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Dissertations / Theses on the topic 'MOSFET'

Author: Grafiati

Published: 4 June 2021

Last updated: 25 July 2025

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1

Ngabonziza, Nyampame Christian. "Drivning av Likströmsmotor med MOSFET : DC Motor control by MOSFET." Thesis, Linnéuniversitetet, Institutionen för datavetenskap, fysik och matematik, DFM, 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:lnu:diva-11294.

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Detta projekt är ett examensarbete för kandidatexamen som är obligatorisk för alla studenter. För att ta ut examen måste jag lämna en skriftlig rapport om vad jag har gjort. Redovisa simuleringar och mätningar på olika kretsar. I mitt fall var jag intresserad på att studera hur varvtalet på en likströmsmotor kan regleras med hjälp av olika metoder. Detta är mycket utmanande för mig eftersom jag inte har sett så många lösningar på detta problem. Jag kommer att använda kunskap, teknik och komponenter från Kraftelektronik för att utföra mitt arbete. Det blir mycket intressant att med dagens u

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2

Lui, Jerome C. (Jerome Chun Lung). "Automated MOSFET parameter extraction." Thesis, Massachusetts Institute of Technology, 1995. http://hdl.handle.net/1721.1/36583.

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3

Major, Jan. "Počítačové modelování MOSFET tranzistoru." Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2011. http://www.nusl.cz/ntk/nusl-219148.

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Work is focused on computer modeling of PN junction and MOSFET transistor in the program COMSOL Multiphysics and in program TiberCAD. The text is discussed on the drift and diffusion in semiconductors. Also shown is a method of modeling the PN junction and MOSFET transistor in the programs and compare models.

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4

Munteanu, Daniela. "Modélisation et caractérisation des transistors SOI : du pseudo-MOSFET au MOSFET submicronique ultramince." Grenoble INPG, 1999. http://www.theses.fr/1999INPG0104.

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L'objet de cette these est de contribuer a l'analyse et a l'optimisation des materiaux soi et au developpement de modeles physiques et de methodes de caracterisation adaptees aux dispositifs soi. Dans le premier chapitre, nous rappelons l'interet de la technologie soi, ses avantages et ses inconvenients par rapport a la technologie si massif. Le deuxieme chapitre est consacre a la caracterisation du materiau, en utilisant la technique -mosfet, methode tres appropriee pour comparer la qualite et les parametres electriques des differentes structures soi. Une analyse approfondie de la validite de

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5

Shah, Nirav. "Stress modeling of nanoscale MOSFET." [Gainesville, Fla.] : University of Florida, 2005. http://purl.fcla.edu/fcla/etd/UFE0012221.

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6

Prokhorov, Andrey, and Olesya Gerzheva. "Model of MOSFET in Delphi." Thesis, Högskolan i Halmstad, Sektionen för Informationsvetenskap, Data– och Elektroteknik (IDE), 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:hh:diva-14209.

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In modern times the increasing complexity of transistors and their constant decreasingsize require more effective techniques to display and interpret the processes that are inside of devices. In this work, we are modeling a two‐dimensional n‐MOSFET with a long channeland uniformly doped substrate. We assume that this device is a large geometry device so that short‐channel and narrow‐width effects can be neglected. As a result of the thesis, a demonstration program was built. In this executable file, the user can choose parameters of the MOSFET‐model: drain and gate voltage, and different geome

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Chen, Max Chuan. "Modeling of KTH UTBSOI MOSFET." Thesis, KTH, Skolan för informations- och kommunikationsteknik (ICT), 2014. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-177444.

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Semiconductor devices such as transistors and integrated circuits are everywhere in our daily lives, it's one of the most important foundations of today's information society. Nanotechnology enables the production of lighter, faster and more efficient components and systems. Manufacturing technology has improved considerably over the past 40 years, but in recent years, the bulk transistors have reaching the limits of Moore’s law as the size shrinking too few tens of nanometers. The main difficulties are to reduce the power consumption, improve the speed meanwhile maintain the low manufacturing

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8

李華剛 and Eddie Herbert Li. "Narrow-channel effect in MOSFET." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 1990. http://hub.hku.hk/bib/B31209312.

