Relevant bibliographies by topics / MSM photodetector

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
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Academic literature on the topic 'MSM photodetector'

Author: Grafiati
Published: 4 June 2021
Last updated: 7 September 2023

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Journal articles on the topic "MSM photodetector"

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Ramle, Mohamad Rafiudin, Rosfariza Radzali, Alhan Farhanah Abd Rahim, et al. "Study of Porous III-V Surface Structure via Etching Process: Effect of Pore Depth." Key Engineering Materials 946 (May 25, 2023): 87–92. http://dx.doi.org/10.4028/p-v731ho.

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In this project, the surface structure of III-V semiconductor, GaAs, was altered to enhance the optical and electronic properties of the semiconductor. This project involved the designing and fabrication of non-porous and porous GaAs structures using SILVACO TCAD tools. The porous GaAs with different pore depth were designed and simulated to investigate the effect of pore depth on the optical and electrical properties of GaAs semiconductor. The pore depth of porous GaAs structure was varied with 2, 4, 6 and 8 μm. The porous GaAs structures were then tested for the metal-semiconductor-metal (MS
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Tsai, Shang Yu, Ching-Chang Lin, Cheng-Tang Yu, et al. "Screen-Printable Silver Paste Material for Semitransparent and Flexible Metal–Semiconductor–Metal Photodetectors with Liquid-Phase Procedure." Nanomaterials 12, no. 14 (2022): 2428. http://dx.doi.org/10.3390/nano12142428.

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Photodetectors are widely applied in modern industrial fields because they convert light energy into electrical signals. We propose a printable silver (Ag) paste electrode for a highly flexible metal–semiconductor–metal (MSM) broadband visible light photodetector as a wearable and portable device. Single-crystal and surface-textured silicon substrates with thicknesses of 37.21 μm were fabricated using a wet etching process. Surface texturization on flexible Si substrates enhances the light-trapping effect and minimizes reflectance from the incident light, and the average reflectance is reduced
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Zhou, Haitao, Lujia Cong, Jiangang Ma, Bingsheng Li, Haiyang Xu, and Yichun Liu. "Suppression of persistent photoconductivity in high gain Ga2O3 Schottky photodetectors*." Chinese Physics B 30, no. 12 (2021): 126104. http://dx.doi.org/10.1088/1674-1056/ac2d1b.

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The defect-related photoconductivity gain and persistent photoconductivity (PPC) observed in Ga2O3 Schottky photodetectors lead to a contradiction between high responsivity and fast recovery speed. In this work, a metal–semiconductor–metal (MSM) Schottky photodetector, a unidirectional Schottky photodetector, and a photoconductor were constructed on Ga2O3 films. The MSM Schottky devices have high gain (> 13) and high responsivity (> 2.5 A/W) at 230–250 nm, as well as slow recovery speed caused by PPC. Interestingly, applying a positive pulse voltage to the reverse-biased Ga2O3/Au Schottk
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Das, K., S. Mukherjee, S. Manna, S. K. Ray, and A. K. Raychaudhuri. "Single Si nanowire (diameter ≤ 100 nm) based polarization sensitive near-infrared photodetector with ultra-high responsivity." Nanoscale 6, no. 19 (2014): 11232–39. http://dx.doi.org/10.1039/c4nr03170a.

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Single silicon nanowire-based MSM photodetectors show ultra high responsivity (&gt;10<sup>4</sup> A W<sup>−1</sup>) in the near-infra-red region, even at zero bias. The observed photoresponse is sensitive to the polarization of the exciting light, allowing the device to act as a polarization-dependent photodetector.
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Hou, Yaonan, Menno Kappers, Chaoyuan Jin, and Rachel Oliver. "Photocurrent detection of radially polarized optical vortex with hot electrons in Au/GaN." Applied Physics Letters 120, no. 20 (2022): 202101. http://dx.doi.org/10.1063/5.0094454.

