.org/10.15575/telka.v5n1.24-30.

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Electromagnetic modeling technique on monolithic microwave integrated circuit (MMIC) coplanar waveguide (CPW) multilayer have been developed to accurately model the Parallel Coupled-Line Bandpass Filter. The 3D modeling technique shows the simulation results that are optimum. Several simulation steps have been demonstrated and compared on the design of Parallel Coupled-Line Bandpass Filters. Based on the 3D modeling, S11-Return Loss and S21-Insertion Loss of -22.6 dB and and 2.94 dB are obtained respectively. In addition, it is shown the best frequency response from the design of the Parallel Coupled-Line Bandpass Filter.

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Oppermann, Martin, and Ralf Rieger. "RF Modules (Tx–Rx) with Multifunctional MMICs." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2017, NOR (July 1, 2017): 1–5. http://dx.doi.org/10.4071/2017-nor-oppermann.

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Abstract Next generation RF sensor modules for multifunction active electronically steered antenna (AESA) systems will need a combination of different operating modes, such as radar, electronic warfare (EW) functionalities and communications/datalinks within the same antenna frontend. They typically operate in C-Band, X-Band and Ku-Band and imply a bandwidth requirement of more than 10 GHz. For the realisation of modern active electronically steered antennas, the transmit/receive (T/R) modules have to match strict geometry demands. A major challenge for these future multifunction RF sensor modules is dictated by the half-wavelength antenna grid spacing, that limits the physical channel width to < 12 mm or even less, depending on the highest frequency of operation with accordant beam pointing requirements. A promising solution to overcome these geometry demands is the reduction of the total monolithic microwave integrated circuit (MMIC) chip area, achieved by integrating individual RF functionalities, which are commonly achieved through individual integrated circuits (ICs), into new multifunctional (MFC) MMICs. Various concepts, some of them already implemented, towards next generation RF sensor modules will be discussed and explained in this work.

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Déchansiaud, A., R. Sommet, T. Reveyrand, D. Bouw, C. Chang, M. Camiade, F. Deborgies, and R. Quéré. "Design, modeling and characterization of MMIC integrated cascode cell for compact Ku-band power amplifiers." International Journal of Microwave and Wireless Technologies 5, no. 3 (May 24, 2013): 261–69. http://dx.doi.org/10.1017/s1759078713000482.

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This paper reports on the design of a new power cell dedicated to Ku-band power amplifier (PA) applications. This cell called “integrated cascode” has been designed in order to propose a strong decrease in terms of circuit size for PA. The technology used relies on 0.25-μm GaAs pseudomorphic high electron mobility transistors (PHEMT) of United Monolithic Semiconductors (UMS) foundry. A distributed approach is proposed in order to model this power cell. The challenge consists of obtaining, with a better shape factor (ratio between the vertical and horizontal sizes of the transistor), the same performances than a single transistor with the same gate width. In order to design a 2W amplifier, we have used two 12 × 100 μm transistors. Cascode vertical size is 413 μm whereas a transistor with the same gate width exhibits a vertical size of 790 μm. Therefore, the shape factor is nearly one as compared to a shape factor of 4 for a classical parallel architecture. This new device allows us to decrease the Monolithic microwave integrated circuit amplifier area of 40% compared to amplifier based on single transistors.

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Sajedin, Maryam, Issa Elfergani, Jonathan Rodriguez, Raed Abd-Alhameed, Monica Fernandez-Barciela, and Manuel Violas. "Ultra-Compact mm-Wave Monolithic IC Doherty Power Amplifier for Mobile Handsets." Electronics 10, no. 17 (September 2, 2021): 2131. http://dx.doi.org/10.3390/electronics10172131.

