Relevant bibliographies by topics / MOSFET model

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'MOSFET model'

Author: Grafiati
Published: 4 June 2021
Last updated: 18 February 2022

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Journal articles on the topic "MOSFET model"

1

LIU, WEIDONG, and CHENMING HU. "BSIM3V3 MOSFET MODEL." International Journal of High Speed Electronics and Systems 09, no. 03 (September 1998): 671–701. http://dx.doi.org/10.1142/s0129156498000294.

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The BSIM3v3 compact MOSFET model is reviewed. It is a physics-based model that is accurate, smooth, continuous, scalable, predictive and computationally robust over different regions of operation and a wide geometry range. BSIM3v3 considers all major physical effects in deep submicron MOSFETs, making it a good base for future sub-0.1m device models and for statistical circuit designs. A key feature of the model lies in its thorough, accurate and functional mathematical representation of MOS device physics, which has made BSIM3v3 selected by an international consortium of semiconductor companies as the first industry standard MOSFET model.
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Ejury, Jens. "Advanced Thermal Simulation Model for Power MOSFETs." International Symposium on Microelectronics 2013, no. 1 (January 1, 2013): 000598–603. http://dx.doi.org/10.4071/isom-2013-wa64.

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Modern Power MOSFETs are widely used for high efficiency SMPS applications. Also, they provide very low on-resistance which reduces conduction losses in Oring or eFuse applications. These applications as well as others have transition states in which they drive the MOSFET in linear mode operation during turn-on and turn-off events respectively. The high cell density in modern Power MOSFETs provokes uneven current distribution in linear mode operation which locally stresses certain cell areas more than others. To prevent destruction, the SOA of these MOSFETs has a thermal limit line boundary imposed. With existing L3 MOSFET models it is possible to simulate temperature rise and power loss of the entire MOSFET. However, the local heating effect is not represented in this model. Here, a wrapper is being introduced. It converts a standard L3-model into a model that incorporates a dynamic representation of the entire SOA diagram. The temperature rise follows the hottest cell so that simulations in linear mode become a valid way to predict the highest junction temperature. The limitations of this approach will be outlined.
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Wu, Li-Feng, Yong Guan, Xiao-Juan Li, and Jie Ma. "Anomaly Detection and Degradation Prediction of MOSFET." Mathematical Problems in Engineering 2015 (2015): 1–5. http://dx.doi.org/10.1155/2015/573980.

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The MOSFET is an important power electronic transistor widely used in electrical systems. Its reliability has an effect on the performance of systems. In this paper, the failure models and mechanisms of MOSFETs are briefly analyzed. The on-resistanceRonis the key failure precursor parameter representing the degree of degradation. Based on the experimental data, a nonlinear dual-exponential degradation model for MOSFETs is obtained. Then, we present an approach for MOSFET degradation state prediction using a strong tract filter based on the obtained degradation model. Lastly, the proposed algorithm is shown to perform effectively on experimental data. Thus, it can provide early warning and enhance the reliability of electrical systems.
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Singh, Ajay Kumar. "Modeling of electrical behavior of undoped symmetric Double-Gate (DG) MOSFET using carrier-based approach." COMPEL - The international journal for computation and mathematics in electrical and electronic engineering 38, no. 2 (March 4, 2019): 815–28. http://dx.doi.org/10.1108/compel-08-2018-0327.

