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Journal articles on the topic 'MOS - Metal Oxide SemiConductor - Microprocessor'

Author: Grafiati

Published: 4 June 2021

Last updated: 1 February 2022

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1

Packan, Paul A. "Scaling Transistors into the Deep-Submicron Regime." MRS Bulletin 25, no. 6 (June 2000): 18–21. http://dx.doi.org/10.1557/mrs2000.93.

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The dominant device used in the semiconductor industry today is the silicon-based metal oxide semiconductor (MOS) transistor. The MOS transistor consists of a source, drain, channel, and gate region fabricated in single-crystal silicon (Figure 1). The source region provides a supply of mobile charge when the device is turned “on.” The source is electrically isolated from the drain by the channel region, which is oppositely charged. An insulating oxide layer between the gate and the channel region forms a capacitor. During operation, a voltage is applied to the gate. By applying the appropriate voltage, a conductive layer of charge can be attracted in the channel region at the oxide/silicon interface. This layer of charge acts as a wire that effectively connects the source and drain regions. By changing the voltage on the gate, the conducting layer of charge can be removed. Thus the transistor acts like a switch, with the gate electrode controlling the connection from the source to the drain. These individual switches can be connected to form the basic building blocks for circuit design. These building blocks are used to create the high-performance microprocessors and memory chips in today's computers.

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2

Wazzan, A. R. "MOS (Metal Oxide Semiconductor) Physics and Technology." Nuclear Technology 74, no. 2 (August 1986): 235–37. http://dx.doi.org/10.13182/nt86-a33811.

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3

Senthil Srinivasan, V. S., and Arun Pandya. "Dosimetry aspects of hafnium oxide metal-oxide-semiconductor (MOS) capacitor." Thin Solid Films 520, no. 1 (October 2011): 574–77. http://dx.doi.org/10.1016/j.tsf.2011.07.010.

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4

Abdul Amir, Haider F., and Abdulah Chik. "Neutron radiation effects on metal oxide semiconductor (MOS) devices." Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 267, no. 18 (September 2009): 3032–36. http://dx.doi.org/10.1016/j.nimb.2009.06.051.

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5

Hsieh, Chin-Hua, Mu-Tung Chang, Yu-Jen Chien, Li-Jen Chou, Lih-Juann Chen, and Chii-Dong Chen. "Coaxial Metal-Oxide-Semiconductor (MOS) Au/Ga2O3/GaN Nanowires." Nano Letters 8, no. 10 (October 8, 2008): 3288–92. http://dx.doi.org/10.1021/nl8016658.

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6

Pakma, Osman. "Current Mechanism in -Gated Metal-Oxide-Semiconductor Devices." International Journal of Photoenergy 2012 (2012): 1–7. http://dx.doi.org/10.1155/2012/858350.

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The present study aimed to examine the current density-voltage (J-V) characteristics of Al/HfO2/p-Si (MOS) structure at temperatures ranging between 100 and 320 K and to determine the structure’s current transport mechanism. The HfO2film was coated on a single side of the p-Si (111) crystal using the spin coating method. TheJ-Vmeasurements of the obtained structure at the temperatures between 100 and 320 K revealed that the current transport mechanism in the structure was compatible with the Schottky emission theory. The Schottky emission theory was also used to calculate the structure’s Schottky barrier heights (), dielectric constants () and refractive index values of the thin films at each temperature value. The dielectric constant and refractive index values were observed to decrease at decreasing temperatures. The capacitance-voltage (C-V) and conductance-voltage (G/ω-V) characteristics of Al/HfO2/p-Si (MOS) structure was measured in the temperature range of 100–320 K. The values of measuredCandG/ωdecrease in accumulation and depletion regions with decreasing temperature due to localized at Si/HfO2interface.

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7

Majkusiak, Bodgan, and Andrzej Mazurak. "Some Issues of Modeling the Double Barrier Metal-Oxide-Semiconductor Tunnel Structures." Advanced Materials Research 276 (July 2011): 77–85. http://dx.doi.org/10.4028/www.scientific.net/amr.276.77.

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The paper discusses some issues of modeling the MOS tunnel structure with a gate stack containing a semiconductor quantum well (double barrier MOS system). The considerations are illustrated by simulations with the use of a theoretical model. Results of simulations are compared with experimental characteristics of fabricated DB MOS diodes.

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8

GILDENBLAT, G., and D. FOTY. "LOW TEMPERATURE MODELS OF METAL OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTORS." International Journal of High Speed Electronics and Systems 06, no. 02 (June 1995): 317–73. http://dx.doi.org/10.1142/s0129156495000092.