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This work develops a novel dynamic load modulation Power Amplifier (PA) circuity that can provide an optimum compromise between linearity and efficiency while covering multiple cellular frequency bands. Exploiting monolithic microwave integrated circuits (MMIC) technology, a fully integrated 1W Doherty PA architecture is proposed based on 0.1 μm AlGaAs/InGaAs Depletion-Mode (D-Mode) technology provided by the WIN Semiconductors foundry. The proposed wideband DPA incorporates the harmonic tuning Class-J mode of operation, which aims to engineer the voltage waveform via second harmonic capacitive load termination. Moreover, the applied post-matching technique not only reduces the impedance transformation ratio of the conventional DPA, but also restores its proper load modulation. The simulation results indicate that the monolithic drive load modulation PA at 4 V operation voltage delivers 44% PAE at the maximum output power of 30 dBm at the 1 dB compression point, and 34% power-added efficiency (PAE) at 6 dB power back-off (PBO). A power gain flatness of around 14 ± 0.5 dB was achieved over the frequency band of 23 GHz to 27 GHz. The compact MMIC load modulation technique developed for the 5G mobile handset occupies the die area of 3.2 mm2.

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SCHLECHTWEG, M. "HIGH FREQUENCY CIRCUITS BASED ON GaAs PHEMT TECHNOLOGY FOR MODERN SENSOR AND COMMUNICATION SYSTEMS." International Journal of High Speed Electronics and Systems 10, no. 01 (March 2000): 393–411. http://dx.doi.org/10.1142/s0129156400000404.

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For sensor and communication system applications, monolithic microwave integrated circuits (MMICs) feature performance, functionality, reliability, and competitive price. In this paper, the potential of PHEMT ICs for communication and sensor applications up to 100 GHz is discussed. Specifically, I will address the application of coplanar waveguide technology for rf ICs, millimeter-wave multifunctional ICs and power amplifiers, as well as mixed-signal ICs and OEICs. A 77-GHz transceiver MMIC designed for automotive collision avoidance radar is presented as an example of a very compact, multifunctional mm-wave chip. A chip set for active and passive imaging at 94 GHz includes low noise and high gain amplifiers, low phase noise oscillators, and phase shifters. An FMCW module is conceived for material characterization. A family of coplanar power amplifier MMICs for wireless communication in the range of 20 to 60 GHz with output powers up to 1 W is presented. Finally, integrated circuits for high-speed data transmission at 40 Gbit/s will be discussed.

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Alleva, Vincenzo, Andrea Bettidi, Walter Ciccognani, Marco De Dominicis, Mauro Ferrari, Claudio Lanzieri, Ernesto Limiti, and Marco Peroni. "High-power monolithic AlGaN/GaN high electron mobility transistor switches." International Journal of Microwave and Wireless Technologies 1, no. 4 (June 19, 2009): 339–45. http://dx.doi.org/10.1017/s1759078709990183.

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This work presents the design, fabrication, and test of X-band and 2–18 GHz wideband high-power single pole double throw (SPDT) monolithic microwave integrated circuit (MMIC) switches in microstrip gallium nitride (GaN) technology. Such switches have demonstrated state-of-the-art performances and RF fabrication yields better than 65%. In particular, the X-band switch exhibits 1 dB insertion loss, better than 37 dB isolation, and a power handling capability better than 39 dBm at a 1 dB insertion loss compression point; the wideband switch shows an insertion loss lower than 2.2 dB, better than 25 dB isolation, and an insertion loss compression of 1 dB at an input drive higher than 38.5 dBm in the entire bandwidth.

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Es-saqy, Abdelhafid, Maryam Abata, Mahmoud Mehdi, Mohammed Fattah, Said Mazer, Moulhime El Bekkali, and Catherine Algani. "A 5G mm-wave compact voltage-controlled oscillator in 0.25 µm pHEMT technology." International Journal of Electrical and Computer Engineering (IJECE) 11, no. 2 (April 1, 2021): 1036. http://dx.doi.org/10.11591/ijece.v11i2.pp1036-1042.

