Relevant bibliographies by topics / MOSFET

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'MOSFET'

Author: Grafiati
Published: 4 June 2021
Last updated: 25 July 2025

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Journal articles on the topic "MOSFET"

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Gonçalves Filho, Luiz C., and Luiz A. P. Santos. "An electronic dosimeter for diagnostic X-ray beams based on a differential amplifier circuit with MOSFETs." EPJ Web of Conferences 288 (2023): 09001. http://dx.doi.org/10.1051/epjconf/202328809001.

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It is known that the device MOSFET works as a dosimeter in radiation beams for cancer radiotherapy. Basically, the radiation beam generates defects in a way that produces in the MOSFET the variation in its threshold voltage, VT, which is proportional to the accumulated radiation dose. Recently, MOSFETs were also tested under X-ray beams commonly used in the energy range applied to medical diagnoses, which is lower energy than radiotherapy. Indeed, it was already shown that the MOSFET drain current varies with the radiation dose for energies in the range applied to diagnostic radiology. In this
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Chowdhury, Md. Iqbal Bahar. "Verilog-A Implementation of SOI MOSFET-Based Amplifier and Ring Oscillator Circuits." Journal of VLSI Design and Signal Processing 9, no. 1 (2023): 26–33. https://doi.org/10.5281/zenodo.15320070.

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In this work, a single-stage CMOS amplifier circuit and a three-stage CMOS ring oscillator circuit based on silicon-oninsulator-MOSFET (SOI MOSFET) have been implemented in the Cadence environment. In doing so, Verilog-A models of the long-channel (10 µm) SOI-MOSFET (for both NMOS and PMOS) have been utilized because of the unavailability of builtin models for such MOSFETs in the Cadence tools suite. To compare the performance of SOI-MOSFET-based circuits with the bulkMOSFET ones, Verilog-A models for the bulk-MOSFETs are also utilized for a 10 µm long channel. Curve tracer circuit
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Li, Ruizhe. "The advantages and short circuit characteristics of SiC MOSFETs." Applied and Computational Engineering 49, no. 1 (2024): 58–64. http://dx.doi.org/10.54254/2755-2721/49/20241059.

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SiC MOSFETs have exhibited considerable benefits in high-frequency, high-voltage, and high-temperature power electronics applications with outstanding material attributes as a result of the rapid advancement of power electronics technology. SiC MOSFETs slower short-circuit tolerance and faster switching rates provide new issues for the short-circuit prevention technology. In the opening section of the study, Si and SiC MOSFETs are compared and evaluated using various models and parametric factors. It has been demonstrated that SiC MOSFETs outperform Si MOSFETs in a variety of conditions and ap
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Kaur Sidhu, Rajdevinder, Jagpal Singh Ubhi, Alpana Agarwal, and Balwinder Raj. "Design and Comparative Analysis of Silicon and GaAs MOSFET for Low Power Applications." Journal of Nanoelectronics and Optoelectronics 18, no. 8 (2023): 915–23. http://dx.doi.org/10.1166/jno.2023.3460.

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The demand for low power consumption in modern electronic devices has led to the development of various technologies, including usage of different materials such as Si and GaAs. In this paper, we present a design and comparative analysis of Si and GaAs MOSFETs for low power applications. The analysis includes the electrical characteristics, performance parameters, and power consumption of both devices. The Si MOSFET and GaAs MOSFET are simulated and analyzed using TCAD tools, and the results are compared. The simulation results show that the GaAs MOSFET has a higher transconductance (gm) compa
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Luo, Qixiao. "Research on the advantages and development status of new material MOSFET." Highlights in Science, Engineering and Technology 33 (February 21, 2023): 210–18. http://dx.doi.org/10.54097/hset.v33i.5313.

