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Journal articles on the topic 'Mott-Schottky'

Author: Grafiati

Published: 4 June 2021

Last updated: 9 March 2023

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1

Fattah-alhosseini, A., M. H. Alemi, and S. Banaei. "Diffusivity of Point Defects in the Passive Film on Stainless Steel." International Journal of Electrochemistry 2011 (2011): 1–6. http://dx.doi.org/10.4061/2011/968512.

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The semiconductor properties of passive films formed on AISI 316 stainless steel in sulfuric acid solution were studied by employing Mott-Schottky analysis in conjunction with the point defect model. The donor density of the passive films, which can be estimated by the Mott-Schottky plots, changes depending on the film formation potentials. Based on the Mott-Schottky analysis, an exponential relationship between donor density and the film formation potentials of the passive films was developed. The results showed that the donor densities evaluated from Mott-Schottky plots are in the range 2-3 × 1021 cm−3and decreased with the film formation potential. By assuming that the donors are oxygen ion vacancies and/or cation interstitials, the diffusion coefficient of the donors, (), is calculated to be approximately 3.12 × 10−16 cm2/s.

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2

Rajbhandari, A., K. Manandhar, and R. R. Pradhananga. "Mott-Schottky Analysis of Laboratory Prepared Ag2S-AgI Membrane Electrode." Journal of Nepal Chemical Society 28 (May 23, 2013): 89–93. http://dx.doi.org/10.3126/jncs.v28i0.8113.

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Mott-Schottky analysis has been carried out to study the semiconducting behavior of Ag2S-AgI material, which is used as membrane material in iodide ion sensors. Polycrystalline Ag2S-AgI materials with mixing ratios 1:1wasprepared by co-precipitation method and Mott-Schottky analysis was carried out. The impedance was recorded using a Solartron 1280 Schlumberger frequency response analyzer at 5 KHz and 10 mV perturbing signal. A straight line with a positive slope is observed between + 0.2 V to -0.2 V (SSE) indicating n-type semiconductor behavior of polycrystalline Ag2S-AgI membrane. The donor concentration ND was calculated from the slope using dielectric constant of Ag2S-AgI. The values obtained are ~ 6 orders of magnitude lower than in metals. This is an important implication for the charge and potential distribution at the semiconductor/electrolyte interface. The Mott Schottky analysis hasshown that the present materials are n-type semiconductors with donor defect concentration of 7.4x1017/cm3. DOI: http://dx.doi.org/10.3126/jncs.v28i0.8113 Journal of Nepal Chemical Society Vol. 28, 2011 Page: 89-93 Uploaded Date: May 24, 2013

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3

LI, YULIN, JUNJIE WANG, and QINGDONG ZHONG. "A NOVEL METHOD FOR STUDYING THE CORROSION RESISTANCE AND MICROSTRUCTURE OF ENAMEL COATING MODIFIED ON HIGH-STRENGTH STEEL IN 3.5 wt.% NaCl SOLUTION." Surface Review and Letters 27, no. 02 (May 27, 2019): 1950098. http://dx.doi.org/10.1142/s0218625x19500987.

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A new method was introduced to research the corrosion resistance of enamel coatings which were sintered at different temperatures in this paper. 1 – 4 Scanning electrochemical microscopy (SECM) conjunction with capacitance-potential test and Mott–Schottky analysis technique were used to study the coating failure process and semiconductor conduction behavior of enamel coating in 3.5[Formula: see text]wt.% NaCl solution. The high strength steel (SAPH440) was selected as the metal substrate. The coatings which were sintered at different temperatures on the high strength steel were analyzed and their corrosion behaviors and microstructures were also measured by potentiodynamic polarization curves, Mott–Schottky analysis technique and scanning electrochemical microscopy. 5 – 10 In this paper, five kinds of enamel coatings were prepared on high strength steel. The SECM results show that the Faraday current of the microprobe tip gradually decreases with the soaking time increasing, which indicates that the coatings become failure slowly with the invasion of water and aggressive ions. At the same time, the tip current was homogeneous during the immersion process, which reflected that the surface of the sample remained stable, no obvious bulges appeared. Capacitance–potential test and Mott–Schottky analysis 7 , 8 show that the external ions and water molecules gradually penetrate into the coating; coating showed characteristics of [Formula: see text]-type semiconductor as time increases, the capacitance increases gradually, the space charge layer thickness decreases, slope of Mott–Schottky curve decreased gradually which indicates that the failure of coating in the process of soaking slowly with the charge carrier density increases.

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4

Wu, Peiwen, Zili Wu, David R. Mullins, Shi-Ze Yang, Xue Han, Yafen Zhang, Guo Shiou Foo, et al. "Promoting Pt catalysis for CO oxidation via the Mott–Schottky effect." Nanoscale 11, no. 40 (2019): 18568–74. http://dx.doi.org/10.1039/c9nr04055b.

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5

Polozhentseva J.A., Alekseeva E.V., and Karushev M.P. "Semiconductor Properties of Polymer Films Based on Nickel Complexwith Salen-type Ligand." Physics of the Solid State 64, no. 1 (2022): 62. http://dx.doi.org/10.21883/pss.2022.01.52489.166.