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A 5G mm-wave monolithic microwave integrated circuit (MMIC) voltage-controlled oscillator (VCO) is presented in this paper. It is designed on GaAs substrate and with 0.25 µm-pHEMT technology from UMS foundry and it is based on pHEMT varactors in order to achieve a very small chip size. A 0dBm-output power over the entire tuning range from 27.67 GHz to 28.91 GHz, a phase noise of -96.274 dBc/Hz and -116.24 dBc/Hz at 1 and 10 MHz offset frequency from the carrier respectively are obtained on simulation. A power consumption of 111 mW is obtained for a chip size of 0.268 mm2. According to our knowledge, this circuit occupies the smallest surface area compared to pHEMTs oscillators published in the literature.

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Singh, S., S. C. Bera, and D. Pujara. "Compact and Low Loss Microwave Idlers for Low Frequency Integrated Circuits." Advanced Electromagnetics 8, no. 3 (June 10, 2019): 23–28. http://dx.doi.org/10.7716/aem.v8i3.1040.

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Two design methodologies for realization of low frequency (less than 20 GHz) compact and low loss microwave idlers have been proposed in this paper. Such idlers can be used for realizing low frequency higher order (6X or more) harmonic mixers or multipliers on monolithic integrated technology. Low frequency higher order harmonic mixers or multipliers are generally avoided due to higher losses and board space consumed by multiple idlers. The present proposed methods of idler design are based on realization of idlers by combining distributed microstrip transmission line and lumped components. The approach helps in transmitting the desired frequency with lower insertion loss and providing more rejection to the undesired frequencies. The design proposal has been demonstrated by designing an idler for 3 GHz LO side of a 6X harmonic MMIC mixer. This mixer utilizes 6th harmonic of the 3 GHz LO for generating 18 GHz output RF signal by frequency mixing. The idler for 3 GHz LO rejects dc, IF and selective even harmonics of LO; 6 GHz, 12 GHz and 18 GHz. On wafer test results of the developed 6X harmonic MMIC mixer has substantiated the idler design.

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Mittereder, Jeffrey A. "Backside Etching of GaAs Devices." Microscopy Today 5, no. 2 (March 1997): 18–19. http://dx.doi.org/10.1017/s1551929500060090.

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The following is a technique for analyzing the area underneath a GaAs integrated circuit or discrete device which may aid in failure analysis. This procedure has been used in the past by the microelectronics community, and it is reviewed here for GaAs monolithic microwave integrated circuits (MMICs) and discrete devices. Because it is a destructive method, we use it in our lab after all other testing is completed. The substrate thickness of the GaAs is ∼4 mils (25 μm).

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Voll, Patricia, Lorene Samoska, Sarah Church, Judy M. Lau, Matthew Sieth, Todd Gaier, Pekka Kangaslahti, Mary Soria, Sami Tantawi, and Dan Van Winkle. "A G-band cryogenic MMIC heterodyne receiver module for astronomical applications." International Journal of Microwave and Wireless Technologies 4, no. 3 (March 12, 2012): 283–89. http://dx.doi.org/10.1017/s1759078712000189.

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We report cryogenic noise temperature and gain measurements of a prototype heterodyne receiver module designed to operate in the atmospheric window centered on 150 GHz. The module utilizes monolithic microwave integrated circuit (MMIC) InP high electron mobility transistor (HEMT) amplifiers, a second harmonic mixer, and bandpass filters. Swept local oscillator (LO) measurements show an average gain of 22 dB and an average noise temperature of 87 K over a 40 GHz band from 140 to 180 GHz when the module is cooled to 22 K. A spot noise temperature of 58 K was measured at 166 GHz and is a record for cryogenic noise from HEMT amplifiers at this frequency. Intermediate frequency (IF) sweep measurements show a 20 GHz IF band with less than 94 K receiver noise temperature for a fixed LO of 83 GHz. The compact housing features a split-block design that facilitates quick assembly and a condensed arrangement of the MMIC components and bias circuitry. DC feedthroughs and nano-miniature connectors also contribute to the compact design, so that the dimensions of the moduleare approximately 2.5 cm per side.

