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Journal articles on the topic 'MoTe2-MoS2'

Author: Grafiati

Published: 6 September 2023

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1

Zhu, Xuesong, Dahao Wu, Shengzhi Liang, and Jing Liu. "Strain insensitive flexible photodetector based on molybdenum ditelluride/molybdenum disulfide heterostructure." Nanotechnology 34, no. 15 (2023): 155502. http://dx.doi.org/10.1088/1361-6528/acb359.

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Abstract Flexible electronic and optoelectronic devices are highly desirable for various emerging applications, such as human-computer interfaces, wearable medical electronics, flexible display, etc. Layered two-dimensional (2D) material is one of the most promising types of materials to develop flexible devices due to its atomically thin thickness, which gives it excellent flexibility and mechanical endurance. However, the 2D material devices fabricated on flexible substrate inevitably suffer from mechanical deformation, which can severely affect device performances, resulting in function deg

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2

Grajcarova, Liliana, Michaela Riflikova, Roman Martonak, and Erio Tosatti. "Structural and electronic behaviour of MoS2, MoSe2and MoTe2at high pressure." Acta Crystallographica Section A Foundations and Advances 70, a1 (2014): C1619. http://dx.doi.org/10.1107/s2053273314083806.

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Using ab initio calculations and metadynamics simulations we studied the behaviour of layered semiconducting transition metal dichalcogenides, MoX2 (X = S, Se, Te) at high pressure with focus on structural transitions and metallization [1,2]. We found that concerning structure, the behaviour of MoS2 is different from that of MoSe2 and MoTe2. In MoS2 pressure induces at 20 GPa a structural transition where layer sliding takes place, bringing the initial 2Hc stacking to a 2Ha stacking typical of e.g. 2H-NbSe2. This finding naturally explains previous X-ray diffraction and Raman spectroscopy data

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3

Park, Do-Hyun, and Hyo Chan Lee. "Photogating Effect of Atomically Thin Graphene/MoS2/MoTe2 van der Waals Heterostructures." Micromachines 14, no. 1 (2023): 140. http://dx.doi.org/10.3390/mi14010140.

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The development of short-wave infrared photodetectors based on various two-dimensional (2D) materials has recently attracted attention because of the ability of these devices to operate at room temperature. Although van der Waals heterostructures of 2D materials with type-II band alignment have significant potential for use in short-wave infrared photodetectors, there is a need to develop photodetectors with high photoresponsivity. In this study, we investigated the photogating of graphene using a monolayer-MoS2/monolayer-MoTe2 van der Waals heterostructure. By stacking MoS2/MoTe2 on graphene,

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4

Hibino, Y., S. Ishihara, N. Sawamoto, et al. "Investigation on MoS2(1-x)Te2x Mixture Alloy Fabricated by Co-sputtering Deposition." MRS Advances 2, no. 29 (2017): 1557–62. http://dx.doi.org/10.1557/adv.2017.125.

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ABSTRACTWe report the synthesis of MoS2(1-x)Te2x by co-sputtering deposition and effect of mixture on its bandgap. The deposition was carried out at room temperature, and the sputtering power on individual MoS2 and MoTe2 targets were varied to obtain films with different compositions. Investigation with X-ray photoelectron spectroscopy confirmed the formation of Mo-Te and Mo-S bonds after post-deposition annealing (PDA), and one of the samples exhibited composition ratio of Mo:S:Te = 1:1.2:0.8 and 1:1.9:0.1 achieving 1:2 ratio of metal to chalcogen. Bandgap of MoS1.2Te0.8 and MoS1.9Te0.1 was e

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5

Chikukwa, Evernice, Edson Meyer, Johannes Mbese, and Nyengerai Zingwe. "Colloidal Synthesis and Characterization of Molybdenum Chalcogenide Quantum Dots Using a Two-Source Precursor Pathway for Photovoltaic Applications." Molecules 26, no. 14 (2021): 4191. http://dx.doi.org/10.3390/molecules26144191.

