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Journal articles on the topic 'Monolithic Microwave Integrated Circuit'

Author: Grafiati

Published: 4 June 2021

Last updated: 26 July 2025

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1

BAHL, INDER J. "MONOLITHIC MICROWAVE INTEGRATED CIRCUITS BASED ON GaAs MESFET TECHNOLOGY." International Journal of High Speed Electronics and Systems 06, no. 01 (1995): 91–124. http://dx.doi.org/10.1142/s0129156495000031.

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Advanced military microwave systems are demanding increased integration, reliability, radiation hardness, compact size and lower cost when produced in large volume, whereas the microwave commercial market, including wireless communications, mandates low cost circuits. Monolithic Microwave Integrated Circuit (MMIC) technology provides an economically viable approach to meeting these needs. In this paper the design considerations for several types of MMICs and their performance status are presented. Multi-function integrated circuits that advance the MMIC technology are described, including inte

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2

Nishikawa, Kenjiro, Ichihiko Toyoda, Kenji Kamogawa, Tsuneo Tokumitsu, and Masayoshi Tanaka. "Three-dimensional monolithic microwave integrated circuit technology for fully computer-aided design-compatible monolithic microwave integrated circuit development." International Journal of RF and Microwave Computer-Aided Engineering 8, no. 6 (1998): 498–506. http://dx.doi.org/10.1002/(sici)1099-047x(199811)8:6<498::aid-mmce9>3.0.co;2-e.

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3

Gaudreault, M., and M. G. Stubbs. "Lumped-element components for GaAs monolithic microwave integrated circuits." Canadian Journal of Physics 63, no. 6 (1985): 736–39. http://dx.doi.org/10.1139/p85-117.

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Gallium-arsenide monolithic microwave integrated circuits (GaAs MMIC's) promise the microwave circuit designer significant size, weight, and reliability advantages. Distributed and lumped matching techniques have been utilized previously in MMIC design with the latter offering greater bandwidth and smaller size. In this paper, experimental results for lumped interdigitated capacitors on a gallium-arsenide substrate are presented. Computer modelling in the frequency range 2–18 GHz was used to derive a set of design curves for these capacitors. These curves cover aspect ratios of w/s = 1 and w/s

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4

Kuznetsov, Vadim. "Microstrip Line Modeling Taking into Account Dispersion Using a General-Purpose SPICE Simulator." Journal of Low Power Electronics and Applications 15, no. 3 (2025): 42. https://doi.org/10.3390/jlpea15030042.

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XSPICE models for a generic transmission line, a microstrip line, and coupled microstrips are presented. The developed models extend general-purpose circuit simulation tools using RF circuits design features. The models could be used for circuit simulation in frequency, DC, and time domains for any active or passive RF or microwave schematic (including microwave monolithic integrated circuits—MMICs) involving transmission lines. The presented models could be used with any circuit simulation backend supporting XSPICE extensions and could be integrated without patching the core simulator code. T

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5

Yoo, Hyoungsuk, Se-Hee Lee, and Hongjoon Kim. "Broadband balun for monolithic microwave integrated circuit application." Microwave and Optical Technology Letters 54, no. 1 (2011): 203–6. http://dx.doi.org/10.1002/mop.26468.

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6

Poymalin, V. E., A. V. Buyankin, A. A. Nelin, L. E. Ragulina, and M. V. Ryzhakov. "Shielding Device for Microwave Electronic Components of a Multilayer Board for the AFAR Transceiver Module for Space Purposes." Rocket-space device engineering and information systems 8, no. 2 (2021): 82–87. http://dx.doi.org/10.30894/issn2409-0239.2021.8.2.82.87.

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A method of shielding the elements of a microwave module based on the principles of forming a Faraday cage, with different power and different frequency paths of the AFAR receiving-transmitting module, excluding their mutual electromagnetic influence, is presented. A description of the structure of a multilayer board and various structural elements is given, allowing to limit (screen) the signal in a small volume, commensurate with the size of a monolithic integrated circuit or a set of monolithic integrated circuits, isolating parasitic electromagnetic interference. Polyimide is considered as

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7

Wilson, K. "GaAs monolithic microwave integrated circuits." Electronics and Power 33, no. 4 (1987): 249. http://dx.doi.org/10.1049/ep.1987.0164.