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We report a GaN based metal–semiconductor–metal (MSM) infrared photodetector enabled with azimuthally distributed sub-wavelength gratings fabricated on one of the working electrodes. Under illumination, hot electron transfer is introduced by the plasmonic resonance in the infrared waveband formed at the interface of Au/GaN. Without the help of using any external optical polarizers, the device is able to detect radial polarization vortices in the form of photocurrents with a prescribed response spectrum. The detector exhibits a 10%–90% rise and fall time of 0.9 ms under modulated light, much fa
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Thahe, Asad A., Motahher A. Qaeed, Suhail Najm Abdullah, et al. "Fabrication of UV Photodetectors Based on Photoelectrochemically Etched Nanoporous Silicon: Effect of Etchants Ratio." Journal of Nanomaterials 2023 (April 26, 2023): 1–11. http://dx.doi.org/10.1155/2023/6576028.

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Despite several attempts to enhance the electrical and charge carrier transport characteristics of porous silicon (PSi), the requisite conditions for optimally synthesizing n-PSi with appealing optoelectronic properties are yet to be achieved. Therefore, this research explores the effect of the chemical ratio of precursor materials (HF:C2H6O:H2O2) on the surface morphology, crystalline structure, and optical and electric properties of PSi. The PSi was produced by photoelectrochemical etching followed by anodization of the n-type Si under light illumination. The properties of the as-prepared PS
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Porges, M., J. S̆afranková, T. Lalinský, et al. "Asymmetric (Schottky-ohmic) MSM photodetector." Solid-State Electronics 38, no. 2 (1995): 425–27. http://dx.doi.org/10.1016/0038-1101(94)e0082-p.

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Doğan, Ümit, Fahrettin Sarcan, Kamuran Kara Koç, Furkan Kuruoğlu, and Ayşe Erol. "Effects of annealing temperature on a ZnO thin film-based ultraviolet photodetector." Physica Scripta 97, no. 1 (2022): 015803. http://dx.doi.org/10.1088/1402-4896/ac4634.

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Abstract In this paper, the effects of annealing temperature on the performance of a ZnO thin film-based Metal-Semiconductor-Metal (MSM) type ultraviolet (UV) photodetector is reported. ZnO thin films were grown on a glass substrate using the Pulsed Filtered Cathodic Vacuum Arc Deposition (PFCVAD) technique at room temperature and after the deposition process the samples were annealed at 400, 450 and 550 °C in air condition to investigate the annealing effect on the structural, electrical, and optical properties of the photodetector. ZnO thin films which have grains in nanometer range has an i
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Landheer, D., Z. M. Li, S. P. McAlister, and D. A. Aruliah. "Modeling of ultrafast metal–semiconductor–metal photodetectors." Canadian Journal of Physics 69, no. 3-4 (1991): 520–26. http://dx.doi.org/10.1139/p91-085.

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We have simulated the transient response of metal–semiconductor–metal (MSM) photodetectors to an optical impulse, using a two-dimensional (2-D) drift-diffusion model that incorporates deep traps and appropriate boundary conditions. We incorporate the external circuit using a method originally developed to describe photoconductors in transmission lines. Initially a one-dimensional (1-D) simulation is used to verify our model comparing our results to previous 1-D calculations and experimental results for GaAs MSM detectors. Then a full 2-D analysis is used to predict the performance of a novel M
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MacDonald, R. P., N. G. Tarr, B. A. Syrett, S. A. Boothroyd, and J. Chrostowski. "MSM photodetector fabricated on polycrystalline silicon." IEEE Photonics Technology Letters 11, no. 1 (1999): 108–10. http://dx.doi.org/10.1109/68.736410.

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Dissertations / Theses on the topic "MSM photodetector"

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Kache, Sravanthi. "Optimization of charge collection efficiency in MSM photodetector." Diss., Columbia, Mo. : University of Missouri-Columbia, 2005. http://hdl.handle.net/10355/4279.

