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Journal articles on the topic 'Modules IGBT'

Author: Grafiati

Published: 4 June 2021

Last updated: 18 February 2022

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1

Flores, David, Salvador Hidalgo, and Jesús Urresti. "New generation of 3.3kV IGBTs with monolitically integrated voltage and current sensors." Facta universitatis - series: Electronics and Energetics 28, no. 2 (2015): 213–21. http://dx.doi.org/10.2298/fuee1502213f.

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Although IGBT modules are widely used as power semiconductor switch in many high power applications, there are still reliability problems related to the current unbalance between paralleled IGBTs that may destroy the whole module and, eventually, the power system. Indeed, short-circuit and overvoltage events can also destroy some of the IGBTs of the power module. In this sense, the instantaneous monitoring of the anode current and voltage values and the use of a more intelligent gate driver able to work with the signals of each particular IGBT of the module would enhance its operating lifetime. In this sense, the paper describes the design, optimization, fabrication and basic performances of 3.3kV-50A punch-through IGBTs for traction and tap changer applications where anode current and voltage sensors are monolithically integrated within the IGBT core.

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2

Jo, Kim, Cho, and Lee. "Development of a Hardware Simulator for Reliable Design of Modular Multilevel Converters Based on Junction-Temperature of IGBT Modules." Electronics 8, no. 10 (2019): 1127. http://dx.doi.org/10.3390/electronics8101127.

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This paper presents the development of a hardware simulator based on the junction-temperature of insulated-gate bipolar transistor (IGBT) modules in modular multilevel converters (MMCs). The MMC consists of various power-electronics components, and the IGBT is the main factor determining the lifetime of the MMC. The failure of IGBTs is mostly due to the junction-temperature swing; thus, the thermal profile of the IGBT should be established to predict the lifetime. The thermal behavior depends on the current flowing to the IGBT, and the load-current profile is related to the application. To establish the thermal profile of the IGBT, the proposed hardware simulator generates various shapes of output currents while the junction temperature is measured. Additionally, a controller design is presented for simulation of the arm current, which includes a direct current component as well as an alternative current component with a fundamental frequency. The validity and performance of the proposed hardware simulator and its control methods are analyzed according to various experimental results.

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3

Fu, Xiao Jin, Chun Lan Que, Shuai Zhang, En Xing Yang, and Hang Ye. "The Design of Parallel IGBT Modular for Modularized Wind Power Converter." Applied Mechanics and Materials 734 (February 2015): 873–76. http://dx.doi.org/10.4028/www.scientific.net/amm.734.873.

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Aiming at meeting the requirement of modularization for megawatt wind power converter, the paralleling structure of IGBT modules was designed. Fast transient response and current sharing capabilities of the paralleled IGBT modules were regarded as the main research object, the drive circuit and adapter plate was also designed. utilizing the new type of protection circuit on the adapter plate to ensure reliability of the paralleled IGBT modules. As one of the most promising technologies, Digital drive technology was applied as the conception of the driver, and the core of the driver is FPGA and A/D sampling circuit. Using digital driver had the advantages of good consistency pulse parameters, flexible software programming and high anti-jamming ability. The current equalization among the IGBT modules was verified by means of the field test. Based on the experiment, the characteristics of balancing parallel IGBTs' currents were better than previous designs. It is concluded that the whole design of the system was reasonable and can meet the demands of the engineering applications.<b></b>

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4

Wang, Yan Gang, Dinesh Chamund, Shi Ping Li, Kevin Wu, Steve Jones, and Gary Liu. "Lifetime Prediction for Power IGBT Modules in Metro Traction Systems." Advanced Materials Research 846-847 (November 2013): 724–31. http://dx.doi.org/10.4028/www.scientific.net/amr.846-847.724.

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In this work, the methodology and procedures of lifetime prediction for power IGBT modules are presented. Firstly, we discuss the long term reliability tests of power modules for developing lifetime models, and review some reported lifetime models. Then, the procedures of lifetime prediction in real applications are addressed, which include power loss calculations based on the actual mission profile, the conversion of power loss profile to temperature profile according to the module's thermal properties, the temperature cycles counting by Rainflow algorithm, and lifetime calculation by the fatigue linear accumulation damage theory. Finally, the lifetime of a 3300V/800A IGBT module manufactured by Dynex Semiconductor of China Southern Railway applied in metro traction systems is predicted.

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5

Kong, Qingyi, Mingxing Du, Ziwei Ouyang, Kexin Wei, and William Gerard Hurley. "A Method to Monitor IGBT Module Bond Wire Failure Using On-State Voltage Separation Strategy." Energies 12, no. 9 (2019): 1791. http://dx.doi.org/10.3390/en12091791.

