Academic literature on the topic 'MoS2 characterization'
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Journal articles on the topic "MoS2 characterization"
Withanage, Sajeevi S., Mike Lopez, Wasee Sameen, Vanessa Charles, and Saiful I. Khondaker. "Elucidation of the growth mechanism of MoS2 during the CVD process." MRS Advances 4, no. 10 (December 26, 2018): 581–86. http://dx.doi.org/10.1557/adv.2018.660.
Full textZhang, Xian. "Characterization of Layer Number of Two-Dimensional Transition Metal Diselenide Semiconducting Devices Using Si-Peak Analysis." Advances in Materials Science and Engineering 2019 (September 10, 2019): 1–7. http://dx.doi.org/10.1155/2019/7865698.
Full textNiu, Yue, Sergio Gonzalez-Abad, Riccardo Frisenda, Philipp Marauhn, Matthias Drüppel, Patricia Gant, Robert Schmidt, et al. "Thickness-Dependent Differential Reflectance Spectra of Monolayer and Few-Layer MoS2, MoSe2, WS2 and WSe2." Nanomaterials 8, no. 9 (September 14, 2018): 725. http://dx.doi.org/10.3390/nano8090725.
Full textChikukwa, Evernice, Edson Meyer, Johannes Mbese, and Nyengerai Zingwe. "Colloidal Synthesis and Characterization of Molybdenum Chalcogenide Quantum Dots Using a Two-Source Precursor Pathway for Photovoltaic Applications." Molecules 26, no. 14 (July 9, 2021): 4191. http://dx.doi.org/10.3390/molecules26144191.
Full textHu, J. J., J. H. Sanders, and J. S. Zabinski. "Synthesis and microstructural characterization of inorganic fullerene-like MoS2 and graphite-MoS2 hybrid nanoparticles." Journal of Materials Research 21, no. 4 (April 1, 2006): 1033–40. http://dx.doi.org/10.1557/jmr.2006.0118.
Full textPolitano, Grazia Giuseppina, Marco Castriota, Maria Penelope De Santo, Mario Michele Pipita, Giovanni Desiderio, Carlo Vena, and Carlo Versace. "Variable Angle Spectroscopic Ellipsometry Characterization of Spin-Coated MoS2 Films." Materials Proceedings 4, no. 1 (November 12, 2020): 86. http://dx.doi.org/10.3390/iocn2020-07978.
Full textZhang, Huiying, Xiang Li, Wenjie Qian, Jianguo Zhu, Beibei Chen, Jin Yang, and Yu Xia. "Characterization of mechanical properties of epoxy/nanohybrid composites by nanoindentation." Nanotechnology Reviews 9, no. 1 (February 18, 2020): 28–40. http://dx.doi.org/10.1515/ntrev-2020-0003.
Full textVenkateswarlu, Gundu, Devarapaga Madhu, and Jetti Vatsala Rani. "Electroanalytical characterization of F-doped MoS2 cathode material for rechargeable magnesium battery." Functional Materials Letters 12, no. 03 (May 16, 2019): 1950041. http://dx.doi.org/10.1142/s1793604719500413.
Full textHu, Kun Hong, Xian Guo Hu, Xiao Jun Sun, He Feng Jing, and Song Zhan. "Synthesis and Characterization of Nanosize Molybdenum Disulfide Particles by Quick Homogeneous Precipitation Method." Key Engineering Materials 353-358 (September 2007): 2107–10. http://dx.doi.org/10.4028/www.scientific.net/kem.353-358.2107.
Full textAbid, Mohammad F., Mohammed A. Hamza, Shakir M. Ahmed, Salah M. Ali, and Sattar J. Hussein. "SYNTHESIS AND CHARACTERIZATION OF UNSUPPORTED CATALYST FOR GAS OIL DESULFURIZATION." Al-Qadisiyah Journal for Engineering Sciences 11, no. 3 (January 31, 2019): 357–71. http://dx.doi.org/10.30772/qjes.v11i3.566.
Full textDissertations / Theses on the topic "MoS2 characterization"
Ma, Lu. "Synthesis and Characterization of Large Area Few-layer MoS2 and WS2 Films." The Ohio State University, 2014. http://rave.ohiolink.edu/etdc/view?acc_num=osu1388149255.
Full textHuang, Zhida [Verfasser]. "Characterization and catalytic activity study of SBA-15-supported MoO3, MoS2, Ni or Co promoted MoS2 and Co promoted WS2 / Zhida Huang." Kiel : Universitätsbibliothek Kiel, 2010. http://d-nb.info/1019951621/34.