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Elkhaldi, Said, Naima Amar Touhami, Mohamed Aghoutane, and Taj-Eddin Elhamadi. "LINC Method for MMIC Power Amplifier Linearization." Recent Advances in Electrical & Electronic Engineering (Formerly Recent Patents on Electrical & Electronic Engineering) 12, no. 5 (October 28, 2019): 402–7. http://dx.doi.org/10.2174/2352096511666180611101146.

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Background: This article proposes the design and implementation of a MMIC (monolithic microwave integrated circuits) Power amplifier using the ED02AH process. Methods: The MMIC ED02AH technology have been developed specifically for microwave applications up to millimeter waves, and for high-speed digital circuits. The use of a single branch of a power amplifier can produce high distortion. In the present paper, the Linear amplification with nonlinear components (LINC) method is introduced and applied as a solution to linearize the power amplifier, it can simultaneously provide high efficiency and high linearity. To validate the proposed approach, the design and characterization of a 5.25 GHz LINC Power Amplifier on MMIC technology is presented. Results: Good results have been achieved, and an improvement of about 37.50 dBc and 59 dBc respectively is obtained for the Δlower C/I and Δupper C/I at 5.25 GHz. Conclusion: As a result of this method, we can reduce the Carrier Power to Third-Order Intermodulation Distortion Power Ratio. Excellent linearization is obtained almost 37.6 dBc for Δlower C/I and 58.8 dBc for Δupper C/I.

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Es-saqy, Abdelhafid, Maryam Abata, Mahmoud Mehdi, Said Mazer, Mohammed Fattah, Moulhime El Bekkali, and Catherine Algani. "28 GHz balanced pHEMT VCO with low phase noise and high output power performance for 5G mm-Wave systems." International Journal of Electrical and Computer Engineering (IJECE) 10, no. 5 (October 1, 2020): 4623. http://dx.doi.org/10.11591/ijece.v10i5.pp4623-4630.

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This paper presents the study and design of a balanced voltage controlled oscillator VCO for 5G wireless communication systems. This circuit is designed in monolithic microwave integrated circuit (MMIC) technology using PH15 process from UMS foundry. The VCO ensures an adequate tuning range by a single-ended pHEMT varactors configuration. The simulation results show that this circuit delivers a sinusoidal signal of output power around 9 dBm with a second harmonic rejection between 25.87 and 33.83 dB, the oscillation frequency varies between 26.46 and 28.90 GHz, the phase noise is -113.155 and -133.167 dBc/Hz respectively at 1 MHz and 10 MHz offset and the Figure of Merit is -181.06 dBc/Hz. The power consumed by the VCO is 122 mW. The oscillator layout with bias and RF output pads occupies an area of 0.515 mm2.

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AL SALAMEH, M. S., and OSAMA O. FARIS. "Simple and efficient analysis of monolithic microwave integrated circuit (MMIC) interconnects by the method of moments." International Journal of Electronics 86, no. 7 (July 1999): 907–18. http://dx.doi.org/10.1080/002072199133111.

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Tang, Jiajie, and Le Luo. "Wafer Level Integration of MMIC and Microwave IPD with Metal/BCB Multilayer Interconnection Based on Low Resistance Silicon." International Symposium on Microelectronics 2011, no. 1 (January 1, 2011): 001067–73. http://dx.doi.org/10.4071/isom-2011-tha6-paper1.

