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Relevant bibliographies by topics / Modified chemical vapor deposition / Dissertations / Theses

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Dissertations / Theses on the topic 'Modified chemical vapor deposition'

Author: Grafiati

Published: 4 June 2021

Last updated: 13 February 2022

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1

Romanos, Georgius E., Anastasios Labropoulos, and Nick Kanellopoulos. "Innovative methods for the characterization of ceramic nanofiltration membranes modified by TEOS/O3 chemical vapor deposition." Universitätsbibliothek Leipzig, 2016. http://nbn-resolving.de/urn:nbn:de:bsz:15-qucosa-196648.

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2

Romanos, Georgius E., Anastasios Labropoulos, and Nick Kanellopoulos. "Innovative methods for the characterization of ceramic nanofiltration membranes modified by TEOS/O3 chemical vapor deposition." Diffusion fundamentals 2 (2005) 102, S. 1-2, 2005. https://ul.qucosa.de/id/qucosa%3A14440.

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3

SHINOHARA, Hisanori, Toshiki SUGAI, and Naoki KISHI. "Synthesis of Single- and Double-Wall Carbon Nanotubes by Gas Flow-Modified Catalyst-Supported Chemical Vapor Deposition." Institute of Electronics, Information and Communication Engineers, 2009. http://hdl.handle.net/2237/14982.

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4

Yoshikawa, Naruo. "The chemical and photochemical reactivity of modified and unmodified high area titania surfaces." Thesis, University of Southampton, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.343010.

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5

Niiranen, Pentti. "Electrically Modified Quartz Crystal Microbalance to Study Surface Chemistry Using Plasma Electrons as Reducing Agents." Thesis, Linköpings universitet, Kemi, 2021. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-176607.

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Metallic films are important in various applications, such as electric devices where it can act as contacts. In electrical devices, the substrate typically consists of silicon dioxide (SiO2) which is a temperature-sensitive substrate. Therefore, plasma enhanced chemical vapor deposition (PECVD) are better suited than thermally activated chemical vapor deposition (CVD). Depositing metallic films with PECVD demands co-reactants that act as reducing agents. However, these are not well-studied and do not always have the power enough to perform the reduction reaction for metals. Recently it has bee

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6

Haberer, Elaine D. (Elaine Denise) 1975. "Particle generation in a chemical vapor deposition/plasma-enhanced chemical vapor deposition interlayer dielectric tool." Thesis, Massachusetts Institute of Technology, 1998. http://hdl.handle.net/1721.1/8992.

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Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 1998.<br>Includes bibliographical references (p. 77-79).<br>The interlayer dielectric plays an important role in multilevel integration. Material choice, processing, and contamination greatly impact the performance of the layer. In this study, particle generation, deposition, and adhesion mechanisms are reviewed. In particular, four important sources of interlayer dielectric particle contamination were investigated: the cleanroom environment, improper wafer handling, the backside of the wafer, and

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7

Karaman, Mustafa. "Chemical Vapor Deposition Of Boron Carbide." Phd thesis, METU, 2007. http://etd.lib.metu.edu.tr/upload/3/12608778/index.pdf.

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Boron carbide was produced on tungsten substrate in a dual impinging-jet CVD reactor from a gas mixture of BCl3, CH4, and H2. The experimental setup was designed to minimise the effect of mass transfer on reaction kinetics, which, together with the on-line analysis of the reactor effluent by FTIR, allowed a detailed kinetic investigation possible. The phase and morphology studies of the products were made by XPS, XRD,micro hardness and SEM methods. XPS analysis showed the existence of chemical states attributed to the boron carbide phase, together with the existence of oxy-boron carbide speci

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8

Pickering, Elliot. "Chemical vapor deposition of Ti₃SiC₂." Thesis, Georgia Institute of Technology, 1998. http://hdl.handle.net/1853/19463.

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9

Barua, Himel Barua. "COMPUTATIONAL MODELING OF CHEMICAL VAPOR DEPOSITION." University of Akron / OhioLINK, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=akron1469721885.

