Academic literature on the topic 'Mn doped with KCl'

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Journal articles on the topic "Mn doped with KCl"

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Talebi, M., M. Zahedifar, and E. Sadeghi. "UVC dosimetry properties of Mn and Ce doped KCl thermoluminescent phosphor produced by co-precipitation method." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 458 (November 2019): 97–104. http://dx.doi.org/10.1016/j.nimb.2019.08.008.

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Tu, S., and G. J. Racz. "Effect of KCl on bioavailability of manganese." Canadian Journal of Soil Science 74, no. 1 (February 1, 1994): 93–98. http://dx.doi.org/10.4141/cjss94-012.

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Studies were conducted to determine whether KCl application alone or in combination with Mn fertilizer would increase the bioavailability of indigenous and applied Mn and to study the mechanisms by which KCl could enhance Mn uptake by crops. The effect of rates of application (0, 50, 100 and 300 μg K g−1) of two KCl carriers (fertilizer grade and reagent grade KCl), as well as the effects of various salts (KCl, MnSO4, K2SO4, K2CO3, KCl + MnSO4, and KCl + MnSO4 + KI) on Mn uptake by wheat were examined. The effect of KCl on the solubility of soil Mn and applied Mn and the effect of K2SO4 on solubility of soil Mn were examined in calcareous and noncalcareous soils.The two KCl carriers behaved similarly in affecting Mn uptake by wheat. On the calcareous soil only the highest rate of KCl significantly enhanced Mn uptake, whereas on the slightly acidic soil both 100 and 300 μg K g−1 treatments significantly increased Mn uptake. Different salts differed significantly in affecting Mn uptake by wheat, and their effect was observed in the order KCl > K2SO4 > > K2CO3 in both soils, with Mn uptake with K2CO3 being less than in the control. Application of KCl alone, at the higher rates, was as effective as MnSO4 alone in increasing Mn uptake by wheat. Mn uptake by wheat with dual application of MnSO4 and KCl was greater than with separate applications of MnSO4 or KCl. Addition of KCl to MnSO4 fertilizer bands increased amounts of water-soluble Mn in the fertilizer bands. K2SO4 was almost as effective as KCl in increasing water-soluble Mn in MnSO4 fertilizer bands but only for short periods of time (1–3 d). In contrast, KCl increased Mn solubility in the MnSO4 bands for periods up to 56 d. Key words: KCl fertilizer, KCl-enhanced Mn uptake, Mn availability, Mn solubility
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Krishnamurti, G. S. R., and P. M. Huang. "Kinetics of potassium chloride-induced Mn release from selected Mn-toxic soils of Indonesia and the United States of America." Canadian Journal of Soil Science 74, no. 1 (February 1, 1994): 39–46. http://dx.doi.org/10.4141/cjss94-005.

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The Mn release by M KCl from two Oxisols from Indonesia and one Inceptisol from Oregon, USA was studied at different temperatures (25, 35 and 45 °C) to understand the kinetics and mechanism of Mn release from these soils, which were reported to have a Mn toxicity problem. The Mn release by M KCl continued to increase with time up to at least 772 h without reaching equilibrium. The kinetics of Mn release followed a parabolic diffusion model during the 0.25–772 h reaction period. The activation energy of Mn release, calculated from the overall diffusion coefficients, varied from 34 to 47 kJ mol−1. Even after removing the exchangeable Mn from the soils with M calcium nitrate, significant amounts of Mn were released by M KCl. Data presented indicate that ionic strength effect coupled with Cl complexation was the main mechanism governing the KCl-induced Mn release. The Mn release from the soils during the initial reaction period (0.25 h) was fast and accounted for 34–39% of the total amount of Mn released during the 772 h reaction period. The significantly high Mn release during the initial 0.25 h reaction time, the high overall diffusion coefficients of Mn release, and the high values of the pre-exponential factor (calculated from the Arrhenius equation) of Mn release from Mn-toxic soils apparently contributed to the KCl-induced Mn toxicity in these soils. Key words: Potassium chloride-induced Mn toxicity, pre-exponential factor, ionic strength, complexation
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Enss, C., M. Gaukler, M. Nullmeier, R. Weis, and A. Würger. "Novel Dielectric Relaxation inLi+doped KCl." Physical Review Letters 78, no. 2 (January 13, 1997): 370–73. http://dx.doi.org/10.1103/physrevlett.78.370.