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We review the modeling of silicon MOS devices in the 10–300 K temperature range with an emphasis on the specifics of low-temperature operation. Recently developed one-dimensional models of long-channel transistors are discussed in connection with experimental determination and verification of the effective channel mobility in a wide temperature range. We also present analytical pseudo-two-dimensional models of short-channel devices which have been proposed for potential use in circuit simulators. Several one-, two-, and three-dimensional numerical models are discussed in order to gain insight into the more subtle details of the low-temperature device physics of MOS transistors and capacitors. Particular attention is paid to freezeout effects which, depending on the device design and the ambient temperature range, may or may not be important for actual device operation. The numerical models are applied to study the characteristic time scale of freezeout transients in the space-charge regions of silicon devices, to the analysis and suppression of delayed turn-off in MOS transistors with compensated channel, and to the temperature dependence of three-dimensional effects in short-channel, narrow-channel MOSFETs.

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9

Liu, Chong, and Xiao Li Fan. "Methods to Improve Properties of Gate Dielectrics in Metal-Oxide-Semiconductor." Advanced Materials Research 463-464 (February 2012): 1341–45. http://dx.doi.org/10.4028/www.scientific.net/amr.463-464.1341.

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This essay aims to introduce development of gate dielectrics. In present-day society, Si-based MOS has met its physical limitation. Scientists are trying to find a better material to reduce the thickness and dimension of MOS devices. While substrate materials are required to have a higher mobility, gate dielectrics are expected to have high k, low Dit and low leakage current. I conclude dielectrics in both Si-based and Ge-based MOS devices and several measures to improve the properties of these gate dielectric materials. I also introduce studies on process in our group and some achievements we have got. Significantly, this essay points out the special interest in rare-earth oxides functioning as gate dielectrics in recent years and summarizes the advantages and problems should be resolved in future.

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10

Abdullah, K. A., M. J. Abdullah, F. K. Yam, and Z. Hassan. "Electrical characteristics of GaN-based metal-oxide-semiconductor (MOS) structures." Microelectronic Engineering 81, no. 2-4 (August 2005): 201–5. http://dx.doi.org/10.1016/j.mee.2005.03.007.

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11

Shyam, Radhey, Dhruva D. Kulkarni, Daniel A. Field, Endu S. Srinadhu, James E. Harriss, William R. Harrell, and Chad E. Sosolik. "Encapsulating Ion-Solid Interactions in Metal-Oxide-Semiconductor (MOS) Devices." IEEE Transactions on Nuclear Science 62, no. 6 (December 2015): 3346–52. http://dx.doi.org/10.1109/tns.2015.2489468.

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12

Zhang, Jian, Ziyu Qin, Dawen Zeng, and Changsheng Xie. "Metal-oxide-semiconductor based gas sensors: screening, preparation, and integration." Physical Chemistry Chemical Physics 19, no. 9 (2017): 6313–29. http://dx.doi.org/10.1039/c6cp07799d.

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13

Tikhov, Stanislav, Oleg Gorshkov, Ivan Antonov, Alexander Morozov, Maria Koryazhkina, and Dmitry Filatov. "Ion Migration Polarization in the Yttria Stabilized Zirconia Based Metal-Oxide-Metal and Metal-Oxide-Semiconductor Stacks for Resistive Memory." Advances in Condensed Matter Physics 2018 (2018): 1–8. http://dx.doi.org/10.1155/2018/2028491.

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We report the investigations of the ion migration polarization in the yttria stabilized zirconia (YSZ) thin films in the Metal-Oxide-Metal (MOM) and Metal-Oxide-Semiconductor (MOS) stacks due to the drift of the oxygen vacancies under the external bias voltage applied between the electrodes. The parameters characterizing the drift of the oxygen vacancies in YSZ such as the ion drift activation energy, mobile ion concentration, and the drift mobility have been determined in the temperature range 300–500 K. These data are important for deeper understanding of the fundamental mechanisms of the electroforming and resistive switching in the YSZ-based MOM and MOS stacks, which are promising for the Resistive Random Access Memory (RRAM) and other memristor device applications.

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14

Horng, Ray-Hua, Ming-Chun Tseng, and Dong-Sing Wuu. "Surface Treatments on the Characteristics of Metal–Oxide Semiconductor Capacitors." Crystals 9, no. 1 (December 20, 2018): 1. http://dx.doi.org/10.3390/cryst9010001.

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The properties of metal-oxide semiconductor (MOS) capacitors with different chemical treatments have been examined in this study. A MOS capacitor consists of an Al2O3/n-GaN/AlN buffer/Si substrate. Four chemical treatments, containing organic solvents, oxygen plasma and BCl3 plasma, dilute acidic and alkali solvents, and hydrofluoric acid, were used to reduce the metal ions, native oxides, and organic contaminants. The n-GaN surface was treated with these chemical treatments before Al2O3 was grown on the treated n-GaN surface to reduce the interface state trap density (Dit). The value of Dit was calculated using the capacitance–voltage curve at 1 MHz. The Dit of a u-GaN surface was modified using various solutions, which further influenced the contact properties of GaN.