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The drawbacks of utilizing nonrenewable energy have quickened innovative work on practical sustainable power sources (photovoltaics) because of their provision of a better-preserved decent environment which is free from natural contamination and commotion. Herein, the synthesis, characterization, and application of Mo chalcogenide nanoparticles (NP) as alternative sources in the absorber layer of QDSSCs is discussed. The successful synthesis of the NP was confirmed as the results from the diffractive peaks obtained from XRD which were positive and agreed in comparison with the standard. The di

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6

Zazpe, Raul, Hanna Sopha, Jhonatan Rodriguez Pereira, and Jan M. Macak. "Electrocatalytic Applications of 2D Molybdenum Dichalcogenides By Atomic Layer Deposition." ECS Meeting Abstracts MA2022-02, no. 31 (2022): 1150. http://dx.doi.org/10.1149/ma2022-02311150mtgabs.

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2D semiconductor transition metal dichalcogenides have attracted considerable attention due to their layered structure, suitable band gap, electrochemically active unsaturated edges and relatively good stability against photocorrosion. These properties result promising for different applications including, Li-ion batteries, photocatalysis and hydrogen evolution reaction (HER). Apart from the widely studied 2D MoS2, 2D selenide and telluride equivalents, MoSe2 and MoTe2, have recently gained considerable interest due to their higher electrical conductivity, wider inter-layer distance and narrow

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7

Mirabelli, Gioele, Conor McGeough, Michael Schmidt, et al. "Air sensitivity of MoS2, MoSe2, MoTe2, HfS2, and HfSe2." Journal of Applied Physics 120, no. 12 (2016): 125102. http://dx.doi.org/10.1063/1.4963290.

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8

Balaji, Yashwanth, Dan Mocuta, Guido Groeseneken, et al. "Tunneling Transistors Based on MoS2/MoTe2 Van der Waals Heterostructures." IEEE Journal of the Electron Devices Society 6 (2018): 1048–55. http://dx.doi.org/10.1109/jeds.2018.2815781.

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9

Li, Shangdong, Zhenbei He, Yizhen Ke, et al. "Ultra-sensitive self-powered photodetector based on vertical MoTe2/MoS2 heterostructure." Applied Physics Express 13, no. 1 (2019): 015007. http://dx.doi.org/10.7567/1882-0786/ab5e72.

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10

Pan, Shudi, Pavel Valencia-Acuna, Weijin Kong, et al. "Efficient interlayer electron transfer in a MoTe2/WS2/MoS2 trilayer heterostructure." Applied Physics Letters 118, no. 25 (2021): 253106. http://dx.doi.org/10.1063/5.0047909.

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11

Burton, B. P., and A. K. Singh. "Prediction of entropy stabilized incommensurate phases in the system MoS2−MoTe2." Journal of Applied Physics 120, no. 15 (2016): 155101. http://dx.doi.org/10.1063/1.4964868.

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12

Hu, Ruixue, Enxiu Wu, Yuan Xie, and Jing Liu. "Multifunctional anti-ambipolar p-n junction based on MoTe2/MoS2 heterostructure." Applied Physics Letters 115, no. 7 (2019): 073104. http://dx.doi.org/10.1063/1.5109221.

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13

Yao, Hao, Enxiu Wu, and Jing Liu. "Frequency doubler based on a single MoTe2/MoS2 anti-ambipolar heterostructure." Applied Physics Letters 117, no. 12 (2020): 123103. http://dx.doi.org/10.1063/5.0018882.

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14

Fang, Qiyi, Zhepeng Zhang, Qingqing Ji, et al. "Transformation of monolayer MoS2 into multiphasic MoTe2: Chalcogen atom-exchange synthesis route." Nano Research 10, no. 8 (2017): 2761–71. http://dx.doi.org/10.1007/s12274-017-1480-z.

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15

Wang, Feng, Lei Yin, Zhen Xing Wang, et al. "Configuration-Dependent Electrically Tunable Van der Waals Heterostructures Based on MoTe2/MoS2." Advanced Functional Materials 26, no. 30 (2016): 5499–506. http://dx.doi.org/10.1002/adfm.201601349.

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16

Chen, Yan, Xudong Wang, Guangjian Wu, et al. "High-Performance Photovoltaic Detector Based on MoTe2 /MoS2 Van der Waals Heterostructure." Small 14, no. 9 (2018): 1703293. http://dx.doi.org/10.1002/smll.201703293.

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17

Quan, Chenjing, Chunhui Lu, Chuan He, et al. "Band Alignment of MoTe2 /MoS2 Nanocomposite Films for Enhanced Nonlinear Optical Performance." Advanced Materials Interfaces 6, no. 5 (2019): 1801733. http://dx.doi.org/10.1002/admi.201801733.