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On-state voltage is an important thermal parameter for insulated gate bipolar transistor (IGBT) modules. It is employed widely to predict failure in IGBT module bond wires. However, due to restrictions in work environments and measurement methods, it is difficult to ensure the measurement accuracy for the on-state voltage under practical working conditions. To address this problem, an on-state voltage separation strategy is proposed for the IGBT modules with respect to the influence of collector current (Ic) and junction temperature (Tj). This method involves the separation of the on-state voltage into a dependent part and two independent parts during the IGBT module bond wire prediction. Based on the proposed separation strategy, the independent parts in the failure prediction can be removed, making it possible to directly monitor the voltage variations caused by bond wire failure. The experimental results demonstrate that the proposed diagnosis strategy can accurately predict the bond wire failure stage in an IGBT module under different conditions.

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6

Liu, Xingliang, Guiyun Tian, Yu Chen, Haoze Luo, Jian Zhang, and Wuhua Li. "Non-Contact Degradation Evaluation for IGBT Modules Using Eddy Current Pulsed Thermography Approach." Energies 13, no. 10 (2020): 2613. http://dx.doi.org/10.3390/en13102613.

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In this paper, a non-contact degradation evaluation method for insulated gate bipolar transistor (IGBT) modules is proposed based on eddy current pulsed thermography approach. In non-contact heat excitation procedures, a high-power induction heater is introduced to generate heat excitation in IGBT modules. The thermographs of the whole temperature mapping are recorded non-invasively by an IR camera. As a result, the joint degradation of IGBT modules can be evaluated by the transient thermal response curves derived from the recorded thermographs. Firstly, the non-destructive evaluation principle of the eddy current pulsed thermography (ECPT) system for an IGBT module with a heat sink is introduced. A 3D simulation module is built with physical parameters in ANSYS simulations, and then thermal propagation behavior considering the degradation impact is investigated. An experimental ECPT system is set up to verify the effectiveness of the proposed method. The experimental results show that the delay time to peak temperature can be extracted and treated as an effective indicative feature of joint degradation.

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7

Wu, Yi Bo, Guo You Liu, Ning Hua Xu, and Ze Chun Dou. "Thermal Resistance Analysis and Simulation of IGBT Module with High Power Density." Applied Mechanics and Materials 303-306 (February 2013): 1902–7. http://dx.doi.org/10.4028/www.scientific.net/amm.303-306.1902.

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As the IGBT power modules have promising potentials in the application of the field of traction or new energy, the higher power density and higher current rating of the IGBT module become more and more attractive. Thermal resistance is one of the most important characteristics in the application of power semiconductor module. A new 1500A/3300V IGBT module in traction application is developed successfully by Zhuzhou CSR Times Electric Co., Ltd (Lincoln). Thermal resistance management of this IGBT module with high power density is performed in this paper. Based on thermal nodes network, an equivalent circuit model for thermal resistance of power module is highlighted from which the steady state thermal resistance can be optimized by theoretical analysis. Furthermore, thermal numerical simulation of 1500A/3300V IGBT module is accomplished by means of finite element model (FEM). Finally, the thermal equivalent model of the IGBT module is verified by simulation results.

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8

Zheng, Qing Yuan, Min You Chen, Bing Gao, and Nan Jiang. "Analysis of Transient Thermal Stress of IGBT Module Based on Electrical-Thermal-Mechanical Coupling Model." Advanced Materials Research 986-987 (July 2014): 823–27. http://dx.doi.org/10.4028/www.scientific.net/amr.986-987.823.

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Reliability of IGBT power module is one of the biggest concerns regarding wind power system, which generates the non-uniform distribution of temperature and thermal stress. The effects of non-uniform distribution will cause failure of IGBT module. Therefore, analysis of thermal mechanical stress distribution is crucially important for investigation of IGBT failure mechanism. This paper uses FEM method to establish an electrical-thermal mechanical coupling model of IGBT power module. Firstly, thermal stress distribution of solder layer is studied under power cycling. Then, the effects of initial failure of solder layer on the characteristic of IGBT module is investigated. Experimental results indicate that the strain energy density and inelastic strain are higher which will reduce reliability and lifetime of power modules.

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9

Levchuk, Svetlana, Monika Poebl, and Gerhard Mitic. "Diamond Composites for Power Electronics Application." Advanced Materials Research 59 (December 2008): 143–47. http://dx.doi.org/10.4028/www.scientific.net/amr.59.143.

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In view of power electronics applications, baseplates made from metal diamond composites have been manufactured and characterised. The surface contours of the baseplates were measured during thermal loads up to 180°C starting at room temperature with help of the TherMoiré technique. X-ray analysis investigation was performed to detect porosity and local inhomogeneities of the baseplates. Al- and Cu-based diamond composite baseplates were Ni-plated and used for manufacturing of 3.3 kV IGBT modules. The solder layer between AlN AMB (active metal brazing) substrates and baseplates was investigated by ultrasonic and X-Ray analyses. Thermal resistance of the manufactured IGBT modules was characterised and compared to that of IGBT modules with AlSiC or Cu baseplates. The influence of thermal cycling on the solder layer and thermal resistance of the manufactured module was investigated.