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15

Konkar, Atul A., Wei Chen, and Kari Noehring. "Effect of surface oxide characteristics on Scanning Capacitance Microscopy Imaging." Microscopy and Microanalysis 5, S2 (August 1999): 978–79. http://dx.doi.org/10.1017/s1431927600018213.

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Scanning capacitance microscopy (SCM) is currently one of the most promising tools for twodimensional carrier profiling. This technique, based upon atomic force microscope (AFM) operated in the contact mode, uses a conductive probe which is scanned over the semiconductor surface. The conductive probe, oxide on the surface of the semiconductor, and the semiconductor substrate form a metal-oxide-semiconductor (MOS) structure. An a.c. bias is applied to the tip and the capacitance of the MOS structure is monitored. The a.c. bias changes the depletion of carriers in the semiconductor and thus the total capacitance of the structure. The maximum capacitance of the MOS structure is obtained when the semiconductor is in accumulation and the total capacitance of the structure is the capacitance of the semiconductor surface oxide. The minimum capacitance is obtained when the semiconductor region under the tip is in inversion. Since SCM the output signal is proportional to the differential capacitance, to get a high signal we need to maximize the difference between the maximum and minimum in the total MOS capacitance.

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16

Kim, H. S., D. H. Ko, D. L. Bae, N. I. Lee, D. W. Kim, H. K. Kang, and M. Y. Lee. "Gate oxide reliabilities in MOS (metal-oxide-semiconductor) structures with Ti-polycide gates." Journal of Electronic Materials 27, no. 4 (April 1998): L21—L25. http://dx.doi.org/10.1007/s11664-998-0418-3.

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17

Habersat, Daniel B., Aivars J. Lelis, G. Lopez, J. M. McGarrity, and F. Barry McLean. "On Separating Oxide Charges and Interface Charges in 4H-SiC Metal-Oxide-Semiconductor Devices." Materials Science Forum 527-529 (October 2006): 1007–10. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1007.

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We have investigated the distribution of oxide traps and interface traps in 4H Silicon Carbide MOS devices. The density of interface traps, Dit, was characterized using standard C-V techniques on capacitors and charge pumping on MOSFETs. The number of oxide traps, NOT, was then calculated by measuring the flatband voltage VFB in p-type MOS capacitors. The amount that the measured flatband voltage shifts from ideal, minus the contributions due to the number of filled interface traps Nit, gives an estimate for the number of oxide charges present. We found Dit to be in the low 1011cm−2eV−1 range in midgap and approaching 1012 −1013cm−2eV−1 near the band edges. This corresponds to an Nit of roughly 2.5 ⋅1011cm−2 for a typical capacitor in flatband at room temperature. This data combined with measurements of VFB indicates the presence of roughly 1.3 ⋅1012cm−2 positive NOT charges in the oxide near the interface for our samples.

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18

Zhang, Jian Xin, Jun Xing Liu, and You Bao Wan. "Radiation Effect of Metal-Oxide-Semiconductor Structure Irradiated by Electron." Applied Mechanics and Materials 161 (March 2012): 140–43. http://dx.doi.org/10.4028/www.scientific.net/amm.161.140.

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×MOS structure has been radiated by electron, dosage is 2×1013 cm-2 ~ 1×1014 cm-2. The interface density distributing in energy band has been tested by quasi-static method. It is found that interface density increase while electron dosage increasing. When dosage arrived to 1×1014 cm-2, interface density arrives to 1013(cm-2eV-1),which is two order of magnitude higher than without irradiation. Further more, the shapes of density increase curve are completely different.

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19

Schultealbert, Caroline, Johannes Amann, Tobias Baur, and Andreas Schütze. "Measuring Hydrogen in Indoor Air with a Selective Metal Oxide Semiconductor Sensor." Atmosphere 12, no. 3 (March 11, 2021): 366. http://dx.doi.org/10.3390/atmos12030366.

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Hydrogen is a ubiquitous but often neglected gas. In analytical measurements hydrogen—as a harmless gas—often is not considered so no studies on hydrogen in indoor air can be found. For metal oxide semiconductor (MOS) gas sensors that are increasingly pushed into the application as TVOC (total volatile organic compounds) sensors, hydrogen is a severe disturbance. On the other hand, hydrogen can be an intentional choice as indicator for human presence similar to carbon dioxide. We present a field-study on hydrogen in indoor air using selective MOS sensors accompanied by an analytical reference device for hydrogen with an accuracy of 10 ppb. Selectivity is achieved by siloxane treatment combined with temperature cycled operation and training with a complex lab calibration using randomized gas mixtures, yielding an uncertainty of 40–60 ppb. The feasibility is demonstrated by release tests with several gases inside a room and by comparison to the reference device. The results show that selective MOS sensors can function as cheap and available hydrogen detectors. Fluctuations in hydrogen concentration without human presence are measured over several days to gain insight in this highly relevant parameter for indoor air quality. The results indicate that the topic needs further attention and that the usage of hydrogen as indicator for human presence might be precluded by other sources and fluctuations.