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A new high-density wafer-level integration of a GaAs based monolithic microwave integrated circuit (MMIC) chip and a microwave integrated passive device (IPD) is presented. This integration technology, an important and IC-compatible option for system-in-package (SiP), utilizes bulk Si fabrication and film deposition based multichip module (MCM-D) process. MMIC is entirely embedded into the silicon wafer while IPDs are integrated on the dielectric layers simultaneously with the metal/BCB multilayer interconnection. Key fabrication processes and crucial technologies are described in detail. Normal silicon wafer is selected as substrate because of its mature processing technology, low cost, good thermal dissipation as well as its thermal expansion matching with GaAs. To obtain excellent microwave performances and good planarization, thick photosensitive BCB of 25um/layer is adopted as dielectric and thus the use of tapered via that is hollow inside or filled by BCB is a cost-effective way to accomplish inter-layer connection instead of Au bump bonding or column used in dry-etch BCB process. Further promotions on microwave performances are achieved by the shielding effect through ground layer coverage on silicon surface and the application of microstrip lines. Several experiment results such as dc inter-layer connection resistance and thermal resistance measurements are complemented to investigate the characteristic of the whole package. The Microwave properties of the integration sample are measured by transmission performance test from 15GHz to 30GHz. The measurement results are analyzed and discussed comparing with the theoretical or simulation results.

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Forstner, Hans Peter, Markus Ortner, Ludger Verweyen, and Herbert Knapp. "A homodyne transceiver MMIC using SiGe:C technology for 60 GHz wireless applications." International Journal of Microwave and Wireless Technologies 3, no. 2 (April 2011): 147–55. http://dx.doi.org/10.1017/s1759078711000390.

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A highly integrated transceiver microwave monolithic integrated circuit (MMIC) manufactured in a 200-GHz SiGe:C production technology is presented, applicable for sensing- and broadband communication applications. To simplify the analog frontend, the fully differential design is based on a homodyne architecture. It comprises an LO signal generation unit based on a wideband 60 GHz fundamental Voltage Controlled Oscillator (VCO) and an on-chip prescaler, covering the full operational frequency band of 57–64 GHz. Within this bandwidth, the upconverter exhibits an upconversion gain of 23.6–26.4 dB and a maximum output-referred 1-dB compression point of 14 dBm. The downconverter provides a Double Sideband (DSB) noise figure of 9–12 dB with a downconversion gain of 37–71 dB. On chip AC-coupling of the receiver IF-output with a lower −3 dB cut-off frequency as low as 16 kHz eliminates mixer DC-offsets and enables on-chip Intermediate Frequency (IF) amplification. The whole transceiver MMIC draws a current of 415 mA from a single 3.3 V supply and requires few components externally to the chip.

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Crispoldi, Flavia, Alessio Pantellini, Simone Lavanga, Antonio Nanni, Paolo Romanini, Leonardo Rizzi, Paola Farinelli, and Claudio Lanzieri. "Full integrated process to manufacture RF-MEMS and MMICs on GaN/Si substrate." International Journal of Microwave and Wireless Technologies 2, no. 3-4 (July 7, 2010): 333–39. http://dx.doi.org/10.1017/s1759078710000474.

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Radio Frequency Micro-Electro-Mechanical System (RF-MEMS) represents a feasible solution to obtain very low power dissipation and insertion loss, very high isolation and linearity switch with respect to “solid state” technologies. In this paper, we demonstrate the full integration of RF-MEMS switches in the GaN-HEMT (Gallium Nitride/High Electron Mobility Transistor) fabrication line to develop RF-MEMS devices and LNA-MMIC (Low Noise Amplifier/Monolithic Microwave Integrated Circuit) prototype simultaneously in the same GaN wafer. In particular, two different coplanar wave (CPW) LNAs and a series of discrete RF-MEMS in ohmic-series and capacitive-shunt configuration have been fabricated. RF-MEMS performances reveal an insertion loss and isolation better than 1 and 15 dB, respectively, in the frequency range 20–50 GHz in the case of pure capacitive shunt switches and in the frequency range 5–35 GHz for the ohmic-series switches. Moreover, the GaN HEMT device shows an Fmax of about 38 GHz and a power density of 6.5 W/mm, while for the best LNA-MMIC we have obtained gain better than 12 dB at 6–10 GHz with a noise figure of circa 4 dB, demonstrating the integration achievability.