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Purpose This study aims to develop a compact analytical models for undoped symmetric double-gate MOSFET based on carrier approach. Double-Gate (DG) MOSFET is a newly emerging device that can potentially further scale down CMOS technology owing to its excellent control of short channel effects, ideal subthreshold slope and free dopant-associated fluctuation effects. DG MOSFET is of two types: the symmetric DG MOSFET with two gates of identical work functions and asymmetric DG MOSFET with two gates of different work functions. To fully exploit the benefits of DG MOSFETs, the body of DG MOSFETs is usually undoped because the undoped body greatly reduces source and drain junction capacitances, which enhances the switching speed. Highly accurate and compact models, which are at the same time computationally efficient, are required for proper modeling of DG MOSFETs. Design/methodology/approach This paper presents a carrier-based approach to develop a compact analytical model for the channel potential, threshold voltage and drain current of a long channel undoped symmetric DG MOSFETs. The formulation starts from a solution of the 2-D Poisson’s equation in which mobile charge term has been included. The 2-D Poisson’s equation in rectangular coordinate system has been solved by splitting the total potential into long-channel (1-D Poisson’s equation) and short-channel components (remnant 2-D differential equation) in accordance to the device physics. The analytical model of the channel potential has been derived using Boltzmann’s statistics and carrier-based approach. Findings It is shown that the metal gate suppresses the center potential more than the poly gate. The threshold voltage increases with increasing metal work function. The results of the proposed models have been validated against the Technology Computer Aided Design simulation results with close agreement. Originality/value Compact Analytical models for undoped symmetric double gate MOSFETs.
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Petrosyants, Konstantin O., Igor A. Kharitonov, and Lev M. Sambursky. "Hardware-Software Subsystem for MOSFETs Characteristic Measurement and Parameter Extraction with Account for Radiation Effects." Advanced Materials Research 718-720 (July 2013): 750–55. http://dx.doi.org/10.4028/www.scientific.net/amr.718-720.750.

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Hardware-software subsystem designed for MOSFETs characteristic measurement and SPICE model parameter extraction taking into account radiation effects is presented. Parts of the system are described. The macromodel approach is used to account for radiation effects in MOSFET modeling. Particularities of the account for radiation effects in MOSFETs within the measurement and model parameter extraction procedures are emphasized. Application of the subsystem is illustrated on the example of radiation hardened 0.25 μm SOI MOSFET test structures.
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Hebali, Mourad, Menaouer Bennaoum, Mohammed Berka, Abdelkader Baghdad Bey, Mohammed Benzohra, Djilali Chalabi, and Abdelkader Saidane. "A high electrical performance of DG-MOSFET transistors in 4H-SiC and 6H-SiC 130 nm technology by BSIM3v3 model." Journal of Electrical Engineering 70, no. 2 (April 1, 2019): 145–51. http://dx.doi.org/10.2478/jee-2019-0021.

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Abstract In this paper, the electrical performance of double gate DG-MOSFET transistors in 4H-SiC and 6H-SiC technologies have been studied by BSIM3v3 model. In which the I–V and gm–V characteristics and subthreshold operation of the DGMOSFET have been investigated for two models (series and parallel) based on equivalent electronic circuits and the results so obtained are compared with the single gate SG-MOSFET, using 130 nm technology and OrCAD PSpice software. The electrical characterization of DG-MOSFETs transistors have shown that they operate under a low voltage less than 1.2 V and low power for both models like the SG-MOSFET transistor, especially the series DG-MOSFET transistor is characterized by an ultra low power. The different transistors are characterized by an ultra low OFF leakage current of pA order, very high ON/OFF ratio of and high subthreshold slope of order 0.1 V/dec for the transistors in 6H-SiC and 4H-SiC respectively. These transistors also proved higher transconductance efficiency, especially the parallel DG-MOSFET transistor.
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Potbhare, Siddharth, Neil Goldsman, Gary Pennington, Aivars J. Lelis, and J. M. McGarrity. "Time Dependent Trapping and Generation-Recombination of Interface Charges: Modeling and Characterization for 4H-SiC MOSFETs." Materials Science Forum 556-557 (September 2007): 847–50. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.847.