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20

Höfner, Sebastian, Andreas Schütze, Michael Hirth, Jochen Kuhn, and Benjamin Brück. "Calibration of Metal Oxide Semiconductor Gas Sensors by High School Students." International Journal of Online and Biomedical Engineering (iJOE) 17, no. 04 (April 6, 2021): 4. http://dx.doi.org/10.3991/ijoe.v17i04.19215.

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A wide range of pollutants cannot be perceived with human senses, which is why the use of gas sensors is indispensable for an objective assessment of air quality. Since many pollutants are both odorless and colorless, there is a lack of awareness, in particular among students. The project SUSmobil (funded by DBU – Deutsche Bundesstiftung Umwelt) aims to change this. In three modules on the topic of gas sensors and air quality, the students (a) learn the functionality of a metal oxide semiconductor (MOS) gas sensor, (b) perform a calibration process and (c) carry out environmental measurements with calibrated sensors. Based on these introductory experiments, the students are encouraged to develop their own environmental questions. In this paper, the student experiment for the calibration of a MOS gas sensor for ethanol is discussed. The experiment, designed as an HTML-based learning, addresses both theoretical and practical aspects of a typical sensor calibration process, consisting of data acquisition, feature extraction and model generation. In this example, machine learning is used for generating the evaluation model as existing physical models are not sufficiently exact.

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21

Kempf, P., R. Hadaway, and J. Kolk. "Complementary metal oxide semiconductor compatible high-voltage transistors." Canadian Journal of Physics 65, no. 8 (August 1, 1987): 1003–8. http://dx.doi.org/10.1139/p87-161.

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The purpose of this work was to study the implementation of high-voltage transistors using standard 3–5 μm complementary metal oxide semiconductor (CMOS) technology with a minimum of additional photolithographic or implant steps. A fabrication process was designed to accommodate a variety of high-voltage transistors with greater than 450 V breakdown voltage and low-voltage CMOS. Extensive use was made of a two-dimensional device model and a one-dimensional process model to determine suitable process parameters. The necessary conditions to produce a high-voltage double-diffused metal oxide semiconductor (DMOS) structure, as well as both n-well and p-well regions for CMOS transistors, and a thick gate oxide required to sustain the full blocking voltage were the main determinants of the process flow. Lateral DMOS (LDMOS), vertical DMOS (VDMOS), conductivity modulated FET (COMFET), and MOS triac (TRIMOS) devices were fabricated on the same chip as standard CMOS transistors using the developed fabrication sequence. This paper includes the results of the process modelling, device design, and electrical measurements.

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22

Choi, Chel-Jong, Ha-Yong Yang, Hyo-Bong Hong, Jin-Gyu Kim, Sung-Yong Chang, and Jouhahn Lee. "Characteristics of metal-oxide-semiconductor (MOS) device with Er metal gate on SiO2 film." Microelectronics Reliability 49, no. 4 (April 2009): 463–65. http://dx.doi.org/10.1016/j.microrel.2008.12.014.

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23

Markna, J. H., Davit Dhruv, K. N. Rathod, Chirag Savaliya, T. M. Shiyani, Dhiren Pandya, Ashvini D. Joshi, and N. A. Shah. "Charge Trap Mechanism in Hybrid Nanostructured (YMnO₃) Metal-Oxide-Semiconductor (MOS) Devices." Journal of Nano Research 42 (July 2016): 92–99. http://dx.doi.org/10.4028/www.scientific.net/jnanor.42.92.

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Hybrid nanostructured Metal Oxide Semiconductor (MOS) capacitor was fabricated on silicon substrates (n-type) using chemical solution deposition with YMnO3 as an oxide layer. Electrical properties of MOS capacitor have been investigated with frequency dependence capacitance-voltage (C-V) characterization. The surface morphology of deposited layer was studied using the Atomic Force Microscopy (AFM). Hysteresis in the C-V loop and change in the values of Cminimum were described by a charge trap mechanism in the multiferroic oxide layer of MOS devices. While anomalous behavior in saturation capacitance in the inversion as well as in accumulation region and a shift in threshold voltage (VT) were explained in the vicinity of frequency depended Debye length (LDebye).

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24

Hoffmann, Rudolf C., Nico Koslowski, Shawn Sanctis, Maciej O. Liedke, Andreas Wagner, Maik Butterling, and Jörg J. Schneider. "Metal oxide double layer capacitors by electrophoretic deposition of metal oxides. Fabrication, electrical characterization and defect analysis using positron annihilation spectroscopy." Journal of Materials Chemistry C 6, no. 35 (2018): 9501–9. http://dx.doi.org/10.1039/c8tc03330g.