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Hassona, Ahmed, Zhongxia Simon He, Vessen Vassilev, and Herbert Zirath. "D-band Waveguide Transition Based on Linearly Tapered Slot Antenna." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2017, NOR (July 1, 2017): 1–4. http://dx.doi.org/10.4071/2017-nor-hassona.

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Abstract In this work, an on-chip Monolithic Microwave Integrated Circuit (MMIC) to waveguide transition is realized based on Linearly Tapered Slot antenna (LTSA) structure. The antenna is implemented on a 50-um-thick Gallium Arsenide (GaAs) substrate and placed in the E-plane of an air-filled D-band waveguide. The transition shows a maximum insertion loss of 1 dB across the frequency range 110–170 GHz. The average return loss of the transition is −15 dB and the minimum is −9 dB. The structure occupies an area of 0.82×0.6 mm2. The transition provides low-loss wide-band connectivity for millimeter-wave systems and addresses integration challenges facing systems operating beyond 100 GHz.

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Passi, D., A. Leggieri, F. Di Paolo, M. Bartocci, A. Tafuto, and A. Manna. "High Efficiency Ka-Band Spatial Combiner." Advanced Electromagnetics 3, no. 2 (December 24, 2014): 10. http://dx.doi.org/10.7716/aem.v3i2.267.

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A Ka-Band, High Efficiency, Small Size Spatial Combiner (SPC) is proposed in this paper, which uses an innovatively matched quadruple Fin Lines to microstrip (FLuS) transitions. At the date of this paper and at the Author's best knowledge no such FLuS innovative transitions have been reported in literature before. These transitions are inserted into a WR28 waveguide T-junction, in order to allow the integration of 16 Monolithic Microwave Integrated Circuit (MMIC) Solid State Power Amplifiers (SSPA's). A computational electromagnetic model using the finite elements method has been implemented. A mean insertion loss of 2 dB is achieved with a return loss better the 10 dB in the 31-37 GHz bandwidth.

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Colantonio, Paolo, Rocco Giofrè, Fabio Vitobello, Mariano Lòpez, and Lorena Cabrìa. "A high efficiency 10W MMIC PA for K-b and satellite communications." International Journal of Microwave and Wireless Technologies 13, no. 6 (March 31, 2021): 582–94. http://dx.doi.org/10.1017/s1759078721000398.

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AbstractThis paper discusses the design steps and experimental characterization of a monolithic microwave integrated circuit (MMIC) power amplifier developed for the next generation of K-band 17.3–20.2 GHz very high throughput satellites. The technology used is a commercially available 100-nm gate length gallium nitride on silicon process. The chip was developed taking into account the demanding constraints of the spacecraft and, in particular, carefully considering the thermal constraints of such technology, in order to keep the junction temperature in all devices below 160°C in the worst-case condition (i.e., maximum environmental temperature of 85°C). The realized MMIC, based on a three-stage architecture, was first characterized on-wafer in pulsed regime and, subsequently, mounted in a test-jig and characterized under continuous wave operating conditions. In 17.3–20.2 GHz operating bandwidth, the built amplifier provides an output power >40 dBm with a power added efficiency close to 30% (peak >40%) and 22 dB of power gain.

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Xiong, Xuan, Ze Kun Feng, Xian Wang, and Zhong Yan Chen. "Effect of Dopants on the Microwave Magnetic Characteristics of FeCoBM-Al₂O₃ Soft Magnetic Thin Films." Advanced Materials Research 560-561 (August 2012): 797–802. http://dx.doi.org/10.4028/www.scientific.net/amr.560-561.797.