Full textYoung, Justin R. "Synthesis and Characterization of Novel Two-Dimensional Materials." The Ohio State University, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=osu1468925594.
Full textAlrobei, Hussein. "Synthesis and Characterization of Alpha-Hematite Nanomaterials for Water-Splitting Applications." Scholar Commons, 2018. https://scholarcommons.usf.edu/etd/7661.
Full textSingh, Harpal. "An Investigation of Material Properties and Tribological Performance of Magnetron Sputtered Thin Film Coatings." University of Akron / OhioLINK, 2015. http://rave.ohiolink.edu/etdc/view?acc_num=akron1449850005.
Full textGomes, Francis Oliver Vinay [Verfasser], Veit [Akademischer Betreuer] Wagner, Veit [Gutachter] Wagner, Thomas [Gutachter] Heine, and Ralf [Gutachter] Anselmann. "Film growth and characterization of solution processed MoS2 semiconductor films for thin film transistors / Francis Oliver Vinay Gomes ; Gutachter: Veit Wagner, Thomas Heine, Ralf Anselmann ; Betreuer: Veit Wagner." Bremen : IRC-Library, Information Resource Center der Jacobs University Bremen, 2019. http://d-nb.info/1190888181/34.
Full textSwati, Swati, Richard Sante, and Aruna Kilaru. "Characterization of Arachidonylethanolamide Metabolic Pathway in Moss." Digital Commons @ East Tennessee State University, 2014. https://dc.etsu.edu/etsu-works/4803.
Full textSwati, Swati, Richard Sante, Brent Kinser, and Aruna Kilaru. "Characterization of Anandamide Metabolic Pathway in Moss." Digital Commons @ East Tennessee State University, 2014. https://dc.etsu.edu/etsu-works/4853.
Full textDiouf, Cheikh. "Caractérisation électrique des transistors d’architecture innovante pour les longueurs de grilles décananométriques." Thesis, Grenoble, 2013. http://www.theses.fr/2013GRENT082/document.
Full textThe MOS gate length is continuously downscaling because of the need of higher performance and cost-effectiveness. In addition to the fabrication process, the device architecture is being more and more complex and parameters extraction need to be adapted. First in this thesis, the effects of high pressure final anneal with hydrogen (HPH2) or deuterium (HPD2) on MOSFET properties is investigated. The transport performances and reliability degradation comparison allow to consider HPD2 as a good compromise. The effect of a silicon-germanium (SiGe) channel is also studied. It is demonstrated that SiGe channel decreases defects located in the high-κ gate stack. The presence of these defects is confirmed by the study of the negative effects of a high-k as a gate oxide. Secondly, the “Y function” method is extended to the saturation regime to reliably extract saturation velocity, obtained in the same conditions as ION current. The problematic due to inversion charge estimation in short devices is solved using high frequency measurements with a two ports structure. Then, effective mobility, average velocity and limiting velocity are obtained in ultra-scaled devices
Persson, Stefan. "Modeling and characterization of novel MOS devices." Doctoral thesis, KTH, Microelectronics and Information Technology, IMIT, 2004. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-3720.
Full textChallenges with integrating high-κ gate dielectric,retrograde Si1-xGexchannel and silicided contacts in future CMOStechnologies are investigated experimentally and theoreticallyin this thesis. ρMOSFETs with either Si or strained Si1-xGex surface-channel and different high-κgate dielectric are examined. Si1-xGex ρMOSFETs with an Al2O3/HfAlOx/Al2O3nano-laminate gate dielectric prepared by means ofAtomic Layer Deposition (ALD) exhibit a great-than-30% increasein current drive and peak transconductance compared toreference Si ρMOSFETs with the same gate dielectric. Apoor high-κ/Si interface leading to carrier mobilitydegradation has often been reported in the literature, but thisdoes not seem to be the case for our Si ρMOSFETs whoseeffective mobility coincides with the universal hole mobilitycurve for Si. For the Si1-xGexρMOSFETs, however, a high density ofinterface states giving riseto reduced carrier mobility isobserved. A method to extract the correct mobility in thepresence of high-density traps is presented. Coulomb scatteringfrom the charged traps or trapped charges at the interface isfound to play a dominant role in the observed mobilitydegradation in the Si1-xGexρMOSFETs.