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9

Wang, Yao. "MOSFET strain sensor for microcantilevers." Thesis, Queen's University Belfast, 2014. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.675436.

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Microcantilever structure was used to design and fabricate strain sensors. P-channel MOSFETs were designed and fabricated for strain sensors as hole mobility under uniaxial stress has higher mobility enhancement than that of electron mobility under either uniaxial stress or biaxial stress. For MOSFET sensors on microcantilevers, anchor area is the traditional position for sensors due to its highest stress. The aim of this research is to investigate the assumption of biaxial stress at the anchor area which makes the anchor location less sensitive. COMSOL software was employed to simulate stress

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10

Araújo, Guido Costa Souza de 1962. "Simulação bidimensional de dispositivos MOSFET." [s.n.], 1990. http://repositorio.unicamp.br/jspui/handle/REPOSIP/261310.

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Orientador : Bernard Waldman<br>Dissertação (mestrado) - Universidade Estadual de Campinas, Faculdade de Engenharia Eletrica<br>Made available in DSpace on 2018-07-13T21:47:06Z (GMT). No. of bitstreams: 1 Araujo_GuidoCostaSouzade_M.pdf: 7097802 bytes, checksum: 3989d5131b3e9436f6f55fc6d620a10e (MD5) Previous issue date: 1990<br>Resumo: Com a drástica diminuição das dimensões nas novas gerações de transistores MOS VLSI, um aumento considerável de efeitos dimensionais no comportamento destes dispositivos tem surgido. Isto traz como conseqüência imediata, a impossibilidade de utilização dos mod

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11

Peters, Chris (Christopher Joseph) Carleton University Dissertation Engineering Electrical. "MOSFET based gamma radiation detector." Ottawa, 1992.

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12

Maréchal, Aurélien. "Metal-oxide-semiconductor capacitor for diamond transistor : simulation, fabrication and electrical analysis." Thesis, Université Grenoble Alpes (ComUE), 2015. http://www.theses.fr/2015GREAT094/document.

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Plus de deux décennies de progrès technologiques dans le contrôle de la qualité de la croissance, du dopage et dans la conception de composants ont conduit à l'émergence de nouvelles potentialités pour des applications d'électronique de puissance. Comme le diamant représente le semi-conducteur ultime en raison de ses propriétés physiques supérieures, des efforts ont été réalisés pour développer divers dispositifs électroniques, tels que des diodes Schottky, des transistors à effet de champ (MOSFET), transistor bipolaire, jonctions pin ...Le développement d'outils de simulation capables d'antic

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NEDELJKOVIC, SONJA R. "PARAMETER EXTRACTION AND DEVICE PHYSICS PROJECTIONS ON LATERAL LOW VOLTAGE POWER MOSFET CONFIGURATIONS." University of Cincinnati / OhioLINK, 2001. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1005163403.

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14

Mohta, Nidhi. "MOSFET piezoresistance coefficients on (100) silicon." [Gainesville, Fla.] : University of Florida, 2006. http://purl.fcla.edu/fcla/etd/UFE0017761.

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15

Wang, Lihui. "Quantum Mechanical Effects on MOSFET Scaling." Diss., Available online, Georgia Institute of Technology, 2006, 2006. http://etd.gatech.edu/theses/available/etd-07072006-111805/.

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Thesis (Ph. D.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2007.<br>Philip First, Committee Member ; Ian F. Akyildiz, Committee Member ; Russell Dupuis, Committee Member ; James D. Meindl, Committee Chair ; Willianm R. Callen, Committee Member.