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25

Li, Wenting, and Gu Xu. "Unexpected Selectivity of UV Light Activated Metal-Oxide-Semiconductor Gas Sensors by Two Different Redox Processes." Journal of Sensors 2016 (2016): 1–6. http://dx.doi.org/10.1155/2016/4306154.

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The conflict between the two existing models was resolved, to provide a clear explanation for the unexpected “selectivity” found in UV light activated metal-oxide-semiconductor (MOS) gas sensors during the detection of reducing agents. A new model based on the dynamic equilibrium of adsorbed oxygen concentration was constructed by two types of responses: (1) when the MOS surface is adsorbed with oxygen, the conductance of the sensor increases upon injection of reducing agents (RA) (α-type) and (2) when the MOS surface is not covered by oxygen, the conductance decreases upon injection of RA (β-type). The proposed model was verified by the experiments of ZnO based MOS gas sensors, to reveal the origin of the unexpected “selectivity” found by the optimum intensity, where the current drop, due to the reaction between RA and MOS, which increases with UV power and levels with the reciprocal background current, which decreases with the UV power.

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26

Okamoto, Dai, Hiroshi Yano, Yuki Oshiro, Tomoaki Hatayama, Yukiharu Uraoka, and Takashi Fuyuki. "Investigation of Oxide Films Prepared by Direct Oxidation of C-Face 4H-SiC in Nitric Oxide." Materials Science Forum 645-648 (April 2010): 515–18. http://dx.doi.org/10.4028/www.scientific.net/msf.645-648.515.

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Characteristics of metal–oxide–semiconductor (MOS) capacitors and MOS field-effect transistors (MOSFETs) fabricated by direct oxidation of C-face 4H-SiC in NO were investigated. It was found that nitridation of the C-face 4H-SiC MOS interface generates near-interface traps (NITs) in the oxide. These traps capture channel mobile electrons and degrade the performance of MOSFETs. The NITs can be reduced by unloading the samples at room temperature after oxidation. It is important to reduce not only the interface states but also the NITs to fabricate high-performance C-face 4H-SiC MOSFETs with nitrided gate oxide.

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27

Lin, Dennis H. C., Guy Brammertz, Sonja Sioncke, Laura Nyns, Alireza Alian, Wei-E. Wang, Marc Heyns, Matty Caymax, and Thomas Hoffmann. "Electrical Characterization of the MOS (Metal-Oxide-Semiconductor) System: High Mobility Substrates." ECS Transactions 34, no. 1 (December 16, 2019): 1065–70. http://dx.doi.org/10.1149/1.3567716.

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28

Abdul Amir, Haider F., Abu Hassan Husin, Saafie Salleh, and Fuei Pien Chee. "A Model for Neutron Radiation Damage in Metal Oxide Semiconductor (MOS) Structures." Key Engineering Materials 706 (August 2016): 51–54. http://dx.doi.org/10.4028/www.scientific.net/kem.706.51.

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Neutron bombardment on semiconductor material causes defects, one such primary physical effect is the formation of displacement defects within the crystal lattice structure, and such defects effectively decrease the mean free path and thus shorten the recombination time. Ionizing radiation causes creation of electron-hole pair in the gate oxide and in parasitic insulating layers of the MOS devices. Calculations show increase of the dark current in depletion region caused by a single neutron. Determination of energy and angular distribution of primary knock on atoms, with 14 MeV neutron irradiation in silicon are presented.

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29

Hossain, Tashfin Z., Daming Wei, and James H. Edgar. "Electrical Characteristics of GaN and Si Based Metal-Oxide-Semiconductor (MOS) Capacitors." ECS Transactions 41, no. 3 (December 16, 2019): 429–37. http://dx.doi.org/10.1149/1.3633058.

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30

Nedev, Nicola, Emil Manolov, Diana Nesheva, Kiril Krezhov, Roumen Nedev, Mario Curiel, Benjamin Valdez, Alexander Mladenov, and Zelma Levi. "Radiation Dosimeter Based on Metal-Oxide-Semiconductor Structures Containing Silicon Nanocrystals." Key Engineering Materials 495 (November 2011): 120–23. http://dx.doi.org/10.4028/www.scientific.net/kem.495.120.

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MOS structures containing silicon nanocrystals in the gate dielectric have been tested as dosimeters for ionizing radiation. Before irradiation the nanocrystals have been charged with electrons by applying a pulse to the gate electrode. The γ-irradiation with doses in the range 0-100 Gy causes approximately linear variation of the flatband voltage, resulting in sensitivities of ~ 2.5 mV/Gy. At higher doses the sensitivity decreases because of decrease of the oxide electric field.