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SiC MOSFETs have very large interface trap densities which degrade device performance. The effect of traps on inversion layer mobility and inversion charge concentration has been studied, and mobility models suitable for inclusion in Drift-Diffusion simulators have been developed for steady state operation of SiC MOSFET devices. Here, we attempt to model the transient behavior of SiC MOSFETs, and at the same time, extract the time constants for the filling and emptying of interface traps. As compared to the inversion layer, interface traps in SiC MOSFETs are slow in reacting to change in gate bias. So, at the positive edge of a gate pulse, we see a large current in the MOSFET, which then decays slowly to the steady state value as the interface traps fill up. We have developed a generation/recombination model for minority carriers in a SiC MOSFET based on the Shockley-Read-Hall recombination model for electrons and holes. In our model, the generation/recombination takes place between minority carriers in the inversion layer, and the traps at the SiC-SiO2 interface. Comparing our simulated current vs. time curves to experiment, we have been able to extract time constants for the filling and emptying of traps at the SiC-SiO2 interface.
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Chaudhry, Amit, and Nath Roy. "A comparative study of hole and electron inversion layer quantization in MOS structures." Serbian Journal of Electrical Engineering 7, no. 2 (2010): 185–93. http://dx.doi.org/10.2298/sjee1002185c.

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In this paper, an analytical model has been developed to study inversion layer quantization in nanoscale Metal Oxide Semiconductor Field Effect Oxide p-(MOSFET). n-MOSFETs have been studied using the variation approach and the p-MOSFETs have been studied using the triangular well approach. The inversion charge density and gate capacitance analysis for both types of transistors has been done. There is a marked decrease in the inversion charge density and the capacitance of the p-MOSFET as compared to n-MOSFETs. The results are compared with the numerical results showing good agreement.
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Manzoor, Sadia, Nissar Mohammad Karim, and Norhayati Soin. "Analyzing p-MOSFET Lifetime by Employing R-D Model & MOS Device Theory." Applied Mechanics and Materials 229-231 (November 2012): 1626–29. http://dx.doi.org/10.4028/www.scientific.net/amm.229-231.1626.

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For CMOS circuitry the models which are able to determine the reliability of the components and the methods which lead them to the degradation of the reliability issues are very important. Negative bias temperature instability (NBTI) is a critical issue for the p-MOSFETs. It causes, shifting of drive current and threshold voltage of P-MOSFET. Till date many models capable of simulating various features of the NBTI degradation have been proposed by researchers. Reaction Diffusion (R-D) model is notable among them. This paper demonstrates a new approach which analyzes the combination of R-D model and transistor theories. To do so, we analytically correlated R-D model and device theory. The analysis shows the lifetime estimation for p-MOSFET device with respect to drain current.
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zaman, Haider, Xiancheng Zheng, Husan Ali, Shahbaz Khan, and Xiaohua Wu. "Reliability Modeling of SiC-Based Multiphase Synchronous Boost Converter." Journal of Circuits, Systems and Computers 28, no. 02 (November 12, 2018): 1950033. http://dx.doi.org/10.1142/s0218126619500336.

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Despite attractive thermal and electrical characteristics, wide band-gap semiconductor devices such as SiC MOSFET have struggled to penetrate in aircraft applications because of reliability issues in earlier releases. The second and third generation SiC MOSFETs have achieved improved reliability using high quality oxides and innovative fabrication process. This paper presents a failure rate model for SiC MOSFET based on the accelerated test data at a given operating condition. The proposed model enables the system level reliability analysis of second generation SiC MOSFET-based converters. The reliability of SiC two-phase synchronous boost converter has been evaluated at two different operating conditions: 10 and 16 A load condition. To predict the life time of the converter even after a chain of component failures, Markov’s reliability model of the converter is developed. The state transition probabilities and mean time to failure (MTTF) of SiC converter are compared against its Si counterpart which shows that second generation SiC MOSFETs are for aircraft applications with high reliability.
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Dissertations / Theses on the topic "MOSFET model"

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Prokhorov, Andrey, and Olesya Gerzheva. "Model of MOSFET in Delphi." Thesis, Högskolan i Halmstad, Sektionen för Informationsvetenskap, Data– och Elektroteknik (IDE), 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:hh:diva-14209.