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Lin, Xinnan. "Double gate MOSFET technology and applications /." View abstract or full-text, 2007. http://library.ust.hk/cgi/db/thesis.pl?ECED%202007%20LIN.

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Gajula, Durga Rao. "Optimization of germanium MOSFET fabrication processes." Thesis, Queen's University Belfast, 2013. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.602509.

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As silicon MOSFETs have reached their saturation limits due to aggressive scaling, high mobility channel materials like germanium are offering a future generation of semiconductor materials. Germanium's smaller band-gap broadens the optical absorption spectrum, and its low melting point considerably reduces the process temperature compared with silicon. However its unstable native oxide, large diffusion constant of n-type dopants, high series resistance of metal contacts on germanium, susceptibility to implantation damage, Fermi-level pinning of metal contacts on n-type source/drain regions, p

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Rudnicki, Kamil. "MOSFET transistor fabrication on AFM tip." Thesis, University of Glasgow, 2014. http://theses.gla.ac.uk/5398/.

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The project is concerned with the development of methods for the fabrication of magnetic sensor devices on Atomic Force Microscopy (AFM) probes and their characterization. The devices use the principle of the Hall effect (based on the Lorentz force) to sense the magnetic properties of a magnetized specimen. In the past Hall bar sensors have been fabricated using semimetals such as Bismuth, or using 2-d electron gas material based on heterojunctions in III-V material. The former probes are limited by low sensitivity. The latter are limited by the difficulty encountered when trying to integrate

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Iyengar, Pravin. "Pulsed MOSFET based linear transformer driver." Thesis, University of Strathclyde, 2014. http://oleg.lib.strath.ac.uk:80/R/?func=dbin-jump-full&object_id=24217.

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Pulsed power flash radiography is a rapidly growing technology which involves the generation of intense and short bursts of electric pulses to generate high energy X-rays to inspect dense objects. The generation of fast transition, short width, repetitive pulses for effective output requires switching technology which has limitations. From the traditional slow switching gas trigger switches, switching technology has evolved to semiconductors which has led to improved switching characteristics and delivered pulse shapes. One such semiconductor which is of interest in flash radiography is a powe

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Dybek, Marcin. "Ocena przydatności detektorów MOSFET w radioterapii." Doctoral thesis, Katowice : Uniwersytet Śląski, 2012. http://hdl.handle.net/20.500.12128/5372.

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Częstość występowania nowotworów w Europie gwałtownie rośnie w ostatnich dziesięcioleciach. Szacowane jest 3,2 miliona nowych przypadków (53% występujących u mężczyzn, 47% kobiet) oraz 1,7 miliona zgonów (56% mężczyzn, 44% kobiet) każdego roku. Nowotwory generują poważny problem dla zdrowia publicznego Europy, a starzenie się ludności spowoduje, że te wartości będą wzrastać, nawet jeżeli liczebność każdej grupy wiekowej pozostanie stała. Radioterapia, poza chemioterapią i chirurgią, jest jednym ze sposobów leczenia nowotworów w dużym zakresie ich typów i lokalizacji. Ma na celu wyleczen

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Chvátal, Miloš. "Transportní a šumové charakteristiky tranzistorů MOSFET." Doctoral thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2014. http://www.nusl.cz/ntk/nusl-233635.

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This doctoral thesis is focused on the analysis of transport characteristics of submicron and micron transistors MOSFET. The assumption is a constant gradient of concentration, which leads to the fact that the diffusion current density is independent of the distance from the source. Active energy was determined from temperature dependence. The proposed physical model made it possible to determine the value of access resistance between drain and source their temperature dependence. Based on the assumption that the divergence of the gradient of the current density in the channel is zero. IV char

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Clavijo, William. "Nanowire Zinc Oxide MOSFET Pressure Sensor." VCU Scholars Compass, 2014. http://scholarscompass.vcu.edu/etd/625.