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Davari, Seyyed Ali, Sheng Hu, Ravi Pamu, and Dibyendu Mukherjee. "Calibration-free quantitative analysis of thin-film oxide layers in semiconductors using laser induced breakdown spectroscopy (LIBS)." Journal of Analytical Atomic Spectrometry 32, no. 7 (2017): 1378–87. http://dx.doi.org/10.1039/c7ja00083a.

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32

Palma, Fabrizio. "Self-Mixing Model of Terahertz Rectification in a Metal Oxide Semiconductor Capacitance." Electronics 9, no. 3 (March 14, 2020): 479. http://dx.doi.org/10.3390/electronics9030479.

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Metal oxide semiconductor (MOS) capacitance within field effect transistors are of great interest in terahertz (THz) imaging, as they permit high-sensitivity, high-resolution detection of chemical species and images using integrated circuit technology. High-frequency detection based on MOS technology has long been justified using a mechanism described by the plasma wave detection theory. The present study introduces a new interpretation of this effect based on the self-mixing process that occurs in the field effect depletion region, rather than that within the channel of the transistor. The proposed model formulates the THz modulation mechanisms of the charge in the potential barrier below the oxide based on the hydrodynamic semiconductor equations solved for the small-signal approximation. This approach explains the occurrence of the self-mixing process, the detection capability of the structure and, in particular, its frequency dependence. The dependence of the rectified voltage on the bias gate voltage, substrate doping, and frequency is derived, offering a new explanation for several previous experimental results. Harmonic balance simulations are presented and compared with the model results, fully validating the model’s implementation. Thus, the proposed model substantially improves the current understanding of THz rectification in semiconductors and provides new tools for the design of detectors.

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Mooy, Brian Chi Ho, Kuan Yen Tan, and Nai Shyan Lai. "Comparison of Strain Effect between Aluminum and Palladium Gated MOS Quantum Dot Systems." Universe 6, no. 4 (April 6, 2020): 51. http://dx.doi.org/10.3390/universe6040051.

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As nano-scale metal-oxide-semiconductor devices are cooled to temperatures below 1 K, detrimental effects due to unintentional dots become apparent. The reproducibility of the location of these unintentional dots suggests that there are other mechanisms in play, such as mechanical strains in the semiconductor introduced by metallic gates. Here, we investigate the formation of strain-induced dots on aluminum and palladium gated metal oxide semiconductor (MOS) quantum devices using COMSOL Multiphysics. Simulation results show that the strain effect on the electrochemical potential of the system can be minimized by replacing aluminum with palladium as the gate material and increasing the thickness of the gate oxide.

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Phuc, Tran Van, M. Kulik, A. P. Kobzev, and Le Hong Khiem. "Study of Mos Structures Using Nuclear Analytical Methods." Communications in Physics 27, no. 4 (January 31, 2018): 279. http://dx.doi.org/10.15625/0868-3166/27/4/10825.

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The atomic concentrations and depth distribution of elements in MOS (metal oxide semiconductor) structures have been investigated using two nuclear analytical methods: Rutherford Backscattering Spectrometry (RBS) and Elastic Recoil Detection (ERD). The elements with atomic masses in range from hydrogen up to copper were identified. Their depth profiles show that a MOS structure consists from metal (Al) layer, silicon oxide layer and a silicon substrate. The heavy elements Cu, Ti were found at near-surface area of one sample with low concentrations. The transitional area between the silicon substrate and the oxide layer as well as between the metal and oxide layers was noticed. The obtained results provide valuable information about MOS structures and concurrently demonstrate possibilities of both RBS and ERD methods in material analysis.

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35

Palma, Fabrizio. "New Insight on Terahertz Rectification in a Metal–Oxide–Semiconductor Field-Effect Transistor Structure." Electronics 9, no. 7 (July 3, 2020): 1089. http://dx.doi.org/10.3390/electronics9071089.

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The use of a metal–oxide–semiconductor field-effect transistor (MOS-FET) permits the rectification of electromagnetic radiation by employing integrated circuit technology. However, obtaining a high-efficiency rectification device requires the assessment of a physical model capable of providing a qualitative and quantitative explanation of the processes involved. For a long time, high-frequency detection based on MOS technology was explained using plasma wave detection theory. In this paper, we review the rectification mechanism in light of high-frequency numerical simulations, showing features never examined until now. The results achieved substantially change our understanding of terahertz (THz) rectification in semiconductors, and can be interpreted by the model based on the self-mixing process in the device substrate, providing a new and essential tool for designing this type of detector.

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Lee, Hui En, Zehnder J. A. Mercer, Sing Muk Ng, Mahnaz Shafiei, and Hong Siang Chua. "Geo-Tracing of Black Pepper Using Metal Oxide Semiconductor (MOS) Gas Sensors Array." IEEE Sensors Journal 20, no. 14 (July 15, 2020): 8039–45. http://dx.doi.org/10.1109/jsen.2020.2981602.