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When using MOSFETs, in order to improve the operating speed, so that higher power density and lower functional consumption can be obtained in the process, researchers have explored in multiple dimensions. In this paper, three popular new material MOSFETs are mainly explained, including SiC MOSFET, GaN MOSFET and graphene MOSFET. This paper introduces their advantages and their development status, so as to compare the advantages of new materials. In conclusion, By adding materials, the electron mobility and stability of the FET can be increased in some situation. The research in this paper will
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Chek Yee, Ooi, Mok Kai Ming, and Wong Pei Voon. "DEVICE AND CIRCUIT LEVEL SIMULATION STUDY OF NOR GATE LOGIC FAMILIES DESIGNED USING NANO-MOSFETs." Platform : A Journal of Science and Technology 4, no. 1 (2021): 73. http://dx.doi.org/10.61762/pjstvol4iss1art11064.

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The investigation of silicon-based nano-MOSFETs logic circuits is helpful to gain more comprehensive knowledge about nanoscale transistors. Therefore, a simulation study has been performed on four logic families of two inputs NOR gate logic circuits, namely (i) nano-CMOS NOR gate, (ii) nano-MOSFET loaded n-type nano-MOSFET NOR gate, (iii) 733.8 Ω resistive loaded nano-MOSFET NOR gate, and finally (iv) pseudo-n-type nano-MOSFET NOR gate. The nano-MOSFET technology node studied in this paper is 10 nm. Device simulation is done using an online NanoMOS simulator, whereas circuit simulation is carr
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Albrecht, Matthaeus, Tobias Erlbacher, Anton J. Bauer, and Lothar Frey. "Potential of 4H-SiC CMOS for High Temperature Applications Using Advanced Lateral p-MOSFETs." Materials Science Forum 858 (May 2016): 821–24. http://dx.doi.org/10.4028/www.scientific.net/msf.858.821.

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In this work, the impact of the n-well doping concentration on the channel mobility and threshold voltage of p-MOSFETs and their applications in CMOS-devices is evaluated. For this purpose lateral p-channel MOSFETs with different channel lengths (L = 800 μm, 10 μm, 5 μm, and 3 μm) and doping concentrations (ND = 1015 cm-3 and 8·1015 cm-3) were fabricated and the respective field-effect mobility was extracted from the transfer-characteristics. Comparable to n-MOSFETs the mobility of p-MOSFETs was found to be the highest for the lowest doping concentration in the channel and the absolute value o
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Yoshioka, Hironori, Junji Senzaki, Atsushi Shimozato, Yasunori Tanaka, and Hajime Okumura. "Characterization of Interface State Density from Subthreshold Slope of MOSFETs at Low Temperatures (≥ 10 K)." Materials Science Forum 821-823 (June 2015): 745–48. http://dx.doi.org/10.4028/www.scientific.net/msf.821-823.745.

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We have evaluated interface state density (DIT) for EC−ET > 0.00 eV from the subthreshold slope deterioration of MOSFETs at low temperatures. We have compared two n-channel MOSFETs on the C- and a-faces with the gate oxide formed by pyrogenic oxidation followed by annealing in H2. The peak field-effect mobility (µFE,peak) for the C-face MOSFET was 57 cm2V-1s-1 at 300 K, which is lower than the half of 135 cm2V-1s-1 for the a-face MOSFET. We have shown that DIT very close to EC can well explain why µFE for C-face MOSFETs is lower than that for a-face MOSFETs. The value of DIT at 0.00 eV corr
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Che, Haoming. "Simulation study on dynamic characteristics of SiC MOSFET." Theoretical and Natural Science 5, no. 1 (2023): 805–14. http://dx.doi.org/10.54254/2753-8818/5/20230507.

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In this paper, the third generation power MOSFET is introduced, and the physical model based on silicon based MOSFET is improved for SiC MOSFET, and the commercial planar gate and trench gate 1.2kV SiC MOSFET are simulated. The accuracy of physical modals is tested by comparing the static characteristics with commercial ones. The dynamic characteristics of two MOSFETs are simulated by inductively clamped double pulse circuit, and the circuit parameters are analyzed according to the static characteristics of the devices. The switching loss of the two MOSFETs is calculated and compared by using
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Ahn, Tae Jun, and Yun Seop Yu. "Interface Trap Charge Effects of Monolithic 3D Junctionless Field-Effect Transistors (JLFET) Inverter." Journal of Nanoscience and Nanotechnology 21, no. 8 (2021): 4252–57. http://dx.doi.org/10.1166/jnn.2021.19388.