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In modern times the increasing complexity of transistors and their constant decreasingsize require more effective techniques to display and interpret the processes that are inside of devices. In this work, we are modeling a two‐dimensional n‐MOSFET with a long channeland uniformly doped substrate. We assume that this device is a large geometry device so that short‐channel and narrow‐width effects can be neglected. As a result of the thesis, a demonstration program was built. In this executable file, the user can choose parameters of the MOSFET‐model: drain and gate voltage, and different geometrical parameters of the device (junction depth and effective channel length). In the advanced regime of the program, the user can also specify the model re‐calculation parameter, doping concentration in n+ and bulk regions. The program shows the channel between the source and drain region with surface diagrams of carrier density and potential energy as an output. It is possible to save all calculated results to a file and process it in any other program, for example, plot graphics in Matlab or Matematica. The model can be used in lectures that are related to semiconductor physics in order to explain the basic working mechanisms of MOSFETs as well as for further detailed analysis of the processes in MOSFETs. It is possible to use our modeling techniques to rebuild the model in another computer language, or even to build other models of transistors, performing similar calculations and approximations. It is possible to download the executable file of the model here: http://studentdevelop.com/projects/MOSFET_model.zip
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Budihardjo, Irwan Kukuh. "A charge based power MOSFET model /." Thesis, Connect to this title online; UW restricted, 1995. http://hdl.handle.net/1773/5975.

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SUNDARAM, KARTHIK. "A DYNAMIC MOSFET MODEL IN VHDL-AMS." University of Cincinnati / OhioLINK, 2006. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1154637877.

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NEDELJKOVIC, SONJA R. "PARAMETER EXTRACTION AND DEVICE PHYSICS PROJECTIONS ON LATERAL LOW VOLTAGE POWER MOSFET CONFIGURATIONS." University of Cincinnati / OhioLINK, 2001. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1005163403.

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Bordelon, John H. "A large-signal model for the RF power MOSFET." Diss., Georgia Institute of Technology, 1999. http://hdl.handle.net/1853/15048.

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Menberu, Beniyam. "Analysis of hot-carrier AC lifetime model for MOSFET." Thesis, Massachusetts Institute of Technology, 1996. http://hdl.handle.net/1721.1/39386.

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Yoon, Kwang Sub. "A precision analog small-signal model for submicron MOSFET devices." Diss., Georgia Institute of Technology, 1990. http://hdl.handle.net/1853/14935.

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Tuladhar, Looja R. "Resonant Power MOSFET Driver for LED Lighting." Youngstown State University / OhioLINK, 2009. http://rave.ohiolink.edu/etdc/view?acc_num=ysu1264709029.

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GURUMURTHY, ARAVIND. "COMPARISON OF BEHAVIOR OF MOSFET TRANSISTORS DESCRIBED IN HARDWARE DESCRIPTION LANGUAGES." University of Cincinnati / OhioLINK, 2006. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1141363591.

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Dalin, Johan. "Fabrication and characterisation of a novel MOSFET gas sensor." Thesis, Linköping University, Department of Electrical Engineering, 2002. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-1292.

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A novel MOSFET gas sensor for the investigation has been developed. Its configuration resembles a"normally on"n-type thin-film transistor (TFT) with a gas sensitive metal oxide as a channel. The device used in the experiments only differs from common TFTs in the gate configuration. In order to allow gas reactions with the SnO2-surface, the gate is buried under the semiconducting layer. Without any gate voltage, the device works as a conventional metal oxide gas sensor. Applied gate voltages affect the channel carrier concentration and surface potential of the metal oxide, thus causing a change in sensitivity. The results of the gas measurements are in accordance with the electric adsorption effect, which was postulated by Fedor Wolkenstein 1957, and arises the possibility to operate a semiconductor gas sensor at relatively low temperatures and, thereby, be able to integrate CMOS electronics for processing of measurements at the same chip.

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Books on the topic "MOSFET model"

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Arora, Narain. MOSFET Models for VLSI Circuit Simulation. Vienna: Springer Vienna, 1993. http://dx.doi.org/10.1007/978-3-7091-9247-4.

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Bhattacharyya, A. B. Compact MOSFET models for VSLI design. Singapore: Wiley, 2009.