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Fabrication and characterization of a new kind of pressure sensor using self-assembly Zinc Oxide (ZnO) nanowires on top of the gate of a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is presented. Self-assembly ZnO nanowires were fabricated with a diameter of 80 nm and 800 nm height (80:8 aspect ratio) on top of the gate of the MOSFET. The sensor showed a 110% response in the drain current due to pressure, even with the expected piezoresistive response of the silicon device removed from the measurement. The pressure sensor was fabricated through low temperature bottom up ultrahig

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23

Budihardjo, Irwan Kukuh. "A charge based power MOSFET model /." Thesis, Connect to this title online; UW restricted, 1995. http://hdl.handle.net/1773/5975.

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24

Fiala, Zbyněk. "Budiče spínacích výkonových tranzistorů GaN MOSFET." Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2016. http://www.nusl.cz/ntk/nusl-242073.

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The thesis describes the procedure during the proposal of the driver circuits for the GaN MOSFET transistors, which are known for their fast switching especially. In the first instance of this thesis the issue of GaN MOSFET transistors is described and also the thesis describes the different types of MOSFET transistors in the way of their electrical and mechanical attributes. The specific type driver circuit is stated in the thesis, which was selected in the semestral thesis. For this circuit the boost converter with an output power 600W and high switching frequency 800kHz was proposed as an a

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25

Constant, Aurore. "SiC oxidation processing technology for MOSFETs fabrication." Thesis, Montpellier 2, 2011. http://www.theses.fr/2011MON20061.

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De nos jours, les dispositifs d'électroniques de puissance sont principalement basés sur la technologie silicium qui est mature et très bien établie. Toutefois, le silicium présente quelques limitations importantes concernant les pertes de puissance, le fonctionnement à haute température et la vitesse de commutation. Par ailleurs, la technologie silicium a presque atteint ses limites physiques. Ainsi, une nouvelle génération de dispositifs de puissance à base de nouveaux matériaux doit être développée pour faire face aux futurs défis énergiques. Aujourd'hui, le matériau semi-conducteur le plus

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Guérin, Chloé. "Etude de la dégradation par porteurs chauds des technologies CMOS avancées en fonctionnement statique et dynamique." Aix-Marseille 1, 2008. http://www.theses.fr/2008AIX11041.

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La miniaturisation des dernières technologies s’est effectuée à tension d’alimentation quasi constante. Cela se traduit par une augmentation du champ latéral du transistor MOSFET. Un risque important réapparaît en terme de fiabilité : la dégradation par porteurs chauds (HC). Pour garantir le meilleur compromis entre fiabilité et performance, il est important de comprendre toutes les causes physiques de la dégradation par porteurs chauds. Grâce à une étude menée pour des conditions de polarisation et de température variées, sur différentes épaisseurs d’oxyde et longueurs de canal, nous avons mi

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Bouguet, Christophe. "Développement d’un Driver Communicant pour MOSFET SiC." Thesis, Nantes, 2017. http://www.theses.fr/2017NANT4034/document.

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Les semi-conducteurs présents dans les convertisseurs de puissance sont associés à un circuit de commande rapprochée appelé « driver ». Ce circuit sert d’interface entre l’électronique de contrôle-commande et les modules de puissance qu’il pilote. Dans le cadre des travaux de thèse, un driver dédié aux transistors MOSFET SiC a été développé. Il est conçu pour des modules dont le calibre en courant est de 300A et travaillant sous une tension de bus continu de 1200V. Au-delà de la conception d’un driver spécifique aux transistors MOSFET SiC, un second aspect des travaux de thèse a consisté à imp

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Linewih, Handoko, and h. linewih@griffith edu au. "Design and Application of SiC Power MOSFET." Griffith University. School of Microelectronic Engineering, 2003. http://www4.gu.edu.au:8080/adt-root/public/adt-QGU20030506.013152.