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37

Beniwal, Ajay. "A Study & Real Time Monitoring of Metal Oxide Semiconductor (MOS) Gas Sensor." IOSR Journal of Electronics and Communication Engineering 01, no. 01 (January 2016): 07–12. http://dx.doi.org/10.9790/2834-150100712.

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38

Choi, Woo Young. "Applications of impact-ionization metal–oxide-semiconductor (I-MOS) devices to circuit design." Current Applied Physics 10, no. 2 (March 2010): 444–51. http://dx.doi.org/10.1016/j.cap.2009.07.001.

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39

Islam, Sk Masiul, K. Sarkar, P. Banerji, Kalyan Jyoti Sarkar, and Biswajit Pal. "Leakage current characteristics in MOCVD grown InAs quantum dot embedded GaAs metal-oxide-semiconductor capacitor." RSC Advances 5, no. 102 (2015): 83837–42. http://dx.doi.org/10.1039/c5ra15642d.

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Akagi, Tsuyoshi, Hiroshi Yano, Tomoaki Hatayama, and Takashi Fuyuki. "Effect of Interfacial Localization of Phosphorus on Electrical Properties and Reliability of 4H-SiC MOS Devices." Materials Science Forum 740-742 (January 2013): 695–98. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.695.

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Metal-oxide-semiconductor (MOS) capacitors with phosphorus localized near the SiO2/SiC interface were fabricated on 4H-SiC by direct POCl3treatment followed by SiO2deposition. Post-deposition annealing (PDA) temperature affected MOS device properties and phosphorus distribution in the oxide. The sample with PDA at 800 °C showed narrow phosphorus-doped oxide region, resulting in low interface state density near the conduction band edge and small flatband voltage shift after FN injection. The interfacial localization of phosphorus improved both interface properties and reliability of 4H-SiC MOS devices.

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An, Yanbin, Aniruddh Shekhawat, Ashkan Behnam, Eric Pop, and Ant Ural. "Characterization of Graphene Gate Electrodes for Metal-Oxide-Semiconductor Devices." MRS Advances 2, no. 02 (2017): 103–8. http://dx.doi.org/10.1557/adv.2017.65.

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ABSTRACT We fabricate and characterize metal-oxide-semiconductor (MOS) devices with graphene as the gate electrode, 5 or 10 nm thick silicon dioxide as the insulator, and silicon as the semiconductor substrate. We find that Fowler-Nordheim tunneling dominates the gate current for the 10 nm oxide device. We also study the temperature dependence of the tunneling current in these devices in the range 77 to 300 K and extract the effective tunneling barrier height as a function of temperature for the 10 nm oxide device. Furthermore, by performing high frequency capacitance-voltage measurements, we observe a local capacitance minimum under accumulation, particularly for the 5 nm oxide device. By fitting the data using numerical simulations based on the modified density of states of graphene in the presence of charged impurities, we show that this local minimum results from the quantum capacitance of graphene. These results provide important insights for the heterogeneous integration of graphene into conventional silicon technology.

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Barış, Behzad. "Analysis of device parameters for Au/tin oxide/n-Si(100) metal–oxide–semiconductor (MOS) diodes." Physica B: Condensed Matter 438 (April 2014): 65–69. http://dx.doi.org/10.1016/j.physb.2014.01.009.

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43

Wang, Chih-Yao, and Jenn-Gwo Hwu. "Characterization of Stacked Hafnium Oxide (HfO2)/Silicon Dioxide (SiO2) Metal-Oxide-Semiconductor (MOS) Tunneling Temperature Sensors." ECS Transactions 25, no. 6 (December 17, 2019): 361–70. http://dx.doi.org/10.1149/1.3206635.

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Matsumoto, T., T. Sawaji, T. Sakai, and H. Nagai. "A Floating-Gate MOS Implementation of Resistive Fuse." Neural Computation 10, no. 2 (February 1, 1998): 485–98. http://dx.doi.org/10.1162/089976698300017854.

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Resistive fuses are key elements in weak string filters, which smooth out noise while detecting step edges inherent in original data. A resistive fuse is implemented by two pairs of floating-gate metal oxide semiconductor (MOS) transistors in a chip by a standard double poly complementary MOS process.

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Gradauskas, Jonas, and Steponas Ašmontas. "Hot Carrier Photocurrent through MOS Structure." Applied Sciences 11, no. 16 (August 5, 2021): 7211. http://dx.doi.org/10.3390/app11167211.