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Metal complexes of Schiff bases are considered as promising materialsfor energy storage and photovoltaic devices. In this work, thesemiconducting properties of a polymer film of a nickel salen-type complex(poly-Ni(CH3O-Salen)) were studied by spectrophotometric and electrochemicalimpedance spectroscopy methods. The Mott-Schottky analysis showed that the polymerfilm is a semiconducting material with a fairly narrow band gap, high chargecarrier density and p-type conductivity. Using the method of electrochemicalimpedance spectroscopy, the limiting stage of the oxygenphotoelectroreduction reaction, the process of charge transfer from the filmto molecular oxygen, has been established. Keywords: Schiff bases, Mott-Schottky analysis, photovoltaic devices, semiconductor properties.\

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6

Liu, Jing, Akram Alfantazi, and Edouard Asselin. "The Effect of Chloride Ions on the Passive Films of Titanium in Sulfuric Acids." Solid State Phenomena 227 (January 2015): 67–70. http://dx.doi.org/10.4028/www.scientific.net/ssp.227.67.

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The effect of chloride ions on the passivity of titanium in sulfuric acids was investigated by potentiodynamic and potentiostatic anodizing, Mott-Schottky analysis and the point defect model (PDM). The anodizing results indicated that chloride ions facilitate the anodic passivity of titanium in sulfuric acids. Based on the Mott-Schottky analysis in conjunction with the PDM, it was shown that the donor density decreases exponentially with increasing film formation potential. Also, the results indicated that with the increasing concentration of chloride ions, the donor density decreases, while the diffusivity of the donors increases at the same film formation potential.

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7

Zhang, Guangqiang, Hong Su, and Yan Zhang. "Construction of Glutinous Rice Potpourri-like MOTT−Schottky Ni/CeO2 Heterojunction Nanosheets for Robust Electrochemical Water Reduction." Energies 15, no. 24 (December 13, 2022): 9443. http://dx.doi.org/10.3390/en15249443.

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The development of efficient non-precious metal electrocatalysts through more economical and safe methods is consistent with the goals of sustainable development and accelerating the achievement of “carbon neutrality” in the 21st century but remains potentially challenging. Mott–Schottky heterojunction interfaces generated from metal/semiconductor have been a hot topic of recent research because of the unique built-in electric field effect which allows the preparation of more superior catalysts for water electrolysis. Herein, a glutinous rice potpourri-like Mott–Schottky two-dimensional (2D) nanosheet (abbreviated as Ni/CeO2 HJ-NSs) electrocatalyst composed of metal nickel (Ni) and cerium oxide (CeO2) hetero-nanoparticles was synthesized by a simple and scalable self-assembly and thermal reduction strategy. The experimental results and mechanistic analysis show that the Mott–Schottky heterojunction interface composed of metallic Ni and n-type semiconductor CeO2 with built-in electric field induces the electron redistribution at the interface to accelerate the dissociation of water and the binding of reaction intermediates, thus achieving lower water dissociation energy and more thermoneutral ΔGH* value to expedite the kinetics of the hydrogen evolution reaction (HER). Thus, the prepared Ni/CeO2 HJ-NSs exhibit excellent HER catalytic performance in 1 M KOH electrolyte with an overpotential of only 72 mV at 10 mA cm−2, as well as a moderate Tafel slope of 65 mV dec−1 and an extraordinary long-term stability over 50 h, laying a solid foundation for further in-depth investigation. The synthesis of splendid electrocatalysts by exploiting the metal/semiconductor interface effect provides an innovative way for the future generation of Mott–Schottky-based heterostructures with three or more heterocompositions with two or more heterojunction interfaces.

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8

Xu, Shao-Hong, Jing-Feng Wang, Alexsandra Valério, Wen-Yu Zhang, Jia-Lun Sun, and Dan-Nong He. "Activating Co nanoparticles on graphitic carbon nitride by tuning the Schottky barrier via P doping for the efficient dehydrogenation of ammonia-borane." Inorganic Chemistry Frontiers 8, no. 1 (2021): 48–58. http://dx.doi.org/10.1039/d0qi00659a.

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A highly active Mott–Schottky nanocatalyst for the efficient dehydrogenation of ammonia-borane was constructed by rationally tuning the Schottky barrier of Co/P_xCN (P-doped g-C₃N₄) via simply varying the doping amount of P atoms.

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9

Zhong, Hong, Can Yang, Lizhou Fan, Zhihua Fu, Xue Yang, Xinchen Wang, and Ruihu Wang. "Dyadic promotion of photocatalytic aerobic oxidation via the Mott–Schottky effect enabled by nitrogen-doped carbon from imidazolium-based ionic polymers." Energy & Environmental Science 12, no. 1 (2019): 418–26. http://dx.doi.org/10.1039/c8ee02727g.

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10

Hankin, Anna, Franky E. Bedoya-Lora, John C. Alexander, Anna Regoutz, and Geoff H. Kelsall. "Flat band potential determination: avoiding the pitfalls." Journal of Materials Chemistry A 7, no. 45 (2019): 26162–76. http://dx.doi.org/10.1039/c9ta09569a.

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11

LaGasse, Samuel W., Prathamesh Dhakras, Kenji Watanabe, Takashi Taniguchi, and Ji Ung Lee. "Schottky-Mott Limit: Gate-Tunable Graphene-WSe2 Heterojunctions at the Schottky-Mott Limit (Adv. Mater. 24/2019)." Advanced Materials 31, no. 24 (June 2019): 1970169. http://dx.doi.org/10.1002/adma.201970169.