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This thesis focuses on the design of high voltage MOSFET on SiC and its application in power electronic systems. Parameters extraction for 4H SiC MOS devices is the main focus of the first topic developed in this thesis. Calibration of two-dimensional (2-D) device and circuit simulators (MEDICI and SPICE) with state-of-the-art 4H SiC MOSFETs data are performed, which includes the mobility parameter extraction. The experimental data were obtained from lateral N-channel 4H SiC MOSFETs with nitrided oxide-semiconductor interfaces, exhibiting normal mobility behavior. The presence of increasing in

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Jackson, Keith M. (Keith Matthew). "Optimal MOSFET design for low temperature operation." Thesis, Massachusetts Institute of Technology, 2001. http://hdl.handle.net/1721.1/8565.

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Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2001.<br>Includes bibliographical references.<br>The phenomenal scaling of MOSFET feature size, two orders of magnitude in the past 30 years, has provided the gains in performance and packing density that underlie the GHz microprocessors and 256 MB DRAMs that exist today. Looking forward, the connection between increased performance and smaller devices faces significant challenges. Lowering the operating temperature can help achieve the desired increases in performance as device size s

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Al, Kzair Christian. "SiC MOSFET function in DC-DC converter." Thesis, Uppsala universitet, Elektricitetslära, 2020. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-415147.

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This thesis evaluate the state of art ROHM SCT3080KR silicon carbide mosfet in a synchronous buck converter. The converter was using the ROHM P02SCT3040KR-EVK-001 evaluation board for driving the mosfets in a half bridge configuration. Evaluation of efficiency, waveforms, temperature and a theoretical comparison between a silicon mosfet (STW12N120K5) is done. For the efficiency test the converter operate at 200 V input voltage and 100 V output voltage at output currents of 7 A to 12 A, this operation was tested at switching frequencies of 50 kHz, 80 kHz and 100 kHz. The result of the efficienc

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SUNDARAM, KARTHIK. "A DYNAMIC MOSFET MODEL IN VHDL-AMS." University of Cincinnati / OhioLINK, 2006. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1154637877.

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Tuladhar, Looja R. "Resonant Power MOSFET Driver for LED Lighting." Youngstown State University / OhioLINK, 2009. http://rave.ohiolink.edu/etdc/view?acc_num=ysu1264709029.

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Tuladhar, Looja R. "Resonant power MOSFET drivers for LED lighting /." Connect to resource online, 2009. http://rave.ohiolink.edu/etdc/view?acc_num=ysu1264709029.

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Linewih, Handoko. "Design and Application of SiC Power MOSFET." Thesis, Griffith University, 2003. http://hdl.handle.net/10072/367638.

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This thesis focuses on the design of high voltage MOSFET on SiC and its application in power electronic systems. Parameters extraction for 4H SiC MOS devices is the main focus of the first topic developed in this thesis. Calibration of two-dimensional (2-D) device and circuit simulators (MEDICI and SPICE) with state-of-the-art 4H SiC MOSFETs data are performed, which includes the mobility parameter extraction. The experimental data were obtained from lateral N-channel 4H SiC MOSFETs with nitrided oxide-semiconductor interfaces, exhibiting normal mobility behavior. The presence of increasing in

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35

Matiaško, Maroš. "Experimentální spínaný zdroj s tranzistory GaN MOSFET." Master's thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2016. http://www.nusl.cz/ntk/nusl-242061.

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This master’s thesis deals with the design of the switching power supply on the principle of high frequency converter. The goal of this thesis is construction of converter which is using GaN MOSFET transistors and SiC diodes for switching. The converter uses two switch forward power supply topology. Unusually high switching frequency was chosen for the design with power transformer with open magnetic core. The outcome of this work is functional converter which is primarily intended for educational and demonstrational purposes. Multiple parts of this converter are divided into individual blocks

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Guerfi, Youssouf. "Réalisation et caractérisation de transistors MOS à base de nanofils verticaux en silicium." Thesis, Toulouse 3, 2015. http://www.theses.fr/2015TOU30253/document.