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10

Sukkaew, Pitsiri. "A Quantum Chemical Exploration of SiC Chemical Vapor Deposition." Doctoral thesis, Linköpings universitet, Halvledarmaterial, 2017. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-133941.

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SiC is a wide bandgap semiconductor with many attractive properties. It hasattracted particular attentions in the areas of power and sensor devices as wellas biomedical and biosensor applications. This is owing to its properties suchas large bandgap, high breakdown electric field, high thermal conductivitiesand chemically robustness. Typically, SiC homoepitaxial layers are grownusing the chemical vapor deposition (CVD) technique. Experimental studiesof SiC CVD have been limited to post-process measuring of the layer ratherthan in situ measurements. In most cases, the observations are presented

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11

Park, Jae-hyoung. "Process planning for laser chemical vapor deposition." Thesis, Georgia Institute of Technology, 2003. http://hdl.handle.net/1853/18367.

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12

Martin, Tyler Philip. "Platinumisilica Thin Films by Chemical Vapor Deposition." Fogler Library, University of Maine, 2002. http://www.library.umaine.edu/theses/pdf/MartinTP2002.pdf.

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13

Danielsson, Örjan. "Simulations of silicon carbide chemical vapor deposition /." Linköping : Univ, 2002. http://www.bibl.liu.se/liupubl/disp/disp2002/tek773s.pdf.

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14

Chen, Yu-Chun Wilamowski Bogdan M. Tzeng Y. "Diamond chemical vapor deposition and practical applications." Auburn, Ala., 2009. http://hdl.handle.net/10415/1774.

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15

Si, Jie. "Metalorganic chemical vapor deposition of metal oxides." Thesis, This resource online, 1993. http://scholar.lib.vt.edu/theses/available/etd-12302008-063204/.

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16

Nemirovskaya, Maria A. 1972. "Multiscale modeling strategies for chemical vapor deposition." Thesis, Massachusetts Institute of Technology, 2002. http://hdl.handle.net/1721.1/8500.

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Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Chemical Engineering, 2002.<br>Includes bibliographical references.<br>In order to predict the quality of the fabricated devices as a function of growth conditions in chemical vapor deposition (CVD) reactors, a model should describe multiple time and length scales. These scales include the reactor scale ([approx]0.1-1 m), the feature scale ([approx.]0.1-100 [mu]m), and the atomistic morphology evolution scale ([approx.]10 nm). At present, good reactor and feature scale models are available. However, the linking between them has be

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17

Martin, Tyler Philip 1977. "Chemical vapor deposition of antimicrobial polymer coatings." Thesis, Massachusetts Institute of Technology, 2007. http://hdl.handle.net/1721.1/38968.

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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Chemical Engineering, 2007.<br>Includes bibliographical references.<br>There is large and growing interest in making a wide variety of materials and surfaces antimicrobial. Initiated chemical vapor deposition (iCVD), a solventless low-temperature process, is used to form thin films of polymers on fragile substrates. To improve research efficiency, a new combinatorial iCVD system was fabricated and used to efficiently determine the deposition kinetics for two new polymeric thin films, poly(diethylaminoethylacrylate) (PDEAEA) and p

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18

Olsson, Ylva Kristina. "Chemical vapor deposition of functionalized isobenzofuran polymers." Thesis, Massachusetts Institute of Technology, 2007. http://hdl.handle.net/1721.1/38584.

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Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2007.<br>Includes bibliographical references (leaves 47-48).<br>This thesis develops a platform for deposition of polymer thin films that can be further tailored by chemical surface modification. First, we explore chemical vapor deposition of functionalized isobenzofuran films using two different functional groups: pentafluorophenolate ester and alkyne. Both functional groups can be further modified using either ester substitution or click chemistry, respectively. The resulting thin films are char

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19

Danielsson, Örjan. "Simulations of Silicon Carbide Chemical Vapor Deposition." Doctoral thesis, Linköpings universitet, Halvledarmaterial, 2002. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-104594.