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8

Khmara, Ioann V., Daniil S. Danilov, Vladimir N. Grebenyuk, Andrey S. Zagorodniy, and Sergey N. Sharangovich. "Ultra-Wideband pin-diode diplexer switch on GaAs." Proceedings of Tomsk State University of Control Systems and Radioelectronics 26, no. 3 (2023): 27–31. http://dx.doi.org/10.21293/1818-0442-2023-26-3-27-31.

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The article presents a circuit of an ultra-wideband pin-diode switch for two channels with different operating frequency ranges: DC-18 GHz and 18–26.5 GHz. A topology model of a microwave monolithic integrated circuit (MMIC) based on quasi-vertical GaAs pin diode technology of Miсran JSC is described. Comparison of simulation results and experimental measurement data of manufactured MMICs is performed. The use of the integrated circuit of the switch is possible as a part of the switching nodes of the measuring microwave equipment.

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9

Toscano, Alessandro, and Lucio Vegni. "Advanced Electromagnetic Modelling of Multilayer Monolithic Microwave Integrated Circuit." Journal of Computational Electronics 2, no. 2-4 (2003): 469–73. http://dx.doi.org/10.1023/b:jcel.0000011473.09805.10.

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10

Abe, M., T. Itoh, Y. Tamaura, Y. Gotoh, and M. Gomi. "Ferrite plating on GaAs for microwave monolithic integrated circuit." IEEE Transactions on Magnetics 23, no. 5 (1987): 3736–38. http://dx.doi.org/10.1109/tmag.1987.1065205.

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11

Wang, H., D. C. Yang, R. Esfandiari, T. Joseph, R. K. Ellis, and G. Ng. "A configurable integrated test methodology for monolithic microwave integrated circuit production." IEEE Transactions on Semiconductor Manufacturing 5, no. 3 (1992): 248–54. http://dx.doi.org/10.1109/66.149816.

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12

Robinson, Megan C., Zoya Popović, and Gregor Lasser. "Linear broadband interference suppression circuit based on GaN monolithic microwave integrated circuits." IET Circuits, Devices & Systems 17, no. 4 (2023): 213–24. http://dx.doi.org/10.1049/cds2.12159.

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13

Mittereder, Jeffrey A. "Backside Etching of GaAs Devices." Microscopy Today 5, no. 2 (1997): 18–19. http://dx.doi.org/10.1017/s1551929500060090.

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The following is a technique for analyzing the area underneath a GaAs integrated circuit or discrete device which may aid in failure analysis. This procedure has been used in the past by the microelectronics community, and it is reviewed here for GaAs monolithic microwave integrated circuits (MMICs) and discrete devices. Because it is a destructive method, we use it in our lab after all other testing is completed. The substrate thickness of the GaAs is ∼4 mils (25 μm).

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14

Metel, A. A., T. N. Fail, Y. A. Novichkova, I. M. Dobush, A. Е. Goryainov, and A. A. Kalentyev. "Automated design of a linear microwave monolithic distributed amplifier." Issues of radio electronics, no. 3 (June 25, 2021): 40–48. http://dx.doi.org/10.21778/2218-5453-2021-3-40-48.

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Microwave integrated circuit (IC) design tends to become more efficient and less expensive which leads to emerging the circuit topology and layout synthesis software. In the paper we present a technique and an algorithm for microwave distributed amplifier (DA) automated synthesis based on requirements to linear characteristics. The technique feature is the using of active and passive element’s models for a chosen IC process. This allow the technique to generate circuit topology which can be manufactured using a given IC process. The proposed DA automated design technique work was demonstrated

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15

Robertson, I. D., and A. H. Aghvami. "Novel coupler for gallium arsenide monolithic microwave integrated circuit applications." Electronics Letters 24, no. 25 (1988): 1577. http://dx.doi.org/10.1049/el:19881075.