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Tornow, M., R. Weis, G. Weiss, C. Enss, and S. Hunklinger. "Dielectric measurements on Li+ doped KCl." Physica B: Condensed Matter 194-196 (February 1994): 1063–64. http://dx.doi.org/10.1016/0921-4526(94)90861-3.

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Zhang, Y., C. H. Cheng, X. S. Yang, C. Ke, and Y. Zhao. "Superconductivity and ferromagnetism in Mn-doped La0.84PrSr0.16CuO4 and Mn-doped LaPr0.88Ce0.12CuO4." Physics Procedia 27 (2012): 36–39. http://dx.doi.org/10.1016/j.phpro.2012.03.404.

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Enss, C., M. Gaukler, S. Hunklinger, M. Tornow, R. Weis, and A. Würger. "Low-frequency dielectric susceptibility ofLi+-doped KCl." Physical Review B 53, no. 18 (May 1, 1996): 12094–106. http://dx.doi.org/10.1103/physrevb.53.12094.

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Heynderickx, I., E. Goovaerts, S. V. Nistor, and D. Schoemaker. "Site-switchedTl0atoms inTl+-doped NaCl and KCl." Physical Review B 33, no. 3 (February 1, 1986): 1559–66. http://dx.doi.org/10.1103/physrevb.33.1559.

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Sato, K., G. A. Medvedkin, T. Ishibashi, S. Mitani, K. Takanashi, Y. Ishida, D. D. Sarma, et al. "Novel Mn-doped chalcopyrites." Journal of Physics and Chemistry of Solids 64, no. 9-10 (September 2003): 1461–68. http://dx.doi.org/10.1016/s0022-3697(03)00101-x.

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Zhai, Q., J. Li, J. S. Lewis, K. A. Waldrip, K. Jones, P. H. Holloway, M. Davidson, and N. Evans. "Microstructure and electroluminescence of ZnS:Mn doped with KCl." Thin Solid Films 414, no. 1 (July 2002): 105–12. http://dx.doi.org/10.1016/s0040-6090(02)00435-2.

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Dissertations / Theses on the topic "Mn doped with KCl"

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Hayashi, Hiroyuki. "Structure and Magnetism of Mn-doped γ-Ga2O3." 京都大学 (Kyoto University), 2010. http://hdl.handle.net/2433/120813.

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Martel, Guillermo Guzman. "Espectroscopia de absorção e emissão de CN- em KCl." Universidade de São Paulo, 1986. http://www.teses.usp.br/teses/disponiveis/54/54132/tde-14112014-103422/.

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Neste trabalho foram estudados alguns aspectos de espectroscopia de absorção e emissão de CN- em KCl. As amostras são de duas procedências: 1) Amostras de KCl + 1 mol % KCN com grau de ultra-alta pureza da Universidade de Utah. 2) Amostras de KCl + 1 mol % KCN com pequenas concentrações de OCN- introduzidas despropositadamente no crescimento. Foram comparados os resultados destas amostras. Os resultados do dicroísmo induzido mostram que nesta concentração de 1%, as moléculas de CN- tem posição de mínimo na direção [111], confirmando o modelo de dipolos [111] para concentrações menores. Um dos resultados mais interessantes é que foi observada a emissão vibracional CN- mesmo nas amostras que continham pequenas concentrações de OCN- (∼ 10-2 mol %) e que antes era considerado como inibidor da fluorescência. A emissão vibracional foi obtida pela excitação induzida do CN- acoplado com o centro F, usando a linha 514nm de um laser de Ar+ para excitar o centro F e observando a fluorescência vibracional do CN- em 4,8 μm. Também é mostrado o estudo do comportamento da fluorescência do CN- em várias concentrações de centro F
In this work were studied some aspects of absorption and emission spectroscopy of KCl: CN- single crystals. Samples were taken from two sources: High purity grade of KCl + 1 % KCN from University of Utah. Pro analysis grade of KCl + 1% KCN from IFQSC-USP which have some NCO- molecules introduced unpurposely during the growth. The results due to both types of samples are compared. The induced dicroism under uniaxial stress show that even under this 1% concentration, the CN- reorient in a [111] multiwall potential, confirming the [111] elastic dipole model for much lower concentration. One of the most interesting results is that we got CN- vibrational emission even under small concentrations of NCO- (∼ 10-2 mol %) which was first consider as fluorescence inhibitor. The vibrational emission was obtained by induced excitation of CN- coupled with F center, so we used the 514nm line of an Ar+ laser to excite the F center and observe the vibrational fluorescence of the CN- at 4,8 μm. Also we show a study of the fluorescence behavior under different F center concentrations
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Walsh, Michael C. "Giant magnetoresistance in bismuth doped La-Ca-Mn-O perovskites." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1997. http://www.collectionscanada.ca/obj/s4/f2/dsk2/ftp04/mq24937.pdf.