Studying contacts with metal silicides constitutes a majorpart of this thesis. With the conventional device fabrication,the Si1-xGexincorporated for channel applications inevitablyextends to the source-drain areas. Measurement and modelingshow that the presence of Ge in the source/drain areaspositively affects the contact resistivity in such a way thatit is decreased by an order of magnitude for the contact of TiWto p-type Si1-xGex/Si when the Ge content is increased from 0 to 30at. %. Modeling and extraction of contact resistivity are firstcarried out for the traditional TiSi2-Si contact but with an emphasis on the influenceof a Nb interlayer for the silicide formation. Atwo-dimensional numerical model is employed to account foreffects due to current crowding. For more advanced contacts toultra-shallow junctions, Ni-based metallization scheme is used.NiSi1-xGex is found to form on selectively grown p-typeSi1-xGexused as low-resistivity source/drain. Since theformed NiSi1-xGex with a specific resistivity of 20 mWcmreplaces a significant fraction of the shallow junction, athree-dimensional numerical model is employed in order to takethe complex interface geometry and morphology into account. Thelowest contact resistivity obtained for our NiSi1-xGex/p-type Si1-xGexcontacts is 5´10-8Ωcm2, which satisfies the requirement for the 45-nmtechnology node in 2010.
When the Si1-xGexchannel is incorporated in a MOSFET, it usuallyforms a retrograde channel with an undoped surface region on amoderately doped substrate. Charge sheet models are used tostudy the effects of a Si retrograde channel on surfacepotential, drain current, intrinsic charges and intrinsiccapacitances. Closed-form solutions are found for an abruptretrograde channel and results implicative for circuitdesigners are obtained. The model can be extended to include aSi1-xGexretrograde channel. Although the analytical modeldeveloped in this thesis is one-dimensional for long-channeltransistors with the retrograde channel profile varying alongthe depth of the transistor, it should also be applicable forshort-channel transistors provided that the short channeleffects are perfectly controlled.
Key Words:MOSFET, SiGe, high-k dielectric, metal gate,mobility, charge sheet model, retrograde channel structure,intrinsic charge, intrinsic capacitance, contactresistivity.
Books on the topic "MoS2 characterization"
Massachusetts. Bureau of Waste Site Cleanup. Top ten most common MCP risk characterization problems. [Boston, Mass.]: Massachusetts Dept. of Environmental Protection, Bureau of Waste Site Cleanup, 1996.
Find full textDevelopment and characterization of SiC/MoSi₂-Si₃N₄(p) hybrid composites. [Cleveland, Ohio]: National Aeronautics and Space Administration, Lewis Research Center, 1998.
Find full textSupercapacitor Technology. Materials Research Forum LLC, 2019. http://dx.doi.org/10.21741/9781644900499.
Full textMahapatra, Souvik. Fundamentals of Bias Temperature Instability in MOS Transistors: Characterization Methods, Process and Materials Impact, DC and AC Modeling. Springer, 2016.
Find full textNorth, Robert, and Ganesh Rao. Medulloblastoma. Oxford University Press, 2018. http://dx.doi.org/10.1093/med/9780190696696.003.0006.
Full textDietrich, Franz, and Christian List. Probabilistic Opinion Pooling. Edited by Alan Hájek and Christopher Hitchcock. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780199607617.013.37.
Full textLattman, Eaton E., Thomas D. Grant, and Edward H. Snell. Before the Beamtime. Oxford University Press, 2018. http://dx.doi.org/10.1093/oso/9780199670871.003.0005.
Full textDuggan, John. Candidate Objectives and Electoral Equilibrium. Edited by Donald A. Wittman and Barry R. Weingast. Oxford University Press, 2009. http://dx.doi.org/10.1093/oxfordhb/9780199548477.003.0004.
Full textAnthony, Cullen. Part IV The ICC and its Applicable Law, 30 The Characterization of Armed Conflict in the Jurisprudence of the ICC. Oxford University Press, 2015. http://dx.doi.org/10.1093/law/9780198705161.003.0030.
Full textWalsh, Richard A. “It Has to Be Functional!”. Oxford University Press, 2016. http://dx.doi.org/10.1093/med/9780190607555.003.0026.
Full textBook chapters on the topic "MoS2 characterization"
Sarode, K. M., S. G. Bachhav, U. D. Patil, and D. R. Patil. "Synthesis and Characterization of MoS2-Graphene Nanocomposite." In Techno-Societal 2016, 629–34. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-53556-2_64.
Full textKorn, T., G. Plechinger, S. Heydrich, F. X. Schrettenbrunner, J. Eroms, D. Weiss, and C. Schüller. "Optical Characterization, Low-Temperature Photoluminescence, and Photocarrier Dynamics in MoS2." In Lecture Notes in Nanoscale Science and Technology, 217–36. Cham: Springer International Publishing, 2013. http://dx.doi.org/10.1007/978-3-319-02850-7_8.