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12

Wang, Yuankun, Ruifang Zhang, Zehui Sun, Hu Wu, Shiyao Lu, Jianan Wang, Wei Yu, Jiamei Liu, Guoxin Gao, and Shujiang Ding. "Mott‐Schottky Electrocatalyst: Spontaneously Formed Mott‐Schottky Electrocatalyst for Lithium‐Sulfur Batteries (Adv. Mater. Interfaces 22/2020)." Advanced Materials Interfaces 7, no. 22 (November 2020): 2070122. http://dx.doi.org/10.1002/admi.202070122.

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13

Cao, X. Y., X. Xing, N. Zhang, H. Gao, M. Y. Zhang, Y. C. Shang, and X. T. Zhang. "Quantitative investigation on the effect of hydrogenation on the performance of MnO2/H-TiO2 composite electrodes for supercapacitors." Journal of Materials Chemistry A 3, no. 7 (2015): 3785–93. http://dx.doi.org/10.1039/c4ta06138a.

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14

Jin, Dongnv, Jiliang Ma, and Runcang Sun. "Nitrogen-doped biochar nanosheets facilitate charge separation of a Bi/Bi₂O₃ nanosphere with a Mott–Schottky heterojunction for efficient photocatalytic reforming of biomass." Journal of Materials Chemistry C 10, no. 9 (2022): 3500–3509. http://dx.doi.org/10.1039/d1tc05931a.

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15

Huang, Yuan, Haoting Yan, Chenyang Zhang, Yize Wang, Qinhong Wei, and Renkun Zhang. "Interfacial Electronic Effects in Co@N-Doped Carbon Shells Heterojunction Catalyst for Semi-Hydrogenation of Phenylacetylene." Nanomaterials 11, no. 11 (October 20, 2021): 2776. http://dx.doi.org/10.3390/nano11112776.

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Metal-supported catalyst with high activity and relatively simple preparation method is given priority to industrial production. In this work, this study reported an easily accessible synthesis strategy to prepare Mott-Schottky-type N-doped carbon encapsulated metallic Co (Co@Np+gC) catalyst by high-temperature pyrolysis method in which carbon nitride (g-C3N4) and dopamine were used as support and nitrogen source. The prepared Co@Np+gC presented a Mott-Schottky effect; that is, a strong electronic interaction of metallic Co and N-doped carbon shell was constructed to lead to the generation of Mott-Schottky contact. The metallic Co, due to high work function as compared to that of N-doped carbon, transferred electrons to the N-doped outer shell, forming a new contact interface. In this interface area, the positive and negative charges were redistributed, and the catalytic hydrogenation mainly occurred in the area of active charges. The Co@Np+gC catalyst showed excellent catalytic activity in the hydrogenation of phenylacetylene to styrene, and the selectivity of styrene reached 82.4%, much higher than those of reference catalysts. The reason for the promoted semi-hydrogenation of phenylacetylene was attributed to the electron transfer of metallic Co, as it was caused by N doping on carbon.

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16

Braun, Christian M., Akira Fujishima, and Kenichi Honda. "THE FREQUENCY DEPENDENCE OF MOTT–SCHOTTKY PLOTS." Chemistry Letters 14, no. 11 (November 5, 1985): 1763–66. http://dx.doi.org/10.1246/cl.1985.1763.

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17

Windisch, Charles F., and Gregory J. Exarhos. "Mott–Schottky analysis of thin ZnO films." Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 18, no. 4 (July 2000): 1677–80. http://dx.doi.org/10.1116/1.582406.

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18

Díez-García, María I., Damián Monllor-Satoca, and Roberto Gómez. "Comment on “Flat band potential determination: avoiding the pitfalls” by A. Hankin, F. E. Bedoya-Lora, J. C. Alexander, A. Regoutz and G. H. Kelsall, J. Mater. Chem. A, 2019, 7, 26162." Journal of Materials Chemistry A 10, no. 15 (2022): 8591–93. http://dx.doi.org/10.1039/d1ta06474f.

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19

Wu, Mengchen, Jing Zhao, Congling Li, and Rui Liu. "Heterogeneity in a metal–organic framework in situ guides engineering Co@CoO heterojunction for electrocatalytic H₂ production in tandem with glucose oxidation." Journal of Materials Chemistry A 10, no. 9 (2022): 4791–99. http://dx.doi.org/10.1039/d1ta10903k.

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Heterogeneity in metal–organicframeworks (MOFs) guides the engineering of controllable Co@CoO Mott–Schottky heterojunctions on N-doped graphene, which could drive energy-saving H2 production device in tandem with glucose oxidization.

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20

Zhao, Yang, Ping Liang, Yanhua Shi, Yunxia Zhang, and Tao Yang. "The Pitting Susceptibility Investigation of Passive Films Formed on X70, X80, and X100 Pipeline Steels by Electrochemical Noise and Mott-Schottky Measurements." International Journal of Corrosion 2015 (2015): 1–10. http://dx.doi.org/10.1155/2015/298584.

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The pitting susceptibility of passive films formed on X70, X80, and X100 pipeline steels was investigated by means of electrochemical noise (EN) and Mott-Schottky measurements. The EN results were analyzed according to the shot-noise theory and stochastic theory. Pit initiation process was analyzed quantitatively using the Weibull distribution function. Pit growth process was simulated by Gumbel distribution function. The experimental results of Mott-Schottky plots showed that the passive films formed on the three pipeline steels displayed an n-type semiconductor character, and the passive film for X100 pipeline steel has the lowest donor density (ND) among the three passive films. The EN results demonstrated that X100 pipeline steel had the lowest pit initiation rate and pit growth probability, which implied that the X100 pipeline steel had the lowest pitting susceptibility.