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Mandal, Saptarshi. "Study of Mn doped HfO2 based Synaptic Devices for Neuromorphic Applications." University of Toledo / OhioLINK, 2013. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1384535471.

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Ruggiero, Lígia de Oliveira. "Produção e caracterização de filmes de KCl e KBr impurificados com íons Cu+." Universidade de São Paulo, 1994. http://www.teses.usp.br/teses/disponiveis/76/76132/tde-21022014-161602/.

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Através do processo de evaporação térmica é possível produzir filmes de KCl e KBr altamente dopados com íons Cu+. Investigamos o efeito de altas concentrações de Cu+ (1020 - 1021 cm -3) nestes filmes policristalinos, onde, associado com o efeito fora de centro do Cu+, origina uma forte banda de absorção propícia para aplicação ótica destes filmes como filtros passa banda na região do UV. Os filmes estudados, de 1 UM, foram preparados por coevaporação resistiva de KCl (Br), como hospedeiro, com 1 a 10% de CuCl(Br), como dopante, sobre diferentes substratos. Diversas técnicas foram usadas para obter as propriedades estrutural e ótica, tais como: microscopia eletrônica de varredura (MEV), difração de raios-X, elipsometria, absorção ótica e transmitância. Do estudo da morfologia é observado um aumento na densidade dos grãos com a concentração nominal de Cu+ de até 1021 átomos/cm-3. Este comportamento também resulta em um aumento na transmitância na região do visível. A banda de absorção em 266 nm (278 nm) para KCl ()KBr): Cu+ é atribuída à transição eletrônica parcialmente permitida de 3d10 3d94s e sua área integrada em função da temperatura mostra o comportamento da força do oscilador com a temperatura, que é propriedade do efeito fora de centro. A este efeito fora de centro está associado um dipolo elétrico devido ao deslocamento da carga da posição substitucional. Para verificar a existência de um sistema de relaxação dipolar elétrica, usamos o método de Corrente de Despolarização Termicamente Estimulada (CDTE). As medidas de CDTE mostram uma fraca e alargada banda em 49K, com energia de ativação média de 147 meV e um fator pré-exponencial de 2x10-14 seg, para amostras de KCl + 1% CuCl, com 3 UM de espessura. Nossos resultados são discutidos e comparados com outros observados em monocristais do mesmo material
Through the thermal evaporation procedure it is possible to obtain highly Cu+ doped KCl and KBr films. We have investigated the effect of 1020 - 1021 cm-3 Cu
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Al-Ahmadi, Noorah Ahmed. "Investigation of the electrical properties of III-V semiconductor doped with Mn." Thesis, University of Nottingham, 2011. http://eprints.nottingham.ac.uk/28686/.