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We investigated the effect of the interface trap charge in a monolithic three-dimensional inverter structure composing of JLFETs (M3DINV-JLFET), using the interface trap charge distribution extracted in the previous study. The effect of interface trap charge was compared with a conventional M3DINV composing of MOSFETs (M3DINV-MOSFETs) by technology computer-aided design simulation. When the interface trap charges in both M3DINV-JLFET and M3DINV-MOSFET are added, the threshold voltages, on-current levels, and subthreshold swings of both JLFETs and MOSFETs increase, decrease, and increase, respe
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Dissertations / Theses on the topic "MOSFET"

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Ngabonziza, Nyampame Christian. "Drivning av Likströmsmotor med MOSFET : DC Motor control by MOSFET." Thesis, Linnéuniversitetet, Institutionen för datavetenskap, fysik och matematik, DFM, 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:lnu:diva-11294.

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Detta projekt är ett examensarbete för kandidatexamen som är obligatorisk för alla studenter. För att ta ut examen måste jag lämna en skriftlig rapport om vad jag har gjort. Redovisa simuleringar och mätningar på olika kretsar.  I mitt fall var jag intresserad på att studera hur varvtalet på en likströmsmotor kan regleras med hjälp av olika metoder.  Detta är mycket utmanande för mig eftersom jag inte har sett så många lösningar på detta problem.  Jag kommer att använda kunskap, teknik och komponenter från Kraftelektronik för att utföra mitt arbete.  Det blir mycket intressant att med dagens u
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Lui, Jerome C. (Jerome Chun Lung). "Automated MOSFET parameter extraction." Thesis, Massachusetts Institute of Technology, 1995. http://hdl.handle.net/1721.1/36583.

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Major, Jan. "Počítačové modelování MOSFET tranzistoru." Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2011. http://www.nusl.cz/ntk/nusl-219148.

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Work is focused on computer modeling of PN junction and MOSFET transistor in the program COMSOL Multiphysics and in program TiberCAD. The text is discussed on the drift and diffusion in semiconductors. Also shown is a method of modeling the PN junction and MOSFET transistor in the programs and compare models.
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Munteanu, Daniela. "Modélisation et caractérisation des transistors SOI : du pseudo-MOSFET au MOSFET submicronique ultramince." Grenoble INPG, 1999. http://www.theses.fr/1999INPG0104.

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L'objet de cette these est de contribuer a l'analyse et a l'optimisation des materiaux soi et au developpement de modeles physiques et de methodes de caracterisation adaptees aux dispositifs soi. Dans le premier chapitre, nous rappelons l'interet de la technologie soi, ses avantages et ses inconvenients par rapport a la technologie si massif. Le deuxieme chapitre est consacre a la caracterisation du materiau, en utilisant la technique -mosfet, methode tres appropriee pour comparer la qualite et les parametres electriques des differentes structures soi. Une analyse approfondie de la validite de
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Shah, Nirav. "Stress modeling of nanoscale MOSFET." [Gainesville, Fla.] : University of Florida, 2005. http://purl.fcla.edu/fcla/etd/UFE0012221.

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Prokhorov, Andrey, and Olesya Gerzheva. "Model of MOSFET in Delphi." Thesis, Högskolan i Halmstad, Sektionen för Informationsvetenskap, Data– och Elektroteknik (IDE), 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:hh:diva-14209.

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In modern times the increasing complexity of transistors and their constant decreasingsize require more effective techniques to display and interpret the processes that are inside of devices. In this work, we are modeling a two‐dimensional n‐MOSFET with a long channeland uniformly doped substrate. We assume that this device is a large geometry device so that short‐channel and narrow‐width effects can be neglected. As a result of the thesis, a demonstration program was built. In this executable file, the user can choose parameters of the MOSFET‐model: drain and gate voltage, and different geome
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Chen, Max Chuan. "Modeling of KTH UTBSOI MOSFET." Thesis, KTH, Skolan för informations- och kommunikationsteknik (ICT), 2014. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-177444.