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10

Wang, Chenyuan, Yigang He, Chuankun Wang, Lie Li, and Xiaoxin Wu. "Multi-Chip IGBT Module Failure Monitoring Based on Module Transconductance with Temperature Calibration." Electronics 9, no. 10 (2020): 1559. http://dx.doi.org/10.3390/electronics9101559.

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The Insulated Gate Bipolar Transistor (IGBT) is the component with the highest failure rate in power converters, and its reliability is a critical issue in power electronics. IGBT module failure is largely caused by solder layer fatigue or bond wires fall-off. This paper proposes a multi-chip IGBT module failure monitoring method based on the module transconductance, which can accurately monitor IGBT module chip failures and bond wire failures. The paper first introduces the failure mechanism and module structure of the multi-chip IGBT module; then, it proposes a reliability model based on the module transconductance and analyzes the relationship between chip failure, bond wire failure, and the transmission characteristic curve of the IGBT module. Finally, the module transconductance under chip failure and bond wire failure is measured and calculated through simulation, and the temperature is calibrated, which can eliminate the influence of temperature on health monitoring. The results show that the method has a high sensitivity to chip failures and bond wire failures, can realize the failure monitoring of multi-chip IGBT modules, and is of great significance for improving the reliability of power converters.

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11

Skibinski, G., D. Braun, D. Kirschnik, and R. Lukaszewski. "Developments in Hybrid Si – SiC Power Modules." Materials Science Forum 527-529 (October 2006): 1141–47. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1141.

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This paper investigates utilization of silicon carbide (SiC) Schottky power diodes as inverter Free Wheel Diodes (FWD) in a commercially available standard Econopak module also packaged with latest generation low-loss IGBT silicon. Static and switching characteristics of SiC diodes over standard module operating temperature 25 0C to 125 0C (298 0K - 398 0K) are measured. Module Turn-on, Turn-off and conduction losses vs. frequency are calculated and measured for three phase motor drive operation. Measurements are compared to standard modules using all Silicon (Si) IGBT- diode. System benefits justifying the increased SiC diode cost, such as EMI reduction, increased efficiency, reduced magnetic filter volume and reduced cooling requirements at higher allowable switching frequencies is investigated.

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12

Blaabjerg, Frede, K. Pedersen John, and Ulrik Jaeger. "Characterization of New Generation IGBT-Modules." EPE Journal 4, no. 4 (1994): 11–18. http://dx.doi.org/10.1080/09398368.1994.11463350.

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13

Cova, P., M. Ciappa, G. Franceschini, P. Malberti, and F. Fantini. "Thermal characterization of IGBT power modules." Microelectronics Reliability 37, no. 10-11 (1997): 1731–34. http://dx.doi.org/10.1016/s0026-2714(97)00150-9.

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14

Hofer-Noser, P., and N. Karrer. "Monitoring of paralleled IGBT/diode modules." IEEE Transactions on Power Electronics 14, no. 3 (1999): 438–44. http://dx.doi.org/10.1109/63.761687.

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15

-Coquery, G. "Les modules IGBT de forte puissance." Revue de l'Electricité et de l'Electronique -, no. 09 (1998): 52. http://dx.doi.org/10.3845/ree.1998.101.

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16

Chokhawala, R. S., J. Catt, and B. R. Pelly. "Gate drive considerations for IGBT modules." IEEE Transactions on Industry Applications 31, no. 3 (1995): 603–11. http://dx.doi.org/10.1109/28.382122.

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17

Konrad, S., and I. Zverev. "Protection Concepts for Rugged IGBT Modules." EPE Journal 6, no. 3-4 (1996): 11–19. http://dx.doi.org/10.1080/09398368.1996.11463391.

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18

Krainyukov, Alexander, and Valery Kutev. "Employment Of IGBT-Transistors For Bipolar Impulsed Micro-Arc Oxidation." Transport and Telecommunication Journal 16, no. 3 (2015): 217–23. http://dx.doi.org/10.1515/ttj-2015-0020.

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Abstract The paper is devoted to the use of insulated gate bipolar transistors (IGBT) for the micro-arc oxidation (MAO) process. The technical requirements to the current switches of power supplies for the pulsed bipolar MAO technology have been developed. The research installation for investigating the IGBT commutation processes during the pulse anode-cathode oxidation has been constructed. The experiments have been performed with its help in order to estimate the possibility of using half-bridge IGBT-modules with different drivers. The research results of the commutation processes investigation for different IGBT half- bridge modules are presented.