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16

Shin, Low Wen, and Arjuna Marzuki . "5GHz MMIC LNA Design Using Particle Swarm Optimization." Information Management and Business Review 5, no. 6 (2013): 257–62. http://dx.doi.org/10.22610/imbr.v5i6.1050.

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This research presents an optimization study of a 5 GHz Monolithic Microwave Integrated Circuit (MMIC) design using Particle Swarm Optimization (PSO). MMIC Low Noise Amplifier (LNA) is a type of integrated circuit device used to capture signal operating in the microwave frequency. This project consists of two stages: implementation of PSO using MATLAB and simulation of MMIC design using Advanced Design System (ADS). PSO model that mimics the biological swarm behavior is developed to optimize the MMIC design variables in order to achieve the required circuit performance and specifications such

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17

Fadil, Dalal, Vikram Passi, Wei Wei, et al. "A Broadband Active Microwave Monolithically Integrated Circuit Balun in Graphene Technology." Applied Sciences 10, no. 6 (2020): 2183. http://dx.doi.org/10.3390/app10062183.

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This paper presents the first graphene radiofrequency (RF) monolithic integrated balun circuit. It is composed of four integrated graphene field effect transistors (GFETs). This innovative active balun concept takes advantage of the GFET ambipolar behavior. It is realized using an advanced silicon carbide (SiC) based bilayer graphene FET technology having RF performances of about 20 GHz. Balun circuit measurement demonstrates its high frequency capability. An upper limit of 6 GHz has been achieved when considering a phase difference lower than 10° and a magnitude of amplitude imbalance less th

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18

Lo, T. C., and H. C. Huang. "Anisotropic etching of deep trench for silicon monolithic microwave integrated circuit." Electronics Letters 29, no. 25 (1993): 2202. http://dx.doi.org/10.1049/el:19931479.

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19

Hwang, James C. M. "Lester Eastman and the Monolithic Microwave Integrated Circuit Technology [Speaker’s Corner]." IEEE Microwave Magazine 25, no. 6 (2024): 132–35. http://dx.doi.org/10.1109/mmm.2024.3379103.

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20

Pucel, Robert. "Looking Back at Monolithic Microwave Integrated Circuits." IEEE Microwave Magazine 13, no. 4 (2012): 62–76. http://dx.doi.org/10.1109/mmm.2012.2189032.

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21

Lucyszyn, S., A. H. Aghvami, I. D. Robertson, and C. Stewart. "Measurement techniques for monolithic microwave integrated circuits." Electronics & Communication Engineering Journal 6, no. 2 (1994): 69–76. http://dx.doi.org/10.1049/ecej:19940204.

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22

Gillick, M., A. H. Aghvami, and I. D. Robertson. "Uniplanar techniques for monolithic microwave integrated circuits." Electronics & Communication Engineering Journal 6, no. 4 (1994): 187–94. http://dx.doi.org/10.1049/ecej:19940402.

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23

Wang, De-bo, and Xiao-ping Liao. "A novel symmetrical microwave power sensor based on GaAs monolithic microwave integrated circuit technology." Journal of Micromechanics and Microengineering 19, no. 12 (2009): 125012. http://dx.doi.org/10.1088/0960-1317/19/12/125012.

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24

Roy, Langis, Malcolm G. Stubbs, and James S. Wight. "A GaAs monolithic amplifier with extremely low power consumption." Canadian Journal of Physics 69, no. 3-4 (1991): 177–79. http://dx.doi.org/10.1139/p91-028.

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The design and performance of a high-gain, monolithic, broadband amplifier with extremely low power consumption are described. The amplifier, fabricated using a 0.5 μm GaAs depletion-mode MESFET (metal semiconductor field effect transistor) process, utilizes very small gate width devices to achieve a measured gain of 19 dB and a 0.1 to 2.1 GHz bandwidth with only 63 mW dc power dissipation. This is the lowest power consumption broadband MMIC (monolithic microwave integrated circuit) reported to date and is intended for mobile radio applications.