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Arora, Narain. MOSFET Models for VLSI Circuit Simulation: Theory and Practice. Vienna: Springer Vienna, 1993.

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Arora, N. MOSFET models for VLSI circuit simulation: Theory and practice. Wien: Springer-Verlag, 1993.

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Cherem, Schneider Márcio, ed. MOSFET modeling for circuit analysis and design. Singapore: World Scientific, 2007.

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Jürgen, Mattausch Hans, and Ezaki Tatsuya, eds. The physics and modeling of MOSFETS: Surface-potential model HiSIM. Singapore: World Scientific, 2008.

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Im, Kang-tʻaek. Saeroun Nambuk hyŏmnyŏk model ŭi mosaek: Chisokchŏk ŭro palchŏn kanŭnghan hyŏmnyŏk model. Sŏul Tʻŭkpyŏlsi: Tʻongil Yŏnʼguwŏn, 2002.

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Hänsch, W. The drift diffusion equation and its applications in MOSFET modeling. Wien: Springer-Verlag, 1991.

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Hänsch, W. The drift diffusion equation and its applications in MOSFET modeling. Wien: Springer-Verlag, 1991.

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Saijets, Jan. MOSFET RF characterization using bulk and SOI CMOS technologies. [Espoo, Finland]: VTT Technical Research Centre of Finland, 2007.

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Book chapters on the topic "MOSFET model"

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Arora, Narain. "MOSFET DC Model." In Computational Microelectronics, 230–324. Vienna: Springer Vienna, 1993. http://dx.doi.org/10.1007/978-3-7091-9247-4_6.

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Lu, Darsen, Chung-Hsun Lin, Ali Niknejad, and Chenming Hu. "Multi-Gate MOSFET Compact Model BSIM-MG." In Compact Modeling, 395–429. Dordrecht: Springer Netherlands, 2010. http://dx.doi.org/10.1007/978-90-481-8614-3_13.

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Galadi, Abdelghafour, Yassine Hadini, Bekkay Hajji, and Adil Echchelh. "Behavioral Model of the Superjunction Power MOSFET Devices." In Embedded Systems and Artificial Intelligence, 227–32. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-0947-6_22.

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Langevelde, R. van, and G. Gildenblat. "PSP: An advanced surface-potential-based MOSFET model." In TRANSISTOR LEVEL MODELING FOR ANALOG/RF IC DESIGN, 29–66. Dordrecht: Springer Netherlands, 2006. http://dx.doi.org/10.1007/1-4020-4556-5_2.

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Gildenblat, Gennady, Weimin Wu, Xin Li, Ronald van Langevelde, Andries J. Scholten, Geert D. J. Smit, and Dirk B. M. Klaassen. "Surface-Potential-Based Compact Model of Bulk MOSFET." In Compact Modeling, 3–40. Dordrecht: Springer Netherlands, 2010. http://dx.doi.org/10.1007/978-90-481-8614-3_1.

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Fuchs, E., P. Dollfus, G. Lecarval, E. Robilliart, S. Barraud, D. Villanueva, and H. Jaouen. "A New Backscattering Model for Nano-MOSFET Compact Modeling." In Simulation of Semiconductor Processes and Devices 2004, 251–54. Vienna: Springer Vienna, 2004. http://dx.doi.org/10.1007/978-3-7091-0624-2_58.

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Frifita, K., N. K. M’Sirdi, E. Baghaz, A. Naamane, and M. Boussak. "Electro-Thermal Model of a Silicon Carbide Power MOSFET." In Lecture Notes in Electrical Engineering, 239–49. Singapore: Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-13-1405-6_29.

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Miura-Mattausch, M., A. Rahm, and O. Prigge. "Influence of Analytical MOSFET Model Quality on Analog Circuit Simulation." In Simulation of Semiconductor Devices and Processes, 278–81. Vienna: Springer Vienna, 1995. http://dx.doi.org/10.1007/978-3-7091-6619-2_67.