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19

Zhou, Shengqi, Luowei Zhou, Suncheng Liu, Pengju Sun, Quanming Luo, and Junke Wu. "The Application of Approximate Entropy Theory in Defects Detecting of IGBT Module." Active and Passive Electronic Components 2012 (2012): 1–7. http://dx.doi.org/10.1155/2012/309789.

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Defect is one of the key factors in reducing the reliability of the insulated gate bipolar transistor (IGBT) module, so developing the diagnostic method for defects inside the IGBT module is an important measure to avoid catastrophic failure and improves the reliability of power electronic converters. For this reason, a novel diagnostic method based on the approximate entropy (ApEn) theory is presented in this paper, which can provide statistical diagnosis and allow the operator to replace defective IGBT modules timely. The proposed method is achieved by analyzing the cross ApEn of the gate voltages before and after the occurring of defects. Due to the local damage caused by aging, the intrinsic parasitic parameters of packaging materials or silicon chips inside the IGBT module such as parasitic inductances and capacitances may change over time, which will make remarkable variation in the gate voltage. That is to say the gate voltage is close coupled with the defects. Therefore, the variation is quantified and used as a precursor parameter to evaluate the health status of the IGBT module. Experimental results validate the correctness of the proposed method.

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20

Parker-Allotey, Nii Adotei, Dean P. Hamilton, Olayiwola Alatise, et al. "Improved Energy Efficiency Using an IGBT/SiC-Schottky Diode Pair." Materials Science Forum 717-720 (May 2012): 1147–50. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1147.

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This paper will demonstrate how the newer Silicon Carbide material semiconductor power devices can contribute to carbon emissions reduction and the speed of adoption of electric vehicles, including hybrids, by enabling significant increases in the driving range. Two IGBT inverter leg modules of identical power rating have been manufactured and tested. One module has silicon-carbide (SiC) Schottky diodes as anti-parallel diodes and the other silicon PiN diodes. The power modules have been tested and demonstrate the superior electrothermal performance of the SiC Schottky diode over the Si PiN diode leading to a reduction in the power module switching losses.

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21

Sharma, Yogesh, P. Mumby-Croft, L. Ngwendson, et al. "6.5 kV Si/SiC Hybrid Power Module Technology." Materials Science Forum 963 (July 2019): 859–63. http://dx.doi.org/10.4028/www.scientific.net/msf.963.859.

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Substituting Si diodes with SiC Schottky diodes in Si insulated gate bipolar transistor (IGBT) modules is beneficial, as it can reduce power losses in electrical systems significantly. The fast switching nature of the SiC diode will allow Si IGBTs to operate at their full high-switching-speed potential, which at present is not possible because of the Si diodes. In this work, the electrical test results for Si-IGBT/4HSiC-Schottky hybrid substrates (hybrid SiC substrates) are presented. Comparisons of the 6.5 kV Si and hybrid SiC at room temperature and high temperature have shown that the switching losses in hybrid SiC substrates are low as compared to those in Si substrates but necessary steps are required to mitigate the ringing observed in the output waveforms.

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22

Li, Bin, Ke Qing Xiong, Yi Sun, and Bing Qi. "Safety P-Cycle Protection Mechanism for Smart Power Device." Advanced Materials Research 804 (September 2013): 228–32. http://dx.doi.org/10.4028/www.scientific.net/amr.804.228.

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Power converter with full closed loop water cooling system, works not only use water cooling characteristics of high efficiency, but also the electricity, and reducing the volume to prevent contamination. In this paper, we proposed a novel p-cycle safety protection approach that can provide rapid cycling radiating, and can restore the status of power device. For power cabinet composition, IGBT power modules and reactors is primarary radiating components, in which IGBT power modules that used for water cooling solution is modeled as the cooled automobile engine cooling system using cycling design principle. Besides, machine side and the network side of the power module is installed in separate cabinet to improve the tightness of the entire cabinet, in order to resist sandstorms.

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23

Tournier, Dominique, Peter Waind, Phillippe Godignon, L. Coulbeck, José Millan, and Roger Bassett. "4.5 kV-8 A SiC-Schottky Diodes / Si-IGBT Modules." Materials Science Forum 527-529 (October 2006): 1163–66. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1163.

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Due to the significant achievements in SiC bulk material growth and in SiC device processing technology, this semiconductor has received a great interest for power devices, particularly for SiC high-voltage Schottky barrier rectifiers. The main difference to ultra fast Si pin diodes lies in the absence of reverse recovery charge in SiC SBDs. This paper reports on 4.5kV-8A SiC Schottky diodes / Si-IGBT modules. The Schottky termination design and the fabrication process gives a manufacturing yield of 40% for large area devices on standard starting material. Modules have been successfully assembled, containing Si-IGBTs and 4.5kV-SiC Schottky diodes and characterized in both static and dynamic regimes. The forward dc characteristics of the modules show an on-resistance of 33mohm.cm2 @ room temperatue (RT) and a very low reverse leakage current density (JR < 10 5A/cm2 @ 3.5kV). An experimental breakdown voltage higher than 4.7kV has been measured in the air on polyimide passivated devices. This value corresponds to a junction termination efficiency of at least 80% according to the epitaxial properties. These SiC SBDs are well suited for high voltage, medium current, high frequency switching aerospace applications, matching perfectly as freewheeling diodes with Si IGBTs.