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21

Liang, Ranxi, Chaozhu Shu, Anjun Hu, Chenxi Xu, Ruixin Zheng, Minglu Li, Yaowen Guo, Miao He, Yu Yan, and Jianping Long. "Tuning the electronic band structure of Mott–Schottky heterojunctions modified with surface sulfur vacancy achieves an oxygen electrode with high catalytic activity for lithium–oxygen batteries." Journal of Materials Chemistry A 8, no. 22 (2020): 11337–45. http://dx.doi.org/10.1039/d0ta02970j.

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22

Fredj, Zina, Abdoullatif Baraket, Mounir Ben Ali, Nadia Zine, Miguel Zabala, Joan Bausells, Abdelhamid Elaissari, Nsikak U. Benson, Nicole Jaffrezic-Renault, and Abdelhamid Errachid. "Capacitance Electrochemical pH Sensor Based on Different Hafnium Dioxide (HfO2) Thicknesses." Chemosensors 9, no. 1 (January 10, 2021): 13. http://dx.doi.org/10.3390/chemosensors9010013.

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Over the past years, to achieve better sensing performance, hafnium dioxide (HfO2) has been studied as an ion-sensitive layer. In this work, thin layers of hafnium dioxide (HfO2) were used as pH-sensitive membranes and were deposited by atomic layer deposition (ALD) process onto an electrolytic-insulating-semiconductor structure Al/Si/SiO2/HfO2 for the realization of a pH sensor. The thicknesses of the layer of the HfO2 studied in this work was 15, 19.5 and 39.9 nm. HfO2 thickness was controlled by ALD during the fabrication process. The sensitivity toward H+ was clearly higher when compared to other interfering ions such as potassium K+, lithium Li+, and sodium Na+ ions. Mott−Schottky and electrochemical impedance spectroscopy (EIS) analyses were used to characterise and to investigate the pH sensitivity. This was recorded by Mott–Schottky at 54.5, 51.1 and 49.2 mV/pH and by EIS at 5.86 p[H−1], 10.63 p[H−1], 12.72 p[H−1] for 15, 19.5 and 30 nm thickness of HfO2 ions sensitive layer, respectively. The developed pH sensor was highly sensitive and selective for H+ ions for the three thicknesses, 15, 19.5 and 39.9 nm, of HfO2-sensitive layer when compared to the other previously mentioned interferences. However, the pH sensor performances were better with 15 nm HfO2 thickness for the Mott–Schottky technique, whilst for EIS analyses, the pH sensors were more sensitive at 39.9 nm HfO2 thickness.

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23

Fredj, Zina, Abdoullatif Baraket, Mounir Ben Ali, Nadia Zine, Miguel Zabala, Joan Bausells, Abdelhamid Elaissari, Nsikak U. Benson, Nicole Jaffrezic-Renault, and Abdelhamid Errachid. "Capacitance Electrochemical pH Sensor Based on Different Hafnium Dioxide (HfO2) Thicknesses." Chemosensors 9, no. 1 (January 10, 2021): 13. http://dx.doi.org/10.3390/chemosensors9010013.

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Over the past years, to achieve better sensing performance, hafnium dioxide (HfO2) has been studied as an ion-sensitive layer. In this work, thin layers of hafnium dioxide (HfO2) were used as pH-sensitive membranes and were deposited by atomic layer deposition (ALD) process onto an electrolytic-insulating-semiconductor structure Al/Si/SiO2/HfO2 for the realization of a pH sensor. The thicknesses of the layer of the HfO2 studied in this work was 15, 19.5 and 39.9 nm. HfO2 thickness was controlled by ALD during the fabrication process. The sensitivity toward H+ was clearly higher when compared to other interfering ions such as potassium K+, lithium Li+, and sodium Na+ ions. Mott−Schottky and electrochemical impedance spectroscopy (EIS) analyses were used to characterise and to investigate the pH sensitivity. This was recorded by Mott–Schottky at 54.5, 51.1 and 49.2 mV/pH and by EIS at 5.86 p[H−1], 10.63 p[H−1], 12.72 p[H−1] for 15, 19.5 and 30 nm thickness of HfO2 ions sensitive layer, respectively. The developed pH sensor was highly sensitive and selective for H+ ions for the three thicknesses, 15, 19.5 and 39.9 nm, of HfO2-sensitive layer when compared to the other previously mentioned interferences. However, the pH sensor performances were better with 15 nm HfO2 thickness for the Mott–Schottky technique, whilst for EIS analyses, the pH sensors were more sensitive at 39.9 nm HfO2 thickness.

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24

Sarkar, Bidushi, Debanjan Das, and Karuna Kar Nanda. "pH-dependent hydrogen evolution using spatially confined ruthenium on hollow N-doped carbon nanocages as a Mott–Schottky catalyst." Journal of Materials Chemistry A 9, no. 24 (2021): 13958–66. http://dx.doi.org/10.1039/d1ta02375f.

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We demonstrate Ru nanoparticles confined on a N-doped hollow carbon matrix as a wide pH hydrogen evolution electrocatalyst. The formation of a Mott–Schottky heterojunction at the strongly coupled Ru/N-doped C interface enhances the catalysis.

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25

Liu, Hu, Xinyang Liu, Weiwei Yang, Mengqi Shen, Shuo Geng, Chao Yu, Bo Shen, and Yongsheng Yu. "Photocatalytic dehydrogenation of formic acid promoted by a superior PdAg@g-C3N4 Mott–Schottky heterojunction." Journal of Materials Chemistry A 7, no. 5 (2019): 2022–26. http://dx.doi.org/10.1039/c8ta11172c.