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Le Royer, C., G. Le Carval, and M. Sanquer. "SET Accurate Compact Model for SET-MOSFET Hybrid Circuit Simulation." In Simulation of Semiconductor Processes and Devices 2004, 267–70. Vienna: Springer Vienna, 2004. http://dx.doi.org/10.1007/978-3-7091-0624-2_62.

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Niu, G. F., G. Ruan, and T. A. Tang. "An Analytical Device Model Including Velocity Overshoot for Subquartermicrometer MOSFET." In Simulation of Semiconductor Devices and Processes, 285–88. Vienna: Springer Vienna, 1993. http://dx.doi.org/10.1007/978-3-7091-6657-4_70.

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Conference papers on the topic "MOSFET model"

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Beckers, Arnout, Farzan Jazaeri, and Christian Enz. "Cryogenic MOSFET Threshold Voltage Model." In ESSDERC 2019 - 49th European Solid-State Device Research Conference (ESSDERC). IEEE, 2019. http://dx.doi.org/10.1109/essderc.2019.8901806.

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Amelin, Sergey, and Marina Amelina. "CREATING MOSFET NONLINEAR CAPACITANCE MODEL." In CAD/EDA/SIMULATION IN MODERN ELECTRONICS 2019. Bryansk State Technical University, 2019. http://dx.doi.org/10.30987/conferencearticle_5e028212defaa8.94622018.

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The problems of model creating for nonlinear gate-drain capacitance of MOSFET are considered. A circuit is proposed for measuring this capacitance in the region of negative drain-gate voltages. The dependence of the gate-drain capacitance on voltage for the IRF540N transistor is constructed and an approximating function that can be used to create a model of a MOS-transistor is proposed.
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Isa, Dino, Low Mei Fong, Lindsay Leong, and Lau Yee Kuan. "GA optimized Power MOSFET model." In 2006 Thirty-First IEEE/CPMT International Electronics Manufacturing Technology Symposium. IEEE, 2006. http://dx.doi.org/10.1109/iemt.2006.4456443.

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Kaifi, Mohammad, and M. J. Siddiqui. "Kink model for SOI MOSFET." In 2011 International Conference on Multimedia, Signal Processing and Communication Technologies (IMPACT). IEEE, 2011. http://dx.doi.org/10.1109/mspct.2011.6150478.

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Narayanan, M. R., Hasan Al-Nashash, Dipankar Pal, and Mahesh Chandra. "Circuit model for SelBox MOSFET." In 2012 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC). IEEE, 2012. http://dx.doi.org/10.1109/edssc.2012.6482805.

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Yueqing Wang, Zhijie Zhu, Yuling Huang, Qingyou Zhang, and Jianping Ying. "A unification MOSFET switching-off model." In 31st Annual Conference of IEEE Industrial Electronics Society, 2005. IECON 2005. IEEE, 2005. http://dx.doi.org/10.1109/iecon.2005.1568980.

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Zhuolin, Duan, Zhang Dong, Fan Tao, and Wen Xuhui. "A simple SiC power MOSFET model." In IECON 2017 - 43rd Annual Conference of the IEEE Industrial Electronics Society. IEEE, 2017. http://dx.doi.org/10.1109/iecon.2017.8216122.

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Dobrescu, Lidia, Raluca Smeu, and Dragos Dobrescu. "Load switch power MOSFET SPICE model." In 2016 International Conference and Exposition on Electrical and Power Engineering (EPE). IEEE, 2016. http://dx.doi.org/10.1109/icepe.2016.7781418.

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HOGGATT, CHARLES, JAN DIVIN, JOSEF DOBES, STANISLAV BANAS, and VACLAV PANKO. "Lumped RF Model of MOSFET Gate Resistance for GHz+ Frequencies Enhancement of Compact BSIM MOSFET Model." In Third International Conference on Advances in Information Processing and Communication Technology - IPCT 2015. Institute of Research Engineers and Doctors, 2015. http://dx.doi.org/10.15224/978-1-63248-077-4-22.