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24

Boettcher, Lars, S. Karaszkiewicz, D. Manessis, and A. Ostmann. "Development of Embedded High Power Electronics Modules for Automotive Applications." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2013, DPC (2013): 001717–43. http://dx.doi.org/10.4071/2013dpc-wp35.

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The automotive industry has a strong demand for highly reliable and cost-efficient electronics. Especially the upcoming generations of hybrid cars and fully electrical vehicles need compact and efficient 400 V power modules. Within the engine compartment installation space is of major concern. Therefore small size and high integration level of the modules are needed. Conventionally IGBTs and diodes are soldered to DCB (Direct Copper Bond) ceramics substrates and their top contacts are connected by heavy Al wire bonds. These ceramic modules are vacuum soldered to water-cooled base plates. Embedding of power switches, and controller into compact modules using PCB (Printed Circuit Board) technologies offers the potential to further improve the thermal management by double-sided cooling and to reduce the thickness of the module. In the recently started “HI-LEVEL” (Integration of Power Electronics in in High Current PCBs for Electric Vehicle Application) project, partners from automotive, automotive supplier, material supplier, PCB manufacturer and research teamed up to develop the technology, components and materials to realize high power modules. The following topics of the development will be addressed in detail in this paper:Assemble of power dies (IGBT and diode) using new sinter die attach materials:The deployment of new no pressure, low temperature sinter paste for the assembly of the power dies is a mayor development goal. Here the development of a reliable process to realize a defect free bonding of large IGBT dies (up to 10x14mm2) is essentially. These pastes are applied by stencil printing or dispensing and the sintering will take place after die placement at temperatures of around 200 °C.Thick copper substrate technology:To handle the high switching current, suitable copper tracks in the PCB are required. The realization of such thick copper lines (up to 1mm thickness) requires advanced processing, compared to conventional multilayer PCB production. In this paper the essential development steps towards a 10 kW inverter module with embedded components will be described. The process steps and reliability investigations of the different interconnect levels will be described in detail.

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25

Zhang, Jingxuan, Hexu Sun, Zexian Sun, Yan Dong, and Weichao Dong. "Open-Circuit Fault Diagnosis of Wind Power Converter Using Variational Mode Decomposition, Trend Feature Analysis and Deep Belief Network." Applied Sciences 10, no. 6 (2020): 2146. http://dx.doi.org/10.3390/app10062146.

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The power converter is a significant device in a wind power system. The wind turbine will be shut down and off grid immediately with the occurrence of the insulated gate bipolar transistor (IGBT) module open-circuit fault of the power converter, which will seriously impact the stability of grid and even threaten personal safety. However, in the existing diagnosis strategies for the power converter there are few single and double IGBT module open-circuit fault diagnosis methods producing negative results, including erroneous judgment, omissive judgment and low accuracy. In this paper, a novel method to diagnose the single and double IGBT modules open-circuit faults of the permanent magnet synchronous generator (PMSG) wind turbine grid-side converter (GSC) is proposed: Primarily, by collecting the three-phase current varying with a wind speed of 22 states, including a normal state and 21 failure states of PMSG wind turbine GSC as the original signal data. Afterward, the original signal data are decomposed by using variational mode decomposition (VMD) to obtain the mode coefficient series, which are analyzed by the proposed method base on fault trend feature for extracting the trend feature vectors. Finally, the trend feature vectors are utilized as the input of the deep belief network (DBN) for decision-making and obtaining the classification results. The simulation and experimental results show that the proposed method can diagnose the single and double IGBT modules open-circuit faults of GSC, and the accuracy is higher than the benchmark models.

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26

Eschrich, Fred. "Protection of IGBT Modules in Inverter Circuits." EPE Journal 1, no. 1 (1991): 57–59. http://dx.doi.org/10.1080/09398368.1991.11463261.

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27

Busatto, G., C. Abbate, B. Abbate, and F. Iannuzzo. "IGBT modules robustness during turn-off commutation." Microelectronics Reliability 48, no. 8-9 (2008): 1435–39. http://dx.doi.org/10.1016/j.microrel.2008.07.027.

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28

Githiari, A. N., and P. R. Palmer. "Analysis of IGBT modules connected in series." IEE Proceedings - Circuits, Devices and Systems 145, no. 5 (1998): 354. http://dx.doi.org/10.1049/ip-cds:19982123.