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A series of FeCoBM (M=Nb, Zr, Hf, Mo ,Ta, Ti)–Al2O3 ﬁlms were prepared on glass and polymer substrates by means of RF magnetron co-sputtering. Effect of dopants on the soft magnetic properties and microwave magnetic characteristics of FeCoBM-Al2O3 Thin Films were studied. To further tailor the magnetic characteristics of the films, the (Fe40Co40B20)94.5Hf2.5–(Al2O3)3 film was annealed at 200 to 400°C for 60 min. As a consequence, the (Fe40Co40B20)94.5Hf2.5–(Al2O3)3 film annealed at 350°C exhibit excellent properties with high saturation magnetization of 1197 kA/m, high resonant frequency of 1.76 GHz, and the real part of permeability is about 600, which is maintained up to 1.5GHz. These results show that the presented films possesses potential in designing micro-magnetic devices for Monolithic Microwave Integrated Circuit (MMIC) and surface mount technology (SMT)industry.

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Caddemi, Alina, Emanuele Cardillo, Salvatore Patanè, and Claudia Triolo. "Noise performance of an AlGaN/GaN monolithic microwave integrated circuit (MMIC) low‐noise amplifier under laser exposure." IET Microwaves, Antennas & Propagation 14, no. 5 (February 18, 2020): 409–13. http://dx.doi.org/10.1049/iet-map.2019.0776.

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Chen, Ruitao, Ruchun Li, Shouli Zhou, Shi Chen, Jianhua Huang, and Zhiyu Wang. "An X-Band 40 W Power Amplifier GaN MMIC Design by Using Equivalent Output Impedance Model." Electronics 8, no. 1 (January 16, 2019): 99. http://dx.doi.org/10.3390/electronics8010099.

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This paper presents an X-band 40 W power amplifier with high efficiency based on 0.25 μm GaN HEMT (High Electron Mobility Transistor) on SiC process. An equivalent RC (Resistance Capacitance) model is presented to provide accurate large-signal output impedances of GaN HEMTs with arbitrary dimensions. By introducing the band-pass filter topology, broadband impedance matching networks are achieved based on the RC model, and the power amplifier MMIC (Monolithic Microwave Integrated Circuit) with enhanced bandwidth is realized. The measurement results show that this power amplifier at 28 V operation voltage achieved over 40 W output power, 44.7% power-added efficiency and 22 dB power gain from 8 GHz to 12 GHz. The total chip size is 3.20 mm × 3.45 mm.

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Vereecke, Bart, Philippe Soussan, and Jian Zhu. "Investigation of Wafer Level Packaging schemes for 3D RF interposer multi-chip module." International Symposium on Microelectronics 2017, no. 1 (October 1, 2017): 000258–62. http://dx.doi.org/10.4071/isom-2017-wa41_030.

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Abstract Very small RF modules can be realized through heterogenous integration of GaAs MMIC (monolithic microwave integrated circuit) onto a low loss Si sub-mount, with high density routing lines realized by advanced patterning. In this paper we investigate how to integrate MMIC active devices on GaAs with the RF passives produced on an interposer, using Si wafer process technology. High resistive Silicon substrates are required to minimize RF losses. The interposer is thinned below 100 μm to reveal Cu TSVs from the back of the interposer, while the front side is covered entirely with a silicon capping wafer for shielding the device. We compare different wafer level packaging approaches for producing the low RF-loss interposers, and populating them using die-to-die (D2D) or die-to-wafer (D2W) bonding of the MMIC components, followed by wafer level encapsulation. Two D2W approaches are compared, in the first approach the D2W mounting and the encapsulation happens before the Si interposer is thinned for TSV reveal. To avoid damage during thinning of the wafer, thicker substrates with deeper TSV of 150 μm or more are required. In a second approach, the thinning of the interposer is done prior to the mounting. Initial electrical data showed that the approach yielded proper RF performance, but further yield optimization is required.

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Journal articles on the topic 'MMIC (Monolithic Microwave Integrated Circuit)'

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