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Afin de poursuivre la réduction d'échelle des transistors MOS, l'industrie des semiconducteurs a su anticiper les limitations de la miniaturisation par l'introduction de nouveaux matériaux ou de nouvelles architectures. L'avènement des structures à triples grilles (FinFET) a permis de maitriser les effets canaux courts et poursuivre les efforts de miniaturisation (nœud technologique 14 nm en 2014). Le cas ultime pour le contrôle électrostatique de la grille sur le canal est donné par une grille entourant totalement le canal du dispositif. A cet effet, un transistor à nanofil à grille entourant

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Ljunggren, Tobias. "Investigation of PWM-controlled MOSFET with inductive load." Thesis, Linköping University, Department of Electrical Engineering, 2002. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-1271.

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<p>This report is the basis for a Bachelor of Science thesis in engineering done at Volvo Powertrain in Gothenburg. The problem consisted of investigating a circuit with a PWM-controlled MOSFET driving a DC-motor. </p><p>The problem was to investigate what caused the circuit to break the transistor. Finally an improvement of the circuit is designed making the MOSFET withstand the stressful conditions exposed to. </p><p>An overall description of the problems with switching an inductive load using a MOSFET as switch is done. Some methods to protect the MOSFET from failure are also discussed. Fin

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Escobedo-Cousin, Enrique. "Material characterisation of strained Si/SiGe MOSFET devices." Thesis, University of Newcastle upon Tyne, 2008. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.485864.

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In this study, material investigations of strained Si/SiGe platforms for MOSFET applications are presented. The device performance advantages of introducing strain in the MOSFET channel have become well established in recent years. Biaxial strain changes carrier mobility by altering the band structure of the channel, leading to a reduction in carrier effective mass and the time between scattering events. Electron mobility benefits from the tensile strain achieved by the epitaxial growth of Si on a strain-relaxed SiGe buffer (SRB). Since holes, in contrast, benefit from compressive strein, dual

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Zhang, Yucai. "Multiharmonic tuning behavior of MOSFET RF power amplifiers." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 2001. http://www.collectionscanada.ca/obj/s4/f2/dsk3/ftp05/MQ63040.pdf.

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Murray, D. C. "MOSFET flicker noise : its characterisation and its origins." Thesis, University of Southampton, 1992. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.315505.

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Huang, Yan-Hua, and 黃彥皓. "Radio frequency MOSFET." Thesis, 1999. http://ndltd.ncl.edu.tw/handle/47630350584396371167.

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碩士<br>國立交通大學<br>電子工程系<br>87<br>Small signal S parameters of a quarter micron Si MOSFET in common source configuration are measured from 100MHz to 18 GHz in different biasing conditions. From the S parameters we found the evidence of the non-quasi-static (NQS) effects, namely the low-pass nature of the transconductance, and the nonzero real part of the impedance looking into the gate. Also the output impedance is lowered by the finite conductance of the substrate. In order to fit the S parameters, we chose BSIM3v3, which is successful in describing the small geometry effects, as the basic model

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Lo, Hung-Ming, and 駱宏明. "n-MOSFET Performance Evaluation." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/96059871089398717314.

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碩士<br>國立高雄應用科技大學<br>電子與資訊工程研究所碩士班<br>92<br>Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) has been widely used in ULSI semiconductor technology. The major advantages of MOSFET are high yield, low cost, dense packing, and low power consumption. The carrier mobility in the inversion charge layer of MOSFET has become increasingly important as device scale down to deep submicron due to its deterministic property in drain current. Therefore, the inversion-layer mobility is a vital important parameter to understand the mechanisms of charge transport in the surface inversion layer.

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Lin, Sheng-Zhi, and 林聖智. "p-MOSFET Performance Evaluation." Thesis, 2004. http://ndltd.ncl.edu.tw/handle/00293290458545871034.

