Academic literature on the topic 'Mn-doped SnO2 and In2O3'

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Journal articles on the topic "Mn-doped SnO2 and In2O3"

1

Minami, Tadatsugu. "New n-Type Transparent Conducting Oxides." MRS Bulletin 25, no. 8 (2000): 38–44. http://dx.doi.org/10.1557/mrs2000.149.

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Most research to develop highly transparent and conductive thin films has focused on n-type semiconductors consisting of metal oxides. Historically, transparent conducting oxide (TCO) thin films composed of binary compounds such as SnO2 and In2O3 were developed by means of chemical- and physical-deposition methods. Impurity-doped SnO2 (Sb- or F-doped SnO2, e.g., SnO2:Sb or SnO2: F) and In2O3: Sn (indium tin oxide, ITO) films are in practical use. In addition to binary compounds, ternary compounds such as Cd2SnO4, CdSnO3, and CdIn2O4 were developed prior to 1980, but their TCO films have not yet been used widely.
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2

Korotcenkov, Ghenadii, V. Brinzari, L. Trakhtenberg, and B. K. Cho. "In2O3-Based Thin Films Deposited by Spray Pyrolysis as Promising Thermoelectric Material." Advanced Materials Research 1043 (October 2014): 40–44. http://dx.doi.org/10.4028/www.scientific.net/amr.1043.40.

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Structural, electrophysical and thermoelectric properties of nanoscaled In2O3films doped by Sn and Zn were studied. Thin films based on In2O3-SnO2and In2O3-SnO2-ZnO systems were prepared by spray pyrolysis method from water solutions of metal chlorides. It was confirmed that In2O3-based films, especially the In2O3:Sn ones, are promising material for applications related to thermoelectricity. The power factor of obtained films was found to be on the level of the best samples prepared on the base of ITO system.
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3

Zang, Guo Zhong, Li Ben Li, and Sheng Lai Wang. "Effects of Y2O3 and In2O3 on the Electrical Properties of SnO2-Based Varistors." Applied Mechanics and Materials 217-219 (November 2012): 741–45. http://dx.doi.org/10.4028/www.scientific.net/amm.217-219.741.

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The effects of Y2O3 and In2O3 on the microstructure and electrical properties of SnO2-based varistors were investigated. It was observed that the grain size of the samples decreased with doping Y2O3 and In2O3 and accordingly, the breakdown electrical field EB increased greatly. The measurements of barrier height and grain size reveal that the variation of grain size was not the only reason for the change of electrical properties of the sample doped with In2O3 and, the improvement of nonlinear coefficient α may mainly attribute to the increase of barrier height. Some energy levels of different state defects on the grain boundary were obtained and the energy about 0.15 eV detected here of all the samples may be attributed to the activation of . The different effects of doping Y2O3 and In2O3 indicate that In2O3 is more effective to improve nonlinear electrical behavior and breakdown electrical field of SnO2-based varistors.
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4

Wang, Nengwen, Y. H. Yang, Jian Chen, Ningsheng Xu, and Guowei Yang. "One-Dimensional Zn-Doped In2O3−SnO2 Superlattice Nanostructures." Journal of Physical Chemistry C 114, no. 7 (2010): 2909–12. http://dx.doi.org/10.1021/jp910802z.

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5

Hasan, Bushra A. "D.C conductivity of In2O3: SnO2 thin films and manufacturing of gas sensor." Iraqi Journal of Physics (IJP) 16, no. 37 (2018): 32–45. http://dx.doi.org/10.30723/ijp.v16i37.74.

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Compounds were prepared from In2O3 doped SnO2 with different doping ratio by mixing and sintering at 1000oC. Pulsed Laser Deposition PLD was used to deposit thin films of different doping ratio In2O3: SnO2 (0, 1, 3, 5, 7 and 9 % wt.) on glass and p-type wafer Si(111) substrates at ambient temperature under vacuum of 10-3 bar thickness of ~100nm. X-ray diffraction and atomic force microscopy were used to examine the structural type, grain size and morphology of the prepared thin films. The results show the structures of thin films was also polycrystalline, and the predominate peaks are identical with standard cards ITO. On the other side the prepared thin films declared a reduction of degree of crystallinity with the increase of doping ratio. Atomic Force Microscopy (AFM) measurements show the average grain size exhibit to change in non-systematic manner with the increase of doping ratio with tin oxide. The average grain size increases at doping ratios 1, 5 and 7 % from 52.48 to 79.12, 87.57, and 105.59 nm respectively and decreases at residual doping ratio. The average surface roughness increases from 0.458 to 26.8 nm with the increase of doping ratio. The gas sensing measurements of In2O3:SnO2 thin films prepared on p-Si to NO2 gas showed good sensitivity and Maximum sensitivity (50) obtained for In2O3:SnO2 prepared on p-Si at operating temperature 573 K and doping ratio 7 % and 9 %. Maximum speed of response time (8 sec) at operating temperature 573 K and doping ratio 1 %.
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6

Hasan, Bushra A. "SnO2 doped In2O3 thin films as reducing gas sensors." IOP Conference Series: Materials Science and Engineering 928 (November 19, 2020): 072011. http://dx.doi.org/10.1088/1757-899x/928/7/072011.