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Most of the modern electronics technology is based on the semiconducting material silicon. The increasing demands for smaller electronic devices with improved performance at lower costs drive the conventional silicon technology to its limits. To meet the requirements from the industry and to explore new application areas, other materials and fabrication methods must be used. For devices operating at high powers, high temperatures and high frequencies, the so-called wide bandgap semiconductors can be used with great success. Silicon carbide (SiC) and III-nitrides are wide bandgap materials that

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20

Sanwick, Alexis. "Heteroatom-Doped Chemical Vapor Deposition Carbon Ultramicroelectrodes." Digital Commons @ East Tennessee State University, 2020. https://dc.etsu.edu/honors/592.

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Metal nanoparticles have been a primary focus in areas of catalysis and electrocatalysis applications as a result of their large surface area-to-volume ratios. While there is an increased interest in understanding the properties and behaviors of metal nanoparticles, they can become expensive over time. Recent research has incorporated the idea of using heteroatom-doped materials as a cheaper catalytic alternative to metal nanoparticles. In this study nitrogen-doping and phosphorous-doping techniques were applied to chemical vapor-deposited carbon ultramicroelectrodes in order to study the elec

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21

Ayhan, Umut Baris. "Production Of Carbon Nanotubes By Chemical Vapor Deposition." Master's thesis, METU, 2004. http://etd.lib.metu.edu.tr/upload/12605199/index.pdf.

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ABSTRACT PRODUCTION OF CARBON NANOTUBES BY CHEMICAL VAPOR DEPOSITION Ayhan, Umut BariS M.S., Department of Chemical Engineering Supervisor: Prof. Dr. G&uuml<br>ng&ouml<br>r G&uuml<br>nd&uuml<br>z Co-Supervisor: Assoc. Prof. Dr. Burhanettin &Ccedil<br>i&ccedil<br>ek July 2004, 75 pages Carbon nanotubes, which is one of the most attractive research subject for scientists, was synthesized by two different methods: Chemical vapor deposition (CVD), a known method for nanotube growth, and electron beam (e-beam), a new method which was used for the first time for the catalytic growth of car

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22

Lee, Woo Young. "Chemical vapor deposition of dispersed phase ceramic composites." Diss., Georgia Institute of Technology, 1990. http://hdl.handle.net/1853/11857.

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23

Amaya, John. "Numerical study of combustion chemical vapor deposition processes." Thesis, Georgia Institute of Technology, 2000. http://hdl.handle.net/1853/12991.

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24

Book, Gregory W. "Aerosol size effects in combustion chemical vapor deposition." Diss., Georgia Institute of Technology, 1996. http://hdl.handle.net/1853/20501.

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25

Hunt, Andrew J. "Combustion chemical vapor deposition from liquid organic solutions." Diss., Georgia Institute of Technology, 1993. http://hdl.handle.net/1853/16836.

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26

Liu, Yuh-Shiuan. "Ultraviolet emitters grown by metalorganic chemical vapor deposition." Thesis, Georgia Institute of Technology, 2013. http://hdl.handle.net/1853/50415.

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This thesis presents the development of III-nitride materials for deep-ultraviolet (DUV) light emitting devices. The goal of this research is to develop a DUV laser diode (LD) operating at room temperature. Epitaxial structures for these devices are grown by metalorganic chemical vapor deposition (MOCVD) and several material analysis techniques were employed to characterize these structures such as atomic force microscopy, electroluminescence, Hall-effect measurement, photoluminescence, secondary ion mass spectrometry, transmission electron microscopy, transmission line measurement, and X-ray

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27

Trujillo, Nathan J. (Nathan Jeffrey). "Environmentally focused patterning and processing of polymer thin films by initiated chemical vapor deposition (iCVD) and oxidative chemical vapor deposition (oCVD)." Thesis, Massachusetts Institute of Technology, 2010. http://hdl.handle.net/1721.1/62139.