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Thesis (M.S.)--University of Missouri-Columbia, 2005.<br>The entire dissertation/thesis text is included in the research.pdf file; the official abstract appears in the short.pdf file (which also appears in the research.pdf); a non-technical general description, or public abstract, appears in the public.pdf file. Title from title screen of research.pdf file viewed on (December 12, 2006) Includes bibliographical references.
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Meyer, Jason T., and Mahmoud Fallahi. "Ultra-compact integrated silicon photonics balanced coherent photodetector." SPIE-INT SOC OPTICAL ENGINEERING, 2016. http://hdl.handle.net/10150/621797.

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In this paper, the performance simulations of a novel ultra-compact balanced coherent photodetector for operation at a wavelength of 1.5 mu m are presented and design proposals for future fabrication processes are provided. It consists of a compact 2x2 MMI that is evanescently coupled into a germanium MSM photodetection layer. The simulations demonstrate dark current less than 10 nA, capacitance less than 20 fF, and optical bandwidth in the 10-30 GHz range. We propose utilizing the simplicity of direct wafer bonding to bond the detection layer to the output waveguides to avoid complicated epit
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Huang, Sa. "GaN-Based and High-Speed Metal-Semiconductor-Metal Photodetector: Growth and Device Structures for Integration." Diss., Available online, Georgia Institute of Technology, 2003:, 2003. http://etd.gatech.edu/theses/available/etd-11242003-173234/unrestricted/huang%5Fsa%5F200312%5Fphd.pdf.

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Thesis (Ph. D.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2004.<br>Ferguson, Ian T., Committee Member ; Rhodes, William T., Committee Member ; Wang, Zhonglin, Committee Member ; Brown, April S., Committee Chair ; Jokerst, Nan M., Committee Co-Chair ; Doolittle, W. Alan, Committee Member. Vita. Includes bibliographical references.
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Song, Indal. "Multi-Gbit/s CMOS Transimpedance Amplifier with Integrated Photodetector for Optical Interconnects." Diss., Georgia Institute of Technology, 2004. http://hdl.handle.net/1853/4902.

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Trends toward increased integration and miniaturization of optical system components have created pressure to consolidate widely disparate analog and digital functions onto fewer and fewer chips with a goal of eventually built into a single mixed-signal chip. Yet, because of those performance requirements, the frontend circuit has traditionally used III-V compound semiconductor technologies, but the low-level of integration with other digital ICs limits the sustainability of such end products for short-distance applications. On the other hand, their CMOS counter parts, despite having such adva
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Lima, Juliano Alves de. "Projeto, modelagem e fabricação de guias de onda ópticos integrados baseados em polímeros para aplicações em sensores." Universidade de São Paulo, 2002. http://www.teses.usp.br/teses/disponiveis/18/18133/tde-29052017-135956/.

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Este trabalho visa o projeto, modelagem e fabricação de estruturas multicamadas baseadas em polímeros para aplicações como sensores ópticos integrados. A grande motivação para este trabalho está no fato de que estas estruturas, diferente da geometria Mach-Zehnder, dispensam o uso de litografia pois são completamente planares. Isto permite uma diminuição no custo de fabricação dos dispositivos além de permitir que estruturas mais curtas sejam utilizadas. Em se tratando de óptica integrada, as dimensões reduzidas da estrutura impõem severas penalidades no processo de lançamento de potência óptic
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Hugi, Johannes. "Ultrafast MSM photodetectors on InGaAs/GaAs superlattices /." [S.l.] : [s.n.], 1994. http://library.epfl.ch/theses/?nr=1229.

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Huang, Zhaoran. "Multi gigahertz InGaAs/InP inverted MSM photodetectors for photoreceiver and waveguide applications." Diss., Georgia Institute of Technology, 2003. http://hdl.handle.net/1853/5412.

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Vrazel, Michael Gerald. "Investigation of InGaAs/InP inverted MSM photodetectors for alignment tolerant photoreceiver applications." Thesis, Georgia Institute of Technology, 2000. http://hdl.handle.net/1853/13849.

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Moolji, Akbar. "Performance tradeoffs in scaling InAlAs/InGaAs/InP metal-semiconductor-metal (MSM) photodetectors." Thesis, Massachusetts Institute of Technology, 1995. http://hdl.handle.net/1721.1/36975.