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18

Hibino, Yusuke, Kota Yamazaki, Yusuke Hashimoto, et al. "The Physical and Chemical Properties of MoS2(1-x)Te2x Alloy Synthesized by Co-sputtering and Chalcogenization and Their Dependence on Fabrication Conditions." MRS Advances 5, no. 31-32 (2020): 1635–42. http://dx.doi.org/10.1557/adv.2020.170.

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ABSTRACTMoS2(1-x)Te2x, the alloy of MoS2 and MoTe2 was fabricated with just co-sputtering and the combination of co-sputtering with following thermal treatment in chalcogen ambient. Phase separation, where MoTe2 was segregated rather than S and Te being uniformly distributed, was observed for some samples. From the physical structure evaluation using XRD, it was shown that the samples that was sulfurized after unintentional oxidation during shelf time exhibited no phase separation. It was suggested that oxidation of Mo or amorphous nature of the film at the chalcogenization stage may prevent t

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19

Wang, Jinhua, and Gyaneshwar P. Srivastava. "Tunable Electronic Properties of Lateral Monolayer Transition Metal Dichalcogenide Superlattice Nanoribbons." Nanomaterials 11, no. 2 (2021): 534. http://dx.doi.org/10.3390/nano11020534.

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The structural stability and structural and electronic properties of lateral monolayer transition metal chalcogenide superlattice zigzag and armchair nanoribbons have been studied by employing a first-principles method based on the density functional theory. The main focus is to study the effects of varying the width and periodicity of nanoribbon, varying cationic and anionic elements of superlattice parent compounds, biaxial strain, and nanoribbon edge passivation with different elements. The band gap opens up when the (MoS2)3/(WS2)3 and (MoS2)3/(MoTe2)3 armchair nanoribbons are passivated by

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20

DiCamillo, Kyle, Sergiy Krylyuk, Wendy Shi, Albert Davydov, and Makarand Paranjape. "Automated Mechanical Exfoliation of MoS2 and MoTe2 Layers for Two-Dimensional Materials Applications." IEEE Transactions on Nanotechnology 18 (2019): 144–48. http://dx.doi.org/10.1109/tnano.2018.2868672.

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21

Duong, Ngoc Thanh, Juchan Lee, Seungho Bang, Chulho Park, Seong Chu Lim, and Mun Seok Jeong. "Modulating the Functions of MoS2/MoTe2 van der Waals Heterostructure via Thickness Variation." ACS Nano 13, no. 4 (2019): 4478–85. http://dx.doi.org/10.1021/acsnano.9b00014.

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22

Wu, Enxiu, Yuan Xie, Qingzhou Liu, et al. "Photoinduced Doping To Enable Tunable and High-Performance Anti-Ambipolar MoTe2/MoS2 Heterotransistors." ACS Nano 13, no. 5 (2019): 5430–38. http://dx.doi.org/10.1021/acsnano.9b00201.

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23

Hussain, Sajjad, Supriya A. Patil, Dhanasekaran Vikraman, et al. "Enhanced electrocatalytic properties in MoS2/MoTe2 hybrid heterostructures for dye-sensitized solar cells." Applied Surface Science 504 (February 2020): 144401. http://dx.doi.org/10.1016/j.apsusc.2019.144401.

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24

Fan, Xaiofeng, David J. Singh, Q. Jiang, and W. T. Zheng. "Pressure evolution of the potential barriers of phase transition of MoS2, MoSe2 and MoTe2." Physical Chemistry Chemical Physics 18, no. 17 (2016): 12080–85. http://dx.doi.org/10.1039/c6cp00715e.

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25

DeGregorio, Zachary P., Youngdong Yoo, and James E. Johns. "Aligned MoO2/MoS2 and MoO2/MoTe2 Freestanding Core/Shell Nanoplates Driven by Surface Interactions." Journal of Physical Chemistry Letters 8, no. 7 (2017): 1631–36. http://dx.doi.org/10.1021/acs.jpclett.7b00307.

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26

Li, Chao, Xiao Yan, Xiongfei Song, et al. "WSe2/MoS2 and MoTe2/SnSe2 van der Waals heterostructure transistors with different band alignment." Nanotechnology 28, no. 41 (2017): 415201. http://dx.doi.org/10.1088/1361-6528/aa810f.