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Semiconductor devices such as transistors and integrated circuits are everywhere in our daily lives, it's one of the most important foundations of today's information society. Nanotechnology enables the production of lighter, faster and more efficient components and systems. Manufacturing technology has improved considerably over the past 40 years, but in recent years, the bulk transistors have reaching the limits of Moore’s law as the size shrinking too few tens of nanometers. The main difficulties are to reduce the power consumption, improve the speed meanwhile maintain the low manufacturing
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李華剛 and Eddie Herbert Li. "Narrow-channel effect in MOSFET." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 1990. http://hub.hku.hk/bib/B31209312.

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Wang, Yao. "MOSFET strain sensor for microcantilevers." Thesis, Queen's University Belfast, 2014. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.675436.

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Microcantilever structure was used to design and fabricate strain sensors. P-channel MOSFETs were designed and fabricated for strain sensors as hole mobility under uniaxial stress has higher mobility enhancement than that of electron mobility under either uniaxial stress or biaxial stress. For MOSFET sensors on microcantilevers, anchor area is the traditional position for sensors due to its highest stress. The aim of this research is to investigate the assumption of biaxial stress at the anchor area which makes the anchor location less sensitive. COMSOL software was employed to simulate stress
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Araújo, Guido Costa Souza de 1962. "Simulação bidimensional de dispositivos MOSFET." [s.n.], 1990. http://repositorio.unicamp.br/jspui/handle/REPOSIP/261310.

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Orientador : Bernard Waldman<br>Dissertação (mestrado) - Universidade Estadual de Campinas, Faculdade de Engenharia Eletrica<br>Made available in DSpace on 2018-07-13T21:47:06Z (GMT). No. of bitstreams: 1 Araujo_GuidoCostaSouzade_M.pdf: 7097802 bytes, checksum: 3989d5131b3e9436f6f55fc6d620a10e (MD5) Previous issue date: 1990<br>Resumo: Com a drástica diminuição das dimensões nas novas gerações de transistores MOS VLSI, um aumento considerável de efeitos dimensionais no comportamento destes dispositivos tem surgido. Isto traz como conseqüência imediata, a impossibilidade de utilização dos mod
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Books on the topic "MOSFET"

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Taylor, B. E. Power Mosfet design. Wiley, 1993.

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Motorola. Power MOSFET transistor data. Motorola, 1988.

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Baliga, B. Jayant. Advanced Power MOSFET Concepts. Springer US, 2010. http://dx.doi.org/10.1007/978-1-4419-5917-1.

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Motorola. Power mosfet transistor data. 4th ed. Motorola, 1989.

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Warner, R. M. MOSFET theory and design. Oxford University Press, 1999.

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Baliga, B. Jayant. Advanced power MOSFET concepts. Springer, 2010.

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Cheng, Yuhua. MOSFET modeling & BSIM3 user's guide. Kluwer Academic Publishers, 2002.

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Kulkarni, Shukla Purushottam. Subthreshold modelling of the MOSFET. University of Birmingham, 1995.

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Cheng, Yuhua. MOSFET modeling & BSIM3 user's guide. Kluwer Academic Publishers, 1999.

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Chenming, Hu, ed. MOSFET modeling & BSIM3 user's guide. Kluwer Academic Publishers, 1999.

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Book chapters on the topic "MOSFET"

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Di Paolo Emilio, Maurizio. "MOSFET." In Microelectronics. Springer International Publishing, 2016. http://dx.doi.org/10.1007/978-3-319-22545-6_3.

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Cumberbatch, Ellis. "MOSFET Modelling." In Proceedings of the Second European Symposium on Mathematics in Industry. Springer Netherlands, 1988. http://dx.doi.org/10.1007/978-94-009-2979-1_10.

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Schroeder, Dietmar. "MOSFET Gate." In Computational Microelectronics. Springer Vienna, 1994. http://dx.doi.org/10.1007/978-3-7091-6644-4_8.

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Robins, I. "MOSFET devices." In Chemical Sensors. Springer Netherlands, 1988. http://dx.doi.org/10.1007/978-94-010-9154-1_10.

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Uyemura, John P. "MOSFET Characteristics." In Circuit Design for CMOS VLSI. Springer US, 1992. http://dx.doi.org/10.1007/978-1-4615-3620-8_2.