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The superior PdAg@g-C₃N₄ Mott–Schottky heterojunction exhibits boosting dehydrogenation photocatalysis of formic acid (TOF = 420 h⁻¹) without any additive under visible light (λ > 400 nm) at room temperature.

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26

Harada, T., S. Ito, and A. Tsukazaki. "Electric dipole effect in PdCoO2/β-Ga2O3 Schottky diodes for high-temperature operation." Science Advances 5, no. 10 (October 2019): eaax5733. http://dx.doi.org/10.1126/sciadv.aax5733.

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High-temperature operation of semiconductor devices is widely demanded for switching/sensing purposes in automobiles, plants, and aerospace applications. As alternatives to conventional Si-based Schottky diodes usable only at 200°C or less, Schottky interfaces based on wide-bandgap semiconductors have been extensively studied to realize a large Schottky barrier height that makes high-temperature operation possible. Here, we report a unique crystalline Schottky interface composed of a wide-gap semiconductor β-Ga2O3 and a layered metal PdCoO2. At the thermally stable all-oxide interface, the polar layered structure of PdCoO2 generates electric dipoles, realizing a large Schottky barrier height of ~1.8 eV, well beyond the 0.7 eV expected from the basal Schottky-Mott relation. Because of the naturally formed homogeneous electric dipoles, this junction achieved current rectification with a large on/off ratio approaching 108 even at a high temperature of 350°C. The exceptional performance of the PdCoO2/β-Ga2O3 Schottky diodes makes power/sensing devices possible for extreme environments.

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27

Zhang, Cong Hui, Wei Song, Yao Mian Wang, and Gui Zhi Xiao. "Effect of Surface Strengthening on Corrosion Property of Ti-6Al-4V in 3.5% NaCl." Applied Mechanics and Materials 853 (September 2016): 473–77. http://dx.doi.org/10.4028/www.scientific.net/amm.853.473.

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By means of Ultrasonic shot peening (USSP), a strengthening surface layer was formed on Ti-6Al-4V. The polarization curves with different treatment times were investigated in 3.5% NaCl. The type of semiconductor for passivation film of 30 min treatment was measured by Mott-Schottky curve, and the thickness of the passivation film was calculated.The result of the polarization curves show that the corrosion resistance of the USSP treatment samples is increased by comparing with the untreated sample. Mott-Schottky curve of 30 min USSP treatment sample show that the passive film belongs to n-type semiconductor. The thickness of the passive film is much thicker than the untreated sample. The charge carrier density is smaller than that of untreated sample. These indicate that the surface strengthening improves the corrosion resistance of the Ti-6Al-4V in 3.5% NaCl by forming stable passive film.

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28

Li, Zhen, Candy C. Mercado, Mengjin Yang, Ethan Palay, and Kai Zhu. "Electrochemical impedance analysis of perovskite–electrolyte interfaces." Chemical Communications 53, no. 16 (2017): 2467–70. http://dx.doi.org/10.1039/c6cc10315d.

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The flat band potentials and carrier densities of spin coated and sprayed MAPbI₃, FA_0.85Cs_0.15PbI₃, and MAPbBr₃ perovskite films were determined using the Mott–Schottky relation.

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29

Huang, Y., S. Aharon, A. Rolland, L. Pedesseau, O. Durand, L. Etgar, and J. Even. "Influence of Schottky contact on the C-V and J-V characteristics of HTM-free perovskite solar cells." EPJ Photovoltaics 8 (2017): 85501. http://dx.doi.org/10.1051/epjpv/2017001.

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The influence of the Schottky contact is studied for hole transport material (HTM) free CH3NH3PbI3 perovskite solar cells (PSCs), by using drift-diffusion and small signal models. The basic current-voltage and capacitance-voltage characteristics are simulated in reasonable agreement with experimental data. The build in potential of the finite CH3NH3PbI3 layer is extracted from a Mott-Schottky capacitance analysis. Furthermore, hole collector conductors with work-functions of more than 5.5 eV are proposed as solutions for high efficiency HTM-free CH3NH3PbI3 PSCs.

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30

Surdi, Harshad, Trevor Thornton, Robert J. Nemanich, and Stephen M. Goodnick. "Space charge limited corrections to the power figure of merit for diamond." Applied Physics Letters 120, no. 22 (May 30, 2022): 223503. http://dx.doi.org/10.1063/5.0087059.

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An interpretation of the unipolar figure of merit is formulated for wide bandgap (WBG) semiconductors based on the on-state specific resistance ([Formula: see text]) derived from the space charge limited current–voltage relationship (Mott–Gurney square law). The limitations of the traditional Ohmic [Formula: see text] for WBG semiconductors are discussed, particularly at low doping, while the accuracy of the Mott–Gurney based [Formula: see text] is confirmed by Silvaco ATLAS drift–diffusion simulations of diamond Schottky pin diodes. The effects of incomplete ionization are considered as well.

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31

Décima, Santiago, Eliseo Narciso Díaz, Ana Silvina Fuentes, and Francisco Ángel Filippin. "Propiedades semiconductoras del óxido de Ti sobre sustratos vidrio/Ti y chapa de Ti en contacto con una solución de 0,5 M de HClO4." Revista Tecnología y Ciencia, no. 45 (November 11, 2022): 14–30. http://dx.doi.org/10.33414/rtyc.45.14-30.2022.