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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Chemical Engineering, 2010.<br>Cataloged from PDF version of thesis.<br>Includes bibliographical references.<br>The new millennium has brought fourth many technological innovations made possible by the advancement of high speed integrated circuits. The materials and energy requirements for a microchip is orders of magnitude higher than that of "traditional" goods, and current materials management requirements for EHS friendly low-k processing require a 10% annual increase in raw materials utilization. Initiated Chemical Vapor Dep

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28

Cheek, Roger W. (Roger Warren). "Selectivity Failure in the Chemical Vapor Deposition of Tungsten." Thesis, University of North Texas, 1994. https://digital.library.unt.edu/ark:/67531/metadc277954/.

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Tungsten metal is used as an electrical conductor in many modern microelectronic devices. One of the primary motivations for its use is that it can be deposited in thin films by chemical vapor deposition (CVD). CVD is a process whereby a thin film is deposited on a solid substrate by the reaction of a gas-phase molecular precursor. In the case of tungsten chemical vapor deposition (W-CVD) this precursor is commonly tungsten hexafluoride (WF6) which reacts with an appropriate reductant to yield metallic tungsten. A useful characteristic of the W-CVD chemical reactions is that while they proceed

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29

Beaulieu, David Cartier. "Electron Beam Chemical Vapor Deposition of Platinum and Carbon." Thesis, Georgia Institute of Technology, 2005. http://hdl.handle.net/1853/6990.

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Electron Beam Chemical Vapor Deposition (EBCVD) is a process by which an electron beam is used to decompose adsorbed reagent molecules to produce a deposit. The primary electrons from the beam, and especially the secondary electrons emitted from the substrate, dissociate the adsorbed molecules. Important factors for the deposition process include the beam parameters and reagent gas composition. Simple structures are fabricated through utilization of the various scanning modes of an SEM. Fibers (pillar-like structures) can be deposited, and lines (wall-like structures) can be deposited easi

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30

Choo, Jae-Ouk. "Development of a spatially Controllable Chemical Vapor Deposition System." College Park, Md. : University of Maryland, 2004. http://hdl.handle.net/1903/2345.

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Thesis (Ph. D.) -- University of Maryland, College Park, 2005.<br>Thesis research directed by: Chemical Engineering. Title from t.p. of PDF. Includes bibliographical references. Published by UMI Dissertation Services, Ann Arbor, Mich. Also available in paper.

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31

Mount, Mason B. "Chemical vapor deposition on a filament in a cylinder." Ohio : Ohio University, 1989. http://www.ohiolink.edu/etd/view.cgi?ohiou1182459287.

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32

Chotsuwan, Chuleekorn. "Organometallic precursors for the chemical vapor deposition of LaB₆." [Gainesville, Fla.] : University of Florida, 2004. http://purl.fcla.edu/fcla/etd/UFE0005023.

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33

Freeman, Mathieu Jon. "Synthesizing diamond films from low pressure chemical vapor deposition /." Online version of thesis, 1990. http://hdl.handle.net/1850/11262.

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34

Zhang, Feng. "Chemical Vapor Deposition of Silanes and Patterning on Silicon." BYU ScholarsArchive, 2010. https://scholarsarchive.byu.edu/etd/2902.

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Self assembled monolayers (SAMs) are widely used for surface modification. Alkylsilane monolayers are one of the most widely deposited and studied SAMs. My work focuses on the preparation, patterning, and application of alkysilane monolayers. 3-aminopropyltriethoxysilane (APTES) is one of the most popular silanes used to make active surfaces for surface modification. To possibly improve the surface physical properties and increase options for processing this material, I prepared and studied a series of amino silane surfaces on silicon/silicon dioxide from APTES and two other related silanes by

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35

Mao, Yu 1975. "Initiated chemical vapor deposition of functional polyacrylic thin films." Thesis, Massachusetts Institute of Technology, 2005. http://hdl.handle.net/1721.1/33608.