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III-V semiconductors doped with Mn atoms have been studied recently for their potential applications in spintronic devices. These materials are referred to as diluted magnetic semiconductors (DMS) or ferromagnetic semiconductors. The lattice of these materials has Mn atoms (transition metal) and due to their half filled shell carries a spin and also donates carriers, "p-type" in case of Mn doping to the semiconductor lattice. Ferromagnetism is mediated by exchange interactions between localized d electrons and p-type carriers. A high transition temperature (in fact above room temperature) called Curie point, is necessary for these materials to have a practical value. The transition temperature Tc depends on the densities of both Mn impurity and the resultant hole concentration. A low density of defects, a high crystal quality and a high concentration of Mn atoms are desirable to achieve a high Tc. Additionally, cubic (zinc blende) structure offers several advantages over the hexagonal structure normally obtained for III-V semiconductors e.g. a higher crystal symmetry, smaller effective masses, higher carrier mobility, and significantly a higher doping density-which is expected to give a higher value of Tc. Both GaMnAs and GaMnN have been the materials of choice and have been studied intensely. The problems however, are related to fabricated technique, crystal quality and achieving a high doping concentration. The materials exhibit a solubility limit beyond which doping concentration are difficult to achieve. This thesis describes the investigation of the electronic properties of the zinc blend GaMnAs and GaMnN films grown at low temperature by molecular beam epitaxy (MBE) for varies concentration of Mn doping over the temperature range 15-400 K. Metal/c-GaAs: Mn/c-GaAs:Si p n junctions were studied by the I-V, C-V and C-F methods over the temperature range 15-400 K. It was found that I-V-T data could be interpreted on the basis of a back to back diode model. The c-GaAs:Mn made a Schottky contact with the metal and a p n junction with c-GaAs:Si. It was found that for the forward bias, where metal was biased negative with respect to the GaAs:Mn, the 1- v -T data could also be analysed on the basis of a Schottky behaviour. Here ideality factor n increased and the barrier height Φb decreased with temperature. This was seen to be a consequence of TFE through the metal/GaAs barrier. This was borne out by the Richardson's plots [ln (ls/T2) versus 103/nT] which exhibited straight lines. The slope indicated the barrier heights, which ranged between 1.1-1.4 eV. The backward diode on the other hand gave a barrier height of 1.4 eV, which was compatible with the proposed model. C-V-T measurements could also be accounted for, at least qualitatively, on the basis of the proposed back to back diode model. The device structure of c-GaMnN was planar. Both the Ohmic and Schottky contact were in the same plane on the top surface. I-V measurements were performed over the temperature range 100-480 K. I-V-T was explained in the terms of the Schottky model. The current was limited, however, by the Poole-Frenkel type centres in the bulk which behaved as an insulator (high resistivity semiconductor). The C-V–T was satisfactorily accounted for on the basis of MIS/MOS model. Low temperature grown films had poor material quality which made any correlation between samples difficult.
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Pandey, Sudip. "MAGNETIC, TRANSPORT, AND MAGNETOCALORIC PROPERTIES OF BORON DOPED Ni-Mn-In ALLOYS." OpenSIUC, 2015. https://opensiuc.lib.siu.edu/theses/1754.

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The impact of B substitution in Ni50Mn35In15-xBx Heusler alloys with x = (0, 0.5, 0.75, 1, 1.1 1.5, and 2) on the structural, magnetic, transport, and parameters of magnetocaloric effect has been studied by means of room temperature XRD-diffraction, differential scanning calorimetry (DSC), and thermomagnetic measurements (in a magnetic field up to 5 T and temperature interval 5-400 K). Direct adiabatic temperature (ΔTAD) measurements have been carried out for an applied magnetic field change (ΔH) of 1.8 T. The partial substitution of In by B in Ni50Mn35In15-xBx Heusler alloys induced a non-linear temperature shift of the magnetostructural transition while Curie temperature (TC) was found to be nearly constant (TC ~ 320 K) for all compounds. The transition temperatures (T-x) phase diagram has been constructed for H = 0.005 T. The MCE parameters were found to be larger or comparable to parameters observed in other MCE materials, such as Ni50Mn34.8In14.2B and Ni50Mn35In14X (X=In, Al, and Ge) Heusler alloys. It has been demonstrated that the martensitic transformation temperature and the corresponding ∆SM can be tuned through a slight variation in composition of B in NiMnInB alloys. A magnetoresistance associated with martensitic transformation was found to be -60% for x = 0.75 at T = 240 K for a magnetic field change of 5 T. The maximum absolute value of ΔTAD = 2.5 K was observed at the magnetostructural transition for Ni50Mn35In14.5B0.5. The roles of the magnetic and structural changes on the transition temperatures are discussed.
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Long, Phan The. "Synthesis and characterization of Mn-Doped ZnO sprintronic materials: Polycrystalline ceramics, thin films, and nanostructures." Thesis, University of Bristol, 2008. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.492507.

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Recent theoretical calculations have predicted that ZnO doped with Mn exhibits room-temperature ferromagnetism. This has attracted intensive interest, because of its prospective applications in spintronic devices. However, experimental studies on Mndoped ZnO materials have revealed that their magnetic properties vary from the ferromagnetic through antiferromagnetic and spin-glass to the paramagnetic. This makes the question of the origin of ferromagnetism in Mn-ZnO materials become more complicated.
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Liu, Zhongsheng. "Magnetic MAX phases: Itinerant electron magnetism of pure and Mn-doped Cr-based MAX phases." 京都大学 (Kyoto University), 2015. http://hdl.handle.net/2433/199312.