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Nguyen, Cam, and Youngman Um. "Switching MOSFET." In SpringerBriefs in Electrical and Computer Engineering. Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-46248-2_4.

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Ramshaw, R. S. "The MOSFET." In Power Electronics Semiconductor Switches. Springer US, 1993. http://dx.doi.org/10.1007/978-1-4757-6219-8_6.

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Neacşu, Dorin O. "Power MOSFET." In Automotive Power Systems. CRC Press, 2020. http://dx.doi.org/10.1201/9781003053231-10.

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Xanthakis, John P. "The MOSFET." In Electronic Conduction. CRC Press, 2020. http://dx.doi.org/10.1201/9780429506444-7.

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Gimenez, Salvador Pinillos, and Egon Henrique Salerno Galembeck. "The MOSFET." In Differentiated Layout Styles for MOSFETs. Springer International Publishing, 2023. http://dx.doi.org/10.1007/978-3-031-29086-2_4.

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Conference papers on the topic "MOSFET"

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Baker, Nick, Francesco Iannuzzo, and Szymon Bęczkowski. "Multi-Chip Temperature Imbalance of SiC MOSFETs in MOSFET vs. Body-Diode Conduction." In 2025 IEEE International Workshop on Integrated Power Packaging (IWIPP). IEEE, 2025. https://doi.org/10.1109/iwipp61784.2025.10971548.

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Kong, Moufu, Shurui Li, Hongfei Deng, Bo Yi, Hongqiang Yang, and Sen Gong. "Comparative Study on Reliability of Conventional SiC MOSFET and JBS Integrated SiC MOSFET." In 2024 IEEE 17th International Conference on Solid-State & Integrated Circuit Technology (ICSICT). IEEE, 2024. https://doi.org/10.1109/icsict62049.2024.10831619.

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Liu, Xianda, Changming Chen, Tingting Fan, and Song Ye. "UIS Characterization of MOSFET Devices." In 2024 4th International Conference on Electronic Information Engineering and Computer (EIECT). IEEE, 2024. https://doi.org/10.1109/eiect64462.2024.10865998.

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Li, Linze, Chunguang Ren, and Zhichao Ma. "A Series Structure of MOSFET." In 2024 4th International Conference on Energy Engineering and Power Systems (EEPS). IEEE, 2024. https://doi.org/10.1109/eeps63402.2024.10804464.

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Xiao, Deyuan, Gary Chen, Roger Lee, et al. "PSDG MOSFET." In 2006 International Symposium on VLSI Technology, Systems, and Applications. IEEE, 2006. http://dx.doi.org/10.1109/vtsa.2006.251068.

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Nakachai, Rattapong, Toempong Phetchakul, Sawatdipong Poonsawat, and Amporn Poyai. "Simulation of MOSFET as horizontal magnetic mosfet (MAGFET)." In 2017 2nd International Conference on Frontiers of Sensors Technologies (ICFST). IEEE, 2017. http://dx.doi.org/10.1109/icfst.2017.8210464.

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Tani, Kazuki, Kenji Hara, Tomoyasu Furukawa, Kosuke Tsunoda, and Tomoyuki Utsumi. "Cascade-Connected Low-Voltage MOSFETs Operating as One High-Voltage MOSFET\." In 2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD). IEEE, 2024. http://dx.doi.org/10.1109/ispsd59661.2024.10579594.

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Gokirmak, Ali. "Accumulated Body MOSFET." In 2006 64th Device Research Conference. IEEE, 2006. http://dx.doi.org/10.1109/drc.2006.305126.

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Fauzan, M. N. Z. A., I. Saad, R. Ismail, et al. "Numerical Simulation Characterization of 50nm MOSFET Incorporating Dielectric Pocket (DP-MOSFET)." In INTERNATIONAL CONFERENCE ON ADVANCEMENT OF MATERIALS AND NANOTECHNOLOGY: (ICAMN—2007). AIP, 2010. http://dx.doi.org/10.1063/1.3377887.