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29

Park, C., M. J. Mauger, T. Damle, J. Huh, S. Steinhoff, and L. Graber. "Cryogenic Power Electronics: Press-Pack IGBT Modules." IOP Conference Series: Materials Science and Engineering 756 (June 30, 2020): 012009. http://dx.doi.org/10.1088/1757-899x/756/1/012009.

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30

Kluge, Andreas, Henry Gueldner, Thomas Trompa, and David Mory. "IGBT-based switching modules for laser applications." IEEE Transactions on Dielectrics and Electrical Insulation 22, no. 4 (2015): 1954–62. http://dx.doi.org/10.1109/tdei.2015.005056.

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31

Njawah Achiri, Humphrey Mokom, Vaclav Smidl, Zdenek Peroutka, and Lubos Streit. "Least Squares Method for Identification of IGBT Thermal Impedance Networks Using Direct Temperature Measurements." Energies 13, no. 14 (2020): 3749. http://dx.doi.org/10.3390/en13143749.

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State-of-the-art methods for determining thermal impedance networks for IGBT (Insulated Gate Bipolar Transistor) modules usually involves the establishment of the relationship between the measured transistor or diode voltage and temperature under homogenous temperature distribution across the IGBT module. The junction temperature is recomputed from the established voltage–temperature relationship and used in determining the thermal impedance network. This method requires accurate measurement of voltage drop across the transistors and diodes under specific designed heating and cooling profiles. Validation of the junction temperature is usually done using infrared camera or sensors placed close to the transistors or diodes (in some cases and open IGBT module) so that the measured temperature is as close to the junction as possible. In this paper, we propose an alternative method for determining the IGBT thermal impedance network using the principles of least squares. This method uses measured temperatures for defined heating and cooling cycles under different cooling conditions to determine the thermal impedance network. The results from the proposed method are compared with those obtained using state-of-the-art methods.

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32

Imaizumi, Masayuki, Yoichiro Tarui, Shin Ichi Kinouchi, et al. "Switching Characteristics of SiC-MOSFET and SBD Power Modules." Materials Science Forum 527-529 (October 2006): 1289–92. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1289.

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Prototype SiC power modules are fabricated using our class 10 A, 1.2 kV SiC-MOSFETs and SiC-SBDs, and their switching characteristics are evaluated using a double pulse method. Switching waveforms show that both overshoot and tail current, which induce power losses, are suppressed markedly compared with conventional Si-IGBT modules with similar ratings. The total switching loss (MOSFET turn-ON loss, turn-OFF loss and SBD recovery loss) of SiC power modules is measured to be about 30% of that of Si-IGBT modules under the generally-used switching condition (di/dt ~250A/μs). The three losses of SiC modules decrease monotonically with a decrease in gate resistance, namely switching speed. The result shows the potential of unipolar device SiC power modules.

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33

Yonezawa, Yoshiyuki, Tomonori Mizushima, Kensuke Takenaka, et al. "Device Performance and Switching Characteristics of 16 kV Ultrahigh-Voltage SiC Flip-Type n-Channel IE-IGBTs." Materials Science Forum 821-823 (June 2015): 842–46. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.842.

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Ultrahigh-voltage SiC flip-type n-channel implantation and epitaxial (IE)-IGBTs were developed, and the static and dynamic performance was investigated. A large device (8 mm × 8mm) with a blocking voltage greater than 16 kV was achieved, and an on-state current of 20 A was obtained at the low on-state voltage (Von) of 4.8 V. RonAdiff was 23 mΩ·cm2 at Von = 4.8 V. In order to evaluate the switching characteristics of the IE-IGBT, ultrahigh-voltage power modules were assembled. A chopper circuit configuration was used to evaluate the switching characteristics of the IE-IGBT. Smooth turn-off waveforms were successfully obtained at VCE = 6.5 kV and ICE = 60 A in the temperature range from room temperature to 250°C.

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34

Chang, Yao, Wuhua Li, Haoze Luo, et al. "A 3D Thermal Network Model for Monitoring Imbalanced Thermal Distribution of Press-Pack IGBT Modules in MMC-HVDC Applications." Energies 12, no. 7 (2019): 1319. http://dx.doi.org/10.3390/en12071319.

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In this paper, the impact of a double-sided press-pack insulated-gate-bipolar-transistor (PP IGBT) cooling structure on its thermal impedance distribution is studied and explored. A matrix thermal impedance network model is built by considering the multi-chip thermal coupling effect for the collector side of the PP IGBT. Moreover, a verification has been made by comparing the proposed matrix thermal network model and the conventional lumped RC network model provided by the manufacturer. It is concluded that the collector side has lower thermal resistance and dissipates about 88% of the heat generated by the IGBT chips inside the module. Then, a modular-multilevel-converter high-voltage-direct-current (MMC-HVDC)-based type test setup composed of the press-pack IGBT stacks is established and the junction temperature is calculated with the proposed thermal model and verified by temperature measurements.