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Tsai, Yi-Lin. "Phase relationships and electrical properties of undoped and Mn-doped ACu₃(Ti,Nb,Ta)₄O₁₂ perovskites." Thesis, University of Sheffield, 2010. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.537998.

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Books on the topic "Mn doped with KCl"

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Yang, Heesun. Syntheses and applications of Mn-doped II-VI semiconductor nanocrystals. 2003.

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Cao, Gang, and Lance DeLong. Physics of Spin-Orbit-Coupled Oxides. Oxford University Press, 2021. http://dx.doi.org/10.1093/oso/9780199602025.001.0001.

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Prior to 2010, most research on the physics and chemistry of transition metal oxides was dominated by compounds of the 3d-transition elements such as Cr, Mn, Fe, Co, Ni, and Cu. These materials exhibited novel, important phenomena that include giant magnetoresistance in manganites, as well as high-temperature superconductivity in doped La2CuO4 and related cuprates. The discovery in 1994 of an exotic superconducting state in Sr2RuO4 shifted some interest toward ruthenates. Moreover, the realization in 2008 that a novel variant of the classic Mott metal-insulator transition was at play in Sr2IrO4 provided the impetus for a burgeoning group of studies of the influence of strong spin-orbit interactions in “heavy” (4d- and 5d-) transition-element oxides. This book reviews recent experimental and theoretical evidence that the physical and structural properties of 4d- and 5d-oxides are decisively influenced by strong spin-orbit interactions that compete or collaborate with comparable Coulomb, magnetic exchange, and crystalline electric field interactions. The combined effect leads to unusual ground states and magnetic frustration that are unique to this class of materials. Novel couplings between the orbital/lattice and spin degrees of freedom, which lead to unusual types of magnetic order and other exotic phenomena, challenge current theoretical models. Of particular interest are recent investigations of iridates and ruthenates focusing on strong spin-orbit interactions that couple the lattice and spin degrees of freedom.
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Book chapters on the topic "Mn doped with KCl"

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Bouhani-Benziane, H., K. Hebali, A. Bakhti-Siad, O. Sahnoun, M. Baira, and M. Sahnoun. "Formation Energies of Mn Doped ZnSnAs2." In Proceedings of the Third International Symposium on Materials and Sustainable Development, 10–14. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-89707-3_2.

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Zalamai, V. V., A. V. Tiron, M. S. Iovu, and N. N. Syrbu. "Optical Activity in Mn Doped As2S3 Glasses." In IFMBE Proceedings, 79–82. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-030-31866-6_17.

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Nishida, Akihiko, Chihiro Taka, and Kazumi Horai. "ESR Observations in Mn-Doped YBa2Cu3O7-δ Superconductors." In Advances in Superconductivity X, 187–90. Tokyo: Springer Japan, 1998. http://dx.doi.org/10.1007/978-4-431-66879-4_43.

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Kaise, Masahiro, Masagi Mizuno, Chizuko Nishihara, Hisakazu Nozoye, and Hitoshi Shindo. "Superconducting Properties and ESR of Mn-Doped YBa2Cu3O7-x." In Advances in Superconductivity II, 543–46. Tokyo: Springer Japan, 1990. http://dx.doi.org/10.1007/978-4-431-68117-5_117.

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Desimoni, J., S. M. Cotes, M. A. Taylor, and R. C. Mercader. "Formation of Mn-doped iron silicides by ball milling." In ICAME 2005, 959–64. Berlin, Heidelberg: Springer Berlin Heidelberg, 2006. http://dx.doi.org/10.1007/978-3-540-49853-7_42.

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Bhuvaneswari, M., and S. Sendhilnathan. "Preparation and Characterization of Cobalt Doped Mn-Zn Ferrites." In Lecture Notes in Mechanical Engineering, 603–9. India: Springer India, 2012. http://dx.doi.org/10.1007/978-81-322-1007-8_55.

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Peng, W. Q., S. C. Qu, G. W. Cong, and Z. G. Wang. "Structural and Optical Investigation of Mn-Doped ZnS Nanocrystals." In Materials Science Forum, 1795–98. Stafa: Trans Tech Publications Ltd., 2005. http://dx.doi.org/10.4028/0-87849-960-1.1795.