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25

Powell, J. R., Colin Viegas, Hoshiar Singh Sanghera, P. G. Huggard, and Byron Alderman. "Comparing Novel MMIC and Hybrid Circuit High Efficiency GaAs Schottky Diode mm-Wave Frequency Doublers." Electronics 9, no. 10 (2020): 1718. http://dx.doi.org/10.3390/electronics9101718.

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A novel Schottky diode frequency doubler in E-band, using biased series-connected diodes in the output waveguide, is reported. The doubler was implemented using a GaAs Schottky Monolithic Microwave Integrated Circuit (MMIC) process with integrated capacitors and beam leads. A comparison is made with a hybrid doubler using a more conventional single-ended configuration with two discrete diodes in a planar transmission line circuit. Both devices exhibit excellent performance over the 67–78 GHz design bandwidth, with the novel MMIC design producing 25 to 55 mW at 12 to 22% power conversion effici

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26

Ooi, B. L., and M. S. Leong. "A Novel Course on Microwave Monolithic Integrated Circuit Design, Theory, and Characterization." IEEE Transactions on Education 47, no. 1 (2004): 134–40. http://dx.doi.org/10.1109/te.2003.822633.

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27

Zhiqiang Zhang and Xiaoping Liao. "Micromachined Passive Bandpass Filters Based on GaAs Monolithic-Microwave-Integrated-Circuit Technology." IEEE Transactions on Electron Devices 60, no. 1 (2013): 221–28. http://dx.doi.org/10.1109/ted.2012.2228197.

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28

Herbertz, K., and S. Lucyszyn. "Electromagnetic bandgap filter with single-cell monolithic microwave integrated circuit-tuneable defect." IET Microwaves, Antennas & Propagation 4, no. 8 (2010): 1123. http://dx.doi.org/10.1049/iet-map.2009.0593.

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29

Paine, B. M., R. C. Wong, A. E. Schmitz, et al. "Ka-band InP high electron mobility transistor monolithic microwave integrated circuit reliability." Microelectronics Reliability 41, no. 8 (2001): 1115–22. http://dx.doi.org/10.1016/s0026-2714(01)00083-x.

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30

Pavlidis, D., and M. Tutt. "A novel course on microwave monolithic integrated circuit (MMIC) theory and characterization." IEEE Transactions on Education 32, no. 2 (1989): 73–84. http://dx.doi.org/10.1109/13.28036.

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31

Funabashi, Masahiro, Keiichi Ohata, Kazuhiko Onda, et al. "Millimeter-wave AlGaAs/InGaAs heterojunction finite-element monolithic microwave integrated circuit oscillators." Electronics and Communications in Japan (Part II: Electronics) 78, no. 5 (1995): 49–56. http://dx.doi.org/10.1002/ecjb.4420780506.

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32

Dindo, S., R. North, and D. Madge. "A manufacturing process for gallium arsenide monolithic microwave integrated circuits." Canadian Journal of Physics 65, no. 8 (1987): 885–91. http://dx.doi.org/10.1139/p87-138.

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Over the last several years, Optotek has successfully developed the capability to design and process high-frequency x-band monolithic microwave integrated circuits. A process for fabricating active devices and passive elements is described. In addition, dc and microwave measurements are presented.

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33

Nosal, Zbigniew. "PHEMT transistor models for accurate CAD of MMIC amplifier." Journal of Telecommunications and Information Technology, no. 1 (March 30, 2002): 3–7. http://dx.doi.org/10.26636/jtit.2002.1.104.

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Accurate modeling of microwave monolithic integrated circuits (MMICs) is very desirable for the reason of high fabrication costs of GaAs circuits. Designers are trying to achieve the ``first trial success`` to lower costs and accelerate the introduction of new products. Mature and reliable technology and accurate models of circuit components - active devices in particular - are crucial for the achievement of economic goals. The D0AH process from the Philips Microwave Limeil (PML) foundry has proven to provide reliable and repeatable circuits, as our 4 year experience indicates. The models pres

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34

Temnov, A. M. "Hybrid Monolithic Microwave Integrated Circuits RF on Diamond." Nano- i Mikrosistemnaya Tehnika 22, no. 6 (2020): 298–328. http://dx.doi.org/10.17587/nmst.22.298-328.