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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Materials Science and Engineering, 2005.<br>Includes bibliographical references.<br>Initiated chemical vapor deposition (iCVD) was explored as a novel method for synthesis of functional polyacrylic thin films. The process introduces a peroxide initiator, which can be decomposed at low temperatures (<200⁰C) and initialize addition reaction of monomer species. The use of low temperatures limits the decomposition chemistry to the bond scission of initiator, while retaining functional groups of monomers, which has been confirmed in t

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36

Lee, Long Hua. "Air-gap sacrificial materials by initiated chemical vapor deposition." Thesis, Massachusetts Institute of Technology, 2007. http://hdl.handle.net/1721.1/44292.

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Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Chemical Engineering, 2007.<br>Includes bibliographical references (leaves 81-83).<br>P(neopentyl methacrylate-co-ethylene glycol dimethacrylate) copolymer, abbreviated as P(npMAco-EGDA), was selected as the potential air-gap sacrificial material among possible combination of twenty monomers and four crosslinkers. P(npMA-co-EGDA) was deposited onto substrates using initiated chemical vapor deposition (iCVD) technique. Spectroscopic data showed the effective incorporation of both components in the copolymer and the integrity of repe

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37

Rodgers, Seth Thomas 1970. "Multiscale modeling of chemical vapor deposition and plasma etching." Thesis, Massachusetts Institute of Technology, 2000. http://hdl.handle.net/1721.1/28219.

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Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Chemical Engineering, 2000.<br>Includes bibliographical references.<br>In this work, a framework and a set of modeling tools capable of describing systems with key processes occurring on widely separated length and time scales has been developed. The major focus of this work is linking atomistic and continuum descriptions of gas phase transport. This problem is of considerable practical interest, as most etching and CVD processes are run at low pressures ~ 1 torr or less. Under these conditions, the continuum diffusion models used

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38

Patnaik, Sanjay. "Modelling of transport processes in chemical vapor deposition reactors." Thesis, Massachusetts Institute of Technology, 1989. http://hdl.handle.net/1721.1/14192.

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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Chemical Engineering, 1989.<br>Science hard copy bound in 2 v.<br>Includes bibliographical references (leaves 316-328).<br>by Sanjay Patnaik.<br>Ph.D.

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39

Cunha, Thiago Henrique Rodrigues da. "Chemical vapor deposition of graphene at very low pressures." Universidade Federal de Minas Gerais, 2014. http://hdl.handle.net/1843/BUBD-9WFHSS.

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The chemical vapor deposition (CVD) of hydrocarbons appears as the most suitable graphene production method for large area applications such as flexible displays and photovoltaics. However, the CVD mechanisms have not been fully understood and therefore a complete control over the morphology of the produced sheets has yet to be achieved. In this thesis we report a systematic investigation of graphene CVD at very low pressures performed on a cold wall reactor using copper substrates. A combination of scanning electron microscopy images and Raman spectroscopy measurements had demonstrated that t

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40

Garman, Paul Douglas. "Chemical Vapor Deposition of Silicon Oxycarbide Catalyzed Graphene Networks." The Ohio State University, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=osu1523898208600691.

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41

Anttila-Eriksson, Mikael. "Electrical Characterizationon Commercially Available Chemical Vapor Deposition (CVD) Graphene." Thesis, Uppsala universitet, Tillämpad materialvetenskap, 2016. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-298357.

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Field-effect transistors (FET) based on graphene as channel has extraordinaryproperties in terms of charge mobility, charge carrier density etc. However, there aremany challenges to graphene based FET due to the fact graphene is a monolayer ofatoms in 2-dimentional space that is strongly influenced by the operating conditions.One issue is that the Dirac point, or K-point, shifts to higher gate voltage whengraphene is exposed to atmosphere. In this study graphene field-effect transistors(GFET) based on commercially available CVD graphene are electrically characterizedthrough field effect gated

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42

Nuesca, Guillermo M. "Surface and Interfacial Studies of Metal-Organic Chemical Vapor Deposition of Copper." Thesis, University of North Texas, 1997. https://digital.library.unt.edu/ark:/67531/metadc278058/.