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27

Zribi, Rayhane, and Giovanni Neri. "Mo-Based Layered Nanostructures for the Electrochemical Sensing of Biomolecules." Sensors 20, no. 18 (2020): 5404. http://dx.doi.org/10.3390/s20185404.

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Mo-based layered nanostructures are two-dimensional (2D) nanomaterials with outstanding characteristics and very promising electrochemical properties. These materials comprise nanosheets of molybdenum (Mo) oxides (MoO2 and MoO3), dichalcogenides (MoS2, MoSe2, MoTe2), and carbides (MoC2), which find application in electrochemical devices for energy storage and generation. In this feature paper, we present the most relevant characteristics of such Mo-based layered compounds and their use as electrode materials in electrochemical sensors. In particular, the aspects related to synthesis methods, s

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28

Ahuja, Ushma, Ritu Joshi, D. C. Kothari, Harpal Tiwari, and K. Venugopalan. "Optical Response of Mixed Molybdenum Dichalcogenides for Solar Cell Applications Using the Modified Becke–Johnson Potential." Zeitschrift für Naturforschung A 71, no. 3 (2016): 213–23. http://dx.doi.org/10.1515/zna-2015-0393.

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AbstractEnergy bands and density of states (DOS) of mixed molybdenum dichalcogenides like MoS2, MoSeS, MoSe2, MoTe2, MoTeS, and MoTe0.5S1.5 are reported for the first time using the Tran–Blaha modified Becke–Johnson potential within full potential-linearised augmented plane wave technique. From the partial DOS, a strong hybridisation between the Mo-d and chalcogen-p states is observed below the Fermi energy EF. In addition, the dielectric constants, absorption coefficients, and refractivity spectra of these compounds have also been deduced. The integrated absorption coefficients derived from t

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29

Du, Wanying, Xionghui Jia, Zhixuan Cheng, Wanjing Xu, Yanping Li, and Lun Dai. "Low-power-consumption CMOS inverter array based on CVD-grown p-MoTe2 and n-MoS2." iScience 24, no. 12 (2021): 103491. http://dx.doi.org/10.1016/j.isci.2021.103491.

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30

Ding, Yao, Nan Zhou, Lin Gan, et al. "Stacking-mode confined growth of 2H-MoTe2/MoS2 bilayer heterostructures for UV–vis–IR photodetectors." Nano Energy 49 (July 2018): 200–208. http://dx.doi.org/10.1016/j.nanoen.2018.04.055.

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31

Shang, Ju Ying, Michael J. Moody, Jiazhen Chen, et al. "In Situ Transport Measurements Reveal Source of Mobility Enhancement of MoS2 and MoTe2 during Dielectric Deposition." ACS Applied Electronic Materials 2, no. 5 (2020): 1273–79. http://dx.doi.org/10.1021/acsaelm.0c00085.

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32

Zhang, Kenan, Tianning Zhang, Guanghui Cheng, et al. "Interlayer Transition and Infrared Photodetection in Atomically Thin Type-II MoTe2/MoS2 van der Waals Heterostructures." ACS Nano 10, no. 3 (2016): 3852–58. http://dx.doi.org/10.1021/acsnano.6b00980.

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33

Geng, W. T., V. Wang, Y. C. Liu, T. Ohno, and J. Nara. "Moiré Potential, Lattice Corrugation, and Band Gap Spatial Variation in a Twist-Free MoTe2/MoS2 Heterobilayer." Journal of Physical Chemistry Letters 11, no. 7 (2020): 2637–46. http://dx.doi.org/10.1021/acs.jpclett.0c00605.

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34

Chen, Yan, Xudong Wang, Guangjian Wu, et al. "Optoelectronics: High-Performance Photovoltaic Detector Based on MoTe2 /MoS2 Van der Waals Heterostructure (Small 9/2018)." Small 14, no. 9 (2018): 1870038. http://dx.doi.org/10.1002/smll.201870038.

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35

Wang, Bin, Shengxue Yang, Cong Wang, et al. "Enhanced current rectification and self-powered photoresponse in multilayer p-MoTe2/n-MoS2 van der Waals heterojunctions." Nanoscale 9, no. 30 (2017): 10733–40. http://dx.doi.org/10.1039/c7nr03445h.