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Singh, Kirmender. "Design methodology of standard analog circuit block using EKV MOSFET model and validation using BSIM3v3 MOSFET model." In 2015 International Conference on Signal Processing and Communication (ICSC). IEEE, 2015. http://dx.doi.org/10.1109/icspcom.2015.7150669.

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Reports on the topic "MOSFET model"

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Ashenfelter, Orley, and Karl Storchmann. Using a Hedonic Model of Solar Radiation to Assess the Economic Effect of Climate Change: The Case of Mosel Valley Vineyards. Cambridge, MA: National Bureau of Economic Research, July 2006. http://dx.doi.org/10.3386/w12380.

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Neely, Christopher J., Sébastien Laurent, and Deniz Erdemlioglu. Which Continuous-time Model Is Most Appropriate For Exchange Rates? Federal Reserve Bank of St. Louis, 2013. http://dx.doi.org/10.20955/wp.2013.024.

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Verburg, Peter H., Žiga Malek, Sean P. Goodwin, and Cecilia Zagaria. The Integrated Economic-Environmental Modeling (IEEM) Platform: IEEM Platform Technical Guides: User Guide for the IEEM-enhanced Land Use Land Cover Change Model Dyna-CLUE. Inter-American Development Bank, September 2021. http://dx.doi.org/10.18235/0003625.

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The Conversion of Land Use and its Effects modeling framework (CLUE) was developed to simulate land use change using empirically quantified relations between land use and its driving factors in combination with dynamic modeling of competition between land use types. Being one of the most widely used spatial land use models, CLUE has been applied all over the world on different scales. In this document, we demonstrate how the model can be used to develop a multi-regional application. This means, that instead of developing numerous individual models, the user only prepares one CLUE model application, which then allocates land use change across different regions. This facilitates integration with the Integrated Economic-Environmental Modeling (IEEM) Platform for subnational assessments and increases the efficiency of the IEEM and Ecosystem Services Modeling (IEEMESM) workflow. Multi-regional modelling is particularly useful in larger and diverse countries, where we can expect different spatial distributions in land use changes in different regions: regions of different levels of achieved socio-economic development, regions with different topographies (flat vs. mountainous), or different climatic regions (dry vs humid) within a same country. Accounting for such regional differences also facilitates developing ecosystem services models that consider region specific biophysical characteristics. This manual, and the data that is provided with it, demonstrates multi-regional land use change modeling using the country of Colombia as an example. The user will learn how to prepare the data for the model application, and how the multi-regional run differs from a single-region simulation.
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Bożek, Małgorzata. FILM PRODUCTION IN POLAND. STAGES: FROM AN IDEA TO THE SCREEN. Ivan Franko National University of Lviv, March 2021. http://dx.doi.org/10.30970/vjo.2021.50.11112.

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The Polish film system is characterized by a variety of forms. Michał Zabłocki, the author of the comprehensive study of the «Organization of the production of feature film in Poland», isolates two models of world cinema: a producer and a producer – director. The first one features the dominant role of the producer, which means the person who is responsible for the work of all the film departments – direction, cinematography, production management, scenography and costume design. The second one, the model which is still the most popular in Poland, assumes close cooperation between the producer and the director.
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Bruce, Judith, and Sophie Soares. Intentional Design: Reaching the Most Excluded Girls in the Poorest Communities—A Guide for Practitioners and Advocates. Population Council, 2021. http://dx.doi.org/10.31899/pgy19.1013.

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The Intentional Design guide is a sourcebook that offers step-wise technical guidance for utilizing the Intentional Design approach, an evidence-based model for the design of girl-centered programs that generates a cycle of information collection and analysis. The tools outlined in this guide have been applied in sites in 44 countries. Twenty-one detailed field reports—including an extensive discussion of the Abriendo Oportunidades program in Guatemala—set the scene in each context by describing key challenges and problems faced, present how tools were used, and explain the eventual resolutions of the Intentional Design process.
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Carranza, Juan Esteban, Juan David Martin, and Álvaro José Riascos. The COVID epidemic and the economic activity with acquired immunity. Banco de la República de Colombia, December 2020. http://dx.doi.org/10.32468/be.1147.