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The nucleation and successful growth of copper (Cu) thin films on diffusion barrier/adhesion promoter substrates during metal-organic chemical vapor deposition (MOCVD) are strongly dependent on the initial Cu precursor-substrate chemistry and surface conditions such as organic contamination and oxidation. This research focuses on the interactions of bis(1,1,1,5,5,5-hexafluoroacetylacetonato)copper(II), [Cu(hfac)2], with polycrystalline tantalum (Ta) and polycrystalline as well as epitaxial titanium nitride (TiN) substrates during Cu MOCVD, under ultra-high vacuum (UHV) conditions and low subst

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43

Chien, Chang-Yin, and 簡彰胤. "Ceramic Membrane Modified via Chemical Vapor Deposition and its Characterization." Thesis, 2002. http://ndltd.ncl.edu.tw/handle/55176972213700989637.

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碩士<br>國立臺灣大學<br>化學工程學研究所<br>90<br>The objective of this study is to reduce pore size of tubular alumina membrane under 2nm using TEOS via chemical vapor deposition (CVD) route. Consequently, we can promote the applications and increase the value of tubular alumina membrane from Chung-Shan Institute of Science and Technology (CSIST). The system assembly、gas permeability、CVD reaction, and character -rization of SiO2 membrane are included in this work. Tubular alumina membranes from CSIST consist of two kind of pore sizes, 0.02μm and 0.006μm. The permeabilities of pore size 0.02μm clea

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44

Keng, Ming-Chun, and 耿明雋. "Study of zwitterionic molecule-modified functional chemical vapor deposition surfaces for anti-cell adhesion." Thesis, 2013. http://ndltd.ncl.edu.tw/handle/26773373445015953886.

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碩士<br>國立臺灣大學<br>化學工程學研究所<br>101<br>Nonfouling surface has been widely used in biomaterials and biosensors due to its potential resistance in non-specific adsorption and cell adhesion. In the first part of this study, first we modified substrate surface by the chemical vapor deposition (CVD) technology. Second , we synthesized the zwitterion sulfobetaine & carboxybetaine monomers, using the corresponding functional group grafting to the CVD coated surface change the character of surface to resisting bio adhesion. In this study, we investigated the surface influence between the concentration of

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Wang, Bang-Min, and 王邦民. "Improved quality of nonpolar ZnO epitaxial film on modified LiGaO2 substrate by chemical vapor deposition." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/14018045256846248130.

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碩士<br>國立中山大學<br>材料與光電科學學系研究所<br>100<br>In this work, Nitridated b-LiGaO2 substrates have been used to grow nonpolar a-plane ZnO epitaxial films by a homemade thermal chemical vapor deposition. We control the quality of the films by adjusting the deposition position, growth temperature and oxygen partial pressure. The properties of the ZnO films was investigated by x-ray diffraction(XRD), scanning electron microscopy(SEM), atomic force microscopy(AFM), photoluminescence spectra(PL), Raman spectra(Raman) and transmission electron microscopy(TEM). The results show that the crystal quality, surfac

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Yeh, Yi-Hua, and 葉益華. "Fabrication of CNTs/TiO2 Nanocomposite via Modified Chemical Vapor Deposition Method for Acetone Removal from Air Sterams." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/02312369372250988765.

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碩士<br>國立中興大學<br>環境工程學系所<br>96<br>In this study student try to combine the advantage of carbon nanotubes (CNTs) and titanium dioxide (TiO2) by chemical vapor deposition (CVD)and to obtain the optimum nanophotocatalyst composite preparation procedure. And to study the characterization properties of nanocomposites with various CNTs containing ratios of 0~50%.From the transmission electron microscopy (TEM) images displayed that the TiO2 particles were uniformly coated on the CNTs surface and the CNTs appear in the composite can make the TiO2 particles well disperse. The X-ray diffraction (XRD) ana

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Chen, Wei Yu, and 陳威佑. "Growth of 3C-SiC on Si(100) by low pressure chemical vapor deposition using a modified four-step process." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/80653599813841142625.