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7

Shimonosono, Taro, Go Hiramatsu, Yoshihiro Hirata, et al. "Electrochemical Properties of Cathode for Solid Oxide Fuel Cell with Gd-Doped Ceria Electrolyte." Advanced Materials Research 26-28 (October 2007): 275–78. http://dx.doi.org/10.4028/www.scientific.net/amr.26-28.275.

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Electrochemical properties (terminal voltage, ohmic resistance and overpotential) were measured for the cells of indium tin oxide (ITO, 90 mass% In2O3-10 mass% SnO2), perovskite-type oxide La0.6Sr0.4Co0.2Fe0.8O3 (LSCF) or SrRuO3 cathode / Gd-doped ceria electrolyte (Ce0.8Gd0.2O1.9, GDC, 600-700 μm thick) / Ni-GDC anode using 3 vol% H2O-containing H2 fuel at 873 and 1073 K. The highest power density was obtained for the cell with SrRuO3 cathode, and was 36 and 328 mW/cm2 at 873 and 1073 K, respectively. The voltage drop was larger for the cathode than for the anode. Both of the ohmic resistance and overpotential were lowest for the SrRuO3 cathode among the investigated cathodes.
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8

Weng, Xiao Long, Wu Tang, Yu Tao Wu, and Long Jiang Deng. "Microstructure and Resistivity of Low Temperature Deposition ITO Films on PET Substrate by Magnetron Sputtering." Key Engineering Materials 353-358 (September 2007): 1867–70. http://dx.doi.org/10.4028/www.scientific.net/kem.353-358.1867.

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Sn doped indium oxide (ITO) films were fabricated on polyethylene terephtalate (PET) substrate by magnetron sputtering at low deposition temperature using a 10 wt % SnO2-doped In2O3 target applied in the infrared regions as low emissivity materials. The microstructure and surface morphology of ITO films was studied using X-ray diffraction (XRD) and atomic force microscopy (AFM); the resistivity was investigated by four-point probe technology. It was found that the film with amorphous microstructure has highest resistivity to 1.956×10-3 2.cm at low deposition temperature and the surface roughness and resistivity increase with the increasing Ar sputtering pressure from 0.5Pa to 1.4Pa. The most interesting is that the resistivity increases with the increasing surface roughness, it indicates that there are internal correlation between roughness and resistivity.
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9

Lewis, Brian G., and David C. Paine. "Applications and Processing of Transparent Conducting Oxides." MRS Bulletin 25, no. 8 (2000): 22–27. http://dx.doi.org/10.1557/mrs2000.147.

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The first report of a transparent conducting oxide (TCO) was published in 1907, when Badeker reported that thin films of Cd metal deposited in a glow discharge chamber could be oxidized to become transparent while remaining electrically conducting. Since then, the commercial value of these thin films has been recognized, and the list of potential TCO materials has expanded to include, for example, Al-doped ZnO, GdInOx, SnO2, F-doped In2O3, and many others. Since the 1960s, the most widely used TCO for optoelectronic device applications has been tin-doped indium oxide (ITO). At present, and likely well into the future, this material offers the best available performance in terms of conductivity and transmissivity, combined with excellent environmental stability, reproducibility, and good surface morphology. The use of other TCOs in large quantities is application-specific. For example, tin oxide is now widely used in architectural glass applications.
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10

Matysiak, Wiktor, Tomasz Tański, and Weronika Monika Smok. "Morphology and structure characterization of crystalline SnO2 1D nanostructures." Photonics Letters of Poland 12, no. 3 (2020): 70. http://dx.doi.org/10.4302/plp.v12i3.1019.