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Monteiro, T. "Luminescence of Broad Bands in Mn-Doped n-Type GaP." In Optical Properties of Excited States in Solids, 706. Boston, MA: Springer US, 1992. http://dx.doi.org/10.1007/978-1-4615-3044-2_53.

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Valeev, Rishat G., Alexander V. Vakhrushev, Aleksey Yu Fedotov, and Dmitrii I. Petukhov. "Optical Properties of Electroluminescent Nanostructures of Cu and Mn-Doped ZnS." In Nanostructured Semiconductors in Porous Alumina Matrices, 191–203. Includes bibliographical references and index.: Apple Academic Press, 2019. http://dx.doi.org/10.1201/9780429398148-9.

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Taguchi, T. "Bound-Excitonic Emissions in Undoped and Mn-Doped ZnS Single Crystals." In Springer Proceedings in Physics, 93–97. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-93430-8_17.

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Conference papers on the topic "Mn doped with KCl"

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Yang, S. H., C. H. Wang, Y. H. Ling, and C. F. Do. "Preparation and Characterization of white ZnS:Pr,Mn,KCl Phosphor." In 2010 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2010. http://dx.doi.org/10.7567/ssdm.2010.p-8-7.

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Zhou, Huiying, Shengchun Qu, Shuzhi Liao, Fasheng Zhang, Junpeng Liu, and Zhanguo Wang. "Photoluminescence of Mn+doped GaAs." In 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies, edited by Ya-Dong Jiang, Bernard Kippelen, and Junsheng Yu. SPIE, 2010. http://dx.doi.org/10.1117/12.866642.

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Manikandan, M., A. Muthukumaran, and C. Venkateswaran. "Induced antiferromagnetism in Mn doped BaMgF4." In SOLID STATE PHYSICS: Proceedings of the 58th DAE Solid State Physics Symposium 2013. AIP Publishing LLC, 2014. http://dx.doi.org/10.1063/1.4873016.

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Patra, N., A. K. Bakshi, and D. Bhattacharyya. "EXAFS measurements on Mn doped CaF2 phosphor with different Mn concentrations." In DAE SOLID STATE PHYSICS SYMPOSIUM 2015. Author(s), 2016. http://dx.doi.org/10.1063/1.4947832.

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Zhydachevskii, Ya, A. Suchocki, and M. Berkowski. "Thermoluminescent properties of Mn-doped YAP ceramics." In 2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE). IEEE, 2012. http://dx.doi.org/10.1109/omee.2012.6464742.

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Karmakar, R., S. K. Neogi, A. Banerjee, S. Bandyopadhyay, Alok Banerjee, A. Mallik, P. K. Maity, Amitabha Ghoshray, Bilwadal Bandyopadhyay, and Chandan Mazumdar. "Absence of Ferromagnetism in Mn Doped ZnO." In INTERNATIONAL CONFERENCE ON MAGNETIC MATERIALS (ICMM-2010). AIP, 2011. http://dx.doi.org/10.1063/1.3601818.

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Manikandan, M., and C. Venkateswaran. "Observation of ferromagnetism in Mn doped KNbO3." In NANOFORUM 2014. AIP Publishing LLC, 2015. http://dx.doi.org/10.1063/1.4918184.

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Shen, Xiaonong, JianHua Zhao, Shujun Zhang, and Huanchu Chen. "Photorefractive properties of Mn-doped KNSBN crystals." In Electronic Imaging, edited by Stephen A. Benton, Sylvia H. Stevenson, and T. John Trout. SPIE, 2000. http://dx.doi.org/10.1117/12.380023.

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Galicka, M., M. Bukala, R. Buczko, P. Kacman, Jisoon Ihm, and Hyeonsik Cheong. "Ferromagnetism in Mn-doped III-V Nanowires." In PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors. AIP, 2011. http://dx.doi.org/10.1063/1.3666589.

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Padmasree, G., S. Shravan Kumar Reddy, N. Pavan Kumar, P. Yadagiri Reddy, and Ch Gopal Reddy. "Magnetization studies of Mn doped YFeO3 multiferroics." In ADVANCED MATERIALS AND RADIATION PHYSICS (AMRP-2020): 5th National e-Conference on Advanced Materials and Radiation Physics. AIP Publishing, 2021. http://dx.doi.org/10.1063/5.0053022.

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