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36

Duong, Ngoc Thanh, Seungho Bang, Seung Mi Lee, et al. "Parameter control for enhanced peak-to-valley current ratio in a MoS2/MoTe2 van der Waals heterostructure." Nanoscale 10, no. 26 (2018): 12322–29. http://dx.doi.org/10.1039/c8nr01711e.

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37

Cristiano, Michele N., Ted V. Tsoulos, and Laura Fabris. "Quantifying and optimizing photocurrent via optical modeling of gold nanostar-, nanorod-, and dimer-decorated MoS2 and MoTe2." Journal of Chemical Physics 152, no. 1 (2020): 014705. http://dx.doi.org/10.1063/1.5127279.

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38

Amory, C., J. C. Bernède, and N. Hamdadou. "A study of textured non-stoichiometric MoTe2 thin films used as substrates for textured stoichiometric MoS2 thin films." Vacuum 72, no. 4 (2004): 351–61. http://dx.doi.org/10.1016/j.vacuum.2003.09.001.

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39

Ahn, Jongtae, Ji-Hoon Kang, Jihoon Kyhm, et al. "Self-Powered Visible–Invisible Multiband Detection and Imaging Achieved Using High-Performance 2D MoTe2/MoS2 Semivertical Heterojunction Photodiodes." ACS Applied Materials & Interfaces 12, no. 9 (2020): 10858–66. http://dx.doi.org/10.1021/acsami.9b22288.

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40

Khan, Md Azmot Ullah, Naheem Olakunle Adesina, and Jian Xu. "Near Unity Absorbance and Photovoltaic Properties of TMDC/Gold Heterojunction for Solar Cell Application." Key Engineering Materials 918 (April 25, 2022): 97–105. http://dx.doi.org/10.4028/p-uz62m4.

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In this paper, near unity broadband absorption of Van der Waals semiconductors on a metallic substrate, and their photovoltaic performances in the visible spectrum are simulated. Ultrathin layered semiconductors such as Molybdenum disulfide (MoS2), Tungsten disulfide (WS2), Molybdenum di-selenide (MoSe2), Tungsten di-selenide (WSe2), Molybdenum ditelluride (MoTe2), and Tungsten ditelluride (WTe2) can create strong interference by damping optical mode in their multilayer form and increase light absorption at their heterojunctions with noble metals. From our simulation, it is observed that this

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41

Khan, Md Azmot Ullah, Naheem Olakunle Adesina, and Jian Xu. "Near Unity Absorbance and Photovoltaic Properties of TMDC/Gold Heterojunction for Solar Cell Application." Key Engineering Materials 918 (April 25, 2022): 97–105. http://dx.doi.org/10.4028/p-uz62m4.

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In this paper, near unity broadband absorption of Van der Waals semiconductors on a metallic substrate, and their photovoltaic performances in the visible spectrum are simulated. Ultrathin layered semiconductors such as Molybdenum disulfide (MoS2), Tungsten disulfide (WS2), Molybdenum di-selenide (MoSe2), Tungsten di-selenide (WSe2), Molybdenum ditelluride (MoTe2), and Tungsten ditelluride (WTe2) can create strong interference by damping optical mode in their multilayer form and increase light absorption at their heterojunctions with noble metals. From our simulation, it is observed that this

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42

Late, Dattatray J., and Claudia Wiemer. "Advances in low dimensional and 2D materials." AIP Advances 12, no. 11 (2022): 110401. http://dx.doi.org/10.1063/5.0129120.

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This special issue is focused on the advances in low-dimensional and 2D materials. 2D materials have gained much consideration recently due to their extraordinary properties. Since the isolation of single-layer graphene in Novoselov et al. [Science 306, 666–669 (2004)], the work on graphene analogs of 2D materials has progressed rapidly across the scientific and engineering fields. Over the last ten years, several 2D materials have been widely explored for technological applications. Moreover, the existence in nature of layered crystallographic structures where exotic properties emerge when th

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43

Gomes, Anderson S. L., Cecília L. A. V. Campos, Cid B. de Araújo, et al. "Intensity-Dependent Optical Response of 2D LTMDs Suspensions: From Thermal to Electronic Nonlinearities." Nanomaterials 13, no. 15 (2023): 2267. http://dx.doi.org/10.3390/nano13152267.