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El estudio de la interfase semiconductor/electrolito tiene aplicaciones en la producción de celdas solares fotoelectroquímicas. Las propiedades semiconductoras de un semiconductor de tipo n pueden ser evaluadas mediante el modelo de Mott-Schottky cuando se lo pone en contacto con un electrolito. El titanio (Ti) es un metal que presenta una película de óxido espontánea, dióxido de titanio (TiO2), la cual puede ser crecida por anodización. En este trabajo se crecieron anódicamente películas de óxido de Ti, sobre los sustratos vidrio/Ti y chapa de Ti, y se aplicó el modelo de Mott-Schottky para evaluar sus propiedades semiconductoras en contacto con una solución de 0,5 M de HClO4 a temperatura ambiente. Bajo las condiciones descritas en este trabajo, los electrodos vidrio/Ti/TiO2 y chapa de Ti/TiO2 presentan el comportamiento de un semiconductor de tipo n con una concentración de donadores del orden de y , respectivamente. Las películas de óxido fueron estables antes y después de los experimentos.

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32

Sivula, Kevin. "Mott–Schottky Analysis of Photoelectrodes: Sanity Checks Are Needed." ACS Energy Letters 6, no. 7 (July 9, 2021): 2549–51. http://dx.doi.org/10.1021/acsenergylett.1c01245.

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33

Wang, Yuankun, Ruifang Zhang, Zehui Sun, Hu Wu, Shiyao Lu, Jianan Wang, Wei Yu, Jiamei Liu, Guoxin Gao, and Shujiang Ding. "Spontaneously Formed Mott‐Schottky Electrocatalyst for Lithium‐Sulfur Batteries." Advanced Materials Interfaces 7, no. 22 (September 28, 2020): 1902092. http://dx.doi.org/10.1002/admi.201902092.

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34

Fernández-Hevia, D., J. de Frutos, A. C. Caballero, and J. F. Fernández. "Mott–Schottky behavior of strongly pinned double Schottky barriers and characterization of ceramic varistors." Journal of Applied Physics 92, no. 5 (September 2002): 2890–98. http://dx.doi.org/10.1063/1.1498968.

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35

Mitra, Sanchali, and Santanu Mahapatra. "Schottky–Mott limit in graphene inserted 2D semiconductor–metal interfaces." Journal of Applied Physics 132, no. 14 (October 14, 2022): 145301. http://dx.doi.org/10.1063/5.0106620.

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The insertion of a graphene (or h-BN) layer in a two-dimensional (2D) MoS2–metal interface to de-pin the Fermi level has been a common strategy in experiments. Recently, however, the 2D material space has expanded much beyond transition metal dichalcogenides, and it is not clear if the same strategy will work for other materials. Here, we select a family of twelve emerging, commercially available 2D semiconductors with the work function range of 3.8–6.1 eV and study their interfaces with metals in the presence and absence of the graphene buffer layer. Using the density functional theory, we show that the graphene buffer layer preserves the ideal Schottky–Mott rule to a great extent when the interfaces are made with Ag and Ti. However, the h-BN buffer layer does not yield a similar performance since its electrons are not as localized as graphene. It is further observed that even graphene is not very effective in preserving the ideal Schottky–Mott rule while interfacing with high work function metals (Au, Pd, and Pt). The quantum chemical insights presented in this paper could aid in the design of high-performance electronic devices with low contact resistance based on newly developed 2D materials.

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36

Vongsilathai, Songkran, Anchaleeporn Waritswat Lothongkum, and Gobboon Lothongkum. "Corrosion behavior of a new 25Cr-3Ni-7Mn-0.66 N duplex stainless steel in artificial seawater." Materials Testing 63, no. 6 (June 1, 2021): 505–11. http://dx.doi.org/10.1515/mt-2020-0086.

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Abstract A new duplex 25Cr-3Ni-7Mn-0.66 N alloy was prepared in a vacuum arc re-melting furnace and characterized by metallographic and EPMA methods. Its corrosion behavior was investigated by potentiodynamic polarization, electrochemical impedance spectroscopy (EIS) and a Mott-Schottky (M-S) analysis in artificial seawater at room temperature and compared with those of super and normal commercial duplex stainless steel (SDSS and DSS). No significant difference in the open circuit potentials and pitting potentials was observed. Its passive film current density lies between those of SDSS and DSS. This was confirmed by EIS analysis. A pit attack was observed on the δ-phase for all duplex samples, because the PREN16 of the δ-phase was lower than that of the γ-phase. From the Mott-Schottky analysis, the passive films were found to be composed of bi-layer structures, a p-type semiconductor inner layer, and a n-type semiconductor outer layer. The degree of defect as well as the effect of nitrogen in passive film layer are discussed with respect to the point defect model.

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37

FLORES, F. "ALKALI-ATOM ADSORPTION ON SEMICONDUCTOR SURFACES: METALLIZATION AND SCHOTTKY-BARRIER FORMATION." Surface Review and Letters 02, no. 04 (August 1995): 513–37. http://dx.doi.org/10.1142/s0218625x95000480.

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Alkali metals deposited on weakly ionic semiconductors are neither reactive nor form large three-dimensional islands, offering an ideal system in which Schottky junctions can be analyzed. In this paper, the alkali-metal-semiconductor interface is reviewed with a special emphasis on the formation of the Schottky barrier. Two regimes are clearly differentiated for the deposition of AMs on a semiconductor: in the high-coverage limit the Schottky barrier is shown to depend, for not very defective interfaces, on the semiconductor charge neutrality level. For low coverages, different one- and two-dimensional structures appear on the semiconductor surface presenting an insulating behavior. For depositions around a metal monolayer, a Mott metal-insulator transition appears; then, the interface Fermi energy is pinned by the metallic density of states at the position determined by the semiconductor charge neutrality level. This situation defines the Schottky barrier height of a thick-metal overlayer.