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Kong, Qingyi, Mingxing Du, Ziwei Ouyang, Kexin Wei, and William Hurley. "A Model of the On-State Voltage across IGBT Modules Based on Physical Structure and Conduction Mechanisms." Energies 12, no. 5 (2019): 851. http://dx.doi.org/10.3390/en12050851.

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The on-state voltage is an important electrical parameter of insulated gate bipolar transistor (IGBT) modules. Due to limits in instrumentation and methods, it is difficult to ensure accurate measurements of the on-state voltage in practical working conditions. Based on the physical structure and conduction mechanism of the IGBT module, this paper models the on-state voltage and gives a detailed method for extracting the on-state voltage. Experiments not only demonstrate the feasibility of the on-state voltage separation method but also suggest a method for measuring and extracting the model parameters. Furthermore, on-state voltage measurements and simulation results certified the accuracy of this method.

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Zhu, Nan, Xingyao Zhang, Min Chen, Seiki Igarashi, Tatsuhiko Fujihira, and Dehong Xu. "Turn-On Oscillation Damping for Hybrid IGBT Modules." CPSS Transactions on Power Electronics and Applications 1, no. 1 (2016): 41–56. http://dx.doi.org/10.24295/cpsstpea.2016.00005.

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Schlegel, R., E. Herr, and F. Richter. "Reliability of non-hermetic pressure contact IGBT modules." Microelectronics Reliability 41, no. 9-10 (2001): 1689–94. http://dx.doi.org/10.1016/s0026-2714(01)00193-7.

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Abbate, Carmine, and Roberto Di Folco. "High Frequency Behavior of High Power IGBT Modules." Universal Journal of Electrical and Electronic Engineering 3, no. 1 (2015): 17–23. http://dx.doi.org/10.13189/ujeee.2015.030104.

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Azar, R., F. Udrea, M. DeSilva, et al. "Advanced SPICE Modeling of Large Power IGBT Modules." IEEE Transactions on Industry Applications 40, no. 3 (2004): 710–16. http://dx.doi.org/10.1109/tia.2004.827456.

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Chen, Ming, An Hu, Yong Tang, and Bo Wang. "SABER-Based Simulation for Compact Dynamic Electro-Thermal Modeling Analysis of Power Electronic Devices." Advanced Materials Research 291-294 (July 2011): 1704–8. http://dx.doi.org/10.4028/www.scientific.net/amr.291-294.1704.

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Power electronic modules including insulated gate bipolar transistor (IGBT) are widely used in the field of power converter application. The temperature distribution inside these modules becomes more important for electrical characteristics, reliability and lifetime of integrated power electronic modules. In this paper, a seven-layer compact RC thermal component network model based on the physical structure is presented. A dynamic electro-thermal model, which is composed of electrical model, compact RC thermal component network model and electro-thermal interface is developed for the IGBT. These models interact with each other to calculate the temperature of each layer of module and parameters of each model. The thermal model determines the evolution of the temperature distribution within the thermal network and thus determines the instantaneous junction temperature used by the electrical model. Such built dynamic electro-thermal simulation methodology is implemented in the Saber circuit simulator, and the simulation result is validated by the experimental study, which adopted with infrared thermal imaging camera. The built dynamic electro-thermal model could be helpful for the research on operation performance and heat sink design for such power electronic devices.

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BELYAEV, A. V., and R. N. POLYAKOV. "ANALYSIS OF THE RELIABLE STATE OF POWER ELECTRONICS BY CONTROL OF THERMAL ELECTRIC PARAMETERS." Fundamental and Applied Problems of Engineering and Technology 2 (2021): 172–77. http://dx.doi.org/10.33979/2073-7408-2021-346-2-172-177.

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The article discusses an approach to creating a simulation mathematical model of the operation of power IGBT modules for the subsequent analysis of data used to assess the operational state and determine the residual life. Methods for calculating the main controlled parameters are presented, modes of operation of IGBT devices as part of converter equipment are considered.

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Blinov, Andrei, Tanel Jalakas, Dmitri Vinnikov, and Kuno Janson. "Switch-Off Behaviour of 6.5 kV IGBT Modules in Two-Level Voltage Source Inverter." Scientific Journal of Riga Technical University. Power and Electrical Engineering 27, no. 1 (2010): 122–27. http://dx.doi.org/10.2478/v10144-010-0033-z.