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The nonlinear optical (NLO) response of photonic materials plays an important role in the understanding of light–matter interaction as well as pointing out a diversity of photonic and optoelectronic applications. Among the recently studied materials, 2D-LTMDs (bi-dimensional layered transition metal dichalcogenides) have appeared as a beyond-graphene nanomaterial with semiconducting and metallic optical properties. In this article, we review most of our work in studies of the NLO response of a series of 2D-LTMDs nanomaterials in suspension, using six different NLO techniques, namely hyper Rayl

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44

Wang, Yaqian, Yongli Shen, Xiong Xiao, Linxiu Dai, Shuang Yao, and Changhua An. "Topology conversion of 1T MoS2 to S-doped 2H-MoTe2 nanosheets with Te vacancies for enhanced electrocatalytic hydrogen evolution." Science China Materials 64, no. 9 (2021): 2202–11. http://dx.doi.org/10.1007/s40843-020-1612-y.

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45

Xie, Yuan, Enxiu Wu, Shuangqing Fan, et al. "Modulation of MoTe2/MoS2 van der Waals heterojunctions for multifunctional devices using N2O plasma with an opposite doping effect." Nanoscale 13, no. 16 (2021): 7851–60. http://dx.doi.org/10.1039/d0nr08814e.

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We developed a highly effective N<sub>2</sub>O plasma process to treat MoTe<sub>2</sub>/MoS<sub>2</sub> heterojunctions. This allowed us to adjust the hole and electron concentrations in the two materials independently and simultaneously through a single-step treatment.

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46

Diaz, Horacio Coy, Yujing Ma, Redhouane Chaghi, and Matthias Batzill. "High density of (pseudo) periodic twin-grain boundaries in molecular beam epitaxy-grown van der Waals heterostructure: MoTe2/MoS2." Applied Physics Letters 108, no. 19 (2016): 191606. http://dx.doi.org/10.1063/1.4949559.

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47

Pezeshki, Atiye, Seyed Hossein Hosseini Shokouh, Pyo Jin Jeon та ін. "Static and Dynamic Performance of Complementary Inverters Based on Nanosheet α-MoTe2 p-Channel and MoS2 n-Channel Transistors". ACS Nano 10, № 1 (2015): 1118–25. http://dx.doi.org/10.1021/acsnano.5b06419.

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48

Cho, Yongjae, Ji Hoon Park, Minju Kim, et al. "Impact of Organic Molecule-Induced Charge Transfer on Operating Voltage Control of Both n-MoS2 and p-MoTe2 Transistors." Nano Letters 19, no. 4 (2019): 2456–63. http://dx.doi.org/10.1021/acs.nanolett.9b00019.

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49

Caturello, Naidel A. M. S., Rafael Besse, Augusto C. H. Da Silva, Diego Guedes-Sobrinho, Matheus P. Lima, and Juarez L. F. Da Silva. "Ab Initio Investigation of Atomistic Insights into the Nanoflake Formation of Transition-Metal Dichalcogenides: The Examples of MoS2, MoSe2, and MoTe2." Journal of Physical Chemistry C 122, no. 47 (2018): 27059–69. http://dx.doi.org/10.1021/acs.jpcc.8b07127.

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50

Varadwaj, Pradeep, Helder Marques, Arpita Varadwaj, and Koichi Yamashita. "Chalcogen···Chalcogen Bonding in Molybdenum Disulfide, Molybdenum Diselenide and Molybdenum Ditelluride Dimers as Prototypes for a Basic Understanding of the Local Interfacial Chemical Bonding Environment in 2D Layered Transition Metal Dichalcogenides." Inorganics 10, no. 1 (2022): 11. http://dx.doi.org/10.3390/inorganics10010011.

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An attempt was made, using computational methods, to understand whether the intermolecular interactions in the dimers of molybdenum dichalcogenides MoCh2 (Ch = chalcogen, element of group 16, especially S, Se and Te) and similar mixed-chalcogenide derivatives resemble the room temperature experimentally observed interactions in the interfacial regions of molybdenites and their other mixed-chalcogen derivatives. To this end, MP2(Full)/def2-TVZPPD level electronic structure calculations on nine dimer systems, including (MoCh2)2 and (MoChCh′2)2 (Ch, Ch′ = S, Se and Te), were carried out not only

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