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Cha, Kyuhyun, Jongwoon Yoon, Jinhee Cheon, and Kwangsoo Kim. "The limitation of the Split-Gate MOSFET(SG-MOSFET) at 3.3kV." In 2021 International Conference on Electronics, Information, and Communication (ICEIC). IEEE, 2021. http://dx.doi.org/10.1109/iceic51217.2021.9369734.

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Reports on the topic "MOSFET"

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Hu, Chenming. Dynamic Threshold-Voltage MOSFET. Defense Technical Information Center, 1999. http://dx.doi.org/10.21236/ada368429.

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Zborowski, Jaroslaw T. GaAs-Based Mosfet Employing Epitaxial Al2O3. Defense Technical Information Center, 1998. http://dx.doi.org/10.21236/ada363849.

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Sbrockey, Nick M., Gary S. Tompa, Michael G. Spencer, and Chandra M. V. S. Chandrashekhar. SiC Power MOSFET with Improved Gate Dielectric. Office of Scientific and Technical Information (OSTI), 2010. http://dx.doi.org/10.2172/1067486.

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Wallace, Robert M. Device Performance and Reliability Improvements of AlGaBN/GaN/Si MOSFET. Defense Technical Information Center, 2016. http://dx.doi.org/10.21236/ada636905.

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Zhou, Sida. Mobility Modeling and Simulation of SOI Si1-x Gex p-MOSFET. Portland State University Library, 2000. http://dx.doi.org/10.15760/etd.6830.

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Chow, Louis C., and Robert J. Mauriello. Utilizing ISE-TCAD Software to Simulate Power MOSFET Devices Operating at Cryogenic Temperatures. Defense Technical Information Center, 2001. http://dx.doi.org/10.21236/ada387644.

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Bloomfield, P. Materials preparation and fabrication of pyroelectric polymer/silicon MOSFET detector arrays. Final report. Office of Scientific and Technical Information (OSTI), 1992. http://dx.doi.org/10.2172/106639.

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Thomas, Michael. Software Development for Data Visualization and Analysis of PN-Diodes & MOSFET Devices. Office of Scientific and Technical Information (OSTI), 2022. http://dx.doi.org/10.2172/1880917.

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Wallace, Robert M. Device Performance and Reliability Improvements of AlGaN/GaN/Si MOSFET Using Defect-Free Gate Recess and Laser Annealing. Defense Technical Information Center, 2015. http://dx.doi.org/10.21236/ada621256.

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เฉลิมติระกูล, เกรียงศักดิ์, มนตรี สวัสดิ์ศถุงฆาร, บรรยง โตประเสริฐพงศ์ та ยุทธนา กุลวิทิต. โครงการวิจัยการวิเคราะห์สเตทระหว่างผิวของสิ่งประดิษฐ์สารกึ่งตัวนำ. จุฬาลงกรณ์มหาวิทยาลัย, 1987. https://doi.org/10.58837/chula.res.1987.23.

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จุดประสงค์ของโครงการวิจัยนี้ เพื่อศึกษาและวิเคราะห์ความหนาแน่นของสเตทระหว่างผิวของสิ่งประดิษฐ์สารกึ่งตัวนำ โดยเฉพาะอย่างยิ่งของตัวเก็บประจุ MOS โดยการวัดลักษระสมบัติความจุไฟฟ้า-แรงดันไฟฟ้าของตัวเก็บประจุ MOS ที่สร้างขึ้น การวัดความจุไฟฟ้า-แรงดันนี้จะทำบนระบบเครื่องมือวัดโดยอัตโนมัติที่ทำขึ้นมา ค่าความหนาแน่นของประจุระหว่างผิวและข้อมูลอื่น ๆ ที่เกี่ยวข้องจะถูกคำนวณมาจากเคิร์ฟความจุไฟฟ้าแรงดันที่วัดได้จากการทดลอง ค่าที่คำนวณได้เหล่านี้จะมีประโยชน์โดยเป็นข้อมูลป้อนกลับเข้าไปเพื่อปรับปรุงคุรภาพของตัวเก็บประจุ MOS ให้ดีขึ้น และยังเป็นประโยชน์ต่อการวิจัยและพัฒนาทรานซิสเตอร์ชนิด MOSFET บนสารซิลิกอนอี
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