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Karar, Ayman A. "Surface plasmons for enhanced metal-semiconductor-metal photodetectors." Thesis, Edith Cowan University, Research Online, Perth, Western Australia, 2013. https://ro.ecu.edu.au/theses/593.

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Surface Plasmon Polaritons (SPPs) are quantized charge density oscillations that occur when a photon couples to the free electron gas of the metal at the interface between a metal and a dielectric. The extraordinary properties of SPP allow for sub-diffraction limit waveguiding and localized field enhancement. The emerging field of surface plasmonics has applied SPP coupling to a number of new and interesting applications, such as: Surface Enhanced Raman Spectroscopy (SERS), super lenses, nano-scale optical circuits, optical filters and SPP enhanced photodetectors. In the past decade, there hav
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Books on the topic "MSM photodetector"

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Malhi, Duljit Singh. Design optimization of GaAs interdigitated MSM photodetector for opto-electronic receiver. National Library of Canada = Bibliothèque nationale du Canada, 1992.

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Bart, Van Zeghbroeck, Vanderbilt Vern C, and United States. National Aeronautics and Space Administration., eds. Optical design of plant canopy measurement system and fabrication of two-dimensional high-speed metal-semiconductor-metal photodetector arrays: Final report, NASA JRI contract #NCC2-5067. National Aeronautics and Space Administration, 1996.

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United States. National Aeronautics and Space Administration., ed. New concentric electrode metal-semiconductor-metal photodetectors: A final report, NASA grant no. NCC-1-197, August 1, 1994 - October 31, 1996. Dept. of Electrical Engineering, University of Virginia, School of Engineering and Applied Science, 1996.

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Book chapters on the topic "MSM photodetector"

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Horstmann, M., M. Marso, K. Schimpf, H. Hardtdegen, M. Hollfelder, and P. Kordoš. "InP/GalnAs MSM Photodetector for Simple Integration in Hemt Circuits." In Heterostructure Epitaxy and Devices. Springer Netherlands, 1996. http://dx.doi.org/10.1007/978-94-009-0245-9_55.

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Bencherif, H., A. Yousfi, M. Khouani, A. Meddour, and Z. Kourdi. "Boosted Graphene/SiC MSM Photodetector Performance Using Genetic Algorithm Approach and Embedded Plasmonic Nanoparticles." In Artificial Intelligence and Heuristics for Smart Energy Efficiency in Smart Cities. Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-92038-8_76.

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"MetalSemiconductorMetal (MSM) Photodetector." In Complete Guide to Semiconductor Devices. IEEE, 2010. http://dx.doi.org/10.1109/9780470547205.ch60.

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Conference papers on the topic "MSM photodetector"

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Hong, W. P., and G. K. Chang. "Long-wavelength InGaAs MSM-HEMT receiver OEICs." In OSA Annual Meeting. Optica Publishing Group, 1992. http://dx.doi.org/10.1364/oam.1992.fff2.

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Our recent progress in researching receiver OEICs based on InGaAs metal-semiconductor-metal (MSM) photodetectors and high-electron-mobility-transistor (HEMT) amplifiers is reviewed. We have built three different receiver OEICs for different system applications. The basic fabrication process was OMCVD growth on a patterned substrate by which the epitaxial layer structures of a MSM photodetector and HEMT are grown sequentially on prepatterned InP substrates in one growth run. Both MSM photodetector and HEMT are based on InAlAs/InGaAs heterostructures in which InGaAs is a light absorption layer o
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Chou, S. Y., Y. Liu, Y. Wang, and P. B. Fischer. "Picosecond Metal-Semiconductor-Metal Photodetectors with Sub-100-nm Finger-Width and Finger-Spacing in GaAs." In Picosecond Electronics and Optoelectronics. Optica Publishing Group, 1991. http://dx.doi.org/10.1364/peo.1991.we7.