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Switch-Off Behaviour of 6.5 kV IGBT Modules in Two-Level Voltage Source InverterThis paper presents an analysis of the switch-off process of 6.5 kV/200 A IGBT modules in a two-level half-bridge voltage source inverter. During experiments, it was stated that real switching process is far from ideal switch-off since parasitic inductance and capacitance in the circuit cause voltage spikes and high frequency oscillations during transition processes. Operation states of the inverter are described and analyzed. Experimental and simulation results are compared, the main transients are analyzed and mathematically expressed and possible problems and solutions are discussed.

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Denk, Marco, and Mark-M. Bakran. "Online Junction Temperature Cycle Recording of an IGBT Power Module in a Hybrid Car." Advances in Power Electronics 2015 (March 2, 2015): 1–14. http://dx.doi.org/10.1155/2015/652389.

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The accuracy of the lifetime calculation approach of IGBT power modules used in hybrid-electric powertrains suffers greatly from the inaccurate knowledge of application typical load-profiles. To verify the theoretical load-profiles with data from the field this paper presents a concept to record all junction temperature cycles of an IGBT power module during its operation in a test vehicle. For this purpose the IGBT junction temperature is measured with a modified gate driver that determines the temperature sensitive IGBT internal gate resistor by superimposing the negative gate voltage with a high-frequency identification signal. An integrated control unit manages the TJ measurement during the regular switching operation, the exchange of data with the system controller, and the automatic calibration of the sensor system. To calculate and store temperature cycles on a microcontroller an online Rainflow counting algorithm was developed. The special feature of this algorithm is a very accurate extraction of lifetime relevant information with a significantly reduced calculation and storage effort. Until now the recording concept could be realized and tested within a laboratory voltage source inverter. Currently the IGBT driver with integrated junction temperature measurement and the online cycle recording algorithm is integrated in the voltage source inverter of first test vehicles. Such research will provide representative load-profiles to verify and optimize the theoretical load-profiles used in today’s lifetime calculation.

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Luo, Bing Yang, Yi Min Mo, Wen Lu Zhang, and Si Ning Liu. "Study Temperature and Humidity Influence on High-Power IGBT." Applied Mechanics and Materials 325-326 (June 2013): 499–502. http://dx.doi.org/10.4028/www.scientific.net/amm.325-326.499.

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This paper has made a statistic survey on the failure rate of the appliance of high-power IGBT on the Harmonious locomotive. According to the analysis ,environmental temperature and humidity have a crucial influence on failure rate, thus a set of temperature and humidity monitoring system has been designed to investigate the environment temperature and humidity of high failure rate Four-quadrant IGBT modules, analyzing factors such as temperature and humidity and the working conditions accordingly, exploring the relationship of rising temperature of IGBT ,locomotive speed ,pressure of the air cylinder, setting a foundation for later analysis on the mechanism of troubles.

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Akherraz, M. "IGBT Based DC/DC Converter." Sultan Qaboos University Journal for Science [SQUJS] 2 (December 1, 1997): 49. http://dx.doi.org/10.24200/squjs.vol2iss0pp49-56.

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This paper presents an in-depth analytical and experimental investigation of an indirect DC-DC converter. The DC-AC conversion is a full bridge based on IGBT power modules, and the AC-DC conversion is done via a high frequency AC link and a first diode bridge. The AC link, which consists of snubbing capacitors and a variable air-gap transformer, is analytically designed to fulfill Zero Voltage commutation requirement. The proposed converter is simulated using PSPICE and a prototype is designed built and tested in the laboratory. PSPICE simulation and experimental results are presented and compared.

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Wang, Longjun, Jiayou Xu, Gang Wang, and Zheng Zhang. "Lifetime estimation of IGBT modules for MMC-HVDC application." Microelectronics Reliability 82 (March 2018): 90–99. http://dx.doi.org/10.1016/j.microrel.2018.01.009.

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Abbate, C., G. Busatto, L. Fratelli, F. Iannuzzo, B. Cascone, and R. Manzo. "The robustness of series-connected high power IGBT modules." Microelectronics Reliability 47, no. 9-11 (2007): 1746–50. http://dx.doi.org/10.1016/j.microrel.2007.07.036.

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Berg, H., and E. Wolfgang. "Advanced IGBT modules for railway traction applications: Reliability testing." Microelectronics Reliability 38, no. 6-8 (1998): 1319–23. http://dx.doi.org/10.1016/s0026-2714(98)00150-4.

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49

Ciappa, M., P. Malberti, W. Fichtner, P. Cova, L. Cattani, and F. Fantini. "Lifetime extrapolation for IGBT modules under realistic operation conditions." Microelectronics Reliability 39, no. 6-7 (1999): 1131–36. http://dx.doi.org/10.1016/s0026-2714(99)00160-2.

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Qian, Cheng, Amir Mirza Gheitaghy, Jiajie Fan, et al. "Thermal Management on IGBT Power Electronic Devices and Modules." IEEE Access 6 (2018): 12868–84. http://dx.doi.org/10.1109/access.2018.2793300.

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