Full textWang, Shengkai, and Xiaolei Wang. "MOS Characterizations." In MOS Interface Physics, Process and Characterization, 95–154. Boca Raton: CRC Press, 2021. http://dx.doi.org/10.1201/9781003216285-4.
Full textWang, Shengkai, and Xiaolei Wang. "MOS Processes." In MOS Interface Physics, Process and Characterization, 51–94. Boca Raton: CRC Press, 2021. http://dx.doi.org/10.1201/9781003216285-3.
Full textCristoloveanu, Sorin, and Sheng S. Li. "MOS Transistor Characteristics." In Electrical Characterization of Silicon-on-Insulator Materials and Devices, 209–73. Boston, MA: Springer US, 1995. http://dx.doi.org/10.1007/978-1-4615-2245-4_8.
Full textWang, Shengkai, and Xiaolei Wang. "Introduction." In MOS Interface Physics, Process and Characterization, 1–6. Boca Raton: CRC Press, 2021. http://dx.doi.org/10.1201/9781003216285-1.
Full textWang, Shengkai, and Xiaolei Wang. "Physics of Interface." In MOS Interface Physics, Process and Characterization, 7–50. Boca Raton: CRC Press, 2021. http://dx.doi.org/10.1201/9781003216285-2.
Full textMichael, Christopher, and Mohammed Ismail. "Experimental Process Characterization for MOS Statistical Model." In The Kluwer International Series in Engineering and Computer Science, 51–83. Boston, MA: Springer US, 1993. http://dx.doi.org/10.1007/978-1-4615-3150-0_4.
Full textHirvonen, J.-P., H. Kattelus, I. Suni, J. Likonen, T. R. Jervis, and M. Nastasi. "Sputter Deposition and Characterization of MoSi2/SiC Composite Coatings." In Mechanical Properties and Deformation Behavior of Materials Having Ultra-Fine Microstructures, 469–74. Dordrecht: Springer Netherlands, 1993. http://dx.doi.org/10.1007/978-94-011-1765-4_31.
Full textTack, M., M. H. Gao, C. Claeys, and G. Declerck. "Characterization of Different SOI-MOS Technologies at Cryogenic Temperatures." In ESSDERC ’89, 767–70. Berlin, Heidelberg: Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-52314-4_161.
Full textConference papers on the topic "MoS2 characterization"
Camellini, Andrea, Eugenio Cinquanta, Christian Martella, Carlo Mennucci, Alessio Lamperti, Giulio Cerullo, Giuseppe Della Valle, Alessandro Molle, Francesco Buatier de Mongeot, and Margherita Zavelani-Rossi. "Optical characterization of anisotropic MoS2 nanosheets." In 2017 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC). IEEE, 2017. http://dx.doi.org/10.1109/cleoe-eqec.2017.8087717.
Full textImran, Mohammad, Nahid Chaudhary, Aurangzeb Khurram Hafiz, Bharti Singh, and Manika Khanuja. "CVD synthesis and characterization of ultrathin MoS2 film." In PROCEEDINGS OF INTERNATIONAL CONFERENCE ON RECENT TRENDS IN MECHANICAL AND MATERIALS ENGINEERING: ICRTMME 2019. AIP Publishing, 2020. http://dx.doi.org/10.1063/5.0026128.
Full textMootheri, Vivek, Albert Minj, Goutham Arutchelvan, Alessandra Leonhardt, Inge Asselberghs, Marc Heyns, Iuliana Radu, and Dennis Lin. "Contact Interface Characterization of Graphene contacted MoS2 FETs." In 2021 IEEE International Interconnect Technology Conference (IITC). IEEE, 2021. http://dx.doi.org/10.1109/iitc51362.2021.9537337.
Full textLi Bin, Yang Daheng, Chen Jiuju, Yang Xiaolei, and Meng Qinggang. "Sonochemical preparation and characterization of MoO3 and MoS2 nanoparticles." In 2011 International Conference on Management Science and Industrial Engineering (MSIE). IEEE, 2011. http://dx.doi.org/10.1109/msie.2011.5707604.
Full textRashidifar, Mahsa, Sara Darbari, and Yaser Abdi. "Characterization of humidity sensor based on nickel-MoS2-nickel." In 2020 28th Iranian Conference on Electrical Engineering (ICEE). IEEE, 2020. http://dx.doi.org/10.1109/icee50131.2020.9260786.