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Flow of photocurrent through the metal-oxide-semiconductor structure induced by the pulsed infrared CO2 laser is investigated experimentally. In the case of a perfect insulator, the photocurrent has a photocapacitive character. Its rise is based on the hot carrier phenomenon; no carrier generation is present, only redistribution of laser-heated carriers takes place at the semiconductor surface. The magnitude of this displacement current is related to the capacitance of the structure and is dependent on the rate of the laser pulse change as well as on the laser light intensity. This effect can find application in the detection of fast infrared laser pulses as well as in the development of infrared photovaractors. Operation of such devices would not require cryogenic temperatures what is usually needed by the long-wavelength infrared semiconductor technique.

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Fiorenza, Patrick, Filippo Giannazzo, Mario Giuseppe Saggio, and Fabrizio Roccaforte. "SiO₂/SiC MOSFETs Interface Traps Probed by Nanoscale Analyses and Transient Current and Capacitance Measurements." Materials Science Forum 963 (July 2019): 230–35. http://dx.doi.org/10.4028/www.scientific.net/msf.963.230.

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This paper aims to give an overview on some relevant aspects of the characterization of the SiO2/4H-SiC interface, considering the properties of this system both at the interface and inside the insulator. Nanoscale scanning probe microscopy (SPM) techniques were used to get insights on the homogeneity of the SiO2/SiC interface electrical properties upon metal-oxide-semiconductor (MOS) processing. On the other hand, capacitance and current measurements as a function of time were employed to investigate trapping states in MOS structures in the SiO2/4H-SiC system. In particular, time-dependent gate current measurements gave information on the near interface oxide traps (NIOTs) present inside the SiO2 layer. The impact of the observed trapping phenomena on SiO2/SiC metal oxide semiconductor field effect transistors (MOSFETs) operation is discussed.

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Maity, N. P., Reshmi Maity, R. K. Thapa, and S. Baishya. "Study of Interface Charge Densities for ZrO2and HfO2Based Metal-Oxide-Semiconductor Devices." Advances in Materials Science and Engineering 2014 (2014): 1–6. http://dx.doi.org/10.1155/2014/497274.

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A thickness-dependent interfacial distribution of oxide charges for thin metal oxide semiconductor (MOS) structures using high-kmaterials ZrO2and HfO2has been methodically investigated. The interface charge densities are analyzed using capacitance-voltage (C-V) method and also conductance (G-V) method. It indicates that, by reducing the effective oxide thickness (EOT), the interface charge densities (Dit) increases linearly. For the same EOT,Dithas been found for the materials to be of the order of 1012 cm−2 eV−1and it is originated to be in good agreement with published fabrication results at p-type doping level of1×1017 cm−3. Numerical calculations and solutions are performed by MATLAB and device simulation is done by ATLAS.

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Mizuno, Tomohisa, Mitsuo Hasegawa, and Toshiyuki Sameshima. "Novel Source Heterojunction Structures with Relaxed-/Strained-Layers for Quasi-Ballistic CMOS Transistors." Key Engineering Materials 470 (February 2011): 72–78. http://dx.doi.org/10.4028/www.scientific.net/kem.470.72.

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We have studied new abrupt-source-relaxed/strained semiconductor-heterojunction structures for quasi-ballistic complementary-metal-oxide-semiconductor (CMOS) devices, by locally controlling the strain of a single strained semiconductor. Appling O+ ion implantation recoil energy to the strained semiconductor/buried oxide interface, Raman analysis of the strained layers indicates that we have successfully relaxed both strained-Si-on-insulator (SSOI) substrates for n-MOS and SiGe-on-insulator (SGOI) substrates for p-MOS without poly crystallizing the semiconductor layers, by optimizing O+ ion implantation conditions. As a result, it is considered that the source conduction and valence band offsets EC and EV can be realized by the energy difference in the source Si/channel-strained Si and the source-relaxed SiGe/channel-strained SiGe layers, respectively. The device simulator, considering the tunneling effects at the source heterojunction, shows that the transconductance of sub-10 nm source heterojunction MOS transistors (SHOT) continues to increase with increasing EC. Therefore, SHOT structures with the novel source heterojunction are very promising for future quasi-ballistic CMOS devices.

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Chen, Huey-Ing, Ching-Hong Chang, Hsin-Hau Lu, I.-Ping Liu, Wei-Cheng Chen, Bu-Yuan Ke, and Wen-Chau Liu. "Hydrogen sensing performance of a Pd/HfO2/GaN metal-oxide-semiconductor (MOS) Schottky diode." Sensors and Actuators B: Chemical 262 (June 2018): 852–59. http://dx.doi.org/10.1016/j.snb.2018.02.077.

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Kuo-Chung Lee and Jenn-Gwo Hwu. "17.3% efficiency metal-oxide-semiconductor (MOS) solar cells with liquid-phase-deposited silicon dioxide." IEEE Electron Device Letters 18, no. 11 (November 1997): 565–67. http://dx.doi.org/10.1109/55.641447.

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