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35

Osipov, V. P., and O. S. Orlov. "The Monolithic Integrated Microwave Circuits, Components and Devices." Telecommunications and Radio Engineering 56, no. 10 (2001): 11. http://dx.doi.org/10.1615/telecomradeng.v56.i10.30.

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36

Guan, Jin, Min Gong, Bo Gao, Yuxi Lu, and Yu Lu. "Design of K-band modified hairpin filter with harmonic suppression using GaAs MMIC process." Circuit World 45, no. 4 (2019): 287–91. http://dx.doi.org/10.1108/cw-01-2019-0006.

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Purpose The purpose of this paper is to present a K-band modified hairpin bandpass filter on a planar circuit with harmonic suppression and compact size. Design/methodology/approach The inter-connect transmission lines of conventional hairpin filter are replayed by T-shaped open stub to achieve transmission zero for second harmonic. This filter is simulated and optimized by using electromagnetic simulation software and tested on-chip. Findings This proposed filter shows the return loss of better than −10dB, the insertion loss of better than 2 dB in pass-band and suppression of more than 40 dB

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37

del Alamo, Jesús A. "GaAs Integrated Circuit Manufacturing." MRS Bulletin 17, no. 4 (1992): 42–44. http://dx.doi.org/10.1557/s0883769400041063.

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In the mid 1980s, reports of exciting progress from GaAs integrated circuit (IC) performance from R&D laboratories world-wide portrayed a rosy future for GaAs. Now, in the early 1990s, true to their reputation, GaAs ICs are still largely the stuff of the future. In fact, deployment of GaAs ICs in real systems has been disappointingly slow. In 1985, the commercial GaAs IC market was forecast to reach $800 million by 1990. The actual figure was only $142 million. To put this number in perspective, it represents less than 0.4% of the total Si IC merchant market.In a recent survey of the GaAs

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38

Makri, R., M. Gargalakos, and N. K. Uzunoglu. "Design and Development of Monolithic Microwave Integrated Amplifiers and Coupling Circuits for Telecommunication Systems Applications." Active and Passive Electronic Components 25, no. 1 (2002): 1–22. http://dx.doi.org/10.1080/08827510211275.

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Recent advances in printed circuit and packaging technology of microwave and millimeter wave circuits result to the increasing use of MMICs in telecommunication systems. At Microwave and Fiber Optics Lab of NTUA several designs of various MMICs were conducted using the HP Eesof CAD Tool and FET and HEMT models of F20 and H40 GaAs foundry process of GEC Marconi. The designed MMICs are constructed in Europractice Organization while on-wafer probe measurements are performed in the Lab. In that framework, MMIC technologies are employed in the design of power and low noise amplifiers and couplers t

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39

Hanae, El Ftouh, Bakkali Moustapha El, Touhami Naima Amar, and Alia Zakriti. "Ultra low phase noise and high output power monolithic microwave integrated circuit oscillator for 5G applications." International Journal of Electrical and Computer Engineering (IJECE) 12, no. 3 (2022): 2689–98. https://doi.org/10.11591/ijece.v12i3.pp2689-2698.

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A novel structure of low phase noise and high output power monolithic microwave integrated circuit (MMIC) oscillator is presented in order to use it in 5G applications. The oscillator is based on the ED02AH process which allows us to design a microwave oscillator keeping a minimum size which is impossible to have it using other technologies since microwave oscillators are sensitive components above 20 GHz. The oscillator is studied, designed, and optimized on a GaAs substrate from the OMMIC foundry using the advanced design system (ADS) simulator in order to obtain a miniaturized oscillator (1

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40

Donati Guerrieri, Simona, Chiara Ramella, Eva Catoggio, and Fabrizio Bonani. "Bridging the Gap between Physical and Circuit Analysis for Variability-Aware Microwave Design: Power Amplifier Design." Electronics 11, no. 18 (2022): 2832. http://dx.doi.org/10.3390/electronics11182832.