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博士<br>國立清華大學<br>材料科學工程學系<br>98<br>本篇論文係利用四階段成長法，在低壓化學氣相沉積系統成長無孔洞立方晶形碳化矽，並探討不同反應氣體(矽甲烷-丙烷-氫氣與矽甲烷-甲烷-氫氣)在矽基板上成長立方晶型碳化矽的差異。四階段成長法省略了傳統三階段成長法中降溫的步驟，並在碳化步驟後新增一擴散改質步驟。在矽甲烷-丙烷-氫氣反應氣體系統中，實驗結果顯示，碳化緩衝層經過30分鐘1350 oC的擴散改質之後，能有效地提升表面的碳矽鍵結生成。經由X光繞射及穿透式電子繞射分析結果指出，在改質後碳化緩衝層上能成長出無孔洞的高品質的立方晶型碳化矽薄膜。在電性方面，藉由霍爾效應量測可知，四階段製程成長的碳化薄膜為n型半導體，在經過擴散改質後，碳化矽薄膜的霍爾遷移率可從320 cm2/(V s) 提升至395 cm2/(V s)，載子濃度也從1.6 × 1017 cm-3提升至2.7 × 1017 cm-3。擴散改質步驟中的溫度及時間對碳化緩衝層中原子排列及表面鍵結變化的效應也被深入的探討。根據X光光電子能譜儀的分析結果，在未經擴散改質前，緩衝層中只有部分的碳矽鍵結形成，碳碳鍵結和碳矽鍵結的比例約為7:3。經過7分鐘1300oC或是5分鐘1350 oC的擴散改質後，可將碳碳鍵結和碳矽鍵結的比例降低至1:9。表面鍵結比例的變化說明了擴散改質步驟能有效提升緩衝層表面碳矽鍵結並且影響後

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48

Liu, Kou-Liang, and 劉國良. "Electro-catalyzed Chemical Vapor Deposition." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/58370796945447288842.

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碩士<br>國立臺灣科技大學<br>化學工程系<br>93<br>Abstract This study investigated a novel electro-catalyzed chemical vapor deposition (CVD) technique for the growth of copper thin films on TaNx/Si substrates using (hfac)Cu(COD) as the precursor. Without supplying direct current, copper films that deposited on TaNx/Si were loose and rough. As a result, this copper film can’t be used as a seed layer. Due to the fact that the disproportionation reaction occurred during CVD involves electron exchange through the substrate, we proposed a new idea of electro-catalyzed Cu-CVD technique by supplying direct current t

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Kamel, John K. "Chemical vapor deposition/chemical vapor infiltration of pyrocarbon in porous carbon." 2007. http://etd.nd.edu/ETD-db/theses/available/etd-09222007-022308/.

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Thesis (Ph. D.)--University of Notre Dame, 2007.<br>Thesis directed by Samuel Paolucci for the Department of Aerospace amd Mechanical Engineering. "September 2007." Includes bibliographical references (leaves 213-239).

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50

Shyu, Yih-Ming, and 徐逸明. "Low Temperature Growth of Carbon Nanotubes by Chemical Vapor Deposition and Plasma Assisted Chemical Vapor Deposition." Thesis, 2001. http://ndltd.ncl.edu.tw/handle/43455215312083945152.

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博士<br>國立成功大學<br>化學工程學系<br>90<br>The growth of carbon nanotubes at low temperature was studied by thermal chemical vapor deposition and plasma chemical vapor deposition methods. By thermal chemical vapor deposition method, carbon nanotubes could be synthesized from 400 to 700℃at 90Torr with catalysts using acetylene or carbon monoxide reactant. Well-aligned carbon nanotubes with defects and strain could be grown at 400℃. The strain of the nanotubes could be released with less defects when reaction temperature rose about 500℃. However, the well alignment disappeared due to the low

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