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碩士<br>國立高雄應用科技大學<br>電子與資訊工程研究所碩士班<br>92<br>In this paper , we measure the I-V characteristics of the p-MOSFETs with the gate lengths of 4μm and 10μm, and apply a simple model to extract the change of mobility with respect to the gate voltage. Our results show that the changes of the mobility for both p-MOSFETs are strongly dependent on the gate bias due to the interplay of interface roughness scattering, ionized impurity scattering, and the change of density-of-state. The strength of the impurity scattering is reduced by increasing VG due to the decrease of density of state, and the screening

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Yeh, Ting-Hsien, and 葉婷銜. "Double-gate MOSFET Simulator." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/23537537074173278742.

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碩士<br>國立交通大學<br>電子研究所<br>101<br>It is well known that the scaling of the traditional bulk MOSFETs would encounter several issues like the short channel effects (SCE). To deal with this problem, many of methods have been proposed, one of which is new device architectures, such as multi-gate structures. The aim of this work is to develop a double-gate n-MOSFET simulator by using self-consistent solving of Schrödinger and Poisson equations with some physical models taken into account. Besides, for many simulators in the literature, the boundary conditions of Schrödinger’s equation are often makin

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Tsai, Ming-Tsang, and 蔡明蒼. "High Voltage Contact Gate MOSFET (CG-MOSFET) with Fully CMOS Logic Compatible Process." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/62642110513392707942.

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碩士<br>國立清華大學<br>電子工程研究所<br>99<br>In recent years, the improvement of power electronics and power devices is one of keys when the energy issues become more important. The cost down and the tradeoff between breakdown voltage and on-resistance have always been major concerns in designing power devices. Many studies have proposed their structure only needs few masks. However, it is still special process which needs wire bonding to connect the power device and main circuit. It is a limit for cost down. In this thesis, a novel 20V-class device with CMOS logic compatible process is proposed which

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Yen, Wei-Ting, and 顏瑋廷. "A Self-Aligned Nanowire MOSFET." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/h7jr5d.

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碩士<br>國立中央大學<br>電機工程研究所<br>94<br>In this thesis, the formation of NiSi silicide using rapid thermal annealing is investigated. The NiSi salicidation process is, then, incorporated into the fabrication of novel self-aligned nanowire MOSFET devices structure. A self-aligned nanowire MOSFET fabricated on a 70-nm-thick SOI wafer, features advanced process modules including recessed nitride spacer, fully silicided (NiSi) source/drain, and self-aligned poly silicon gate. In the pursuit of low series resistance in a thin SOI, it is critical to optimize spacer width and utilize fully-silicide S/D. Sin

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"Simulação bidimensional de dispositivos MOSFET." Tese, Biblioteca Digital da Unicamp, 1990. http://libdigi.unicamp.br/document/?code=vtls000026459.

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Chen, Hsun-Hsiang, and 陳勛祥. "MOSFET characteristics at low temperature." Thesis, 1998. http://ndltd.ncl.edu.tw/handle/21445052136293516335.

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Sung, Tung-Hao, and 宋東壕. "Backscattering-Oriented MOSFET Mismatch Experiment." Thesis, 2008. http://ndltd.ncl.edu.tw/handle/12720514739231663603.

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碩士<br>國立交通大學<br>電子工程系所<br>96<br>In this thesis, we have derived several mathematical models to express the mismatch properties of MOS transistors based on the backscattering theory. We have extracted the KBT layer’s width from the experimental analysis and we have found a simple model to express its mismatch properties based on the parabolic potential barrier. The mean-free-path and the backscattering coefficient have also been discussed in this thesis. For the purpose of the accuracy, the source/drain series resistance has been incorporated in to our parameters extraction. Straightforwardly

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"The extraction of MOSFET parameters." Chinese University of Hong Kong, 1988. http://library.cuhk.edu.hk/record=b5886228.

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