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In recent years, many attempts have been made to improve the sensory properties of SnO2, including design of sensors based on one-dimensional nanostructures of this material, such as nanofibers, nanotubes or nanowires. One of the simpler methods of producing one-dimensional tin oxide nanomaterials is to combine the electrospinning method with a sol-gel process. The purpose of this work was to produce SnO2 nanowires using a hybrid electrospinning method combined with a heat treatment process at the temperature of 600 °C and to analyze the morphology and structure of the one-dimensional nanomaterial produced in this way. Analysis of the morphology of composite one-dimensional tin oxide nanostructures showed that smooth, homogeneous and crystalline nanowires were obtained. Full Text: PDF ReferencesN. Dharmaraj, C.H. Kim, K.W. Kim, H.Y. Kim, E.K. Suh, "Spectral studies of SnO2 nanofibres prepared by electrospinning method", Spectrochim. Acta - Part A Mol. Biomol. Spectrosc. 64, (2006) CrossRef N. Gao, H.Y. Li, W. Zhang, Y. Zhang, Y. Zeng, H. Zhixiang, ... & H. Liu, "QCM-based humidity sensor and sensing properties employing colloidal SnO2 nanowires", Sens. Actuators B Chem. 293, (2019), 129-135. CrossRef W. Ge, Y. Chang, V. Natarajan, Z. Feng, J. Zhan, X. Ma, "In2O3-SnO2 hybrid porous nanostructures delivering enhanced formaldehyde sensing performance", J.Alloys and Comp. 746, (2018) CrossRef M. Zhang, Y. Zhen, F. Sun, C. Xu, "Hydrothermally synthesized SnO2-graphene composites for H2 sensing at low operating temperature", Mater. Sci. Eng. B. 209, (2016), 37-44. CrossRef Y. Zhang, X. He, J. Li, Z. Miao, F. Huang, "Fabrication and ethanol-sensing properties of micro gas sensor based on electrospun SnO2 nanofibers", Sens. Actuators B Chem. 132, (2008), 67-73. CrossRef W.Q. Li, S.Y. Ma, J. Luo, Y.Z. Mao, L. Cheng, D.J. Gengzang, X.L. Xu, S H. Yan, "Synthesis of hollow SnO2 nanobelts and their application in acetone sensor", Mater. Lett. 132, (2014), 338-341. CrossRef E. Mudra, I. Shepa, O. Milkovic, Z. Dankova, A. Kovalcikova, A. Annusova, E. Majkova, J. Dusza, "Effect of iron doping on the properties of SnO2 nano/microfibers", Appl. Surf. Sci. 480, (2019), 876-881. CrossRef P. Mohanapriya, H. Segawa, K. Watanabe, K. Watanabe, S. Samitsu, T.S. Natarajan, N.V. Jaya, N. Ohashi, "Enhanced ethanol-gas sensing performance of Ce-doped SnO2 hollow nanofibers prepared by electrospinning", Sens. Actuators B Chem. 188, (2013), 872-878. CrossRef W.Q. Li, S.Y. Ma, Y.F. Li, X.B. Li, C.Y. Wang, X.H. Yang, L. Cheng, Y.Z. Mao, J. Luo, D.J. Gengzang, G.X. Wan, X.L. Xu, "Preparation of Pr-doped SnO2 hollow nanofibers by electrospinning method and their gas sensing properties", J.Alloys and Comp. 605, (2014), 80-88. CrossRef X.H. Xu, S.Y. Ma, X.L. Xu, T. Han, S.T. Pei, Y. Tie, P.F. Cao, W.W. Liu, B.J. Wang, R. Zhang, J.L. Zhang, "Ultra-sensitive glycol sensing performance with rapid-recovery based on heterostructured ZnO-SnO2 hollow nanotube", Mater. Lett, 273, (2020), 127967. CrossRef F. Li, X. Gao, R. Wang, T. Zhang, G. Lu, Sens. "Study on TiO2-SnO2 core-shell heterostructure nanofibers with different work function and its application in gas sensor", Actuators B Chem, 248, (2017), 812-819. CrossRef S. Bai, W. Guo, J. Sun, J. Li, Y. Tian, A. Chen, R. Luo, D. Li, "Synthesis of SnO2–CuO heterojunction using electrospinning and application in detecting of CO", Sens Actuators B Chem, 226, (2016), 96-103. CrossRef H. Du, P.J. Yao, Y. Sun, J. Wang, H. Wang, N. Yu, "Electrospinning Hetero-Nanofibers In2O3/SnO2 of Homotype Heterojunction with High Gas Sensing Activity", Sensors, 17, (2017), 1822. CrossRef X. Wang, H. Fan, P. Ren, "Electrospinning derived hollow SnO2 microtubes with highly photocatalytic property", Catal. Commun. 31, (2013), 37-41. CrossRef L. Cheng, S.Y. Ma, T.T. Wang, X.B. Li, J. Luo, W.Q. Li, Y.Z. Mao, D.J Gengzang, "Synthesis and characterization of SnO2 hollow nanofibers by electrospinning for ethanol sensing properties", Mater. Lett. 131, (2014), 23-26. CrossRef P.H. Phuoc, C.M. Hung, N.V. Toan, N.V. Duy, N.D. Hoa, N.V. Hieu, "One-step fabrication of SnO2 porous nanofiber gas sensors for sub-ppm H2S detection", Sens. Actuators A Phys. 303, (2020), 111722. CrossRef A.E. Deniz, H.A. Vural, B. Ortac, T. Uyar, "Gold nanoparticle/polymer nanofibrous composites by laser ablation and electrospinning", Matter. Lett. 65, (2011), 2941-2943. CrossRef S. Sagadevan, J. Podder, "Investigation on Structural, Surface Morphological and Dielectric Properties of Zn-doped SnO2 Nanoparticles", Mater. Res. 19, (2016), 420-425. CrossRef
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