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Metal-semiconductor-metal (MSM) photodetectors are very attractive for optical fiber communication systems and future high-speed chip-to-chip connections. MSM photodetectors not only have high-speed, but also their fabrication technology is compatible with the technology of large scale FET integrated circuits. Generally, the recombination time of carriers in a semiconductor is a key factor that limits the speed of a MSM photodetector. However, as the finger-spacing of a MSM detector is reduced into submicron range, the transit time of photon-generated carriers between two interdigitated metal
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Soole, J. B. D. "Design and performance of InGaAs metal-semiconductor-metal photodetectors." In OSA Annual Meeting. Optica Publishing Group, 1990. http://dx.doi.org/10.1364/oam.1990.thvv1.

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Metal-semiconductor-metal (MSM) photodetectors based on the InGaAs/InP material system are an emerging technology for use in the long wavelength 1.3 µm and 1.55 µm fiber bands. In this talk I give results for InGaAs MSM detectors recently fabricated at Bellcore and discuss the performance characteristics and issues for this type of photodetector.
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Karulkar, V. T., S. C. Purandare, Atul K. Srivastava, and B. M. Arora. "High-gain GaAs MSM photodetector." In Emerging OE Technologies, Bangalore, India, edited by Krishna Shenai, Ananth Selvarajan, C. K. N. Patel, C. N. R. Rao, B. S. Sonde, and Vijai K. Tripathi. SPIE, 1992. http://dx.doi.org/10.1117/12.636986.

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VON KAMIENSKI, E. STEIN, H. G. ROSKOS, S. V. AVERIN, et al. "A Subpicosecond Heterobarrier MSM-Photodetector." In 1992 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1992. http://dx.doi.org/10.7567/ssdm.1992.pc1-3.

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Muller, A., G. Konstantinidis, M. Dragoman, et al. "Ultraviolet MSM photodetector based on GaN micromachining." In 2008 International Semiconductor Conference. IEEE, 2008. http://dx.doi.org/10.1109/smicnd.2008.4703336.

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Kanukuntla, Pallav, Dennis Yi, Dennis Hinton, and Demetris Geddis. "Multispectral dual MSM photodetector for avionic communication systems." In 2016 IEEE Avionics and Vehicle Fiber-Optics and Photonics Conference (AVFOP). IEEE, 2016. http://dx.doi.org/10.1109/avfop.2016.7789933.

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Camacho-González, G. F., J. J. Sánchez-Mondragón, P. Rodríguez-Montero, J. Sumaya-Matrínez, and D. H. Peñalver-Vidal. "Architectural improvements of a novel embedded MSM photodetector." In Frontiers in Optics. OSA, 2015. http://dx.doi.org/10.1364/fio.2015.jw2a.68.

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Kummetz, T., A. Fricke, D. Sowada, J. Mähnß, and W. Kowalsky. "AlGaInAs metal-semiconductor-metal photodetectors and modulators for GBit/s systems." In The European Conference on Lasers and Electro-Optics. Optica Publishing Group, 1994. http://dx.doi.org/10.1364/cleo_europe.1994.ctun2.

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Planar metal-semiconductor-metal (MSM) structures prepared on GaAs have attained outstanding frequency limits as high speed photodetector and light modulator due to the low capacitance of the planar electrode design. The operation wavelength of 1.3 µm and 1.55 µm for applications in optical communication systems are obtained by solid source MBE growth of the quaternary material system AlGaInAs under lattice-matching conditions on InP. To achieve high-quality Schottky contacts with low dark currents and high breakdown voltages, an AlInAs barrier enhancement layer has to be inserted between the
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Cheolung Cha, Yunsik Lee, Sang-woo Seo, N. M. Jokerst, and M. A. Brooke. "Ultra Thin-Film MSM Photodetector with Low Parasitic Capacitance." In 2006 5th IEEE Conference on Sensors. IEEE, 2006. http://dx.doi.org/10.1109/icsens.2007.355747.

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Reports on the topic "MSM photodetector"

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Semendy, Fred, Greg Meissner, and Priyalal Wijewarnasuriya. Sulfur Implanted Black Silicon for Metal Semiconductor Metal (MSM) Photodetectors. Defense Technical Information Center, 2012. http://dx.doi.org/10.21236/ada571896.

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