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We calibrate a macroeconomic model with epidemiological restrictions using Colombian data. The key feature of our model is that a portion of the population is immune and cannot transmit the virus, which improves substantially the fit of the model to the observed contagion and economic activity data. The model implies that government restrictions and the endogenous changes in individual behavior saved around 15,000 lives and decreased consumption in 2020 by about 4.7%. The results suggest that most of this effect was the result of the government policies.
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Hart, Carl R., D. Keith Wilson, Chris L. Pettit, and Edward T. Nykaza. Machine-Learning of Long-Range Sound Propagation Through Simulated Atmospheric Turbulence. U.S. Army Engineer Research and Development Center, July 2021. http://dx.doi.org/10.21079/11681/41182.

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Conventional numerical methods can capture the inherent variability of long-range outdoor sound propagation. However, computational memory and time requirements are high. In contrast, machine-learning models provide very fast predictions. This comes by learning from experimental observations or surrogate data. Yet, it is unknown what type of surrogate data is most suitable for machine-learning. This study used a Crank-Nicholson parabolic equation (CNPE) for generating the surrogate data. The CNPE input data were sampled by the Latin hypercube technique. Two separate datasets comprised 5000 samples of model input. The first dataset consisted of transmission loss (TL) fields for single realizations of turbulence. The second dataset consisted of average TL fields for 64 realizations of turbulence. Three machine-learning algorithms were applied to each dataset, namely, ensemble decision trees, neural networks, and cluster-weighted models. Observational data come from a long-range (out to 8 km) sound propagation experiment. In comparison to the experimental observations, regression predictions have 5–7 dB in median absolute error. Surrogate data quality depends on an accurate characterization of refractive and scattering conditions. Predictions obtained through a single realization of turbulence agree better with the experimental observations.
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MacCormack, K. E., C. H. Eyles, and J. C. Maclachlan. Making the most of what you've got: creating 3D subsurface models with data of varying quality. Natural Resources Canada/ESS/Scientific and Technical Publishing Services, 2006. http://dx.doi.org/10.4095/221887.

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Day, St John, Tim Forster, and Ryan Schweitzer. Water Supply in Protracted Humanitarian Crises: Reflections on the sustainability of service delivery models. Oxfam, UNHCR, September 2020. http://dx.doi.org/10.21201/2020.6362.

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UNHCR estimates that the average time spent by a refugee in a camp is 10 years, while the average refugee camp remains for 26 years. WASH (water, sanitation and hygiene) is a crucial component of humanitarian response and longer-term recovery. Humanitarian agencies and host governments face many challenges in protracted situations and complex long-term humanitarian crises. One key issue is how water supplies should be managed in the long term. Who is best placed to operate and manage WASH services and which delivery model is the most viable? At the end of 2019, there were 15.7 million refugees in protracted situations, representing 77% of all refugees. This report takes stock of the various alternative service delivery models, to enable humanitarian and development agencies to work together to smooth the transition from emergency relief to sustainable services.
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Busso, Matías, Juan Pablo Chauvin, and Nicolás Herrera L. Rural-Urban Migration at High Urbanization Levels. Inter-American Development Bank, December 2020. http://dx.doi.org/10.18235/0002904.

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This study assesses the empirical relevance of the Harris-Todaro model at high levels of urbanization a feature that characterizes an increasing number of developing countries, which were largely rural when the model was created 50 years ago. Using data from Brazil, the paper compares observed and model-based predictions of the equilibrium urban employment rate of 449 cities and the rural regions that are the historic sources of their migrant populations. Little support is found in the data for the most basic version of the model. However, extensions that incorporate labor informality and housing markets have much better empirical traction. Harris-Todaro equilibrium relationships are relatively stronger among workers with primary but no high school education, and those relationships are more frequently found under certain conditions: when cities are relatively larger; and when associated rural areas are closer to the magnet city and populated to a greater degree by young adults, who are most likely to migrate.
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