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Process Induced Variability (PIV) stemming from fabrication tolerance can impact the performance of integrated circuits. This issue is particularly significant at high frequencies, since Monolithic Microwave Integrated Circuits (MMICs) rely on advanced semiconductor technologies exploiting device sizes at the nanoscale in conjunction with complex passive structures, featuring both distributed elements (transmission lines) and lumped components. Black-box (behavioral) models extracted from accurate physical simulations can be profitably exploited to incorporate PIV into circuit-level MMIC analy

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41

Ghouz, Hussein. "ANALYSIS AND MODELING OF RESONANCE EFFECTS IN A MONOLITHIC MICROWAVE INTEGRATED CIRCUIT PACKAGE." International Conference on Electrical Engineering 1, no. 1 (1998): 115–27. http://dx.doi.org/10.21608/iceeng.1998.60214.

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42

Ji, Hong-Gu. "GaN HPA Monolithic Microwave Integrated Circuit for Ka band Satellite Down link Payload." Journal of the Korea Academia-Industrial cooperation Society 16, no. 12 (2015): 8643–48. http://dx.doi.org/10.5762/kais.2015.16.12.8643.

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43

Adonin, A. S., A. Yu Evgrafov, Yu V. Kolkovskii, and V. M. Minnebaev. "Electromagnetic Modeling of a Monolithic Microwave Integrated Circuit Attenuator on AlGaN/GaN Heterostructures." Russian Microelectronics 50, no. 3 (2021): 197–205. http://dx.doi.org/10.1134/s1063739721020025.

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44

Wiedmann, F., B. Huyart, E. Bergeault, and L. Jallet. "New structure for a six-port reflectometer in monolithic microwave integrated-circuit technology." IEEE Transactions on Instrumentation and Measurement 46, no. 2 (1997): 527–30. http://dx.doi.org/10.1109/19.571902.

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45

Chen, C. L., J. G. Black, L. J. Mahoney, et al. "GaAs monolithic microwave integrated circuit trimming using laser-direct-written tungsten microstrip lines." Electronics Letters 23, no. 8 (1987): 402. http://dx.doi.org/10.1049/el:19870293.

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46

Hanes, L. K. "Advanced direct write electron beam lithography for GaAs monolithic microwave integrated circuit production." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 7, no. 6 (1989): 1426. http://dx.doi.org/10.1116/1.584550.

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47

Chen, C. L., J. G. Black, S. P. Doran, L. J. Mahoney, R. A. Murphy, and D. J. Ehrlich. "Laser-direct-written capacitors and inductors for GaAs monolithic microwave integrated circuit trimming." Electronics Letters 24, no. 22 (1988): 1396. http://dx.doi.org/10.1049/el:19880955.

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48

Keimasi, Mohammadreza, Sanka Ganesan, and Michael Pecht. "Low temperature electrical measurements of silicon bipolar monolithic microwave integrated circuit (MMIC) amplifiers." Microelectronics Reliability 46, no. 2-4 (2006): 326–34. http://dx.doi.org/10.1016/j.microrel.2005.07.002.

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49

Bhasin, K. B., and D. J. Connolly. "Advances in Gallium Arsenide Monolithic Microwave Integrated-Circuit Technology for Space Communications Systems." IEEE Transactions on Microwave Theory and Techniques 34, no. 10 (1986): 994–1001. http://dx.doi.org/10.1109/tmtt.1986.1133489.

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50

Chen, Chih-Chiang, Hai-Tao Sun, and Jhen-Jie Cin. "A novel fast and effective methodology for CMOS monolithic microwave integrated circuit syntheses." Microwave and Optical Technology Letters 54, no. 4 (2012): 1053–56. http://dx.doi.org/10.1002/mop.26704.

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