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38

Zuraev, A. V., Y. V. Grigoriev, C. M. Verbilo, L. S. Ivashkevich, A. S. Lyakhov, and O. A. Ivashkevich. "PalladiumPolymer Nanocomposite: An Efficient Catalyst for Green Suzuki–Miyaura Cross-Coupling and Mott-Schottky Nitrobenzene Reduction Processes." Proceedings of the National Academy of Sciences of Belarus, Chemical Series 55, no. 2 (June 29, 2019): 196–204. http://dx.doi.org/10.29235/1561-8331-2019-55-2-196-204.

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A new catalyst for green Suzuki–Miyaura cross-coupling and Mott-Schottky nitrobenzene reduction processes was prepared by thermolysis of palladium (II) poly-5-vinyltetrazolate. Heterogeneous catalyst includes Pd-nanoparticles supported on polymeric matrix. It presents recoverable and recyclable catalyst and the catalyzed reactions proceed in aqueous media at room temperature in aerobic conditions.

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39

Lu, Changzhi, and S. Noor Mohammad. "Validity/invalidity of Schottky-Mott rules for Schottky contacts to III-V nitride semiconductor heterostructures." Applied Physics Letters 89, no. 16 (October 16, 2006): 162111. http://dx.doi.org/10.1063/1.2358956.

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40

Han, Ji Sheng, Philip Tanner, Sima Dimitrijev, Qu Shuang, Yan Shen, and Xian Gang Xu. "The Impact of the Surface Treatments on the Properties of Gan/3C-SiC/Si Based Schottky Barrier Diodes." Materials Science Forum 740-742 (January 2013): 1111–14. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.1111.

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In this work, we studied the effect of surface preparation and substrate temperature during sputter deposition of Schottky contacts on N-GaN/SiC/Si substrates, looking at parameters such as on-resistance, reverse leakage, and contact barrier height. Ti, Ni and Mo were sputtered to form the contacts, and we characterized the I-V curves with the different substrate temperatures during the sputtering as shown in Figure 1. For the Ti Schottky contact, the substrate temperature of 100oC during the sputtering demonstrates the minimum series resistance with Rs about 0.04cm2, while temperatures greater than 3000C increased reverse bias leakage. The Mott-Schottky plot reveals a barrier height of 1.2V for this contact. Results for sputtered Ni contacts using different substrate temperatures will also be presented, as well as the effect of Ar sputter cleaning before contact deposition.

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41

van de Krol, R., A. Goossens, and J. Schoonman. "Mott‐Schottky Analysis of Nanometer‐Scale Thin‐Film Anatase TiO2." Journal of The Electrochemical Society 144, no. 5 (May 1, 1997): 1723–27. http://dx.doi.org/10.1149/1.1837668.

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42

Kirchartz, Thomas, Wei Gong, Steven A. Hawks, Tiziano Agostinelli, Roderick C. I. MacKenzie, Yang Yang, and Jenny Nelson. "Sensitivity of the Mott–Schottky Analysis in Organic Solar Cells." Journal of Physical Chemistry C 116, no. 14 (March 26, 2012): 7672–80. http://dx.doi.org/10.1021/jp300397f.

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43

Harrington, Scott P., and Thomas M. Devine. "Analysis of Electrodes Displaying Frequency Dispersion in Mott-Schottky Tests." Journal of The Electrochemical Society 155, no. 8 (2008): C381. http://dx.doi.org/10.1149/1.2929819.

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44

Bondarenko, Alexander S., and Genady A. Ragoisha. "Variable Mott-Schottky plots acquisition by potentiodynamic electrochemical impedance spectroscopy." Journal of Solid State Electrochemistry 9, no. 12 (July 12, 2005): 845–49. http://dx.doi.org/10.1007/s10008-005-0025-7.

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45

Labed, Madani, Nouredine Sengouga, and You Seung Rim. "Control of Ni/β-Ga2O3 Vertical Schottky Diode Output Parameters at Forward Bias by Insertion of a Graphene Layer." Nanomaterials 12, no. 5 (March 1, 2022): 827. http://dx.doi.org/10.3390/nano12050827.

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Controlling the Schottky barrier height (ϕB) and other parameters of Schottky barrier diodes (SBD) is critical for many applications. In this work, the effect of inserting a graphene interfacial monolayer between a Ni Schottky metal and a β-Ga2O3 semiconductor was investigated using numerical simulation. We confirmed that the simulation-based on Ni workfunction, interfacial trap concentration, and surface electron affinity was well-matched with the actual device characterization. Insertion of the graphene layer achieved a remarkable decrease in the barrier height (ϕB), from 1.32 to 0.43 eV, and in the series resistance (RS), from 60.3 to 2.90 mΩ.cm2. However, the saturation current (JS) increased from 1.26×10−11 to 8.3×10−7(A/cm2). The effects of a graphene bandgap and workfunction were studied. With an increase in the graphene workfunction and bandgap, the Schottky barrier height and series resistance increased and the saturation current decreased. This behavior was related to the tunneling rate variations in the graphene layer. Therefore, control of Schottky barrier diode output parameters was achieved by monitoring the tunneling rate in the graphene layer (through the control of the bandgap) and by controlling the Schottky barrier height according to the Schottky–Mott role (through the control of the workfunction). Furthermore, a zero-bandgap and low-workfunction graphene layer behaves as an ohmic contact, which is in agreement with published results.