Full textJahangir, Ifat, Alina Wilson, A. K. Singh, N. Sbrockey, E. Coleman, G. S. Tompa, and Goutam Koley. "Graphene/InN and Graphene/MoS2 heterojunctions: Characterization and sensing applications." In 2014 IEEE 14th International Conference on Nanotechnology (IEEE-NANO). IEEE, 2014. http://dx.doi.org/10.1109/nano.2014.6968176.
Full textTomar, Rupika Singh, Kajol Taiwade, Javid Ali, Samina Khan, and Fozia Z. Haque. "Synthesis of heterojunction layers of graphene/MoS2 and its characterization." In INTERNATIONAL CONFERENCE ON SUSTAINABLE ENGINEERING AND TECHNOLOGY (ICONSET 2018). Author(s), 2018. http://dx.doi.org/10.1063/1.5079036.
Full textShahi, Simran, Maomao Liu, Hemendra Nath Jaiswal, Licheng Xiao, Sichen Wei, Hyun Kim, Seok Joon Yun, Young Hee Lee, Fei Yao, and Huamin Li. "Field Effect and Raman Characterization of Self-Assembled Mos2 Nanoscrolls." In 2019 Device Research Conference (DRC). IEEE, 2019. http://dx.doi.org/10.1109/drc46940.2019.9046427.
Full textCheah, A. J., W. S. Chiu, P. S. Khiew, S. Radiman, and M. A. A. Hamid. "Synthesis and characterization of visible-active molybdenum disulfide (2H-MoS2) nanospheres." In PROCEEDINGS OF THE 23RD SCIENTIFIC CONFERENCE OF MICROSCOPY SOCIETY MALAYSIA (SCMSM 2014). AIP Publishing LLC, 2015. http://dx.doi.org/10.1063/1.4919168.
Full textVianna, Pilar G., Syed Hamza Safeer, Alexandre S. M. V. Ore, Vanessa O. Gordo, Isabel C. S. Carvalho, Victor Carozo, and Christiano J. S. de Matos. "Synthesis and Characterization of MoS2/WS2 Heterostructures by Second Harmonic Generation." In 2019 SBFoton International Optics and Photonics Conference (SBFoton IOPC). IEEE, 2019. http://dx.doi.org/10.1109/sbfoton-iopc.2019.8910214.
Full textReports on the topic "MoS2 characterization"
Burghaus, U. Characterization of fundamental catalytic properties of MoS2/WS2 nanotubes and nanoclusters for desulfurization catalysis - a surface temperature study. Office of Scientific and Technical Information (OSTI), July 2012. http://dx.doi.org/10.2172/1045023.
Full textMcPherson, Brian, and Vince Matthews. Characterization of Most Promising Sequestration Formations in the Rocky Mountain Region (RMCCS). Office of Scientific and Technical Information (OSTI), September 2013. http://dx.doi.org/10.2172/1163843.
Full textKramer, K. Status Quo of PVT Characterization. Edited by Korbinian Kramer,. IEA SHC Task 60, September 2020. http://dx.doi.org/10.18777/ieashc-task60-2020-0004.
Full textGschwander, Stefan, Ana Lazaro, Monica Delgado, Christoph Rathgeber, Michael Brütting, Stephan Höhlein, Melissa Obermeyer, et al. Summary of Work On development and characterization of improved Materials. IEA SHC Task 58, June 2021. http://dx.doi.org/10.18777/ieashc-task58-2021-0003.
Full textHart, Carl R., D. Keith Wilson, Chris L. Pettit, and Edward T. Nykaza. Machine-Learning of Long-Range Sound Propagation Through Simulated Atmospheric Turbulence. U.S. Army Engineer Research and Development Center, July 2021. http://dx.doi.org/10.21079/11681/41182.
Full textQamhia, Issam, and Erol Tutumluer. Evaluation of Geosynthetics Use in Pavement Foundation Layers and Their Effects on Design Methods. Illinois Center for Transportation, August 2021. http://dx.doi.org/10.36501/0197-9191/21-025.
Full textSinclair, Samantha, and Sandra LeGrand. Reproducibility assessment and uncertainty quantification in subjective dust source mapping. Engineer Research and Development Center (U.S.), August 2021. http://dx.doi.org/10.21079/11681/41523.
Full textSinclair, Samantha, and Sandra LeGrand. Reproducibility assessment and uncertainty quantification in subjective dust source mapping. Engineer Research and Development Center (U.S.), August 2021. http://dx.doi.org/10.21079/11681/41542.
Full textBaral, Aniruddha, Jeffery Roesler, and Junryu Fu. Early-age Properties of High-volume Fly Ash Concrete Mixes for Pavement: Volume 2. Illinois Center for Transportation, September 2021. http://dx.doi.org/10.36501/0197-9191/21-031.
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