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46

Schipani, F., C. M. Aldao, and M. A. Ponce. "Inadequacy of the Mott–Schottky equation in strongly pinned double Schottky barriers with no deep donors." Journal of Physics D: Applied Physics 45, no. 49 (November 9, 2012): 495302. http://dx.doi.org/10.1088/0022-3727/45/49/495302.

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47

Shabalina, Anastasiia V., Ekaterina Y. Gotovtseva, Yulia A. Belik, Sergey M. Kuzmin, Tamara S. Kharlamova, Sergei A. Kulinich, Valery A. Svetlichnyi, and Olga V. Vodyankina. "Electrochemical Study of Semiconductor Properties for Bismuth Silicate-Based Photocatalysts Obtained via Hydro-/Solvothermal Approach." Materials 15, no. 12 (June 9, 2022): 4099. http://dx.doi.org/10.3390/ma15124099.

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Three bismuth silicate-based photocatalysts (composites of Bi2SiO5 and Bi12SiO20) prepared via the hydro-/solvothermal approach were studied using electrochemical methods. The characteristic parameters of semiconductors, such as flat band potential, donor density, and mobility of their charge carriers, were obtained and compared with the materials’ photocatalytic activity. An attempt was made to study the effect of solution components on the semiconductor/liquid interface (SLI). In particular, the Mott–Schottky characterization was made in a common model electrolyte (Na2SO4) and with the addition of glycerol as a model organic compound for photocatalysis. Thus, a medium close to those in photocatalytic experiments was simulated, at least within the limits allowed by electrochemical measurements. Zeta-potential measurements and electrochemical impedance spectroscopy were used to reveal the processes taking place at the SLI. It was found that the medium in which measurements were carried out dramatically impacted the results. The flat band potential values (Efb) obtained via the Mott–Schottky technique were shown to differ significantly depending on the solution used in the experiment, which is explained by different processes taking place at the SLI. A strong influence of specific adsorption of commonly used sulfate ions and neutral molecules on the measured values of Efb was shown.

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48

León, J., S. Pletincx, H. Terryn, B. Özkaya, E. García-Lecina, and J. M. Vega. "Unravelling the Fe Effect on the Corrosion of Chromium Coatings: Chemical Composition and Semiconducting Properties." Journal of The Electrochemical Society 168, no. 12 (December 1, 2021): 121501. http://dx.doi.org/10.1149/1945-7111/ac3ac0.

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A model trivalent chromium-based electroplating bath doped with different concentrations of Fe was used to obtain different metallic coatings. The impact of the Fe was investigated on both the Cr layer and its native passive film by a detailed characterisation using X-ray Photoelectron Spectroscopy (XPS), Angle Resolved XPS and Auger Electron Spectroscopy. Moreover, the semiconducting properties of their oxide layers were explored by Mott-Schottky and the corrosion performance of the coating by linear polarisation resistance and kinetics of the oxide formation. Results revealed not only a homogeneous Fe distribution in the Cr layer but also the presence of an iron-chromium duplex oxide layer for concentrations ≥ 100 mg l−1 Fe in the bath. The Mott-Schottky analysis showed a p-n junction for such coatings due to the presence of an iron oxide layer on top of a chromium oxide one, which increased the total amount of point defects (charge carrier density) and drastically affected to their corrosion resistance (the polarisation resistance decreased by one order of magnitude and their oxide layer showed slower kinetics and a higher passivation current). In contrast, coatings with a single chromium oxide layer showed a p-type semiconducting behaviour as well as the best corrosion performance.

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49

Lyons, LE, and TL Young. "On the Flat-Band Potential and the Frequency Dispersion of Capacitance and Its Removal in an Normal-Cadmium Telluride in Alkaline Selenide, Polyselenide Photoelectrochemical Cell." Australian Journal of Chemistry 39, no. 2 (1986): 347. http://dx.doi.org/10.1071/ch9860347.

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When seepage of the electrolyte between the semiconductor crystal and its insulation was prevented, the equivalent series capacitance CS of an n-CdTe|Se2-, Sen2-,OH-|Pt cell was almost independent of frequency (<2% increase of CS per decade decrease of frequency) in the range 104-2 Hz. Attributing CS wholly to the space-charge capacitance resulted in a linear Mott- Schottky plot and this yielded a flat-band potential of -2.0�0.1 V v . s.c.e . and a built-in potential of 1.08�0.06 V. This was consistent with the observed current-voltage curves in both dark and light. Two conditions under which frequency dispersion was observed were (a) electrolyte seepage and (b) surface damage. The insulating techniques which allowed seepage were similar to those of other workers. The effects of these imperfections on the Mott- Schottky plot are considered. Attempts to extract useful information from frequency dispersion data showed that it is difficult or impossible to obtain a unambiguous equivalent circuit solely on the basis of goodness-of-fit of calculated to observed impedances. The ambiguity can be removed only when sufficient information beyond impedance-frequency data is available. For electrodes with seepage, a model due to Tomkiewicz led to the correct value of the built-in potential.

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50

Alim, Mohammad A. "An analysis of the Mott‐Schottky behavior in ZnO‐Bi2O3based varistors." Journal of Applied Physics 78, no. 7 (October 1995): 4776–79. http://dx.doi.org/10.1063/1.359824.

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